CN103365091A - 一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 - Google Patents
一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 Download PDFInfo
- Publication number
- CN103365091A CN103365091A CN2012100850929A CN201210085092A CN103365091A CN 103365091 A CN103365091 A CN 103365091A CN 2012100850929 A CN2012100850929 A CN 2012100850929A CN 201210085092 A CN201210085092 A CN 201210085092A CN 103365091 A CN103365091 A CN 103365091A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- magnetic metal
- mask
- mask liquid
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000007788 roughening Methods 0.000 title abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000004005 microsphere Substances 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 37
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 229910000640 Fe alloy Inorganic materials 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 32
- 229910052594 sapphire Inorganic materials 0.000 claims description 32
- 239000010980 sapphire Substances 0.000 claims description 32
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 239000002923 metal particle Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 241001012508 Carpiodes cyprinus Species 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- -1 tetramethyl aqua ammonia Chemical compound 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 13
- 238000000605 extraction Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000003760 magnetic stirring Methods 0.000 description 3
- 239000002077 nanosphere Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210085092.9A CN103365091B (zh) | 2012-03-28 | 2012-03-28 | 一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210085092.9A CN103365091B (zh) | 2012-03-28 | 2012-03-28 | 一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103365091A true CN103365091A (zh) | 2013-10-23 |
CN103365091B CN103365091B (zh) | 2015-05-06 |
Family
ID=49366748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210085092.9A Expired - Fee Related CN103365091B (zh) | 2012-03-28 | 2012-03-28 | 一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103365091B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064638A (zh) * | 2014-06-26 | 2014-09-24 | 圆融光电科技有限公司 | Led透明导电层的粗化方法及真空设备 |
CN107919270A (zh) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN110858542A (zh) * | 2018-08-24 | 2020-03-03 | 创王光电股份有限公司 | 光阻处理系统 |
CN110867506A (zh) * | 2019-11-06 | 2020-03-06 | 安晟技术(广东)有限公司 | 一种消膜剂、其制备方法和应用 |
CN115537766A (zh) * | 2022-10-20 | 2022-12-30 | 江西乾照光电有限公司 | 掩膜组件及led芯片的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4664748A (en) * | 1984-11-01 | 1987-05-12 | Fuji Electric Company Ltd. | Surface roughening method |
JPH04165624A (ja) * | 1990-10-30 | 1992-06-11 | Fujitsu Ltd | 絶縁膜上のめっき配線方法 |
US20080008964A1 (en) * | 2006-07-05 | 2008-01-10 | Chia-Hua Chan | Light emitting diode and method of fabricating a nano/micro structure |
CN101976712A (zh) * | 2010-08-25 | 2011-02-16 | 中国科学院半导体研究所 | 一种增强led出光效率的粗化方法 |
CN102169930A (zh) * | 2011-03-07 | 2011-08-31 | 山东大学 | 一种金属纳米颗粒辅助实现发光二极管表面粗化的方法 |
CN102280541A (zh) * | 2011-08-29 | 2011-12-14 | 中国科学院力学研究所 | 一种蓝宝石基片表面有序粗化方法及蓝宝石基片、led制备方法和led |
-
2012
- 2012-03-28 CN CN201210085092.9A patent/CN103365091B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4664748A (en) * | 1984-11-01 | 1987-05-12 | Fuji Electric Company Ltd. | Surface roughening method |
JPH04165624A (ja) * | 1990-10-30 | 1992-06-11 | Fujitsu Ltd | 絶縁膜上のめっき配線方法 |
US20080008964A1 (en) * | 2006-07-05 | 2008-01-10 | Chia-Hua Chan | Light emitting diode and method of fabricating a nano/micro structure |
CN101976712A (zh) * | 2010-08-25 | 2011-02-16 | 中国科学院半导体研究所 | 一种增强led出光效率的粗化方法 |
CN102169930A (zh) * | 2011-03-07 | 2011-08-31 | 山东大学 | 一种金属纳米颗粒辅助实现发光二极管表面粗化的方法 |
CN102280541A (zh) * | 2011-08-29 | 2011-12-14 | 中国科学院力学研究所 | 一种蓝宝石基片表面有序粗化方法及蓝宝石基片、led制备方法和led |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064638A (zh) * | 2014-06-26 | 2014-09-24 | 圆融光电科技有限公司 | Led透明导电层的粗化方法及真空设备 |
CN104064638B (zh) * | 2014-06-26 | 2017-12-15 | 圆融光电科技有限公司 | Led透明导电层的粗化方法及真空设备 |
CN107919270A (zh) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN110858542A (zh) * | 2018-08-24 | 2020-03-03 | 创王光电股份有限公司 | 光阻处理系统 |
CN110867506A (zh) * | 2019-11-06 | 2020-03-06 | 安晟技术(广东)有限公司 | 一种消膜剂、其制备方法和应用 |
CN115537766A (zh) * | 2022-10-20 | 2022-12-30 | 江西乾照光电有限公司 | 掩膜组件及led芯片的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103365091B (zh) | 2015-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103365091B (zh) | 一种led芯片或衬底表面粗化用掩膜液及其制备方法与应用 | |
CN106252476B (zh) | 一种GaN 基发光二极管芯片的制备方法 | |
CN105140354B (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN100395377C (zh) | 一种制备光子晶体的方法 | |
CN102064088A (zh) | 一种干法与湿法混合制备蓝宝石图形衬底的方法 | |
CN103035806A (zh) | 用于制备氮化物外延生长的纳米图形衬底的方法 | |
CN103311097A (zh) | 在蓝宝石衬底上制备微纳米图形的方法 | |
CN108508711A (zh) | 一种正性光刻胶的去除方法 | |
CN106711241A (zh) | 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 | |
CN102931300B (zh) | GaN基LED制造工艺中的一种背面金属反射层阵列的制作方法 | |
CN102540771A (zh) | 正性光刻胶用显影液及光刻工艺中的显影方法 | |
CN110444642A (zh) | 一种高亮度图形化复合衬底的制备方法 | |
CN108615673A (zh) | 一种光刻返工过程中半导体表面处理方法 | |
CN105226132B (zh) | 一种太阳能彩虹片返工工艺 | |
CN102142362A (zh) | 利用金属化合物的电泳沉积图案进行光刻的方法 | |
CN104659165A (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN103560079A (zh) | 一种通过缺陷钝化减少GaN外延缺陷的方法 | |
CN107123705A (zh) | 一种发光二极管的制备方法 | |
CN104103498A (zh) | 一种提高光刻胶灰化率的icp干式清洗方法 | |
CN110429160A (zh) | 一种高亮度pss复合衬底及其制作方法 | |
CN102646764A (zh) | 纳米级图案化蓝宝石衬底的全湿化学制备方法 | |
CN102790153A (zh) | 具有p-GaN层纳米碗状表面粗化的GaN基LED芯片的制作方法 | |
CN103311379B (zh) | 一种GaN基LED以及制造GaN基LED的方法 | |
CN105895750A (zh) | 一种四元芯片的GaP粗糙表面的制备方法 | |
CN107817655A (zh) | 一种用于降低光刻单面保护缺陷的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151120 Address after: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee after: Inspur Group Co., Ltd. Address before: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee before: Shandong Inspur Huaguang Optoelectronics Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160617 Address after: 276025 No. 28, Hangzhou Road, Linyi economic and Technological Development Zone, Linyi, Shandong Patentee after: Shandong Inspur Co., Ltd. Address before: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee before: Inspur Group Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150506 Termination date: 20170328 |