WO2023178864A1 - Semiconductor power device - Google Patents
Semiconductor power device Download PDFInfo
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- WO2023178864A1 WO2023178864A1 PCT/CN2022/101533 CN2022101533W WO2023178864A1 WO 2023178864 A1 WO2023178864 A1 WO 2023178864A1 CN 2022101533 W CN2022101533 W CN 2022101533W WO 2023178864 A1 WO2023178864 A1 WO 2023178864A1
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- diode
- silicon
- reverse
- power mosfet
- based power
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000011084 recovery Methods 0.000 claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 239000000969 carrier Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Definitions
- the present application relates to the technical field of semiconductor power devices, for example, to a semiconductor power device with a fast reverse recovery function.
- MOSFET metal-oxide-semiconductor field-effect transistor
- SiC materials are difficult to manufacture, consume high energy, and have a higher defect density than silicon materials.
- IGBT insulated gate bipolar transistor
- the switching loss of silicon-based IGBT is larger than that of power MOSFET, resulting in lower efficiency than SiC MOSFET. If silicon-based power MOSFET is used, it is directly connected in parallel. For SiC Schottky diodes, the reverse current will still flow through the parasitic body diode in the power MOSFET, resulting in the problem of long reverse recovery time not being completely solved.
- the present application provides a semiconductor power device to solve the technical problem of long reverse recovery time of silicon-based power MOSFETs in related technologies.
- This application provides a semiconductor power device, including a silicon-based power MOSFET and a reverse diode;
- the silicon-based power MOSFET includes a source, a drain, a gate, a body diode and a cut-off diode, the cathode of the body diode is connected to the drain, and the anode of the cut-off diode is connected to the anode of the body diode, The cathode of the cut-off diode is connected to the source;
- the source of the silicon-based power MOSFET is connected to the anode of the reverse diode, and the drain of the silicon-based power MOSFET is connected to the cathode of the reverse diode.
- FIG. 1 is an equivalent circuit schematic diagram of a semiconductor power device provided by an embodiment of the present application.
- FIG. 1 is an equivalent circuit schematic diagram of a semiconductor power device provided by an embodiment of the present application.
- a semiconductor power device provided by an embodiment of the present application includes a silicon-based power MOSFET 300 and a reverse diode 400.
- Silicon-based power MOSFET refers to a power MOSFET prepared on a silicon material substrate. Silicon-based power MOSFET has the advantages of simple manufacturing process and high reliability. At the same time, it avoids the low channel electron mobility and Vth when using SiC as power MOSFET. Drift and other issues.
- the silicon-based power MOSFET 300 includes a source 301, a drain 302, a gate 303, a body diode 304 and a cut-off diode 305.
- the body diode 304 is a parasitic diode structure in the silicon-based power MOSFET, and the cathode of the body diode 304 is connected to the drain 302.
- the anode of the cut-off diode 305 is connected to the anode of the body diode 304
- the cathode of the cut-off diode 305 is connected to the source electrode 301.
- the source 301 of the silicon-based power MOSFET 300 is connected to the anode of the reverse diode 400, and the drain 302 of the silicon-based power MOSFET 300 is connected to the cathode of the reverse diode 400.
- the reverse diode 400 is, for example, a SiC Schottky diode or a silicon-based fast recovery diode.
- the SiC Schottky diode refers to a Schottky diode prepared on a SiC material substrate.
- the silicon-based fast recovery diode refers to a silicon-based fast recovery diode. Fast recovery diode fabricated on the substrate.
- a semiconductor power device connects a silicon-based power MOSFET and a reverse diode in parallel, so that the diode forward voltage drop (Vfsd) value of the silicon-based power MOSFET is greater than the forward voltage drop (Vf) of the reverse diode. ) value, so that when the semiconductor power device of the embodiment of the present application is turned off: when the source voltage is greater than the drain voltage, the cut-off diode is in a negative bias state, which can greatly reduce the reverse current flowing through the body diode, thereby It can significantly reduce the minority carriers in the body diode, and at the same time, most of the reverse current can flow through the reverse diode.
- Both SiC Schottky diodes and silicon-based fast recovery diodes have the characteristics of small reverse recovery charge, reverse
- the advantage of short recovery time can significantly reduce the reverse recovery charge and reverse recovery time of the silicon-based power MOSFET, allowing the semiconductor power device of the present application to achieve a fast reverse recovery function.
- the diode forward voltage drop value of the silicon-based power MOSFET does not refer to the forward voltage drop value of the cut-off diode or body diode, but represents the forward voltage drop value of the silicon-based power MOSFET and represents the operating characteristics of the silicon-based power MOSFET.
- This application can also package the silicon-based power MOSFET 300 and the reverse diode 400 in the same package, which can save packaging costs and can also reduce the difficulty of circuit design and printed circuit board (PCB) in its application. ) board cost.
- PCB printed circuit board
- a silicon-based power MOSFET is connected in parallel with a reverse diode.
- Vds of the silicon-based power MOSFET is less than 0V, most of the reverse current flows through the reverse diode, which can significantly Improve the reverse recovery speed of silicon-based power MOSFET.
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Disclosed is a semiconductor power device, comprising a silicon-based power MOSFET and a reverse diode. The silicon-based power MOSFET comprises a source electrode, a drain electrode, a gate electrode, a body diode and a cut-off diode. The cathode of the body diode is connected to the drain electrode, the anode of the cut-off diode is connected to the anode of the body diode, and the cathode of the cut-off diode is connected to the source electrode. The source electrode of the silicon-based power MOSFET is connected to the anode of the reverse diode, and the drain electrode of the silicon-based power MOSFET is connected to the cathode of the reverse diode.
Description
本申请要求在2022年03月21日提交中国专利局、申请号为202210279749.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application with application number 202210279749.9, which was submitted to the China Patent Office on March 21, 2022. The entire content of this application is incorporated into this application by reference.
本申请涉及半导体功率器件技术领域，例如涉及一种具有快速反向恢复功能的半导体功率器件。The present application relates to the technical field of semiconductor power devices, for example, to a semiconductor power device with a fast reverse recovery function.
相关技术的功率金属-氧化物-半导体场效晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET)在关断时，当漏源电压Vds小于0V时，功率MOSFET内寄生的体二极管处于正偏压状态，反向电流从源极经体二极管流至漏极，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在功率MOSFET再一次开启时进行反向恢复，导致较大的反向恢复电流，反向恢复时间长。改善功率MOSFET的快速反向恢复速度的方法有：1)采用宽禁带半导体材料比如碳化硅(SiC)做功率MOSFET。但是SiC材料的制造难度大，能耗高，并且比硅材料的缺陷密度高。2)使用硅基绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，IGBT)并联SiC二极管，但是硅基IGBT的开关损耗比功率MOSFET大，导致效率低于SiC MOSFET，如果使用硅基功率MOSFET直接并联SiC肖特基二极管，反向电流仍然会流过功率MOSFET内寄生的体二极管，从而导致反向恢复时间长的问题不能得到彻底解决。When a related art power metal-oxide-semiconductor field-effect transistor (MOSFET) is turned off, when the drain-source voltage Vds is less than 0V, the parasitic body diode in the power MOSFET is in forward bias. In the voltage state, the reverse current flows from the source to the drain through the body diode. At this time, the current of the body diode injects minority carriers, and these minority carriers reversely recover when the power MOSFET is turned on again, resulting in Large reverse recovery current, long reverse recovery time. Methods to improve the fast reverse recovery speed of power MOSFETs include: 1) Use wide bandgap semiconductor materials such as silicon carbide (SiC) as power MOSFETs. However, SiC materials are difficult to manufacture, consume high energy, and have a higher defect density than silicon materials. 2) Use silicon-based insulated gate bipolar transistor (IGBT) to connect SiC diodes in parallel. However, the switching loss of silicon-based IGBT is larger than that of power MOSFET, resulting in lower efficiency than SiC MOSFET. If silicon-based power MOSFET is used, it is directly connected in parallel. For SiC Schottky diodes, the reverse current will still flow through the parasitic body diode in the power MOSFET, resulting in the problem of long reverse recovery time not being completely solved.
发明内容Contents of the invention
本申请提供一种半导体功率器件，以解决相关技术中的硅基功率MOSFET的反向恢复时间较长的技术问题。The present application provides a semiconductor power device to solve the technical problem of long reverse recovery time of silicon-based power MOSFETs in related technologies.
本申请提供的一种半导体功率器件，包括硅基功率MOSFET和反向二极管；This application provides a semiconductor power device, including a silicon-based power MOSFET and a reverse diode;
所述硅基功率MOSFET包括源极、漏极、栅极、体二极管和截止二极管，所述体二极管的阴极与所述漏极连接，所述截止二极管的阳极与所述体二极管的阳极连接，所述截止二极管的阴极与所述源极连接；The silicon-based power MOSFET includes a source, a drain, a gate, a body diode and a cut-off diode, the cathode of the body diode is connected to the drain, and the anode of the cut-off diode is connected to the anode of the body diode, The cathode of the cut-off diode is connected to the source;
所述硅基功率MOSFET的源极与所述反向二极管的阳极连接，所述硅基功率MOSFET的漏极与所述反向二极管的阴极连接。The source of the silicon-based power MOSFET is connected to the anode of the reverse diode, and the drain of the silicon-based power MOSFET is connected to the cathode of the reverse diode.
图1是本申请实施例提供的一种半导体功率器件的等效电路示意图。FIG. 1 is an equivalent circuit schematic diagram of a semiconductor power device provided by an embodiment of the present application.
以下将结合本申请实施例中的附图，通过具体方式，描述本申请的技术方案。所描述的实施例是本申请的一部分实施例。The technical solution of the present application will be described in a specific manner with reference to the drawings in the embodiments of the present application. The described embodiments are part of the embodiments of this application.
图1是本申请实施例提供的一种半导体功率器件的等效电路示意图，如图1所示，本申请实施例提供的一种半导体功率器件，包括硅基功率MOSFET 300和反向二极管400，硅基功率MOSFET是指在硅材料衬底上制备得到功率MOSFET，硅基功率MOSFET具有制造工艺简单、可靠性高的优点，同时避免了使用SiC做功率MOSFET时的沟道电子迁移率低、Vth漂移等问题。Figure 1 is an equivalent circuit schematic diagram of a semiconductor power device provided by an embodiment of the present application. As shown in Figure 1, a semiconductor power device provided by an embodiment of the present application includes a silicon-based power MOSFET 300 and a reverse diode 400. Silicon-based power MOSFET refers to a power MOSFET prepared on a silicon material substrate. Silicon-based power MOSFET has the advantages of simple manufacturing process and high reliability. At the same time, it avoids the low channel electron mobility and Vth when using SiC as power MOSFET. Drift and other issues.
硅基功率MOSFET 300包括源极301、漏极302、栅极303、体二极管304和截止二极管305，体二极管304是硅基功率MOSFET中寄生的二极管结构，体二极管304的阴极与漏极302连接，截止二极管305的阳极与体二极管304的阳极连接，截止二极管305的阴极与源极301连接。The silicon-based power MOSFET 300 includes a source 301, a drain 302, a gate 303, a body diode 304 and a cut-off diode 305. The body diode 304 is a parasitic diode structure in the silicon-based power MOSFET, and the cathode of the body diode 304 is connected to the drain 302. , the anode of the cut-off diode 305 is connected to the anode of the body diode 304, and the cathode of the cut-off diode 305 is connected to the source electrode 301.
硅基功率MOSFET 300的源极301与反向二极管400的阳极连接，硅基功率MOSFET 300的漏极302与反向二极管400的阴极连接。反向二极管400例如为SiC肖特基二极管或者为硅基快恢复二极管，SiC肖特基二极管是指在SiC材料衬底上制备得到的肖特基二极管，硅基快恢复二极管是指在硅材料衬底上制备得到的快恢复二极管。The source 301 of the silicon-based power MOSFET 300 is connected to the anode of the reverse diode 400, and the drain 302 of the silicon-based power MOSFET 300 is connected to the cathode of the reverse diode 400. The reverse diode 400 is, for example, a SiC Schottky diode or a silicon-based fast recovery diode. The SiC Schottky diode refers to a Schottky diode prepared on a SiC material substrate. The silicon-based fast recovery diode refers to a silicon-based fast recovery diode. Fast recovery diode fabricated on the substrate.
本申请实施例的一种半导体功率器件将硅基功率MOSFET与反向二极管并联，可以使得硅基功率MOSFET的二极管正向压降(Vfsd)值大于所述反向二极管的正向压降(Vf)值，从而本申请实施例的半导体功率器件在关断时：当源极电压大于漏极电压时，截止二极管处于负偏压状态，这能够大幅度降低流经体二极管的反向电流，从而能够大幅降低体二极管内的少子载流子，同时，绝大部分反向电流可以从反向二极管流过，而SiC肖特基二极管和硅基快恢复二极管均具有反向恢复电荷少、反向恢复时间短的优点，从而能够大幅降低硅基功率MOSFET的反向恢复电荷和反向恢复时间，使得本申请的半导体功率器件实现快速的反向恢复功能。硅基功率MOSFET的二极管正向压降值并不指代截止二极管或者体二极管的正向压降值，而是表示硅基功率MOSFET的正向压降值，表示硅基功率MOSFET的工作特性。A semiconductor power device according to an embodiment of the present application connects a silicon-based power MOSFET and a reverse diode in parallel, so that the diode forward voltage drop (Vfsd) value of the silicon-based power MOSFET is greater than the forward voltage drop (Vf) of the reverse diode. ) value, so that when the semiconductor power device of the embodiment of the present application is turned off: when the source voltage is greater than the drain voltage, the cut-off diode is in a negative bias state, which can greatly reduce the reverse current flowing through the body diode, thereby It can significantly reduce the minority carriers in the body diode, and at the same time, most of the reverse current can flow through the reverse diode. Both SiC Schottky diodes and silicon-based fast recovery diodes have the characteristics of small reverse recovery charge, reverse The advantage of short recovery time can significantly reduce the reverse recovery charge and reverse recovery time of the silicon-based power MOSFET, allowing the semiconductor power device of the present application to achieve a fast reverse recovery function. The diode forward voltage drop value of the silicon-based power MOSFET does not refer to the forward voltage drop value of the cut-off diode or body diode, but represents the forward voltage drop value of the silicon-based power MOSFET and represents the operating characteristics of the silicon-based power MOSFET.
本申请还可以将硅基功率MOSFET 300与反向二极管400封装在同一个封装体内，这可以节省封装成本，也可以减少在其应用时的电路设计难度和印制 线路板(Printed Circuit Board，PCB)板成本。This application can also package the silicon-based power MOSFET 300 and the reverse diode 400 in the same package, which can save packaging costs and can also reduce the difficulty of circuit design and printed circuit board (PCB) in its application. ) board cost.
本申请实施例的半导体功率器件，将硅基功率MOSFET与反向二极管并联，当硅基功率MOSFET的漏源电压Vds小于0V时，使得绝大部分反向电流从反向二极管流过，能够大幅提高硅基功率MOSFET的反向恢复速度。In the semiconductor power device of the embodiment of the present application, a silicon-based power MOSFET is connected in parallel with a reverse diode. When the drain-source voltage Vds of the silicon-based power MOSFET is less than 0V, most of the reverse current flows through the reverse diode, which can significantly Improve the reverse recovery speed of silicon-based power MOSFET.
Claims (5)
- 一种半导体功率器件，包括硅基功率金属-氧化物-半导体场效晶体管MOSFET和反向二极管；A semiconductor power device, including a silicon-based power metal-oxide-semiconductor field effect transistor MOSFET and a reverse diode;所述硅基功率MOSFET包括源极、漏极、栅极、体二极管和截止二极管，所述体二极管的阴极与所述漏极连接，所述截止二极管的阳极与所述体二极管的阳极连接，所述截止二极管的阴极与所述源极连接；The silicon-based power MOSFET includes a source, a drain, a gate, a body diode and a cut-off diode, the cathode of the body diode is connected to the drain, and the anode of the cut-off diode is connected to the anode of the body diode, The cathode of the cut-off diode is connected to the source;所述硅基功率MOSFET的源极与所述反向二极管的阳极连接，所述硅基功率MOSFET的漏极与所述反向二极管的阴极连接。The source of the silicon-based power MOSFET is connected to the anode of the reverse diode, and the drain of the silicon-based power MOSFET is connected to the cathode of the reverse diode.
- 如权利要求1所述的半导体功率器件，其中，所述硅基功率MOSFET与所述反向二极管封装在同一个封装体内。The semiconductor power device of claim 1, wherein the silicon-based power MOSFET and the reverse diode are packaged in the same package.
- 如权利要求1所述的半导体功率器件，其中，所述反向二极管为碳化硅SiC肖特基二极管。The semiconductor power device of claim 1, wherein the reverse diode is a silicon carbide (SiC) Schottky diode.
- 如权利要求1所述的半导体功率器件，其中，所述反向二极管为硅基快恢复二极管。The semiconductor power device according to claim 1, wherein the reverse diode is a silicon-based fast recovery diode.
- 如权利要求1所述的半导体功率器件，其中，所述硅基功率MOSFET的二极管正向压降值大于所述反向二极管的正向压降值。The semiconductor power device according to claim 1, wherein the diode forward voltage drop value of the silicon-based power MOSFET is greater than the forward voltage drop value of the reverse diode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210279749.9A CN116827322A (en) | 2022-03-21 | 2022-03-21 | Semiconductor power device |
| CN202210279749.9 | 2022-03-21 |
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| Publication Number | Publication Date |
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| WO2023178864A1 true WO2023178864A1 (en) | 2023-09-28 |
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| CN217037151U (en) * | 2022-03-21 | 2022-07-22 | 苏州东微半导体股份有限公司 | Semiconductor power device |
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2022
- 2022-03-21 CN CN202210279749.9A patent/CN116827322A/en active Pending
- 2022-06-27 WO PCT/CN2022/101533 patent/WO2023178864A1/en unknown
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| CN102918769A (en) * | 2010-06-03 | 2013-02-06 | 松下电器产业株式会社 | Semiconductor device and solid state relay using same |
| JP2016116358A (en) * | 2014-12-16 | 2016-06-23 | 富士電機株式会社 | Semiconductor device and semiconductor package |
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| CN116827322A (en) | 2023-09-29 |
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