CN103258179A - Method for improving sensitivity of charge pump - Google Patents
Method for improving sensitivity of charge pump Download PDFInfo
- Publication number
- CN103258179A CN103258179A CN2013101420903A CN201310142090A CN103258179A CN 103258179 A CN103258179 A CN 103258179A CN 2013101420903 A CN2013101420903 A CN 2013101420903A CN 201310142090 A CN201310142090 A CN 201310142090A CN 103258179 A CN103258179 A CN 103258179A
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- charge pump
- chip
- mos transistor
- capacitor
- biasing module
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Dc-Dc Converters (AREA)
Abstract
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Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310142090.3A CN103258179B (en) | 2013-04-23 | 2013-04-23 | Intelligent biasing module regulates the method for MOS transistor equivalence threshold voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310142090.3A CN103258179B (en) | 2013-04-23 | 2013-04-23 | Intelligent biasing module regulates the method for MOS transistor equivalence threshold voltage |
Publications (2)
Publication Number | Publication Date |
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CN103258179A true CN103258179A (en) | 2013-08-21 |
CN103258179B CN103258179B (en) | 2016-03-09 |
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Family Applications (1)
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CN201310142090.3A Active CN103258179B (en) | 2013-04-23 | 2013-04-23 | Intelligent biasing module regulates the method for MOS transistor equivalence threshold voltage |
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CN (1) | CN103258179B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111313568A (en) * | 2020-03-13 | 2020-06-19 | 华中科技大学 | Energy acquisition circuit for wearable equipment and power management circuit thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002330067A (en) * | 2001-05-01 | 2002-11-15 | Sony Corp | Charge pump circuit and phase synchronizing loop circuit |
CN102386789A (en) * | 2010-08-27 | 2012-03-21 | Nxp股份有限公司 | High efficiency charge pump |
JP2012223007A (en) * | 2011-04-12 | 2012-11-12 | Nippon Telegr & Teleph Corp <Ntt> | Dc-dc converter |
-
2013
- 2013-04-23 CN CN201310142090.3A patent/CN103258179B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002330067A (en) * | 2001-05-01 | 2002-11-15 | Sony Corp | Charge pump circuit and phase synchronizing loop circuit |
CN102386789A (en) * | 2010-08-27 | 2012-03-21 | Nxp股份有限公司 | High efficiency charge pump |
JP2012223007A (en) * | 2011-04-12 | 2012-11-12 | Nippon Telegr & Teleph Corp <Ntt> | Dc-dc converter |
Non-Patent Citations (1)
Title |
---|
靳钊等: "无源超高频RFID低压高效电荷泵的设计与实现", 《电子科技大学学报》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111313568A (en) * | 2020-03-13 | 2020-06-19 | 华中科技大学 | Energy acquisition circuit for wearable equipment and power management circuit thereof |
CN111313568B (en) * | 2020-03-13 | 2022-03-25 | 华中科技大学 | Energy acquisition circuit for wearable equipment and power management circuit thereof |
Also Published As
Publication number | Publication date |
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CN103258179B (en) | 2016-03-09 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 2, 519000 floor, B building, doctor building, 1 Harbin Road, hi tech Zone, Guangdong, Zhuhai Applicant after: Wu Xinyan Address before: 710049 Shaanxi province Xi'an Beilin District Xianning road Xi'an Jiao Tong University village 27 3 to 504 homes Applicant before: Wu Xinyan |
|
COR | Change of bibliographic data | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190716 Address after: 528000 B201, No. 1 Hagong Road, Tangjiawan Town, Zhuhai City, Guangdong Province Patentee after: ZHUHAI CRYSTONE TECHNOLOGY Co.,Ltd. Address before: 2, 519000 floor, B building, doctor building, 1 Harbin Road, hi tech Zone, Guangdong, Zhuhai Patentee before: Wu Xinyan |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Method for Adjusting the Equivalent Threshold Voltage of MOS Transistors Using an Intelligent Bias Module Effective date of registration: 20230330 Granted publication date: 20160309 Pledgee: Guangfa Bank Co.,Ltd. Zhuhai Jinwan Branch Pledgor: ZHUHAI CRYSTONE TECHNOLOGY Co.,Ltd. Registration number: Y2023980036691 |