CN103365329A - Generation circuit of zero-temperature-coefficient currents - Google Patents
Generation circuit of zero-temperature-coefficient currents Download PDFInfo
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- CN103365329A CN103365329A CN2012100980087A CN201210098008A CN103365329A CN 103365329 A CN103365329 A CN 103365329A CN 2012100980087 A CN2012100980087 A CN 2012100980087A CN 201210098008 A CN201210098008 A CN 201210098008A CN 103365329 A CN103365329 A CN 103365329A
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Abstract
The invention provides a generation circuit of zero-temperature-coefficient currents. The generation circuit of the zero-temperature coefficient currents comprises a current output circuit. One end of the current output circuit is connected with an external circuit. One end of the external circuit is connected with a high level, and the other end of the external circuit is connected with one end of a parallel circuit. The other end of the parallel circuit is connected with the ground. The parallel circuit comprises a first branch circuit and a second branch circuit. The first branch circuit is used for generating currents of which the temperature coefficient is negative when the temperature is raised, and the second branch circuit is used for generating currents of which the temperature coefficient is positive when the temperature is raised, wherein after weighing is performed on the currents generated by the first branch circuit and the second branch circuit, the total current temperature coefficient is zero.
Description
Technical field
The present invention relates to electronic circuit field, relate in particular to a kind of not temperature variant circuit and produce circuit.
Background technology
Not temperature variant circuit is called again the electric current of zero-temperature coefficient.In traditional mimic channel, the electric current that generates this zero-temperature coefficient adopts bandgap to produce usually.
Summary of the invention
The invention provides a kind of not temperature variant current generating circuit, the technical matters that solve is how to produce not temperature variant current source in the situation that does not adopt bandgap.
For solving the problems of the technologies described above, the invention provides following technical scheme:
A kind of generation circuit of zero-temperature coefficient electrical current, comprise a current output circuit, one end of described current output circuit links to each other with external circuit, one end links to each other with high level, the other end links to each other with an end of a circuit in parallel, the other end ground connection of wherein said parallel circuit, described parallel circuit comprise the first branch road and the second branch road, wherein:
Described the first branch road is used for producing temperature coefficient and is negative electric current when temperature raises;
It is positive electric current that described the second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current behind the electric current weighting that produces of described the first branch road and described the second branch road is zero.
Preferably, described circuit also has following features:
Described current output circuit is metal-oxide-semiconductor.
Preferably, described circuit also has following features:
Described the first branch road and described the second branch road include metal-oxide-semiconductor, each included metal-oxide-semiconductor of wherein said the first branch road all is operated in the saturation region, each included metal-oxide-semiconductor of described the second branch road all is operated in sub-threshold region, and the dimension scale of metal-oxide-semiconductor is identical on the same branch road.
Preferably, described circuit also has following features:
Described the first branch road comprises a metal-oxide-semiconductor, and described the second branch road comprises three metal-oxide-semiconductors.
Preferably, described circuit also has following features:
The size of the total current that described the first branch road and described the second branch road produce is that zero-temperature coefficient is to obtain by the dimension scale of adjusting the included metal-oxide-semiconductor of the first branch road and/or the second branch road.
Preferably, described circuit also has following features:
If described the first branch road comprises a metal-oxide-semiconductor, described the second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each included metal-oxide-semiconductor of described the second branch road was 90～110 times of dimension scale of each included metal-oxide-semiconductor of described the first branch road, the temperature coefficient of the total current behind the electric current weighting that described the first branch road and described the second branch road produce was zero.
Compared with prior art, embodiment provided by the invention, adopt the parallel circuit structure, article one, branch road produces the positive temperature coefficient (PTC) that raises with temperature, another branch road produces negative temperature coefficient, final so that the total current that parallel circuit produces will not vary with temperature, and reach to produce the not purpose of temperature variant current source in the situation that does not adopt bandgap, realize simple.
Description of drawings
Fig. 1 is the structural representation of the generation circuit of zero-temperature coefficient electrical current provided by the invention;
Fig. 2 is another structural representation of circuit shown in Figure 1;
Fig. 3 is circuit shown in Figure 1 at the current curve diagram of-40 degree in the temperature ranges of 125 degree.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.Need to prove that in the situation of not conflicting, the embodiment among the application and the feature among the embodiment be combination in any mutually.
The invention provides a kind of generation circuit of zero-temperature coefficient electrical current, comprise a current output circuit, one end of described current output circuit links to each other with external circuit, one end links to each other with high level, the other end links to each other with an end of a circuit in parallel, the other end ground connection of wherein said parallel circuit, described parallel circuit comprise the first branch road and the second branch road, wherein:
Described the first branch road is used for producing temperature coefficient and is negative electric current when temperature raises;
It is positive electric current that described the second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current behind the electric current weighting that produces of described the first branch road and described the second branch road is zero.
Suppose that in temperature be in the situation of T, the electric current of the first branch road output is I1, and the electric current of the second branch road output is I2, and then the total current of parallel circuit is I1+I2; Be T+t when temperature raises, wherein the electric current of t＞0, the first branch road output will become (1-a) I1, and will be relative, and the electric current of the second branch road output will become (1+b) I2, and wherein a and b are all greater than zero; By adjusting the structure of components and parts in described the first branch road or the second branch road, a*I1=b*I2, thus so that the total current of parallel circuit output still is I1+I2.
Preferably, described current output circuit is metal-oxide-semiconductor.
Specifically, this current output circuit is PMOS pipe, and wherein the source electrode of this PMOS pipe connects high level, and grid links to each other with external circuit, and drain electrode links to each other with described parallel circuit.
Preferably, described the first branch road and described the second branch road include metal-oxide-semiconductor, each included metal-oxide-semiconductor of wherein said the first branch road all is operated in the saturation region, each included metal-oxide-semiconductor of described the second branch road all is operated in sub-threshold region, and the dimension scale of metal-oxide-semiconductor is identical on the same branch road, and wherein said dimension scale is the width of metal-oxide-semiconductor and the ratio of this metal-oxide-semiconductor length.
That is, the voltage at described parallel circuit two ends can make the voltage that can make each metal-oxide-semiconductor be operated in the saturation region on the first branch road, can make again on the second branch road each metal-oxide-semiconductor be operated in subthreshold value and press.
In actual applications, those skilled in the art can according to above-mentioned feature, be configured the metal-oxide-semiconductor number on two branch roads.
Preferably, described the first branch road comprises a metal-oxide-semiconductor, and described the second branch road comprises three metal-oxide-semiconductors.
Because pipe work is different in sub-threshold region with the temperature coefficient size that is operated in the saturation region, is negative temperature coefficient in the saturation region, is positive temperature coefficient (PTC) at cut-off region.So obtain zero-temperature coefficient and just need to be to the electric current weighting on both sides.In order not change grid source bias voltage, change the current branch total temperature coefficient thereby can adjust size of current equal proportion ground by the size of adjusting pipe, thereby so that the summation of the electric current of two branch roads when varying with temperature is constant.
Be operated in negative temperature coefficient that the metal-oxide-semiconductor of saturation region produces on the first branch road and be a of the positive temperature coefficient (PTC) that the metal-oxide-semiconductor that is operated in cut-off region on the second branch road produces doubly, the dimension scale of adjusting each metal-oxide-semiconductor on the second branch road is original a times, at this moment the second branch current size is original a times, the temperature coefficient of the total current of parallel circuit also is original a times so, with left side current summation, the temperature coefficient of total current is exactly 0.
Comprise a metal-oxide-semiconductor at described the first branch road, when described the second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each included metal-oxide-semiconductor of described the second branch road was 90～110 times of dimension scale of each included metal-oxide-semiconductor of described the first branch road, the temperature coefficient of the total current that described parallel-current is exported was near 0.
Fig. 1 is the structural representation of the generation circuit of zero-temperature coefficient electrical current provided by the invention.In the circuit shown in Figure 1, can be divided into two zones, positive temperature coefficient region and negative temperature coefficient region to the NMOS pipe according to the difference of temperature coefficient.When N pipe during near cut-off region, drain-source current increases with the rising of temperature; When the N pipe was operated in the saturation region, drain-source current reduced with the rising of temperature.Be stranded this, adopt the structure of upper figure, the MN4 pipe on the left side is in the saturation region, the MN1 on the right, and MN2 and MN3 pipe all are operated in sub-threshold region.Adjust the dimension scale of both sides pipe, finally can make total current, the electric current that namely flows through MP2 is zero-temperature coefficient.
Fig. 2 is another structural representation of circuit shown in Figure 1.By a PMOS pipe zero-temperature coefficient electrical current that this obtains is exported to external circuit in the circuit shown in Figure 2.
Fig. 3 is circuit shown in Figure 1 at the current curve diagram of-40 degree in the temperature ranges of 125 degree.To on example test and draw, spend in the temperature ranges of 125 degree-40, the circuit that parallel circuit is exported is a more level and smooth temperature curve, namely exporting total current varies with temperature very little, curent change is in 2uA, and the size of this curent change can be ignored usually, therefore can think that the residing electric current of parallel circuit is the electric current of zero-temperature coefficient.
By on can draw, adopt the parallel circuit structure, article one, branch road produces the positive temperature coefficient (PTC) that raises with temperature, another branch road produces negative temperature coefficient, final so that the total current that parallel circuit produces is with not temperature variant current source, reached in the situation that does not adopt bandgap and to have produced the not purpose of temperature variant current source, realized simple.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the described protection domain of claim.
Claims (6)
1. the generation circuit of a zero-temperature coefficient electrical current, it is characterized in that, comprise a current output circuit, one end of described current output circuit links to each other with external circuit, one end links to each other with high level, and the other end links to each other with an end of a circuit in parallel, the other end ground connection of wherein said parallel circuit, described parallel circuit comprises the first branch road and the second branch road, wherein:
Described the first branch road is used for producing temperature coefficient and is negative electric current when temperature raises;
It is positive electric current that described the second branch road is used for producing temperature coefficient when temperature raises;
Wherein, the temperature coefficient of the total current behind the electric current weighting that produces of described the first branch road and described the second branch road is zero.
2. circuit according to claim 1 is characterized in that:
Described current output circuit is metal-oxide-semiconductor.
3. circuit according to claim 1 is characterized in that:
Described the first branch road and described the second branch road include metal-oxide-semiconductor, each included metal-oxide-semiconductor of wherein said the first branch road all is operated in the saturation region, each included metal-oxide-semiconductor of described the second branch road all is operated in sub-threshold region, and the dimension scale of metal-oxide-semiconductor is identical on the same branch road.
4. circuit according to claim 3 is characterized in that:
Described the first branch road comprises a metal-oxide-semiconductor, and described the second branch road comprises three metal-oxide-semiconductors.
5. it is characterized in that according to claim 3 or 4 described circuit:
The size of the total current that described the first branch road and described the second branch road produce is that zero-temperature coefficient is to obtain by the dimension scale of adjusting the included metal-oxide-semiconductor of the first branch road and/or the second branch road.
6. circuit according to claim 5 is characterized in that:
If described the first branch road comprises a metal-oxide-semiconductor, described the second branch road comprises three metal-oxide-semiconductors, when the dimension scale of each included metal-oxide-semiconductor of described the second branch road was 90～110 times of dimension scale of each included metal-oxide-semiconductor of described the first branch road, the temperature coefficient of the total current behind the electric current weighting that described the first branch road and described the second branch road produce was zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210098008.7A CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210098008.7A CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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| CN103365329A true CN103365329A (en) | 2013-10-23 |
| CN103365329B CN103365329B (en) | 2015-06-17 |
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| CN201210098008.7A Active CN103365329B (en) | 2012-04-05 | 2012-04-05 | Generation circuit of zero-temperature-coefficient currents |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103955252A (en) * | 2014-04-14 | 2014-07-30 | 中国科学院微电子研究所 | Reference current generation circuit of three-dimensional memory and method for generating reference current |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504983A1 (en) * | 1991-03-20 | 1992-09-23 | Koninklijke Philips Electronics N.V. | Reference circuit for supplying a reference current with a predetermined temperature coefficient |
| KR20050093516A (en) * | 2004-03-19 | 2005-09-23 | 엘지전자 주식회사 | Current reference circuit |
| TW200923611A (en) * | 2007-11-23 | 2009-06-01 | Cmsc Inc | Reference circuit capable of adjusting temperature coefficient |
| CN202075652U (en) * | 2011-03-29 | 2011-12-14 | 西安华芯半导体有限公司 | High-precision current reference source with pure MOS structure |
| CN102346497A (en) * | 2011-05-27 | 2012-02-08 | 上海宏力半导体制造有限公司 | Reference current generating circuit |
-
2012
- 2012-04-05 CN CN201210098008.7A patent/CN103365329B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504983A1 (en) * | 1991-03-20 | 1992-09-23 | Koninklijke Philips Electronics N.V. | Reference circuit for supplying a reference current with a predetermined temperature coefficient |
| KR20050093516A (en) * | 2004-03-19 | 2005-09-23 | 엘지전자 주식회사 | Current reference circuit |
| TW200923611A (en) * | 2007-11-23 | 2009-06-01 | Cmsc Inc | Reference circuit capable of adjusting temperature coefficient |
| CN202075652U (en) * | 2011-03-29 | 2011-12-14 | 西安华芯半导体有限公司 | High-precision current reference source with pure MOS structure |
| CN102346497A (en) * | 2011-05-27 | 2012-02-08 | 上海宏力半导体制造有限公司 | Reference current generating circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103955252A (en) * | 2014-04-14 | 2014-07-30 | 中国科学院微电子研究所 | Reference current generation circuit of three-dimensional memory and method for generating reference current |
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| CN103365329B (en) | 2015-06-17 |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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