CN103258906B - Three-junction cascade solar cell structure and manufacturing method thereof - Google Patents

Three-junction cascade solar cell structure and manufacturing method thereof Download PDF

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Publication number
CN103258906B
CN103258906B CN201310153013.8A CN201310153013A CN103258906B CN 103258906 B CN103258906 B CN 103258906B CN 201310153013 A CN201310153013 A CN 201310153013A CN 103258906 B CN103258906 B CN 103258906B
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gaas
layer
battery layers
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solar cell
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CN103258906A (en
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李奎龙
董建荣
孙玉润
曾徐路
赵勇明
于淑珍
赵春雨
杨辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to the technical field of solar energy, in particular to a manufacturing method of a three-junction cascade solar cell. The manufacturing method comprises the following steps that a GaAs1-x-yNxBiy bottom cell layer, a first tunnel junction, a BmGa1-mAs1-nBin intermediate cell layer, a second tunnel junction, an AlpGa1-pAs top cell layer and a GaAs contact layer grow sequentially on a GaAs substrate through adoption of an organometallic chemical vapor deposition method; ohmic electrodes are manufactured at the bottom of the GaAs substrate and the top of the GaAs contact layer. The invention further provides a structure of the solar cell. According to the three-junction cascade solar cell and the manufacturing method, subsection absorption and utilization of solar spectra and current matching of cells are achieved, the cell layers are matched with GaAs lattices, high cell efficiency can be obtained, and the three-junction cascade solar cell is a potential and ideal solar cell material.

Description

A kind of three-junction cascade solar cell structure and preparation method thereof
Technical field
The present invention relates to technical field of solar batteries, especially a kind of structure of three-junction cascade solar cell and its system Make method.
Background technology
In iii-v race area of solar cell, generally adopt many knot body system to realize the grading absorption to solar spectrum and utilize, To obtain higher conversion efficiency.Studying more and technology more maturation system at present is that gainp/gaas/ge tri- ties electricity Pond.The highest conversion efficiency that this battery reaches at present is 32-33%.But it is ge electricity that this system yet suffers from a subject matter Pond covers wider spectrum, and its short circuit current maximum can reach 2 times of other two junction batteries, due to making of being connected by three junction batteries About, the energy of the corresponding solar spectrum of ge battery is not by abundant conversion.Calculating shows with 1.93ev/1.39ev/ Conversion efficiency under 100 times of optically focused for the three-joint solar cell of 0.94ev band gap combination is more than 51%.
A kind of material enabling the combination of this band gap is alinas/ingaasp/ingaas, but the lattice of this material is normal Number and gaas substrate have about 2.5% mismatch, and still lack the substrate with above-mentioned material lattice constant match at present.For terrible To the alinas/ingaasp/ingaas material of 1.93ev/1.39ev/0.94ev gap combination, a kind of common method is to utilize Lattice mutation technology, in gaas Grown lattice varied buffer layer, is realized the transition of lattice paprmeter, but this technology is to material Material growth is put forward higher requirement, and the introducing of simultaneous buffering layer also brings more defect, reduces the performance of battery.
Content of the invention
For solving the above problems, the present invention proposes a kind of preparation method of three-junction cascade solar cell, walks including following Rapid:
Gaas is grown on gaas substrate successively using Metalorganic chemical vapor deposition method1-x-ynxbiyBottom battery layers, First tunnel knot, bmga1-mas1-nbinIntermediate cell layer, the second tunnel knot, alpga1-pAs top battery layers and gaas contact layer；Again Make Ohmic electrode in described gaas substrate bottom and described gaas contact layer top.
Preferably, described gaas1-x-ynxbiyBottom battery layers, described bmga1-mas1-nbinIntermediate cell layer, described alpga1-pAs pushes up N-shaped launch site and the p-type base that battery layers all respectively include stacked on top of one another.
Preferably, described N-shaped launch site doping content is 2 × 1018cm-3, growth thickness is 0.2 micron；Described p-type The doping content of base is 3 × 1017cm-3, growth thickness is 3.0 microns.
Preferably, described gaas1-x-ynxbiyThe energy gap of bottom battery layers is 0.94 ± 0.01ev；Described gaas1-x- ynxbiyX, y of bottom battery layers is respectively 1.45%, 2.56%.
Preferably, described bmga1-mas1-nbinThe energy gap of intermediate cell layer is 1.39 ± 0.01ev；Described bmga1- mas1-nbinM, n of intermediate cell layer is respectively 0.23%, 0.30%.
Preferably, described alpga1-pThe energy gap that as pushes up battery layers is 1.93 ± 0.01ev；Described alpga1-pAs top electricity The p of pond layer is 40.6%.
Preferably, described first tunnel knot and/or the second tunnel knot include p-type layer and the n-layer of stacked on top of one another, described The material of n-layer is N-shaped gainp or N-shaped gaas；The material of described p-type layer is p-type gaas or p-type algaas；Described N-shaped The doping content of layer or p-type layer is all not less than 1 × 1019cm-3, growth thickness is 0.015 micron.
The present invention also provides the structure of the solaode obtaining using above-mentioned preparation method, including successively in gaas substrate The gaas of upper growth1-x-ynxbiyBottom battery layers, the first tunnel knot, bmga1-mas1-nbinIntermediate cell layer, the second tunnel knot, alpga1-pAs top battery layers and gaas contact layer；Described gaas substrate bottom and described gaas contact layer top are additionally provided with ohm Electrode.
The present invention, by adjusting to gaas and introducing tetra- kinds of elements of al, b, n, bi, keeps constant same making lattice paprmeter When can in a big way interior adjust material bandwidth, finally obtain 1.93ev, 1.39ev, 0.94ev band gap combination, realize The grading absorption of solar spectrum is utilized.And, the currents match between each sub- battery of the present invention, lattice paprmeter and gaas substrate Coupling, can obtain higher battery efficiency.Using traditional method growth, growth course is simple.The present invention make each battery layers with Gaas Lattice Matching simultaneously has required bandwidth, makes one kind potentially preferable solar cell material.
Brief description
Fig. 1 is the structural representation of solaode of the present invention.
Specific embodiment
Below, with reference to the accompanying drawings the specific embodiment of the invention is elaborated.
Refering to shown in Fig. 1, the three-junction cascade solar cell of the present invention, its bottom, in, three battery layers in top, be respectively gaas1-x-ynxbiy、bmga1-mas1-nbin、alpga1-pAs material is formed, and concrete structure is: raw on gaas substrate 10 successively Long gaas1-x-ynxbiyBottom battery layers 20, the first tunnel knot 30, bmga1-mas1-nbinIntermediate cell layer 40, the second tunnel knot 50alpga1-pAs top battery layers 60 and gaas contact layer 70；Described gaas substrate bottom and described gaas contact layer top also set There is Ohmic electrode.
The preparation method of three-junction cascade solar cell of the present invention comprises the following steps:
(1) grow gaas1-x-ynxbiyBottom battery layers 20, wherein, this gaas1-x-ynxbiyX, y of bottom battery layers 20 are respectively 1.45%th, 2.56%,
This gaas1-x-ynxbiyBottom battery layers 20 include N-shaped launch site and the p-type base of stacked on top of one another.First in p-type On gaas substrate 10, p-type gaas is grown by Metalorganic chemical vapor deposition method (mocvd)1-x-ynxbiy, form doping content For 3 × 1017cm-3, growth thickness is 3.0 microns of p-type base 21.Then in p-type base growing n-type gaas1-x-ynxbiy, shape Doping content is become to be 2 × 1018cm-3, growth thickness is 0.2 micron of N-shaped launch site 22.It is consequently formed and with energy gap be The gaas of 0.94ev1-x-ynxbiyBottom battery layers 20.
(2) grow the first tunnel knot 30.
This first tunnel knot 30 includes p-type layer 32 and the n-layer 31 of stacked on top of one another.In described gaas1-x-ynxbiyBottom battery N-shaped launch site 22 surface of layer 20, growing n-type gainp, form doping content 1 × 1019cm-3More than, growth thickness is 0.015 micron of n-layer 31.Then grow p-type gaas in described n-layer 31, form doping content and be more than 1 × 1019cm-3, Growth thickness is 0.015 micron of p-type layer 32.
(3) grow bmga1-mas1-nbinIntermediate cell layer 40.Wherein, described bmga1-mas1-nbinIntermediate cell layer 40 M, n are respectively 0.23%, 0.30%.
This bmga1-mas1-nbinIntermediate cell layer 40 includes N-shaped launch site 42 and the p-type base 41 of stacked on top of one another.Exist first In the p-type layer 32 of the first tunnel knot 30, p-type b is grown by mocvd methodmga1-mas1-nbin, forming doping content is 3 × 1017cm-3, growth thickness is 3.0 microns of p-type base 41.Then growing n-type b on p-type base 41mga1-mas1-nbin, form doping Concentration is 2 × 1018cm-3, growth thickness is 0.2 micron of N-shaped launch site 42.Being consequently formed with energy gap is 1.39ev Bmga1-mas1-nbinIntermediate cell layer 40.
(4) grow the second tunnel knot 50.
This second tunnel knot 50 includes p-type layer 52 and the n-layer 51 of stacked on top of one another.In described bmga1-mas1-nbinMiddle electricity N-shaped launch site 42 surface of pond layer 40, growing n-type gainp, form doping content 1 × 1019cm-3More than, growth thickness is 0.015 micron of n-layer 51.Then grow p-type gaas in described n-layer 51, form doping content and be more than 1 × 1019cm-3, Growth thickness is 0.015 micron of p-type layer 52.
(5) grow alpga1-pAs pushes up battery layers 60.Wherein, described alpga1-pThe p that as pushes up battery layers 60 is 40.6%.
This alpga1-pAs pushes up N-shaped launch site 62 and the p-type base 61 that battery layers 60 include stacked on top of one another.First second In the p-type layer 52 of tunnel knot 50, p-type al is grown by mocvd methodpga1-pAs, forming doping content is 3 × 1017cm-3, growth thickness Spend the p-type base 61 for 3.0 microns.Then growing n-type al on p-type base 61pga1-pAs, formed doping content be 2 × 1018cm-3, growth thickness is 0.2 micron of N-shaped launch site 62.It is consequently formed and there is the al that energy gap is 1.93evpga1-pas Top battery layers 60.
(6) making of growth gaas contact layer 70 and Ohmic electrode 80.In alpga1-pAs pushes up the N-shaped transmitting of battery layers 60 Area 62 surface, mocvd method grows p-type gaas, and its doping content is about 1 × 1017cm-3, growth thickness be 0.6 micron, formed Gaas contact layer 70.
Finally, make Ohmic electrode 80 respectively at the top of the bottom of gaas substrate 10 and gaas contact layer 70.
Certainly, the energy gap in above-described embodiment can also adjust within the specific limits, and adjusting range is ± 0.01ev.
Above-mentioned implementation only technology design to illustrate the invention and feature, its object is to allow and is familiar with technique Understanding will appreciate that present disclosure and implements according to this, and protection scope of the present invention is not limited in any way.All employings etc. The technical scheme being formed with conversion or equivalence replacement, all should fall in the range of the claims in the present invention are protected.

Claims (3)

1. a kind of preparation method of three-junction cascade solar cell is it is characterised in that comprise the steps:
Gaas is grown on gaas substrate successively using Metalorganic chemical vapor deposition method1-x-ynxbiyBottom battery layers, first Tunnel knot, bmga1-mas1-nbinIntermediate cell layer, the second tunnel knot, alpga1-pAs top battery layers and gaas contact layer；Again in institute State gaas substrate bottom and described gaas contact layer top and make Ohmic electrode；
Described gaas1-x-ynxbiyThe energy gap of bottom battery layers is 0.94 ± 0.01ev；Described gaas1-x-ynxbiyBottom battery layers X, y be respectively 1.45%, 2.56%；
Described bmga1-mas1-nbinThe energy gap of intermediate cell layer is 1.39 ± 0.01ev；Described bmga1-mas1-nbinMiddle electricity M, n of pond layer is respectively 0.23%, 0.30%；
Described alpga1-pThe energy gap that as pushes up battery layers is 1.93 ± 0.01ev；Described alpga1-pAs push up battery layers p be 40.6%；
Described gaas1-x-ynxbiyBottom battery layers, described bmga1-mas1-nbinIntermediate cell layer, described alpga1-pAs pushes up battery layers All respectively include N-shaped launch site and the p-type base of stacked on top of one another；
Described N-shaped launch site doping content is 2 × 1018cm-3, growth thickness is 0.2 micron；The doping of described p-type base is dense Spend for 3 × 1017cm-3, growth thickness is 3.0 microns.
2. according to claim 1 the preparation method of solaode it is characterised in that described first tunnel knot and/or Two tunnel knot include p-type layer and the n-layer of stacked on top of one another, and the material of described n-layer is N-shaped gainp or N-shaped gaas；Described p The material of type layer is p-type gaas or p-type algaas；The doping content of described n-layer or p-type layer is all not less than 1 × 1019cm-3, growth thickness is 0.015 micron.
3. the preparation method of the three-junction cascade solar cell according to any one of claim 1～2 is it is characterised in that wrap Include the gaas successively in gaas Grown1-x-ynxbiyBottom battery layers, the first tunnel knot, bmga1-mas1-nbinIntermediate cell Layer, the second tunnel knot, alpga1-pAs top battery layers and gaas contact layer；Described gaas substrate bottom and described gaas contact layer Top is additionally provided with Ohmic electrode.
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