CN103354210B - 一种键合方法及采用该键合方法形成的键合结构 - Google Patents

一种键合方法及采用该键合方法形成的键合结构 Download PDF

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CN103354210B
CN103354210B CN201310263865.2A CN201310263865A CN103354210B CN 103354210 B CN103354210 B CN 103354210B CN 201310263865 A CN201310263865 A CN 201310263865A CN 103354210 B CN103354210 B CN 103354210B
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bonding
bonding structure
mutually nested
bonded
salient point
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CN103354210A (zh
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蔡坚
刘子玉
王谦
王水弟
胡杨
陈瑜
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Tsinghua University
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Tsinghua University
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Priority to PCT/CN2014/071483 priority patent/WO2014206086A1/zh
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Abstract

本发明针对现有键合方法都存在温度高、压力大且表面改性成本高等问题，提供一种键合方法及采用该键合方法形成的键合结构，其能够克服这些缺陷且能够在常温低压下进行晶圆级键合，该键合方法包括：生成能够相互嵌套的键合结构，其中所述能够相互嵌套的键合结构之间的摩擦热大于它们之间的键合能；以及利用所述能够相互嵌套的键合结构之间的摩擦热来键合所述能够相互嵌套的键合结构。

Description

一种键合方法及采用该键合方法形成的键合结构
技术领域
本发明涉及半导体制造领域，尤其涉及一种键合方法及采用该键合方法形成的键合结构。
背景技术
目前，铜铜键合的主要方法有热超声键合、热压键合以及表面改性等键合方法，但是这些键合方法都存在温度高、压力大且表面改性成本高等问题。过高的温度和压力使得半导体制造工艺无法实现带有器件的晶圆的键合，也无法完成较薄芯片键合。
发明内容
本发明针对现有铜铜键合方法的上述缺陷，提供一种能够克服这些缺陷的键合方法及采用该键合方法形成的键合结构。
本发明提供一种键合方法，该键合方法包括：
生成能够相互嵌套的键合结构，其中所述能够相互嵌套的键合结构之间的摩擦热大于它们之间的键合能；以及
利用所述能够相互嵌套的键合结构之间的摩擦热来键合所述能够相互嵌套的键合结构。
本发明还提供一种采用上述键合方法所形成的键合结构。
由于根据本发明的键合方法和键合结构利用能够相互嵌套的键合结构之间的摩擦热大于它们之间的键合能的特性来进行键合，所以能够实现在常温、低压下进行键合。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是根据本发明的键合方法的流程图；
图2a、3a、4a、5a和6a是能够相互嵌套的示例性键合结构的俯视图；
图2b、3b、4b、5b和6b是分别从图2a、3a、4a、5a和6a中的粗箭头方向看过去的剖面图；
图7a-7g示出了生成能够相互嵌套的键合结构的示例性流程图；以及
图8示出了键合剖面是斜面的能够相互键合的示例性键合结构。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图1所示，根据本发明的键合方法可以包括以下步骤：
S11、生成能够相互嵌套的键合结构，其中所述能够相互嵌套的键合结构之间的摩擦热大于它们之间的键合能。
能够相互嵌套的键合结构的类型可以如图2-6所示，其中，图2a、3a、4a、5a和6a是能够相互嵌套的示例性键合结构的俯视图，图2b、3b、4b、5b和6b是分别从图2a、3a、4a、5a和6a中的粗箭头方向看过去的剖面图。但是本领域技术人员应当理解的是，在实际应用中，其他能够相互嵌套的键合结构也是可行的，图2-6仅是示例，也即，本发明并不对键合结构的具体形状、大小以及键合结构中的凸点形状、大小等进行限制，只要键合结构能够相互嵌套并且是利用键合结构的摩擦热大于它们之间的键合能的原理来实现键合，则其就位于本发明的保护范围之内。而且，如图8所示的键合剖面是斜面的、能够相互嵌套的键合结构也位于本发明的保护范围之内，这种斜面型的键合剖面可以是因工艺等原因而形成的，当然也可以是人为制成的，而且这种斜面型的键合结构能够使得键合更容易完成。
S12、利用所述能够相互嵌套的键合结构之间的摩擦热来键合所述能够相互嵌套的键合结构。
优选地，步骤S11中，生成能够相互嵌套的键合结构可以包括：在衬底上生成第一凸点下金属层图案；在所述第一凸点下金属层图案上形成第二凸点下金属层图案；以及在所述第二凸点下金属层图案上形成凸点，从而形成所述能够相互嵌套的键合结构，其中，在将所述能够相互嵌套的键合结构进行键合时，所述凸点能够与所述第一凸点下金属层图案进行键合。
优选地，所述凸点与所述第一凸点下金属层图案通过加压热退火处理进行键合。
优选地，所述第一凸点下金属层图案由位于所述衬底上的粘附层和位于所述粘附层上的种子层构成。优选地，所述粘附层由能够与所述衬底（例如硅衬底、二氧化硅衬底等）粘附的金属构成，例如可以是由TiN、TiW、Ti、Cr、Ta、Mo、Co等中的至少一者形成。优选地，所述种子层也由金属构成，例如可由铜、金、镍等金属形成。
另外，所述凸点也可由金属构成。
图7a-7g示出了生成能够相互嵌套的键合结构的示例性流程图，但是本领域技术人员应当理解的是，这仅是示例，半导体领域中任何能够形成能够相互嵌套的键合结构的方法和工艺都是可行的，包括半导体CMOS制备工艺、双极制备工艺中的任何工艺处理方法。
首先，如图7a所示，在衬底1上溅射第一粘附层2和第一种子层3作为凸点下金属层（UBM），并利用掩膜技术对第一粘附层2和第一种子层3进行光刻，从而形成图7a所示的图案，其中第一粘附层2多采用TiN、TiW和Ti中的至少一者形成，而第一种子层3多采用Cu形成。
然后，如图7b所示，溅射第二凸点下金属层，该第二凸点下金属层可由第二粘附层4和第二种子层5构成。
之后，如图7c所示，在第二凸点下金属层上形成掩膜层6，并光刻该掩膜层6以形成用于随后形成凸点的区域。
然后，如图7d所示，形成凸点7，该凸点7可通过电镀、溅射等方法形成。然后，如图7e所示，去除掩模层6。然后，刻蚀第二凸点下金属层得到如图7f所示的图案。最后，在倒装焊设备上完成键合，如图7g所示。
因此，通过利用凸点的摩擦热大于凸点的键合能，能够在键合过程中只需要施加很小的力（该力只需要大于凸点与凸点之间的摩擦力就可以了）就能够实现凸点-凸点界面之间的键合。为了消除应力同时增加键合界面的强度，在图7g的步骤中，在主要通过利用凸点侧壁摩擦产热和机械嵌套进行键合之后还在100℃下退火30分钟。另外，如果不形成第一粘附层2和第一种子层3，则凸点7的顶部无法完成键合，因此为了提高可靠性，优选形成第一粘附层2和第一种子层3并在凸点7的侧壁键合完成之后进一步通过热压键合机理完成凸点7顶部的键合，即在凸点7的侧壁键合结束后进行加压热退火处理促使凸点7的顶部与第一种子层3键合。但是根据本发明的方法并不要求必须形成第一种子层3和第一粘附层2。
根据本发明的键合方法的键合原理如下：
根据最大静摩擦力公式：f=μ×N，其中μ为最大静摩擦系数（以凸点7为铜为例，铜铜之间的静摩擦系数是1.6（请参阅美国C·基特尔等著的《伯克利物理学教程》第一卷《力学》上的表格3.1的记载）），N是正压力，而且N=τ×S，其中τ是凸点的最大临界剪切应力，（以铜凸点为例，铜的理论最大临界剪切力是1500MPa，但实际值远小于该值），S是凸点侧向的受力面积。摩擦产生的热为W=f×H=μ×N×H=μ×τ×S×H，其中W为摩擦产生热量，f为最大静摩擦力，H是凸点的高度。以图2a和2b所示的能够相互嵌套的键合结构为例，单位面积的摩擦热可表示为：
W s = W ( L - 2 × L 1 ) × H = f × H ( L - 2 × L 1 ) × H = μ × τ × ( ( L - 2 × L 1 ) × L 1 ) × H ( L - 2 × L 1 ) × H = μ × τ × L 1
如果单位面积的摩擦热大于凸点的键合能，那么就能够在不需要外加热的情况下完成键合。以凸点7是金属铜为例，铜的键合能为3J/m2，因此只要L1在微米级，就都可以实现键合，同时所需要的压力只需大于最大静摩擦力。当凸点7在L为6μm时计算得到摩擦力远远小于1牛顿，因此所需的压力就非常小，也就是说明只要稍施加力键合就可以完成。因此本发明的键合方法可以实现常温、低压下晶圆级凸点键合。
本发明还提供一种采用上述的键合方法所形成的键合结构。由于上面已经结合根据本发明的键合方法对能够相互嵌套的示例性键合结构进行了详细描述，所以此处不再赘述。而且根据本发明的键合方法不仅可以应用圆片级键合，而且还可以应用芯片级和系统级键合。
虽然本发明已通过上述实施例所公开，然而上述实施例并非用以限定本发明，任何本发明所属技术领域中技术人员，在不脱离本发明的精神和范围内，应当可以作各种的变动与修改。因此本发明的保护范围应当以所附权利要求书所界定的范围为准。

Claims (11)

1.一种键合方法，该键合方法包括：
生成能够相互嵌套的键合结构，其中所述能够相互嵌套的键合结构之间的摩擦热大于它们之间的键合能；以及
利用所述能够相互嵌套的键合结构之间的摩擦热来键合所述能够相互嵌套的键合结构。
2.根据权利要求1所述的方法，其中，生成能够相互嵌套的键合结构包括：
在衬底上生成第一凸点下金属层图案；
在所述第一凸点下金属层图案上形成第二凸点下金属层图案；以及
在所述第二凸点下金属层图案上形成凸点，从而形成所述能够相互嵌套的键合结构，其中，在将所述能够相互嵌套的键合结构进行键合时，所述凸点能够与所述第一凸点下金属层图案进行键合。
3.根据权利要求2所述的方法，其中，所述凸点与所述第一凸点下金属层图案通过加低压及热退火处理完成最终键合。
4.根据权利要求2或3所述的方法，其中，所述第一凸点下金属层图案由位于所述衬底上的粘附层和位于所述粘附层上的种子层构成。
5.根据权利要求4所述的方法，其中，所述粘附层由能够与所述衬底粘附的金属构成。
6.根据权利要求5所述的方法，其中，所述粘附层由TiN、TiW、Ti、Cr、Ta、Mo、Co中的至少一者构成。
7.根据权利要求4所述的方法，其中，所述种子层由金属构成。
8.根据权利要求7所述的方法，其中，所述种子层由铜构成。
9.根据权利要求2、3和5-8中任一权利要求所述的方法，其中，所述凸点由金属构成。
10.根据权利要求1-3和5-8中任一项权利要求所述的方法，其中，所述能够相互嵌套的键合结构中的键合剖面是斜面。
11.一种采用权利要求1-10中任一项权利要求所述的方法形成的键合结构。
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