WO2013134054A4 - 3d packaging with low-force thermocompression bonding of oxidizable materials - Google Patents

3d packaging with low-force thermocompression bonding of oxidizable materials Download PDF

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Publication number
WO2013134054A4
WO2013134054A4 PCT/US2013/028530 US2013028530W WO2013134054A4 WO 2013134054 A4 WO2013134054 A4 WO 2013134054A4 US 2013028530 W US2013028530 W US 2013028530W WO 2013134054 A4 WO2013134054 A4 WO 2013134054A4
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WIPO (PCT)
Prior art keywords
contacting
metallizations
contacting metallizations
bumps
metallization
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PCT/US2013/028530
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French (fr)
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WO2013134054A1 (en
Inventor
Eric Schulte
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Set North America, Llc
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Publication of WO2013134054A1 publication Critical patent/WO2013134054A1/en
Publication of WO2013134054A4 publication Critical patent/WO2013134054A4/en

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Abstract

Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically- increasing resistance to compression helps to regulate the degree of thermocompression.

Claims

87 AMENDED CLAIMS received by the International Bureau on 17 September 2013 (17.09.2013)
1. A method for bonding microelectronic elements, comprising the steps of:
a) directing plasma-activated radical-enriched gas flow at substantially atmospheric pressure both to first contacting metallizations on a first element and also to second contacting metallizations on a second element, thereby both reducing native oxides from said contacting metallizations and also passivating said contacting metallizations against re-oxidation; b) compressing said first and second contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
c) repeating said steps a) and b), thereby bonding contacting metallizations on subsequent elements to contacting metallizations on the previous element.
2. The method of Claim 1, wherein said second element has contacting
metallizations both on a first side and also on a second side.
3. The method of Claim 1, wherein said directing step moves said plasma-activated radical-enriched gas flow across contacting metallizations on each said element.
4. The method of Claim 1, wherein said directing step reduces native oxides from said contacting metallizations and passivates said contacting metallizations against re-oxidation simultaneously.
5. The method of Claim 1, wherein said first contacting metallizations are
contacting metallization pads, and said second contacting metallizations are contacting metallization bumps.
6. The method of Claim 1, wherein said compressing step deforms said second
contacting metallizations, but does not substantially deform said first contacting metallizations. 88
7. The method of Claim 1, wherein said contacting metallizations are identical.
8. The method of Claim 1, wherein said first contacting metallizations are
contacting metallization bumps.
9. The method of Claim 1, wherein said first contacting metallizations are
contacting metallization pads.
10. The method of Claim 1, wherein said first contacting metallizations are
contacting metallization pillars.
11. The method of Claim 1, wherein said first and second contacting metallizations have differing metallic compositions.
12. The method of Claim 1, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has contacting metallizations.
13. The method of Claim 1, wherein said compressing step is performed at a
temperature which is below the melting points of said contacting
metallizations.
14. The method of Claim 1, wherein said compressing step is performed at room temperature.
15. The method of Claim 1, wherein said compressing step compresses said
contacting metallizations by no more than 40% of the initial heights of said contacting metallizations.
16. The method of Claim 1, wherein said compressing step compresses said
contacting metallizations by no more than 30% of the initial heights of said contacting metallizations. 89
17. The method of Claim 1, wherein the reducing and passivating steps occur sequentially for each surface.
18. The method of Claim 1, further comprising heating said elements during said compressing step.
19. The method of Claim 1, wherein said first contacting metallizations are
comprised of at least 80% atomic indium.
20. The method of Claim 1, wherein said first contacting metallizations are
comprised of at least 90% atomic tin.
21. The method of Claim 1, wherein said first contacting metallizations are made essentially of gold.
22. The method of Claim 1, wherein said first contacting metallizations are made essentially of copper.
23. The method of Claim 1, wherein said first contacting metallizations are made essentially of nickel.
24. The method of Claim 1, wherein said first contacting metallizations are made essentially of silver.
90
25. A method for bonding microelectronic elements, comprising the steps of:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from the surfaces of first contacting metallizations on a first element; passivating the surfaces of said first contacting metallizations against re-oxidation; reducing native oxides from the surfaces of second contacting metallizations on a second element; and passivating the surfaces of said second contacting metallizations against re-oxidation;
b) compressing said first and second contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
c) repeating said steps a) and b), thereby bonding contacting metallizations on subsequent elements to contacting metallizations on the previous element; wherein said step of compressing said first and second contacting metallizations together joins one of said contacting metallizations which is of a first type together with another of said contacting metallizations which is of a second type.
26. The method of Claim 25, wherein said compressing step is performed at a
temperature which is below the melting points of said contacting
metallizations.
27. The method of Claim 25, wherein said compressing step is performed at room temperature. 91
28. The method of Claim 25, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has contacting metallizations.
29. The method of Claim 25, wherein said second element has contacting
metallizations both on a first side and also on a second side.
30. The method of Claim 25, wherein said using step reduces native oxides from said contacting metallizations and also simultaneously passivates said contacting metallizations against re-oxidation.
31. The method of Claim 25, wherein contacting metallizations of said first type are contacting metallization pads, and contacting metallizations of said second type are contacting metallization bumps.
32. The method of Claim 25, wherein said compressing step deforms said second contacting metallizations, but does not substantially deform said first contacting metallizations.
33. The method of Claim 25, wherein contacting metallizations of said first and second types are identical.
34. The method of Claim 25, wherein contacting metallizations of said first type are contacting metallization bumps.
35. The method of Claim 25, wherein contacting metallizations of said first type are contacting metallization pads.
36. The method of Claim 25, wherein contacting metallizations of said first type are contacting metallization pillars. 92
37. The method of Claim 25, wherein contacting metallizations of said first and second types have differing metallic compositions.
38. The method of Claim 25, wherein said compressing step compresses said
contacting metallizations by no more than 40% of the initial heights of said contacting metallizations.
39. The method of Claim 25, wherein said compressing step compresses said
contacting metallizations by no more than 30% of the initial heights of said contacting metallizations.
40. The method of Claim 25, wherein the reducing and passivating steps occur sequentially for each surface.
41. The method of Claim 25, further comprising heating said elements during said compressing step.
42. The method of Claim 25, wherein contacting metallizations of said first type are comprised of at least 80% atomic indium.
43. The method of Claim 25, wherein contacting metallizations of said first type are comprised of at least 90% atomic tin.
44. The method of Claim 25, wherein contacting metallizations of said first type are made essentially of gold.
45. The method of Claim 25, wherein contacting metallizations of said first type are made essentially of copper.
46. The method of Claim 25, wherein contacting metallizations of said first type are made essentially of nickel. 93
47. The method of Claim 25, wherein contacting metallizations of said first type are made essentially of silver.
48. A method for bonding microelectronic elements, comprising:
forming a plurality of elements respectively having contacting metallizations both on a first side and also on a second side; forming at least one onesided element having contacting metallizations on only one side; a) treating both first contacting metallizations on a first element and second contacting metallizations on a second element with plasma-activated radical-enriched gas flow at substantially atmospheric pressure; wherein said treating step reduces native oxides both from said first and second contacting metallizations, and also inhibits oxide re-formation thereupon; b) aligning and contacting said first and second contacting metallizations, without any conductive liquid phase material, thereby bonding said first and second elements; and
c) repeating said steps a) and b), thereby bonding the contacting metallizations on subsequent elements to the contacting metallizations on the previous element;
wherein said step of contacting said first and second contacting metallizations together joins one of said contacting metallizations which is of a first type together with another of said contacting metallizations which is of a second type; and
repeating said steps a) and b), thereby bonding the contacting metallizations on an element to the contacting metallizations on a one-sided element.
49. The method of Claim 48, wherein said contacting step is performed at room
temperature.
50. The method of Claim 48, wherein said contacting step forms unvoided bond footprints between said contacting metallizations.
51. The method of Claim 48, further comprising heating said elements during said contacting step.
52. The method of Claim 48, wherein said contacting step is performed at a
temperature which is below the melting points of said contacting
metallizations.
53. The method of Claim 48, wherein said contacting step is performed at room temperature.
54. The method of Claim 48, wherein contacting metallizations of said first type are contacting metallization pads, and contacting metallizations of said second type are contacting metallization bumps.
55. The method of Claim 48, wherein said contacting step deforms said second contacting metallizations, but does not substantially deform said first contacting metallizations.
56. The method of Claim 48, wherein contacting metallizations of said first and second types are identical.
57. The method of Claim 48, wherein contacting metallizations of said first type are contacting metallization bumps.
58. The method of Claim 48, wherein contacting metallizations of said first type are contacting metallization pads.
59. The method of Claim 48, wherein contacting metallizations of said first type are contacting metallization pillars.
60. The method of Claim 48, wherein contacting metallizations of said first and second types have differing metallic compositions. 96
61. The method of Claim 48, wherein said contacting step compresses said
contacting metallizations by no more than 40% of the initial heights of said contacting metallizations.
62. The method of Claim 48, wherein said contacting step compresses said
contacting metallizations by no more than 30% of the initial heights of said contacting metallizations.
63. The method of Claim 48, wherein contacting metallizations of said first type are comprised of at least 80% atomic indium.
64. The method of Claim 48, wherein contacting metallizations of said first type are comprised of at least 90% atomic tin.
65. The method of Claim 48, wherein contacting metallizations of said first type are made essentially of gold.
66. The method of Claim 48, wherein contacting metallizations of said first type are made essentially of copper.
67. The method of Claim 48, wherein contacting metallizations of said first type are made essentially of nickel.
68. The method of Claim 48, wherein contacting metallizations of said first type are made essentially of silver. 97
69. A method of bonding microelectronic elements, comprising:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from contacting metallization pads on one side of a first element; and passivating said contacting metallization pads against re-oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from deformable contacting metallization bumps on one side of a second element; and passivating said deformable contacting metallization bumps against re-oxidation; c) compressing said deformable contacting metallization bumps and said contacting metallization pads together, without any conductive liquid phase material; wherein said compressing step compresses said deformable contacting metallization bumps to a final height which is greater than 60% of the initial height of said deformable contacting metallization bumps;
d) repeating said steps a), b), and c), thereby bonding the deformable contacting metallization bumps on subsequent elements to the contacting metallization pads on the previous element.
70. The method of Claim 69, wherein said compressing step compresses said
contacting metallization bumps to a final height which is more than 70% of the initial height of said contacting metallization bumps.
71. The method of Claim 69, wherein said compressing step compresses said
contacting metallization bumps to a final height which is more than 80% of the initial height of said contacting metallization bumps.
72. The method of Claim 69, further comprising the step of bonding an additional element to the previous elements by said steps a), b), and c), wherein one side 98
of said additional element has neither contacting metallization bumps nor contacting metallization pads.
73. The method of Claim 69, wherein said compressing step is performed at a temperature which is below the melting points both of said contacting metallization bumps and also of said contacting metallization pads.
74. The method of Claim 69, wherein said compressing step is performed at room temperature.
75. The method of Claim 69, wherein said second element has contacting
metallization pads on a first side and contacting metallization bumps on a second side.
76. The method of Claim 69, wherein said step a) simultaneously reduces native oxides from said contacting metallization pads and also simultaneously passivates said contacting metallization pads against re-oxidation.
77. The method of Claim 69, wherein said step b) simultaneously reduces native oxides from said contacting metallization pads and also simultaneously passivates said contacting metallization pads against re-oxidation.
78. The method of Claim 69, wherein said compressing step does not substantially deform said contacting metallization pads.
79. The method of Claim 69, wherein said contacting metallization bumps and said contacting metallization pads have differing metallic compositions.
80. The method of Claim 69, wherein said contacting metallization bumps and said contacting metallization pads have identical metallic compositions.
81. The method of Claim 69, further comprising heating said elements during said compressing step. 99
82. The method of Claim 69, wherein said contacting metallization bumps are
comprised of at least 80% atomic indium.
83. The method of Claim 69, wherein said contacting metallization bumps are
comprised of at least 90% atomic tin.
84. The method of Claim 69, wherein said contacting metallization bumps are made essentially of gold.
85. The method of Claim 69, wherein said contacting metallization pads are made essentially of gold.
86. The method of Claim 69, wherein said contacting metallization pads are made essentially of copper.
87. The method of Claim 69, wherein said contacting metallization pads are made essentially of nickel.
88. The method of Claim 69, wherein said contacting metallization pads are made essentially of silver.
100
89. A method of bonding microelectronic elements, comprising:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from first contacting metallization pads on a first element; and passivating said first contacting metallization pads against re-oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from deformable contacting metallization bumps on one side of a second element; passivating said deformable contacting metallization bumps against re-oxidation; reducing native oxides from second contacting metallization pads on the other side of said second element; and passivating said second contacting metallization pads against re-oxidation;
c) compressing said deformable contacting metallization bumps and said first contacting metallization pads together, without any conductive liquid phase material;
d) repeating said steps b) and c), thereby bonding the deformable contacting metallization bumps on subsequent elements to the contacting metallization pads on the previous element.
90. The method of Claim 89, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has contacting metallizations.
91. The method of Claim 89, wherein said compressing step compresses said
contacting metallization bumps to a final height which is more than 70% of the initial height of said contacting metallization bumps. 101
92. The method of Claim 89, wherein said compressing step compresses said
contacting metallization bumps to a final height which is more than 80% of the initial height of said contacting metallization bumps.
93. The method of Claim 89, further comprising the step of bonding an additional element to the previous elements by said steps a), b), and c), wherein one side of said additional element has neither contacting metallization bumps nor contacting metallization pads.
94. The method of Claim 89, wherein said compressing step is performed at a
temperature which is below the melting points both of said contacting metallization bumps and also of said contacting metallization pads.
95. The method of Claim 89, wherein said compressing step is performed at room temperature.
96. The method of Claim 89, wherein said second element has contacting
metallization pads on a first side and contacting metallization bumps on a second side.
97. The method of Claim 89, wherein said step a) simultaneously reduces native oxides from said contacting metallization pads and also simultaneously passivates said contacting metallization pads against re-oxidation.
98. The method of Claim 89, wherein said step b) simultaneously reduces native oxides from said contacting metallization pads and also simultaneously passivates said contacting metallization pads against re-oxidation.
99. The method of Claim 89, wherein said compressing step does not substantially deform said contacting metallization pads. 102
100. The method of Claim 89, wherein said contacting metallization bumps and said contacting metallization pads have differing metallic compositions.
101. The method of Claim 89, wherein said contacting metallization bumps and said contacting metallization pads have identical metallic compositions.
102. The method of Claim 89, further comprising heating said elements during said compressing step.
103. The method of Claim 89, wherein said contacting metallization bumps are comprised of at least 80% atomic indium.
104. The method of Claim 89, wherein said contacting metallization bumps are comprised of at least 90% atomic tin.
105. The method of Claim 89, wherein said contacting metallization bumps are made essentially of gold.
106. The method of Claim 89, wherein said contacting metallization pads are made essentially of gold.
107. The method of Claim 89, wherein said contacting metallization pads are made essentially of copper.
108. The method of Claim 89, wherein said contacting metallization pads are made essentially of nickel.
109. The method of Claim 89, wherein said contacting metallization pads are made essentially of silver. 103
110. A method for bonding microelectronic elements, comprising the steps of:
a) directing plasma-activated radical-enriched gas flow at substantially atmospheric pressure both to first contacting metallizations on a first element and also to second contacting metallizations on a second element, thereby both reducing native oxides from said contacting metallizations and also passivating said contacting metallizations against re-oxidation; b) compressing said first and second contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
c) repeating said steps a) and b), thereby bonding contacting metallizations on subsequent elements to contacting metallizations on the previous element; wherein said plasma-activated radical-enriched gas flow includes a population of helium metastable states.
111. The method of Claim 110, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has contacting metallizations.
112. The method of Claim 110, wherein said second element has contacting
metallizations both on a first side and also on a second side.
113. The method of Claim 110, wherein said directing step moves said plasma- activated radical-enriched gas flow across contacting metallizations on each said element.
114. The method of Claim 110, wherein said directing step reduces native oxides from said contacting metallizations and passivates said contacting
metallizations against re-oxidation simultaneously. 104
115. The method of Claim 110, wherein said first contacting metallizations are
contacting metallization pads, and said second contacting metallizations are contacting metallization bumps.
116. The method of Claim 110, wherein said compressing step deforms said second contacting metallizations, but does not substantially deform said first contacting metallizations.
117. The method of Claim 110, wherein said contacting metallizations are identical.
118. The method of Claim 110, wherein said first contacting metallizations are
contacting metallization bumps.
119. The method of Claim 110, wherein said first contacting metallizations are
contacting metallization pads.
120. The method of Claim 110, wherein said first contacting metallizations are
contacting metallization pillars.
121. The method of Claim 110, wherein said first and second contacting
metallizations have differing metallic compositions.
122. The method of Claim 110, wherein said compressing step is performed at a temperature which is below the melting points of said contacting
metallizations.
123. The method of Claim 110, wherein said compressing step is performed at room temperature.
124. The method of Claim 110, wherein said compressing step compresses said contacting metallizations by no more than 40% of the initial heights of said contacting metallizations. 105
125. The method of Claim 110, wherein said compressing step compresses said contacting metallizations by no more than 30% of the initial heights of said contacting metallizations.
126. The method of Claim 110, wherein the reducing and passivating steps occur sequentially for each surface.
127. The method of Claim 110, further comprising heating said elements during said compressing step.
128. The method of Claim 110, wherein said first contacting metallizations are comprised of at least 80% atomic indium.
129. The method of Claim 110, wherein said first contacting metallizations are comprised of at least 90% atomic tin.
130. The method of Claim 110, wherein said first contacting metallizations are made essentially of gold.
131. The method of Claim 110, wherein said first contacting metallizations are made essentially of copper.
132. The method of Claim 110, wherein said first contacting metallizations are made essentially of nickel.
133. The method of Claim 110, wherein said first contacting metallizations are made essentially of silver. 106
134. A method for bonding microelectronic elements, comprising the steps of:
a) directing plasma-activated radical-enriched gas flow to first contacting metallizations on a first side of a first element, thereby reducing native oxides from said first contacting metallizations and simultaneously inhibiting oxide re-formation thereupon;
b) directing plasma-activated radical-enriched gas flow to second contacting metallizations on a first side of a second element, thereby reducing native oxides from said second contacting metallizations and simultaneously inhibiting oxide re-formation thereupon;
c) compressing said first and second contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
d) repeating said steps a), b), and c), thereby bonding the contacting metallizations on subsequent elements to the contacting metallizations on the previous element;
wherein said step of compressing said first and second contacting metallizations together joins one of said contacting metallizations which is of a first type together with another of said contacting metallizations which is of a second type.
135. The method of Claim 134, wherein said passivating agents are comprised
primarily of nitrogen. 107
136. The method of Claim 134, further comprising the step of bonding an additional element to the previous elements by said steps a), b), and c), wherein only one side of said additional element has contacting metallizations.
137. The method of Claim 134, wherein said compressing step is performed at a temperature which is below the melting point of said metallic bumps.
138. The method of Claim 134, further comprising the step of heating the chips during said compressing step, wherein said heating step does not melt said metallic bumps.
139. The method of Claim 134, wherein said compressing step compresses said metallic bumps by no more than 40% of the initial height of said metallic bumps.
140. The method of Claim 134, wherein said compressing step compresses said metallic bumps by no more than 30% of the initial height of said metallic bumps.
141. The method of Claim 134, wherein said contacting metallizations of said first and second types are identical.
142. The method of Claim 134, wherein at least one of said first and second types are metallic contact pads.
143. The method of Claim 134, wherein at least one of said first and second types are metallic contact bumps.
144. The method of Claim 134, wherein at least one of said first and second types are metallic contact pillars. 108
145. The method of Claim 134, wherein contacting metallizations of said first type are comprised of at least 80% atomic indium.
146. The method of Claim 134, wherein contacting metallizations of said first type are comprised of at least 90% atomic tin.
147. The method of Claim 134, wherein contacting metallizations of said first type are made essentially of gold.
148. The method of Claim 134, wherein contacting metallizations of said first type are made essentially of copper.
149. The method of Claim 134, wherein contacting metallizations of said first type are made essentially of nickel.
150. The method of Claim 134, wherein contacting metallizations of said first type are made essentially of silver.
109
151. A method for bonding microelectronic elements, comprising the steps of:
a) directing plasma-activated radical-enriched gas flow at substantially atmospheric pressure both to first contacting metallizations on a first element and also simultaneously to second contacting metallizations on a second element, thereby both reducing native oxides from said contacting metallizations and also passivating said contacting metallizations against re-oxidation;
b) compressing said first and second contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
c) repeating said steps a) and b), thereby bonding contacting metallizations on subsequent elements to contacting metallizations on the previous element; wherein the metallic compositions of said first and second contacting metallizations are essentially identical.
152. The method of Claim 151, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has contacting metallizations.
153. The method of Claim 151, wherein said second element has contacting
metallizations both on a first side and also on a second side.
154. The method of Claim 151, wherein said directing step moves said plasma- activated radical-enriched gas flow across contacting metallizations on each said element.
155. The method of Claim 151, wherein said directing step reduces native oxides from said contacting metallizations and passivates said contacting
metallizations against re-oxidation simultaneously. 110
156. The method of Claim 151, wherein said first contacting metallizations are
contacting metallization pads, and said second contacting metallizations are contacting metallization bumps.
157. The method of Claim 151, wherein said compressing step deforms said second contacting metallizations, but does not substantially deform said first contacting metallizations.
158. The method of Claim 151, wherein said contacting metallizations are identical.
159. The method of Claim 151, wherein said first contacting metallizations are
contacting metallization bumps.
160. The method of Claim 151, wherein said first contacting metallizations are
contacting metallization pads.
161. The method of Claim 151, wherein said first contacting metallizations are
contacting metallization pillars.
162. The method of Claim 151, wherein said first and second contacting
metallizations have differing metallic compositions.
163. The method of Claim 151, wherein said compressing step is performed at a temperature which is below the melting points of said contacting
metallizations.
164. The method of Claim 151, wherein said compressing step is performed at room temperature.
165. The method of Claim 151, wherein said compressing step compresses said contacting metallizations by no more than 40% of the initial heights of said contacting metallizations. 111
166. The method of Claim 151, wherein said compressing step compresses said contacting metallizations by no more than 30% of the initial heights of said contacting metallizations.
167. The method of Claim 151, wherein the reducing and passivating steps occur sequentially for each surface.
168. The method of Claim 151, further comprising heating said elements during said compressing step.
169. The method of Claim 151, wherein said first contacting metallizations are comprised of at least 80% atomic indium.
170. The method of Claim 151, wherein said first contacting metallizations are comprised of at least 90% atomic tin.
171. The method of Claim 151, wherein said first contacting metallizations are made essentially of gold.
172. The method of Claim 151, wherein said first contacting metallizations are made essentially of copper.
173. The method of Claim 151, wherein said first contacting metallizations are made essentially of nickel.
174. The method of Claim 151, wherein said first contacting metallizations are made essentially of silver. 112
175. A method for bonding microelectronic elements, comprising the steps of:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from the surfaces of contacting metallizations on a first element; and passivating the surfaces of said contacting metallizations against re-oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from the surfaces of indium- based bumps on a second element; and passivating the surfaces of said indium-based bumps against re-oxidation;
c) compressing said indium-based bumps and said contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
d) repeating said steps a), b), and c), thereby bonding the indium-based bumps on subsequent elements to the contacting metallizations on the previous element;
wherein said indium-based bumps are comprised of at least 80% atomic indium.
176. The method of Claim 175, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein one side of said additional element has neither contacting metallizations nor indium- based bumps.
177. The method of Claim 175, wherein said compressing step is performed at a temperature which is below the melting point of said indium-based bumps.
178. The method of Claim 175, wherein said compressing step is performed at room temperature. 113
179. The method of Claim 175, wherein said compressing step is performed at a temperature which is more than 100°C below the melting point of said indium-based bumps.
180. The method of Claim 175, wherein said indium-based bumps are comprised of at most 10% atomic silver.
181. The method of Claim 175, wherein said indium-based bumps are comprised of at most 5% atomic silver.
182. The method of Claim 175, wherein said indium-based bumps are comprised of at least 95% atomic indium.
183. The method of Claim 175, wherein said contacting metallizations are
comprised essentially of nickel.
184. The method of Claim 175, wherein said contacting metallizations are
comprised essentially of silver.
185. The method of Claim 175, wherein said contacting metallizations are
comprised of at least 70% atomic indium.
186. The method of Claim 175, wherein said second element has contacting
metallizations on a first side and indium-based bumps on a second side.
187. The method of Claim 175, wherein said step a) reduces native oxides from said contacting metallizations and also simultaneously passivates said contacting metallizations against re-oxidation.
188. The method of Claim 175, wherein said step b) reduces native oxides from said indium-based bumps and simultaneously passivates said indium-based bumps against re-oxidation. 114
189. The method of Claim 175, wherein said compressing step does not
substantially deform said contacting metallizations.
190. The method of Claim 175, wherein said contacting metallizations are
contacting metallization bumps.
191. The method of Claim 175, wherein said contacting metallizations are
contacting metallization pads.
192. The method of Claim 175, wherein said contacting metallizations are
contacting metallization pillars.
193. The method of Claim 175, wherein said compressing step compresses said indium-based bumps by no more than 40% of the initial heights of said indium-based bumps.
194. The method of Claim 175, wherein said compressing step compresses said indium-based bumps by no more than 30% of the initial heights of said indium-based bumps.
195. The method of Claim 175, further comprising heating said elements during said compressing step.
115
196. A method of bonding microelectronic elements, comprising the steps of:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from contact metallizations on a first element; and passivating said contact metallizations against re- oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from tin-based bumps on a second element; and passivating said tin-based bumps against re- oxidation;
c) compressing said tin-based bumps and said contact metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
d) repeating said steps a), b), and c), thereby bonding the tin-based bumps on subsequent elements to the contact metallizations on the previous element; wherein said tin-based bumps are comprised of at least 90% atomic tin.
197. The method of Claim 196, further comprising the step of bonding an additional element to the previous elements by said steps a), b), and c), wherein one side of said additional element has neither contacting metallizations nor tin-based bumps.
198. The method of Claim 196, wherein said tin-based bumps are comprised of at least 95% atomic tin.
199. The method of Claim 196, wherein said tin-based bumps are comprised of at least 2% atomic silver.
200. The method of Claim 196, wherein said tin-based bumps are comprised of at least 3% atomic silver and at least 0.5% atomic copper. 116
201. The method of Claim 196, wherein said compressing step is performed at room temperature.
202. The method of Claim 196, wherein said tin-based bumps are comprised of at most 10% atomic silver.
203. The method of Claim 196, wherein said tin-based bumps are comprised of at most 5% atomic silver.
204. The method of Claim 196, wherein said tin-based bumps are comprised of at least 95% atomic tin.
205. The method of Claim 196, wherein said contacting metallizations are
comprised essentially of nickel.
206. The method of Claim 196, wherein said contacting metallizations are
comprised essentially of silver.
207. The method of Claim 196, wherein said contacting metallizations are
comprised of at least 90% atomic tin.
208. The method of Claim 196, wherein said second element has contacting
metallizations on a first side and tom-based bumps on a second side.
209. The method of Claim 196, wherein said step a) reduces native oxides from said contacting metallizations and also simultaneously passivates said contacting metallizations against re-oxidation.
210. The method of Claim 196, wherein said step b) reduces native oxides from said tin-based bumps and then passivates said tin-based bumps against re- oxidation. 117
211. The method of Claim 196, wherein said compressing step does not
substantially deform said contacting metallizations.
212. The method of Claim 196, wherein said contacting metallizations are
contacting metallization bumps.
213. The method of Claim 196, wherein said contacting metallizations are
contacting metallization pads.
214. The method of Claim 196, wherein said contacting metallizations are
contacting metallization pillars.
215. The method of Claim 196, wherein said compressing step compresses said tin- based bumps by no more than 40% of the initial heights of said tin-based bumps.
216. The method of Claim 196, wherein said compressing step compresses said tin- based bumps by no more than 30% of the initial heights of said tin-based bumps.
217. The method of Claim 196, further comprising heating said elements during said compressing step.
118
218. A method for bonding microelectronic elements, comprising the steps of:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from the surfaces of first copper- based contacting metallizations on a first side of a first element; and passivating the surfaces of said first copper-based contact metallizations against re-oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from the surfaces of second copper-based contacting metallizations on a second element; and passivating the surfaces of said second copper-based contacting metallizations against re-oxidation;
c) compressing said first and second copper-based contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
d) repeating said steps a), b), and c), thereby bonding copper-based contacting metallizations on subsequent elements to copper-based contacting metallizations on the previous element.
219. The method of Claim 218, wherein said copper-based contacting metallizations are composed of pure copper.
220. The method of Claim 218, wherein said reducing steps are performed in a
reduction-only atmosphere.
221. The method of Claim 218, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has copper-based contacting metallizations.
222. The method of Claim 218, wherein said compressing step is performed at a temperature of approximately 300°C. 119
223. The method of Claim 218, wherein said second element has copper-based
contacting metallizations both on a first side and also on a second side.
224. The method of Claim 218, wherein said copper-based contacting metallizations are copper-based contacting metallization bumps.
225. The method of Claim 218, wherein said copper-based contacting metallizations are copper-based contacting metallization pads.
226. The method of Claim 218, wherein said copper-based contacting metallizations are copper-based contacting metallization pillars.
227. The method of Claim 218, wherein said compressing step compresses said copper-based contacting metallizations by no more than 40% of the initial heights of said copper-based contacting metallizations.
228. The method of Claim 218, wherein said compressing step compresses said copper-based contacting metallizations by no more than 30% of the initial heights of said copper-based contacting metallizations.
229. The method of Claim 218, further comprising heating said elements during said compressing step.
120
230. A method for bonding microelectronic elements, comprising the steps of:
a) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from first gold contacting metallizations on a first element; and passivating said first gold contacting metallizations against re-oxidation;
b) using plasma-activated radical-enriched gas flow at substantially atmospheric pressure: thereby reducing native oxides from second gold contacting metallizations on a first side of a second element; and passivating said second gold contacting metallizations against re-oxidation;
c) compressing said first and second gold contacting metallizations together, without any conductive liquid phase material, thereby bonding said second element to said first element;
d) repeating said steps a), b), and c), thereby bonding gold contacting metallizations on subsequent elements to gold contacting metallizations on the previous element.
231. The method of Claim 230, further comprising the step of bonding an additional element to the previous elements by said steps a) and b), wherein only one side of said additional element has gold contacting metallizations.
232. The method of Claim 230, wherein said compressing step is performed at a temperature which is below 200°C.
233. The method of Claim 230, wherein said compressing step is performed at a temperature which is below 150°C.
234. The method of Claim 230, wherein said steps a) and b) are performed
simultaneously.
235. The method of Claim 230, wherein said gold contacting metallizations are gold bumps. 121
236. The method of Claim 230, wherein said gold contacting metallizations are gold pads.
237. The method of Claim 230, wherein said first gold contacting metallizations are gold pads and said second gold contacting metallizations are gold bumps.
238. The method of Claim 230, wherein said gold contacting metallizations are evaporated gold.
239. The method of Claim 230, wherein said gold contacting metallizations are sputtered gold.
240. The method of Claim 230, wherein said gold contacting metallizations are electroplated gold.
241. The method of Claim 230, wherein said gold contacting metallizations are electroless plated gold.
242. The method of Claim 230, wherein said second element has gold contacting metallizations both on a first side and also on a second side.
243. The method of Claim 230, wherein said gold contacting metallizations are gold contacting metallization bumps.
244. The method of Claim 230, wherein said gold contacting metallizations are gold contacting metallization pads.
245. The method of Claim 230, wherein said gold contacting metallizations are gold contacting metallization pillars.
246. The method of Claim 230, wherein said compressing step compresses said gold contacting metallizations by no more than 40% of the initial heights of said gold contacting metallizations. 122
247. The method of Claim 230, wherein said compressing step compresses said gold contacting metallizations by no more than 30% of the initial heights of said gold contacting metallizations.
248. The method of Claim 230, further comprising heating said elements during said compressing step.
123
249. A system for bonding microelectronic elements, comprising:
a bonding platform for flip-chip bonding, configured to bond elements by compressing them together, without any conductive liquid phase material, thereby deforming contacting metallizations by no more than 40% of their initial height;
an atmospheric plasma applicator, integrated into said bonding platform, which is configured to apply reducing and passivating agents to said contacting metallizations on each said element, by use of plasma-activated radical- enriched gas flow at substantially atmospheric pressure;
wherein said reducing and passivating agents reduce native oxides from said contacting metallizations and passivate said contacting metallizations against re-oxidation prior to bonding said element;
wherein elements are loaded into said bonding platform and aligned for bonding, said atmospheric plasma applicator applies reducing and passivation agents to the contacting metallizations on said elements, and then the elements are bonded.
250. The system of Claim 249, wherein said contacting metallizations are deformed by no more than 30% of their initial height.
251. The system of Claim 249, wherein said atmospheric plasma applicator
comprises a scanning plasma applicator nozzle.
252. The system used to perform the method of Claims 1, 25, 48, 69, 89, 110, 134,
151, 175, 196, 218, or 230.
253. The device made by the method of Claims 1, 25, 48, 69, 89, 110, 134, 151, 175, 196, 218, or 230. 124
254. The method of Claim 1, further comprising subsequently exposing said elements to room air.
255. The method of Claim 25, further comprising subsequently exposing said elements to room air.
256. The method of Claim 48, further comprising subsequently exposing said elements to room air.
257. The method of Claim 69, further comprising subsequently exposing said elements to room air.
258. The method of Claim 89, further comprising subsequently exposing said elements to room air.
259. The method of Claim 110, further comprising subsequently exposing said elements to room air.
260. The method of Claim 134, further comprising subsequently exposing said elements to room air.
261. The method of Claim 151, further comprising subsequently exposing said elements to room air.
262. The method of Claim 175, further comprising subsequently exposing said elements to room air.
263. The method of Claim 196, further comprising subsequently exposing said elements to room air.
264. The method of Claim 218, further comprising subsequently exposing said elements to room air. 125 he method of Claim 230, further comprising subsequently exposing said elements to room air.

126

STATEMENT UNDER ARTICLE 19(1)

None of the references show anything like "passivatmg. . . against re-oxidation", and the limitation is not addressed in the Written Opinion; the present amendments are intended to make quite certain that all limitations are clearly disclosed.

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