CN103325821A - Insulated gate bipolar bidirectional selectable power tube - Google Patents
Insulated gate bipolar bidirectional selectable power tube Download PDFInfo
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- CN103325821A CN103325821A CN2013102430654A CN201310243065A CN103325821A CN 103325821 A CN103325821 A CN 103325821A CN 2013102430654 A CN2013102430654 A CN 2013102430654A CN 201310243065 A CN201310243065 A CN 201310243065A CN 103325821 A CN103325821 A CN 103325821A
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Abstract
The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar bidirectional selectable power tube which comprises a substrate, a gate oxide layer and a polysilicon gate. The substrate comprises a substrate body, an upper epitaxial layer on the substrate body and a lower epitaxial layer on the lower portion of the substrate body, a well region is arranged in the upper epitaxial layer, the gate oxide layer and the polysilicon gate are located on the joints of the well region and the epitaxial layers, and an upper collector electrode drift region is arranged in the upper epitaxial layer. The lower epitaxial layer is provided with a lower collector electrode drift region. An emitting electrode drift region is arranged in the well region, an upper collector electrode is formed in the upper collector electrode drift region, a lower collector electrode is formed in the lower collector electrode drift region, an emitting electrode is formed in the emitting electrode drift region, and a grid electrode is formed on the polysilicon gate. The insulated gate bipolar bidirectional selectable power tube has the advantages that in a traditional structure, on the basis of a collector electrode on the back of a semiconductor chip, another collector is additionally arranged on the substrate body on the same face of the emitting electrode and the grid electrode semiconductor chip, and integration of the insulated gate bipolar bidirectional selectable power tube and other semiconductor components is further facilitated.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to the two-way optional power tube of a kind of insulated gate bipolar.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar translator power tube) be by BGT (bipolar junction transistor, double pole triode) and the compound full-control type voltage driven type power electronic device that forms of MOSFET (metal oxide semiconductor field effect tube), have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR (Giant Transistor, power transistor) concurrently.The saturation pressure of GTR reduces, and current carrying density is large, but drive current is larger; The driving power of MOSFET is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, and driving power is little, and the saturation pressure reduction, is fit to very much be applied to the high voltage variable streaming system that direct voltage is 1500V, such as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives.
By the research to existing insulated gate bipolar translator power tube, the inventor finds, because its emitter and grid generally are made in the front of semiconductor wafer, collector electrode generally is sitting in the back side of semiconductor wafer, and other semiconductor device, widely used MOS transistor in very lagre scale integrated circuit (VLSIC) for example, its source electrode, drain and gate generally all are made in the same face of semiconductor wafer, and therefore this insulated gate bipolar translator power tube is unfavorable for other semiconductor device integrated.If but emitter, grid and collector electrode all are made in the front of semiconductor wafer, then still be unfavorable for the other parts semiconductor device integratedly, have certain limitation.
Summary of the invention
The present invention provides a kind of insulated gate bipolar two-way optional power tube according to the deficiencies in the prior art, by the setting to emitter, grid and collector electrode, so that this technical scheme is beneficial to various semiconductor device is integrated.
The two-way optional power tube of a kind of insulated gate bipolar, comprise substrate, gate oxide and polysilicon gate, upper epitaxial loayer on described base substrate, the substrate and the lower epitaxial loayer under the substrate, be provided with well region in the upper epitaxial loayer, described gate oxide and polysilicon gate are positioned at the junction of well region and epitaxial loayer, are provided with collector drift region in the described upper epitaxial loayer; Described lower epitaxial loayer is provided with lower collector drift region; Be provided with the emitter drift region in the described well region, described upper collector drift region forms collector electrode, and described lower collector drift region forms lower collector electrode, and emitter forms emitter on the drift region, forms grid on described many silicon wafers grid.
As preferably, it is that the P type mixes that described upper epitaxial loayer and lower epitaxial loayer are the N-type doped substrate, and well region is that the P type mixes, and upper collector drift region and lower collector drift region are the P type and mix, and the emitter drift region is that N-type is mixed.
As preferably, described upper collector drift region and lower collector drift region periphery are equipped with resilient coating, and resilient coating is positioned at and lays respectively at epitaxial loayer and lower epitaxial loayer.
As preferably, described buffering area is that N mixes.
Beneficial effect of the present invention is, simple in structure, technology is reasonable, be positioned in the traditional structure on the basis of collector electrode of back surface of semiconductor wafer, set up a collector electrode at the substrate of emitter and gate semiconductor wafer the same face again, and then be conducive to the integrated of insulated gate bipolar translator power tube and other semiconductor device.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
The present invention provides a kind of insulated gate bipolar two-way optional power tube according to the deficiencies in the prior art, as shown in Figure 1, comprise substrate 1, gate oxide 12 and polysilicon gate 11, upper epitaxial loayer 2 on described base substrate 3, the substrate and the lower epitaxial loayer 4 under the substrate, be provided with well region 15 in the upper epitaxial loayer, described gate oxide and polysilicon gate are positioned at the junction of well region and epitaxial loayer, are provided with collector drift region 6 in the described upper epitaxial loayer; Described lower epitaxial loayer is provided with lower collector drift region 14; Be provided with emitter drift region 8 in the described well region, described upper collector drift region forms collector electrode 5, described lower collector drift region forms lower collector electrode 13, form emitter 9 on the emitter drift region, form grid 10 on described many silicon wafers grid, it is that the P type mixes that described upper epitaxial loayer and lower epitaxial loayer are the N-type doped substrate, well region is that the P type mixes, upper collector drift region and lower collector drift region are the P type and mix, and the emitter drift region is that N-type is mixed, and described upper collector drift region and lower collector drift region periphery are equipped with resilient coating 7, and resilient coating is positioned at and lays respectively at epitaxial loayer and lower epitaxial loayer, and described buffering area is that N mixes.
The above is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. two-way optional power tube of insulated gate bipolar, it is characterized in that, comprise substrate, gate oxide and polysilicon gate, upper epitaxial loayer on described base substrate, the substrate and the lower epitaxial loayer under the substrate, be provided with well region in the upper epitaxial loayer, described gate oxide and polysilicon gate are positioned at the junction of well region and epitaxial loayer, are provided with collector drift region in the described upper epitaxial loayer; Described lower epitaxial loayer is provided with lower collector drift region; Be provided with the emitter drift region in the described well region, described upper collector drift region forms collector electrode, and described lower collector drift region forms lower collector electrode, and emitter forms emitter on the drift region, forms grid on described many silicon wafers grid.
2. the two-way optional power tube of insulated gate bipolar according to claim 1, it is characterized in that, it is that the P type mixes that described upper epitaxial loayer and lower epitaxial loayer are the N-type doped substrate, well region is that the P type mixes, upper collector drift region and lower collector drift region are the P type and mix, and the emitter drift region is that N-type is mixed.
3. the two-way optional power tube of insulated gate bipolar according to claim 1 is characterized in that, described upper collector drift region and lower collector drift region periphery are equipped with resilient coating, and resilient coating is positioned at and lays respectively at epitaxial loayer and lower epitaxial loayer.
4. the two-way optional power tube of insulated gate bipolar according to claim 3 is characterized in that, described buffering area is that N mixes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102430654A CN103325821A (en) | 2013-06-19 | 2013-06-19 | Insulated gate bipolar bidirectional selectable power tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013102430654A CN103325821A (en) | 2013-06-19 | 2013-06-19 | Insulated gate bipolar bidirectional selectable power tube |
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| CN2013102430654A Pending CN103325821A (en) | 2013-06-19 | 2013-06-19 | Insulated gate bipolar bidirectional selectable power tube |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895633A (en) * | 2014-12-04 | 2016-08-24 | 南京励盛半导体科技有限公司 | Semiconductor bidirectional power device structure |
| CN106796951A (en) * | 2014-10-13 | 2017-05-31 | 理想能量有限公司 | Field plate on two apparent surfaces of biradical pole bidirectional bipolar transistor：Device, method and system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487078A (en) * | 2010-12-06 | 2012-06-06 | 无锡华润上华半导体有限公司 | Insulated gate bipolar power tube and manufacture method thereof |
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2013
- 2013-06-19 CN CN2013102430654A patent/CN103325821A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487078A (en) * | 2010-12-06 | 2012-06-06 | 无锡华润上华半导体有限公司 | Insulated gate bipolar power tube and manufacture method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796951A (en) * | 2014-10-13 | 2017-05-31 | 理想能量有限公司 | Field plate on two apparent surfaces of biradical pole bidirectional bipolar transistor：Device, method and system |
| CN106796951B (en) * | 2014-10-13 | 2020-08-18 | 理想能量有限公司 | Field plates on two opposing surfaces of a bipolar transistor: device, method and system |
| CN105895633A (en) * | 2014-12-04 | 2016-08-24 | 南京励盛半导体科技有限公司 | Semiconductor bidirectional power device structure |
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Application publication date: 20130925 |