CN106711241A - 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 - Google Patents
一种石墨烯透明电极金刚石基紫外探测器及其制备方法 Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 123
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 122
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010891 electric arc Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000011435 rock Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 230000035515 penetration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 77
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000004528 spin coating Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000011161 development Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 230000003111 delayed effect Effects 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052774 Proactinium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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Abstract
本发明公开了一种石墨烯透明电极金刚石基紫外探测器及其制备方法,探测器从下至上至少包含绝缘衬底、金刚石紫外敏感层、透明石墨烯层和金属电极;金刚石紫外敏感层的表面处形成金刚石表面终端;所述透明石墨烯层设置于金刚石紫外敏感层的金刚石表面终端上;所述金刚石紫外敏感层中均布有若干三维结构。本发明结构利用石墨烯超高的面内电导特性和其对紫外光的全透过特性,以及三维结构金刚石紫外敏感层对紫外光入射增强的特性,提高了金刚石基紫外探测器的响应度及外量子效率。
Description
技术领域
本发明属于光电子领域,特别是涉及一种金刚石基紫外探测器及其制作方法。
背景技术
随着光学技术和微电子技术日新月异的发展,紫外探测技术在国民经济及国防建设诸多领域展现出不可替代的应用价值,极具发展前景,已广泛应用于辐射检测、消毒控制生物检测等,检测迅速、准确,而且直观清楚。另外,紫外探测技术在早期导弹预警、制导、通讯等军事领域也有着十分重要的应用。
硅基探测器由于硅材料为间接带隙、禁带宽度小(室温下约1.1eV)、本征载流子浓度高、耐化学腐蚀性能差、抗辐射能力差等特点,限制了其在紫外探测方面、高温以及恶劣环境下的应用。GaN和AlGaN作为化合物半导体,其自发极化和压电极化所产生的材料缺陷,界面态缺陷,以及Al在空气中氧化产生的缺陷严重影响了其器件的工作特性。
相比之下,作为拥有四面体晶格结构的单质半导体,金刚石材料从禁带宽度(5.5eV)、载流子迁移率(电子:4500cm2/V·s,空穴:3800cm2/V·s)、热导率(22W/cm·K)、击穿场强(>10MV/cm-1)、抗辐射、耐腐蚀等方面全面超越了前几代半导体材料,在克服了第三代半导体由于极化效应产生缺陷而造成的不足的同时还具备“日盲”特性,吸收截至波长降至约225nm,器件在可见光背景下工作时无需配置滤光片或介电涂层。可见,基于金刚石材料的紫外探测器具有独特的性能优势,和巨大的应用潜力,尤其是在抗辐射、系统重量要求比较高的武器装备、航空航天等领域,其将成为今后发展的主流方向。
然而目前仍有两个问题制约了金刚石基紫外探测器的发展,一、金属电极阻挡紫外线的入射,减小了有效探测面积,以及金属对紫外线的吸收都使得紫外探测器的响应度与外量子效应受到影响;二、平面结构设计限制了薄膜对紫外线的吸收。因此,新型透明电极材料,以及准三维结构的设计对实现对器件探测能力的提升有着迫切的需求。
发明内容
本发明的目的在于提供一种石墨烯透明电极金刚石基紫外探测器及其制备方法,以解决传统金属电极对紫外线的阻挡及吸收问题,以及平面结构对紫外线吸收的限制,提高现有金刚石紫外探测器的响应度和外量子效率。
为了实现上述目的,本发明采用如下技术方案:
一种石墨烯透明电极金刚石基紫外探测器,从下至上至少包含绝缘衬底、金刚石紫外敏感层、透明石墨烯层和金属电极;金刚石紫外敏感层的表面处形成金刚石表面终端;所述透明石墨烯层设置于金刚石紫外敏感层的金刚石表面终端上;所述金刚石紫外敏感层中均布有若干三维结构。
进一步的,所述绝缘衬底为金刚石、氮化铝、氧化铝或氧化镁;所述金刚石紫外敏感层为单晶或多晶形式,其厚度为0.1-20微米。优选的,绝缘衬底为金刚石,透明石墨烯为单层结构。
进一步的,所述若干三维结构为周期性的凸起或凹槽;所述凸起或凹槽截面形状为三角形、圆形或方形;边长或直径为0.1-50微米,间距为0.1-50微米,高度为0.1-5微米。
进一步的,所述金刚石表面终端为氧、氮或氟终端。
进一步的,所述透明石墨烯层为单层或多层石墨烯结构,其覆盖在金刚石紫外敏感层上,与金刚石表面终端紧密接触。
进一步的,透明石墨烯层未完全填充满凹槽三维结构中的凹槽,凹槽内部具有空隙。
进一步的,透明石墨烯层未完全填充满凸起三维结构中凸起之间形成的凹槽,凹槽内部具有空隙。
进一步的,所述金属电极为金、钯、铂、钛、钨、锆、钼中一种或几种。优选的,金属电极为钨/金或者钯/金组合。
一种石墨烯透明电极金刚石基紫外探测器的制备方法,包括如下步骤:
1)对绝缘衬底进行清洗及预处理;
2)在绝缘衬底上外延一层金刚石紫外敏感层;
3)利用光刻、刻蚀技术在金刚石紫外敏感层上获得周期性排布的凸起或凹槽三维结构,同时形成台面结构;
4)对外延的金刚石紫外敏感层表面处理,形成金刚石表面终端;
5)在三维结构表面形成单层或多层透明石墨烯层,或者将制备好的石墨烯薄膜转移至三维结构表面形成透明石墨烯层;
6)利用光刻、电子束蒸发技术,在金刚石紫外敏感层以及透明石墨烯层上形成金属电极,金属电极部分覆盖透明石墨烯层,金刚石紫外敏感层上的下金属电极为条形或闭合环形结构,透明石墨烯层上的上金属电极为条形或圆形。
进一步的,步骤1)中所述预处理包含酸液清洗(HCl、H2SO4、HNO3、HClO4、HF)、等离子体表面处理和成核处理。
进一步的,步骤2)中,外延方法为微波等离子体化学气相沉积、热丝气相沉积或直流电弧放电沉积;步骤3)中,三维结构制备方法为电感耦合等离子体刻蚀或反应离子刻蚀;步骤4)中,表面处理为反应离子刻蚀、气氛处理或退火处理;步骤5)中,形成透明石墨烯层的方法为真空退火、化学气相沉积或原子层沉积;真空退火方法其真空度为10-6-10-1Torr,退火温度为800-1100℃,退火时间为10-90分钟;化学气相沉积气压为0.1-100Torr,沉积温度为800-1000℃,沉积时间为10-60分钟。
进一步的,步骤5)中利用光刻、氧处理技术将透明石墨烯薄层制备成台面大小的形状。
本发明旨在提供一种石墨烯透明电极金刚石基紫外探测器,所述紫外探测器至少包含其结构从下之上包含绝缘衬底、金刚石紫外敏感层(包含三维结构)、金刚石表面终端、透明石墨烯层、金属电极。其中金刚石紫外敏感层位于绝缘衬底上方,且包含三维结构;金刚石表面终端位于金刚石紫外敏感层表面;透明石墨烯层位于金刚石表面终端之上,与其紧密接触;金属电极分别位于金刚石紫外敏感层(三维结构台面下方)和透明石墨烯层(三维结构台面上方)。
相比现有技术,本发明具有以下有益效果:
1)引入对紫外线全透过的石墨烯材料,避免传统金属电极对紫外线的阻挡及吸收问题,增加入射至金刚石敏感层的紫外线数量。相比其他透明导电材料,石墨烯材料层内导电能力极强,避免了电流在金属电极周围的集中现象,使得紫外线在金刚石敏感层中产生的电子空穴对能较高效率地被电极俘获。此外,作为碳原子两种不同杂化方式(sp2石墨烯和sp3金刚石)的代表材料,仅有2%的晶格失配,显著降低了由失配位错引起的界面态,减少其对紫外线的吸收。
2)紫外线在金刚石中穿透深度大约为10微米,而传统平面结构只能俘获浅表层内紫外线产生的电子空穴对。因此在本发明中引入三维结构设计,一方面提高紫外线的利用率,另一方面提高金属电极对电子空穴对的俘获效率。
3)金刚石表面拥有较高的声子能量和较低的表面缺陷,能够有效减少石墨烯与金刚石界面处的电荷杂质散射和光学声子散射,提高石墨烯中载流子的迁移率。通过不同终端的控制,能够进一步控制二者界面态,减少界面对紫外线的吸收。
基于上述有益效果,本发明的实施能够提高现有金刚石基紫外探测器的响应度和外量子效率。
附图说明
图1为本发明一种石墨烯透明电极金刚石基紫外探测器的截面结构示意图;
图2a-2f为本发明具体实施例1的制备流程截面示意图,其中图2a为衬底处理,图2b为紫外敏感金刚石层外延,图2c为三维结构制备,图2d为表面终端处理,图2e为石墨烯层制备,图2f为金属电极制备;
图3为本发明具体实施例1探测器结构俯视图;
图4a-4f为本发明具体实施例2的制备流程截面示意图,其中图4a为衬底处理,图4b为紫外敏感金刚石层外延,图4c为三维结构制备,图4d为表面终端处理,图4e为石墨烯层制备,图4f为金属电极制备;
图5为本发明具体实施例2探测器结构俯视图;
图6a-6f为本发明具体实施例3中心上电极探测器制备流程截面示意图,其中图6a为衬底处理,图6b为紫外敏感金刚石层外延,图6c为三维结构制备,图6d为表面终端处理,图6e为石墨烯层制备,图6f为金属电极制备;
图7本发明具体实施例3探测器结构俯视图。
具体实施方式
以下结合附图及具体实例进一步说明本发明。
请参阅图1所示,本发明一种石墨烯透明电极金刚石基紫外探测器,包括绝缘衬底1、覆盖在衬底上的金刚石紫外敏感层2,在金刚石敏感层中包含了三维结构21、金刚石敏感层上方为表面处理形成的金刚石表面终端3、表面终端上方均匀覆盖着透明石墨烯层4并与其紧密接触、多个金属电极5分别位于金刚石紫外敏感层上(三维结构台面下方)和透明石墨烯层上(三维结构台面上方)。
本发明的绝缘衬底根据金刚石紫外敏感层及其生长条件,可采用耐高温、晶格常数相近的金刚石、氮化铝、氧化铝、氧化镁等材料。
本发明的金刚石紫外敏感层2可以采用单晶或多晶形式。晶界对光生载流子的俘获与释放时间较长,影响探测器的响应时间,因此优选采用单晶形式金刚石材料。其厚度为0.1-20微米。基于紫外线在金刚石材料中的穿透深度,优选其厚度为10微米。
进一步地,本发明金刚石紫外敏感层2包含三维结构21设计,一方面增强紫外线的入射,另一方面增加金属电极对光剩载流子的俘获效率。三维结构21为周期性的金刚石凸起或凹槽。更进一步地,该凸起或凹槽形状包含三角柱、圆柱、方柱等,其边长或直径为0.1-50微米,间距为0.1-50微米,高度为0.1-5微米。
本发明的金刚石表面终端3包含氧、氮、氟终端等,用以调控石墨烯层4与金刚石紫外敏刚层界面处的界面态,减少其对光生载流子的俘获以及界面处电荷杂质散射和光学声子散射。
本发明的透明石墨烯层4包含单层或多层石墨烯结构,其对220nm紫外线透过率为95%。完整的石墨烯层均匀覆盖在台面上方的金刚石敏感层上,与金刚石表面终端紧密接触;优选的,透明石墨烯为单层结构。
本发明的金属电极5包含金、钯、铂、钛、钨、锆、钼等一种或几种,台面下方金属电极结构为环形或条形结构,台面上方金属电极为条形、圆形等结构,上下金属电极间距为5-500微米。优选的,金属电极为钨/金或者钯/金组合。
本发明所述的金刚石基紫外探测器的制备方法,步骤包括如图2所示的衬底处理(图2a)、金刚石紫外敏感层沉积(图2b)、三维结构制备(图2c)、表面终端处理(图2d)、透明石墨烯层制备(图2e)、金属电极沉积(图2f)。
首先选取绝缘衬底1(金刚石、氮化铝、氧化铝、氧化镁等),对其进行酸液清洗(HCl、H2SO4、HNO3、HClO4、HF等)、常规有机清洗、等离子体表面处理、成核处理等。
接着在绝缘衬底1上外延一层单晶金刚石敏感层2,外延方法包含微波等离子体化学气相沉积、热丝气相沉积、直流电弧放电沉积等。本发明中优选微波等离子体化学气相沉积方法外延金刚石紫外敏感层,其生长的金刚石薄膜晶体结构较好,金属离子污染小,缺陷密度低,能提高光生载流子的俘获效率。
接着利用光刻、刻蚀技术在终端表面获得不同形状、不同占空比、不同尺寸的周期性凸起或凹槽三维结构21,同时形成台面结构。其刻蚀技术包括电感耦合等离子体(ICP)刻蚀、反应离子刻蚀(RIE)等。
接着对含有三维结构21的金刚石敏感层2利用反应离子刻蚀(RIE)、气氛处理、退火等技术手段对表面进行处理,形成不同终端3(氧、氮、氟等);
接着利用在真空退火、化学气相沉积、原子层沉积等技术手段三维结构表面形成单层或多层石墨烯薄膜4,其优势在于大大降低石墨烯/金刚石界面态密度,有利于提高紫外探测器的响应度和外量子效率。所述的真空退火方法其真空度为10-6-10-1Torr,退火温度为800-1100℃,退火时间为10-90分钟;所述的化学气相沉积气压为0.1-100Torr,沉积温度为800-1000℃,沉积时间为10-60分钟。或者将制备好的石墨烯薄膜转移至三维结构表面,其优点在于工艺成熟,控制简单。
接着利用光刻、氧处理或者等离子体刻蚀技术将石墨烯制备成台面大小的形状,成为均匀覆盖的透明导电层。
最后利用光刻、电子束蒸发技术,在金刚石敏感层(三维结构台面下方)以及石墨烯层(三维结构台面上方)形成金属电极5,上电极部分覆盖透明石墨烯层,为条形、圆形结构设计,下电极为条形或闭合环形设计。本发明优选电极金属为钨/金或者钯/金,钯和钨与金刚石表面粘附性较好,且钯金属与金刚石形成欧姆接触,钨金属与金刚石表面形成肖特基接触。因此,可以分别制备光导型和光伏型紫外探测器。
具体的说明,请参照以下实施例并结合附图。
具体实施例1:
本实施例是实现如图1所示的金刚石基紫外探测器结构的一种工艺流程,下面结合图2a-2f 详细阐述本实施例的工艺流程,对本发明作进一步说明。
1)首先选取金刚石绝缘衬底1,用H2SO4:HNO3=1:1,250℃对其清洗1小时,用HClO4,70℃对其清洗1小时,用HF对其清洗30分钟;使用丙酮、酒精、去离子水分别超声清洗5分钟;氮气吹干后(图2a)放入微波等离子体气相化学沉积腔体中,使用氢等离子体表面处理10分钟;使用甲烷气体进行成核处理10分钟。
2)接着同时通入甲烷、氢气,所用生长条件为C/H比为5%,气体流量500sccm,腔室压力100Torr,生长温度1050℃,微波功率3.5kW,外延30分钟,如图2b所示。外延获得金刚石紫外敏感薄膜2厚度约10微米,拉曼光谱半峰宽为2.8cm-1,XRD摇摆曲线半峰宽为0.01°。
3)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要刻蚀的圆形三维结构图形。
4)将带有图形的样品放入电感耦合等离子体(ICP)刻蚀设备中,刻蚀条件为氧气流量20sccm,腔室压力0.05mBar,ICP功率1kW,刻蚀时间30分钟,刻蚀深度约5-6微米,获得圆柱形凹陷三维结构21及台面,如图2c所示。
5)样品清洗吹干后放入220nm紫外辐照空间内15分钟,将三维结构表面处理为氧终端3,如图2d所示。
6)将铜箔上生长的石墨烯表面均匀旋涂PMMA光刻胶,接着将其放入FeCl3饱和溶液中腐蚀掉铜箔。包含石墨烯的PMMA层则会漂浮与液体表面。将金刚石浸入FeCl3饱和溶液,使包含石墨烯的PMMA层附着在其表面,之后用丙酮浸泡30分钟去除PMMA,石墨烯则留在了金刚石材料表面,如图2e所示。
7)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要蒸发金属电极的图形。
8)形成金属电极5,如图2f所示。
9)取出沉积完成的金刚石样品,浸泡在N-甲基吡咯烷酮(NMP)溶液中,并120℃水浴5分钟,然后超声剥离掉曝光区域以外的金属电极5,获得石墨烯透明电极金刚石基紫外探测器,其俯视图如图3所示。
具体实施例2:
1)1,用H2SO4:H2O2=1:1,对其清洗1小时,1:10稀释HCl对其清洗3分钟;使用纳米金刚石颗粒研磨氧化镁衬底表面以获得较高的形核密度以及粘附性;使用丙酮、酒精、去离子水分别超声清洗5分钟(图4a);
2)氮气吹干后放入热丝化学气相沉积设备腔体中,接着同时通入甲烷、氢气,所用生长条件为C/H比为3%,腔室压力1kPa,生长温度900℃,钨丝温度1900℃,外延30分钟,如图4b所示。外延获得金刚石紫外敏感薄膜2厚度约10微米。
3)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要刻蚀的方形三维结构图形。
4)将带有图形的样品放入反应离子刻蚀(RIE)设备中,刻蚀条件为氧气流量100sccm,腔室压力1Torr,功率200W,刻蚀时间3小时,刻蚀深度约3-4微米,获得方柱形凸起三维结构21及台面,如图4c所示。
5)改变RIE条件,四氟化碳气体流量100sccm,腔室压力1Torr,功率80W,处理时间1分钟,将三维结构表面处理为氟终端3,如图4d所示。
6)样品清洗后放入真空退火设备,本底真空保持在0.1Pa左右,温度为850℃,退火时间45分钟,在三维结构表面形成一层石墨烯结构,如图4e所示。
7)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要蒸发金属电极的图形。
8)将光刻好的样品置于电子束蒸发设备当中,本底真空抽至5×10-4Pa后,在样品表面依次沉积Pd、Au两层金属,各50、300nm,如图4f所示。
9)取出沉积完成的金刚石样品,浸泡在N-甲基吡咯烷酮(NMP)溶液中,并120℃水浴5分钟,然后超声剥离掉曝光区域以外的金属电极,获得石墨烯透明电极金刚石基紫外探测器,其俯视图如图5所示。
具体实施例3:
1)首先选取氮化铝绝缘衬底,用H2SO4:H2O2=3:1,对其清洗1小时,1:10稀释HF对其清洗3分钟;使用丙酮、酒精、去离子水分别超声清洗5分钟;氮气吹干后(图6a)放入微波等离子体气相化学沉积腔体中,使用氢等离子体表面处理10分钟;使用甲烷气体进行成核处理10分钟。
2)接着同时通入甲烷、氢气,所用生长条件为C/H比为5%,气体流量500sccm,腔室压力100Torr,生长温度1050℃,微波功率3.5kW,外延30分钟,如图6b所示。外延获得金刚石紫外敏感薄膜厚度约10微米。
3)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要刻蚀的三角形三维结构图形。
4)将带有图形的样品放入电感耦合等离子体(ICP)刻蚀设备中,刻蚀条件为氧气流量20sccm,腔室压力0.05mBar,ICP功率1kW,刻蚀时间30分钟,刻蚀深度约5-6微米,获得三角柱凹陷三维结构及台面,如图6c所示。
5)样品清洗氮气吹干后放入微波等离子体气相化学沉积腔体中,选取条件氮气流量100sccm,腔室压力120Torr,温度900℃,处理时间10分钟,将三维结构表面处理为氮终端,如图6d所示。
6)样品清洗后放入电子束蒸发设备当中,本底真空抽至5×10-4Pa后,在样品表面沉积铜金属200nm。
7)再将样品放入气相化学沉积设备,氢气气氛中加热至750℃,流量为20sccm,5%H/C比的甲烷和氢气混合气氛中生长10分钟,腔室压力为1Torr,温度为800℃,在Cu表面形成一层石墨烯结构。再用FeCl3饱和溶液腐蚀掉Cu金属,石墨烯层则保留在三维结构表面,如图6e所示。
8)取出外延后的样品,使用丙酮、酒精、去离子水分别超声清洗5分钟,旋涂一层AZ5214光刻胶,将旋涂好光刻胶的单晶金刚石样品在95℃条件下烘烤90秒,使用设计好的掩膜版进行紫外光刻曝光6.5s,显影45s去掉被曝光的光刻胶,留下需要蒸发金属电极的图形。
9)将光刻好的样品置于电子束蒸发设备当中,本底真空抽至5×10-4Pa后,在样品表面依次沉积Pd、Au两层金属,各50、300nm,如图6f所示。
10)取出沉积完成的金刚石样品,浸泡在丙酮溶液中5分钟,然后超声剥离掉曝光区域以外的金属电极,获得石墨烯透明电极金刚石基紫外探测器,其俯视图如图7所示。
最后应说明的是,以上实施方案仅用以说明本发明的技术方案,而非对其限制,本领域的普通技术人员应当理解:其依然可以对前述方案所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明装置方案的精神和范围。
Claims (10)
1.一种石墨烯透明电极金刚石基紫外探测器,其特征在于,从下至上至少包含绝缘衬底(1)、金刚石紫外敏感层(2)、透明石墨烯层(4)和金属电极(5);金刚石紫外敏感层(2)的表面处形成金刚石表面终端(3);所述透明石墨烯层(4)设置于金刚石紫外敏感层(2)的金刚石表面终端(3)上;所述金刚石紫外敏感层中均布有若干三维结构。
2.根据权利要求1所述的一种石墨烯透明电极金刚石基紫外探测器,其特征在于,所述绝缘衬底为金刚石、氮化铝、氧化铝或氧化镁;所述金刚石紫外敏感层为单晶或多晶形式,其厚度为0.1-20微米。
3.根据权利要求1所述的一种石墨烯透明电极金刚石基紫外探测器,其特征在于,所述若干三维结构为周期性的凸起或凹槽;所述凸起或凹槽截面形状为三角形、圆形或方形;边长或直径为0.1-50微米,间距为0.1-50微米,高度为0.1-5微米。
4.根据权利要求1所述的一种石墨烯透明电极金刚石基紫外探测器,其特征在于,所述金刚石表面终端为氧、氮或氟终端。
5.根据权利要求1所述的一种石墨烯透明电极金刚石基紫外探测器,其特征在于,所述透明石墨烯层为单层或多层石墨烯结构,其覆盖在金刚石紫外敏感层上,与金刚石表面终端紧密接触。
6.根据权利要求1所述的一种石墨烯透明电极金刚石基紫外探测器,其特征在于,所述金属电极为金、钯、铂、钛、钨、锆、钼中一种或几种。
7.权利要求1至6中任一项所述的一种石墨烯透明电极金刚石基紫外探测器的制备方法,其特征在于,包括如下步骤:
1)对绝缘衬底进行清洗及预处理;
2)在绝缘衬底上外延一层金刚石紫外敏感层;
3)利用光刻、刻蚀技术在金刚石紫外敏感层上获得周期性排布的凸起或凹槽三维结构,同时形成台面结构;
4)对外延的金刚石紫外敏感层表面处理,形成金刚石表面终端;
5)在三维结构表面形成单层或多层透明石墨烯层,或者将制备好的石墨烯薄膜转移至三维结构表面形成透明石墨烯层;
6)利用光刻、电子束蒸发技术,在金刚石紫外敏感层以及透明石墨烯层上形成金属电极,金属电极部分覆盖透明石墨烯层,金刚石紫外敏感层上的下金属电极为条形或者闭合环形结构,透明石墨烯层上的上金属电极为条形或圆形。
8.根据权利要求7所述的制备方法,其特征在于,步骤1)中所述预处理包含酸液清洗、等离子体表面处理和成核处理。
9.根据权利要求7所述的制备方法,其特征在于,步骤2)中,外延方法为微波等离子体化学气相沉积、热丝气相沉积或直流电弧放电沉积;步骤3)中,三维结构制备方法为电感耦合等离子体刻蚀或反应离子刻蚀;步骤4)中,表面处理为反应离子刻蚀、气氛处理或退火处理;步骤5)中,形成透明石墨烯层的方法为真空退火、化学气相沉积或原子层沉积;真空退火方法其真空度为10-6-10-1Torr,退火温度为800-1100℃,退火时间为10-90分钟;化学气相沉积气压为0.1-100Torr,沉积温度为800-1000℃,沉积时间为10-60分钟。
10.根据权利要求7所述的制备方法,其特征在于,步骤5)中利用光刻、氧处理技术将透明石墨烯薄层制备成台面大小的形状。
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