CN116390577B - Preparation method of pixel microcavity electrode structure of organic light-emitting display - Google Patents
Preparation method of pixel microcavity electrode structure of organic light-emitting display Download PDFInfo
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- CN116390577B CN116390577B CN202310479956.3A CN202310479956A CN116390577B CN 116390577 B CN116390577 B CN 116390577B CN 202310479956 A CN202310479956 A CN 202310479956A CN 116390577 B CN116390577 B CN 116390577B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000001514 detection method Methods 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000000295 emission spectrum Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000007789 gas Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a preparation method of an organic light-emitting display pixel microcavity electrode structure, which comprises the following steps: forming a reflective metal layer in the pixel region and the etching end point detection region; forming a first transparent microcavity layer on a substrate; forming a first etching end point detection layer in the etching end point detection area 1 by using a patterning method; forming a second transparent microcavity layer on the substrate; forming a second etching end point detection layer in the etching end point detection region 2; forming a third transparent microcavity layer on the substrate; the pixel region forms a pixel electrode; etching the third microcavity layer; monitoring the optical emission spectrum in the etching cavity in real time, and stopping etching when the optical emission spectrum is changed when the etching cavity is etched to the second etching end point detection layer; etching the second microcavity layer; and monitoring the optical emission spectrum in the etching cavity in real time, and stopping etching when the optical emission spectrum is etched to the first etching end point detection layer. The invention solves the problems of unstable etching rate and large thickness deviation, and ensures that the sub-pixels have different pixel lengths.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a pixel microcavity electrode structure of an organic light-emitting display.
Background
There are two general schemes for colorizing Organic Light Emitting Diode (OLED) display devices, one is direct colorization of sub-pixels, and the other is color realization by means of white light plus a color filter. In the field of micro-display, direct colorization of sub-pixels is generally realized by adopting different transparent microcavity thicknesses. In the existing scheme for preparing the microcavity electrode, most of methods for respectively sputtering transparent microcavity layers are adopted, the purpose of accurately controlling the thickness of the microcavity layers is achieved by controlling the sputtering time, the process is mature, but the method is complicated in steps and high in cost due to the fact that different microcavity layer thicknesses are required to be distinguished. If the preparation of different microcavity layers is realized by adopting an etching method, the thickness deviation of the microcavity layers is easily increased due to unstable etching rate, so that the spectrum deviation of the device is caused.
Disclosure of Invention
The invention aims to: aiming at the problems in the prior art, the invention provides a preparation method of an organic light-emitting display pixel microcavity electrode structure, which achieves the accurate control of the etching thickness of microcavity electrodes through the design of an etching end layer, realizes that the OLED device subpixels have different microcavity lengths, and enables the display screen subpixels to directly generate light with corresponding colors.
The technical scheme is as follows:
a preparation method of an organic light-emitting display pixel microcavity electrode structure comprises the following steps:
step 1, providing a substrate with an OLED driving circuit, wherein the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the three pixel areas correspond to pixel areas with different colors; the substrate is provided with an etching end point detection area outside the pixel area and comprises an etching end point detection area 1 and an etching end point detection area 2;
step 2, forming a reflective metal layer 200 and a first transparent microcavity layer 210 on a substrate; forming a first etching end point detection layer in the etching end point detection area 1 through a patterning process; forming a second transparent microcavity layer on the substrate; forming a second etching end point detection layer in the etching end point detection area 2 through a patterning process; forming a third transparent microcavity layer on the substrate; forming a patterned first pixel area, a patterned second pixel area and a patterned third pixel area by photoetching, etching and other methods;
step 3, forming a dielectric layer in the third pixel region through a patterning process, and opening the first pixel region, the second pixel region, the etching end point detection region 1 and the etching end point detection region 2; etching the third transparent microcavity layer by adopting a dry etching process; the content of the constituent elements of the etching end point detection layer in the transparent microcavity layer and the medium layer is zero; when the third transparent microcavity layer of the end point detection area 2 is etched, the optical emission spectrum changes and the etching of the microcavity layer is stopped; removing the dielectric layer of the third pixel area;
step 4, forming a dielectric layer in the second pixel area, the third pixel area and the etching end point detection area 2 by photoetching, etching and other methods, and opening the first pixel area and the etching end point detection area 1; etching the second transparent microcavity layer by adopting a dry etching process; when the second transparent microcavity layer of the end point detection area 1 is etched, the optical emission spectrum changes and the etching of the microcavity layer is stopped when the first etching end point detection layer is etched; removing the dielectric layer; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
Further, the thickness of the first transparent microcavity layer is 3-5nm higher than that of the microcavity layer of the first pixel region which is finally needed to be obtained; the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 5-10nm higher than the thickness of the microcavity layer of the finally obtained second pixel region; the thickness of the third transparent microcavity layer, the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 8-12nm higher than that of the microcavity layer of the finally obtained third pixel region.
Further, the material of the reflective metal layer may be Al, ag, or metals such as Pt, pd, ti, etc.
Further, the material of the transparent microcavity layer is one or more of ITO (indium tin oxide), IZO (indium zinc oxide) and ZnO (zinc oxide).
Further, the first transparent microcavity layer, the second transparent microcavity layer and the third transparent microcavity layer are identical in material.
Further, the etching rate of the transparent microcavity layer and the reflecting metal layer is lower than 0.05A/s.
Further, the etching end point detection layer is a carbon-containing polymer and a metal oxide layer.
Further, the second etching end point detection layer is consistent with the first etching end point detection layer in material.
Further, the dielectric layer is one of SiNx (silicon nitride) and SiOx (silicon oxide) or a combination thereof.
The beneficial effects are that:
the preparation method of the pixel microcavity electrode structure of the organic light-emitting display is simple, achieves accurate control of etching thickness of microcavity electrodes through design of etching end layers, achieves that the OLED device subpixels have different microcavity lengths, enables the display screen subpixels to directly generate light with corresponding colors, improves brightness of a silicon-based OLED display screen, is low in process difficulty, and improves yield and economy of mass production.
Drawings
FIG. 1 is a schematic diagram of a substrate and a lead structure of a driving circuit in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 2 is a schematic diagram of a method for fabricating a pixel microcavity electrode structure according to an embodiment of the present invention, in which a reflective metal layer and a first transparent microcavity layer are formed on a substrate;
FIG. 3 is a schematic diagram illustrating a first etching endpoint detection layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 4 is a schematic diagram of a second transparent microcavity layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 5 is a schematic diagram of a second etching endpoint monitoring layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 6 is a schematic diagram of a third transparent microcavity layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 7 is a schematic diagram of a photoresist structure for forming an electrode pattern in a pixel region according to an embodiment of a method for fabricating a pixel microcavity electrode structure of the present invention;
FIG. 8 is a schematic diagram of a first, second, and third patterned pixel region formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 9 is a schematic diagram illustrating a photoresist removal process in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 10 is a schematic diagram of a dielectric layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 11 is a schematic diagram of a third pixel region covered with photoresist in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 12 is a schematic diagram of a dielectric layer structure of a third pixel region in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 13 is a schematic diagram of a method for fabricating a pixel microcavity electrode structure according to an embodiment of the present invention, wherein the photoresist is removed from the third pixel region;
FIG. 14 is a schematic view of a third transparent microcavity layer etched in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 15 is a schematic view illustrating a structure of removing a dielectric layer in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 16 is a schematic diagram of a dielectric layer formed in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 17 is a schematic diagram of a method for fabricating a pixel microcavity electrode structure according to an embodiment of the present invention, wherein a second pixel region, a third pixel region, and an etching endpoint detection region 2 are covered with photoresist;
FIG. 18 is a schematic diagram of a method for fabricating a pixel microcavity electrode structure according to an embodiment of the present invention, in which a dielectric layer not protected by photoresist is removed;
FIG. 19 is a schematic view showing a process for removing photoresist in an embodiment of a method for fabricating a pixel microcavity electrode structure according to the present invention;
FIG. 20 is a schematic diagram of a process for fabricating a pixel microcavity electrode structure according to an embodiment of the present invention, wherein the process includes etching a second transparent microcavity layer until reaching a first etching endpoint detection layer;
fig. 21 is a schematic diagram of a final electrode structure obtained by removing a dielectric layer in an embodiment of a method for manufacturing a pixel microcavity electrode structure according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
fig. 1 to 21 are schematic structural views corresponding to each step in an embodiment of a method for forming a pixel electrode structure according to the present invention.
As shown in fig. 1, a substrate 100 of a driving circuit is provided, on which a driving circuit lead structure 110 is disposed, responsible for conducting a driving voltage to an anode of a pixel electrode. The substrate of the driving circuit is provided with a plurality of pixel areas, in this embodiment, referring to red, green and blue sub-pixels of a conventional display device, the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the substrate is provided with an etching end point detection area 1 and an etching end point detection area 2 outside the pixel areas.
As shown in fig. 2, a reflective metal layer 200 and a first transparent microcavity layer 210 are prepared on a substrate 100 of a driving circuit. The thickness of the first transparent microcavity layer is between 10 and 150nm, and is 3 to 5nm higher than that of the microcavity layer of the finally obtained first pixel region.
The reflective metal layer has good reflectivity and conductivity, the material of the reflective metal layer can be Al, ag or metals such as Pt, pd and Ti, the transparent microcavity layer has the characteristics of good conductivity, high transmittance in the visible light range, work function matching OLED devices and the like, and the material of the transparent microcavity layer can be one or more of ITO, IZO, znO.
The invention adopts ion etching technology, and the etching products of different etched substances are different. The etch product is typically present in the form of a gas in an etch chamber in an etch apparatus. The optical emission spectra of different gases are different. By testing the optical emission spectrum of the gas in the etching chamber, it is possible to know what is currently being etched.
As shown in fig. 3, a patterning process, that is, a method of photolithography, etching, etc., is adopted to form a first etching endpoint detection layer 300 on a substrate, the first etching endpoint detection layer is protected by photolithography, film layers in other areas are etched away, and the first etching endpoint detection layer 300 is formed in the etching endpoint detection region 1. The main constituent elements of the etching end point detection layer have zero content in the transparent microcavity layer and the dielectric layer, and the dielectric layer is one or a combination of SiNx and SiOx; the etching end point detection layer may be a C-containing polymer, a metal oxide layer, or the like. If the etching reaches the etching end point detection layer, the etching is stopped. The etching end point detection layer contains material elements which are not contained in the transparent microcavity layer and the dielectric layer, and when the etching end point detection layer is etched, the material elements start to be separated out, the spectrum is changed, and the etching is stopped.
As shown in fig. 4, a second transparent microcavity layer 211 is formed on the substrate, and the second transparent microcavity layer is identical to the first transparent microcavity layer in material. The thickness of the second transparent microcavity layer is 50-200nm, and the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 5-10nm higher than the thickness of the microcavity layer of the finally obtained second pixel region. Because there is a period of overetching after etching to the end point detection layer, a change in the spectrum will be formed, and the transparent microcavity layer of 5-10nm will be overetched.
As shown in fig. 5, a patterning process, that is, by photolithography, etching, etc., is adopted to form a second etching endpoint detection layer 301 in the etching endpoint detection region 2; the second etching end point detection layer is consistent with the first etching end point detection layer in material.
As shown in fig. 6, a third transparent microcavity layer 212 is formed on the substrate, and the third transparent microcavity layer is made of the same material as the second and first transparent microcavity layers. And the third transparent microcavity layer is 100-300nm. Through practical experience conclusion, the thickness of the third transparent microcavity layer, the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 8-12nm higher than that of the microcavity layer of the finally obtained third pixel region.
As shown in fig. 7, a photoresist 400 of an electrode pattern is formed by a patterning method in preparation for etching the individual sub-pixel electrodes.
As shown in fig. 8, the transparent microcavity layer and the reflective metal layer, which are not protected by the photoresist, are etched away using an etching process to form patterned first, second and third pixel regions.
As shown in fig. 9, the photoresist 400 is removed.
As shown in fig. 10, a dielectric layer 500 is formed on a substrate, and the dielectric layer is one of SiNx and SiOx or a combination thereof.
As shown in fig. 11, the photoresist 401 is covered in the third pixel region by a patterning method, and the other regions are opened.
As shown in fig. 12, the dielectric layer 500 of the window, i.e., the dielectric layer 500 not covered by the photoresist, is removed using a dry etching process, leaving the dielectric layer of the third pixel region. The etching procedure contains CF 4 、O 2 And (3) etching the transparent microcavity layer and the reflecting metal layer at a rate lower than 0.05A/s.
As shown in fig. 13, the photoresist 401 is removed;
as shown in fig. 14, the third transparent microcavity layer 212 is etched using a dry etching process. The etching gas adopted in the dry etching process contains Cl 2 、BCl 3 、Ar、N 2 、O 2 One or more of them. And testing the optical emission spectrum in the etching cavity in real time, and when the third transparent microcavity layer 212 of the end point detection area 2 is etched to the second etching end point detection layer 301 after the third transparent microcavity layer is etched, changing the optical emission spectrum in the etching cavity to generate a new element gas spectrum, and stopping etching.
As shown in fig. 15, the dielectric layer 500 is removed using an etching process.
As shown in fig. 16, a dielectric layer 501 is formed on a substrate, and the dielectric layer is one of SiNx and SiOx or a combination thereof.
As shown in fig. 17, the second pixel region, the third pixel region and the etching end point detection region 2 are covered with photoresist 402 by a patterning method, and other regions are opened;
as shown in fig. 18, the dielectric layer 501 windowed by the first pixel region and the etching end point detection region 1 is removed using a dry etching process. The etching procedure contains CF 4 、O 2 And (3) etching the transparent microcavity layer and the reflecting metal layer at a rate lower than 0.05A/s.
As shown in fig. 19, the photoresist 402 is removed;
as shown in fig. 20, the second transparent microcavity layer is etched using a dry etching process. The etching gas contains Cl 2 、BCl 3 、Ar、N 2 、O 2 One or more of them. Real-time test etching cavityAnd (3) in the optical emission spectrum, when the second transparent microcavity layer 211 of the end point detection area 1 is etched and the first etching end point detection layer 300 is etched, the optical emission spectrum in the etching cavity changes, a new element gas spectrum appears, and etching is stopped.
As shown in fig. 21, the dielectric layer 501 is removed by using an etching process, so that a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are obtained in the first pixel region, the second pixel region and the third pixel region.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (9)
1. The preparation method of the pixel microcavity electrode structure of the organic light-emitting display is characterized by comprising the following steps of:
step 1, providing a substrate with an OLED driving circuit, wherein the substrate is provided with a first pixel area, a second pixel area and a third pixel area, and the three pixel areas correspond to pixel areas with different colors; the substrate is provided with an etching end point detection area outside the pixel area and comprises an etching end point detection area 1 and an etching end point detection area 2;
step 2, forming a reflective metal layer 200 and a first transparent microcavity layer 210 on a substrate; forming a first etching end point detection layer in the etching end point detection area 1 through a patterning process; forming a second transparent microcavity layer on the substrate; forming a second etching end point detection layer in the etching end point detection area 2 through a patterning process; forming a third transparent microcavity layer on the substrate; forming a first patterned pixel area, a second patterned pixel area and a third patterned pixel area by photoetching and etching methods;
step 3, forming a dielectric layer in the third pixel region through a patterning process, and opening the first pixel region, the second pixel region, the etching end point detection region 1 and the etching end point detection region 2; etching the third transparent microcavity layer by adopting a dry etching process; the content of the constituent elements of the etching end point detection layer in the transparent microcavity layer and the medium layer is zero; when the third transparent microcavity layer of the end point detection area 2 is etched, the optical emission spectrum changes and the etching of the microcavity layer is stopped; removing the dielectric layer of the third pixel area;
step 4, forming a dielectric layer in the second pixel area, the third pixel area and the etching end point detection area 2 by using a photoetching and etching method, and opening the first pixel area and the etching end point detection area 1; etching the second transparent microcavity layer by adopting a dry etching process; when the second transparent microcavity layer of the end point detection area 1 is etched, the optical emission spectrum changes and the etching of the microcavity layer is stopped when the first etching end point detection layer is etched; removing the dielectric layer; so far, a first transparent microcavity layer, a second transparent microcavity layer and a third transparent microcavity layer with different thicknesses are formed in the first pixel region, the second pixel region and the third pixel region.
2. The method for preparing the pixel microcavity electrode structure of the organic light-emitting display according to claim 1, wherein the thickness of the first transparent microcavity layer is 3-5nm higher than that of the microcavity layer of the first pixel region which is finally needed to be obtained; the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 5-10nm higher than the thickness of the microcavity layer of the finally obtained second pixel region; the thickness of the third transparent microcavity layer, the sum of the thickness of the second transparent microcavity layer and the thickness of the first transparent microcavity layer is 8-12nm higher than that of the microcavity layer of the finally obtained third pixel region.
3. The method for fabricating a pixel microcavity electrode structure of an organic light-emitting display according to claim 1, wherein the reflective metal layer is made of Al, ag or Pt, pd, ti metal.
4. The method of claim 1, wherein the transparent microcavity layer is made of one or more of ITO, IZO, znO.
5. The method for fabricating a pixel microcavity electrode structure of an organic light-emitting display according to claim 1, wherein the first transparent microcavity layer, the second transparent microcavity layer and the third transparent microcavity layer are formed of the same material.
6. The method of claim 1, wherein the etching rate of the transparent microcavity layer and the reflective metal layer is less than 0.05A/s.
7. The method for fabricating a pixel microcavity electrode structure of an organic light-emitting display according to claim 1, wherein the etching end-point detection layer is a carbon-containing polymer or metal oxide layer.
8. The method of claim 1, wherein the second etching endpoint detection layer is formed of a material identical to that of the first etching endpoint detection layer.
9. The method for fabricating a pixel microcavity electrode structure of an organic light-emitting display according to claim 1, wherein the dielectric layer is one of SiNx and SiOx or a combination thereof.
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| CN104966723A (en) * | 2015-07-27 | 2015-10-07 | 京东方科技集团股份有限公司 | Organic light emitting diode array substrate, preparation method and display device |
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