CN103310907B - The manufacture method of conductive material and conductive material - Google Patents
The manufacture method of conductive material and conductive material Download PDFInfo
- Publication number
- CN103310907B CN103310907B CN201310079062.1A CN201310079062A CN103310907B CN 103310907 B CN103310907 B CN 103310907B CN 201310079062 A CN201310079062 A CN 201310079062A CN 103310907 B CN103310907 B CN 103310907B
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- China
- Prior art keywords
- conductive material
- silver
- pattern
- silver halide
- layer
- Prior art date
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- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- KIFRXNRJENTHJE-UHFFFAOYSA-N SN1NC(=CC(=N1)S)CC1=CC=CC=C1 Chemical compound SN1NC(=CC(=N1)S)CC1=CC=CC=C1 KIFRXNRJENTHJE-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- XEIPQVVAVOUIOP-UHFFFAOYSA-N [Au]=S Chemical compound [Au]=S XEIPQVVAVOUIOP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- 239000001785 acacia senegal l. willd gum Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229960000686 benzalkonium chloride Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000010980 cellulose Nutrition 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- OIDPCXKPHYRNKH-UHFFFAOYSA-J chrome alum Chemical compound [K]OS(=O)(=O)O[Cr]1OS(=O)(=O)O1 OIDPCXKPHYRNKH-UHFFFAOYSA-J 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N dimethylamine hydrochloride Natural products CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- IQDGSYLLQPDQDV-UHFFFAOYSA-N dimethylazanium;chloride Chemical compound Cl.CNC IQDGSYLLQPDQDV-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 235000019820 disodium diphosphate Nutrition 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- GYQBBRRVRKFJRG-UHFFFAOYSA-L disodium pyrophosphate Chemical compound [Na+].[Na+].OP([O-])(=O)OP(O)([O-])=O GYQBBRRVRKFJRG-UHFFFAOYSA-L 0.000 description 1
- AFOSIXZFDONLBT-UHFFFAOYSA-N divinyl sulfone Chemical compound C=CS(=O)(=O)C=C AFOSIXZFDONLBT-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910001502 inorganic halide Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- JGEMYUOFGVHXKV-UPHRSURJSA-N malealdehyde Chemical compound O=C\C=C/C=O JGEMYUOFGVHXKV-UPHRSURJSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 1
- 235000019799 monosodium phosphate Nutrition 0.000 description 1
- ZAKLKBFCSHJIRI-UHFFFAOYSA-N mucochloric acid Natural products OC1OC(=O)C(Cl)=C1Cl ZAKLKBFCSHJIRI-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- DJEHXEMURTVAOE-UHFFFAOYSA-M potassium bisulfite Chemical compound [K+].OS([O-])=O DJEHXEMURTVAOE-UHFFFAOYSA-M 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- LWIHDJKSTIGBAC-UHFFFAOYSA-K potassium phosphate Substances [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 1
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- KVMLCRQYXDYXDX-UHFFFAOYSA-M potassium;chloride;hydrochloride Chemical compound Cl.[Cl-].[K+] KVMLCRQYXDYXDX-UHFFFAOYSA-M 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003283 rhodium Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 235000010413 sodium alginate Nutrition 0.000 description 1
- 239000000661 sodium alginate Substances 0.000 description 1
- 229940005550 sodium alginate Drugs 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000003475 thallium Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0036—Details
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing Of Electric Cables (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Non-Insulated Conductors (AREA)
- Materials For Photolithography (AREA)
Abstract
The present invention provides to comprise and is utilized by the conductive material with supporting mass and silver-colored pattern that thickness formed thereon is below 0.3 μm at the manufacture method of conductive material of the operation that intramolecular has a triazine of sulfydryl of more than 2 or its derivant carries out processing and the conductive material that utilizes this manufacture method to obtain.Utilize the present invention, it is provided that the manufacture method of following conductive material, i.e. can obtain improving the conductive material of the deviation of the electric conductivity of the poor flow of electrode and each electrode, may be provided for improving the conductive material of these problems in addition.
Description
Technical field
The present invention relates to may be used for manufacture method and the conductive material of the conductive material in the purposes such as circuit, electromagnetic shielding material, touch panel.
Background technology
In recent years, in the purposes such as circuit, electromagnetic shielding material, touch panel, the demand of conductive material promptly increases.
In this kind of conductive material, such as the method forming circuit pattern etc., it is known to following method etc..One method is following method, i.e., 1) on the supporting mass being coated to by conductive materials such as silver, copper, gold, ITO, stannum oxide, 2) photosensitive layer containing photoetching colloids such as photoresists is set, 3) on this photosensitive layer, the mask of required pattern is covered and irradiation ultraviolet radiation etc., 4) photoetching colloid is made to solidify, 5) after removing the uncured portion of this photosensitive layer, 6) the conductive material part utilizing chemical etching etc. to expose is removed and forms circuit (subtractive process).One method is following method, i.e., 1) additional electroless plating catalyst on supporting mass, 2) on this electroless plating catalyst coating photoresist agent and photosensitive layer is set, the photosensitive layer in uncured portion is removed after exposed and developed, 3) photosensitive layer (plating resist agent) (fully-additive process) of solidified portion the electroless plating catalyst that exposes is implemented electroless plating and form conductive pattern, 4) is removed.One method is following method, i.e., 1) additional electroless plating catalyst on supporting mass, implement electroless plating, 2) coating photoresist agent and photosensitive layer is set, remove the photosensitive layer in uncured portion after exposed and developed, 3) the electroless plating portion exposed is implemented electrolysis plating and forms conductive pattern, 4) photosensitive layer (plating resist agent) of solidified portion is peeled off etc. and removed (semi-additive process).
Additionally, as the easy manufacture method forming circuit pattern etc., it is known to following method, i.e., by utilizing the type metal unguentum such as silk screen print method or ink jet printing method on supporting mass, followed by heating and by sintering etc. such as the adhesive ingredients contained by metal unguentum.It addition, it is known that following method, i.e. utilize silk screen print method or ink jet printing method etc. to be printed on supporting mass the unguentum containing electroless plating catalyst, implement thereafter electroless plating.
For the conductive material used in electromagnetic shielding material, touch panel etc., it is desirable to light transmission rate is high.As the supporting mass of this kind of conductive material, use photopermeability supporting mass.Known by photopermeability supporting mass, such as, form metal fine with mesh pattern shape in this case, adjust live width or spacing and the pattern form etc. of metal fine, high conductivity can be given while maintaining high light transmission rate.
About the shape of metal fine mesh pattern, introduced various pattern.In Japanese Unexamined Patent Publication 10-41682 publication, it is disclosed following pattern, i.e., it is the decorative pattern that equilateral triangle, isosceles triangle, right angled triangle equilateral triangle, square, rectangle, rhombus, parallelogram, (just) n dihedral, circle, ellipse, the stars such as quadrangle, (just) hexagon, (just) octagonal, (just) dodecagon, (just) icosagon such as trapezoidal are formed by combining, is individually repeating or combination pattern of more than two kinds of these units.In the middle of these patterns, use the pattern of square, rhombus, parallelogram and regular hexagon more.
Metal fine typically, for these screening patterns, it is contemplated that the observability of metal fine, electric conductivity, photopermeability etc., generally uses the thickness that has live width about 1～50 μm, 1～50 about μm, uniform as far as possible metal fine.For spacing, it is set as about 100～1000 μm.For fine rule width or the spacing of screening pattern, suitably adjust according to respective purposes.
In the middle of the metal forming circuit or mesh pattern, silver is the highest due to electric conductivity, therefore compared with other metal, can obtain high conductivity by fine rule less with width, that thickness is thinner.If live width is little, then the aspect in the observability (difficult observability) of photopermeability or pattern is favourable.If it addition, the thickness of pattern lines is thin, then easily various to adhesive layer or hard conating etc. functional layer are arranged on pattern.Such as, by the 2 coherent touch sensors of plate electrode or electromagnetic shielding film of being fitted on glass pane etc. etc., adhesive layer is set in the face of metal pattern side.In the case of Gai, the thickness of metal pattern be the thinnest, then the fewest by being mixed into of the concavo-convex air caused, and fits the most equably.Thus, the thickness of metal pattern is thin is big advantage.Like this, for having the expectation raising of the conductive material of silver-colored pattern.
As the method forming silver pattern on supporting mass, there are foregoing subtractive process, fully-additive process and silk screen print method.Additionally, such as can with use as disclosed in No. 04/007810 pamphlet of International Publication as the silver salt diffusion transfer mode that employs and as disclosed in Japanese Unexamined Patent Publication 2004-221564 publication as utilize chemical development silver use light sensitive silver halide method.
On the other hand, the circuit pattern utilizing silver pattern to be formed easily produces migration.As preventing the technology of these problems, cross benzotriazole, benzotriazole derivatives, the technology adsorbed as metal ion trapping agent containing sulfydryl based compound disclosed in Japanese Unexamined Patent Publication 2009-188360 publication (patent documentation 1).Additionally, as the anti-blushing agent of silver, disclosed in Japanese Unexamined Patent Publication 2007-88218 publication (patent documentation 2), mistake utilizes organic thiol based compound to prevent the technology of variable color to metallic silver portion is implemented argent obtained by physical development or plating process.
Prior art literature
Patent documentation
Patent documentation 1 Japanese Unexamined Patent Publication 2009-188360 publication
Patent documentation 2 Japanese Unexamined Patent Publication 2007-88218 publication
Even if the width of silver-colored pattern fine rule obtained as indicated above is little or thickness is thin, high conductivity can also be obtained, but in the case of below thickness for example, 0.3 μm of fine rule, have in manufacturing process or during the disposal of goods or when the use of goods it some times happens that the problem of unexpected broken string.Such as, if the transparency electrode as touch sensor uses the argent pattern obtained in silver salt diffusion transfer mode, then just using central, it some times happens that break unexpectedly when fitting together between using electrode or as touch sensor.Thus, the situation of the deviation of the poor flow of generation electrode or the electric conductivity of each electrode is just had, it is desirable to improved.In patent documentation 1 and 2, although be related to migrate or the record prevented of variable color, but not about the unexpected concept broken or the description of silver picture pattern.
Summary of the invention
It is an object of the invention to, it is provided that the manufacture method of a kind of conductive material, it can obtain the conductive material of deviation of the electric conductivity improving the poor flow of electrode and each electrode, further, it would be desirable to provide improve the conductive material of these problems.
For solving the approach of problem
The problems referred to above of the present invention can utilize invention below to realize.
(1) manufacture method of a kind of conductive material, including being utilized by the conductive material with supporting mass and silver-colored pattern that thickness formed thereon is below 0.3 μm in the operation that intramolecular has a triazine of sulfydryl of more than 2 or its derivant carries out processing.
(2) manufacture method of the conductive material recorded according to above-mentioned (1), wherein, the live width of described silver pattern is below 20 μm.
(3) according to the manufacture method of the conductive material described in above-mentioned (1) or (2), wherein, described silver pattern is the silver-colored pattern utilizing the method using silver salt diffusion transfer mode to obtain.
(4) according to the manufacture method of the conductive material recorded any one of above-mentioned (1)～(3), wherein, also include carrying out the operation that the half breadth at the peak by 2 θ=38.2 ° in the X-ray diffraction method of silver pattern is set to the post processing of less than 0.41.
(5) a kind of conductive material, utilizes the manufacture method of the conductive material recorded any one of above-mentioned (1)～(4) to obtain.
According to the present invention, the manufacture method of a kind of conductive material can be provided, even if the thickness of metal pattern is thin, it is also possible to obtain improve the conductive material of the deviation of the electric conductivity of the poor flow of electrode, each electrode, may be provided for improving the conductive material of these problems in addition.
Accompanying drawing explanation
Fig. 1 is the electrode pattern used in embodiment.
Wherein, a. silver mesh pattern portion (conductive part), b. electrode terminal section, the non-image portion of c. (non-conductive portion)
Detailed description of the invention
The conductive material utilizing the present invention to obtain has supporting mass and silver-colored pattern formed thereon.As an example of conductive material, the conductive material with photopermeability depicting silver with mesh pattern shape on supporting mass, the circuit etc. being made up of the conductive material drawing out wiring part with argent can be enumerated.
As the supporting mass used in the present invention, such as, can enumerate the thin film being made up of various resinaes, various glass, paper, non-woven fabrics, cloth, various metal, various potteries etc..As various resinaes, acrylic resin, cellophane, nylon, polystyrene resin, the ABS resin etc. such as the vinyl chloride-based resin such as the polyolefin-based resins such as polyethylene polypropylene, polrvinyl chloride vinyl chloride copolymer, epoxy resin, polyarylate, polysulfones, polyether sulfone, polyimides, fluororesin, phenoxy resin, tri acetyl cellulose, polyethylene terephthalate, polyimides, polyphenylene sulfide, PEN, Merlon, polymethyl methacrylate can be enumerated.As various glass, quartz glass, alkali-free glass, crystallization clear glass, Pyrex (registered trade mark) etc. can be enumerated.
In the case of the conductive material of the present invention is the conductive material with photopermeability, supporting mass used is preferably photopermeability supporting mass.Total light penetration of photopermeability supporting mass is preferably more than 80%, and more preferably more than 85%.As the example of photopermeability supporting mass, such as, can enumerate the thin film and various glass being made up of above-mentioned various resinaes.
The method forming silver pattern on supporting mass is illustrated.In the present invention, various method can be used for forming the method for silver pattern on supporting mass.As the example of the method, there is the silver salt mode etc. of mode of printing, photolithographicallpatterned, use light sensitive silver halide.
As mode of printing, such as, can use: as disclosed in Japanese Laid-Open Patent Publication 55-91199 publication, metal silver inks liquid or unguentum are utilized the method printings such as silk screen printing after, the method the adhesive ingredients that they are contained burnt till in order to give electric conductivity；And as disclosed in No. 04/39138 pamphlet of International Publication, rear at the printing cold coating etc. containing electroless plating catalyst, to implement non-electrolytic silver-plated and give the method etc. of conductive pattern.
In photolithographicallpatterned, can use and take following manner etc., i.e. subtract into mode, on the supporting mass with uniform metallic silver layer coating photoresist, expose, develop after, the metallic silver layer exposed by stripping photoresist etching is removed and obtains conductive pattern；And the addition mode as disclosed in Japanese Unexamined Patent Publication 11-170421 publication, photoresist containing electroless plating catalyst is coated on substrate, exposes, develops, after removing the photoresist in unexposed portion, obtain conductive pattern by the electroless plating catalysing area exposed carries out non-electrolytic silver-plated.
As use light sensitive silver halide silver salt mode, it is possible to use the silver salt diffusion transfer mode that employs as disclosed in No. 04/007810 pamphlet of International Publication, Japanese Unexamined Patent Publication 2003-77350 publication, Japanese Unexamined Patent Publication 2005-250169 publication and Japanese Unexamined Patent Publication 2007-188655 publication and as disclosed in No. 2001/51276 pamphlet of International Publication and Japanese Unexamined Patent Publication 2004-221564 publication utilize chemical development silver.
The mode using chemical development silver is such a way, i.e., so that the silver halide at the position exposed can utilize the chemical development silver (silver pattern) of the development host reduction being present in developer solution, as catalyst core, be set to electric conductivity by this chemical development silver portion is implemented electroless plating.
The mode using silver salt diffusion transfer mode is such a way, that is, use has supporting mass, formed thereon reducing for host of silver complex utilization being developed and become the catalyst stratum nucleare (referred to as physical development nucleus layer) of argent and the material of the silver halide emulsion layer of layer formed thereon.And, silver halide emulsion layer can also be coated with to be located on other supporting mass.Use above-mentioned material is exposed, followed by development treatment.When development treatment, make the developer solution generation effect possibly together with the compound (ag halide solvent) dissolving silver halide in addition to development host.When this material is exposed and is developed, in the case of silver halide emulsion layer contains the silver halide emulsion particles of minus, the silver halide emulsion particles of exposure portion is just reduced to chemical development silver, stays in silver halide emulsion layer.On the other hand, the silver halide emulsion particles in unexposed portion is dissolved by the ag halide solvent in above-mentioned developer solution and becomes silver complex.The physical development nucleus layer that this silver complex moves, is diffused on supporting mass, by being reduced by the development host in developer solution in this place, and separates out the argent of electric conductivity.That is, the silver halide emulsion layer after development treatment there is the silver halide emulsion layer of the chemical development silver comprising exposure position and the silver halide in unexposed portion move, spread after silver halide emulsion layer.Thereafter, the silver halide emulsion layer after this development treatment is removed by washing away, and exposes the argent of electric conductivity.And, the silver halide emulsion layer after development treatment contains silver halide emulsion particles the most veritably, but in the present invention for convenience, calls for silver halide emulsion layer.
Supporting mass is formed in the middle of the method for silver pattern, from the standpoint of can easily and stably manufacturing the uniform argent Thinfilm pattern that thickness is below 0.3 μm, particularly preferred silver salt diffusion transfer mode.The silver-colored pattern utilizing silver salt diffusion transfer mode to make the most only is formed pattern by argent.Thus, it is possible to easily and stably manufacture the uniform silver pattern that thickness is below 0.3 μm.Even if it addition, thickness is thin can also obtain high conductivity below 0.3 μm.If the membrane thickness unevenness of silver pattern, then having the situation of the conductive material that cannot obtain stable performance, the thickness of silver pattern is the thinnest, then this phenomenon is the most obvious.
Such as by the 2 coherent touch sensors of plate electrode, electromagnetic shielding film of being fitted on glass pane etc. etc., in the case of the face of metal pattern side arranges adhesive layer, the thickness of metal pattern is the thinnest, then the fewest by being mixed into of the concavo-convex air caused, the easiest fit equably.Thus, in the conductive material of the present invention, the thickness of silver pattern is preferably below 0.3 μm.In order to reach the observability (difficult observability) of require in touch panel sensor electrode etc., high light transmission rate and low silver-colored pattern, preferably by live width and the thread pattern (such as mesh pattern) that spacing is 100～1000 μm of 1～50 μm.In the present invention, the live width of silver pattern is preferably below 20 μm.To use the silver-colored pattern that obtains of method of silver salt diffusion transfer mode uniformly and fine.Thus, silver salt diffusion transfer mode is suitable for the situation of the thread pattern that requirement live width is below below 20 μm, more preferably 15 μm.
On the other hand, with use silver-colored pattern that the method for silver salt diffusion transfer mode obtains owing to not strengthening with binding agent etc., therefore in manufacturing process, be currently in use in the disposal of goods or as goods in the middle of, it some times happens that break unexpectedly.The thickness of the silver-colored pattern drawn is the thinnest, then this phenomenon is the most obvious.
In the manufacture method of conductive material and conductive material of the present invention, for the silver salt diffusion transfer mode as the most preferred method forming silver pattern on supporting mass, describe in detail as follows.
As the representational form of method utilizing silver salt diffusion transfer mode to form silver pattern on supporting mass, the developer solution made containing soluble silver salt forming agent and reducing agent can be enumerated and act on the conductive material presoma at least with supporting mass, physical development nucleus layer formed thereon and silver halide emulsion layer formed thereon, and on supporting mass, form the form of silver pattern.And, should on supporting mass formed silver pattern form be following detailed description carry out DM conductive material before treatment.
The conductive material presoma used in the present invention at least has supporting mass, physical development nucleus layer formed thereon and silver halide emulsion layer formed thereon.The supporting mass that this conductive material presoma is had becomes the supporting mass that the conductive material of the present invention is had.Conductive material presoma can also have the layer containing gelatin etc. as the prime coat between supporting mass and physical development nucleus layer.Additionally, conductive material presoma can also have non-photosensitive layer as the prime coat between the intermediate layer between the outermost layer farthest from supporting mass and/or physical development nucleus layer and silver halide emulsion layer or supporting mass and physical development nucleus layer.It addition, conductive material presoma can also have back coating in the another side side of the supporting mass being not provided with physical development nucleus layer etc..
The physical development nucleus layer of conductive material presoma contains physical development nuclei.As this physical development nuclei, use the microgranule (particle size is 1～tens of about nm) being made up of heavy metal or its sulfide.As the concrete example of physical development nuclei, the such as metallic colloid that can enumerate gold, silver etc. or the metal sulfide etc. that the water-soluble metal salt of palladium, zinc etc. and sulfide are mixed.Physical development nucleus layer containing these physical development nucleis can utilize rubbing method or impregnating process to be located on supporting mass.On this supporting mass, it is also possible to prime coat is set.From the standpoint of production efficiency, rubbing method is preferably used.The content of the physical development nuclei in physical development nucleus layer is suitably for every 1m with solid component meter2Have 0.1～about 10mg.
The physical development nucleus layer of conductive material presoma can also contain water-soluble high-molecular compound.Addition during use water-soluble high-molecular compound is about 0～500 mass % preferably with respect to the amount of physical development nuclei.As water-soluble high-molecular compound, it is possible to use arabic gum, cellulose, sodium alginate, polyvinyl alcohol, polyvinyl pyrrolidone, polymine, polyacrylamide, acrylamide and the copolymer etc. of vinyl imidazole.
The physical development nucleus layer of conductive material presoma can also contain cross-linking agent.As this cross-linking agent, such as can use the inorganic compound of chrome alum chromalum etc, formaldehyde, single aldehydes of acrylic aldehyde etc, Biformyl, malealdehyde, glutaraldehyde, 3-methylpent dialdehyde, butanedial, the twain-aldehyde compounds such as hexandial, the N-methylol compound such as carbamide or ethylene urea, mucochloric acid, 2, 3-dihydroxy-1, the aldehyde equivalent of 4-dioxane etc, 2, 4-dichloro-6-hydroxy-s-triazine salt, 2, the compound of the active halogen of 4-dihydroxy-6-chloro-triazine salt etc, divinylsulfone, divinyl ketone, N, N, N-triacryl Hexahydrotriazine, there is aziridinyl and/or the compounds of epoxy radicals of the three-membered ring as activity of more than two in the molecule, and as the one of the various compounds such as dialdehyde starch of macromolecule hardener or more than two kinds.In the middle of cross-linking agent, the preferably twain-aldehyde compound such as Biformyl, glutaraldehyde, 3-methylpent dialdehyde, butanedial, hexandial, preferred cross-linking agent is glutaraldehyde.The amount of the cross-linking agent in physical development nucleus layer is 0.1～30 mass % preferably with respect to the amount of water-soluble high-molecular compound contained in physical development nucleus layer, particularly preferably 1～20 mass %.
In above-mentioned rubbing method, physical development nucleus layer such as can utilize the coating method such as dip-coating, slope flow coat cloth, showering, rod painting, airblade coating, roller coat, intaglio plate coating, spraying to be coated with.
Above-mentioned conductive material presoma has silver halide emulsion layer as optical sensor.Silver halide emulsion layer contains silver emulsion.Silver emulsion is the suspended Emulsion having silver halide particle in aqueous gelatin solution.Relate to technology used in the silver salt photo film of silver halide, photographic paper, halftone screen thin film, photomask emulsion mask etc. can also use the most in the present invention.And, in the present invention, the silver emulsion contained by silver halide emulsion layer is not necessarily negative photonasty, as required, it is also possible to be set to the direct contrast emulsion with positive photosensitive.About direct contrast emulsion, it is possible to use the method described in Japanese Unexamined Patent Publication 8-17120 publication, identical Japan flat 8-202041 publication makes.
During the formation of the silver halide particle contained in silver halide emulsion layer, it is possible to use along the known method as described in mixing, inverse mixed conjunction, simultaneously mixing etc., ResearchDisclosureItem17643 (in December, 1978) and 18716 (in November, 1979), 308119 (in Decembers, 1989).Wherein, from the standpoint of obtaining the silver halide particle that particle diameter has been unified, it is preferably used as a kind of mixing method simultaneously and by so-called double note control methods certain for the pAg holding in the liquid phase forming particle.In the conductive material presoma of the present invention, the mean diameter of preferred silver halide particle is below 0.25 μm, more preferably 0.05～0.2 μm.As the halogenide composition of silver emulsion used in the present invention, preferably comprising the chloride of 80 moles of more than %, more preferably 90 moles more than % are chloride.
In the manufacture of silver emulsion, sulphite, lead salt, thallium salt, rhodium salt or its complex salt, iridium salt or its complex salt and the salt of group VIII metal element or its complex salt can also be made to coexist during the formation of silver halide particle or physics maturation as required.Alternatively, it is also possible to utilize various chemical sensitizer by silver emulsion sensitization.As method for sensitizing, can individually or be applied in combination method universal in this areas such as sulphur sensitization method, selenium sensitizing, noble metal sensitizing.It addition, silver emulsion can also carry out dye-sensitized as required.
It is more than 1.2 for the ratio of the silver halide amount contained by silver halide emulsion layer Yu gelatin amount, preferably silver halide (silver conversion) with the mass ratio (silver/gelatin) of gelatin, more preferably more than 1.5.It addition, the silver halide amount contained by silver halide emulsion layer is preferably 2～10g/m with silver conversion2。
In silver halide emulsion layer, for various purposes, can be possibly together with known photo additive.These additives are recorded in ResearchDisclosureItem17643 (in December, 1978) and 18716 (in November, 1979), 308119 (in Decembers, 1989), or are recorded in cited document.
Conductive material presoma can have non-photosensitive layer between silver halide emulsion layer and physical development nucleus layer and/or in the above layer of silver halide emulsion layer.These non-photosensitive layers are the layers using water-soluble high-molecular compound as main binding agent.Here, so-called " using water-soluble high-molecular compound as main binding agent " refers to, in non-photosensitive layer, the water-soluble high-molecular compound containing 50～100 mass % is as binding agent.As water-soluble high-molecular compound mentioned here, as long as easy developer solution is swelling, developer solution can be made from non-photosensitive layer to be easily impregnated into silver halide emulsion layer and the compound of physical development nucleus layer of lower floor, then arbitrary compound can be selected.
As the concrete example of the water-soluble high-molecular compound of non-photosensitive layer, protein and the polyvinyl alcohol etc. such as gelatin, albumin and casein can be enumerated.Preferred water-soluble high-molecular compound is the protein such as gelatin, albumin, casein.In order to obtain the effect of the present invention fully, as the amount of binder of this non-photosensitive layer, preferably with respect to the scope that total binder amount is 20～100 mass % of silver halide emulsion layer, particularly preferably 30～80 mass %.
In these non-photosensitive layers, as required, can be containing the known photo additive as described in ResearchDisclosureItem17643 (in December, 1978), 18716 (in November, 1979) and 308119 (in Decembers, 1989).As long as it addition, do not hinder the stripping of the silver halide emulsion layer after process, it is also possible to utilize cross-linking agent to make non-photosensitive layer post bake.
Conductive material presoma preferably comprises has the non-sensitised dyestuff of maximum absorption or pigment as improving the anti-halation agent of image quality or penetration enhancer against sunshine in the wavelength photoreceptor region of silver halide emulsion layer.Can be preferably at above-mentioned prime coat or physical development nucleus layer or be located at the intermediate layer between physical development nucleus layer and silver halide emulsion layer as required or folder contains in the back coating that supporting mass is arranged as the non-sensitised dyestuff of anti-halation agent or pigment.Non-sensitised dyestuff or pigment as penetration enhancer against sunshine preferably contain in silver halide emulsion layer.As long as the addition of non-sensitised dyestuff or pigment can obtain the effect of target, then can change in wider scope.Such as in the case of containing in back coating as anti-halation agent, every 1m2Preferably about 20mg～the scope of about 1g, be more than 0.5 preferably as the absorbance under maximum absorption wavelength.
The method using above-mentioned conductive material presoma to draw silver pattern is illustrated.
Exposure to conductive material presoma illustrates.The silver halide emulsion layer of conductive material presoma is by scheme decent (example mesh pattern as mentioned) exposure.As exposure method, there is the method the closely sealed through original copy and silver halide emulsion layer of required pattern exposed or use various laser by the method etc. of required pattern scan exposure.In the above-mentioned method utilizing laser explosure, such as, can use at the 400～430nm blue semiconductor lasers (also referred to as purple light laser diode) with excitation wavelength.
The development treatment by silver salt diffusion transfer developer solution of conductive material presoma is illustrated.By by processing scheming the silver halide emulsion layer silver salt diffusion transfer developer solution of the decent conductive material presoma exposed as described above, following physical development occurring.If enumerated in case of employing negative photosensitive silver emulsion, then by exposure, the silver halide of the halogenation emulsion layer of exposure portion can have the sub-image core that can develop.On the other hand, the silver halide of the halogenation emulsion layer in unexposed portion does not have the sub-image core that can develop.The silver halide without the sub-image core that can develop in unexposed portion is dissolved by the silver soluble complex salt forming agent in developer solution, becomes silver complex salt.This silver complex salt is reduced on physical development nuclei and precipitating metal is silver-colored, such as, can obtain the Ag films of mesh pattern.On the other hand, have and the silver halide exposing the sub-image core developed can be utilized in silver halide emulsion layer by chemical development, become melanism silver.After development, it is no longer necessary to silver halide emulsion layer (melanism silver is also contained therein) and intermediate layer, protective layer etc. be removed, expose Ag films on surface.
The method that the removing method of the layer that the silver halide emulsion layer after development treatment etc. are located on physical development nucleus layer has washing to remove or peels off to upper transfers such as peeling papers.Washing removing has while using injection warm water jets such as cleaning cylinder (scrubbingroller) method carrying out removing and is spraying, with nozzle etc., the method utilizing the impulse force of water to carry out removing while warm water.The method carrying out transfer stripping with peeling paper etc. is following method, i.e., unnecessary developer solution on silver halide emulsion layer is extruded with cylinder etc. in advance, makes silver halide emulsion layer etc. closely sealed with peeling paper, silver halide emulsion layer etc. is peeled off to peeling paper transfer from supporting mass.As peeling paper, it is possible to use there is absorptive paper or non-woven fabrics or be provided with the material of absorptive void layer on paper with the binding agent of the particulate pigment of silicon dioxide etc and polyvinyl alcohol etc.
Developer solution that use in the development treatment of above-mentioned conductive material presoma, silver salt diffusion transfer development is illustrated.Developer solution is containing silver soluble complex salt forming agent and the alkali liquor of reducing agent.Silver soluble complex salt forming agent is the compound of the silver-colored complex salt dissolving silver halide, formation solubility.Reducing agent is the compound of precipitating metal silver for being reduced by silver soluble complex salt, on physical development nuclei.
nullAs the silver soluble complex salt forming agent used in developer solution，The thiosulfate of sodium thiosulfate and Ammonium hyposulfite. etc can be enumerated、The rhodanate of sodium rhodanate and ammonium thiocyanate etc、The sulphite of sodium sulfite and Potassium acid sulfite etc、(oxazolidinon-5-yl-methyl)-2-thiophene-carboxamides、2-mercaptobenzoic acid and derivant thereof、The cyclic imide class of uracil etc、Alkanolamine、Diamidogen、Mesoionic compound described in Japanese Unexamined Patent Publication 9-171257 publication、U.S. Patent No. 5，200，Thioether class as described in No. 294 description、5，5-dialkylhydantoin class、Alkyl sulfone class、And " TheTheoryofthephotographicProcess (4thedition，P474～475) "、Compound described in T.H.James work.
These silver soluble complex salt forming agents can individually or combine and use multiplely.
Reducing agent used in developer solution can use known development host in the field of the photo development as described in ResearchDisclosureItem17643 (in December, 1978), 18716 (in November, 1979) and 308119 (in Decembers, 1989).Concrete example as reducing agent, such as can enumerate 3-pyrazolidine ketone, p-methylaminophenol, para-aminophenol, p-hydroxybenzene glycine, the p-phenylenediamine etc. such as polyhydroxy benzenes class, ascorbic acid and the derivant thereof of hydroquinone, catechol, 1,2,3,-thrihydroxy-benzene, methylnaphthohydroquinone, chlorohydroquinone etc., 1-phenyl-4,4-dimethyl-3-pyrazolidone, 1-phenyl-3-pyrazolidone, 1-phenyl-4-methyl-4-hydroxymethyl-3-pyrazolidone.These reducing agents can individually or combine and use multiplely.
The content of silver soluble complex salt forming agent is preferably 0.001～5 mole in the developer solution of every 1L, more preferably 0.005～1 mole.The content of reducing agent is preferably 0.01～1 mole in the developer solution of every 1L, more preferably 0.05～1 mole.
The pH of developer solution is preferably more than 10, more preferably 11～14.In order to be adjusted to required pH, it is also possible to either individually or in combination containing buffer agents such as the alkaline agent such as sodium hydroxide, potassium hydroxide, phosphoric acid, carbonic acid in developer solution.It addition, the developer solution of the present invention preferably comprises the protective agent such as sodium sulfite and potassium sulfite.
The application of the developer solution for being developed by above-mentioned conductive material presoma diffusion transfer can also be the method that impregnated in developer solution by conductive material presoma or the method being coated with developer solution on conductive material presoma.The method that infusion process is following, i.e. in the developer solution being accumulated in large quantities in tank, the complete conductive material presoma of impregnated exposure is while transporting.Rubbing method e.g. to silver halide emulsion layer side with every 1 square metre 40～about 120ml method being coated with developer solution.As the concrete method of infusion process, the processing method as disclosed in Japanese Unexamined Patent Publication 2006-190535 publication, processing means can be enumerated.This infusion process is basic with the process under the noncontact of the silver-colored pattern plane of conductive material, is therefore not easy to produce the broken string of silver pattern, it is advantageous to.The use temperature of developer solution is preferably 2～30 DEG C, more preferably 10～25 DEG C.The use time of developer solution is suitably for 20 seconds～about 3 minutes.Which is particularly well-suited to the situation of infusion process.
The manufacture method of the conductive material of the present invention includes following operation, i.e. processed by the triazine or derivatives thereof that the conductive material with supporting mass and silver-colored pattern formed thereon obtained as indicated above is used in the sulfydryl that intramolecular has more than 2.Hereinafter, the triazine or derivatives thereof of the sulfydryl that utilization also has more than 2 in intramolecular processes conductive material and is referred to as DM process.
The method processed as DM, there is no special provision, but such as can enumerate: the conductive material with silver-colored pattern is impregnated into the method in the treatment fluid (following also referred to as DM treatment fluid) of triazine or derivatives thereof containing the sulfydryl in intramolecular with more than 2, on the conductive material with silver-colored pattern the method etc. of coating DM treatment fluid.Treatment temperature is preferably 10～50 DEG C, more preferably 20～40 DEG C.The process time is preferably more than 10 seconds, more preferably more than 30 seconds.
Concrete example as the triazine or derivatives thereof containing the sulfydryl of more than 2 used in the present invention, such as can enumerate thiocyanuric acid, 2,4-dimercapto triazine, 2,4-dimercapto-6-dibutylamino triazine, 2,4-dimercapto-6-phenyl amino triazine, 2,4-dimercapto-6-benzyl triazine etc., but it is not limited to them.
As the solvent of DM treatment fluid, such as, can use the arbitrary material of the ethers such as ketone, oxolane, methyl cellosolve, DMF, the dimethyl sulfoxides etc. such as the alcohols such as water, ethanol, acetone and combinations thereof.
DM treatment fluid in DM treatment fluid, the most every 1 liter of content contain the triazine or derivatives thereof of the sulfydryl of more than 2 in intramolecular is 0.01～20g, more preferably 0.05～5g.
In above-mentioned DM treatment fluid, as required, can be containing other compound.For example, it is possible to containing the pH for adjusting DM treatment fluid, alkali or acid, buffer agent etc..Such as, it is more than 8 using water as the preferred pH of DM treatment fluid during solvent.Additionally, in DM treatment fluid, it is also possible to containing defoamer, preservative, enzyme, surfactant etc..The arbitrary methods such as the dry warm air that can utilize use film drier of the conductive material after DM process are implemented.Before it is dried, it is also possible to wash with tap water or pure water etc..
Additionally, as by 2 coherent touch panel sensor of transparency electrode or the electromagnetic shielding film that is fitted on glass pane, on argent pattern, adhesive layer is set in the case of, as described above conductive material can also be impregnated in DM treatment fluid, but the adhesive layer being dispersed with the triazine or derivatives thereof of the sulfydryl with more than 2 is arranged on conductive material, contact with argent, process.This kind of mode is also contained in and conductive material utilizes the triazine or derivatives thereof of the sulfydryl having more than 2 in intramolecular carry out in the operation processed.
The manufacture method of the conductive material of the present invention can also be included into being about to silver pattern X-ray diffraction method in the half breadth at peak of 2 θ=38.2 ° be set to less than 0.41 the operation of process (being also referred to as post processing below).This kind of post processing is such as recorded in Japanese Unexamined Patent Publication 2008-34366 publication.The content of Japanese Unexamined Patent Publication 2008-34366 publication is in this manual by as with reference to quoting.
More particularly, post processing is to be processed by the conductive material aftertreatment fluid containing at least one in reducing substances, water-soluble phosphorus oxyacid compound and water solublity halogen compounds.
As reducing substances, it is possible to use known development host in the field of photo development.They are recorded in ResearchDisclosureItem17643 (in December, 1978), 18716 (in November, 1979) and 308119 (in Decembers, 1989) or are recorded in cited document.Concrete example as reducing substances, the polyamino benzene class such as amino phenols, p-phenylenediamine, the hydroxyl amines etc. such as polyhydroxy benzenes class, ascorbic acid and derivant thereof, 1-phenyl-4 such as hydroquinone, hydroquinone list potassium sulfonate, catechol, 1,2,3,-thrihydroxy-benzene, methylnaphthohydroquinone, chlorohydroquinone, the 3-pyrazolidine ketone of 4-dimethyl-3-pyrazolidone, 1-phenyl-3-pyrazolidone, 1-phenyl-4-methyl-4-hydroxymethyl-3-pyrazolidone etc., p-methylaminophenol, para-aminophenol, p-hydroxybenzene glycine can be enumerated.In the middle of them, from the standpoint of, harmfulness high from water solublity is few, preferably ascorbic acid.These reducing substanceses preferably as more than at least 1 mass %, be preferably 5～30 mass % aqueous solution use.
As water-soluble phosphorus oxyacid compound, there are phosphorus oxyacid and its esters such as phosphoric acid, phosphorous acid, ortho phosphorous acid, pyrophosphoric acid, tripolyphosphate, hexa metaphosphoric acid, additionally also have the ester compounds of these phosphorus oxyacids.The dissolubility of the water relative to 25 DEG C of these water-soluble phosphorus oxyacid compounds is at least more than 0.1 mass %, more than preferably 1 mass %.As the concrete example of these water-soluble phosphorus oxyacid compounds, there are the various known water-soluble phosphorus oxyacid compound of the pyrophosphates such as the hypophosphite such as phosphate, sodium hypophosphite, Sodium Acid Pyrophosphate, tripolyphosphate, the hexametaphosphates etc. such as monosodium phosphate, monopotassium phosphate, disodium hydrogen phosphate or the ester of the water-soluble phosphorus oxyacid compound such as polyoxyethylene alkyl ether phosphate ester, alkylphosphonic etc., various phosphoric acid esters.Wherein, the most inorganic water-soluble phosphorus oxyacid compound, phosphoric acid salt.These water-soluble phosphorus oxyacid compounds preferably as more than at least 5 mass %, be preferably 10～30 mass % aqueous solution use.
For the halogen used as water solublity halogen compounds, can be fluorine, chlorine, bromine, iodine any one.As long as the dissolubility of the water that water solublity halogen compounds is relative to 25 DEG C is at least the compound of more than 0.1 mass %, and is the compound that can release halide ion in aqueous, either which kind of can use.Concrete example as water solublity halogen compounds can enumerate hydrochloric acid, hydrobromic acid, hydroiodic acid, the hydracids such as Fluohydric acid., sodium chloride, ammonium chloride, the chlorides such as Rubinorm (Ifi)., sodium bromide, potassium bromide, the bromides such as lithium bromide, the iodide of sodium iodide etc., sodium fluoride, the various inorganic halides such as fluoride such as potassium fluoride, dimethylamine hydrochloride, the amine salt such as Trimethylamine bromate, benzalkonium chloride, alkyl pyridine hydrochlorate, imidazoline hydrochloride, PAH, diallyldimethylammonium chloride polymer etc..Wherein it is preferred that the compound that can release chloride ion in aqueous.Wherein, the preferred water-soluble inorganic such as sodium chloride, potassium chloride chloride.These water solublity halogen compounds preferably as more than at least 1 mass %, be preferably 5～30 mass % aqueous solution use.
Both can be used alone as the reducing substances of composition of aftertreatment fluid used in the present invention, water-soluble phosphorus oxyacid compound, water solublity halogen compounds, such as reducing substances and other reducing substances, the multiple of composition of the same race can also be used in mixed way, or other the composition of kind such as reducing substances and water solublity halogen compounds can also be used in mixed way.Wherein, the water solublity halogen compounds that efficiency is high, the storage stability of other aftertreatment fluid, Treatment Stability are high of most preferably with aftertreatment fluid.Temperature as post processing, although the highest more good, if but the Tg of the material not used at the supporting mass as conductive material is used below, conductive material can extend or disconnect the most in processes, therefore processes at a temperature of below Tg.As preferred treatment temperature, in the case of using water solublity halogen compounds, preferably more than 30 DEG C, in the case of the material using other, preferably also more than 40 DEG C, the most any material, the most more preferably 50～70 DEG C, further preferably process at 60～70 DEG C.Depending on although the time of process will be according to the composition of post processing, but by process more than 10 seconds, preferred process 30 seconds～3 minutes, it is possible to the half breadth of 2 θ=38.2 ° in X-ray diffraction is set to preferred scope.As processing method, it is possible to use impregnation process, utilization spray apply the method for aftertreatment fluid, coating etc..From the stability of temperature, be difficult to occur aftertreatment fluid composition crystallization from the standpoint of, preferably impregnation process.Additionally, it is preferred that after post processing, carry out washing process, conductive material surface takes to prevent the process of the crystallization of the composition of aftertreatment fluid.
Although post processing makes electric conductivity improve, but the broken string etc. when sometimes being easier to cause manufacture or when using.In the present invention, owing to having carried out DM process, therefore it is possible to prevent broken string.Although post processing no matter before the DM of the present invention processes or after any in the case of can be carried out, but from prevent postprocessing working procedures, such as processing means conveyance time the broken string that likely produces from the standpoint of, implement the most later.
Hereinafter, utilize embodiment that the present invention is specifically described, but the present invention is not limited by this description certainly.
[embodiment]
(embodiment 1)
As supporting mass, employ and utilize the layer containing vinylidene chloride to implement the pet film that light penetration easy bond processing, total is 90% and thickness is 100 μm.Before coating physical development nucleus layer, it is coated with containing 500mg/m on this thin film2The prime coat of gelatin.
Then, palladium sulfide colloidal sol is produced as shown below.Use the colloidal sol of gained, produce physical development karyolymph.
The A liquid with above-mentioned composition being stirred while mixing with B liquid, being passed through the pillar being filled with ion exchange resin after 30 minutes, obtaining palladium sulfide colloidal sol.Produce the physical development karyolymph with following composition.
(Japan's catalyst (strain) polymine processed；Mean molecule quantity 10,000)
By this physical development karyolymph so that palladium sulfide is calculated as 0.4mg/m with solid constituent2Mode be coated on prime coat, and be dried.
It follows that to on the face of side opposite side being coated with above-mentioned physical development nucleus layer, be coated with the back coating of following composition.
To change the dyestuff 1 that the formula of 1 represents
[changing 1]
To change the surfactant (S-1) that the formula of 2 represents
[changing 2]
It follows that on above-mentioned physical development nucleus layer, be coated with the intermediate layer of following composition, the silver halide emulsion layer on this intermediate layer and the outermost layer on this silver halide emulsion layer.Silver emulsion is the common double note mixing method manufacture utilizing photo silver emulsion.This silver emulsion is 95 moles of % of silver chloride and 5 moles of % of Silver monobromide, prepares in the way of making the mean diameter of silver halide particle be 0.15 μm.So obtained silver emulsion is used sodium thiosulfate and gold chloride according to well-established law, implements gold sulphur sensitization.The silver of the every 1g of so obtained silver emulsion contains the gelatin of 0.5g.
Using so obtained conductive material presoma in order to finsen lamp as the exposing through original copy of pattern of closely sealed Fig. 1 of having of closely sealed printer of light source.In the pattern of Fig. 1, it is that foursquare mesh is constituted that silver mesh pattern portion (conductive part) a is spaced the structure further of 300 μm by live width 10 μm, fine rule.B is electrode terminal section.C is non-image portion (non-conductive portion).Exposure is so that the mesh fine rule width of the conductive material light exposure identical with the fine rule width through original copy is carried out.
Thereafter, the conductive material presoma exposed is impregnated 60 seconds with 20 DEG C in the developer solution of following composition.Thereafter, then silver halide emulsion layer, intermediate layer, outermost layer and back coating are washed with the warm water of 40 DEG C and remove, be dried process, obtain the conductive material that Ag films is formed with mesh pattern shape.Optical microscope is utilized to confirm the fine rule width of silver-colored pattern image and the spacing of Fig. 1, as a result of which it is, reproduced fine rule width and the spacing of exposure mask.It addition, utilize confocal microscope (LASERTEC company system, OPTELICSC130) to have studied the thickness of thin thread part, its result is 0.15 μm.
Total amount water is set to 1000mL.
It is adjusted to pH=12.2.
[resistance measurement before film adhered]
Utilize the resistance (the b portion of Fig. 1) between the electrode terminal of the conductive material that tester determines the obtained as indicated above silver-colored pattern being formed with Fig. 1.Outermost terminal is set to 1, the terminal of inner side is set to 7, utilizes tester to determine the resistance between the electrode terminal of terminal 1～7.These results are shown in table 1 (before the laminating in table).
[DM process]
Conductive material to the obtained as indicated above silver-colored pattern being formed with Fig. 1, processes 60 seconds at 30 DEG C with the DM treatment fluid of following composition.Thereafter, conductive material is washed 30 seconds with the warm water of 35 DEG C, use film drier to be dried 2 minutes by the warm air of 60 DEG C.
Total amount water is set to 1000mL.
It is adjusted to pH=9.0.
To having carried out the conductive material that DM process is formed with the silver-colored pattern of Fig. 1, use the post processing that 3 mass % sodium-chloride water solutions are implemented 60 seconds at 60 DEG C.Thereafter, conductive material is washed 30 seconds with the warm water of 35 DEG C, use film drier to be dried 2 minutes by the warm air of 60 DEG C.
[resistance measurement after film adhered]
To implementing the conductive material that post processing is formed with the silver-colored pattern of Fig. 1, pressurize while the niproll pressure of thin film adhering machine being adjusted to 0.5MPa/m, transports optics clear adhesive sheet (Nitto Denko Corp LUCIACSCS9622T) with the speed of 1m/ minute, be bonded on silver pattern.Now, optics clear adhesive sheet in the silver-colored pattern of Fig. 1, by do not cover portion of terminal b and electrode under cover the electrode most in the way of bond.By be bonded with the conductive material of adhesive sheet 60 DEG C, preserve 200 hours under the conditions of 90% after, and the resistance determined with tester before laminating between the electrode terminal of conductive material identically.These results are shown in table 1 (after the laminating in table).
(embodiment 2)
Except by the 2 of DM treatment fluid, 4-dimercapto-6-dibutylamino triazine is changed to beyond thiocyanuric acid, produces conductive material, implements evaluation same as in Example 1ly same as in Example 1ly.These results are shown in table 1.
(embodiment 3)
Except by the 2 of DM treatment fluid, 4-dimercapto-6-dibutylamino triazine is changed to 2, beyond 4-dimercapto-6-phenyl amino triazine, produces conductive material, implements evaluation same as in Example 1ly same as in Example 1ly.These results are shown in table 1.
(comparative example 1)
In addition to being not carried out utilizing the process of DM treatment fluid, produce conductive material same as in Example 1ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(comparative example 2)
Except by the 2 of DM treatment fluid, 4-dimercapto-6-dibutylamino triazine is changed to 2-amino-4, beyond 6-dimercapto pyrimidine, produces conductive material, implement evaluation same as in Example 1ly same as in Example 1ly.These results are shown in table 1.
(comparative example 3)
Except by the 2 of DM treatment fluid, 4-dimercapto-6-dibutylamino triazine is changed to beyond 2-mercaptobenzimidazole, produces conductive material, implements evaluation same as in Example 1ly same as in Example 1ly.These results are shown in table 1.
(comparative example 4)
Except by the 2 of DM treatment fluid, 4-dimercapto-6-dibutylamino triazine is changed to, beyond 1-phenyl-5-mercapto-tetrazole, produce conductive material, implement evaluation same as in Example 1ly same as in Example 1ly.These results are shown in table 1.
(embodiment 4)
In the pattern of Fig. 1, silver mesh pattern portion (conductive part) a employ be spaced by live width 15 μm, fine rule the structure further of 350 μm be foursquare mesh constitute through original copy.The thickness utilizing the silver-colored mesh pattern that confocal microscope (LASERTEC company system, OPTELICSC130) determines is 0.15 μm.Produce conductive material the most same as in Example 1ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(comparative example 5)
In addition to being not carried out utilizing the process of DM treatment fluid, produce conductive material the same as in Example 4ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(embodiment 5)
In the pattern of Fig. 1, silver mesh pattern portion (conductive part) a employ be spaced by live width 20 μm, fine rule the structure further of 400 μm be foursquare mesh constitute through original copy.The thickness utilizing the silver-colored mesh pattern that confocal microscope (LASERTEC company system, OPTELICSC130) determines is 0.15 μm.Produce conductive material the most same as in Example 1ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(comparative example 6)
In addition to being not carried out utilizing the process of DM treatment fluid, produce conductive material same as in Example 5ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(embodiment 6)
In addition to the silver halide emulsion layer of embodiment 1 is formed change as shown below, define silver pattern same as in Example 1ly.
The thickness utilizing the silver-colored mesh pattern that confocal microscope (LASERTEC company system, OPTELICSC130) determines is 0.3 μm.Implement DM process, post processing the most same as in Example 1ly, produce conductive material, implement evaluation same as in Example 1ly.These results are shown in table 1.
(comparative example 7)
In addition to being not carried out utilizing the process of DM treatment fluid, produce conductive material same as in Example 6ly, implement evaluation same as in Example 1ly.These results are shown in table 1.
(comparative example 8)
Use DM treatment fluid conductive material before treatment to embodiment 1, uses following plating solution, in liquid temperature 25 DEG C, electric current density 1A/dm2, to implement electrolysis under conditions of 2 minutes plated film time silver-plated, produces conductive material.Resistance between the electrode terminal of the pattern determining the Fig. 1 after plating with tester.These results are shown in table 1 (before the laminating in table).The thickness utilizing the mesh pattern after the plating that confocal microscope (LASERTEC company system, OPTELICSC130) determines is 0.5 μm.Thereafter, implement the laminating of DM process, post processing, adhesive sheet same as in Example 1ly.Implement evaluation same as in Example 1ly.These results are shown in table 1 (after the laminating in table).It can be seen that being mixed into of air in the conductive material of adhesive sheet of having fitted, placing on liquid crystal panel after confirmed, even if as a result of which it is, belonging to and do not stare the defective level that can also see.
Total amount water is set to 1000mL.
[table 1]
According to table 1 as a result, it is possible to understand effectiveness of the invention.
From above result it will be clear that, utilize the present invention, the manufacture method of following conductive material can be obtained, i.e., can obtain improving the conductive material of the deviation of the electric conductivity of the poor flow of electrode and each electrode, additionally can obtain the conductive material improving these problems.
The manufacture method of the conductive material of the present invention and conductive material, as the electromagnetic shielding material of various display or window etc., additionally as various touch panel transparency electrodes, can become manufacture method likely and material.
Claims (5)
1. the manufacture method of a conductive material, it is characterised in that
Including the conductive material by having supporting mass and argent pattern that thickness formed thereon is below 0.3 μm, utilize the operation carrying out processing containing the triazine of sulfydryl or the treatment fluid of its derivant in intramolecular with more than 2, and the operation of adhesive layer is set on this argent pattern.
The manufacture method of conductive material the most according to claim 1, wherein,
The live width of described argent pattern is below 20 μm.
The manufacture method of conductive material the most according to claim 1 and 2, wherein,
Described argent pattern is the argent pattern utilizing the method using silver salt diffusion transfer mode to obtain.
The manufacture method of conductive material the most according to claim 1 and 2, wherein,
Also include that the half breadth at the peak of 2 θ=38.2 ° in the X-ray diffraction method carrying out making argent pattern reaches the operation of the post processing of less than 0.41.
5. a conductive material, it is that the manufacture method utilizing the conductive material according to any one of claim 1～4 obtains.
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| JP2012059254A JP6018389B2 (en) | 2012-03-15 | 2012-03-15 | Manufacturing method of conductive material |
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| WO2005099328A1 (en) * | 2004-03-31 | 2005-10-20 | Zeon Corporation | Circuit board and manufacturing method thereof |
| JP2007088218A (en) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | Manufacturing method of translucent electromagnetic wave shielding film, translucent electromagnetic wave shielding film obtained thereby, display panel film, display panel optical filter and plasma display panel |
| JP5166697B2 (en) | 2006-01-11 | 2013-03-21 | 三菱製紙株式会社 | Manufacturing method of conductive material |
| KR20070111078A (en) * | 2006-05-16 | 2007-11-21 | 재단법인서울대학교산학협력재단 | Coating method of nano material using electron beam |
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| JP2011210579A (en) * | 2010-03-30 | 2011-10-20 | Mitsubishi Paper Mills Ltd | Transparent conductive film |
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| KR101390088B1 (en) | 2014-04-28 |
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