CN103325892A - Method for manufacturing light emitting diode chip - Google Patents
Method for manufacturing light emitting diode chip Download PDFInfo
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- CN103325892A CN103325892A CN2013101922774A CN201310192277A CN103325892A CN 103325892 A CN103325892 A CN 103325892A CN 2013101922774 A CN2013101922774 A CN 2013101922774A CN 201310192277 A CN201310192277 A CN 201310192277A CN 103325892 A CN103325892 A CN 103325892A
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Abstract
The invention provides a method for manufacturing a light emitting diode chip. The method at least comprises the following steps that a substrate is provided, Mesa etching is conducted on the substrate to form a concave region, and the bottom of concave region reaches an N type semiconductor layer; then the sputtering method is utilized to form an ITO transparent conducting layer in a P type semiconductor layer; then a P electrode is formed on an upper-portion region of the ITO transparent conducting layer, and an N electrode is formed on an upper-portion region of the N type semiconductor layer of the concave region; the bottom of the P electrode is made of a Cr material, then annealing is conducted to make the Cr at the bottom of the P electrode combine with O in the ITO transparent conducting layer to form oxide. According to the method, the sputtering method is utilized to form the ITO transparent conducting layer and improve the brightness of the light emitting diode chip, high-temperature annealing is utilized to make the Cr at the bottom of the P electrode combine with O in the ITO transparent conducting layer to form the Cr oxide, chemical bonds are combined between the P electrode and the ITO transparent conducting layer, the adhesivity is greatly enhanced, and therefore the problem that a metal electrode falls off is solved.
Description
Technical field
The invention belongs to the light emitting semiconductor device field, relate to a kind of manufacture method of light-emitting diode chip for backlight unit.
Background technology
Light-emitting diode (Light Emitting Diode, LED) have that volume is little, efficient is high and an advantage such as the life-span is long, have a wide range of applications in fields such as traffic indication, outdoor panchromatic demonstrations, especially LED with its excellent performance by industry generally believe be the 4th generation light source ideal chose, led light source all is better than the conventional light source such as incandescent lamp, fluorescent lamp at aspects such as luminous efficiency, useful life, response time, environmental protection.
Ito thin film is a kind of N-shaped semiconductor of high degeneracy, free carrier is mainly derived from Sn to instead type replacement and the oxygen room of In, in lattice, can provide a free electron to enter conduction band behind the position of each Sn replacement In, the oxygen room also provides electronics as the alms giver simultaneously, therefore, film generally has higher carrier concentration and lower resistivity, and electric conductivity can be compared with metallic conductor.The energy gap of ito thin film is about 3.85 eV, and generally more than 85%, the simultaneously reflection of infrared region (1.2 pm) also can surpass 90%, and microwave is had obvious abated effect in the visible light wave range transmitance.Because its good conductivity and light transmission are widely used on the led chip transparent electrode thin film.
The technology of preparation ito thin film commonly used has sputtering method (sputter) and vacuum electronic vapour deposition method (E-gun) etc., and the technological parameter in the performance of ito thin film and preparation method and the preparation process is closely related, and can improve its photoelectric properties by post-processed.
All be to make ito thin film with the vacuum electronic vapour deposition method in the at present led chip manufacturing, be called for short E-gun ITO.But for the further LED device performance that improves, and then research is made ito thin film with sputtering method.Because the ito thin film crystallization degree that sputtering method is made is more complete, can greatly reduce light in film is propagated because the light of crystal boundary scattering loss, thereby improved the light extraction efficiency of led chip, but the relative vapour deposition method of the film evenness of making like this improves very large, greatly slacken with the adhesiveness of metal electrode, so have obscission between present sputter ITO and the metal electrode.
So, how guarantee that not coming off of metal electrode is urgent problem when transparency electrode promotes chip brightness utilizing sputter ITO to do.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind of manufacture method of light-emitting diode chip for backlight unit, is used for solving the problem that ITO that the prior art metal electrode easily forms from sputtering method comes off.
Reach for achieving the above object other relevant purposes, the invention provides a kind of manufacture method of light-emitting diode chip for backlight unit, the manufacture method of described light-emitting diode chip for backlight unit may further comprise the steps at least:
1) provide a substrate, described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively;
2) described substrate is carried out partial etching, form a sunk area in described substrate, described sunk area bottom arrives in the described n type semiconductor layer;
3) adopt sputtering method to form an ITO transparency conducting layer at described p type semiconductor layer;
4) subregion forms the P electrode on described ITO transparency conducting layer, and the subregion forms the N electrode on the n type semiconductor layer of described sunk area; Described P electrode base material is Cr;
5) anneal so that the O of Cr with the ITO transparency conducting layer in of P electrode bottom is combined the formation oxide.
Alternatively, the annealing region in the described step 5) is 300 ~ 650 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.
The thickness range of the ITO transparency conducting layer that forms in the described step 3) alternatively, is 300 ~ 2500 dusts.
Alternatively, the ITO transparency conducting layer that forms in the described step 3) at the light transmittance of 460nm wave band more than or equal to 99.5%.
The crystalline texture of the ITO transparency conducting layer that forms in the described step 3) alternatively, is sheet.
The square resistance scope of the ITO transparency conducting layer that forms in the described step 3) alternatively, is 15 ~ 20 Ω.
Alternatively, described P electrode is the Cr/Pt/Au three-decker.
Alternatively, described P electrode, N electrode adopt vacuum electronic to steam to cross legal system standby.
As mentioned above, the manufacture method of light-emitting diode chip for backlight unit of the present invention, has following beneficial effect: utilize sputtering method to form the brightness that the ITO transparency conducting layer promotes light-emitting diode chip for backlight unit, utilize high annealing simultaneously and form the Cr oxide so that the O of Cr in the ITO transparency conducting layer of P electrode bottom is combined, the combination of chemical bond has been arranged between P electrode and the ITO transparency conducting layer, adhesiveness strengthens greatly, thereby has solved the problem that metal electrode comes off.
Description of drawings
Fig. 1 is shown as the generalized section of substrate in the manufacture method of light-emitting diode chip for backlight unit of the present invention.
Fig. 2 is shown as the schematic diagram that forms sunk area in the manufacture method of light-emitting diode chip for backlight unit of the present invention in substrate.
Fig. 3 is shown as and adopts sputtering method to form the schematic diagram of ITO transparency conducting layer at p type semiconductor layer in the manufacture method of light-emitting diode chip for backlight unit of the present invention.
Fig. 4 is shown as the shape appearance figure that adopts the ITO transparency conducting layer that sputtering method forms in the manufacture method of light-emitting diode chip for backlight unit of the present invention.
Fig. 5 is shown as the schematic diagram that forms P electrode and N electrode in the manufacture method of light-emitting diode chip for backlight unit of the present invention.
The element numbers explanation
1 substrate
11 substrates
The 12N type semiconductor layer
13 luminescent layers
The 14P type semiconductor layer
15 sunk areas
The 2ITO transparency conducting layer
The 3P electrode
The 4N electrode
31,41Cr metal level
32,42Pt metal level
33,43Au metal level
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 to Fig. 5.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
The invention provides a kind of manufacture method of light-emitting diode chip for backlight unit, the manufacture method of described light-emitting diode chip for backlight unit may further comprise the steps at least:
Step 1) sees also Fig. 1, and a substrate 1 is provided, and described substrate comprises substrate 11, n type semiconductor layer 12, luminescent layer 13 and p type semiconductor layer 14 from bottom to top successively;
Concrete, described substrate 11 can be Sapphire Substrate, also can be other Semiconductor substrate, for example silicon substrate or SOI.Described n type semiconductor layer 12 is the N-GaN layer, and described luminescent layer 13 is multiple quantum trap, and its material can be the GaN that In mixes, and described p type semiconductor layer 14 is the P-GaN layer.
Step 2), see also Fig. 2, described substrate 1 is carried out partial etching, form a sunk area 15 in described substrate 1, described sunk area 15 bottoms arrive in the described n type semiconductor layer 12;
Concrete, adopt conventional MESA(platform) be etched in the described sunk area 15 of formation in the described substrate 1, described n type semiconductor layer 12 parts are etched away.
Step 3) sees also Fig. 3, adopts sputtering method to form an ITO transparency conducting layer 2 at described p type semiconductor layer 14;
Concrete, described ITO transparency conducting layer 2 also comprises the transparency electrode etching of routine usually as transparency electrode after the described ITO transparency conducting layer 2 of deposition, and this is the common practise of this area, repeats no more herein.
In the present embodiment, adopting the thickness range of the described ITO transparency conducting layer 2 that sputtering method forms at described p type semiconductor layer 14 is 300 ~ 2500 dusts, and more than or equal to 99.5%, crystalline texture is sheet at the light transmittance of 460nm wave band for it.The square resistance scope of described ITO transparency conducting layer 2 is 15 ~ 20 Ω.
See also Fig. 4, be shown as the shape appearance figure of the ITO transparency conducting layer 2 that adopts sputtering method formation in the present embodiment, the crystalline texture that can find out described ITO transparency conducting layer 2 is sheet.
Adopt sputtering method to form described ITO transparency conducting layer 2 in this step, the crystallization degree of the ITO transparency conducting layer 2 that forms by the method is more complete, can greatly reduce light light owing to the crystal boundary scattering loss in ITO electrically conducting transparent Es-region propagations, thereby improve the light extraction efficiency of the light-emitting diode chip for backlight unit of producing.
Step 4) sees also Fig. 5, and the subregion forms P electrode 3 on described ITO transparency conducting layer 2, and the subregion forms N electrode 4 on the n type semiconductor layer 12 of described sunk area 15; Described P electrode 3 base material are Cr;
Concrete, carry out first the N/P light shield, then carry out metal evaporation, metal-stripping forms described P electrode 3 and described N electrode 4, this is the common technology means of this area, repeats no more herein.
Concrete, described P electrode 3 is Cr/Pt/Au three-decker (being followed successively by Cr metal level, Pt metal level and Au metal level from bottom to top).Described N electrode 4 also is metal electrode.In the present embodiment, described P electrode 3 comprises Cr metal level 31, Pt metal level 32 and Au metal level 33 from bottom to top successively, and described N electrode 4 is preferably and comprises successively Cr metal level 41, Pt metal level 42 and Au metal level 43 from bottom to top.Described P electrode, N electrode adopt vacuum electronic to steam and cross legal system for forming.
Step 5), annealing forms oxide so that the O of Cr in ITO transparency conducting layer 2 of P electrode 3 bottoms is combined.
Concrete, annealing region is 300 ~ 650 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.By high annealing, the Cr of described P electrode 3 bottoms and the O element in the described ITO transparency conducting layer 2 are reacted, generate the Cr oxide.Because the combination of chemical bond has been arranged between Cr metal level 31 and the described ITO transparency conducting layer 2, the adhesiveness between described P electrode 3 and the described ITO transparency conducting layer 2 strengthens greatly, can effectively prevent coming off of metal electrode.
In described step 5), annealing temperature is higher, and is tightr in conjunction with getting between described Cr metal level 31 and the described ITO transparency conducting layer 2, thereby the adhesiveness between described P electrode 3 and the described ITO transparency conducting layer 2 is better.Annealing temperature such as 400 ℃, 450 ℃ is better than 300 ℃ annealing temperature.In the present embodiment, described annealing region is preferably 500 ~ 650 ℃.
At last, can be in described step 5) deposit passivation layer such as silicon dioxide layer etc. on the structure that forms, described passivation layer is carried out etching after opening the diplopore light shield, finally form light-emitting diode chip for backlight unit, this is the conventional means of this area, repeats no more herein.
In sum, the manufacture method of light-emitting diode chip for backlight unit of the present invention, utilize sputtering method to form the brightness that the ITO transparency conducting layer promotes light-emitting diode chip for backlight unit, utilize high annealing simultaneously and form the Cr oxide so that the O of Cr in the ITO transparency conducting layer of P electrode bottom is combined, the combination of chemical bond has been arranged between P electrode and the ITO transparency conducting layer, adhesiveness strengthens greatly, thereby has solved the problem that metal electrode comes off.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (8)
1. the manufacture method of a light-emitting diode chip for backlight unit is characterized in that, the manufacture method of described light-emitting diode chip for backlight unit may further comprise the steps at least:
1) provide a substrate, described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively;
2) described substrate is carried out partial etching, form a sunk area in described substrate, described sunk area bottom arrives in the described n type semiconductor layer;
3) adopt sputtering method to form an ITO transparency conducting layer at described p type semiconductor layer;
4) subregion forms the P electrode on described ITO transparency conducting layer, and the subregion forms the N electrode on the n type semiconductor layer of described sunk area; Described P electrode base material is Cr;
5) anneal so that the O of Cr with the ITO transparency conducting layer in of P electrode bottom is combined the formation oxide.
2. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the annealing region in the described step 5) is 300 ~ 650 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.
3. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the thickness range of the ITO transparency conducting layer that forms in the described step 3) is 300 ~ 2500 dusts.
4. the manufacture method of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the ITO transparency conducting layer that forms in the described step 3) at the light transmittance of 460nm wave band more than or equal to 99.5%.
5. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the crystalline texture of the ITO transparency conducting layer that forms in the described step 3) is sheet.
6. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the square resistance scope of the ITO transparency conducting layer that forms in the described step 3) is 15 ~ 20 Ω.
7. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: described P electrode is the Cr/Pt/Au three-decker.
8. the manufacture method of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described P electrode, N electrode adopt vacuum electronic to steam to cross legal system standby.
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| CN2013101922774A CN103325892A (en) | 2013-05-22 | 2013-05-22 | Method for manufacturing light emitting diode chip |
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| CN2013101922774A CN103325892A (en) | 2013-05-22 | 2013-05-22 | Method for manufacturing light emitting diode chip |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108796A1 (en) * | 2009-11-06 | 2011-05-12 | Ultratech, Inc. | Laser spike annealing for GaN LEDs |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
| US20110266519A1 (en) * | 2010-04-28 | 2011-11-03 | Hwang Sung Min | Light emitting device, light emitting device package and lighting system |
| CN102468391A (en) * | 2010-11-03 | 2012-05-23 | 佛山市奇明光电有限公司 | Light-emitting diode structure, and manufacturing method thereof |
-
2013
- 2013-05-22 CN CN2013101922774A patent/CN103325892A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108796A1 (en) * | 2009-11-06 | 2011-05-12 | Ultratech, Inc. | Laser spike annealing for GaN LEDs |
| US20110266519A1 (en) * | 2010-04-28 | 2011-11-03 | Hwang Sung Min | Light emitting device, light emitting device package and lighting system |
| CN102468391A (en) * | 2010-11-03 | 2012-05-23 | 佛山市奇明光电有限公司 | Light-emitting diode structure, and manufacturing method thereof |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
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