CN103365072A - Method for generating mask pattern - Google Patents
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- CN103365072A CN103365072A CN2013101139197A CN201310113919A CN103365072A CN 103365072 A CN103365072 A CN 103365072A CN 2013101139197 A CN2013101139197 A CN 2013101139197A CN 201310113919 A CN201310113919 A CN 201310113919A CN 103365072 A CN103365072 A CN 103365072A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
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- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a method for generating a mask pattern, and specifically relates to a method for generating, via a computer, a mask pattern to be used for an exposure apparatus. The exposure apparatus exposes an image of the mask pattern on a substrate by irradiating a mask. The method includes obtaining data of a main pattern to be formed on the substrate, and data of a pattern of a lower layer of a layer to which the main pattern is transferred, setting a generation condition for an auxiliary pattern with respect to the main pattern using data of the pattern of the lower layer, determining the auxiliary pattern using the generation condition, and generating data of the mask pattern including the main pattern and the determined auxiliary pattern.
Description
Technical field
The present invention relates to for the method that generates mask pattern.
Background technology
Along with the in the last few years miniaturization of semiconductor devices, it is difficult using little mask pattern of exposure sources transfer mask.Therefore, it is known carrying out optical near-correction (OPC) or the technology of the resolution characteristic of auxiliary patterns to improve mask pattern is provided at mask pattern.Here, resolution characteristic refers to the characteristic of relevant resolution, such as contrast, normalized image log slope (NILS), the depth of focus, processing window, the exposure nargin of image.Auxiliary patterns is also referred to as auxiliary pattern (assist feature, AF), Sub-resolution assist features (SRAF), or scattering strip (SB).Provide auxiliary patterns in the mode of separating with master pattern, to improve the resolution characteristic that will be transferred to the master pattern on the wafer.
Japanese Patent Application Laid-Open 2009-093138 number, United States Patent (USP) the 7th, 979,812 and 8,099, definite method of having discussed for auxiliary patterns for No. 684.Japanese Patent Application Laid-Open has been discussed for 2009-093138 number and has been used for using approximation space picture (aerial image) to determine the method for the position of auxiliary patterns.Whether Japanese Patent Application Laid-Open does not discuss transfer printing auxiliary patterns itself for 2009-093138 number.United States Patent (USP) the 7th, 979, disclose such method No. 812: the method is used for when be transferred to auxiliary patterns on the wafer after OPC, again carries out OPC on every side in the zone that auxiliary patterns will be transferred on it, and definite auxiliary patterns is so that transfer printing auxiliary patterns by halves.United States Patent (USP) the 8th, 099 has been discussed a kind of method for determining auxiliary patterns for No. 684, and its exposure first time that is used for double exposure to be being transferred to wafer with auxiliary patterns in the exposure for the first time, but removes the auxiliary patterns that is transferred by for the second time exposure.
At United States Patent (USP) the 7th, 979, in the invention of discussing in No. 812, the master pattern that be transferred to wafer is transferred, and auxiliary patterns is limited so that not by complete transfer printing, thereby has limited the effect of improving the resolution characteristic of master pattern by auxiliary patterns.According to the present inventor's inspection, if the size of auxiliary patterns increases, then the resolution characteristic of master pattern all improves in many cases.Yet, if the size of auxiliary patterns is too large, as at United States Patent (USP) the 8th, 099, to discuss in No. 684, itself is transferred to auxiliary patterns on the wafer.
Here, suppose by exposure pattern transfer is formed pattern and applied thereon on the wafer of stepped construction of resist to having wherein in lower floor, and use the pattern of transfer printing to carry out as the pattern of mask (overlayer) in lower floor and process.In this case, if by exposure transfer printing auxiliary patterns, then process described lower floor according to shape or the position of the auxiliary patterns of transfer printing.If by the part of the processed lower floor of auxiliary patterns with should not processed partially overlapping, then cause because the defective that the structure of the pattern of lower floor causes, and may be a problem.Yet, if do not overlap with not answering processed part by the part of the processed lower floor of auxiliary patterns, can not be a problem in some cases.In other words, depend on the relation between the transfer position of the position of pattern of lower floor and auxiliary patterns, even auxiliary patterns is transferred, also can not be a problem.
At United States Patent (USP) the 8th, 099, in the invention of discussing in No. 684, even by the auxiliary patterns that for the first time exposed transfer printing, by carrying out double exposure, be not retained on the wafer although auxiliary patterns is transferred on the wafer, thereby do not think the pattern of lower floor by auxiliary patterns and processed.In other words, the pattern of not considering lower floor is determined auxiliary patterns.
As mentioned above, in correlation technique, when definite auxiliary mask pattern, generate the method for auxiliary patterns in the relation between the position of not yet known pattern considering lower floor and the transfer position of auxiliary patterns.
Summary of the invention
The present invention is devoted to a kind of method for generating mask pattern, and it has improved the resolution characteristic of master pattern.
According to an aspect of the present invention, provide a kind of for generate the method that will be used for the mask pattern of exposure sources via computing machine, this exposure sources exposes by irradiation mask image to mask pattern on substrate, the method comprises: acquisition will be formed on the data of pattern of the lower floor of the layer that the data of the master pattern on the substrate and master pattern will be transferred to, use the data setting of pattern of described lower floor with respect to the formation condition of the auxiliary patterns of master pattern, determine auxiliary patterns with described formation condition, and the data that generate the mask pattern that comprises described master pattern and determined auxiliary patterns.
From the detailed description to exemplary embodiment below with reference to accompanying drawing, more features of the present invention and aspect will become clear.
Description of drawings
Incorporate in the instructions and consist of the accompanying drawing of the part of instructions into, illustrate exemplary embodiment of the present invention, feature and aspect, and be used from the principle of explaining invention with instructions one.
Fig. 1 is the view of example that the stepped construction of substrate is shown.
Fig. 2 A is the view that master pattern is shown.Fig. 2 B is the view that the pattern of lower floor is shown.Fig. 2 C is the view of position that the pattern of master pattern and lower floor is shown.Fig. 2 D is the view that the pattern after the processing of lower floor is shown.
Fig. 3 illustrates the according to an exemplary embodiment of the present invention process flow diagram of method for generating pattern.
Fig. 4 A is the view that illustrates for the mask pattern of explanation pattern resolution characteristic, and Fig. 4 B is the view that pattern and image thereof are shown.
Fig. 5 is the curve map that size and the relation between the linewidth error of mask pattern are shown.
Fig. 6 is the detail flowchart that step S108 is shown.
Fig. 7 is the view that the initial placement of master pattern and auxiliary patterns is shown.
Fig. 8 illustrates by method for generating pattern according to an exemplary embodiment of the present invention and definite mask pattern and the view of pattern transferring.
Fig. 9 illustrates by according to the method for generating pattern of correlation technique and definite mask pattern and the view of pattern transferring.
Figure 10 A is the view that the position of the pattern of master pattern and lower floor when dot pattern is formed on the interval in the situation of online and interval (L/S) pattern is shown, and Figure 10 B is the view that the pattern after the processing of lower floor is shown.
Embodiment
With reference to the accompanying drawings, various exemplary embodiments, feature and the aspect of invention will be explained below.
Exemplary embodiment of the present invention can be applied to make various devices, such as semi-conductor chip (such as integrated circuit (IC) and large-scale integrated (LSI)), the display element that is used for liquid crystal panel, the detecting element that is used for magnetic head, the image-forming component such as the charge-coupled device (CCD) sensor, maybe can be applied to generate the data of mask (dish) pattern that is used in the micromechanics.
Fig. 1 illustrates the example of the stepped construction of the wafer that will expose (substrate) in the exemplary embodiment.Etch layer 2, hard mask layer 4, patterned layer 6 and photosensitive material (resist) 8 are laminated on the not shown wafer.In patterned layer 6, the pattern 62 that has been formed and anti-reflective film (bottom antireflective coating (BARC)) 64 is formed.
Pattern forming position reason will be described.At first, in exposure technology, use exposure sources irradiation mask, and the sub-image of mask pattern is formed on the photosensitive material 8.Here, the light transmission of supposing the material of mask is 100%, and the light transmission of the pattern part on the mask is low (for example, 0%).Because the background of mask becomes clear, so such mask can be called as the light field mask.Then, the sub-image that is formed on the photosensitive material 8 is developed.If photosensitive material 8 is eurymeric, the part that then is exposed with the exposure that is equal to or greater than predetermined threshold is removed by development, so that the photosensitive material that is on the pattern part (dark-part) on the mask remains.For example, if the pattern on the mask (dark-part) is pattern 200, then isolated patterns remains as point, and it is called as residue pattern (left-over pattern) (line pattern).On the contrary, if photosensitive material 8 is minus, the part that then is not exposed with the exposure that is equal to or greater than predetermined threshold is removed by development, so that the photosensitive material that is in the background parts (highlights divides) on the mask remains.For example, if the pattern on the mask (dark-part) is pattern 200, then isolated patterns is removed to form hole shape, and it is called as punching pattern (punching pattern) (intermittent pattern).Recently, the type of having developed the conversion developing solution with the top described method of developing of carrying out on the contrary.Such development treatment is called as negative development (development recited above is positive development).In other words, the pattern that finally obtains by carrying out negative development at the positive type light sensitive material and the pattern that finally obtains by carrying out positive development at negative photosensitive material are in fact identical.
As mentioned above, by developing, mask pattern is transferred on the photosensitive material 8.Then, based on as described above and the pattern photosensitive material 8 that forms is processed the patterned layer 6 as lower floor.For example, if photosensitive material 8 is minus, then by development treatment, the part of pattern 62 is removed from reserve part.
With reference to Fig. 2 A, 2B, 2C and 2D concrete example is described.Fig. 2 A is the planimetric map that the pattern (master pattern) 200 of the mask that will be transferred to photosensitive material (substrate) 8 is shown.Fig. 2 B is the planimetric map that the pattern 62 that is formed on the patterned layer 6 is shown.Pattern 62 is line and interval (L/S pattern), and its center line part 220 and compartment 230 are alternately settled.Fig. 2 C is the planimetric map that pattern 62 and the position of the pattern 200 of the mask that is transferred to photosensitive material 8 are shown.Illustrated among Fig. 2 C, when the pattern 200 of mask is transferred to photosensitive material 8, the pattern 200 of mask and the some parts overlaid of the line part 220 in the pattern 62.If photosensitive material 8 is minus, perhaps, be negative development if photosensitive material 8 is eurymeric and development treatment, then form as mentioned above the punching pattern.In other words, in the processing procedure of patterned layer 6, line part 220 is removed from lap, and line part 220 is divided as illustrated among Fig. 2 D.The pattern 200 of illustrated mask has the function of line of cut part 220 among Fig. 2 A, thereby in some cases, pattern 200 can be called as cutting pattern.Further, similar to this example, not to use the two-dimensional pattern (such as L shaped pattern or U-shaped pattern) that extends at both direction, but as shown in Fig. 2 D, forming pattern, arrange or the 1D layout thereby this pattern can be called as one dimension.In many cases, the device making method of one-dimensional placement is applied to can the commercial semiconductive logic device that obtains, and the grid technology or the smithcraft that also are applied to static RAM (SRAM).So, the device making method of one-dimensional placement can be fully understood by those skilled in the art.
Mask pattern generating method will be described.Fig. 3 is the process flow diagram that illustrates according to the mask pattern generating method of exemplary embodiment.Carry out such generation method to generate the data of mask pattern by the messaging device such as computing machine, described mask pattern is used for comprising the exposure sources of projection optical system, and this projection optical system will comprise that the image projection of mask pattern of master pattern and auxiliary patterns is to substrate.
Further, in the exemplary embodiment, the lip-deep size of the thing of projection optical system equals the size (that is to say, the enlargement ratio of projection optical system is one times of multiplying power) of the image on the image surface of projection optical system.Yet in fact, in many cases, the enlargement ratio of projection optical system is four times of multiplying powers or five times of multiplying powers, thereby mask pattern need to be considered the enlargement ratio of projection optical system and be set up.
In step S102, obtain the data of main mask pattern, described main mask pattern need to be positioned on the thing surface of projection optical system of exposure sources.The data of master pattern are the design loads that is designed in the design of mask pattern is processed.Master pattern is to be transferred to the pattern that wafer is purpose.Here, when the pattern shown in Fig. 2 A is made as a unit (repetitive), the design load of master pattern be 600nm on the directions X and on Y-direction 550nm and by periodic arrangement.Illustrated pattern comprises six isolated patterns (figure) of pattern P AT1 to PAT6 among Fig. 2 A.The relative position of pattern P AT1 to PAT6 will illustrate at table 1 middle finger.The size of each pattern among the pattern P AT1 to PAT6 be 32nm on the directions X and on Y-direction 50nm.Mask is binary (binary) mask.
Table 1
Then, in step S104, obtain the data of the pattern 62 in the patterned layer 6 below the photosensitive material 8.The data of pattern 62 can be the design loads that is designed in the design of mask pattern is processed, or the data of actual measurement.Here, the data of illustrated pattern among Fig. 2 B are made as the design load of pattern 62.By means of the line part 220 of extending at directions X and compartment 230 configuration patterns 62.Width is that the line part 220 of 25nm is parallel to each other with the spacing of 50nm and is placed on Y-direction.As mentioned above, process illustrated pattern among Fig. 2 B according to illustrated pattern among Fig. 2 A, to form illustrated pattern among Fig. 2 D.
Then, in step S106, the formation condition in order to the auxiliary patterns of the resolution characteristic of improving the master pattern of inputting among the step S102 is set.The data of the pattern 62 in the patterned layer 6 below the use photosensitive material 8 arrange formation condition.The part of the pattern transferring of hypothesis from the layer of photosensitive material 8, remove in the situation of the pattern 62 in the patterned layer 6, formation condition subsequently is set.In other words, on the layer of photosensitive material 8, formation condition is arranged so that auxiliary patterns can be transferred on the compartment 230 of illustrated pattern among Fig. 2 B, but auxiliary patterns does not allow to be transferred on the line part 220 except master pattern is transferred to part on it.This is because even auxiliary patterns is transferred on the compartment 230, line part 220 is not cut yet, and the electrical characteristics of line part 220 are not had adverse effect yet.
Further, with United States Patent (USP) the 7th, 979, do not consider the information of the pattern of lower floor, and auxiliary patterns does not allow to be transferred on any position in the correlation technique of representative No. 812.Therefore, limited the effect of improving the resolution characteristic of master pattern by means of auxiliary patterns.To resolution characteristic be described with concrete example.Fig. 4 A illustrates mask pattern.Have on the mask 100 of 100% light transmission, the isolated patterns 110 with light transmission of 0% is periodically settled in the horizontal and vertical directions with the interval of 100nm.In example, isolated patterns is the master pattern that need to be transferred to wafer, but the auxiliary patterns of the resolution characteristic of improving isolated patterns is not set.Each isolated patterns is square.Further, even in Fig. 4 A, arranged five isolated patterns in vertical and horizontal direction respectively, but supposing the calculating below the execution under in fact isolated patterns is by the condition of unlimited arrangements.
For the mask pattern among Fig. 4 A, the conditions of exposure of ring illumination is set, so that the wavelength of light source is 193nm, the numerical aperture of the emission side of projection optical system (NA) is 1.35, and illumination shape (distribution of the optical strength on the pupil plane of lamp optical system) has 0.98 outer sigma(overall diameter) and 0.784 interior sigma(interior diameter) (when the maximum gauge of pupil plane is 1).Fig. 4 B illustrates the simulation result that is formed on the image on the imaging surface under this conditions of exposure.Generally speaking, if exposure changes, then picture size changes.Therefore, in emulation, the reference exposure amount is set, so that in the reference focal position, the diameter of the hole shape image of isolated patterns is 50nm.The boundary line (edge) of the image that calculates with the reference exposure amount is curve 120.
Further, carry out the emulation that the exposure technology of wherein having considered in exposure process changes (fabrication error).In example,, in the situation of generation error aspect size, exposure and the focal position of isolated patterns, carry out and calculate in hypothesis.Particularly, suppose isolated patterns size reduction 2nm, the reference exposure amount has increased 5%, and the focal position has been offset 20nm from the reference focal position.Curve 130 is boundary lines of image when three kinds of exposure technologys variations occur simultaneously.In addition, all error amounts that are applied to size, exposure and the focal position of isolated patterns all are the factors that works to reduce picture size.Therefore, even when considering simultaneously these error amounts, also be no problem in assessment.
When the width (diameter) of the figure that is surrounded by curve 130 is X nm, by expressing the linewidth error Δ with the difference of the 50nm width (diameter) of the figure that is surrounded by curve 120, namely, value Δ=50-X nm.The desired value Δ is little, and this is because pattern becomes insensitive to the variation of exposure technology.When the size of isolated patterns was used as variable M, the pass between M and the linewidth error Δ tied up among Fig. 5 and illustrates.As seen in Figure 5, when M was approximately 70nm, the linewidth error Δ had minimum value.In other words, it is target size greater than 50nm(when having) the pattern of size when being used as mask pattern, pattern is insensitive to the variation of exposure technology.
Further, even can use various patterns as pattern for practical devices, as the simple isolated patterns of describing in the exemplary embodiment, pattern also can be applied to many patterns to the change of exposure technology insensitive this fact that becomes when mask pattern is formed greatlyr than target size.In addition, similarly, in auxiliary patterns, if the size of auxiliary patterns increases with master pattern, then in many cases, the resolution characteristic of master pattern improves.
Yet if the size of auxiliary patterns increases, auxiliary patterns itself more may be transferred to wafer.Because the structure of device, if auxiliary patterns is transferred in the position that may cause defective, then this causes reducing the fine ratio of product of device.
Therefore, in the exemplary embodiment, use as described above, arranges the formation condition of auxiliary patterns about the information of the pattern of the lower floor of photosensitive material, and allows auxiliary patterns to be transferred in ad-hoc location.Compare with correlation technique, this has improved the resolution characteristic of master pattern.Even auxiliary patterns is transferred to compartment 230, line part 220 is not cut yet, and the electrical characteristics of line part 220 are not had adverse effect yet.Therefore, suppressed the reduction of device fine ratio of product.
Then, in step S108, use the formation condition that in step S106, arranges, generate the data of mask pattern.Fig. 6 illustrates the detailed process of step S108.
At first, in step S110, evaluation index is set.In general, in optimization computation, use changes the algorithm of the value of parameter to be regulated according to the variation of the value of evaluation function (merit function).In some cases, evaluation function is called as optimization cost or tolerance.Maximum line width error when in the exemplary embodiment, exposure technology changes is set to evaluation function.18 kinds of conditions of table 2 indicating are set as exposure technology.In every kind of condition, the mask error during exposure (scale error of pattern), focal position error and exposure error are set to different value.
Table 2
Further, when auxiliary patterns is transferred on the line part 220 except the part that master pattern is transferred to, generate exceptional value with very large value etc. in evaluation function, the in-service evaluation function is assessed abnormality like this.In this case, if auxiliary patterns is transferred on the line part 220 except the part that master pattern is transferred to, then can be set to generate the information of indication abnormality, and evaluation function and abnormal state information can be set to evaluation index.In other words, based on the formation condition that in step S106, arranges evaluation index is set.
Then, in step S112, calculate the initial placement of auxiliary patterns.In the exemplary embodiment, use the auxiliary patterns of in Japanese Patent Application Laid-Open 2009-093138 number, discussing to determine that method carries out calculating.Fig. 7 shows master pattern 200 and the auxiliary patterns 320 that obtains by calculating.Zone 300 is scopes of a unit (repetitive) of pattern.Herein, the computing method of the initial placement of auxiliary patterns are not limited to this, and can use various computing method.
Then, in step S114, calculate the value (assessed value) of evaluation index.In the exemplary embodiment, be at exposure wavelength that 193nm, NA are 1.35, illumination shape is that cross-pole (cross pole) shape and polarization state with aperture angles of 0.98 outer sigma, 0.882 interior sigma and 60 degree are under the conditions of exposure of tangential polarization, carries out exposure emulation.In 18 kinds of exposure technologys of table 2 indicating, calculate the maximum line width error that when irradiation master pattern and auxiliary patterns, is transferred to the image of wafer (imaging surface).In other words, in 18 kinds of exposure technologys, calculate the size of the pattern P AT1 to PAT6 on the resist, and obtain the absolute value of the error between this size and the target size.The maximal value of absolute value is the value of the evaluation function (evaluation index) in the exemplary embodiment.As describing in step S102, the target size of all pattern P AT1 to PAT6 is 50nm on 32nm and the Y-direction on the directions X.
Then, in step S116, determine to finish or will continue to calculate.If determine to finish to calculate ("Yes" among the step S116), then process and proceed to step S120.If determine to continue to calculate ("No" among the step S116), then process and proceed to step S118.
In step S118, adjust master pattern and the size of auxiliary patterns and at least one in the position.In the exemplary embodiment, use Descended simplex method (downhill simplex method) algorithm to adjust size and the position of pattern, to improve the value of evaluation function.Algorithm is not limited to this, can adjust with any other algorithm size and the position of pattern.Further, in the exemplary embodiment, the two is adjusted for size and position.Yet, can only adjust in size and the position.In addition, can adjust the layout (whether auxiliary patterns is set) of auxiliary patterns.In addition, adjust position and the size of master pattern.Yet, can not adjust master pattern.
After in step S118, adjusting pattern, then in step S114, use master pattern and auxiliary patterns through adjusting, the value of assessment evaluation function.Then, in step S116, determine whether end process.As mentioned above, repeating step S114, S116 and S118 are until determine to want end process, to improve the value of evaluation function.In step S116, determine to want the condition of end process to comprise: adjusting number of times (namely, the number of times of execution in step S114) surpass that processing finishes really fixed condition in the situation of pre-determined number, perhaps the value of evaluation function satisfies that processing finishes really fixed condition in the situation of specified conditions in step S114.In the exemplary embodiment, the condition of determining end process is the termination condition that processing finishes when the adjustment number of times among the step S114 reaches 300.
At last, in step S120, use the assessment result among the step S114, determine mask pattern.Particularly, the master pattern and the auxiliary patterns that have separately the minimum value in the assessed value that 300 times calculate in step S114 are confirmed as final mask pattern, and the data of mask pattern are generated.Then, step S108 finishes.
Fig. 8 illustrates the mask pattern of determining by according to the process flow diagram of exemplary embodiment.Mask pattern comprise position or size through the master pattern 200 adjustment and auxiliary patterns 320 the two.Circular curve (curve 350 and curve 370) is the boundary line (edge) that is formed on the image on the wafer when mask pattern is positioned in the thing surface of exposure sources and is exposed.Since as table 2 indicating under 18 kinds of conditions computed image similarly, and image be shown as mutually overlapping, so that a plurality of curve is shown as is mutually overlapping.Curve 350 is pattern 200(pattern P AT3) image and curve 370 are images of auxiliary patterns.Also illustrate the L/S pattern shown in Fig. 2 B.What need to guarantee is, the image of auxiliary patterns 320 is transferred on the compartment 230 of L/S pattern, and image curve 370 is such.As determined in the formation condition of auxiliary patterns, even auxiliary patterns is transferred to compartment, also never affect performance of devices.Consider this point, allow the transfer printing auxiliary patterns.
The maximum line width error as the assessed value of evaluation function when using the mask pattern shown in Fig. 8 is 20.1nm.As mentioned above, in general, in many cases, when the size of auxiliary patterns when being large, the performance of the image of master pattern is enhanced.In the exemplary embodiment, allow auxiliary patterns to be transferred to compartment, thereby the size of permission auxiliary patterns is large and the image property of master pattern is enhanced.As mentioned above, if pattern in the lower floor of layer, that master pattern will be transferred to is line and interval, then the auxiliary patterns above the interval is defined as having the larger size of auxiliary patterns size than the line top, so that auxiliary patterns is transferred to compartment.
Then, example as a comparison, Fig. 9 shows the mask pattern of being determined by the method for generating pattern in the correlation technique.Fig. 9 shows, the position is different from position and the size of illustrated mask pattern among Fig. 8 with size.When the mask pattern among definite Fig. 9, in the situation of the pattern of not considering lower floor, use the auxiliary patterns formation condition that auxiliary patterns never is transferred, and use the evaluation index based on this formation condition.The maximum line width error as the assessed value of evaluation function when using illustrated mask pattern among Fig. 9 is 20.6nm.
From these results as seen, when the method for generating pattern that uses according to exemplary embodiment, it is less than the maximum line width error of the generation method of correlation technique that the maximum line width error becomes.This means that the method for generating pattern according to exemplary embodiment can reduce the susceptibility that exposure technology (mask error when namely exposing, focal position error and exposure error) is changed.Therefore, can improve the yield of semiconductor devices according to the method for generating pattern of exemplary embodiment.
As mentioned above, in the method for generating pattern according to exemplary embodiment, consider to be placed in the pattern-information of the layer of destination layer below, thereby stipulated to allow position that auxiliary patterns is transferred and the position of yield of devices aspect generation problem when auxiliary patterns is transferred.Adjust position and the size of auxiliary patterns based on top regulation, thereby compare with the method for correlation technique, the resolution characteristic of master pattern can be enhanced.
The stepped construction of the wafer that herein, will expose in the exemplary embodiment is not limited to the example among Fig. 1.For example, can between patterned layer 6 and hard mask layer 4, insert etching stop layer, perhaps can between hard mask layer 4 and etch layer 2, comprise other layers.The material of each layer is not limited to certain material.For example, if wire shaped pattern 62 forms by autoregistration double patterning method (SADP method), then in many cases, the material of pattern 62 comprises SiO
2
Use is called as the device making method of one dimension layout and has described exemplary embodiment, yet exemplary embodiment is not limited to this.For example, double-exposure technique (double patterning technology) is in the last few years always by the example of the technology of active research.This technology be wherein little pattern groups be exposed (transfer printing) to the wafer the time master pattern group be divided into the technology of two patterns.Then, carry out exposure-processed in each pattern groups of having separated, and pattern groups is merged to form the master pattern group at simple layer.In this case, for example, even the image of the auxiliary patterns in the second exposure technology is transferred on the pattern that is transferred, in some cases, still problem can not occur on the device in the first exposure technology.Pattern groups in the second exposure technology is considered to master pattern, and the pattern groups in the first exposure technology can directly be used according to the method for generating pattern of exemplary embodiment when being considered to background patterns.Yet, not only can be applied to double patterning according to the method for generating pattern of exemplary embodiment, but also can be applied to triple patternings and quadruple patterning.
Further, in the exemplary embodiment, in step S112, in the situation of not considering the pattern 62 in the lower floor, calculate the initial placement of auxiliary patterns.Yet the pattern 62 in the lower floor can be considered.
In the exemplary embodiment, master pattern and auxiliary patterns the two be sectional hole patterns.Yet master pattern and auxiliary patterns can not be sectional hole patterns.For example, master pattern and auxiliary patterns can be line pattern or two-dimensional pattern, and it represents with L shaped pattern, T shape pattern or U-shaped pattern.Scheme as an alternative, master pattern and auxiliary patterns can be the pattern groups that obtains by making up above-mentioned pattern.Further, in the exemplary embodiment, the pattern 62 in the lower floor is L/S patterns.Yet pattern 62 can comprise any other pattern.
Further, in the exemplary embodiment, the cutting pattern (punching pattern) of the sectional hole patterns among Fig. 2 A as cutting L/S pattern.Yet the effect of the sectional hole patterns in the one dimension arrangement is not limited to this.For example, as illustrated among Figure 10 A, sectional hole patterns 200 can be used as the position (that is, on compartment) that the residue pattern is formed on the position mobile half pitch on Y-direction from Fig. 2 C.In this case, among final performance such as Figure 10 B illustrated in, and point (being used for interconnecting the pattern of line part) is retained between the adjacent lines part of L/S pattern.Therefore, the sectional hole patterns group shown in Figure 10 A can be called as dot pattern (dot pattern group).In many cases, the formation method among Fig. 2 A to 2D is applied to the grid technology of SRAM, and the formation method among Figure 10 A and the 10B is applied to the smithcraft of SRAM.
During dot pattern in forming Figure 10 A, the condition that generates auxiliary patterns is: auxiliary patterns can be transferred on the line part among Fig. 2 B, but does not allow to be transferred to the compartment except the part that master pattern is transferred to.
Can also be by reading with the computer executable instructions of executive logging on storage medium (for example computer-readable recording medium of nonvolatile) to carry out one or more the computing machine of system or equipment of function in the above embodiment of the present invention, and by by the computing machine of system or equipment for example by reading and carry out the method for carrying out with one or more the function of carrying out in above-described embodiment from the computer executable instructions of storage medium, realize embodiments of the invention.Computing machine can comprise one or more in CPU (central processing unit) (CPU), microprocessing unit (MPU) or other circuit, and can comprise independently computing machine or the independently network of computer processor.Can for example from network or storage medium computer executable instructions be offered computing machine.Storage medium can be such as in the storer that comprises hard disk, random-access memory (ram), ROM (read-only memory) (ROM), distributed computing system, CD (such as compact disk (CD), digital versatile disc (DVD) or Blu-ray disc (BD) TM), flash memory device, the storage card etc. one or more.
According to above-described exemplary embodiment, generate the data of mask pattern.The mask data that generates is input to mask making facilities, such as electron beam drawing equipment.Draw mask pattern based on the input data at the mask base plate, draw the mask that mask pattern is arranged on it thereby make.
Then, manufactured mask is installed on the exposure sources, so that the substrate that has applied photosensitive material (resist) on it is exposed.In exposure sources, lamp optical system is used the light beam irradiates mask (graticule) from light source.Projection optical system with the image projection of mask pattern to wafer (substrate), with the exposure substrate.Then, the substrate through exposure is developed.Further, carry out other known processing at substrate, thereby make semiconductor devices.Processing comprises oxidation, film forming, vapour deposition, doping, planarization, etching, resist isolation, cutting, bonding and encapsulation.
Although reference example embodiment has described invention, it should be understood that to the invention is not restricted to disclosed exemplary embodiment.Below the scope of claim should be given the explanation of wide region, to comprise all distortion, equivalent structure and function.
Claims (13)
1. one kind is used for generating the method that will be used for the mask pattern of exposure sources via computing machine, and this exposure sources exposes by irradiation mask image to mask pattern on substrate, and the method comprises:
Acquisition will be formed on the data of pattern of the lower floor of the layer that the data of the master pattern on the substrate and master pattern will be transferred to;
Use the data of the pattern of described lower floor, the formation condition with respect to the auxiliary patterns of master pattern is set;
Determine auxiliary patterns with described formation condition; And
Generation comprises the data of the mask pattern of described master pattern and determined auxiliary patterns.
2. method according to claim 1, wherein, described formation condition comprises: specify in condition in the zone on the pattern of described lower floor, that do not allow the part of the described auxiliary patterns of transfer printing on it.
3. method according to claim 1, wherein, determining in the step of auxiliary patterns with described formation condition, by when changing auxiliary patterns, when master pattern and auxiliary patterns are used as mask pattern, calculating the image that will be transferred to substrate, and come evaluate image based on described formation condition, use assessment result to determine auxiliary patterns.
4. method according to claim 3, wherein, determining in the step of auxiliary patterns with described formation condition, come evaluate image with evaluation index, described evaluation index is abnormality with following assessment of scenario: in this case, the image existence that calculates does not allow in the part of the described auxiliary patterns of transfer printing thereon.
5. method according to claim 3 also comprises: by computed image in the position that changes master pattern and in the size at least one, use assessment result to determine master pattern.
6. method according to claim 1, wherein, described master pattern comprises be used to the cutting pattern of cutting the pattern in the described lower floor.
7. method according to claim 1, wherein, described master pattern comprises be used to the line part pattern connected to one another that makes the pattern in the described lower floor.
8. method according to claim 1, wherein, when the pattern in the lower floor of the layer that master pattern will be transferred to comprised line and interval, the size of the auxiliary patterns of top, interval was greater than the size of the auxiliary patterns of line top, so that the auxiliary patterns of top, interval is transferred on the interval.
9. one kind is used for generating the computing machine that will be used for the mask pattern of exposure sources, and this exposure sources exposes by irradiation mask image to mask pattern on substrate, and this computing machine comprises:
Processor is configured to:
Acquisition will be formed on the data of pattern of the lower floor of the layer that the data of the master pattern on the substrate and master pattern will be transferred to;
Use the data of the pattern of described lower floor, the formation condition with respect to the auxiliary patterns of master pattern is set;
Determine auxiliary patterns with described formation condition; And
Generation comprises the data of the mask pattern of described master pattern and determined auxiliary patterns.
10. method for the manufacture of mask, the method comprises:
Generate the data of mask pattern by each described method in 8 according to claim 1; And
Data with the mask pattern that generates are made mask.
11. an exposure sources, this exposure sources use the mask of making by method according to claim 10 to come substrate is exposed.
12. the method for the manufacture of device, the method comprises:
Use exposure sources according to claim 11 that substrate is exposed; And
Substrate after the exposure is developed.
13. one kind is used for generating the system that will be used for the mask pattern of exposure sources, this exposure sources exposes by irradiation mask image to mask pattern on substrate, and this system comprises:
Be configured to the unit for the data of the pattern of the lower floor that obtains to be formed on the data of the master pattern on the substrate and the layer that master pattern will be transferred to;
Be configured to the data be used to the pattern that uses described lower floor, setting is with respect to the unit of the formation condition of the auxiliary patterns of master pattern;
Be configured to for the unit of determining auxiliary patterns with described formation condition; And
Be configured to comprise for generation the unit of data of the mask pattern of described master pattern and determined auxiliary patterns.
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| JP2012-085723 | 2012-04-04 | ||
| JP2012085723A JP5677356B2 (en) | 2012-04-04 | 2012-04-04 | Generation method of mask pattern |
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| CN103365072B CN103365072B (en) | 2016-09-14 |
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| JP (1) | JP5677356B2 (en) |
| KR (1) | KR101618405B1 (en) |
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| CN110476121A (en) * | 2017-03-31 | 2019-11-19 | 株式会社尼康 | Pattern computing device, pattern calculation method, mask, exposure device, manufacturing method, computer program and record media |
| CN113219783A (en) * | 2020-01-21 | 2021-08-06 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method, related device and mask plate |
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| JP5627394B2 (en) * | 2010-10-29 | 2014-11-19 | キヤノン株式会社 | Program for determining mask data and exposure conditions, determination method, mask manufacturing method, exposure method, and device manufacturing method |
| JP6324044B2 (en) * | 2013-12-03 | 2018-05-16 | キヤノン株式会社 | Cell pattern creation method, mask pattern creation method, program, information processing apparatus, and mask manufacturing method |
| KR102305092B1 (en) | 2014-07-16 | 2021-09-24 | 삼성전자주식회사 | Mask for photolithography and method for fabricating the same |
| CN109003248B (en) * | 2018-07-23 | 2020-12-08 | 中国石油大学(华东) | Characterization method of fine-grain sedimentary rock stratum structure |
| JP2022523747A (en) * | 2019-01-30 | 2022-04-26 | 深▲せん▼晶源信息技術有限公司 | Photoetching mask optimization method, equipment and electronic equipment for graphic image combination optimization |
| USD956495S1 (en) * | 2019-12-26 | 2022-07-05 | Zhejiang Prulde Electric Appliance Co., Ltd. | Glue gun |
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Also Published As
| Publication number | Publication date |
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| CN103365072B (en) | 2016-09-14 |
| KR101618405B1 (en) | 2016-05-04 |
| JP5677356B2 (en) | 2015-02-25 |
| KR20130112785A (en) | 2013-10-14 |
| TW201342101A (en) | 2013-10-16 |
| US20130266893A1 (en) | 2013-10-10 |
| JP2013217969A (en) | 2013-10-24 |
| US8986912B2 (en) | 2015-03-24 |
| TWI539312B (en) | 2016-06-21 |
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