CN103258179A - Method for improving sensitivity of charge pump - Google Patents

Method for improving sensitivity of charge pump Download PDF

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Publication number
CN103258179A
CN103258179A CN2013101420903A CN201310142090A CN103258179A CN 103258179 A CN103258179 A CN 103258179A CN 2013101420903 A CN2013101420903 A CN 2013101420903A CN 201310142090 A CN201310142090 A CN 201310142090A CN 103258179 A CN103258179 A CN 103258179A
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charge pump
chip
mos transistor
capacitor
biasing module
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CN103258179B (en
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吴欣延
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Zhuhai Crystone Technology Co ltd
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Abstract

The invention discloses a method for improving sensitivity of a charge pump in an ultrahigh frequency radio frequency identification electronic tag chip. An antenna of the electronic tag chip is connected with the charge pump and an auxiliary charge pump in a bias module, an antenna on an electronic tag receives an ultrahigh frequency electromagnetic wave sent by a reader, input voltage is produced at an input end port of a UHF-RFID chip, the bias module adjusts the bias voltage of an MOS transistor in the charge pump in a self-adapting mode according to the input voltage, and the bias voltage which is capable of automatically compensating for and adjusting an MOS transistor switch due to the change of the semiconductor manufacturing technique, the temperature changes and the change of outside ultrahigh frequency electromagnetic wave strength can be tracked, so that the converting efficiency of the charge pump under weak ultrahigh frequency electromagnetic wave strength is effectively improved, and the read-write distance between the electronic tag and the reader is effectively lengthened.

Description

A kind of raising charge pump sensitivity of method
Technical field
The present invention relates to super high frequency radio frequency identification UHF-RFID systems technology field, be specifically related to a kind of raising charge pump sensitivity of method.
  
Background technology
Super high frequency radio frequency identification UHF-RFID is a kind of contactless passive automatic identification technology based on back scattering communication and wireless power transmission principle.A typical UHF-RFID system comprises reader READER and electronic tag TAG.Electronic tag mainly is made up of antenna and UHF-RFID chip.Reader emission uhf electromagnetic wave is to electronic tag, electronic tag extract by antenna that work institute energy requirement activates from uhf electromagnetic wave and with the reader communication.Usually the electronic tag minimum voltage of wanting operate as normal to need extract from the uhf electromagnetic wave of reader emission is 200 millivolts, charge pump of electronic tag needs with this low voltage transition to higher voltage, for other module in the chip provides operating voltage.Switch in the electronic tag charge pump is realized by the metal-oxide semiconductor (MOS) MOS transistor that usually the threshold voltage of MOS transistor is generally 700 millivolts.The voltage that obtains from reader emission uhf electromagnetic wave when electronic tag is during less than transistorized threshold voltage, and charge pump will not worked, and therefore, the reading/writing distance between reader and the electronic tag just reduces greatly.
  
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of intelligent biasing module, it regulates the equivalent threshold voltage of charge pump mos transistor switch in the super high frequency radio frequency identification electronic label chip adaptively.Reading/writing distance between reader and electronic tag is far away, namely the voltage that from uhf electromagnetic wave, obtains of electronic tag hour, the equivalent threshold voltage of mos transistor switch is just very little, but makes the MOS transistor normally.When the reading/writing distance between reader and the electronic tag is nearer, be that the voltage that obtains from uhf electromagnetic wave of electronic tag is when higher, the equivalent threshold voltage of mos transistor switch just raises, and avoids charge pump to produce too high operating voltage MOS transistor is punctured.Biasing module also can intelligently compensate owing to the influence to the threshold voltage of MOS transistor of technology, temperature and voltage.Adopt electronic tag and the reading/writing distance between the reader of intelligent biasing module to improve greatly.
  
In order to achieve the above object, the technical solution used in the present invention is:
Propose a kind of intelligent biasing module, it regulates the equivalent threshold voltage of charge pump mos transistor switch in the super high frequency radio frequency identification electronic label chip adaptively, thereby the reading/writing distance between electronic tag and the reader is improved greatly.
Intelligent biasing module is regulated the method for MOS transistor equivalence threshold voltage, may further comprise the steps:
The first step, the RFP end of super high frequency radio frequency being identified electronic label antenna is connected with the RFP end of charge pump in the chip, the RFN end of super high frequency radio frequency being identified electronic label antenna is connected with the RFN end of charge pump in the chip, the RFP end of super high frequency radio frequency being identified electronic label antenna is connected with the RFP end of biasing module in the chip, the RFN end of super high frequency radio frequency being identified electronic label antenna is connected with the RFN end of biasing module in the chip, the RFN end of charge pump in the chip is connected with the source end s of MOS transistor MOS11 in the charge pump, in the chip RFP of charge pump end respectively with capacitor C 11, C21, link to each other with the port one of Cn1, in the chip RFN of charge pump end respectively with capacitor C 12, C22, link to each other with the port one of Cn2, the b11 of charge pump end links to each other with the grid end g of MOS transistor MOS11 in the chip, the b12 of charge pump end links to each other with the grid end g of MOS transistor MOS12 in the chip, the b21 of charge pump end links to each other with the grid end g of MOS transistor MOS21 in the chip, the b22 of charge pump end links to each other with the grid end g of MOS transistor MOS22 in the chip, the bn1 of charge pump end links to each other with the grid end g of MOS transistor MOSn1 in the chip, the bn2 of charge pump end links to each other with the grid end g of MOS transistor MOSn2 in the chip, 2 ends of capacitor C 11 are linked to each other with the drain terminal d of MOS transistor MOS11 and MOS12 respectively, the 2 ends difference MOS transistor MOS21 of capacitor C 21 and the drain terminal d of MOS22 are linked to each other, 2 ends of capacitor C n1 are linked to each other with the drain terminal d of MOS transistor MOSn1 and MOSn2 respectively, 2 ends of capacitor C 12 are linked to each other with the source end s of MOS transistor MOS12 and MOS21 respectively, 2 ends of capacitor C 22 are linked to each other with the source end s of MOS transistor MOS22,2 ends of capacitor C n2 are linked to each other with the source end s of MOS transistor MOSn2, the RFN of biasing module in chip end is connected with the source end s of MOS transistor MM11 and the grid end g of MOS transistor MM12 in the auxiliary charge pump respectively, in the chip RFP of biasing module end respectively with auxiliary charge pump in capacitor C C11, CC21, link to each other with the port one of CCn1, in the chip RFN of biasing module end respectively with capacitor C C12, CC22, link to each other with the port one of CCn2, in the chip b11 of biasing module end respectively with auxiliary charge pump in the source end s of MOS transistor MM12, the source end s of MM21, the grid end g of MM11, the grid end g of MM22,2 ends of capacitor C C12 link to each other with the input end of low-pass filtering/bias compensation module LPF1/OFFSET, the b12 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPF1/OFFSET in the chip, in the chip b21 of biasing module hold respectively with auxiliary charge pump in the source end s of MOS transistor MM22, the grid end g of MM21,2 ends of capacitor C C22 link to each other with the input end of low-pass filtering/bias compensation module LPF2/OFFSET, the b22 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPF2/OFFSET in the chip ..., in the chip bn1 of biasing module end respectively with auxiliary charge pump in the source end s of MOS transistor MMn2, the grid end g of MMn1,2 ends of capacitor C Cn2 link to each other with the input end of low-pass filtering/bias compensation module LPFn/OFFSET, and the bn2 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPFn/OFFSET in the chip, and the source end s of MOS transistor MMn1 links to each other with the grid end g of MMn2 in the auxiliary charge pump, 2 ends of capacitor C C11 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MM11 and the drain terminal d of MOS transistor MM12 respectively, 2 ends of capacitor C C21 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MM21 and the drain terminal d of MOS transistor MM22 respectively ..., 2 ends of the capacitor C Cn1 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MMn1 and the drain terminal d of MOS transistor MMn2 respectively, the b11 output terminal of biasing module links to each other with the b11 input end of charge pump in the chip in the chip, the b12 output terminal of biasing module links to each other with the b12 input end of charge pump in the chip in the chip, and the b21 output terminal of biasing module links to each other with the b21 input end of charge pump in the chip in the chip, and the b22 output terminal of biasing module links to each other with the b22 input end of charge pump in the chip in the chip, the bn1 output terminal of biasing module links to each other with the bn1 input end of charge pump in the chip in the chip, and the bn2 output terminal of biasing module links to each other with the bn2 input end of charge pump in the chip in the chip
Second step, super high frequency radio frequency identification UHF-RFID reader READER outwards launches uhf electromagnetic wave, antenna on the electronic tag TAG receives this uhf electromagnetic wave and produce a voltage uin between the RFP of UHF-RFID chip and RFN input port, the size of uin is determined by the distance between reader and the electronic tag, distance is more far away, uin is more little
The 3rd step, voltage uin is connected RFP and the RFN input port of the interior auxiliary charge pump of biasing module in the electronic label chip, auxiliary charge pump is made up of n level auxiliary charge pump unit, progression n is generally 4 to 8, concrete progression is determined by the conversion efficiency of semiconductor fabrication process and auxiliary charge pump, auxiliary charge pump does not have load, it just provides bias voltage to charge pump, because auxiliary charge pump and charge pump are to be integrated in the same semi-conductor chip, auxiliary charge pump is traceable because the variation of semiconductor fabrication process to the bias voltage that the charge pump mos transistor switch provides, the variation of variation of temperature and extraneous uhf electromagnetic wave intensity and compensate and adjust bias voltage automatically, make charge pump be issued to maximum conversion efficiency in weak uhf electromagnetic wave intensity, namely, the bias voltage that auxiliary charge pump provides under weak uhf electromagnetic wave intensity makes that effective threshold voltage of mos transistor switch is close to 100 millivolts in the charge pump, the bias voltage that auxiliary charge pump provides under strong uhf electromagnetic wave intensity makes effective threshold voltage rising of mos transistor switch in the charge pump, to reduce the conversion efficiency of charge pump, thereby avoiding charge pump to produce too high operating voltage punctures MOS transistor
The 4th step, the bias voltage b11 that auxiliary charge pump produces, b21,, bn1 is directly connected to the b11 of charge pump, b21,, bn1 input port, the bias voltage b11 that auxiliary charge pump produces, b21 ..., bn1 is connected to low-pass filtering/bias compensation module LPF1/OFFSET simultaneously, LPF2/OFFSET ... and the input end of LPFn/OFFSET, low-pass filtering/bias compensation module is biased compensation output offset signal b12 by low-pass filtering, b22 ..., and bn2, low-pass filtering is realized by the RC wave filter, bias compensation is realized by MOS transistor, the offset signal b12 of low-pass filtering/bias compensation module output, b22, be directly connected to the b12 of charge pump with bn2, b22 ... with the bn2 input port
The 5th step, antenna on the electronic tag TAG receives uhf electromagnetic wave and produce input voltage Uin between the RFP of UHF-RFID chip and RFN input port, this voltage U in be connected simultaneously charge pump in the electronic label chip RFP and RFN input port, charge pump is made up of n level charge pump unit, progression n is generally 4 to 8, concrete progression is determined by the conversion efficiency of semiconductor fabrication process and charge pump, bias voltage (the grid end g of the metal-oxide-semiconductor) b11 of the MOS transistor in the charge pump, b12, b21, b22, bn1 and bn2 are by the b11 of biasing module, b12, b21, b22,, bn1 and bn2 output signal provide, and the output signal Vout of charge pump provides operating voltage for other circuit module of super high frequency radio frequency identification UHF-RFID chip.
Semiconductor fabrication process changes because the present invention is traceable, the variation of temperature variation and extraneous uhf electromagnetic wave intensity and compensate and adjust the bias voltage of charge pump mos transistor switch automatically, therefore improve the conversion efficiency of charge pump under weak uhf electromagnetic wave intensity effectively, thereby improved the reading/writing distance between electronic tag and the reader widely.
[0009] description of drawings
Fig. 1 is reader of the present invention and electronic tag synoptic diagram.
Fig. 2 is biasing module hardware connection diagram of the present invention.
Fig. 3 is charge pump module hardware connection diagram of the present invention.
  

Claims (1)

1. intelligent biasing module is regulated the method for MOS transistor equivalence threshold voltage, may further comprise the steps:
The first step, the RFP end of super high frequency radio frequency being identified electronic label antenna is connected with the RFP end of charge pump in the chip, the RFN end of super high frequency radio frequency being identified electronic label antenna is connected with the RFN end of charge pump in the chip, the RFP end of super high frequency radio frequency being identified electronic label antenna is connected with the RFP end of biasing module in the chip, the RFN end of super high frequency radio frequency being identified electronic label antenna is connected with the RFN end of biasing module in the chip, the RFN end of charge pump in the chip is connected with the source end s of MOS transistor MOS11 in the charge pump, in the chip RFP of charge pump end respectively with capacitor C 11, C21, link to each other with the port one of Cn1, in the chip RFN of charge pump end respectively with capacitor C 12, C22, link to each other with the port one of Cn2, the b11 of charge pump end links to each other with the grid end g of MOS transistor MOS11 in the chip, the b12 of charge pump end links to each other with the grid end g of MOS transistor MOS12 in the chip, the b21 of charge pump end links to each other with the grid end g of MOS transistor MOS21 in the chip, the b22 of charge pump end links to each other with the grid end g of MOS transistor MOS22 in the chip, the bn1 of charge pump end links to each other with the grid end g of MOS transistor MOSn1 in the chip, the bn2 of charge pump end links to each other with the grid end g of MOS transistor MOSn2 in the chip, 2 ends of capacitor C 11 are linked to each other with the drain terminal d of MOS transistor MOS11 and MOS12 respectively, the 2 ends difference MOS transistor MOS21 of capacitor C 21 and the drain terminal d of MOS22 are linked to each other, 2 ends of capacitor C n1 are linked to each other with the drain terminal d of MOS transistor MOSn1 and MOSn2 respectively, 2 ends of capacitor C 12 are linked to each other with the source end s of MOS transistor MOS12 and MOS21 respectively, 2 ends of capacitor C 22 are linked to each other with the source end s of MOS transistor MOS22,2 ends of capacitor C n2 are linked to each other with the source end s of MOS transistor MOSn2, the RFN of biasing module in chip end is connected with the source end s of MOS transistor MM11 and the grid end g of MOS transistor MM12 in the auxiliary charge pump respectively, in the chip RFP of biasing module end respectively with auxiliary charge pump in capacitor C C11, CC21, link to each other with the port one of CCn1, in the chip RFN of biasing module end respectively with capacitor C C12, CC22, link to each other with the port one of CCn2, in the chip b11 of biasing module end respectively with auxiliary charge pump in the source end s of MOS transistor MM12, the source end s of MM21, the grid end g of MM11, the grid end g of MM22,2 ends of capacitor C C12 link to each other with the input end of low-pass filtering/bias compensation module LPF1/OFFSET, the b12 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPF1/OFFSET in the chip, in the chip b21 of biasing module hold respectively with auxiliary charge pump in the source end s of MOS transistor MM22, the grid end g of MM21,2 ends of capacitor C C22 link to each other with the input end of low-pass filtering/bias compensation module LPF2/OFFSET, the b22 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPF2/OFFSET in the chip ..., in the chip bn1 of biasing module end respectively with auxiliary charge pump in the source end s of MOS transistor MMn2, the grid end g of MMn1,2 ends of capacitor C Cn2 link to each other with the input end of low-pass filtering/bias compensation module LPFn/OFFSET, and the bn2 of biasing module end links to each other with the output terminal of low-pass filtering/bias compensation module LPFn/OFFSET in the chip, and the source end s of MOS transistor MMn1 links to each other with the grid end g of MMn2 in the auxiliary charge pump, 2 ends of capacitor C C11 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MM11 and the drain terminal d of MOS transistor MM12 respectively, 2 ends of capacitor C C21 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MM21 and the drain terminal d of MOS transistor MM22 respectively ..., 2 ends of the capacitor C Cn1 in the chip in the biasing module auxiliary charge pump link to each other with the drain terminal d of MOS transistor MMn1 and the drain terminal d of MOS transistor MMn2 respectively, the b11 output terminal of biasing module links to each other with the b11 input end of charge pump in the chip in the chip, the b12 output terminal of biasing module links to each other with the b12 input end of charge pump in the chip in the chip, and the b21 output terminal of biasing module links to each other with the b21 input end of charge pump in the chip in the chip, and the b22 output terminal of biasing module links to each other with the b22 input end of charge pump in the chip in the chip, the bn1 output terminal of biasing module links to each other with the bn1 input end of charge pump in the chip in the chip, and the bn2 output terminal of biasing module links to each other with the bn2 input end of charge pump in the chip in the chip
Second step, super high frequency radio frequency identification UHF-RFID reader READER outwards launches uhf electromagnetic wave, antenna on the electronic tag TAG receives this uhf electromagnetic wave and produce a voltage U between the RFP of UHF-RFID chip and RFN input port, the size of Uin is determined by the distance between reader and the electronic tag, distance is more far away, Uin is more little
The 3rd step, voltage U in is connected RFP and the RFN input port of the interior auxiliary charge pump of biasing module in the electronic label chip, auxiliary charge pump is made up of n level auxiliary charge pump unit, progression n is generally 4 to 8, concrete progression is determined by the conversion efficiency of semiconductor fabrication process and auxiliary charge pump, auxiliary charge pump does not have load, it just provides bias voltage to charge pump, because auxiliary charge pump and charge pump are to be integrated in the same semi-conductor chip, auxiliary charge pump is traceable because the variation of semiconductor fabrication process to the bias voltage that the charge pump mos transistor switch provides, the variation of variation of temperature and extraneous uhf electromagnetic wave intensity and compensate and adjust bias voltage automatically, make charge pump be issued to maximum conversion efficiency in weak uhf electromagnetic wave intensity, namely, the bias voltage that auxiliary charge pump provides under weak uhf electromagnetic wave intensity makes that effective threshold voltage of mos transistor switch is close to 100 millivolts in the charge pump, the bias voltage that auxiliary charge pump provides under strong uhf electromagnetic wave intensity makes effective threshold voltage rising of mos transistor switch in the charge pump, to reduce the conversion efficiency of charge pump, thereby avoiding charge pump to produce too high operating voltage punctures MOS transistor
The 4th step, the bias voltage b11 that auxiliary charge pump produces, b21,, bn1 is directly connected to the b11 of charge pump, b21,, bn1 input port, the bias voltage b11 that auxiliary charge pump produces, b21 ..., bn1 is connected to low-pass filtering/bias compensation module LPF1/OFFSET simultaneously, LPF2/OFFSET ... and the input end of LPFn/OFFSET, low-pass filtering/bias compensation module is biased compensation output offset signal b12 by low-pass filtering, b22 ..., and bn2, low-pass filtering is realized by the RC wave filter, bias compensation is realized by MOS transistor, the offset signal b12 of low-pass filtering/bias compensation module output, b22, be directly connected to the b12 of charge pump with bn2, b22 ... with the bn2 input port
The 5th step, antenna on the electronic tag TAG receives uhf electromagnetic wave and produce input voltage Uin between the RFP of UHF-RFID chip and RFN input port, this voltage U in be connected simultaneously charge pump in the electronic label chip RFP and RFN input port, charge pump is made up of n level charge pump unit, progression n is generally 4 to 8, concrete progression is determined by the conversion efficiency of semiconductor fabrication process and charge pump, bias voltage (the grid end g of the metal-oxide-semiconductor) b11 of the MOS transistor in the charge pump, b12, b21, b22, bn1 and bn2 are by the b11 of biasing module, b12, b21, b22,, bn1 and bn2 output signal provide, and the output signal Vout of charge pump provides operating voltage for other circuit module of super high frequency radio frequency identification UHF-RFID chip.
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Cited By (1)

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CN111313568A (en) * 2020-03-13 2020-06-19 华中科技大学 Energy acquisition circuit for wearable equipment and power management circuit thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111313568A (en) * 2020-03-13 2020-06-19 华中科技大学 Energy acquisition circuit for wearable equipment and power management circuit thereof
CN111313568B (en) * 2020-03-13 2022-03-25 华中科技大学 Energy acquisition circuit for wearable equipment and power management circuit thereof

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