CN103235633B - A kind of bidirectional current reconditioning circuit and current scalping method thereof - Google Patents
A kind of bidirectional current reconditioning circuit and current scalping method thereof Download PDFInfo
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- CN103235633B CN103235633B CN201310179565.6A CN201310179565A CN103235633B CN 103235633 B CN103235633 B CN 103235633B CN 201310179565 A CN201310179565 A CN 201310179565A CN 103235633 B CN103235633 B CN 103235633B
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Abstract
The present invention discloses a kind of bidirectional current reconditioning circuit, comprises: a P type current mirror, and its input end connects input current; 2nd P type current mirror, its output terminal output reference output current; Additional P type current mirror group, its circuit is connected between a P type current mirror and the 2nd P type current mirror, and this additional P type current mirror group also circuit is connected with trim current source; Switch module, its circuit is connected between additional P type current mirror group and the 2nd P type current mirror, controls the trim current value size that additional P type current mirror group is supplemented or taken out; N-type current mirror, its inlet circuit connects a P type current mirror outputs, and circuit of output terminal connects the 2nd P type current mirror input end; One P type current mirror and N-type current mirror also circuit are connected with pull-up current source.The present invention can be applied in the chip system needing to obtain precision current source, by effectively reducing area and the complexity of required switch and finishing pad reduction chip, thus reduces the cost of chip.
Description
Technical field
The present invention relates to a kind of commutation technique be applied in large scale integrated circuit, be specifically related to a kind ofly be applied to bidirectional current reconditioning circuit in the system needing high precision steady current and current scalping method thereof.
Background technology
At present, usually one or more constant current source is accurately needed in many integrated circuit (IC) system, due to the reason such as imbalance of components and parts in the change of technique and integrated circuit, the constant current source usual On-Wafer Measurement stage is realized by finishing (trimming) accurately.Reconditioning circuit module comprises current mirror, due to finishing switch and repair pad (PAD) accordingly.Reconditioning circuit module is more complicated, and to account for the chip area of tool more, and testing cost also improves thereupon.
As shown in Figure 1, required electric current I out is produced by node 10 and delivers to other module of chip as reference current by existing electric current reconditioning circuit two groups of current mirror MN/MN0 and MP/MP0.Ideally identical with required reference current Iout by the electric current I of MP0.Due to technique change, the reason electric current I such as current mirror error are not equal to required reference current Iout usually, and their difference is with the random change of different chips.If I < Iout, in order to obtain required reference current Iout, we add by n the difference that PMOS current mirror (from MP1, MP2, to MPN) supplements two electric currents.If I > Iout we by the NMOS current mirror (from MN1, MN2, to MNN) that n is additional take out more than current differential.The number n of current mirror and current value Δ I etc. are determined by the precision of reference current and the variation range of current source I.The change of usual electric current I is about ± 30%.The current value sum of current mirror MP0 to MPN and current mirror MN0 to MNN is greater than 30% of current value I respectively, that is:
△I+△I/2+…+△I/2
(n-1)=30%*I （1）
The left side sum of formula 1 equals:
S
n=△I*（2-1/2
(n-2)） （2）
△I*（2-1/2
(n-2)）=30%*I （3）
Assuming that 1/2
(n-2)<<2, obtains:
（4）
If reference current value Iout accuracy requirement be less than 1%, n should value as follows:
（△I/2
(n-1)）/1≤1% （5）
2
(n-1)≥△I/（1%*1）=15 （6）
Obtain n=5.
Existing electric current reconditioning circuit needs 2n switch (SU1 ~ SUN, SD1 ~ SDN) and 2n finishing to pad (FU1 ~ FUN, FD1 ~ FDN) and corresponding control circuit.Electric current supplements and extraction completes in On-Wafer Measurement, burns corresponding finishing pad reach switch that closed pair answers to obtain the benchmark output current Iout of needs according to measurement result electric current or voltage system.
As shown in Figure 2, this electric current reconditioning circuit principle of work is as follows: control circuit comprises a pull-up current source, a reverser, and a fuse and repair pad accordingly.Fuse ground connection before test, node 20 is in electronegative potential, corresponding switch opens.As Iout< I, burn corresponding fuse by curtage mode, in control circuit, corresponding current source is drawn high node 20 and is closed required switch (SU1 ~ SUN).As Iout < I, similar control carrys out closing switch (SD1 ~ SDN) by burning corresponding fuse, thus takes out unnecessary current value.Because trim current, voltage are higher, the area of finishing pad is usually larger.For reducing chip area, shortening the test duration, needing a more simple electric current reconditioning circuit.
Summary of the invention
The invention provides a kind of bidirectional current reconditioning circuit and current scalping method thereof, finishing switch and corresponding finishing pad number can be reduced, thus reduce area that repair module occupies in the chips and test duration, reduce costs.
For achieving the above object, the invention provides a kind of bidirectional current reconditioning circuit, be characterized in, this circuit comprises:
One P type current mirror, its input end connects input current;
2nd P type current mirror, its output terminal output reference output current;
Additional P type current mirror group, its circuit is connected between a P type current mirror and the 2nd P type current mirror, and this additional P type current mirror group also circuit is connected with trim current source;
Switch module, its circuit is connected between additional P type current mirror group and the 2nd P type current mirror, controls the trim current value size that additional P type current mirror group is supplemented or taken out; And,
N-type current mirror, its inlet circuit connects a P type current mirror outputs, and circuit of output terminal connects the 2nd P type current mirror input end;
An above-mentioned P type current mirror and N-type current mirror also circuit are connected with pull-up current source.
Above-mentioned additional P type current mirror group comprises the additional PMOS current mirror that some circuit connect; Each additional PMOS current mirror circuit is connected with trim current source.
Above-mentioned switch module comprises:
Extra current mirror switches set, it comprises some extra current mirror switches, and each extra current mirror switch respectively circuit connects each additional PMOS current mirror;
First switch, its circuit is connected between extra current mirror switches set and a P type current mirror;
Second switch, its circuit is connected between extra current mirror switches set and the 2nd P type current mirror.
Above-mentioned additional P type current mirror group includes n additional PMOS current mirror, and the current value size in the trim current source that each additional PMOS current mirror connects respectively is △ I, △ I/2 ... △ I/2
(n-1), namely the current value size in trim current source is △ I/2
(n-1), n is integer and is more than or equal to the stepping-in amount that 1, n increases successively is 1.
Above-mentioned switch module also comprises finishing pad corresponding with each extra current mirror switch, the first switch and second switch respectively and control circuit.
A current scalping method for above-mentioned bidirectional current reconditioning circuit, be characterized in, the method comprises:
As benchmark output current Iout > I, then by burning the fuse corresponding to second switch and extra current mirror switch, closed corresponding switch, from the 2nd P type current mirror, take out unnecessary current value, obtaining Iout by the 2nd P type current mirror is required reference current value;
As benchmark output current Iout < I, then by burning the fuse of corresponding first switch and extra current mirror switch, closed corresponding switch, required current value is added in N-type current mirror, and obtains required reference current by N-type current mirror and the 2nd P type current mirror.
The present invention's a kind of bidirectional current reconditioning circuit and current scalping method thereof are compared with the electric current reconditioning circuit that prior art is used for large-scale integrated circuit, its advantage is, the present invention can be applied in the chip system needing to obtain precision current source, by effectively reducing area and the complexity of required switch and finishing pad reduction chip, thus reduce the cost of chip, large in electric current I variation range, time reference current Iout accuracy requirement is high, the minimizing circuit complexity that the present invention can be larger and area.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of prior art electric current reconditioning circuit;
Fig. 2 is the circuit diagram of prior art electric current reconditioning circuit breaker in middle and finishing pad circuit;
Fig. 3 is the circuit diagram of a kind of bidirectional current reconditioning circuit of the present invention.
Embodiment
Below in conjunction with accompanying drawing, further illustrate specific embodiments of the invention.
As shown in Figure 3, the present invention discloses a kind of bidirectional current reconditioning circuit, and this circuit comprises: P type current mirror the 1, a 2nd P type current mirror 2, N-type current mirror 3, additional P type current mirror group 4 and switch module 5.
One P type current mirror 1 comprises one group of PMOS MP and MP0, and the input end of a P type current mirror 1 connects input current I.
2nd P type current mirror 2 comprises one group of PMOS MPA and MPB, and the output terminal of the 2nd P type current mirror 2 connects the output terminal of bidirectional current reconditioning circuit and output reference output current Iout.
N-type current mirror 3 comprises one group of NMOS tube MN and MN0, and the inlet circuit of N-type current mirror 3 connects P type current mirror 1 output terminal, and the circuit of output terminal of N-type current mirror 3 connects described 2nd P type current mirror 2 input end.
In the present embodiment, a P type current mirror 1 is gone back circuit with N-type current mirror 3 and is connected with pull-up current source I0.
Additional P type current mirror group 4 circuit is connected between a P type current mirror 1 and the 2nd P type current mirror 2, and additional P type current mirror group 4 comprises additional PMOS current mirror MP1, MP2 that n circuit connects ... MPN; Each additional PMOS current mirror circuit is connected with trim current source, the value that wherein additional PMOS current mirror MP1 circuit connects trim current source is △ I, and the value that additional PMOS current mirror MP2 circuit connects trim current source is △ I/2 ... the value that additional PMOS current mirror MPN circuit connects trim current source is △ I/2
n,by that analogy.Namely the current value size △ I/2 in the trim current source of circuit connection distinguishes in the additional PMOS current mirror institute of n
n, n is integer and is more than or equal to the stepping-in amount that 0, n increases successively is 1.
Switch module 5 circuit is connected between additional P type current mirror group 4 and the 2nd P type current mirror 2, for controlling the trim current value size that additional P type current mirror group 4 is supplemented or taken out.
Switch module 5 comprises: extra current mirror switches set, the first switch S U, second switch SD.
First switch S U circuit is connected between extra current mirror switches set and a P type current mirror 1.
Second switch SD circuit is connected between extra current mirror switches set and the 2nd P type current mirror 2.
Extra current mirror switches set comprises n the extra current mirror switch S 1, the S2 that are connected in parallel ... SN, each extra current mirror switch respectively circuit connects each additional PMOS current mirror, such as: extra current mirror switch S 1 circuit connects additional PMOS current mirror MP1, extra current mirror switch S 2 circuit connects additional PMOS current mirror MP2, extra current mirror switch S N circuit connects additional PMOS current mirror MPN, by that analogy.
As Fig. 3 and shown in composition graphs 2, switch module 5 also comprises finishing pad corresponding with each extra current mirror switch S 1 ~ SN, the first switch S U and second switch SD respectively and control circuit.
The present invention also discloses a kind of current scalping method being applicable to above-mentioned bidirectional current reconditioning circuit, and the method comprises:
As benchmark output current Iout > I, then by burning the fuse corresponding to second switch SD and extra current mirror switch S 1 ~ SN switch, closed corresponding switch, from the MPA of the 2nd P type current mirror 2, take out unnecessary current value, by the 2nd P type current mirror 2(MPA/MPB) to obtain Iout be required reference current value.
As benchmark output current Iout < I, then by burning the fuse of corresponding first switch S U and extra current mirror switch S 1 ~ SN switch, closed corresponding switch, required current value is added in the MN of N-type current mirror 3, and by N-type current mirror 3(MN/MN0) and the 2nd P type current mirror 2(MPA/MPB) obtain required reference current.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (6)
1. a bidirectional current reconditioning circuit, is characterized in that, this circuit comprises:
One P type current mirror (1), its input end connects input current I;
2nd P type current mirror (2), its output terminal output reference output current Iout;
Additional P type current mirror group (4), its circuit is connected between a described P type current mirror (1) and the 2nd P type current mirror (2), and this additional P type current mirror group (4) is gone back circuit and is connected with trim current source;
Switch module (5), its circuit is connected between described additional P type current mirror group (4) and the 2nd P type current mirror (2), controls the trim current value size that described additional P type current mirror group (4) is supplemented or taken out; And,
N-type current mirror (3), its inlet circuit connects described P type current mirror (1) output terminal, and circuit of output terminal connects described 2nd P type current mirror (2) input end;
A described P type current mirror (1) and N-type current mirror (3) are gone back circuit and are connected with pull-up current source (I0).
2. bidirectional current reconditioning circuit as claimed in claim 1, is characterized in that, described additional P type current mirror group (4) comprises the additional PMOS current mirror that some circuit connect; Each additional PMOS current mirror circuit is connected with trim current source.
3. bidirectional current reconditioning circuit as claimed in claim 2, it is characterized in that, described switch module (5) comprises:
Extra current mirror switches set, it comprises some extra current mirror switches, and each extra current mirror switch respectively circuit connects each described additional PMOS current mirror;
First switch (SU), its circuit is connected between described extra current mirror switches set and a P type current mirror (1);
Second switch (SD), its circuit is connected between described extra current mirror switches set and the 2nd P type current mirror (2).
4. bidirectional current reconditioning circuit as claimed in claim 2, it is characterized in that, described additional P type current mirror group (4) includes n additional PMOS current mirror, and the current value size in the trim current source that each additional PMOS current mirror connects respectively is △ I, △ I/2 ... Δ I/2
(n-1), namely the current value size in trim current source is Δ I/2
(n-1)n is integer and is more than or equal to 1, the stepping-in amount that n increases successively is 1, the maximum current value in the trim current source that △ I connects for PMOS current mirror additional in additional P type current mirror group (4), the number n of wherein maximum current value △ I and additional PMOS current mirror is determined by the precision of benchmark output current Iout and the variation range of input current source I.
5. bidirectional current reconditioning circuit as claimed in claim 3, it is characterized in that, described switch module (5) also comprises finishing pad corresponding with each extra current mirror switch, the first switch (SU) and second switch (SD) respectively and control circuit.
6., as a current scalping method for the bidirectional current reconditioning circuit in claim 3 or 5 as described in any one claim, it is characterized in that, the method comprises:
As benchmark output current Iout > I, then by burning the fuse corresponding to second switch (SD) and extra current mirror switch, closed corresponding switch, from the 2nd P type current mirror (2), take out unnecessary current value, obtaining Iout by the 2nd P type current mirror (2) is required reference current value;
As benchmark output current Iout < I, then by burning the fuse of corresponding first switch (SU) and extra current mirror switch, closed corresponding switch, required current value is added in N-type current mirror (3), and obtain required reference current by N-type current mirror (3) and the 2nd P type current mirror (2).
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| CN201310179565.6A CN103235633B (en) | 2013-05-15 | 2013-05-15 | A kind of bidirectional current reconditioning circuit and current scalping method thereof |
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| CN103235633B true CN103235633B (en) | 2015-10-21 |
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| CN107636955B (en) * | 2015-05-12 | 2020-10-27 | 蒂森克虏伯普利斯坦股份公司 | Reversible current mirror and use thereof in bidirectional communication |
| CN104965560B (en) * | 2015-07-13 | 2017-10-03 | 深圳市富满电子集团股份有限公司 | A kind of high-precision wide current range current mirror |
| FR3052271B1 (en) | 2016-06-06 | 2020-06-05 | STMicroelectronics (Alps) SAS | VOLTAGE CONTROL DEVICE |
| CN108427472B (en) * | 2018-03-19 | 2020-04-21 | 广州慧智微电子有限公司 | Reference voltage output circuit |
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| US6819164B1 (en) * | 2002-10-17 | 2004-11-16 | National Semiconductor Corporation | Apparatus and method for a precision bi-directional trim scheme |
| CN101025637A (en) * | 2006-02-20 | 2007-08-29 | 智原科技股份有限公司 | Current mode trimming device |
| CN102541148A (en) * | 2010-12-31 | 2012-07-04 | 国民技术股份有限公司 | Two-way adjustable reference current generating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138868B2 (en) * | 2004-08-11 | 2006-11-21 | Texas Instruments Incorporated | Method and circuit for trimming a current source in a package |
| KR100660875B1 (en) * | 2005-08-25 | 2006-12-26 | 삼성전자주식회사 | Semiconductor memory device having trimmed voltage generator and method for generating trimmed voltage of semiconductor memory device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6819164B1 (en) * | 2002-10-17 | 2004-11-16 | National Semiconductor Corporation | Apparatus and method for a precision bi-directional trim scheme |
| CN101025637A (en) * | 2006-02-20 | 2007-08-29 | 智原科技股份有限公司 | Current mode trimming device |
| CN102541148A (en) * | 2010-12-31 | 2012-07-04 | 国民技术股份有限公司 | Two-way adjustable reference current generating device |
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Address after: 201203 No. 12, Lane 647, Songtao Road, Shanghai China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai Patentee after: Juchen Semiductor Co., Ltd. Address before: 201203 No. 12, Lane 647, Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Patentee before: Giantec Semiconductor Inc. |
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