CN103258907B - A kind of three-junction cascade solar cell and preparation method thereof - Google Patents

A kind of three-junction cascade solar cell and preparation method thereof Download PDF

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CN103258907B
CN103258907B CN201310153285.8A CN201310153285A CN103258907B CN 103258907 B CN103258907 B CN 103258907B CN 201310153285 A CN201310153285 A CN 201310153285A CN 103258907 B CN103258907 B CN 103258907B
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layer
battery layers
gaas
solar cell
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CN103258907A (en
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李奎龙
董建荣
孙玉润
曾徐路
赵勇明
于淑珍
赵春雨
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to technical field of solar, especially the preparation method of three-junction cascade solar cell, comprise the steps: to use Metalorganic chemical vapor deposition method to grow In the most successivelyxGa1‑xAs1‑yNyEnd battery layers, the first tunnel knot, InmGa1‑mAs1‑nNnIntermediate cell layer, the second tunnel knot, AlpGa1‑p‑qInqP top battery layers and GaAs contact layer；Again bottom described GaAs substrate and described GaAs contact layer top make Ohmic electrode.The present invention also provides for the structure of this solar cell.The present invention realizes the grading absorption to solar spectrum and utilizes, the currents match between each sub-battery, each battery layers and GaAs Lattice Matching, can obtain higher battery efficiency, be a kind of potential preferable solar cell material.

Description

A kind of three-junction cascade solar cell and preparation method thereof
Technical field
The present invention relates to technical field of solar batteries, the structure of a kind of three-junction cascade solar cell And preparation method thereof.
Background technology
In iii-v area of solar cell, many knot body system is generally used to realize the grading absorption to solar spectrum Utilize, to obtain higher conversion efficiency.Studying more and that technology is more ripe system at present is GaInP/GaAs/Ge tri-junction battery.The high conversion efficiency that this battery reaches at present is 32-33%.But should It is that Ge battery covers wider spectrum that system yet suffers from a subject matter, and its short circuit current maximum can reach 2 times of other two junction batteries, are restricted owing to being connected by three junction batteries, the solar spectrum that Ge battery is corresponding Energy is not by abundant conversion.Calculate three knots showing that there is the combination of 1.93eV/1.39eV/0.94eV gap Solar cell conversion efficiency under 100 times of optically focused is more than 51%.
A kind of material that can realize the combination of this gap is AlInAs/InGaAsP/InGaAs, but the crystalline substance of this material Lattice constant and GaAs substrate have the mismatch of about 2.5%, and the most still lack and above-mentioned material lattice paprmeter The substrate joined.In order to obtain the AlInAs/InGaAsP/InGaAs of 1.93eV/1.39eV/0.94eV gap combination Material, a kind of common method is to utilize lattice mutation technology to grow lattice varied buffer layer on gaas substrates, Realize the transition of lattice paprmeter, but Material growth is had higher requirement by this technology, simultaneous buffering layer Introducing also bring more defect, reduce the performance of battery.
Summary of the invention
For solving the problems referred to above, the present invention proposes the preparation method of a kind of three-junction cascade solar cell, including Following steps:
Metalorganic chemical vapor deposition method is used to grow In the most successivelyxGa1-xAs1-yNyThe end Battery layers, the first tunnel knot, InmGa1-mAs1-nNnIntermediate cell layer, the second tunnel knot, AlpGa1-p-qInqP Top battery layers and GaAs contact layer；Again bottom described GaAs substrate and described GaAs contact layer top system Make Ohmic electrode.
Preferably, described InxGa1-xAs1-yNyEnd battery layers, described InmGa1-mAs1-nNnIntermediate cell layer, Described AlpGa1-p-qInqP top battery layers respectively includes N-type launch site and the p-type base of stacked on top of one another.
Preferably, described N-type launch site doping content is 2 × 1018cm-3, growth thickness is 0.2 micron；Institute The doping content stating p-type base is 3 × 1017cm-3, growth thickness is 3.0 microns.
Preferably, described InxGa1-xAs1-yNyThe energy gap of end battery layers is 0.94 ± 0.01eV；Described InxGa1-xAs1-yNyX, y of end battery layers respectively may be about 10.0%, 3.0%.
Preferably, described InmGa1-mAs1-nNnThe energy gap of intermediate cell layer is 1.39 ± 0.01eV；Described InmGa1-mAs1-nNnIm, n of intermediate cell layer is respectively 1.0%, 0.30%.
Preferably, described AlpGa1-p-qInqThe energy gap of P top battery layers is 1.93 ± 0.01eV；Described AlpGa1-p-qInqP, q of P top battery layers are respectively 3.6%, 49.0%.
Preferably, described first tunnel knot and/or the second tunnel knot include P-type layer and the N-type of stacked on top of one another Layer, the material of described N-type layer is N-type GaInP or N-type GaAs；The material of described P-type layer is p-type GaAs or p-type AlGaInP；The doping content of described N-type layer or P-type layer is not less than 1 × 1019cm-3, Growth thickness is 0.015 micron.
The present invention also provides for the structure of the solar cell using above-mentioned preparation method to obtain, including existing successively The In of GaAs GrownxGa1-xAs1-yNyEnd battery layers, the first tunnel knot, InmGa1-mAs1-nNnMiddle Battery layers, the second tunnel knot, AlpGa1-p-qInqP top battery layers and GaAs contact layer；Described GaAs substrate Bottom and described GaAs contact layer top are additionally provided with Ohmic electrode.
The present invention, can while making lattice paprmeter holding constant by regulating GaAs and introducing multiple element To regulate the bandwidth of material in a big way, finally obtain the gap group of 1.93eV, 1.39eV, 0.94eV Close, it is achieved the grading absorption of solar spectrum is utilized.Further, the currents match between each sub-battery of the present invention, Lattice paprmeter is mated with GaAs substrate, can obtain higher battery efficiency.Employing conventional method grows, growth Process is simple.The present invention makes each battery layers and GaAs Lattice Matching and has required bandwidth, makes A kind of potential preferable solar cell material.
Accompanying drawing explanation
Fig. 1 is the structural representation of solar cell of the present invention.
Detailed description of the invention
Below, with reference to the accompanying drawings the specific embodiment of the invention is elaborated.
Refering to shown in Fig. 1, the three-junction cascade solar cell of the present invention, its end, in, three battery layers in top, It is In respectivelyxGa1-xAs1-yNy、InmGa1-mAs1-nNn、AlpGa1-p-qInqP, material are formed, concrete structure For: the In of growth on GaAs substrate 10 successivelyxGa1-xAs1-yNyEnd battery layers the 20, first tunnel knot 30, InmGa1-mAs1-nNnIntermediate cell layer the 40, second tunnel knot 50, AlpGa1-p-qInqP top battery layers 60 and GaAs contact layer 70；Bottom described GaAs substrate and described GaAs contact layer top is additionally provided with Ohmic electrode.
The preparation method of three-junction cascade solar cell of the present invention comprises the following steps:
(1) growth InxGa1-xAs1-yNyEnd battery layers 20, wherein, this InxGa1-xAs1-yNyEnd battery layers 20 Utilizing In, N Substitute For Partial As atom to be formed, wherein, x, y are respectively 10.0%, 3.0%.
This InxGa1-xAs1-yNyEnd battery layers 20 includes N-type launch site and the p-type base of stacked on top of one another.First First by Metalorganic chemical vapor deposition method (MOCVD) growing P-type on p-type GaAs substrate 10 InxGa1-xAs1-yNy, forming doping content is 3 × 1017cm-3, growth thickness is the p-type base of 3.0 microns 21.Then N-type In is grown in p-type basexGa1-xAs1-yNy, forming doping content is 2 × 1018cm-3, raw Long thickness is the N-type launch site 22 of 0.2 micron.It is consequently formed that to have energy gap be 0.94eV's InxGa1-xAs1-yNyEnd battery layers 20.
(2) the first tunnel knot 30 is grown.
This first tunnel knot 30 includes P-type layer 32 and the N-type layer 31 of stacked on top of one another.Described InxGa1-xAs1-yNyThe surface, N-type launch site 22 of end battery layers 20, grows N-type GaInP, forms doping Concentration is 1 × 1019cm-3Above, growth thickness is the N-type layer 31 of 0.015 micron.Then in described N-type Growing P-type GaAs on layer 31, forms doping content more than 1 × 1019cm-3, growth thickness is 0.015 micron P-type layer 32.
(3) growth InmGa1-mAs1-nNnIntermediate cell layer 40.Wherein, described InmGa1-mAs1-nNnMiddle electricity Pond layer 40 utilizes In, N Substitute For Partial As atom to be formed, and wherein, m, n are respectively 1.0%, 0.3%.
This InmGa1-mAs1-nNnIntermediate cell layer 40 includes N-type launch site 42 and the p-type base of stacked on top of one another District 41.First by mocvd method growing P-type in the P-type layer 32 of the first tunnel knot 30 InmGa1-mAs1-nNn, forming doping content is 3 × 1017cm-3, growth thickness is the p-type base of 3.0 microns 41.Then on p-type base 41, grow N-type InmGa1-mAs1-nNn, forming doping content is 2 × 1018cm-3, Growth thickness is the N-type launch site 42 of 0.2 micron.It is consequently formed that to have energy gap be 1.39eV's InmGa1-mAs1-nNnIntermediate cell layer 40.
(4) the second tunnel knot 50 is grown.
This second tunnel knot 50 includes P-type layer 52 and the N-type layer 51 of stacked on top of one another.Described InmGa1-mAs1-nNnThe surface, N-type launch site 42 of intermediate cell layer 40, grows N-type GaAs, and formation is mixed Miscellaneous concentration is 1 × 1019cm-3Above, growth thickness is the N-type layer 51 of 0.015 micron.Then at described N Growing P-type GaAs on type layer 51, forms doping content more than 1 × 1019cm-3, growth thickness is 0.015 micro- The P-type layer 52 of rice.
(5) growth AlpGa1-p-qInqP pushes up battery layers 60.Wherein, described AlpGa1-p-qInqP pushes up battery layers 60 P, q be respectively 3.6%, 49.0%.
This AlpGa1-p-qInqP top battery layers 60 includes N-type launch site 62 and the p-type base 61 of stacked on top of one another. First by mocvd method growing P-type Al in the P-type layer 52 of the second tunnel knot 50pGa1-p-qInqP, Forming doping content is 3 × 1017cm-3, growth thickness is the p-type base 61 of 3.0 microns.Then at p-type base N-type Al is grown in district 61pGa1-p-qInqP, forming doping content is 2 × 1018cm-3, growth thickness is 0.2 The N-type launch site 62 of micron.It is consequently formed and there is the Al that energy gap is 1.93eVpGa1-p-qInqP pushes up electricity Pond layer 60.
(6) growth GaAs contact layer 70 and the making of Ohmic electrode 80.At AlpGa1-p-qInqP pushes up battery layers The surface, N-type launch site 62 of 60, mocvd method growing P-type GaAs, its doping content is about 1×1017cm-3, growth thickness is 0.6 micron, forms GaAs contact layer 70.
Finally, ohm electricity is made respectively at the top of the bottom of GaAs substrate 10 and GaAs contact layer 70 Pole 80.
Certainly, the energy gap in above-described embodiment can also adjust within the specific limits, and adjusting range is ± 0.01eV。
Above-mentioned implementation only for technology design and the feature of the present invention are described, its object is to allow and is familiar with this The understanding of technology will appreciate that present disclosure and implements according to this, does not constitute protection scope of the present invention and appoints What limits.The technical scheme that all employing equivalents or equivalence are replaced and formed, all should fall and weigh in the present invention In the range of profit requirement is protected.

Claims (5)

1. the preparation method of a three-junction cascade solar cell, it is characterised in that comprise the steps:
Metalorganic chemical vapor deposition method is used to grow In the most successivelyxGa1-xAs1-yNyThe end Battery layers, the first tunnel knot, InxGa1-xAs1-yNyIntermediate cell layer, the second tunnel knot, AlpGa1-p-qInqP Top battery layers and GaAs contact layer；Again bottom described GaAs substrate and described GaAs contact layer top system Make Ohmic electrode；
Described InxGa1-xAs1-yNyThe energy gap of end battery layers is 0.94 ± 0.01eV；Described InxGa1-xAs1-yNyX, y of end battery layers is respectively 10.0%, 3.0%；
Described InmGa1-mAs1-nNnThe energy gap of intermediate cell layer is 1.39 ± 0.01eV；Described InmGa1-mAs1-nNnM, n of intermediate cell layer is respectively 1.0%, 0.30%；
Described AlpGa1-p-qInqThe energy gap of P top battery layers is 1.93 ± 0.01eV；Described AlpGa1-p-qInqP P, q of top battery layers are respectively 3.6%, 49.0%.
The preparation method of solar cell the most according to claim 1, it is characterised in that described InxGa1-xAs1-yNyEnd battery layers, described InxGa1-xAs1-yNyIntermediate cell layer, described AlpGa1-p-qInqP Top battery layers respectively includes N-type launch site and the p-type base of stacked on top of one another.
The preparation method of solar cell the most according to claim 2, it is characterised in that described N-type is sent out Penetrating district's doping content is 2 × 1018cm-3, growth thickness is 0.2 micron；The doping content of described p-type base is 3×1017cm-3, growth thickness is 3.0 microns.
The preparation method of solar cell the most according to claim 1, it is characterised in that described first tunnel Road knot and/or the second tunnel knot include P-type layer and the N-type layer of stacked on top of one another, and the material of described N-type layer is N-type GaInP or N-type GaAs；The material of described P-type layer is p-type GaAs or p-type AlGaInP； The doping content of described N-type layer or P-type layer is not less than 1 × 1019cm-3, growth thickness is 0.015 micron.
5., according to the preparation method of the three-junction cascade solar cell described in any one of Claims 1 to 4, it is special Levy and be, including the In grown the most on gaas substratesxGa1-xAs1-yNyEnd battery layers, the first tunnel knot, InmGa1-mAs1-nNnIntermediate cell layer, the second tunnel knot, AlpGa1-p-qInqP top battery layers and GaAs contact Layer；Bottom described GaAs substrate and described GaAs contact layer top is additionally provided with Ohmic electrode.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
CN202503000U (en) * 2012-02-21 2012-10-24 厦门市三安光电科技有限公司 High-efficiency triple-junction solar battery

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100282306A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Multijunction Solar Cells with Group IV/III-V Hybrid Alloys

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
CN202503000U (en) * 2012-02-21 2012-10-24 厦门市三安光电科技有限公司 High-efficiency triple-junction solar battery

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