CN103365329B - Generation circuit of zero-temperature-coefficient currents - Google Patents
Generation circuit of zero-temperature-coefficient currents Download PDFInfo
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- CN103365329B CN103365329B CN201210098008.7A CN201210098008A CN103365329B CN 103365329 B CN103365329 B CN 103365329B CN 201210098008 A CN201210098008 A CN 201210098008A CN 103365329 B CN103365329 B CN 103365329B
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Abstract
The invention provides a generation circuit of zero-temperature-coefficient currents. The generation circuit of the zero-temperature coefficient currents comprises a current output circuit. One end of the current output circuit is connected with an external circuit. One end of the external circuit is connected with a high level, and the other end of the external circuit is connected with one end of a parallel circuit. The other end of the parallel circuit is connected with the ground. The parallel circuit comprises a first branch circuit and a second branch circuit. The first branch circuit is used for generating currents of which the temperature coefficient is negative when the temperature is raised, and the second branch circuit is used for generating currents of which the temperature coefficient is positive when the temperature is raised, wherein after weighing is performed on the currents generated by the first branch circuit and the second branch circuit, the total current temperature coefficient is zero.
Description
Technical field
The present invention relates to electronic circuit field, particularly relate to the not temperature variant circuit of one and produce circuit.
Background technology
Not temperature variant circuit is also called the electric current of zero-temperature coefficient.In traditional mimic channel, the electric current generating this zero-temperature coefficient adopts bandgap to produce usually.
Summary of the invention
The invention provides the not temperature variant current generating circuit of one, the technical matters that solve how to produce not temperature variant current source.
For solving the problems of the technologies described above, the invention provides following technical scheme:
A kind of generation circuit of zero-temperature coefficient electrical current, comprise a current output circuit, one end of described current output circuit is connected with external circuit, one end is connected with high level, the other end is connected with one end of a parallel circuit, the other end ground connection of wherein said parallel circuit, described parallel circuit comprises the first branch road and the second branch road, wherein:
It is negative electric current that described first branch road is used for producing temperature coefficient when temperature raises;
It is positive electric current that described second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current after the electric current weighting that produces of described first branch road and described second branch road is zero.
Preferably, described circuit also has following features:
Described current output circuit is metal-oxide-semiconductor.
Preferably, described circuit also has following features:
Described first branch road and described second branch road include metal-oxide-semiconductor, each metal-oxide-semiconductor included by wherein said first branch road is all operated in saturation region, each metal-oxide-semiconductor included by described second branch road is all operated in sub-threshold region, and on same branch road, the dimension scale of metal-oxide-semiconductor is identical.
Preferably, described circuit also has following features:
Described first branch road comprises a metal-oxide-semiconductor, and described second branch road comprises three metal-oxide-semiconductors.
Preferably, described circuit also has following features:
The size of the total current that described first branch road and described second branch road produce for zero-temperature coefficient be that dimension scale by adjusting the metal-oxide-semiconductor included by the first branch road and/or the second branch road obtains.
Preferably, described circuit also has following features:
If described first branch road comprises a metal-oxide-semiconductor, described second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each metal-oxide-semiconductor included by described second branch road is 90 ~ 110 times of the dimension scale of each metal-oxide-semiconductor included by described first branch road, the temperature coefficient of the total current after the electric current weighting that described first branch road and described second branch road produce is zero.
Compared with prior art, embodiment provided by the invention, adopt parallel circuit structure, article one, branch road produces the positive temperature coefficient (PTC) raised with temperature, another branch road produces negative temperature coefficient, the total current finally making parallel circuit produce will not vary with temperature, and reach the object producing not temperature variant current source when not adopting bandgap, realize simple.
Accompanying drawing explanation
Fig. 1 is the structural representation of the generation circuit of zero-temperature coefficient electrical current provided by the invention;
Another structural representation that Fig. 2 is circuit shown in Fig. 1;
Fig. 3 for circuit shown in Fig. 1-40 degree to the current curve diagram in the temperature range of 125 degree.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, the present invention is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combination in any mutually.
The invention provides a kind of generation circuit of zero-temperature coefficient electrical current, comprise a current output circuit, one end of described current output circuit is connected with external circuit, one end is connected with high level, the other end is connected with one end of a parallel circuit, the other end ground connection of wherein said parallel circuit, described parallel circuit comprises the first branch road and the second branch road, wherein:
It is negative electric current that described first branch road is used for producing temperature coefficient when temperature raises;
It is positive electric current that described second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current after the electric current weighting that produces of described first branch road and described second branch road is zero.
Suppose when temperature is T, the electric current that the first branch road exports is I1, and the electric current that the second branch road exports is I2, then the total current of parallel circuit is I1+I2; When temperature raises as T+t, wherein t > 0, the electric current that the first branch road exports will become (1-a) I1, relative, and the electric current that the second branch road exports will become (1+b) I2, and wherein a and b is all greater than zero; By adjusting the structure of components and parts in described first branch road or the second branch road, a*I1=b*I2, thus the total current that parallel circuit is exported is still I1+I2.
Preferably, described current output circuit is metal-oxide-semiconductor.
Specifically, this current output circuit is a PMOS, and wherein the source electrode of this PMOS connects high level, and grid is connected with external circuit, drains to be connected with described parallel circuit.
Preferably, described first branch road and described second branch road include metal-oxide-semiconductor, each metal-oxide-semiconductor included by wherein said first branch road is all operated in saturation region, each metal-oxide-semiconductor included by described second branch road is all operated in sub-threshold region, and the dimension scale of metal-oxide-semiconductor is identical on same branch road, wherein said dimension scale is the width of metal-oxide-semiconductor and the ratio of this metal-oxide-semiconductor length.
That is, the voltage at described parallel circuit two ends can make the first branch road to make each metal-oxide-semiconductor be operated in the voltage of saturation region, and each metal-oxide-semiconductor on the second branch road can be made again to be operated in subthreshold value pressure.
In actual applications, those skilled in the art according to above-mentioned feature, can be configured the metal-oxide-semiconductor number on two branch roads.
Preferably, described first branch road comprises a metal-oxide-semiconductor, and described second branch road comprises three metal-oxide-semiconductors.
Because pipe work is different in sub-threshold region and the temperature coefficient size that is operated in saturation region, being negative temperature coefficient in saturation region, is positive temperature coefficient (PTC) in cut-off region.So electric current weighting that is that will obtain zero-temperature coefficient and that just need both sides.In order to not change grid source bias voltage, can by adjust the size of pipe and adjust size of current thus equal proportion change current branch total temperature coefficient, thus the summation of electric current when two branch roads are varied with temperature is constant.
The negative temperature coefficient that the metal-oxide-semiconductor first branch road being operated in saturation region produces is a times of the positive temperature coefficient (PTC) that the metal-oxide-semiconductor that the second branch road is operated in cut-off region produces, the dimension scale adjusting each metal-oxide-semiconductor on the second branch road is original a times, at this moment the second branch current size is original a times, so the temperature coefficient of the total current of parallel circuit is also original a times, be added with left current, the temperature coefficient of total current is exactly 0.
A metal-oxide-semiconductor is comprised at described first branch road, when described second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each metal-oxide-semiconductor included by described second branch road is 90 ~ 110 times of the dimension scale of each metal-oxide-semiconductor included by described first branch road, the temperature coefficient of the total current that described parallel-current exports is close to 0.
Fig. 1 is the structural representation of the generation circuit of zero-temperature coefficient electrical current provided by the invention.In circuit shown in Fig. 1, the difference according to temperature coefficient can be divided into two regions, positive temperature coefficient region and negative temperature coefficient region NMOS tube.When N pipe is close to cut-off region, drain-source current increases with the rising of temperature; When N pipe is operated in saturation region, drain-source current reduces with the rising of temperature.Be stranded this, adopt the structure of upper figure, the MN4 pipe on the left side is in saturation region, and the MN1 on the right, MN2 and MN3 pipe is all operated in sub-threshold region.The dimension scale of adjustment both sides pipe, finally can make total current, the electric current namely flowing through MP2 is zero-temperature coefficient.
Another structural representation that Fig. 2 is circuit shown in Fig. 1.The zero-temperature coefficient electrical current this obtained by a PMOS in circuit shown in Fig. 2 exports to external circuit.
Fig. 3 for circuit shown in Fig. 1-40 degree to the current curve diagram in the temperature range of 125 degree.To on example carry out experiment and draw, at-40 degree in the temperature range of 125 degree, the circuit that parallel circuit exports is a more level and smooth temperature curve, namely exporting total current varies with temperature very little, curent change is within 2uA, and the size of this curent change can be ignored usually, therefore can think that the electric current residing for parallel circuit is the electric current of zero-temperature coefficient.
Can draw from above, adopt parallel circuit structure, article one, branch road produces the positive temperature coefficient (PTC) raised with temperature, another branch road produces negative temperature coefficient, finally make total current that parallel circuit produces by not temperature variant current source, reach the object producing not temperature variant current source when not adopting bandgap, realize simple.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain described in claim.
Claims (6)
1. the generation circuit of a zero-temperature coefficient electrical current, it is characterized in that, comprise a current output circuit, one end of described current output circuit is connected with external circuit, one end is connected with high level, and the other end is connected with one end of a parallel circuit, the other end ground connection of wherein said parallel circuit, described parallel circuit comprises the first branch road and the second branch road, wherein:
It is negative electric current that described first branch road is used for producing temperature coefficient when temperature raises;
It is positive electric current that described second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current after the electric current weighting that produces of described first branch road and described second branch road is zero;
Wherein, described first branch road and described second branch road include metal-oxide-semiconductor;
Adjust size of current by the size adjusting described metal-oxide-semiconductor and change current branch total temperature coefficient with equal proportion.
2. circuit according to claim 1, is characterized in that:
Described current output circuit is metal-oxide-semiconductor.
3. circuit according to claim 1, is characterized in that:
Each metal-oxide-semiconductor included by wherein said first branch road is all operated in saturation region, and each metal-oxide-semiconductor included by described second branch road is all operated in sub-threshold region, and on same branch road, the dimension scale of metal-oxide-semiconductor is identical.
4. circuit according to claim 3, is characterized in that:
Described first branch road comprises a metal-oxide-semiconductor, and described second branch road comprises three metal-oxide-semiconductors.
5. the circuit according to claim 3 or 4, is characterized in that:
The temperature coefficient of the total current after the electric current weighting that described first branch road and described second branch road produce is zero, is that the dimension scale by adjusting the metal-oxide-semiconductor included by the first branch road and/or the second branch road obtains.
6. circuit according to claim 5, is characterized in that:
If described first branch road comprises a metal-oxide-semiconductor, described second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each metal-oxide-semiconductor included by described second branch road is 90 ~ 110 times of the dimension scale of each metal-oxide-semiconductor included by described first branch road, the temperature coefficient of the total current after the electric current weighting that described first branch road and described second branch road produce is zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210098008.7A CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210098008.7A CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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| Publication Number | Publication Date |
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| CN103365329A CN103365329A (en) | 2013-10-23 |
| CN103365329B true CN103365329B (en) | 2015-06-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210098008.7A Active CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103955252B (en) * | 2014-04-14 | 2015-09-09 | 中国科学院微电子研究所 | The reference current generating circuit of three-dimensional storage and the method for generation reference current thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504983A1 (en) * | 1991-03-20 | 1992-09-23 | Koninklijke Philips Electronics N.V. | Reference circuit for supplying a reference current with a predetermined temperature coefficient |
| KR20050093516A (en) * | 2004-03-19 | 2005-09-23 | 엘지전자 주식회사 | Current reference circuit |
| TW200923611A (en) * | 2007-11-23 | 2009-06-01 | Cmsc Inc | Reference circuit capable of adjusting temperature coefficient |
| CN202075652U (en) * | 2011-03-29 | 2011-12-14 | 西安华芯半导体有限公司 | High-precision current reference source with pure MOS structure |
| CN102346497A (en) * | 2011-05-27 | 2012-02-08 | 上海宏力半导体制造有限公司 | Reference current generating circuit |
-
2012
- 2012-04-05 CN CN201210098008.7A patent/CN103365329B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504983A1 (en) * | 1991-03-20 | 1992-09-23 | Koninklijke Philips Electronics N.V. | Reference circuit for supplying a reference current with a predetermined temperature coefficient |
| KR20050093516A (en) * | 2004-03-19 | 2005-09-23 | 엘지전자 주식회사 | Current reference circuit |
| TW200923611A (en) * | 2007-11-23 | 2009-06-01 | Cmsc Inc | Reference circuit capable of adjusting temperature coefficient |
| CN202075652U (en) * | 2011-03-29 | 2011-12-14 | 西安华芯半导体有限公司 | High-precision current reference source with pure MOS structure |
| CN102346497A (en) * | 2011-05-27 | 2012-02-08 | 上海宏力半导体制造有限公司 | Reference current generating circuit |
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| CN103365329A (en) | 2013-10-23 |
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