CN103247549B - A kind of photosensitive mask etching method of carborundum that shoulder height is monitored in real time - Google Patents
A kind of photosensitive mask etching method of carborundum that shoulder height is monitored in real time Download PDFInfo
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- CN103247549B CN103247549B CN201310113354.2A CN201310113354A CN103247549B CN 103247549 B CN103247549 B CN 103247549B CN 201310113354 A CN201310113354 A CN 201310113354A CN 103247549 B CN103247549 B CN 103247549B
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Abstract
The invention discloses a kind of photosensitive mask etching method of carborundum that shoulder height is monitored in real time, it is on carbofrax material, arrange multiple shoulder height monitoring pattern simultaneously, etch together with figure to be etched simultaneously, and removed by the photosensitive mask layer around one of them shoulder height monitoring pattern when needing detection etch height, thus carry out the monitoring of shoulder height.The present invention utilizes the nonvisualized mode of shoulder height monitoring pattern region multiexposure, multiple exposure, and when ensure that dry etching carborundum, the real-time monitoring of shoulder height and accurately control, effectively ensure that the raising of device performance and the carrying out of technological process.
Description
Technical field
Metallic carbide silicon etching technical field of the present invention, particularly relates to the real-time height method for supervising adopting photosensitive mask etching carbofrax material to form step.
Background technology
Semiconductor material with wide forbidden band carborundum (SiC) has the characteristics such as broad stopband width, high critical field strength, high heat conductance, high carrier saturation rate.SiC extension in SiC substrate manufactures high temperature, high frequency, the most important semi-conducting material of device such as high-power, has superpower performance and wide application prospect.In SiC device, the step of the differing heights that various needs accurately control is structure conventional during all kinds of transistor technology makes, so how to monitor shoulder height in real time in the step of micron order live width makes is realize one of high performance critical process of device.
Common method in the monitoring of SiC shoulder height is: adopt multi-step process to be formed after step, by removing all kinds of mask layers such as metal, medium, photoresist, then carries out step instrument or atomic force microscope carries out step-on testing.But this technique causes step to monitor in real time, after mask is removed, find that shoulder height does not reach requirement, then always there will be register partial difference during lines micron-sized by photoetching again, thus cause and occur that multiple step affects device performance.Therefore, just monitoring in real time can be carried out to the shoulder height of etching particularly important when mask is not removed, for in the step formation process that many needs are accurately monitored, the real-time monitoring of shoulder height ensure that the performance of device, also in much additional key technique, such as, in the formation of photo-etching mark, ensure that the intact realization of technological process.
Summary of the invention
Goal of the invention: for above-mentioned existing Problems existing and deficiency, the object of this invention is to provide a kind of carborundum photomask etching method that shoulder height is monitored in real time, solve and monitor step etching depth in real time in the carborundum step formation process of micron order live width, ensure when photo etched mask is not removed, etched features can reach by monitoring the requirement estimating shoulder height.
Technical scheme: for achieving the above object, the present invention by the following technical solutions: a kind of photosensitive mask etching method of carborundum that shoulder height is monitored in real time, comprises the following steps:
1) first, photosensitive mask layer is formed in carbofrax material surface-coated;
2) then expose, form figure to be etched and multiple independently shoulder height monitoring pattern;
3) then removed the photosensitive mask layer of correspondence position by development, expose described figure to be etched and shoulder height monitoring pattern;
4) and dry etching is carried out to the graphics field of exposing;
5) outer peripheral areas of a shoulder height monitoring pattern wherein, carrying out exposes and develop removes the photosensitive mask layer of corresponding position, thus forms comparison area;
6) step instrument is adopted to carry out measurement monitoring to the shoulder height of shoulder height monitoring pattern etching in comparison area;
7) when shoulder height does not reach technological requirement, step 4 is repeated) ~ 6) to meeting technological requirement to shoulder height.
Improve technique scheme, carborundum, before the photosensitive mask layer of coating, first cleans through hydrochloric acid solution.
As preferably, described carbofrax material is the epitaxial wafer that silicon carbide wafer, silicon carbide substrates grown one or more layers carborundum films.
As preferably, the method that silicon carbide applies photosensitive mask layer comprises following 2 steps: first adopt steam spraying process that adhesive HMDS is coated in carbofrax material surface; Then AZ sequence of photolithography glue or light-sensitive polyimide are coated to adhesive surface and form photosensitive mask layer, and this photosensitive mask layer thickness is 0.9 μm ~ 6 μm.
As preferably, during exposing operation, energy is 200 ~ 700mJ/cm
2, the mask aligner of use is manual type mask aligner or stepper.
As preferably, developing time is 0.5 ~ 2min; Developer solution adopts 3038 developer solutions or 441 developer solutions.
As preferably, described comparison area is square frame-shaped, and area is 1 ~ 10mm
2, and shoulder height monitoring pattern is in square frame center.
As preferably, described step instrument is probe physical contact formula.
Beneficial effect: compared with prior art, the present invention has the following advantages: utilize the nonvisualized mode of shoulder height monitoring pattern region multiexposure, multiple exposure, when ensure that dry etching carborundum, the real-time monitoring of shoulder height and accurately control, effectively ensure that the raising of device performance and the carrying out of technological process.
Accompanying drawing explanation
Fig. 1 is carbofrax material schematic diagram of the present invention;
Fig. 2 is the structural representation being coated with the carbofrax material after photosensitive mask layer of the present invention;
Fig. 3 is the distribution map of figure to be etched and shoulder height monitoring pattern after exposure imaging of the present invention;
Fig. 4 is the structural representation of shoulder height monitoring pattern of the present invention;
Fig. 5 is the structural representation of comparison area of the present invention after exposure imaging;
Fig. 6 is the structural representation that carbofrax material of the present invention forms step high etch.
Wherein, carbofrax material 1, photosensitive mask layer 2, shoulder height monitoring pattern 3, comparison area 4, figure to be etched 5.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
The photosensitive mask etching method of carborundum that shoulder height is monitored in real time, its concrete steps is as follows:
1, acid solution cleaning sic material 1 is used; Described acid solution hydrochloric acid and pure water, the weight proportion of its hydrochloric acid and pure water is 1:5; Carbofrax material 1 is silicon carbide epitaxial wafer; As shown in Figure 1;
2, on carbofrax material 11, adhesive, photosensitive mask layer 2 is applied; Adopt steam spraying process coating adhesive HMDS; Photosensitive mask is AZ sequence of photolithography glue 7908, and thickness is 1um; As shown in Figure 2;
3, photolithographic exposure figure 5 to be etched; Photolithographic exposure condition is energy 280mJ/cm
2, the mask aligner of use is stepper;
4, photolithographic exposure shoulder height monitoring pattern 3; Photolithographic exposure condition is energy 280mJ/cm
2, the mask aligner of use is stepper; Wherein this shoulder height monitoring pattern is consistent with the structure of figure to be etched, can better react the etching state of figure to be etched like this;
5, photoetching development removes corresponding photosensitive mask layer 2, thus forms figure 5 to be etched and multiple independently shoulder height monitoring pattern 3; The photoetching development time is 1min; Developer solution adopts 441 developer solutions; As shown in Figures 3 and 4;
6, then again expose in shoulder height monitoring pattern 3 outer peripheral areas, form the comparison area 4 of square frame-shaped, and make shoulder height monitoring pattern 3 be in the center of this comparison area 4, the photosensitive mask then variable color because of exposure around it, but do not affect dry etching.Conditions of exposure is energy 700mJ/cm
2, the mask aligner of use is stepper; Shoulder height monitoring pattern 3 is positioned at large square frame central authorities, and the area of large square frame is 10mm
2;
7, dry etching carbofrax material 1; What dry etching adopted is reactive ion etching or inductively coupled plasma method, and while carbofrax material 1 regional graphics etching to be etched, shoulder height monitoring pattern 3 region also etches;
8, removed the photosensitive mask exposed in one of them square frame-shaped comparison area 4 by photoetching development, expose etched shoulder height monitoring pattern 3; The photoetching development time is 1min; Developer solution adopts 441 developer solutions; As shown in Figure 5;
9, step instrument is adopted to carry out shoulder height monitoring to shoulder height monitoring pattern 3; Shoulder height is 50nm ~ 500nm; As shown in Figure 6; When being with the etching of etched features highly not meet technological requirement, repeating the step of 6 ~ 9, knowing that etching highly meets technological requirement, namely complete.
Claims (8)
1. the photosensitive mask etching method of carborundum monitored in real time of shoulder height, is characterized in that comprising the following steps:
1) first, photosensitive mask layer is formed in carbofrax material surface-coated;
2) then expose, form figure to be etched and multiple independently shoulder height monitoring pattern;
3) then removed the photosensitive mask layer of correspondence position by development, expose described figure to be etched and shoulder height monitoring pattern;
4) and dry etching is carried out to the graphics field of exposing;
5) outer peripheral areas of a shoulder height monitoring pattern wherein, carrying out exposes and develop removes the photosensitive mask layer of corresponding position, thus forms comparison area;
6) step instrument is adopted to carry out measurement monitoring to the shoulder height of shoulder height monitoring pattern etching in comparison area;
7) when shoulder height does not reach technological requirement, step 4 is repeated) ~ 6) to meeting technological requirement to shoulder height.
2. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: carborundum, before the photosensitive mask layer of coating, first cleans through hydrochloric acid solution.
3. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: described carbofrax material is the epitaxial wafer that silicon carbide wafer, silicon carbide substrates grown one or more layers carborundum films.
4. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: the method that silicon carbide applies photosensitive mask layer comprises following 2 steps: first adopt steam spraying process that adhesive HMDS is coated in carbofrax material surface; Then AZ sequence of photolithography glue or light-sensitive polyimide are coated to adhesive surface and form photosensitive mask layer, and this photosensitive mask layer thickness is 0.9 μm ~ 6 μm.
5. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: during exposing operation, energy is 200 ~ 700mJ/cm
2, the mask aligner of use is manual type mask aligner or stepper.
6. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: developing time is 0.5 ~ 2min; Developer solution adopts 3038 developer solutions or 441 developer solutions.
7. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, it is characterized in that: described comparison area is square frame-shaped, area is 1 ~ 10mm
2, and shoulder height monitoring pattern is in square frame center.
8. the photosensitive mask etching method of carborundum monitored in real time of shoulder height according to claim 1, is characterized in that: described step instrument is probe physical contact formula.
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| CN101320215A (en) * | 2008-06-02 | 2008-12-10 | 中国电子科技集团公司第五十五研究所 | Photo-etching mark on semiconductor material and its production method |
| CN102097286A (en) * | 2009-12-15 | 2011-06-15 | 北大方正集团有限公司 | Method for monitoring step profiler in measuring accuracy of chip groove depth |
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| CN101320215A (en) * | 2008-06-02 | 2008-12-10 | 中国电子科技集团公司第五十五研究所 | Photo-etching mark on semiconductor material and its production method |
| CN102097286A (en) * | 2009-12-15 | 2011-06-15 | 北大方正集团有限公司 | Method for monitoring step profiler in measuring accuracy of chip groove depth |
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