CN103272796B - A kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet - Google Patents
A kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet Download PDFInfo
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- CN103272796B CN103272796B CN201310198354.7A CN201310198354A CN103272796B CN 103272796 B CN103272796 B CN 103272796B CN 201310198354 A CN201310198354 A CN 201310198354A CN 103272796 B CN103272796 B CN 103272796B
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Abstract
The invention discloses a kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet, first silicon chip is tentatively cleaned, then adopt the inorganic alkali solution of low concentration to carry out trace to silicon chip surface and go thick cleaning, silicon chip top layer broken grain layer is carried out reaction removal 2 ~ 5 microns, and surface inserting thing is peeled off, so both ensure that the cleanliness factor of silicon chip surface, remain again the outer gettering function of silicon chip, reach the object of clean cleaning.
Description
Technical field
The present invention relates to monocrystalline silicon piece processing and manufacturing field, particularly a kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet.
Background technology
As everyone knows, semiconductor monocrystal silicon chip is mainly used in making IC integrated circuit and discrete device, and because IC manufacture and device fabrication processes all require higher cleanliness factor, the silicon chip purity requirements therefore as substrate is also very high.Monocrystalline silicon growing process is that from melt, direct growth is out at vacuum low-pressure.The crystal that quality is qualified, form silicon chip through cutting, silicon chip, after Overheating Treatment, chamfering, grinding step, carries out surface clean.Cleaning link quality has a direct impact finished product silicon chip surface quality.
In addition silicon chip grinding adopts cast iron plate to carry out Bidirectional grinding, silicon chip is made to reach non-uniform thickness, inevitably broken grain layer is formed at silicon chip surface in process of lapping, metallic iron during some grindings, abrasive material, silica flour, even organic matter can be embedded in broken grain layer, conventional clean generally adopts Ultrasonic Cleaning, cannot reach good surface impurity and remove.In the technique such as diffusion of element manufacturing, easily introduce impurity, cause device performance to decline.The organic removal of active surface is not carried out in the cleaning method related in patent 200910154751.8 " cleaning method of monocrystalline/polycrystalline silicon chips ", add the inhomogeneities of later stage clean surface, silicon chip inorganic base concentration is larger simultaneously, be about 30 ~ 50%, the alkali lye of so large concentration easily volatilizees in actual production, unfavorable to operating personnel, and site environment is poor, simultaneously also for later stage surface clean adds difficulty, easily cause surperficial alkali metal to remain, affect silicon chip surface quality.Meanwhile, in inorganic base reaction, there is ultrasonic process, ultrasonic easily in silicon chip surface formation cavitation, silicon chip surface therefore can be caused to react uneven, can aberration be there is.The dehydration of a large amount of absolute ethyl alcohol is related in patent 200910035260.1 " a kind of silicon wafer cleaning method ", well-known absolute ethanol volatilizes is strong, and it is inflammable, this is the goods and materials forbidding in producing to control, this cleaning method also relates to the inflammable articles such as kerosene simultaneously, and in actual production, potential safety hazard is larger.
Summary of the invention
Technical problem to be solved by this invention is just to provide a kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet, uses low alkaline concentration reactant liquor to carry out silicon chip surface broken grain layer and insert removal, ensures the cleanliness factor of silicon chip surface, reach the object of clean cleaning.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet, is characterized in that comprising the steps:
(1) ground silicon chip is inserted horse;
(2) horse and silicon chip are put into the 1# dipper being loaded with industrial organic washing agent to soak;
(3) horse and silicon chip are transferred to the ultrasonic overflow launder groove cleaning of 1#, scavenging period 5 ~ 15min: ultrasound intensity 30 ~ 100KHZ;
(4) horse and silicon chip are transferred to the ultrasonic overflow launder groove cleaning of 2#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(5) horse and silicon chip are transferred to the 2# dipper being loaded with inorganic alkali solution and additive, inorganic base concentration is 2 ~ 10%, and additive volume ratio is 0.2%, and it is 2 ~ 5 μm that silicon wafer thickness is removed;
(6) horse and silicon chip are transferred to the ultrasonic overflow launder groove cleaning of 3#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(7) horse and silicon chip are transferred to the ultrasonic overflow launder groove cleaning of 4#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(8) horse and silicon chip are transferred to the ultrasonic overflow launder groove cleaning of 5#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(9) horse and silicon chip are carried out rotation to dry, and put into packing box;
(10) silicon chip tested and and pack.
Preferably, in described step (2), industrial organic washing agent concentration is 1 ~ 5%, and temperature is 50 ~ 70 DEG C, and soak time is 10 ~ 15min.
Preferably, in described step (5), inorganic alkali solution is NaOH or KOH solution, and temperature is 60-90 DEG C, scavenging period 2 ~ 10min.
Preferably, in described step (5), additive volume ratio is 0.2%, and composition is fructose: 0.1 ~ 6%; Natrium citricum: 0.1 ~ 3%; Isopropyl alcohol: 2 ~ 3%; Cyclohexandiol: 1 ~ 2%; Sodium metasilicate 1 ~ 7%; All the other are high purity water.
Preferably, adopt automatic swinging cleaning in described step (5), wobble frequency is 20-100 time/min.
Preferably, the water related in described step (3), (4), (6), (7), (8) is high purity water, and resistivity is more than 10 megaohms, and high purity water flow is 3 ~ 15L/min.
Preferably, adopt hot blast to advertise and rotating centrifugal drying method in described step (9), centrifugation rate 600-1200rpm, dries time 5-10min, blast temperature 45 DEG C.
Preferably, described horse adopts PFA material.
The present invention first tentatively cleans silicon chip, then adopt the inorganic alkali solution of low concentration to carry out trace to silicon chip surface and go thick cleaning, silicon chip top layer broken grain layer is carried out reaction removal 2 ~ 5 microns, and surface inserting thing is peeled off, so both ensure that the cleanliness factor of silicon chip surface, remain again the outer gettering function of silicon chip, reach the object of clean cleaning.
Detailed description of the invention
Below in conjunction with a concrete embodiment the present invention made and illustrating:
Embodiment 1,
A collection of ground N-type <111>4 cun of single-chip is carried out high-cleanness, high cleaning, silicon chip original thickness 285-288 micron, resistivity 30 ~ 35 ohmcm:
(1) ground silicon chip is inserted PFA horse to be cleaned, and be placed in pure water groove and shift, prepare cleaning;
(2) horse and silicon chip are put into 1# dipper, carry out surperficial organic immersion, 60 DEG C, fully soak 10min;
(3) soaked horse and silicon chip are put into transfer to the cleaning of 1# ultrasonic overflow launder, scavenging period 10min, pure water flow 5L/min, ultrasound intensity 60KHZ, be mainly used in removing surface through the organic contaminations fully infiltrated, remove surperficial larger particles simultaneously;
(4), after 10min, horse and silicon chip are put into and transfers to the ultrasonic overflow launder cleaning of 2#, scavenging period 10min, pure water flow 5L/min, ultrasound intensity 30KHZ, main removal surface comparatively small particle, guarantee that the particle reacting the absorption of front silicon chip surface is removed;
(5) after 10min, horse and silicon chip are put into and transfer to 2# dipper and react, reaction temperature 90 DEG C, inorganic base concentration 5%, additive volume ratio 0.2%, scavenging period 5min, wobble frequency 50 times/min;
(6), after 5min, horse and silicon chip are quickly transferred to the ultrasonic overflow launder cleaning of 3#, scavenging period 5min, spillway discharge: 15L/min, ultrasound intensity 60KHZ;
(7) horse and silicon chip are put into transfer to the cleaning of 4# ultrasonic overflow launder, scavenging period 10min, spillway discharge: 8L/min ultrasound intensity 30KHZ;
(8) horse and silicon chip are put into transfer to the cleaning of 5# ultrasonic overflow launder, scavenging period 10min, spillway discharge: 8L/min, ultrasound intensity 30KHZ;
(9) cleaned horse and silicon chip are carried out rotation to dry, rotating centrifugal speed 850rpm, blast temperature 45 DEG C
(10) silicon chip tested and and pack.
Through inspection, the silicon wafer thickness through the method cleaning is 282-285, and surface color is homogeneous, slightly shinny, and the lower 300 times of silicon chip surface observations of light microscope are without grinding insert or foreign material.
Embodiment 2:
A collection of ground N-type <111>5 cun of single-chip is carried out high-cleanness, high cleaning, silicon chip original thickness 525-527 micron:
(1) ground silicon chip is inserted PFA horse to be cleaned, and be placed in pure water groove and shift, prepare cleaning;
(2) horse and silicon chip are put into 1# dipper, carry out surperficial organic immersion, 60 DEG C, fully soak 15min;
(3) soaked horse and silicon chip are put into transfer to the cleaning of 1# ultrasonic overflow launder, scavenging period 15min, pure water flow 10L/min, ultrasound intensity 65KHZ, be mainly used in removing surface through the organic contaminations fully infiltrated, remove surperficial larger particles simultaneously;
(4), after 15min, horse and silicon chip are put into and transfers to the ultrasonic overflow launder cleaning of 2#, scavenging period 15min, pure water flow 10L/min, ultrasound intensity 28KHZ, main removal surface comparatively small particle, guarantee that the particle reacting the absorption of front silicon chip surface is removed;
(5) horse and silicon chip are put into after 15min and transfer to 2# dipper and react, reaction temperature 70 DEG C, inorganic base concentration is 3%, additive volume ratio 0.2%, scavenging period 10min, wobble frequency 80 times/min;
(6), after 10min, horse and silicon chip are quickly transferred to the ultrasonic overflow launder cleaning of 3#, scavenging period 10min, spillway discharge: 15L/min, ultrasound intensity 65KHZ;
(7) after 10min, horse and silicon chip are put into and transfer to the cleaning of 4# ultrasonic overflow launder, scavenging period 10min, spillway discharge: 12L/min ultrasound intensity 28KHZ;
(8) after 10min, horse and silicon chip are put into and transfer to the cleaning of 5# ultrasonic overflow launder, scavenging period 10min, spillway discharge: 12L/min, ultrasound intensity 28KHZ;
(9) cleaned horse and silicon chip are carried out rotation to dry, rotating centrifugal speed 950rpm, blast temperature 45 DEG C
(10) silicon chip tested and and pack.
Through inspection, the silicon wafer thickness through the method cleaning is 521-523, and surface color is homogeneous, slightly shinny, and the lower 300 times of silicon chip surface observations of light microscope are without grinding insert or foreign material.
Claims (6)
1. a cleaning method for high-cleanness, high monocrystalline silicon abrasive sheet, is characterized in that comprising the steps:
(1) ground silicon chip is inserted horse;
(2) horse and silicon chip are put into the 1# dipper being loaded with industrial organic washing agent to soak, industrial organic washing agent concentration is 1 ~ 5%, and temperature is 50 ~ 70 DEG C, and soak time is 10 ~ 15min;
(3) horse and silicon chip are transferred to the ultrasonic overflow launder cleaning of 1#, scavenging period 5 ~ 15min: ultrasound intensity 30 ~ 100KHZ;
(4) horse and silicon chip are transferred to the ultrasonic overflow launder cleaning of 2#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(5) horse and silicon chip are transferred to the 2# dipper being loaded with inorganic base and additive solution, inorganic base concentration is 2 ~ 10%, and it is 2 ~ 5 μm that silicon wafer thickness is removed, wherein additive: volume ratio is 0.2%, and composition is fructose: 0.1 ~ 6%; Natrium citricum: 0.1 ~ 3%; Isopropyl alcohol: 2 ~ 3%; Cyclohexandiol: 1 ~ 2%; Sodium metasilicate 1 ~ 7%; All the other are high purity water;
(6) horse and silicon chip are transferred to the ultrasonic overflow launder cleaning of 3#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(7) horse and silicon chip are transferred to the ultrasonic overflow launder cleaning of 4#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(8) horse and silicon chip are transferred to the ultrasonic overflow launder cleaning of 5#, scavenging period 5 ~ 15min, ultrasound intensity 30 ~ 100KHZ;
(9) horse and silicon chip are carried out rotation to dry, and put into packing box;
(10) silicon chip tested and pack.
2. the cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet according to claim 1, is characterized in that: in described step (5), inorganic alkali solution is NaOH or KOH solution, and concentration is 2 ~ 10%, and temperature is 60-90 DEG C, scavenging period 2 ~ 10min.
3. the cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet according to claim 1, is characterized in that: adopt automatic swinging cleaning in described step (5), wobble frequency is 20-100 time/min.
4. the cleaning method of the high-cleanness, high monocrystalline silicon abrasive sheet according to claims 1 to 3 any one, it is characterized in that: the water related in described step (3), (4), (6), (7), (8) is high purity water, resistivity is more than 10 megaohms, and high purity water flow is 3 ~ 15L/min.
5. the cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet according to claim 4, it is characterized in that: in described step (9), adopt hot blast to advertise and rotating centrifugal drying method, centrifugation rate 600-1200rpm, dries time 5-10min, blast temperature 45 DEG C.
6. the cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet according to claim 4, is characterized in that: described horse adopts PFA material.
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| CN104577077B (en) * | 2013-10-16 | 2018-03-06 | 国家纳米科学中心 | Silicon-carbon nano compound film and its preparation method and application and lithium ion battery |
| CN106180110A (en) * | 2016-08-24 | 2016-12-07 | 赣州帝晶光电科技有限公司 | Liquid crystal glass base method for cleaning surface after a kind of grinding |
| TWI638043B (en) * | 2017-03-22 | 2018-10-11 | 中美矽晶製品股份有限公司 | Cleaner for silicon wafer and method for cleaning silicon wafer |
| CN114023638B (en) * | 2021-11-02 | 2023-02-03 | 扬州虹扬科技发展有限公司 | Method for removing inversion layer of silicon wafer after phosphorus diffusion |
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| CN101700520A (en) * | 2009-12-03 | 2010-05-05 | 杭州海纳半导体有限公司 | Washing method of monocrystalline/polycrystalline silicon chips |
| CN102212832A (en) * | 2011-05-03 | 2011-10-12 | 湖南天润新能源有限责任公司 | Silicon material cleaning technology |
| CN102412172A (en) * | 2011-11-01 | 2012-04-11 | 浙江光益硅业科技有限公司 | Cut/ground silicon wafer surface cleaning method |
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| CN1303518A (en) * | 1998-05-26 | 2001-07-11 | Memc电子材料有限公司 | Post-etching alkaline treatment process |
| WO2000069575A1 (en) * | 1999-05-18 | 2000-11-23 | Memc Electronic Materials, Inc. | Method and apparatus for washing a wafer carrier |
| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
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Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Address before: 313100 No. 1299, front East Street, Changxing County County, Zhejiang, Huzhou Applicant before: Zhejiang Cowin Electronics Co., Ltd. |
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