CN103367123A - Method for improving heat stability of rare bismuth semiconductor material - Google Patents
Method for improving heat stability of rare bismuth semiconductor material Download PDFInfo
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- CN103367123A CN103367123A CN2013102644865A CN201310264486A CN103367123A CN 103367123 A CN103367123 A CN 103367123A CN 2013102644865 A CN2013102644865 A CN 2013102644865A CN 201310264486 A CN201310264486 A CN 201310264486A CN 103367123 A CN103367123 A CN 103367123A
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Abstract
The invention relates to a method for improving heat stability of a rare bismuth semiconductor material. The method comprises the step of adding an atom with a minor radius and high bond energy to a process of growing the rare bismuth semiconductor material, wherein the atom with the minor radius and the high bond energy is nitrogen or boron. According to the method provided by the invention, the atom with the minor radius and the high bond energy, such as the nitrogen or the boron, is added while the rare bismuth semiconductor material is grown; the bonding strength of a bismuth atom in the rare bismuth semiconductor material is enhanced by utilizing such atom, and therefore, the heat stability of the rare bismuth semiconductor material at high temperature can be improved. The method for improving heat stability of the rare bismuth semiconductor material provided by the invention can be realized by using a conventional method for improving heat stability of a rare bismuth semiconductor material method, is simple in operation process and is easy to control.
Description
Technical field
The invention belongs to the preparation field of rare bismuth semi-conducting material, particularly a kind of method that improves rare bismuth semi-conducting material thermal stability.
Background technology
In recent years, rare bismuth semi-conducting material has caused in the world more and more concern because having the important characteristic of a lot of uniquenesses.It is found that after in III-V family material, adding bismuth and can produce the band-gap narrowing that is similar to rare nitrogen material.Simultaneously, much smaller than GaAs or InGaAsP material, for the GaAsBi material in the bismuth component 0.019-0.05 scope, the band gap temperature coefficient is about 0.1-0.4meV/K to the band gap that people also find the GaAsBi material, is lower than the 0.56meV/K of GaAs to the temperature dependency degree.Because bismuth element has very large atomic mass, estimate that bismuthide has very large spin-orbit splitting energy, can suppress auger recombination, improve the characteristic temperature of laser.Therefore, rare bismuth material can weaken or eliminate auger recombination, improves working temperature and the characteristic temperature of semiconductor photoelectric device.Bismuth element is mainly to valence band generation effect, and is very little to the conduction band effect, and hole mobility just reduces slightly along with the rising of bi concns.And play surfactant in the growth of bismuth element III-V family material under common growth temperature, be conducive to form smooth interface, the optical characteristics of reinforcing material.
Yet the problem that rare bismuth semi-conducting material exists is that the bond energy of bismuth atom and other atom constitutional chemistry keys is smaller, causes rare bismuth semi-conducting material thermal stability at high temperature relatively poor because the bismuth element atomic radius is larger.This has become the extensive practical significant challenge that faces of rare bismuth semiconductor materials and devices.
Rare bismuth semi-conducting material is the brand-new research direction of just rising in recent years, the thermal stability of rare bismuth semi-conducting material just is found recently especially and is familiar with, still do not improve at present the reliable method of rare bismuth semi-conducting material thermal stability, in the urgent need to innovating, improve the thermal stability of rare bismuth semi-conducting material.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that improves rare bismuth semi-conducting material thermal stability, the method based semiconductor material atomic bonding knowledge, method to rare bismuth semi-conducting material of growing is improved a little, plays the effect that improves rare bismuth semi-conducting material thermal stability
A kind of method that improves rare bismuth semi-conducting material thermal stability of the present invention comprises:
The atom that in the process of the rare bismuth semi-conducting material of growth, adds minor radius and large bond energy; The atom of described minor radius and large bond energy is nitrogen (N), boron (B) etc.
Described rare bismuth semi-conducting material is the GaAsBi material take GaAs substrate, and its preparation method comprises:
(1) the GaAs substrate being carried out deoxidation resolves;
(2) at GaAs Grown GaAs resilient coating;
(3) growth contains the GaAsBi material of N, gets final product.
Described rare bismuth semi-conducting material is the InAsBi material take InAs substrate, and its preparation method comprises:
(1) the InAs substrate being carried out deoxidation resolves;
(2) at InAs Grown InAs resilient coating;
(3) growth contains the InAsBi material of N, gets final product.
The present invention is by adding simultaneously the atom of minor radius and large bond energy in the rare bismuth semi-conducting material of growth, described minor radius and large bond energy atom can strengthen the one-tenth bond strength of bismuth atom in rare bismuth semi-conducting material, to improve the thermal stability of rare bismuth semi-conducting material.
Beneficial effect:
(1) method provided by the invention adds the atom of the minor radius such as nitrogen, boron and large bond energy in rare bismuth semi-conducting material simultaneously in growth, utilize this type of atom to strengthen the one-tenth bond strength of bismuth atom in rare bismuth semi-conducting material, can improve rare bismuth semi-conducting material thermal stability at high temperature;
(2) the present invention can realize with conventional molecular beam epitaxial method, and operating procedure is simple, and is easy to control.
Description of drawings
Fig. 1 is that adding minor radius and large bond energy atom improve rare bismuth semi-conducting material to improve the schematic diagram of its thermal stability;
Fig. 2 adds the structural representation that the N atom improves the GaAsBi material among the embodiment 1;
Fig. 3 adds the structural representation that the N atom improves the InAsBi material among the embodiment 2
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
Below take GaAs Grown GaAsBi material as example, explanation improves method and the step of rare bismuth semi-conducting material thermal stability by the atom that adds minor radius, large bond energy in the Material growth process, and these methods and step can directly be generalized to rare bismuth semi-conducting material of other types.Concrete grammar and step are as follows:
(1) under the high temperature GaAs substrate being carried out deoxidation resolves;
(2) the 100nm GaAs resilient coating of on the GaAs substrate, growing first;
(3) open simultaneously Ga, As, Bi and N electron gun stove shutter, growth 500nm contains the GaAsBi material of N;
(4) close all electron gun stove shutters, the growth of this rare bismuth semi-conducting material is finished in the substrate cooling, and it will have better thermal stability.
Embodiment 2
Below take InAs Grown InAsBi material as example, explanation improves method and the step of rare bismuth semi-conducting material thermal stability by the atom that adds minor radius, large bond energy in the Material growth process, and these methods and step can directly be generalized to rare bismuth semi-conducting material of other types.Concrete grammar and step are as follows:
(1) under the high temperature InAs substrate being carried out deoxidation resolves;
(2) the 100nm InAs resilient coating of on the InAs substrate, growing first;
(3) open simultaneously In, As, Bi and N electron gun stove shutter, growth 500nm contains the InAsBi material of N;
(4) close all electron gun stove shutters, the growth of this rare bismuth semi-conducting material is finished in the substrate cooling, and it will have better thermal stability.
Claims (3)
1. method that improves rare bismuth semi-conducting material thermal stability comprises:
The atom that in the process of the rare bismuth semi-conducting material of growth, adds minor radius and large bond energy; The atom of described minor radius and large bond energy is nitrogen or boron.
2. a kind of method that improves rare bismuth semi-conducting material thermal stability according to claim 1 is characterized in that, described rare bismuth semi-conducting material is the GaAsBi material take GaAs substrate, and its preparation method comprises:
(1) the GaAs substrate being carried out deoxidation resolves;
(2) at GaAs Grown GaAs resilient coating;
(3) growth contains the GaAsBi material of N, gets final product.
3. a kind of method that improves rare bismuth semi-conducting material thermal stability according to claim 1 is characterized in that, described rare bismuth semi-conducting material is the InAsBi material take InAs substrate, and its preparation method comprises:
(1) the InAs substrate being carried out deoxidation resolves;
(2) at InAs Grown InAs resilient coating;
(3) growth contains the InAsBi material of N, gets final product.
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| CN103367123B CN103367123B (en) | 2016-04-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920861A (en) * | 2019-03-15 | 2019-06-21 | 诺迪克(余姚)光电产业研究院有限公司 | Indium arsenic nitrogen bismuth semiconductor material, laser and detector and preparation method using the material |
| CN110896120A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | Multilayer InGaAs detector material structure and preparation method |
Citations (3)
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| CN1672935A (en) * | 2004-02-23 | 2005-09-28 | 索尼株式会社 | Liquid ejection head, liquid ejection apparatus, and manufacturing method of the liquid ejection head |
| JP2005340515A (en) * | 2004-05-27 | 2005-12-08 | Alps Electric Co Ltd | Spray coating apparatus and spray coating method using the same |
| CN101123835A (en) * | 2006-08-11 | 2008-02-13 | 精工爱普生株式会社 | Liquid ejection method, wiring substrate, color filter and manufacturing method for organic el light-emitting element |
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Patent Citations (3)
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| CN1672935A (en) * | 2004-02-23 | 2005-09-28 | 索尼株式会社 | Liquid ejection head, liquid ejection apparatus, and manufacturing method of the liquid ejection head |
| JP2005340515A (en) * | 2004-05-27 | 2005-12-08 | Alps Electric Co Ltd | Spray coating apparatus and spray coating method using the same |
| CN101123835A (en) * | 2006-08-11 | 2008-02-13 | 精工爱普生株式会社 | Liquid ejection method, wiring substrate, color filter and manufacturing method for organic el light-emitting element |
Non-Patent Citations (1)
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| WEI HUANG: "GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 μm Photoluminescence Emission", 《JAPANESE JOURNAL OF APPLIED PHYSICS》, 29 April 2004 (2004-04-29) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109920861A (en) * | 2019-03-15 | 2019-06-21 | 诺迪克(余姚)光电产业研究院有限公司 | Indium arsenic nitrogen bismuth semiconductor material, laser and detector and preparation method using the material |
| CN110896120A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | Multilayer InGaAs detector material structure and preparation method |
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