CN103235631A - Voltage stabilizer circuit - Google Patents
Voltage stabilizer circuit Download PDFInfo
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- CN103235631A CN103235631A CN2013101290736A CN201310129073A CN103235631A CN 103235631 A CN103235631 A CN 103235631A CN 2013101290736 A CN2013101290736 A CN 2013101290736A CN 201310129073 A CN201310129073 A CN 201310129073A CN 103235631 A CN103235631 A CN 103235631A
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- nmos pipe
- pipe
- clamping circuit
- drain terminal
- nmos
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310129073.6A CN103235631B (en) | 2013-04-15 | 2013-04-15 | Voltage stabilizer circuit |
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CN201310129073.6A CN103235631B (en) | 2013-04-15 | 2013-04-15 | Voltage stabilizer circuit |
Publications (2)
Publication Number | Publication Date |
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CN103235631A true CN103235631A (en) | 2013-08-07 |
CN103235631B CN103235631B (en) | 2015-07-08 |
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CN201310129073.6A Active CN103235631B (en) | 2013-04-15 | 2013-04-15 | Voltage stabilizer circuit |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107066007A (en) * | 2017-05-09 | 2017-08-18 | 普冉半导体(上海)有限公司 | A kind of voltage-stabiliser circuit |
CN107170420A (en) * | 2017-07-12 | 2017-09-15 | 深圳市航顺芯片技术研发有限公司 | A kind of circuit structure for LCD driving bias voltages |
CN108141287A (en) * | 2015-08-10 | 2018-06-08 | 菲尼萨公司 | Out of band signal detects |
CN108847836A (en) * | 2018-08-10 | 2018-11-20 | 深圳南云微电子有限公司 | Electrostatic discharge self-protection circuit and self-protection method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2259376A (en) * | 1991-08-24 | 1993-03-10 | Motorola Gmbh | Voltage and current reference source |
CN1161490A (en) * | 1995-09-04 | 1997-10-08 | 三菱电机株式会社 | Voltage generation circuit that can stably generate intermediate potential independent of threshold votlage |
JP2763531B2 (en) * | 1986-10-13 | 1998-06-11 | 松下電器産業株式会社 | MOS constant voltage circuit |
US6040735A (en) * | 1996-09-13 | 2000-03-21 | Samsung Electronics Co., Ltd. | Reference voltage generators including first and second transistors of same conductivity type |
US6344771B1 (en) * | 2000-08-29 | 2002-02-05 | Mitsubishi Denki Kabushiki Kaisha | Step-down power-supply circuit |
CN101751061A (en) * | 2008-12-17 | 2010-06-23 | 上海华虹Nec电子有限公司 | High voltage stabilizer and high voltage intrinsic NMOS tube |
CN101853041A (en) * | 2010-03-26 | 2010-10-06 | 东莞电子科技大学电子信息工程研究院 | High-voltage pre-regulation voltage reduction circuit for use in wide input range |
-
2013
- 2013-04-15 CN CN201310129073.6A patent/CN103235631B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2763531B2 (en) * | 1986-10-13 | 1998-06-11 | 松下電器産業株式会社 | MOS constant voltage circuit |
GB2259376A (en) * | 1991-08-24 | 1993-03-10 | Motorola Gmbh | Voltage and current reference source |
CN1161490A (en) * | 1995-09-04 | 1997-10-08 | 三菱电机株式会社 | Voltage generation circuit that can stably generate intermediate potential independent of threshold votlage |
US6040735A (en) * | 1996-09-13 | 2000-03-21 | Samsung Electronics Co., Ltd. | Reference voltage generators including first and second transistors of same conductivity type |
US6344771B1 (en) * | 2000-08-29 | 2002-02-05 | Mitsubishi Denki Kabushiki Kaisha | Step-down power-supply circuit |
CN101751061A (en) * | 2008-12-17 | 2010-06-23 | 上海华虹Nec电子有限公司 | High voltage stabilizer and high voltage intrinsic NMOS tube |
CN101853041A (en) * | 2010-03-26 | 2010-10-06 | 东莞电子科技大学电子信息工程研究院 | High-voltage pre-regulation voltage reduction circuit for use in wide input range |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108141287A (en) * | 2015-08-10 | 2018-06-08 | 菲尼萨公司 | Out of band signal detects |
CN113765592A (en) * | 2015-08-10 | 2021-12-07 | 菲尼萨公司 | Out-of-band signal detection |
CN113765592B (en) * | 2015-08-10 | 2024-04-16 | 菲尼萨公司 | Out-of-band signal detection |
CN107066007A (en) * | 2017-05-09 | 2017-08-18 | 普冉半导体(上海)有限公司 | A kind of voltage-stabiliser circuit |
CN107170420A (en) * | 2017-07-12 | 2017-09-15 | 深圳市航顺芯片技术研发有限公司 | A kind of circuit structure for LCD driving bias voltages |
CN108847836A (en) * | 2018-08-10 | 2018-11-20 | 深圳南云微电子有限公司 | Electrostatic discharge self-protection circuit and self-protection method |
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Publication number | Publication date |
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CN103235631B (en) | 2015-07-08 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhou Ping Inventor after: Li Zhaogui Inventor after: Wang Nan Inventor before: Li Zhaogui |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LI ZHAOGUI TO: ZHOU PING LI ZHAOGUI WANG NAN |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160722 Address after: 200000 Shanghai City, Pudong New Area Chinese Jing (Shanghai) Free Trade Zone No. 351 Building No. 2 room A676-22 Patentee after: Pu ran semiconductor (Shanghai) Co., Ltd. Address before: 214102 Jiangsu province Wuxi city Xishan District Furong Road No. 99 three six 716 zuiun Patentee before: Wuxi Puya Semiconductor Co., Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 504, 560 Shengxia Road, Pudong New Area, Shanghai 200000 Patentee after: Praran semiconductor (Shanghai) Co., Ltd Address before: 200000 Shanghai City, Pudong New Area Chinese Jing (Shanghai) Free Trade Zone No. 351 Building No. 2 room A676-22 Patentee before: PUYA SEMICONDUCTOR (SHANGHAI) Co.,Ltd. |