CN116249415B - Preparation method of pixel electrode structure of organic light-emitting display - Google Patents
Preparation method of pixel electrode structure of organic light-emitting display Download PDFInfo
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Abstract
The invention discloses a preparation method of a pixel electrode structure of an organic light-emitting display, which comprises the following steps: step 1, forming a reflective metal layer and a third transparent microcavity layer on a substrate of an OLED driving circuit, wherein the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the three pixel areas correspond to pixels with different colors; the substrate is provided with a monitoring area outside the pixel area, wherein the monitoring area comprises a first etching monitoring area and a second etching monitoring area; step 2, forming independent pixel electrodes in the first pixel area, the second pixel area and the third pixel area by photoetching and etching methods; and 3, etching the pixel area and the corresponding monitoring area by adopting different etching rates in a graphical mode. According to the invention, each pixel area has different microcavity structures, so that the independent adjustment of the colors of the sub-pixels through microcavities is realized, and the display brightness of the silicon-based organic light-emitting display is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a pixel electrode structure of an organic light-emitting display.
Background
There are two general schemes for colorizing Organic Light Emitting Diode (OLED) display devices, one is direct colorization of sub-pixels, and the other is color realization by means of white light plus a color filter. In the field of micro-display, direct colorization of sub-pixels is generally realized by adopting different transparent microcavity thicknesses. When the microcavity electrode is prepared, an independent sputtering mode of RGB transparent microcavity layers is generally adopted, and the method controls the thickness of microcavity layers by controlling sputtering time, so that the thickness control is accurate, but the steps are complicated, and the cost is high. If the preparation of different microcavity layers is realized by adopting an etching method, the thickness deviation is easily increased due to unstable etching rate, and the etching thickness needs to be accurately controlled.
Disclosure of Invention
The technical purpose is that: aiming at the problems in the prior art, the invention provides a preparation method of an organic light-emitting display pixel electrode structure, which aims to solve the problems of large thickness deviation and difficult accurate control caused by unstable etching rate.
The technical scheme is as follows: a preparation method of a pixel electrode structure of an organic light-emitting display comprises the following steps:
step 1, forming a reflective metal layer and a third transparent microcavity layer on a substrate of an OLED driving circuit, wherein the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the three pixel areas correspond to pixels with different colors; the substrate is provided with a monitoring area outside the pixel area, the monitoring area comprises a first etching monitoring area and a second etching monitoring area, the first etching monitoring area and the second etching monitoring area are planar areas, and the thickness of the substrate is monitored by an ellipsometer and a film thickness meter;
step 2, forming independent pixel electrodes in the first pixel area, the second pixel area and the third pixel area by photoetching and etching methods, and reserving a reflective metal layer and a transparent microcavity layer on the first etching monitoring area and the second etching monitoring area;
and step 3, etching the pixel area and the corresponding monitoring area by adopting different etching rates in a graphical mode, wherein the method specifically comprises the following steps of:
step 31a, protecting the first and third pixel areas and the second etching monitoring area by adopting photoresist or SiNx (silicon nitride) hard mask and SiOx (silicon oxide) hard mask in a graphical mode, and opening the second pixel area and the photoresist or mask on the first etching monitoring area;
step 32a, etching the transparent microcavity layer of the second pixel region by adopting a high etching rate program, taking out the whole substrate to test the thickness of the transparent microcavity layer on the first etching monitoring region after the high etching rate is set for a time, and continuing to etch for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the second pixel region if the thickness is not up to the set thickness due to the influence of process fluctuation;
step 33a, etching the transparent microcavity layer by using a low etching rate program, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the first etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time by adopting the low etching rate until the target thickness of the second pixel area is reached, obtaining a second transparent microcavity layer which achieves the target thickness, and removing photoresist or a mask;
step 34a, protecting the second and third pixel areas and the first etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, and opening the photoresist or mask on the first pixel area and the second etching monitoring area;
step 35a, etching the transparent microcavity layer in the first pixel region by using a high etching rate program, taking out and testing the thickness of the transparent microcavity layer in the second etching monitoring region after the high etching rate is set for a time, and continuing etching for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the first pixel region if the thickness does not reach the set thickness; the first pixel region target thickness is different from the second pixel region target thickness;
step 36a, etching the transparent microcavity layer by using a low etching rate program, after the low etching rate is set for a time, taking out and testing the thickness of the transparent microcavity layer on the second etching monitoring area, and continuing etching for a period of time by adopting the low etching rate until the thickness of the transparent microcavity layer reaches the target thickness of the first pixel area if the thickness of the transparent microcavity layer does not reach the target thickness; obtaining a first transparent microcavity layer realizing target thickness, and removing photoresist or a mask to obtain a target electrode; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
Further, the step 3 adopts the following steps:
step 31b, protecting the second and third pixel areas and the first etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, and opening the photoresist or mask on the first pixel area and the second etching monitoring area;
step 32b, etching the transparent microcavity layer in the first pixel region by adopting a high etching rate program, taking out the whole substrate to test the thickness of the transparent microcavity layer in the second etching monitoring region after the high etching rate is set for a time, and continuing etching for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the first pixel region if the thickness does not reach the set thickness due to the influence of process fluctuation;
step 33b, etching the transparent microcavity layer by using a low etching rate program, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the second etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time by adopting the low etching rate until the target thickness of the first pixel area is reached, obtaining a first transparent microcavity layer which achieves the target thickness, and removing photoresist or a mask;
step 34b, protecting the first, third pixel areas and the second etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, opening the second pixel area, and opening the photoresist or mask on the first etching monitoring area;
step 35b, etching the transparent microcavity layer in the first etching monitoring area by using a high etching rate program, taking out and testing the thickness of the transparent microcavity layer in the first etching monitoring area after the high etching rate is set for a time, and continuing etching for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the second pixel area if the thickness does not reach the set thickness; the second pixel region target thickness is different from the first pixel region target thickness;
step 36b, etching the transparent microcavity layer by using a low etching rate program, after the low etching rate is set for a time, taking out and testing the thickness of the transparent microcavity layer on the first etching monitoring area, and continuing etching for a period of time by adopting the low etching rate until the thickness of the transparent microcavity layer reaches the target thickness of the second pixel area if the thickness of the transparent microcavity layer does not reach the target thickness; obtaining a second transparent microcavity layer realizing target thickness, and removing photoresist or a mask to obtain a target electrode; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
Further, the step 2 specifically comprises:
step 21, forming an electrode pattern in the pixel region by using a photoresist through a photolithography process or by using a SiNx hard mask or a SiOx hard mask through a photolithography and etching process;
in step 22, independent pixel electrodes are formed in the first pixel region, the second pixel region and the third pixel region by using a dry etching method.
Further, the patterning mode is one of deposition, photoetching and etching.
Further, the material of the reflective metal layer is one of Al, ag, pt, pd, ti metals.
Further, the transparent microcavity layer is made of metal oxide material, and is one or more of ITO (indium tin oxide), IGZO (indium gallium zinc oxide) and ZnO (zinc oxide), and has conductivity and high transmittance in the visible light range;
further, the etching rate of the high etching rate program to the micro-cavity layer is 1-5nm/s, and the etching rate of the low etching rate program to the micro-cavity layer is 1-3A/s.
Further, the etching method is dry etching, and the adopted etching gas is Ar or Cl 2 、O 2 、N 2 、CHF 3 、BCl 3 、SF 4 One of them or a mixture of them.
Further, the third transparent microcavity layer is thicker than the first transparent microcavity layer and the second transparent microcavity layer.
Further, the third microcavity layer has a thickness of between 100nm and 400 nm.
The beneficial effects are that: according to the preparation method of the pixel electrode structure of the organic light-emitting display, each pixel area can be provided with different microcavity structures, so that the OLED device sub-pixels are provided with different microcavity lengths, the colors of the sub-pixels are independently regulated through the microcavities, the display screen sub-pixels directly generate light with the corresponding colors, and the display brightness of the silicon-based organic light-emitting display is improved; the reflective metal layer has good reflectivity and conductivity, and the transparent microcavity layer has the characteristics of good conductivity, high transmittance in the visible light range, capability of matching the work function with an OLED device and the like; the thickness of the transparent microcavity layer in the etching monitoring area is monitored, and the etching procedure is regulated, so that the accurate regulation and control of the etching thickness is realized; the pixel area is a punctiform area, the etching monitoring area is a plane area, and the thickness is easy to monitor; the invention has low process difficulty and can improve the yield and the economical efficiency of mass production.
Drawings
FIG. 1 is a schematic diagram of a first embodiment of a method for fabricating a pixel electrode structure having a driving circuit substrate and a lead structure;
FIG. 2 is a schematic diagram of a first embodiment of a method for fabricating a pixel electrode structure, in which a reflective metal layer and a third transparent microcavity layer are formed on a substrate;
FIG. 3 is a schematic diagram of patterning an electrode pattern using a photolithography process in a first embodiment of a method for fabricating a pixel electrode structure;
FIG. 4 is a schematic diagram of a pixel region forming independent electrode structure in a first embodiment of a method for fabricating a pixel electrode structure;
FIG. 5 is a schematic diagram showing a structure in which a photoresist covers a first pixel region, a third pixel region and a second etching monitor region in a first embodiment of a method for fabricating a pixel electrode structure, and the second pixel region and the first etching monitor region are opened;
FIG. 6 is a schematic diagram of a transparent microcavity layer structure of a first embodiment of a method for fabricating a pixel electrode structure by etching a second pixel region and a first etching monitor region using a high etching rate process;
FIG. 7 is a schematic diagram of a transparent microcavity layer structure of a first embodiment of a method for fabricating a pixel electrode structure by etching a second pixel region and a first etching monitor region using a low etching rate process;
FIG. 8 is a schematic diagram of a photoresist removing structure for achieving a target thickness of a transparent microcavity layer in a first embodiment of a manufacturing method of a pixel electrode structure;
FIG. 9 is a schematic diagram showing a structure in which a photoresist covers a second pixel region, a third pixel region and a first etching monitor region in a first embodiment of a method for fabricating a pixel electrode structure, and the first pixel region and the second etching monitor region are opened;
FIG. 10 is a schematic diagram of a transparent microcavity layer structure of a first embodiment of a method for fabricating a pixel electrode structure by etching a first pixel region and a second etching monitor region using a high etching rate program;
FIG. 11 is a schematic diagram of a transparent microcavity layer structure of a first embodiment of a method for fabricating a pixel electrode structure by etching a first pixel region and a second etching monitor region using a high etching rate program;
FIG. 12 is a schematic diagram of a first embodiment of a method for fabricating a pixel electrode structure by removing photoresist to obtain a target electrode;
FIG. 13 is a schematic diagram of a second embodiment of a method for fabricating a pixel electrode structure with a driving circuit substrate and a lead structure;
FIG. 14 is a schematic diagram showing a structure of a reflective metal layer and a third transparent microcavity layer formed on a substrate according to a second embodiment of a manufacturing method of a pixel electrode structure;
FIG. 15 is a schematic diagram of patterning an electrode pattern using a photolithography process in a second embodiment of a method for fabricating a pixel electrode structure;
FIG. 16 is a schematic diagram showing the formation of independent electrodes in a pixel region in a second embodiment of a method for fabricating a pixel electrode structure;
FIG. 17 is a schematic diagram illustrating a structure of a pixel electrode structure in which a photoresist covers a second pixel region, a third pixel region and a first etching monitor region in a second embodiment of a method for fabricating the pixel electrode structure, and the first pixel region and the second etching monitor region are opened;
FIG. 18 is a schematic diagram of a transparent microcavity layer structure of a first pixel region and a second etching monitor region etched using a high etching rate procedure in a second embodiment of a method for fabricating a pixel electrode structure;
FIG. 19 is a schematic view of a transparent microcavity layer structure of a second embodiment of a method for fabricating a pixel electrode structure by etching a first pixel region and a second etching monitor region using a low etching rate process;
FIG. 20 is a schematic diagram of a photoresist removing structure for achieving a target thickness of a transparent microcavity layer in a second embodiment of a manufacturing method of a pixel electrode structure;
FIG. 21 is a schematic diagram showing a structure in which a photoresist covers a first pixel region, a third pixel region and a second etching monitor region in a second embodiment of a method for fabricating a pixel electrode structure, and the second pixel region and the first etching monitor region are opened;
FIG. 22 is a schematic diagram of a transparent microcavity layer structure of a pixel electrode structure in a second embodiment of a method for fabricating the same using a high etching rate process to etch a second pixel region and a first etching monitor region;
FIG. 23 is a schematic diagram of a transparent microcavity layer structure of a pixel electrode structure in a second embodiment of a method for fabricating the same by etching a second pixel region and a first etching monitor region using a high etching rate process;
fig. 24 is a schematic structural diagram of a target electrode obtained by removing photoresist in a second embodiment of a method for manufacturing a pixel electrode structure.
Description of the embodiments
The invention is further described below with reference to the accompanying drawings:
fig. 1 to 12 are schematic structural views corresponding to each step in a first embodiment of a method for fabricating a pixel electrode structure of an organic light emitting display according to the present invention.
As shown in fig. 1, in a first embodiment of the method for forming a pixel electrode structure of the present invention, a substrate 100 of a driving circuit is provided, a lead structure 110 of the driving circuit is provided, the lead structure 110 of the driving circuit is responsible for conducting a driving voltage to an anode of a pixel electrode, the substrate of the driving circuit is provided with a plurality of pixel areas and etching monitoring areas, in this embodiment, referring to red, green and blue sub-pixels of a conventional display device, the substrate is provided with a first pixel area, a second pixel area and a third pixel area, the first etching monitoring area and the second etching monitoring area are located outside the pixel area of the substrate, and the first etching monitoring area and the second etching monitoring area can be connected or separately arranged. If the sub-pixel arrangement modes such as RGBB and RGBW are adopted, including four pixel regions, the pixel structure can be formed with reference to the present embodiment.
As shown in fig. 2, a reflective metal layer 200 and a third transparent microcavity layer 210 are prepared on the substrate 100, and the thickness of the film layers in the pixel region and the monitoring region is consistent, the first etching monitoring region monitors the thickness of the film layer in the second pixel region, and the second etching monitoring region monitors the thickness of the film layer in the first pixel region. The reflective metal layer has good reflectivity and conductivity, the transparent microcavity layer has the characteristics of good conductivity, high transmittance in the visible light range, work function matching with OLED devices and the like, wherein the reflective metal layer can be made of Al, ag, pt, pd, ti and other metals. The material of the transparent microcavity layer may be one or more of ITO, IZO, znO and the third transparent microcavity layer is between 100 and 400 nm.
As shown in fig. 3, an electrode pattern is formed in a pixel region by a photolithography process using a photoresist or by a photolithography and etching process using a SiNx hard mask or SiOx hard mask 300.
As shown in fig. 4, the etching and photoresist removal are performed by a dry etching method, and independent pixel electrodes are formed in the first pixel region, the second pixel region and the third pixel region, so that the film layer of the etching monitoring region is unchanged.
As shown in fig. 5, the first pixel region, the third pixel region, and the second etch monitor region are protected using a hard mask 301 such as photoresist, siNx hard mask, or SiOx, and the second pixel region and the first etch monitor region are opened.
As shown in fig. 6, the transparent microcavity layer is etched by using a high etching rate program, after the high etching rate is set for a time, the thickness of the transparent microcavity layer 211 on the first etching monitoring area is taken out and measured, if the thickness does not reach the set thickness due to the influence of process fluctuation, the etching can be continued for a period of time by using the high etching rate until the thickness reaches 101% -120% of the target thickness, the thickness of the transparent microcavity layer 212 in the second pixel area is the same as the thickness of the transparent microcavity layer 211 in the etching monitoring area, and the etching rate of the microcavity layer by using the high etching rate program is 1-5nm/s.
As shown in fig. 7, when the target thickness is 101% -120%, the transparent microcavity layer is etched by using a low etching rate program, after the low etching rate is set for a time, the thickness of the transparent microcavity layer 213 on the first etching monitoring area is taken out and tested until the target thickness is reached, the thickness of the transparent microcavity layer 214 in the second pixel area is the same as the thickness of the transparent microcavity layer 213 in the etching monitoring area, and the etching rate of the microcavity layer by using the low etching rate program is 1-3A/s, wherein 10A is equal to 1nm. For example, it is necessary to etch 200nm of ITO to 100nm, first etch it for 25 seconds with a high etch rate of 3.5nm/s, then test the ITO thickness to 112.5nm, which is 112.5% of the target thickness of 100nm, then etch it for 50 seconds with a low etch rate of 0.25nm/s, and then test the ITO thickness to 100nm, thus completing the target.
The setting basis of the high etching rate setting time and the low etching rate setting time of each pixel area is as follows:
high etch rate x total etch rate etch time + low etch rate x total low etch rate etch time = thickness to be etched;
total etching rate etching time = high etching rate set time + high etching rate continued etching time;
total low etch rate etch time = low etch rate set time + low etch rate continue etch time.
As shown in fig. 8, the photoresist or mask on the first pixel region, the third pixel region and the second etching monitor region is removed, and at this time, the microcavity layer of the second pixel region has reached the target thickness.
As shown in fig. 9, the second pixel region, the third pixel region, and the first etch monitor region are protected using a photoresist, a SiNx hard mask, or a SiOx hard mask 302, and the first pixel region and the second etch monitor region are opened.
As shown in fig. 10, the transparent microcavity layer is etched by using a high etching rate program, after the high etching rate is set for a time, the transparent microcavity layer 215 on the second etching monitoring area is taken out and measured, if the set thickness is not reached, the etching can be continued for a period of time by using the high etching rate until the thickness reaches 101% -120% of the target thickness, the thickness of the transparent microcavity layer 216 in the first pixel area is the same as the thickness of the transparent microcavity layer 215 in the second etching monitoring area, and the etching rate of the microcavity layer by using the high etching rate program is 1-5nm/s.
As shown in fig. 11, when the target thickness is 101% -120%, the transparent microcavity layer is etched by using a low etching rate program, after the low etching rate is set for a time, the thickness of the transparent microcavity layer 217 on the second etching monitoring area is taken out and tested until the target thickness is reached, the thickness of the transparent microcavity layer 218 in the first pixel area is the same as the thickness of the transparent microcavity layer 217 in the second etching monitoring area, and the etching rate of the microcavity layer by using the low etching rate program is 1-3A/s.
As shown in fig. 12, the photoresist or the mask on the second pixel region, the third pixel region and the first etching monitoring region is removed, so as to obtain electrodes with different microcavity layer thicknesses.
Fig. 13 to 24 are schematic structural views corresponding to each step in a second embodiment of a method for fabricating a pixel electrode structure of an organic light emitting display according to the present invention.
As shown in fig. 13, in a second embodiment of the method for forming a pixel electrode structure of the present invention, a substrate 100 of a driving circuit is provided, a lead structure 110 of the driving circuit is provided, the lead structure 110 of the driving circuit is responsible for conducting a driving voltage to an anode of a pixel electrode, the substrate of the driving circuit may be provided with a plurality of pixel areas and etching monitor areas, in this embodiment, referring to red, green and blue sub-pixels of a conventional display device, the substrate is provided with a first, a second and a third pixel areas, and the first etching monitor area and the second etching monitor area are located outside the pixel area of the substrate. If the sub-pixel arrangement modes such as RGBB and RGBW are adopted, including four pixel regions, the pixel structure can be formed with reference to the present embodiment.
As shown in fig. 14, a reflective metal layer 201 and a third transparent microcavity layer 220 are prepared on the substrate 100, and the thickness of the film layers in the pixel region and the monitoring region is consistent, the first etching monitoring region monitors the thickness of the film layer in the second pixel region, and the second etching monitoring region monitors the thickness of the film layer in the first pixel region. The reflective metal layer has good reflectivity and conductivity. The transparent microcavity layer has the characteristics of good conductivity, high transmittance in the visible light range, work function matching with an OLED device and the like, wherein the material of the reflective metal layer can be Al, ag, pt, pd, ti and other metals. The material of the transparent microcavity layer may be one or more of ITO, IZO, znO and the third transparent microcavity layer is between 100 and 400 nm.
As shown in fig. 15, an electrode pattern is formed in a pixel region by a photolithography process using a photoresist or by a photolithography and etching process using a SiNx hard mask or SiOx hard mask 310 or the like;
as shown in fig. 16, the etching and photoresist removal method is adopted, and independent pixel electrodes are formed in the first pixel region, the second pixel region and the third pixel region, so that the film layer of the etching monitoring region is unchanged.
As shown in fig. 17, the second pixel region, the third pixel region, and the first etch monitor region are protected using a photoresist, a SiNx hard mask, or a SiOx hard mask 311, and the first pixel region and the second etch monitor region are opened.
As shown in fig. 18, the transparent microcavity layer is etched by using a high etching rate program, after the high etching rate is set for a time, taking out and measuring the thickness of the transparent microcavity layer 221 on the second etching monitoring area, if the set thickness is not reached, continuing etching for a period of time by using the high etching rate until the thickness reaches 101% -120% of the target thickness, wherein the thickness of the transparent microcavity layer 222 in the first pixel area is the same as the thickness of the transparent microcavity layer 221 in the etching monitoring area, and the etching rate of the microcavity layer by using the high etching rate program is 1-5nm/s.
As shown in fig. 19, when the target thickness is 101% -120%, the transparent microcavity layer is etched by using a low etching rate program, after the low etching rate is set for a time, the thickness of the transparent microcavity layer 223 on the second etching monitoring area is taken out and tested, if the target thickness is not reached, the etching can be continued for a period of time by using the low etching rate until the target thickness is reached, and the thickness of the transparent microcavity layer 224 in the first pixel area is the same as the thickness of the transparent microcavity layer 223 in the etching monitoring area, wherein the etching rate of the microcavity layer by using the low etching rate program is 1-3A/s.
As shown in fig. 20, the photoresist or mask on the second pixel region, the third pixel region and the first etching monitor region is removed, and at this time, the microcavity layer of the first pixel region has reached the target thickness.
As shown in fig. 21, the first pixel region, the third pixel region, and the second etch monitor region are protected using a photoresist, a SiNx hard mask, or a SiOx hard mask 312, and the second pixel region and the first etch monitor region are opened.
As shown in fig. 22, the transparent microcavity layer is etched by using a high etching rate program, after the high etching rate is set for a time, the thickness of the transparent microcavity layer 225 on the first etching monitoring area is taken out and measured until the thickness reaches 101% -120% of the target thickness, the thickness of the transparent microcavity layer 226 in the second pixel area is the same as the thickness of the transparent microcavity layer 225 in the first etching monitoring area, and the etching rate of the microcavity layer by using the high etching rate program is 1-5nm/s.
As shown in fig. 23, when the target thickness is 101% -120%, the transparent microcavity layer is etched by using a low etching rate program, after the low etching rate is set for a set time, the thickness of the transparent microcavity layer 227 on the first etching monitoring area is taken out and tested until the target thickness is reached, the thickness of the transparent microcavity layer 228 on the second pixel area is the same as the thickness of the transparent microcavity layer 227 on the first etching monitoring area, and the etching rate of the microcavity layer by using the low etching rate program is 1-3A/s.
As shown in fig. 24, the photoresist or the mask on the first pixel region, the third pixel region and the second etching monitoring region is removed, so as to obtain electrodes with different microcavity layer thicknesses.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The preparation method of the pixel electrode structure of the organic light-emitting display is characterized by comprising the following steps:
step 1, forming a reflective metal layer and a third transparent microcavity layer on a substrate of an OLED driving circuit, wherein the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the three pixel areas correspond to pixels with different colors; the substrate is provided with a monitoring area outside the pixel area, the monitoring area comprises a first etching monitoring area and a second etching monitoring area, the first etching monitoring area and the second etching monitoring area are planar areas, and the thickness of the film layers of the pixel area is consistent with that of the film layers of the monitoring area;
step 2, forming independent pixel electrodes in the first pixel area, the second pixel area and the third pixel area by photoetching and etching methods;
and step 3, etching the pixel area and the corresponding monitoring area by adopting different etching rates in a graphical mode, wherein the method specifically comprises the following steps of:
step 31a, protecting the first, third pixel areas and the second etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, opening the second pixel area, and opening the photoresist, siNx hard mask or SiOx hard mask on the first etching monitoring area;
step 32a, etching the transparent microcavity layer of the second pixel region by adopting a high etching rate, taking out the whole substrate to test the thickness of the transparent microcavity layer on the first etching monitoring region after the high etching rate is set for a period of time, and continuing etching for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the second pixel region, wherein the thickness of the transparent microcavity layer of the second pixel region is the same as that of the transparent microcavity layer of the first etching monitoring region;
step 33a, etching the transparent microcavity layer with a low etching rate, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the first etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time with the low etching rate until the thickness of the transparent microcavity layer in the second pixel area is the same as the thickness of the transparent microcavity layer in the first etching monitoring area, obtaining a second transparent microcavity layer with the target thickness, and removing photoresist or mask;
step 34a, protecting the second and third pixel areas and the first etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, and opening the photoresist, siNx hard mask or SiOx hard mask on the first pixel area and the second etching monitoring area;
step 35a, etching the transparent microcavity layer in the first pixel region by using a high etching rate, taking out and testing the thickness of the transparent microcavity layer in the second etching monitoring region after the high etching rate is set for a time, and continuing etching for a period of time by using the high etching rate until the thickness reaches 101% -120% of the target thickness of the first pixel region, wherein the thickness of the transparent microcavity layer in the first pixel region is the same as that of the transparent microcavity layer in the second etching monitoring region; the first pixel region target thickness is different from the second pixel region target thickness;
step 36a, etching the transparent microcavity layer by using a low etching rate, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the second etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time by using the low etching rate until the target thickness of the first pixel area is reached, wherein the thickness of the transparent microcavity layer of the first pixel area is the same as the thickness of the transparent microcavity layer of the second etching monitoring area; obtaining a first transparent microcavity layer realizing target thickness, and removing photoresist or a mask to obtain a target electrode; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
2. The method for manufacturing a pixel electrode structure of an organic light emitting display according to claim 1, wherein the step 3 comprises the steps of:
step 31b, protecting the second and third pixel areas and the first etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, and opening the photoresist, siNx hard mask or SiOx hard mask on the first pixel area and the second etching monitoring area;
step 32b, etching the transparent microcavity layer in the first pixel region by adopting a high etching rate, and taking out the whole substrate to test the thickness of the transparent microcavity layer in the second etching monitoring region after the high etching rate is set for a period of time, if the thickness of the transparent microcavity layer in the second etching monitoring region does not reach the set thickness, continuing etching for a period of time by adopting the high etching rate until the thickness reaches 101% -120% of the target thickness of the first pixel region, wherein the thickness of the transparent microcavity layer in the first pixel region is the same as the thickness of the transparent microcavity layer in the second etching monitoring region;
step 33b, etching the transparent microcavity layer with a low etching rate, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the second etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time with the low etching rate until the thickness of the transparent microcavity layer in the first pixel area is the same as the thickness of the transparent microcavity layer in the second etching monitoring area, obtaining a first transparent microcavity layer with the target thickness, and removing photoresist or a mask;
step 34b, protecting the first, third pixel areas and the second etching monitoring area by adopting photoresist, siNx hard mask or SiOx hard mask in a graphical mode, opening the second pixel area, and opening the photoresist, siNx hard mask or SiOx hard mask on the first etching monitoring area;
step 35b, etching the second pixel region by using a high etching rate, wherein after the first etching monitoring region is used for setting the time of the high etching rate, the transparent microcavity layer on the first etching monitoring region is taken out and tested, if the thickness of the transparent microcavity layer on the first etching monitoring region is not up to the set thickness, the etching is continued for a period of time by using the high etching rate until the thickness of the transparent microcavity layer on the second pixel region reaches 101% -120% of the target thickness of the second pixel region, and the thickness of the transparent microcavity layer on the second pixel region is the same as the thickness of the transparent microcavity layer on the first etching monitoring region; the second pixel region target thickness is different from the first pixel region target thickness;
step 36b, etching the transparent microcavity layer by using a low etching rate, after setting time of the low etching rate, taking out and testing the thickness of the transparent microcavity layer on the first etching monitoring area, if the thickness does not reach the target thickness, continuing etching for a period of time by using the low etching rate until the target thickness of the second pixel area is reached, wherein the thickness of the transparent microcavity layer of the second pixel area is the same as the thickness of the transparent microcavity layer of the first etching monitoring area; obtaining a second transparent microcavity layer realizing target thickness, and removing photoresist or a mask to obtain a target electrode; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
3. The method for manufacturing a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein step 2 specifically comprises:
step 21, forming an electrode pattern in the pixel region by using a photoresist through a photolithography process or by using a SiNx hard mask or a SiOx hard mask through a photolithography and etching process;
in step 22, independent pixel electrodes are formed in the first pixel region, the second pixel region and the third pixel region by using a dry etching method.
4. The method for fabricating a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein the patterning is one of deposition, photolithography, and etching.
5. The method for fabricating a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein the reflective metal layer is made of one of Al, ag, pt, pd, ti metals.
6. The method for fabricating a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein the transparent microcavity layer is made of metal oxide and is one or more of ITO, IGZO, znO.
7. The method for fabricating a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein the high etching rate is 1-5nm/s for the microcavity layer and the low etching rate is 1-3A/s for the microcavity layer.
8. The method for fabricating a pixel electrode structure of an organic light emitting display according to claim 1 or 2, wherein the etching method is dry etching, and the etching gas is Ar or Cl 2 、O 2 、N 2 、CHF 3 、BCl 3 、SF 4 One of them or a mixture of them.
9. The method of claim 1 or 2, wherein the third transparent microcavity layer is thicker than the first and second transparent microcavity layers.
10. The method of claim 1 or 2, wherein the third microcavity layer has a thickness of between 100nm and 400 nm.
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