CN104600126B - A kind of super barrier automatic biasing commutation diode - Google Patents
A kind of super barrier automatic biasing commutation diode Download PDFInfo
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- CN104600126B CN104600126B CN201310537560.6A CN201310537560A CN104600126B CN 104600126 B CN104600126 B CN 104600126B CN 201310537560 A CN201310537560 A CN 201310537560A CN 104600126 B CN104600126 B CN 104600126B
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- super barrier
- commutation diode
- automatic biasing
- barrier automatic
- grid
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- 230000004888 barrier function Effects 0.000 title claims abstract description 77
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000002146 bilateral effect Effects 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of super barrier automatic biasing commutation diode, including：Vertical DMOS device and polycrystalline resistor, wherein, the grid of the vertical DMOS device is connected with source electrode by the polycrystalline resistor.The present invention is connected by the grid of the vertical DMOS device by super barrier automatic biasing commutation diode is formed with source electrode through polycrystalline resistor, utilize the negative feedback of polycrystalline resistor, strengthen control of the grid of vertical DMOS device to raceway groove ducting capacity, so as to realize less reverse leakage.
Description
Technical field
The present invention relates to the present invention relates to technical field of semiconductors, and in particular to power rectifier device technical field, especially
It is related to a kind of super barrier automatic biasing commutation diode.
Background technology
Super barrier Schottky barrier diodes（Super Barrier Rectifier, abbreviation SBR）It is the more commonly used at present
Rectification diode, and again with N-type vertical DMOS（Vertical Double-diffused
Metal Oxide Semiconductor, abbreviation VDMOS）Based on the super barrier Schottky barrier diodes of device formation.Fig. 1
It is the pole of super barrier Schottky rectification two formed by N-type vertical DMOS device according to prior art
The basic circuit diagram of pipe.Referring to Fig. 1, grid 102 and the short circuit of source electrode 103, N-type VDMOS device 101 of N-type VDMOS device 101
Parasitic diode 105 source electrode 103 of N-type VDMOS device 101 104 is connected with drain electrode, also, by N-type VDMOS device 101
Grid 102 draw super barrier Schottky barrier diodes anode PP, by the extraction of the drain electrode 104 of N-type VDMOS device 101
The negative electrode NP of super barrier Schottky barrier diodes.
Due to the grid 102 and source electrode of the N-type VDMOS device that forms super barrier Schottky barrier diodes in the prior art
103 direct short circuits, so ducting capacity control of the grid 102 to the raceway groove of VDMOS device is limited, so as to cause super barrier Xiao Te
The reverse leakage of base commutation diode is relatively large.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of super barrier automatic biasing commutation diode, to solve prior art
The larger technical problem of the reverse leakages of super barrier Schottky barrier diodes.
The embodiments of the invention provide a kind of super barrier automatic biasing commutation diode, including：
Vertical DMOS device and polycrystalline resistor, wherein, the vertical double diffused metal oxidation
The grid of thing semiconductor devices is connected with source electrode by the polycrystalline resistor.
Further, the magnitude of the channel dopant concentration of the vertical DMOS device be more than
Equal to 1013/cm3。
Further, the super barrier automatic biasing commutation diode also includes the first pole and the second pole, wherein, described first
Pole is connected with the grid of the vertical DMOS device, second pole and the vertical double diffusion gold
Belong to the drain electrode connection of oxide semiconductor element.
Further, the vertical DMOS device is N-type vertical bilateral diffusion metallic oxide
Semiconductor devices, the anode of the described first extremely described super barrier automatic biasing commutation diode, the described second extremely described superpotential
Build the negative electrode of automatic biasing commutation diode.
Further, the vertical DMOS device is p-type vertical bilateral diffusion metallic oxide
Semiconductor devices, the negative electrode of the described first extremely described super barrier automatic biasing commutation diode, the described second extremely described superpotential
Build the anode of automatic biasing commutation diode.
Further, the polycrystalline resistor is polysilicon resistance.
The super barrier automatic biasing commutation diode that the embodiment of the present invention is proposed, by the way that super barrier automatic biasing rectification two will be formed
The grid of the VDMOS device of pole pipe is connected with source electrode through polycrystalline resistor, using the negative feedback of polycrystalline resistor, strengthens VDMOS
Control of the grid of device to raceway groove ducting capacity, so as to realize less reverse leakage.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, of the invention is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 is super barrier Xiao formed by N-type vertical DMOS device according to prior art
The basic circuit diagram of special base commutation diode；
Fig. 2 is being formed by N-type vertical DMOS device according to a first embodiment of the present invention
The basic circuit diagram of super barrier automatic biasing commutation diode；
Fig. 3 is being formed by N-type vertical DMOS device according to a first embodiment of the present invention
The domain schematic diagram of super barrier automatic biasing commutation diode.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that, in order to just
Part related to the present invention rather than full content are illustrate only in description, accompanying drawing.
At present, it is most widely used to belong to N-type VDMOS device in VDMOS device.Herein just with N-type VDMOS device
The super barrier automatic biasing commutation diode of formation is as specific embodiment, to explain the present invention.It should be noted that the present invention is not
It is limited to the super barrier automatic biasing commutation diode of N-type VDMOS device formation, for the super barrier self-bias of p-type VDMOS device formation
Commutation diode is put, the present invention is equally applicable.
The first embodiment of the present invention is shown in figs. 2 and 3.
Fig. 2 is being formed by N-type vertical DMOS device according to a first embodiment of the present invention
The basic circuit diagram of super barrier automatic biasing commutation diode.As shown in Fig. 2 the super barrier automatic biasing commutation diode（Super
Barrier Rectifier Self Bias, abbreviation SBRSB）Including：N-type vertical DMOS device
201 and polycrystalline resistor 202, wherein, the grid 203 and source electrode of the N-type vertical DMOS device 201
204 are connected by the polycrystalline resistor 202.
In the present embodiment, the super barrier automatic biasing commutation diode also includes the first pole and the second pole, wherein, it is described
First extremely anode PP, the anode PP and the N-type vertical DMOS device grid 203 connects
Connect, the second pole NP is negative electrode NP, the negative electrode NP and the N-type vertical DMOS device leakage
Pole 205 is connected.
In addition, with reference to Fig. 2, parasitic two pole in the N-type vertical DMOS device 201
Pipe 206 connects the source electrode 204 of the N-type vertical DMOS device 201 with drain electrode 205.
Fig. 3 is being formed by N-type vertical DMOS device according to a first embodiment of the present invention
The domain schematic diagram of super barrier automatic biasing commutation diode.Reference picture 3, is produced on many by the grid 302 of N-type VDMOS device
Brilliant resistance 303 connects the grid 302 of N-type VDMOS device and source electrode 301, and is used as superpotential from the extraction pin of grid 302
Build the anode 304 of automatic biasing commutation diode；The back side of the drain electrode of N-type VDMOS device paper where Fig. 3, therefore do not show
Show to come, pin is drawn as the negative electrode of super barrier automatic biasing commutation diode from the drain electrode.
The present embodiment it is a kind of preferred embodiment in, the polycrystalline resistor 202 be polysilicon resistance.Use polysilicon
To make polycrystalline resistor, manufacture craft is simple, and cost is very low, while can realize the present embodiment technology to be reached effect again
Really.Referring to Fig. 2, polycrystalline resistor 202 connects N-type VDMOS grid 203 and source electrode 204, because polycrystalline resistor is with temperature
Degree increase, its resistance value, which has, significantly to be increased, therefore, in use, when temperature change of the polycrystalline resistor 202 with chip
When its resistance changes, by the negative feedback of polycrystalline resistor 202, the magnitude of voltage on grid 203 can be adjusted, so as to increase
Strong control of the grid 203 to raceway groove ducting capacity so that super barrier Xiao of super barrier automatic biasing commutation diode and prior art
Special base commutation diode is compared, with smaller reverse leakage.Furthermore, it is possible to as needed, appropriate mix be carried out to polycrystalline resistor
It is miscellaneous, to improve the sensitivity of polycrystalline resistor negative feedback.
When making super barrier automatic biasing commutation diode, integrated circuit can be used（Integrated Circuit, referred to as
IC）The function of negative-feedback is realized instead of polycrystalline resistor.But it is due to that the device that integrated circuit is included is more, designs ratio
More complicated, manufacture difficulty is larger, and cost is higher, so selecting polycrystalline resistor to make the pole of super barrier automatic biasing rectification two
Pipe, is more preferably embodiment.
The super barrier automatic biasing commutation diode that first embodiment of the invention is proposed, it is whole by the way that super barrier automatic biasing will be formed
The grid for flowing the N-type VDMOS device of diode is connected with source electrode through polycrystalline resistor, using the negative feedback of polycrystalline resistor, is increased
Control of the grid of strong N-type VDMOS device to raceway groove ducting capacity, so as to realize less reverse leakage.
Second embodiment of the invention.
Second embodiment of the invention is the super barrier self-bias formed by N-type VDMOS device in first embodiment of the invention
Put on the basis of commutation diode, further, the N-type VDMOS device of super barrier automatic biasing commutation diode is formed in making
When, add channel dopant concentration.Wherein, channel dopant concentration is added can be understood as：With the formation superpotential of prior art
The channel dopant concentration for building the N-type VDMOS device of Schottky barrier diodes is compared, and adds to form super barrier automatic biasing rectification
The channel dopant concentration of the N-type VDMOS device of diode, be specially：The pole of formation super barrier Schottky rectification two of prior art
The magnitude of the channel dopant concentration of the N-type VDMOS device of pipe is 1012/cm3, and the formation super barrier automatic biasing of the present embodiment is whole
The magnitude for flowing the channel dopant concentration of the N-type VDMOS device of diode is more than or equal to 1013/cm3.From data above contrast
It is seen that, the channel dopant concentration of the N-type VDMOS device of the formation super barrier automatic biasing commutation diode of the present embodiment is than existing
The channel dopant concentration for having the N-type VDMOS device of the formation super barrier Schottky barrier diodes of technology up to reduces in magnitude
An order of magnitude is added.Advantage of this is that so that the super barrier automatic biasing commutation diode formed is in equal forward direction pressure
Electric conduction rheology is big during drop, ducting capacity enhancing.Therefore, in the case of identical conducting electric current is produced, super barrier automatic biasing is whole
Forward voltage drop needed for flowing diode is lower than the forward voltage drop needed for the super barrier Schottky barrier diodes of prior art.
Due to the doping concentration of the above-mentioned raceway groove for adding N-type VDMOS device so that super barrier automatic biasing commutation diode
With relatively low forward voltage drop, but also its reverse leakage can simultaneously increased.Super barrier is formed according to a first embodiment of the present invention
The negative feedback of polycrystalline resistor is introduced between the grid and source electrode of the N-type VDMOS device of automatic biasing commutation diode so that institute's shape
Into super barrier automatic biasing commutation diode reverse leakage reduce.Because the present embodiment is using first embodiment of the invention as base
Plinth, adds the channel dopant concentration for the N-type VDMOS device to form super barrier automatic biasing commutation diode, therefore, it can pass through
The resistance value of polycrystalline resistor is adjusted, increases the negative feedback of polycrystalline resistor, so that super barrier in the present embodiment is certainly
The reverse leakage of biased rectifier diodes is smaller than the reverse leakage of the super barrier Schottky barrier diodes of prior art.
The super barrier automatic biasing commutation diode that second embodiment of the invention is proposed, super barrier automatic biasing is formed by increase
The channel dopant concentration of the N-type VDMOS device of commutation diode, it is possible to achieve relatively low forward voltage drop；By the way that superpotential will be formed
The grid for building the N-type VDMOS device of automatic biasing commutation diode is connected with source electrode through polycrystalline resistor, utilizes the negative anti-of polycrystalline resistor
Feedback is acted on, and strengthens control of the grid of N-type VDMOS device to raceway groove ducting capacity, so as to realize less reverse leakage.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art it is various it is obvious change,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although the present invention is carried out by above example
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (5)
1. a kind of super barrier automatic biasing commutation diode, it is characterised in that including：
Vertical DMOS device and polycrystalline resistor, wherein, the vertical bilateral diffusion metallic oxide half
The grid of conductor device is connected with source electrode by the polycrystalline resistor；
The polycrystalline resistor is doped polycrystalline silicon resistor；The polycrystalline resistor is set with the grid with layer.
2. super barrier automatic biasing commutation diode according to claim 1, it is characterised in that the vertical double diffused metal
The magnitude of the channel dopant concentration of oxide semiconductor element is more than or equal to 1013/cm3。
3. super barrier automatic biasing commutation diode according to claim 1, it is characterised in that the super barrier automatic biasing is whole
Flowing diode also includes the first pole and the second pole, wherein, first pole and the vertical DMOS
The grid connection of device, second pole is connected with the drain electrode of the vertical DMOS device.
4. super barrier automatic biasing commutation diode according to claim 3, it is characterised in that the vertical double diffused metal
Oxide semiconductor element is N-type vertical DMOS device, and the described first extremely described super barrier is certainly
The anode of biased rectifier diodes, the negative electrode of the described second extremely described super barrier automatic biasing commutation diode.
5. super barrier automatic biasing commutation diode according to claim 3, it is characterised in that the vertical double diffused metal
Oxide semiconductor element is p-type vertical DMOS device, and the described first extremely described super barrier is certainly
The negative electrode of biased rectifier diodes, the anode of the described second extremely described super barrier automatic biasing commutation diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310537560.6A CN104600126B (en) | 2013-10-31 | 2013-10-31 | A kind of super barrier automatic biasing commutation diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310537560.6A CN104600126B (en) | 2013-10-31 | 2013-10-31 | A kind of super barrier automatic biasing commutation diode |
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| CN104600126A CN104600126A (en) | 2015-05-06 |
| CN104600126B true CN104600126B (en) | 2017-10-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353863A (en) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | Super-self-aligned trench-gate DMOS with reduced on-resistance |
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| CN102110687A (en) * | 2009-12-24 | 2011-06-29 | 上海华虹Nec电子有限公司 | Trench MOS (metal-oxide semiconductor) device |
| CN102254944A (en) * | 2010-05-21 | 2011-11-23 | 上海新进半导体制造有限公司 | Power metal oxide semiconductor field effect transistor (MOSFET) power rectification device and manufacturing method |
| CN102386099A (en) * | 2010-08-30 | 2012-03-21 | 英飞凌科技奥地利有限公司 | Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode |
| CN102709331A (en) * | 2011-05-30 | 2012-10-03 | 朱江 | Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof |
| CN103325780A (en) * | 2012-03-19 | 2013-09-25 | 无锡华润华晶微电子有限公司 | Power integrated circuit |
| CN103325839A (en) * | 2013-06-26 | 2013-09-25 | 张家港凯思半导体有限公司 | MOS super barrier rectifier device and manufacturing method thereof |
| CN103337523A (en) * | 2013-06-19 | 2013-10-02 | 张家港凯思半导体有限公司 | Super potential barrier rectification device with inclined grooves, and manufacturing method thereof |
-
2013
- 2013-10-31 CN CN201310537560.6A patent/CN104600126B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353863A (en) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | Super-self-aligned trench-gate DMOS with reduced on-resistance |
| CN101409444A (en) * | 2007-10-11 | 2009-04-15 | 和舰科技(苏州)有限公司 | Method for improving ESD protection device uniform conduction |
| CN102110687A (en) * | 2009-12-24 | 2011-06-29 | 上海华虹Nec电子有限公司 | Trench MOS (metal-oxide semiconductor) device |
| CN101853850A (en) * | 2010-03-17 | 2010-10-06 | 无锡新洁能功率半导体有限公司 | Super barrier semiconductor rectifying device and manufacture method thereof |
| CN102254944A (en) * | 2010-05-21 | 2011-11-23 | 上海新进半导体制造有限公司 | Power metal oxide semiconductor field effect transistor (MOSFET) power rectification device and manufacturing method |
| CN102386099A (en) * | 2010-08-30 | 2012-03-21 | 英飞凌科技奥地利有限公司 | Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode |
| CN102709331A (en) * | 2011-05-30 | 2012-10-03 | 朱江 | Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof |
| CN103325780A (en) * | 2012-03-19 | 2013-09-25 | 无锡华润华晶微电子有限公司 | Power integrated circuit |
| CN103337523A (en) * | 2013-06-19 | 2013-10-02 | 张家港凯思半导体有限公司 | Super potential barrier rectification device with inclined grooves, and manufacturing method thereof |
| CN103325839A (en) * | 2013-06-26 | 2013-09-25 | 张家港凯思半导体有限公司 | MOS super barrier rectifier device and manufacturing method thereof |
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