CN103325780A - Power integrated circuit - Google Patents
Power integrated circuit Download PDFInfo
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- CN103325780A CN103325780A CN2012100715787A CN201210071578A CN103325780A CN 103325780 A CN103325780 A CN 103325780A CN 2012100715787 A CN2012100715787 A CN 2012100715787A CN 201210071578 A CN201210071578 A CN 201210071578A CN 103325780 A CN103325780 A CN 103325780A
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- integrated circuit
- diode
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- power integrated
- current regulator
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- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a power integrated circuit (power IC). The power integrated circuit belongs to the technical field of constant current diode power devices. The power IC comprises a constant current diode, a withstand voltage diode that is in reverse series connection with the constant current diode, and two pins of an anode pin and a cathode pin, wherein the anode pin is in coupling connection with the withstand voltage diode. The power IC has output characteristics of constant current in forward direction and cut-off in reverse direction, and the operating voltage range is wide. The power IC has only two pins and achieves simple assembly and convenient use.
Description
Technical field
The invention belongs to current regulator diode power device technology field, the power integrated circuit (IC) that relate to a kind of forward constant current, oppositely ends.
Background technology
The current regulator diode power device has the characteristic of output constant current in wider voltage range, and has very high motional impedance, and it is widely used.
Figure 1 shows that the output characteristic curve schematic diagram of existing current regulator diode power device.This current regulator diode is in the situation that the forward voltage bias output current keeps constant substantially, and at forward voltage greater than V
BSituation under hit; This current regulator diode has the forward conduction characteristic that is similar to PN junction in the situation that reverse voltage is setovered, and does not have turn-off characteristic.
Therefore, the current regulator diode of prior art has the characteristic of forward constant current, reverse-conducting, therefore, and the operating voltage range relative narrower; And usually, this current regulator diode all is 3 end pins or the above IC of 3 end pins, therefore, and the external structure relative complex, and be not convenient for the applicable applications of two end pins.
In view of this, be necessary to propose a kind of novel Power IC.
Summary of the invention
One of purpose of the present invention is, proposes a kind of Power IC that has the forward constant current, oppositely ends.
Another purpose of the present invention is, reduces the pin of Power IC and improves its operating voltage range.
For realizing above purpose or other purposes, the invention provides a kind of Power IC (20), it comprises:
Current regulator diode (220),
The withstand voltage diode (210) that is connected with described current regulator diode (220) differential concatenation, and
Two pins of anode pin and negative electrode pin;
Wherein, described anode pin and described withstand voltage diode (210) couple.
According to the Power IC of one embodiment of the invention, wherein, described anode pin is drawn from the anode of described withstand voltage diode (210), and described negative electrode pin is drawn from (220) negative electrode of described current regulator diode.
Preferably, described current regulator diode (220) is formed by the depletion type nmos transistor equivalence, the grid of described depletion type nmos transistor (226) and source electrode (227) are joined together to form the negative electrode of described current regulator diode (220), draw the anode that forms described current regulator diode from the substrate (221) of described depletion type nmos transistor.
Preferably, the low-doped n type semiconductor layer (222) that described depletion type nmos transistor comprises highly doped N-type substrate (221), epitaxial growth forms on described highly doped N-type substrate, be formed on source region (223) and channel region (225) on the described low-doped n type semiconductor layer.
Preferably, the resistivity of described highly doped N-type substrate (221) is less than or equal to 0.004 Ω cm, and the electrical resistivity range of described low-doped n type semiconductor layer (222) is more than or equal to 1 Ω cm and is less than or equal to 5 Ω cm.
Preferably, the reverse breakdown voltage of described withstand voltage diode (210) is more than or equal to 700V.
Preferably, the forward break down voltage (V of described power integrated circuit (20)
B) more than or equal to 100V, the reverse breakdown voltage (V of described power integrated circuit (20)
BR) scope be more than or equal to 700V.
Technique effect of the present invention is that this Power IC has the output characteristic of forward constant current, reverse cut-off, and operating voltage is wide; Simultaneously, only have two pins, assemble simple, easy to use.
Description of drawings
From following detailed description by reference to the accompanying drawings, will make above and other purpose of the present invention and advantage more fully clear, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the output characteristic curve schematic diagram of existing current regulator diode power device.
Fig. 2 is the basic module structural representation according to the Power IC of one embodiment of the invention.
Fig. 3 is the schematic equivalent circuit of Power IC embodiment illustrated in fig. 2.
Fig. 4 is the cross section structure schematic diagram of the device of Power IC embodiment illustrated in fig. 2, and wherein, Fig. 4 (a) is the cross section structure schematic diagram of withstand voltage diode, and Fig. 4 (b) is the cross section structure schematic diagram of depletion type MOS.
Fig. 5 is the output characteristic curve schematic diagram of Power IC shown in Figure 2.
Embodiment
The below introduces is a plurality of some in may embodiment of the present invention, aims to provide basic understanding of the present invention, is not intended to confirm key of the present invention or conclusive key element or limits claimed scope.Easily understand, according to technical scheme of the present invention, do not changing under the connotation of the present invention other implementations that one of ordinary skill in the art can propose mutually to replace.Therefore, following embodiment and accompanying drawing only are the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or be considered as restriction or restriction to technical solution of the present invention.
In the accompanying drawings, for the sake of clarity, exaggerated the thickness in layer and zone, and, because the mellow and full shape facility that waits that etching causes does not illustrate in the accompanying drawings.
In this paper describes, use directional terminology (such as " on ", D score, " bottom surface " and " bottom " etc.) and the various structure embodiment that describe of similar terms represent the direction shown in the accompanying drawing or the direction that can be understood by those skilled in the art.These directional terminology are used for relative description and clarification, rather than the orientation of any embodiment will be limited to concrete direction or orientation.
Figure 2 shows that the basic module structural representation according to the Power IC of one embodiment of the invention.Figure 3 shows that the schematic equivalent circuit of Power IC embodiment illustrated in fig. 2.Figure 4 shows that the cross section structure schematic diagram of the device of Power IC embodiment illustrated in fig. 2, wherein, Fig. 4 (a) is the cross section structure schematic diagram of withstand voltage diode, and Fig. 4 (b) is the cross section structure schematic diagram (perpendicular to the cross section of the source of channel direction) of depletion type MOS.Below in conjunction with Fig. 2 to Fig. 4 the Power IC 20 of the embodiment of the invention is described.
Power IC 20 comprises power model 200, anode pin and negative electrode pin, and it connects respectively anode and the negative electrode of power model 200.In the power model 200, integrally to be encapsulated by current regulator diode 220 and withstand voltage diode 210 to form, in this embodiment, withstand voltage diode 210 is connected in series with current regulator diode 220, wherein, the anode of withstand voltage diode 210 is drawn the anode pin that forms Power IC 20, and the negative electrode of current regulator diode 220 is drawn the negative electrode pin that forms Power IC.
Consult Fig. 3 and Fig. 4, current regulator diode 220 forms (dotted line signal) by depletion type nmos transistor equivalence, and depletion type nmos transistor comprises source region 223 and the channel region 225 of formation on the substrate 221, semiconductor epitaxial layers 222, epitaxial loayer 222 of N+ doping; Particularly, the resistivity of substrate 221 for example is 0.003 Ω cm less than 0.004 Ω cm, and it is specifically as follows the crystal orientation and is the silicon chip of＜100 〉; The resistivity of semiconductor epitaxial layers 222 is lower than the resistivity of substrate 221, and its scope is 1 Ω cm to 5 Ω cm, for example is 3 Ω cm, and it has also namely formed N-semiconductor doping layer 222; Source region 223 composition doping on N-semiconductor doping layer 222 forms the P+ trap and forms, and channel region 225 composition doping on N-semiconductor doping layer 222 forms the N-trap and forms.223 draw source electrode 227 in the source region, and the equivalence that is electrically connected simultaneously of the source electrode 227 of depletion type nmos transistor and grid 226 forms the negative electrode of current regulator diode 220.Simultaneously, draw the anode that forms current regulator diode 220 from the highly doped substrate 221 of depletion type nmos transistor.In the situation that the forward voltage that anode is setovered increases, when current regulator diode 220 increases, the depletion type nmos transistor constant output current.
Connected mode between withstand voltage diode 210 shown in Figure 4 and the depletion type nmos transistor (220) is with reference to shown in Figure 3, and when the two was connected in series, the negative electrode of withstand voltage diode 210 directly connected the anode of depletion type nmos transistor (220); At this moment, the anode pin of power integrated circuit 20 is directly drawn from the anode of withstand voltage diode 210.In other embodiments, withstand voltage diode 210 also can be connected in series at the cathode terminal of depletion type nmos transistor (220), and also, the negative electrode of the current regulator diode that it is equivalent is connected in series the anode of withstand voltage diode 210; At this moment, the negative electrode pin of power integrated circuit 20 is directly drawn from the negative electrode of withstand voltage diode 210.
Can form by the above type of attachment encapsulation between withstand voltage diode 210 and the depletion type nmos transistor (220), thereby, Power IC 20 formed.
Figure 5 shows that the output characteristic curve schematic diagram of Power IC shown in Figure 2.
Consult Fig. 5, withstand voltage diode 210 and current regulator diode (220) can cause the forward output characteristic constant current output of Power IC when connecting, and are reversed cut-off output.Equal V at forward voltage
KThe time, electric current reaches constant output current I
P0.8 times; Equal forward break down voltage V at forward voltage
BThe time, forward breakdown occurs in the electric current fast rise.At reverse voltage less than reverse breakdown voltage V
BRThe time, electric current is 0 substantially, shows as reverse cut-off; Reach V
BRThe time, reverse breakdown occurs.Therefore, this Power IC 20 has the characteristic of forward constant current, reverse cut-off.Current regulator diode 220 adopt as Fig. 4 (b) as described in during structure, it is at 222 formation of the N-of epitaxial loayer semiconductor doping layer, the forward break down voltage V of current regulator diode 220
BRelatively improve, its scope is 100V-150V, for example 130V; In addition, the reverse breakdown voltage V of Power IC 20
BRScope is 700V-900V, and for example, it can be up to 800V.Therefore, the operating voltage of this Power IC is wide, and, two pins (anode pin and negative electrode pin) can only be set, assembling is simple, and is easy to use.
Above example has mainly illustrated Power IC of the present invention.Although only the some of them embodiments of the present invention are described, those of ordinary skills should understand, and the present invention can be within not departing from its purport and scope implements with many other forms.Therefore, the example of showing and execution mode are regarded as illustrative and not restrictive, in the situation that do not break away from such as the defined spirit of the present invention of appended each claim and scope, the present invention may be contained various modifications and replacement.
Claims (7)
1. a power integrated circuit (20) is characterized in that, comprising:
Current regulator diode (220),
The withstand voltage diode (210) that is connected with described current regulator diode (220) differential concatenation, and
Two pins of anode pin and negative electrode pin;
Wherein, described anode pin and described withstand voltage diode (210) couple.
2. power integrated circuit as claimed in claim 1 is characterized in that, described anode pin is drawn from the anode of described withstand voltage diode (210), and described negative electrode pin is drawn from (220) negative electrode of described current regulator diode.
3. power integrated circuit as claimed in claim 1 or 2, it is characterized in that, described current regulator diode (220) is formed by the depletion type nmos transistor equivalence, the grid of described depletion type nmos transistor (226) and source electrode (227) are joined together to form the negative electrode of described current regulator diode (220), draw the anode that forms described current regulator diode from the substrate (221) of described depletion type nmos transistor.
4. power integrated circuit as claimed in claim 3, it is characterized in that, the low-doped n type semiconductor layer (222) that described depletion type nmos transistor comprises highly doped N-type substrate (221), epitaxial growth forms on described highly doped N-type substrate, be formed on source region (223) and channel region (225) on the described low-doped n type semiconductor layer.
5. power integrated circuit as claimed in claim 4, it is characterized in that, the resistivity of described highly doped N-type substrate (221) is less than or equal to 0.004 Ω cm, and the electrical resistivity range of described low-doped n type semiconductor layer (222) is more than or equal to 1 Ω cm and is less than or equal to 5 Ω cm.
6. power integrated circuit as claimed in claim 1 is characterized in that, the reverse breakdown voltage of described withstand voltage diode (210) is more than or equal to 700V.
7. power integrated circuit as claimed in claim 1 is characterized in that, the forward break down voltage (V of described power integrated circuit (20)
B) scope be more than or equal to 100V, the reverse breakdown voltage (V of described power integrated circuit (20)
BR) scope be more than or equal to 700V.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210071578.7A CN103325780B (en) | 2012-03-19 | 2012-03-19 | A kind of power integrated circuit |
| PCT/CN2012/085716 WO2013139140A1 (en) | 2012-03-19 | 2012-12-03 | Power integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210071578.7A CN103325780B (en) | 2012-03-19 | 2012-03-19 | A kind of power integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103325780A true CN103325780A (en) | 2013-09-25 |
| CN103325780B CN103325780B (en) | 2016-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210071578.7A Active CN103325780B (en) | 2012-03-19 | 2012-03-19 | A kind of power integrated circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103325780B (en) |
| WO (1) | WO2013139140A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600126A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | Super-barrier self-bias rectifying diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274414A (en) * | 2000-03-24 | 2001-10-05 | Toshiba Corp | Power semiconductor element and drive method thereof |
| JP2008282878A (en) * | 2007-05-08 | 2008-11-20 | Rohm Co Ltd | Semiconductor device and manufacturing method thereof |
| CN201639832U (en) * | 2010-04-07 | 2010-11-17 | 贵州博越电子科技有限公司 | AC LED driving power-supply structure based on constant-current diode |
| CN201877434U (en) * | 2010-12-01 | 2011-06-22 | 贵州煜立电子科技有限公司 | Vertical channel constant-current diode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005100A (en) * | 2007-01-15 | 2007-07-25 | 贵州大学 | N-channel high power semiconductor constant current diode and its producing method |
| CN201639833U (en) * | 2010-04-07 | 2010-11-17 | 贵州博越电子科技有限公司 | Switch pulse driving circuit structure adopting constant-current diode with control end |
| CN201733479U (en) * | 2010-04-07 | 2011-02-02 | 贵州博越电子科技有限公司 | Circuit for carrying out pulse control on constant current diode to conduct and drive LED to emit light |
-
2012
- 2012-03-19 CN CN201210071578.7A patent/CN103325780B/en active Active
- 2012-12-03 WO PCT/CN2012/085716 patent/WO2013139140A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274414A (en) * | 2000-03-24 | 2001-10-05 | Toshiba Corp | Power semiconductor element and drive method thereof |
| JP2008282878A (en) * | 2007-05-08 | 2008-11-20 | Rohm Co Ltd | Semiconductor device and manufacturing method thereof |
| CN201639832U (en) * | 2010-04-07 | 2010-11-17 | 贵州博越电子科技有限公司 | AC LED driving power-supply structure based on constant-current diode |
| CN201877434U (en) * | 2010-12-01 | 2011-06-22 | 贵州煜立电子科技有限公司 | Vertical channel constant-current diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600126A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | Super-barrier self-bias rectifying diode |
| CN104600126B (en) * | 2013-10-31 | 2017-10-24 | 无锡华润华晶微电子有限公司 | A kind of super barrier automatic biasing commutation diode |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013139140A1 (en) | 2013-09-26 |
| CN103325780B (en) | 2016-12-14 |
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