CN101320215A - Photo-etching mark on semiconductor material and its production method - Google Patents
Photo-etching mark on semiconductor material and its production method Download PDFInfo
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- CN101320215A CN101320215A CNA2008100242895A CN200810024289A CN101320215A CN 101320215 A CN101320215 A CN 101320215A CN A2008100242895 A CNA2008100242895 A CN A2008100242895A CN 200810024289 A CN200810024289 A CN 200810024289A CN 101320215 A CN101320215 A CN 101320215A
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Abstract
The invention discloses a photo-etching mark on semi-conductor materials, which is provided with a steep groove. The surface of the photo-etching mark is provided with a layer of 50-300nm-thickness refractory metallic membrane. The invention also discloses three making methods of the photo-etching mark on the semi-conductor materials. The problem that the photo-etching mark can not be recognized because of the low reflectivity of the semi-conductor materials or the photo-etching accuracy is reduced because of the low resolution of the photo-etching mark is solved. The surface appearance of the photo-etching mark can remain good after being treated by the high-temperature process; the accuracy of the photo-etching mark technology of the semi-conductor devices which adopt the high-temperature process is guaranteed.
Description
Technical field
The present invention relates to a kind of semiconductor devices and manufacturing process thereof, relate in particular to photo-etching mark on a kind of semiconductor material and preparation method thereof.
Background technology
In semiconductor device technology, photoetching process is a very important processing step, directly has influence on the performance and the yield rate of semiconductor devices and assembly.In order to realize the accurate alignment between each layer of semiconductor devices, usually photo-etching mark is produced on semiconductor material surface; Etching system at first finds the photo-etching mark position, the location that utilizes the coordinate of photo-etching mark to finish every layer of device then.Therefore, photo-etching mark must be able to clearly be discerned by etching system, could guarantee the precision of photoetching.The step-by-step movement photoetching is to come work by the reflected light of surveying and analyze the photo-etching mark figure as the main flow photoetching technique in the modern semiconductors disk manufacturing process.In order to improve the catoptrical contrast of photo-etching mark, require the photo-etching mark figure to have steep clearly step, for example form as shown in Figure 1 groove figure in the semiconductor material surface etching, it comprise cross mark and etc. the grating marker of pitch.This photo-etching mark is very effective for silicon and GaAs material, because between in the operating wavelength range of step-by-step movement litho machine light source, silicon and gallium arsenide have sufficiently high reflectivity, makes litho machine accurately to locate photo-etching mark.
Semiconductor material with wide forbidden band silit (SiC) and gallium nitride (GaN) have characteristics such as broad stopband width, high critical field strength, high heat conductance, high carrier saturation rate.GaN on SiC on the SiC substrate, GaN, AlGaN extension and the Sapphire Substrate, AlGaN extension are to make the most important semiconductor materials of device such as high temperature, high frequency, high-power, radioresistance device and ultraviolet detector, short-wave LED, have superpower performance and wide application prospect.But in the operating wavelength range of step-by-step movement litho machine light source, SiC, GaN, AlGaN semiconductor material have higher transparency and lower surface reflectivity, the intensity of reflected light of material surface a little less than, usually can not be by the photo-etching mark of material surface etching graphic making by the litho machine accurate in locating, even can not discern fully.In addition, make semiconductor devices such as SiC and GaN and generally will adopt high-temperature technology, for example make the short annealing of Ohmic contact, technological temperature is up to 900 ℃-1000 ℃.The metal surface as a rule has very high reflectivity, and the reflected light of some metallic pattern also has higher contrast ratio, can be used for making photo-etching mark.But; the granulating phenomenon can take place through a lot of metallic films behind the high-temperature technology; surfaceness significantly strengthens, and makes this metal lithographic mark no longer can clearly be discerned by litho machine, causes the follow-up photoetching process precision of high-temperature technology to reduce even can't carry out.
Summary of the invention
The photo-etching mark that technical matters to be solved by this invention provides on a kind of semiconductor material can not be by the problem of the accurate location of litho machine with the photo-etching mark that solves on the antiradar reflectivity semiconductor material.
Another technical matters to be solved by this invention provides the method for making of the photo-etching mark on the above-mentioned semiconductor material.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is as follows:
Photo-etching mark on a kind of semiconductor material has steep groove, and there is the thick refractory metal film of one deck 50～300nm on the photo-etching mark surface.
Wherein, described refractory metal material is tungsten or tungsten nitrogen.
Photo-etching mark on the semiconductor material of the present invention not only is applicable to the antiradar reflectivity semiconductor material, and also can play good identification positioning action to the high reflectivity semiconductor material.Wherein, described antiradar reflectivity semiconductor material is a silicon carbide wafer, or the epitaxial wafer of grown on the silicon carbide substrates one deck or multilayer carborundum films, or the one deck or the multilayer epitaxial sheet of grown on the silicon carbide substrates gallium nitride film or AlGaN film or aluminium nitride film, or the one deck or the multilayer epitaxial sheet of grown on the Sapphire Substrate gallium nitride film or AlGaN film or aluminium nitride film.Described high reflectivity semiconductor material is silicon or gallium arsenide.
The photoetching technique that photo-etching mark on the semiconductor material of the present invention is suitable for is that step-by-step movement photoetching process, electron beam direct are inscribed or the contact photolithography method.
Prepare the method for the photo-etching mark on the above-mentioned semiconductor material, comprise the steps:
1, utilize the ground floor photo-conductive film to form the photo-etching mark figure at semiconductor material surface;
2, utilizing the ground floor photo-conductive film to make mask carries out dry etching to semiconductor material surface and forms steep groove;
3, remove the ground floor photo-conductive film of semiconductor material surface;
4, second layer photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive second layer photo-conductive films of blank window, and make photo-etching mark be positioned at window area central authorities;
5, deposit one deck refractory metal on 2 blank windows and second layer photo-conductive film;
6, remove window area refractory metal in addition by removing second layer photo-conductive film, in window area, stay by the plated groove figure of infusibility.
Wherein, the thickness of ground floor photo-conductive film is 1～2 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
In the step 2, the method for etching is reactive ion etching or inductive couple plasma etching; The degree of depth that etching forms groove is 100～150nm.
In the step 4, the area of window is 1～4mm
2
In the step 5, described refractory metal material is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; The thickness of refractory metal is 100～150nm.
Prepare the other method of the photo-etching mark on the above-mentioned semiconductor material, comprise the steps:
1, the ground floor photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive ground floor photo-conductive films of blank window in photo-etching mark zone to be carved;
2, at 2 blank windows and ground floor photo-conductive film surface deposition one deck refractory metal;
3, remove window area refractory metal in addition by removing the ground floor photo-conductive film;
4, utilize second layer photo-conductive film to form the photo-etching mark figure in refractory metal surfaces;
5, utilizing second layer photo-conductive film to make mask carries out dry etching to refractory metal and forms steep refractory metal groove;
6, remove second layer photo-conductive film.
Wherein, the thickness of ground floor photo-conductive film is 3～4 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
In the step 1, the area of window is 1～4mm
2
In the step 2, described refractory metal material is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; The thickness of refractory metal is 200～300nm.
In the step 5, the lithographic method of refractory metal is ion beam milling, reactive ion etching or inductive couple plasma etching, and the degree of depth that etching forms groove is 100～150nm.
Prepare a method again of the photo-etching mark on the above-mentioned semiconductor material, comprise the steps:
1, the ground floor photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive ground floor photo-conductive films of blank window in photo-etching mark zone to be carved;
2, at 2 blank windows and ground floor photo-conductive film surface deposition ground floor refractory metal;
3, remove window area ground floor refractory metal in addition by removing the ground floor photo-conductive film;
4, utilize second layer photo-conductive film to form the photo-etching mark figure in the ground floor refractory metal surfaces;
5, deposit second layer refractory metal on ground floor refractory metal and second layer photo-conductive film;
6, remove second layer photo-conductive film to remove the second layer refractory metal on the second layer photo-conductive film, ground floor refractory metal and the second layer refractory metal of staying semiconductor material surface form steep groove.
Wherein, the thickness of ground floor photo-conductive film is 2～4 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
Wherein, the ground floor refractory metal is identical with second layer refractory metal material, and material is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; Ground floor insoluble metal thickness is 100～150nm, and second layer insoluble metal thickness is 100～150nm.
In the step 1, the area of window is 1～4mm
2
Beneficial effect: the photo-etching mark on the semiconductor material of the present invention is covered by one deck refractory metal, this refractory metal has higher reflectivity in the operating wavelength range of etching system light source, preferably resolve because the problem that the too low photo-etching mark that causes of surface reflectivity can not be discerned by the step-by-step movement litho machine.Adopted refractory metal as the material of making the photo-etching mark figure in addition, do not degenerating through the surface topography of photo-etching mark after 1000 ℃ even the higher Temperature Treatment, thereby guaranteeing that photoetching process all has very high precision before and after the high-temperature technology of device.The method for making of the photo-etching mark on the semiconductor material of the present invention, technology is simple, is easy to realize.
Description of drawings
The vertical view of the photo-etching mark figure that Fig. 1 is adopted for a kind of step-by-step movement litho machine.
Fig. 2 is that the A of Fig. 1 is to sectional view.
Fig. 3 is in the prior art, the partial section of the conventional photo-etching mark on the higher semiconductor material of silicon and gallium arsenide isoreflectance, and steep groove figure forms by the etching semiconductor material among the figure.
Fig. 4 is the synoptic diagram of photo-etching mark window on the semiconductor material disk, and the photo-etching mark figure lays respectively at the central authorities of two windows.
Fig. 5 A-5C is the photo-etching mark manufacture method process synoptic diagram of embodiments of the invention one.
Fig. 6 A-6D is the photo-etching mark manufacture method process synoptic diagram of embodiments of the invention two.
Fig. 7 A-7D is the photo-etching mark manufacture method process synoptic diagram of embodiments of the invention three.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.Embodiment is the unrestricted the present invention of explanation.Any those of ordinary skill can be understood these embodiments and not limit the present invention in any way in this area, can make suitable modification and without prejudice to essence of the present invention with depart from scope of the present invention.
Embodiment 1:
Shown in Fig. 5 A, utilize ground floor photo-conductive film 3 to form the photo-etching mark figure on semiconductor material (silicon carbide wafer) 1 surface, the thickness of ground floor photo-conductive film 3 is 2 μ m.
Shown in Fig. 5 B, utilize ground floor photo-conductive film 3 to make mask dry etching is carried out on semiconductor material 1 surface, form steep groove 6; The method of dry etching semiconductor material is inductive couple plasma (ICP) etching, and groove 6 degree of depth that etching forms are 100nm.The ground floor photo-conductive film 3 on semiconductor material 1 surface behind the removing dry etching.
Second layer photo-conductive film 5 is attached to whole semiconductor material surface, only reserves 2 non-cohesive second layer photo-conductive films of blank window, and make photo-etching mark be positioned at window area central authorities; The thickness of second layer photo-conductive film 5 is 4 μ m; The area of window 4 is 2mm
2
Shown in Fig. 5 C, deposit one deck refractory metal 2 on 2 blank windows and second layer photo-conductive film 5; Refractory metal 2 is a tungsten, and thickness is 100nm.Remove window 4 zone refractory metals in addition by removing second layer photo-conductive film 5, in window area, stay by the plated shallow slot 7 of infusibility.The vertical view of metal shallow slot 7 figures as shown in Figure 1.
Embodiment 2:
As shown in Figure 4, at first ground floor photo-conductive film 5 is attached to whole semiconductor material (one deck gallium nitride film of having grown on the silicon carbide substrates) 1 surface, only reserves 2 blank window 4 non-cohesive ground floor photo-conductive films 5 in photo-etching mark zone to be carved; The thickness of ground floor photo-conductive film 5 is 4 μ m.Photo-etching mark is positioned at window 4 zone central authorities, and the area of window 4 is 4mm
2
As shown in Figure 6A, at 2 blank windows and ground floor photo-conductive film 5 surface deposition one deck refractory metals 8, refractory metal 8 is a tungsten nitrogen, and thickness is 200nm.Remove window 4 zone refractory metals 8 in addition by removing ground floor photo-conductive film 5;
Shown in Fig. 6 B, utilize second layer photo-conductive film 14 to form the photo-etching mark figure on refractory metal 8 surfaces; The thickness of second layer photo-conductive film 14 is 3 μ m.
Shown in Fig. 6 C, utilize photo-conductive film 14 to make mask refractory metal 8 is carried out dry etching formation metal valley 9; The lithographic method of refractory metal is an ion beam milling, and groove 9 degree of depth that etching forms are 100nm.
Shown in Fig. 6 D, second layer photo-conductive film 14 behind the removing dry etching stays metal valley 9 in window 4 zones.The vertical view of metal valley 9 as shown in Figure 1.
Embodiment 3:
As shown in Figure 4, ground floor photo-conductive film 5 is attached to whole semiconductor material (one deck aluminium nitride film of having grown on the Sapphire Substrate) 1 surface, only reserves 2 blank window 4 non-cohesive ground floor photo-conductive films 5 in photo-etching mark zone to be carved; The thickness of photo-conductive film 5 is 2 μ m.Photo-etching mark is positioned at window 4 zone central authorities, and the area of window 4 is 1mm
2
Shown in Fig. 7 A, at 2 blank windows 4 and ground floor photo-conductive film 5 surface deposition ground floor refractory metals 10; Ground floor refractory metal 10 is a tungsten, and thickness is 150nm.Remove window 4 zone ground floor refractory metals 10 in addition by removing ground floor photo-conductive film 5.
Shown in Fig. 7 B, utilize second layer photo-conductive film 11 to form the photo-etching mark figure on ground floor refractory metal 10 surfaces, the thickness of second layer photo-conductive film 11 is 3 μ m.
Shown in Fig. 7 C, deposit second layer refractory metal 12 on ground floor refractory metal 10 and second layer photo-conductive film 11, refractory metal 12 is a tungsten, thickness is 150nm.
Shown in Fig. 7 D, remove second layer photo-conductive film 11 to remove the second layer refractory metal 12 on the second layer photo-conductive film 11, ground floor refractory metal 10 and the second layer refractory metal 12 of staying semiconductor material 1 surface form steep groove 13.The vertical view of refractory metal groove 13 figures as shown in Figure 1.
Claims (19)
1, the photo-etching mark on a kind of semiconductor material has steep groove, it is characterized in that there is the thick refractory metal film of one deck 50～300nm on the photo-etching mark surface.
2, the photo-etching mark on the semiconductor material according to claim 1 is characterized in that described refractory metal material is tungsten or tungsten nitrogen.
3, the photo-etching mark on the semiconductor material according to claim 1 is characterized in that described semiconductor material is antiradar reflectivity semiconductor material or high reflectivity semiconductor material.
4, the photo-etching mark on the semiconductor material according to claim 3, it is characterized in that described antiradar reflectivity semiconductor material is a silicon carbide wafer, or the epitaxial wafer of grown on the silicon carbide substrates one deck or multilayer carborundum films, or the one deck or the multilayer epitaxial sheet of grown on the silicon carbide substrates gallium nitride film or AlGaN film or aluminium nitride film, or the one deck or the multilayer epitaxial sheet of grown on the Sapphire Substrate gallium nitride film or AlGaN film or aluminium nitride film.
5, the photo-etching mark on the semiconductor material according to claim 3 is characterized in that described high reflectivity semiconductor material is silicon or gallium arsenide.
6, a kind of method for preparing the photo-etching mark on the described semiconductor material of claim 1 is characterized in that this method comprises the steps:
(1) utilize the ground floor photo-conductive film to form the photo-etching mark figure at semiconductor material surface;
(2) utilizing the ground floor photo-conductive film to make mask carries out dry etching to semiconductor material surface and forms steep groove;
(3) the ground floor photo-conductive film of removing semiconductor material surface;
(4) second layer photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive second layer photo-conductive films of blank window, and make photo-etching mark be positioned at window area central authorities;
(5) deposit one deck refractory metal on 2 blank windows and second layer photo-conductive film;
(6) remove window area refractory metal in addition by removing second layer photo-conductive film, in window area, stay by the plated groove figure of infusibility.
7, the method for the photo-etching mark on the semiconductor material according to claim 6, the thickness that it is characterized in that the ground floor photo-conductive film are 1～2 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
8, the method for the photo-etching mark on the semiconductor material according to claim 6 is characterized in that the method for etching in the step (2) is reactive ion etching or inductive couple plasma etching; The degree of depth that etching forms groove is 100～150nm.
9, the method for the photo-etching mark on the semiconductor material according to claim 6 is characterized in that the area of window in the step (4) is 1～4mm
2
10, the method for the photo-etching mark on the semiconductor material according to claim 6 is characterized in that refractory metal material described in the step (5) is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; The thickness of refractory metal is 100～150nm.
11, a kind of method for preparing the photo-etching mark on the described semiconductor material of claim 1 is characterized in that this method comprises the steps:
(1) the ground floor photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive ground floor photo-conductive films of blank window in photo-etching mark zone to be carved;
(2) at 2 blank windows and ground floor photo-conductive film surface deposition one deck refractory metal;
(3) remove window area refractory metal in addition by removing the ground floor photo-conductive film;
(4) utilize second layer photo-conductive film to form the photo-etching mark figure in refractory metal surfaces;
(5) utilizing second layer photo-conductive film to make mask carries out dry etching to refractory metal and forms steep refractory metal groove;
(6) remove second layer photo-conductive film.
12, the method for the photo-etching mark on the semiconductor material according to claim 11, the thickness that it is characterized in that the ground floor photo-conductive film are 3～4 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
13, the method for the photo-etching mark on the semiconductor material according to claim 11 is characterized in that the area of window in the step (1) is 1～4mm
2
14, the method for the photo-etching mark on the semiconductor material according to claim 11 is characterized in that refractory metal material described in the step (2) is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; The thickness of refractory metal is 200～300nm.
15, the method for the photo-etching mark on the semiconductor material according to claim 11, the lithographic method that it is characterized in that refractory metal in the step (5) is ion beam milling, reactive ion etching or inductive couple plasma etching, and the degree of depth that etching forms groove is 100～150nm.
16, a kind of method for preparing the photo-etching mark on the described semiconductor material of claim 1 is characterized in that this method comprises the steps:
(1) the ground floor photo-conductive film is attached to whole semiconductor material surface, only reserves 2 non-cohesive ground floor photo-conductive films of blank window in photo-etching mark zone to be carved;
(2) at 2 blank windows and ground floor photo-conductive film surface deposition ground floor refractory metal;
(3) remove window area ground floor refractory metal in addition by removing the ground floor photo-conductive film;
(4) utilize second layer photo-conductive film to form the photo-etching mark figure in the ground floor refractory metal surfaces;
(5) deposit second layer refractory metal on ground floor refractory metal and second layer photo-conductive film;
(6) remove second layer photo-conductive film to remove the second layer refractory metal on the second layer photo-conductive film, ground floor refractory metal and the second layer refractory metal of staying semiconductor material surface form steep groove.
17, the method for the photo-etching mark on the semiconductor material according to claim 16, the thickness that it is characterized in that the ground floor photo-conductive film are 2～4 μ m; The thickness of second layer photo-conductive film is 2～4 μ m.
18, the method for the photo-etching mark on the semiconductor material according to claim 16 is characterized in that the ground floor refractory metal is identical with second layer refractory metal material, and material is tungsten or tungsten nitrogen; The deposition process of refractory metal is a sputtering method; Ground floor insoluble metal thickness is 100～150nm, and second layer insoluble metal thickness is 100～150nm.
19, the method for the photo-etching mark on the semiconductor material according to claim 16 is characterized in that the area of window in the step (1) is 1～4mm
2
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| CN102800566B (en) * | 2012-07-16 | 2015-01-28 | 中国电子科技集团公司第五十五研究所 | Method for protecting alignment mark through contact area lead wire process in semiconductor device |
| CN103700649A (en) * | 2012-09-28 | 2014-04-02 | 上海华虹宏力半导体制造有限公司 | Photoetching mark applying epitaxial technology and method thereof |
| CN103700649B (en) * | 2012-09-28 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | Photoetching mark applying epitaxial technology and method thereof |
| CN103247549A (en) * | 2013-04-02 | 2013-08-14 | 中国电子科技集团公司第五十五研究所 | Method for monitoring height of step formed by photosensitive mask etched silicon carbide material in real time |
| CN103247549B (en) * | 2013-04-02 | 2015-11-18 | 中国电子科技集团公司第五十五研究所 | A kind of photosensitive mask etching method of carborundum that shoulder height is monitored in real time |
| CN104656384A (en) * | 2015-02-28 | 2015-05-27 | 安庆美晶新材料有限公司 | Method for manufacturing substrate material with auxiliary positioning mark |
| CN106842825A (en) * | 2017-03-21 | 2017-06-13 | 京东方科技集团股份有限公司 | Master mold and its manufacture method |
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