CN103311398A - LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof - Google Patents
LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof Download PDFInfo
- Publication number
- CN103311398A CN103311398A CN2013101942087A CN201310194208A CN103311398A CN 103311398 A CN103311398 A CN 103311398A CN 2013101942087 A CN2013101942087 A CN 2013101942087A CN 201310194208 A CN201310194208 A CN 201310194208A CN 103311398 A CN103311398 A CN 103311398A
- Authority
- CN
- China
- Prior art keywords
- electrode
- transition zone
- layer
- electrode transition
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention provides an LED (Light Emitting Diode) chip with an electrode transitional layer and a manufacturing method thereof. The chip at least comprises a substrate, wherein a sunken area reaching an N type semiconductor layer by the bottom is formed on the substrate. An ITO (Indium Tin Oxide) transparent conductive layer formed by a sputtering method is formed on a P type semiconductor layer. The electrode transitional layer is formed in an upper part area of the ITO transparent conductive layer, wherein the bottom material of the electrode transitional layer is Cr. Cr at the bottom of the electrode transitional layer is combined with O in the ITO transparent conductive layer to form an oxide. A P electrode is formed on the electrode transitional layer. An N electrode is formed on the N type semiconductor layer in the sunken area. According to the invention, the brightness of the LED chip is improved by the ITO transparent conductive layer formed by the sputtering method, and meanwhile, the P electrode is firmly combined with the ITO transparent conductive layer through the electrode transitional layer by means of high temperature annealing, so that the problem of metal electrode fall-off is solved. The annealing process window is expanded, and the problem that the P electrode and the N electrode are draped under high temperature annealing is solved.
Description
Technical field
The invention belongs to the light emitting semiconductor device field, relate to a kind of led chip and manufacture method thereof with electrode transition zone.
Background technology
Light-emitting diode (Light Emitting Diode, LED) have that volume is little, efficient is high and an advantage such as the life-span is long, have a wide range of applications in fields such as traffic indication, outdoor panchromatic demonstrations, especially LED with its excellent performance by industry generally believe be the 4th generation light source ideal chose, led light source all is better than the conventional light source such as incandescent lamp, fluorescent lamp at aspects such as luminous efficiency, useful life, response time, environmental protection.
Ito thin film is a kind of N-shaped semiconductor of high degeneracy, free carrier is mainly derived from Sn to instead type replacement and the oxygen room of In, in lattice, can provide a free electron to enter conduction band behind the position of each Sn replacement In, the oxygen room also provides electronics as the alms giver simultaneously, therefore, film generally has higher carrier concentration and lower resistivity, and electric conductivity can be compared with metallic conductor.The energy gap of ito thin film is about 3.85 eV, and generally more than 85%, the simultaneously reflection of infrared region (1.2 pm) also can surpass 90%, and microwave is had obvious abated effect in the visible light wave range transmitance.Because its good conductivity and light transmission are widely used on the led chip transparent electrode thin film.
The technology of preparation ito thin film commonly used has sputtering method (sputter) and vacuum electronic vapour deposition method (E-gun) etc., and the technological parameter in the performance of ito thin film and preparation method and the preparation process is closely related, and can improve its photoelectric properties by post-processed.
All be to make ito thin film with the vacuum electronic vapour deposition method in the at present led chip manufacturing, be called for short E-gun ITO.But for the further LED device performance that improves, and then research is made ito thin film with sputtering method.Because the ito thin film crystallization degree that sputtering method is made is more complete, can greatly reduce light in film is propagated because the light of crystal boundary scattering loss, thereby improved the light extraction efficiency of led chip, but the relative vapour deposition method of the film evenness of making like this improves very large, greatly slacken with the adhesiveness of metal electrode, so have obscission between present sputter ITO and the metal electrode.
So, how guarantee that not coming off of metal electrode is urgent problem when transparency electrode promotes chip brightness utilizing sputter ITO to do.
Summary of the invention
The shortcoming of prior art the object of the present invention is to provide a kind of led chip and manufacture method thereof with electrode transition zone in view of the above, the problem that the ITO that easily forms from sputtering method for solution prior art metal electrode comes off.
Reach for achieving the above object other relevant purposes, the invention provides the manufacture method that has the led chip of electrode transition zone with a kind of, may further comprise the steps at least:
1) provide a substrate, described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively;
2) described substrate is carried out partial etching, form a sunk area in described substrate, described sunk area bottom arrives in the described n type semiconductor layer;
3) adopt sputtering method to form an ITO transparency conducting layer at described p type semiconductor layer; Then the subregion forms the electrode transition zone on described ITO transparency conducting layer; Described electrode transition zone base material is Cr;
4) anneal so that the O of Cr with the ITO transparency conducting layer in of described electrode transition zone bottom is combined the formation oxide;
5) form the P electrode at described electrode transition zone, the subregion forms the N electrode on the n type semiconductor layer of described sunk area.
Alternatively, the annealing region in the described step 4) is 300 ~ 750 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.
The thickness range of the ITO transparency conducting layer that forms in the described step 3) alternatively, is 300 ~ 2500 dusts.
Alternatively, the ITO transparency conducting layer that forms in the described step 3) at the light transmittance of 460nm wave band more than or equal to 99.5%.
The crystalline texture of the ITO transparency conducting layer that forms in the described step 3) alternatively, is sheet.
The square resistance scope of the ITO transparency conducting layer that forms in the described step 3) alternatively, is 15 ~ 20 Ω.
Alternatively, the electrode transition zone that forms in the described step 3) is the Cr/Ni double-layer structure.
Alternatively, described P electrode is the Cr/Pt/Au three-decker.
The present invention also provides a kind of led chip with electrode transition zone, and described led chip with electrode transition zone comprises substrate at least, and described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively; Be formed with a bottom on the described substrate and arrive sunk area in the described n type semiconductor layer; Be formed with the ITO transparency conducting layer that adopts sputtering method to form on the described p type semiconductor layer; The subregion is formed with the electrode transition zone that base material is Cr on the described ITO transparency conducting layer, and the O of Cr in the ITO transparency conducting layer of described electrode transition zone bottom is combined and formed oxide; Be formed with the P electrode on the described electrode transition zone, be formed with the N electrode on the n type semiconductor layer of described sunk area.
Alternatively, described electrode transition zone is the Cr/Ni double-layer structure, and described P electrode is the Cr/Pt/Au three-decker.
As mentioned above, led chip and manufacture method thereof with electrode transition zone of the present invention, has following beneficial effect: utilize sputtering method to form the brightness that the ITO transparency conducting layer promotes light-emitting diode chip for backlight unit, utilize high annealing simultaneously and form the Cr oxide so that the O of Cr in the ITO transparency conducting layer of electrode transition zone bottom is combined, the combination of chemical bond has been arranged between electrode transition zone and the ITO transparency conducting layer, adhesiveness strengthens greatly, and easier combination between P electrode and the electrode transition zone itself, so that the P electrode is by electrode transition zone and ITO transparency conducting layer strong bonded, thereby solved the problem that metal electrode comes off, and enlarge the annealing process window, avoided the P electrode, the problem of fold occurs in the N electrode under high annealing.
Description of drawings
Fig. 1 is shown as the generalized section of substrate in the manufacture method of the led chip with electrode transition zone of the present invention.
Fig. 2 is shown as the schematic diagram that forms sunk area in the manufacture method of the led chip with electrode transition zone of the present invention in substrate.
Fig. 3 is shown as in the manufacture method of the led chip with electrode transition zone of the present invention and adopts sputtering method to form the schematic diagram of ITO transparency conducting layer at p type semiconductor layer.
Fig. 4 is shown as the shape appearance figure that adopts the ITO transparency conducting layer that sputtering method forms in the manufacture method of the led chip with electrode transition zone of the present invention.
Fig. 5 is shown as the schematic diagram that forms the electrode transition zone in the manufacture method of the led chip with electrode transition zone of the present invention.
Fig. 6 is shown as the generalized section with led chip of electrode transition zone of the present invention.
The element numbers explanation
1 substrate
11 substrates
The 12N type semiconductor layer
13 luminescent layers
The 14P type semiconductor layer
15 sunk areas
The 2ITO transparency conducting layer
3 electrode transition zones
The 4P electrode
The 5N electrode
31,41,51Cr metal level
The 32Ni metal level
42,52Pt metal level
43,53Au metal level
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 to Fig. 6.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
The invention provides a kind of manufacture method with led chip of electrode transition zone, may further comprise the steps at least:
Step 1) sees also Fig. 1, and a substrate 1 is provided, and described substrate comprises substrate 11, n type semiconductor layer 12, luminescent layer 13 and p type semiconductor layer 14 from bottom to top successively;
Concrete, described substrate 11 can be Sapphire Substrate, also can be other Semiconductor substrate, for example silicon substrate or SOI.Described n type semiconductor layer 12 is the N-GaN layer, and described luminescent layer 13 is multiple quantum trap, and its material can be the GaN that In mixes, and described p type semiconductor layer 14 is the P-GaN layer.
Step 2), see also Fig. 2, described substrate 1 is carried out partial etching, form a sunk area 15 in described substrate 1, described sunk area 15 bottoms arrive in the described n type semiconductor layer 12;
Concrete, adopt conventional MESA(platform) be etched in the described sunk area 15 of formation in the described substrate 1, described n type semiconductor layer 12 parts are etched away.
Step 3) at first sees also Fig. 3 and Fig. 4, adopts sputtering method to form an ITO transparency conducting layer 2 at described p type semiconductor layer 14; See also Fig. 5, the subregion forms electrode transition zone 3 on described ITO transparency conducting layer 2 again; Described electrode transition zone 3 base material are Cr;
Concrete, described ITO transparency conducting layer 2 also comprises the transparency electrode etching of routine usually as transparency electrode after the described ITO transparency conducting layer 2 of deposition, and this is the common practise of this area, repeats no more herein.
In the present embodiment, adopting the thickness range of the described ITO transparency conducting layer 2 that sputtering method forms at described p type semiconductor layer 14 is 300 ~ 2500 dusts, and more than or equal to 99.5%, crystalline texture is sheet at the light transmittance of 460nm wave band for it.The square resistance scope of described ITO transparency conducting layer 2 is 15 ~ 20 Ω.
See also Fig. 4, be shown as the shape appearance figure of the ITO transparency conducting layer 2 that adopts sputtering method formation in the present embodiment, can find out that the crystalline texture of described ITO transparency conducting layer 2 is sheet, surface ratio is more smooth.
Adopt sputtering method to form described ITO transparency conducting layer 2 in this step, the crystallization degree of the ITO transparency conducting layer 2 that forms by the method is more complete, can greatly reduce light light owing to the crystal boundary scattering loss in ITO electrically conducting transparent Es-region propagations, thereby improve the light extraction efficiency of the light-emitting diode chip for backlight unit of producing.
Step 4), annealing forms oxide so that the O of Cr in ITO transparency conducting layer 2 of described electrode transition zone 3 bottoms is combined.
Concrete, described intermediate metal 3 is individual layer, two-layer or sandwich construction.In the present embodiment, described intermediate metal 3 is preferably the Cr/Ni double-layer structure, comprises successively Cr metal level 31 and Ni metal level 32 from bottom to top.Wherein Ni metal level 32 can form good contacts with Cr metal level 31, difficult drop-off, and also more easily form firmly contact when on described Ni metal level 32, forming again another Cr metal level or other metal level.
Concrete, annealing region is 300 ~ 750 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.By high annealing, the Cr of described electrode transition zone 3 bottoms and the O element in the described ITO transparency conducting layer 2 are reacted, generate the Cr oxide.Because the combination of chemical bond has been arranged between Cr metal level 31 and the described ITO transparency conducting layer 2, the adhesiveness between described electrode transition zone 3 and the described ITO transparency conducting layer 2 strengthens greatly.
Step 5) sees also Fig. 6, forms P electrode 4 at described electrode transition zone 3, and the subregion forms N electrode 5 on the n type semiconductor layer 12 of described sunk area 15; Described P electrode 4 base material are Cr;
Concrete, carry out first the N/P light shield, then carry out metal evaporation, metal-stripping forms described P electrode 4 and described N electrode 5, this is the common technology means of this area, repeats no more herein.
Concrete, described P electrode 4 is Cr/Pt/Au three-decker (being followed successively by Cr metal level, Pt metal level and Au metal level from bottom to top).Described N electrode 5 also is metal electrode.In the present embodiment, described P electrode 4 comprises Cr metal level 41, Pt metal level 42 and Au metal level 43 from bottom to top successively, and described N electrode 5 is preferably and comprises successively Cr metal level 51, Pt metal level 52 and Au metal level 53 from bottom to top.Described P electrode, N electrode adopt vacuum electronic to steam and cross legal system for forming.
Owing to making the combination that chemical bond has been arranged between described Cr metal level 31 and the described ITO transparency conducting layer 2 by high annealing in the described step 4), adhesiveness strengthens greatly, and the P electrode is metal electrode, and easier combination between the electrode transition zone itself, wherein, in the present embodiment, the Ni metal level 32 on electrode transition zone top can form close contact with the Cr layer 41 of P electrode bottom, thereby so that the P electrode effectively prevents coming off of metal electrode by electrode transition zone and ITO transparency conducting layer strong bonded.
It is pointed out that annealing temperature is higher in described step 4), tightr in conjunction with getting between the Cr metal level 31 in the described transition metal layer and the described ITO transparency conducting layer 2, thus the adhesiveness between described P electrode 3 and the described ITO transparency conducting layer 2 is better.Annealing temperature such as 400 ℃, 450 ℃ is better than 300 ℃ annealing temperature, and 600 ℃, 700 ℃ annealing temperature is better than 500 ℃ annealing temperature.In the present embodiment, described annealing region is preferably 500 ~ 750 ℃.If without intermediate metal 3, directly form P electrode 4 at described ITO transparency conducting layer, under high annealing, fold easily occurs in the Au metal level of described P electrode 4, and annealing temperature is higher, and fold is larger, is unfavorable for follow-up chip package.And in the manufacture method of the led chip with electrode transition zone of the present invention, at first utilize intermediate metal under high annealing, to form firm the contact with the ITO transparency conducting layer, wherein the temperature of annealing can be selected higher temperature, Cr metal level 31 in the described transition metal layer of further reinforcement and the adhesiveness between the described ITO transparency conducting layer 2, then form P electrode and N electrode according to common process, P electrode and N electrode need not to have avoided thus the problem of electrode generation fold through high annealing (300 ~ 750 ℃) process.
At last, can be in described step 5) deposit passivation layer such as silicon dioxide layer etc. on the structure that forms, described passivation layer is carried out etching after opening the diplopore light shield, finally form the led chip with electrode transition zone of the present invention, this is the conventional means of this area, repeats no more herein.
The present invention also provides a kind of led chip with electrode transition zone, see also Fig. 6, be shown as the generalized section with led chip of electrode transition zone of the present invention, as shown in the figure, described led chip with electrode transition zone comprises substrate 1 at least, and described substrate 1 comprises substrate 11, n type semiconductor layer 12, luminescent layer 13 and p type semiconductor layer 14 from bottom to top successively; Be formed with a bottom on the described substrate 1 and arrive sunk area in the described n type semiconductor layer 12; Be formed with the ITO transparency conducting layer 2 that adopts sputtering method to form on the described p type semiconductor layer 14; The subregion is formed with the electrode transition zone 3 that base material is Cr on the described ITO transparency conducting layer 2, and the O of Cr in described ITO transparency conducting layer 2 of described electrode transition zone 3 bottoms is combined and formed oxide; Be formed with P electrode 4 on the described electrode transition zone 3, be formed with N electrode 5 on the n type semiconductor layer of described sunk area.
In the present embodiment, described electrode transition zone 3 is preferably the Cr/Ni double-layer structure, be followed successively by Cr metal level 31 and Ni metal level 32 from bottom to top, described P electrode 4 is the Cr/Pt/Au three-decker, comprise successively Cr metal level 41, Pt metal level 42 and Au metal level 43 from bottom to top, described N electrode 5 is metal electrode also, is preferably in the present embodiment to comprise successively Cr metal level 51, Pt metal level 52 and Au metal level 53 from bottom to top.
In the led chip with electrode transition zone of the present invention, O in the ITO transparency conducting layer 2 that the Cr of described electrode transition zone 3 bottoms and sputtering method form is combined and is formed oxide, greatly improved the adhesiveness between electrode transition zone and the ITO transparency conducting layer, the P electrode is by electrode transition zone and ITO transparency conducting layer strong bonded, difficult drop-off, and the P electrode surface is smooth, is conducive to the back segment encapsulation.
In sum, led chip and manufacture method thereof with electrode transition zone of the present invention, utilize sputtering method to form the brightness that the ITO transparency conducting layer promotes light-emitting diode chip for backlight unit, utilize high annealing simultaneously and form the Cr oxide so that the O of Cr in the ITO transparency conducting layer of electrode transition zone bottom is combined, the combination of chemical bond has been arranged between electrode transition zone and the ITO transparency conducting layer, adhesiveness strengthens greatly, and easier combination between P electrode and the electrode transition zone itself, so that the P electrode is by electrode transition zone and ITO transparency conducting layer strong bonded, thereby solved the problem that metal electrode comes off, and enlarged the process window of high annealing, avoided the P electrode, the problem of fold occurs in the N electrode under high annealing.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (10)
1. the manufacture method with led chip of electrode transition zone is characterized in that, described manufacture method with led chip of electrode transition zone may further comprise the steps at least:
1) provide a substrate, described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively;
2) described substrate is carried out partial etching, form a sunk area in described substrate, described sunk area bottom arrives in the described n type semiconductor layer;
3) adopt sputtering method to form an ITO transparency conducting layer at described p type semiconductor layer; Then the subregion forms the electrode transition zone on described ITO transparency conducting layer; Described electrode transition zone base material is Cr;
4) anneal so that the O of Cr with the ITO transparency conducting layer in of described electrode transition zone bottom is combined the formation oxide;
5) form the P electrode at described electrode transition zone, the subregion forms the N electrode on the n type semiconductor layer of described sunk area.
2. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: the annealing region in the described step 4) is 300 ~ 750 ℃, and annealing time is 1 ~ 30min, and annealing atmosphere comprises oxygen.
3. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: the thickness range of the ITO transparency conducting layer that forms in the described step 3) is 300 ~ 2500 dusts.
4. the manufacture method with led chip of electrode transition zone according to claim 1 is characterized in that: the ITO transparency conducting layer that forms in the described step 3) at the light transmittance of 460nm wave band more than or equal to 99.5%.
5. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: the crystalline texture of the ITO transparency conducting layer that forms in the described step 3) is sheet.
6. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: the square resistance scope of the ITO transparency conducting layer that forms in the described step 3) is 15 ~ 20 Ω.
7. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: the electrode transition zone that forms in the described step 3) is the Cr/Ni double-layer structure.
8. the manufacture method with led chip of electrode transition zone according to claim 1, it is characterized in that: described P electrode is the Cr/Pt/Au three-decker.
9. led chip with electrode transition zone, it is characterized in that: described led chip with electrode transition zone comprises substrate at least, and described substrate comprises substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to top successively; Be formed with a bottom on the described substrate and arrive sunk area in the described n type semiconductor layer; Be formed with the ITO transparency conducting layer that adopts sputtering method to form on the described p type semiconductor layer; The subregion is formed with the electrode transition zone that base material is Cr on the described ITO transparency conducting layer, and the O of Cr in the ITO transparency conducting layer of described electrode transition zone bottom is combined and formed oxide; Be formed with the P electrode on the described electrode transition zone, be formed with the N electrode on the n type semiconductor layer of described sunk area.
10. the led chip with electrode transition zone according to claim 9, it is characterized in that: described electrode transition zone is the Cr/Ni double-layer structure, described P electrode is the Cr/Pt/Au three-decker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101942087A CN103311398A (en) | 2013-05-22 | 2013-05-22 | LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101942087A CN103311398A (en) | 2013-05-22 | 2013-05-22 | LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103311398A true CN103311398A (en) | 2013-09-18 |
Family
ID=49136404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101942087A Pending CN103311398A (en) | 2013-05-22 | 2013-05-22 | LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103311398A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810436A (en) * | 2015-03-30 | 2015-07-29 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN109923743A (en) * | 2016-11-01 | 2019-06-21 | 索尼半导体解决方案公司 | The method of semiconductor devices, semiconductor laser and manufacturing semiconductor devices |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771119A (en) * | 2010-01-29 | 2010-07-07 | 上海大学 | LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof |
| CN101777616A (en) * | 2010-01-29 | 2010-07-14 | 上海大学 | Zinc oxide-based transparent electrode light emitting diode and preparation method thereof |
| CN101971368A (en) * | 2008-03-13 | 2011-02-09 | 昭和电工株式会社 | Semiconductor light-emitting device and method for manufacturing the same |
| US20110108796A1 (en) * | 2009-11-06 | 2011-05-12 | Ultratech, Inc. | Laser spike annealing for GaN LEDs |
| CN102479894A (en) * | 2010-11-25 | 2012-05-30 | 同方光电科技有限公司 | Light emitting diode of gallium nitride (GaN) based material and manufacturing method thereof |
-
2013
- 2013-05-22 CN CN2013101942087A patent/CN103311398A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101971368A (en) * | 2008-03-13 | 2011-02-09 | 昭和电工株式会社 | Semiconductor light-emitting device and method for manufacturing the same |
| US20110108796A1 (en) * | 2009-11-06 | 2011-05-12 | Ultratech, Inc. | Laser spike annealing for GaN LEDs |
| CN101771119A (en) * | 2010-01-29 | 2010-07-07 | 上海大学 | LED (light-emitting diode) of zinc-oxide based transparent electrode and manufacturing method thereof |
| CN101777616A (en) * | 2010-01-29 | 2010-07-14 | 上海大学 | Zinc oxide-based transparent electrode light emitting diode and preparation method thereof |
| CN102479894A (en) * | 2010-11-25 | 2012-05-30 | 同方光电科技有限公司 | Light emitting diode of gallium nitride (GaN) based material and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810436A (en) * | 2015-03-30 | 2015-07-29 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN104810436B (en) * | 2015-03-30 | 2017-07-28 | 华灿光电股份有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN109923743A (en) * | 2016-11-01 | 2019-06-21 | 索尼半导体解决方案公司 | The method of semiconductor devices, semiconductor laser and manufacturing semiconductor devices |
| US11876349B2 (en) | 2016-11-01 | 2024-01-16 | Sony Semiconductor Solutions Corporation | Semiconductor device, semiconductor laser, and method of producing a semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103280501A (en) | LED (light-emitting diode) chip and manufacturing method thereof | |
| CN107808895B (en) | Transparent OLED display and preparation method thereof | |
| CN103022306B (en) | Light emitting diode and production method thereof | |
| CN105023985A (en) | LED (Light Emitting Diode) chip and preparation method thereof | |
| CN106784173B (en) | LED chip and preparation method thereof with capacitance structure | |
| CN106684223B (en) | A kind of chip of light emitting diode and preparation method thereof | |
| CN102800764B (en) | Semiconductor light-emitting apparatus and manufacture method thereof | |
| CN104600166A (en) | LED chip structure and preparation method thereof | |
| CN106449619B (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| CN101789479A (en) | Transparent electrode LED and method for manufacturing same | |
| CN103311398A (en) | LED (Light Emitting Diode) chip with electrode transitional layer and manufacturing method thereof | |
| CN104617191A (en) | LED vertical chip with current block structure and preparation method thereof | |
| CN204809251U (en) | Led chip | |
| CN107026221A (en) | LED chip with high brightness and preparation method thereof | |
| CN106848006A (en) | Flip LED chips and preparation method thereof | |
| CN105591001B (en) | A kind of light emitting diode and preparation method thereof | |
| CN106848027B (en) | The preparation method of the vertical flip LED chips of high reliability | |
| CN106356389B (en) | A kind of display panel packaging method and display panel | |
| CN205692851U (en) | Led chip | |
| CN105448956A (en) | Organic light emitting display device and manufacturing method thereof | |
| CN103325892A (en) | Method for manufacturing light emitting diode chip | |
| CN103280499B (en) | LED (Light Emitting Diode) chip and manufacturing method thereof | |
| CN104134724A (en) | High-voltage LED chip and manufacturing method thereof | |
| CN106848005A (en) | Lift flip LED chips of brightness and preparation method thereof | |
| TWI667786B (en) | Light-emitting diode display and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20160615 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |