CN103235452A - Array substrate and display device - Google Patents
Array substrate and display device Download PDFInfo
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- CN103235452A CN103235452A CN2013101094957A CN201310109495A CN103235452A CN 103235452 A CN103235452 A CN 103235452A CN 2013101094957 A CN2013101094957 A CN 2013101094957A CN 201310109495 A CN201310109495 A CN 201310109495A CN 103235452 A CN103235452 A CN 103235452A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/128—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode field shaping
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Abstract
The invention provides an array substrate which comprises a substrate, wherein a plurality of criss-cross grid and data lines and a plurality of uniformly distributed pixel units are formed on the substrate; each pixel unit comprises a thin film transistor and pixel and public electrodes used for forming an electric field; at least one of the pixel and public electrodes of each pixel unit comprises a bent slit electrode; a grid line is arranged at the bent part of the slit electrode; the source electrodes of the thin film transistors in the adjacent pixel units positioned on the two sides of each data line are both connected to the same data line; and the grid electrodes of the thin film transistors in the adjacent pixel units positioned on the two sides of each data line are connected to different grid lines respectively. Correspondingly, the invention further provides a display device comprising the array substrate. The array substrate can compensate color error and avoid light leakage.
Description
Technical field
The present invention relates to the display technique field, be specifically related to a kind of array base palte and display device.
Background technology
Along with the development of display fabrication techniques, LCD Technology development has replaced traditional crt display unit gradually and has become the main flow of following flat-panel monitor rapidly.In the LCD Technology field, TFT-LCD(Thin Film Transistor Liquid Crystal Display, Thin Film Transistor-LCD) with its large scale, highly integrated, powerful, technology flexibly, advantage such as low cost and be widely used in fields such as televisor, computer, mobile phone.
Wherein, ADS(ADvanced Super Dimension Switch, ADSDS, a senior super dimension switch technology, abbreviation ADS) type TFT-LCD is widely used in field of liquid crystal owing to have high resolving power, high permeability, low-power consumption, wide visual angle, high aperture, low aberration, no water of compaction ripple advantages such as (push Mura).The electric field that the electric field that ADS type TFT-LCD produces by slit-shaped electrode edge in the same plane and slit-shaped electrode layer and plate electrode interlayer produce forms multi-dimensional electric field, make in the liquid crystal cell between the slit-shaped electrode, all aligned liquid-crystal molecules can both produce rotation directly over the electrode, thereby improved the liquid crystal work efficiency and increased light transmission efficiency, and then improved the picture quality of TFT-LCD product.
Thereby in order to improve the transmitance that aperture opening ratio improves display device, a kind of HADS(High aperture ADS has appearred, a high aperture-senior super dimension switch technology) type TFT-LCD.Further, in order to shorten the pixel duration of charging to realize low cost, high-quality picture shows, the display panel of existing HADS type TFT-LCD adopts double grid type of drive (Dual Gate) usually, array base palte wherein comprises underlay substrate, be formed on the grid line on the underlay substrate, data line and evenly distributed a plurality of pixel cells, each pixel cell includes thin film transistor (TFT) (TFT), with the pixel electrode that is used to form electric field (Pixel electrode) and public electrode (Com electrode), described pixel electrode and public electrode are used for driving the liquid crystal deflecting element of this pixel cell correspondence; The source electrode that is arranged in the thin film transistor (TFT) of a data line both sides adjacent unit pixel all is connected to this data line (Data line), grid is connected to different grid line (Gate line) respectively, makes to be provided with two grid lines between per two row adjacent unit pixel.
The pixel cell of existing HADS type TFT-LCD is generally one-domain structure (1-Domain), wherein, the direction unanimity of the multi-dimensional electric field that produces between the pixel electrode in each pixel cell and the public electrode is so the yawing moment of the liquid crystal molecule of each pixel cell correspondence is also consistent.But the refractive index difference of liquid crystal molecule under different visual angles, its optical path difference are also different, cause it to see through the optical wavelength range difference, thereby cause when different visual angles, and the colourity of liquid crystal molecule is variant, also namely produces color offset phenomenon.For example, when being parallel to the optical axis direction of liquid crystal molecule, it is less than normal to see through optical wavelength, produces blue partially phenomenon (Bluish), and perpendicular to the optical axis direction of liquid crystal molecule the time, it is bigger than normal to see through optical wavelength, produces yellow partially phenomenon (Yellowish).That is to say that owing to adopt one-domain structure, the yawing moment of the liquid crystal molecule of each pixel cell correspondence is all consistent, causes the whole colour cast of liquid crystal panel comparatively serious.
Summary of the invention
Technical matters to be solved by this invention is at existing above-mentioned defective in the prior art, provides a kind of and can either compensate colour cast, can avoid array base palte and the display device of light leak again.
Solve the technical scheme that the technology of the present invention problem adopts:
Described array base palte comprises underlay substrate, be formed with horizontal vertical staggered many grid lines and data line on the described underlay substrate, and evenly distributed a plurality of pixel cells, each pixel cell includes thin film transistor (TFT), with the pixel electrode that is used to form electric field and public electrode, wherein, the described public electrode of each pixel cell and pixel electrode have a gap electrode that comprises bending at least, and be provided with a grid line in the bending place of described gap electrode, the source electrode that is arranged in the thin film transistor (TFT) of the adjacent described pixel cell in data line both sides all is connected to same data line, and grid is connected to different grid lines respectively.
Preferably, the bending place of the described gap electrode in each pixel cell all is positioned at the middle part of described pixel cell.
Preferably, the slit of the described gap electrode in the same pixel cell all be arranged in parallel.
Preferably, adjacent two positions of pixel cell on underlay substrate all are in staggered distribution on the grid line direction, so that described grid line is straight line, and the distance between adjacent two grid lines equals the length of described pixel cell on the direction vertical with grid line half.
Preferably, the slit overbending direction of the gap electrode in adjacent two pixel cells is opposite on the described grid line direction; Identical with the slit overbending direction of gap electrode in adjacent two pixel cells on the vertical direction of grid line.
Preferably, described array base palte also comprises the public electrode wire that is formed on the underlay substrate, and the public electrode in each pixel cell all links to each other with public electrode wire;
Described public electrode wire and data line are alternately arranged on underlay substrate and are parallel to each other;
Pixel electrode in each pixel cell and public electrode are all between a data line and a public electrode wire adjacent with this data line.
Preferably, the data line that links to each other with the source electrode of thin film transistor (TFT) in each pixel cell, and the public electrode wire that links to each other with public electrode in each pixel cell, all with this pixel cell in the slit of gap electrode of corresponding part parallel.
Preferably, the drain electrode of thin film transistor (TFT) all is connected with pixel electrode in this pixel cell in each pixel cell;
Described array base palte also comprises passivation layer, and described passivation layer is arranged between public electrode and the pixel electrode.
Preferably, the public electrode in each pixel cell is the gap electrode that comprises bending, and pixel electrode is plate electrode;
Perhaps, the pixel electrode in each pixel cell is the gap electrode that comprises bending, and public electrode is plate electrode;
Perhaps, the public electrode in each pixel cell and pixel electrode are the gap electrode that comprises bending.
The present invention also provides a kind of display device that comprises above-mentioned array base palte simultaneously.
Beneficial effect:
Public electrode on the array base palte of the present invention in each pixel cell and pixel electrode have a gap electrode that comprises bending at least, make the direction of an electric field that forms between public electrode in each pixel cell and the pixel electrode comprise two kinds of directions, thereby make the yawing moment of liquid crystal molecule of each pixel cell correspondence also be divided into two kinds, therefore each pixel cell all can be divided into two zones that the visual angle is different, has compensated effectively because of liquid crystal molecule only to have the colour cast that single yawing moment causes;
The bending place of the gap electrode in each pixel cell is provided with a grid line, has avoided the caused light leakage phenomena in dark space that forms in the bending place of gap electrode effectively.
Description of drawings
Fig. 1 is the planar structure synoptic diagram of array base palte behind the completing steps s101 in the embodiment of the invention 2;
Fig. 2 is the planar structure synoptic diagram of array base palte behind the completing steps s102 in the embodiment of the invention 2;
Fig. 3 is the planar structure synoptic diagram of array base palte behind the completing steps s103 in the embodiment of the invention 2;
Fig. 4 is the planar structure synoptic diagram of array base palte behind the completing steps s104 in the embodiment of the invention 2;
Fig. 5 is the planar structure synoptic diagram of array base palte behind the completing steps s105 in the embodiment of the invention 2.
Wherein: the 1-grid; The 2-grid line; The 3-semiconductor layer; The 4-source electrode; The 5-drain electrode; The 6-data line; The 7-public electrode wire; The 8-pixel electrode; The 9-public electrode.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with drawings and Examples array base palte of the present invention and display device are described in further detail.
Embodiment 1:
Present embodiment provides a kind of array base palte, comprise underlay substrate, be formed on horizontal vertical staggered many grid lines and data line and evenly distributed a plurality of pixel cells on the described underlay substrate, each pixel cell includes thin film transistor (TFT) and is used to form pixel electrode and the public electrode of electric field.
The described public electrode of each pixel cell and pixel electrode have a gap electrode that comprises bending at least, make the direction of an electric field that forms between public electrode in each pixel cell and the pixel electrode comprise two kinds of directions, thereby make the yawing moment of liquid crystal molecule of each pixel cell correspondence also be divided into two kinds, and the pixel cell that causes having the liquid crystal molecule correspondence of two kinds of yawing moments is divided into two zones that the visual angle is different, compensated the caused colour cast of liquid crystal molecule that only has single yawing moment effectively;
The bending place of the gap electrode in each pixel cell is provided with a grid line, with the caused light leakage phenomena of avoiding forming in the bending place of described gap electrode in dark space;
The source electrode that is arranged in the thin film transistor (TFT) of the adjacent described pixel cell in data line both sides all is connected to same data line, grid is connected to different grid lines respectively, and (this different grid line can be adjacent grid line, also can be non-conterminous grid line), namely described array base palte adopts the double grid type of drive.
Preferably, the bending place of the described gap electrode in each pixel cell all is positioned at the middle part of described pixel cell; The slit of the described gap electrode in the same pixel cell all be arranged in parallel.Make the Electric Field Distribution scope identical (or almost identical) of two kinds of directions forming between public electrode and the pixel electrode in each pixel cell, thereby compensate colour cast better.
Preferably, adjacent two positions of pixel cell on underlay substrate all are in staggered distribution on the grid line direction, so that described grid line is straight line, and the distance between adjacent two grid lines equals the length of described pixel cell on the direction vertical with grid line half, and namely adjacent two grid lines are equidistant arbitrarily.In the array base palte of existing employing double grid type of drive, grid line all is arranged between the adjacent two row pixel cells, and in the present embodiment, every grid line all is arranged alternately between the middle part and adjacent two row pixel cells of pixel cell, so the arrangement mode of grid line has compared with prior art increased aperture opening ratio in the present embodiment.
Preferably, the slit overbending direction of the gap electrode in adjacent two pixel cells is opposite on the described grid line direction; Identical with the slit overbending direction of gap electrode in adjacent two pixel cells on the vertical direction of grid line, in order to can arrange more pixel cell on the underlay substrate.
Preferably, described array base palte also comprises the public electrode wire that is formed on the underlay substrate, and the public electrode in each pixel cell all links to each other with public electrode wire; Described public electrode wire and data line are alternately arranged on underlay substrate and are parallel to each other; Pixel electrode in each pixel cell and public electrode are all between a data line and a public electrode wire adjacent with this data line.The data line that links to each other with the source electrode of thin film transistor (TFT) in each pixel cell, and the public electrode wire that links to each other with public electrode in each pixel cell, all with this pixel cell in the slit of gap electrode of corresponding part parallel.Adopt pixel cell aperture opening ratio when underlay substrate is arranged of this structure higher, also be conducive to pixel cell arranging on underlay substrate.
Preferably, the drain electrode of thin film transistor (TFT) all is connected with pixel electrode in this pixel cell in each pixel cell; Described array base palte also comprises passivation layer, and described passivation layer is arranged between public electrode and the pixel electrode.
Preferably, the public electrode in each pixel cell is the gap electrode that comprises bending, and pixel electrode is plate electrode;
Perhaps, the pixel electrode in each pixel cell is the gap electrode that comprises bending, and public electrode is plate electrode;
Perhaps, the public electrode in each pixel cell and pixel electrode are the gap electrode that comprises bending.
Present embodiment also provides a kind of display device that comprises above-mentioned array base palte simultaneously.Described display device can be any product or parts with Presentation Function such as liquid crystal panel, Electronic Paper, oled panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
Embodiment 2:
Present embodiment provides a kind of array base palte, comprises underlay substrate, is formed on horizontal vertical staggered many grid lines and data line, public electrode wire, gate insulator, passivation layer and evenly distributed a plurality of pixel cells on the underlay substrate.
Each pixel cell includes thin film transistor (TFT) and is used to form pixel electrode and the public electrode of electric field; Wherein, public electrode in each pixel cell is the gap electrode that comprises bending, pixel electrode is plate electrode, bending place at described public electrode (being gap electrode) is provided with a grid line, with the dark space light leak of avoiding described bending place to form, and the bending place of described public electrode is positioned at the middle part of described pixel cell, also is the middle part that described grid line is positioned at described pixel cell; The slit of the public electrode in the same pixel cell all be arranged in parallel; Each thin film transistor (TFT) includes grid, semiconductor layer (being also referred to as active layer), source electrode and drain electrode.
The source electrode that is arranged in the thin film transistor (TFT) of same data line both sides and adjacent unit pixel all is connected to this same data line, grid is connected to two different grid lines respectively, and (grid of two adjacent pixel unit as shown in Figure 5 is to be connected on two adjacent grid lines, this is a kind of situation wherein just), drain electrode all with the connection of corresponding pixel electrode, the i.e. described array base palte employing of present embodiment double grid type of drive.Adjacent two positions of pixel cell on underlay substrate all are in staggered distribution on the grid line direction, so that described grid line is straight line, and the distance between adjacent two grid lines equals the length of described pixel cell on the direction vertical with grid line half.The slit overbending direction of the public electrode on the grid line direction in adjacent two pixel cells is opposite; Identical with the slit overbending direction of public electrode in adjacent two pixel cells on the vertical direction of grid line.
Described public electrode wire links to each other with public electrode in each pixel cell, is used to public electrode that voltage is provided; Described public electrode wire and data line are alternately arranged on underlay substrate and are parallel to each other; Pixel electrode in each pixel cell and public electrode are all between a data line and a public electrode wire adjacent with this data line.The data line that links to each other with the source electrode of thin film transistor (TFT) in each pixel cell, and the public electrode wire that links to each other with public electrode in each pixel cell, all with this pixel cell in the slit of gap electrode of corresponding part parallel.
Described gate insulator is arranged between the grid and semiconductor layer of thin film transistor (TFT) in each pixel cell, and described passivation layer is arranged between public electrode and the pixel electrode, all plays the effect of insulation.
Present embodiment also provides a kind of display device that comprises above-mentioned array base palte simultaneously.Described display device can be any product or parts with Presentation Function such as liquid crystal panel, Electronic Paper, oled panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
Describe the method for making of the described array base palte of present embodiment in detail below in conjunction with accompanying drawing 1-Fig. 5.Though be formed with a plurality of evenly distributed pixel cells on the described array base palte of present embodiment, for ease of describing and understanding, a kind of situation of adjacent two pixel cell structures only be shown among accompanying drawing 1-Fig. 5.And, for convenient each layer pattern of observing, the pixel electrode 8 in the accompanying drawing and public electrode 9 have all been carried out translucentization processing.
This method comprises the steps:
S100., one underlay substrate is provided.
Described underlay substrate should be through the dustless inclusion-free ion in clean back.Described underlay substrate can adopt transparency carriers such as glass substrate, quartz base plate, plastic base.
S101. as shown in Figure 1, by the figure of composition technology at underlay substrate (not shown) formation grid 1 and grid line 2, described grid 1 is continuous with corresponding grid line 2.
S102. as shown in Figure 2, on the underlay substrate of completing steps s101, form the figure of gate insulator (not shown) and semiconductor layer 3 successively by composition technology, described gate insulator covers on the underlay substrate of completing steps s101 fully, therefore also cover on grid 1 and the grid line 2, described semiconductor layer 3 be arranged on corresponding grid 1 directly over.
S103. as shown in Figure 3, form the figure of source electrode 4, drain electrode 5, data line 6 and public electrode wire 7 at the underlay substrate of completing steps s102 by composition technology, described source electrode 4 links to each other with semiconductor layer 3 respectively with drain electrode 5, and described source electrode 4 and drain and be formed with raceway groove between 5, described source electrode 4 links to each other with corresponding data line 6.
Wherein, step s102 and step s103 can utilize the normal masks plate technique and adopt twice composition technology to finish, and also can utilize duotone mask plate (as half-tone mask plate (Half Tone Mask) or gray mask plate (Gray Tone Mask)) technology to finish in a composition technological process.
S104. as shown in Figure 4, by the figure of composition technology at the tabular pixel electrode 8 of underlay substrate formation of completing steps s103, described pixel electrode 8 is continuous with corresponding drain electrode 5.
S105. as shown in Figure 5, on the underlay substrate of completing steps s104, form the passivation layer (not shown) successively and public electrode 9(is gap electrode by composition technology) figure, described passivation layer covers on the underlay substrate of completing steps s104 fully, and is formed with on the described passivation layer for connecting the via hole of public electrode 9 with public electrode wire 7.
Other structures in the present embodiment and effect are all identical with embodiment 1, repeat no more here.The above composition technology generally includes technologies such as photoresist coating, exposure, development, etching, photoresist lift off.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. array base palte, comprise underlay substrate, be formed with horizontal vertical staggered many grid lines and data line on the described underlay substrate, and evenly distributed a plurality of pixel cells, each pixel cell includes thin film transistor (TFT), with the pixel electrode that is used to form electric field and public electrode, it is characterized in that, the described public electrode of each pixel cell and pixel electrode have a gap electrode that comprises bending at least, and be provided with a grid line in the bending place of described gap electrode, the source electrode that is arranged in the thin film transistor (TFT) of the adjacent described pixel cell in data line both sides all is connected to same data line, and grid is connected to different grid lines respectively.
2. array base palte according to claim 1 is characterized in that,
The bending place of the described gap electrode in each pixel cell all is positioned at the middle part of described pixel cell.
3. array base palte according to claim 2 is characterized in that, the slit of the described gap electrode in the same pixel cell all be arranged in parallel.
4. array base palte according to claim 2 is characterized in that,
Adjacent two positions of pixel cell on underlay substrate all are in staggered distribution on the grid line direction, so that described grid line is straight line, and the distance between adjacent two grid lines equals the length of described pixel cell on the direction vertical with grid line half.
5. array base palte according to claim 4 is characterized in that,
The slit overbending direction of the gap electrode on the described grid line direction in adjacent two pixel cells is opposite; Identical with the slit overbending direction of gap electrode in adjacent two pixel cells on the vertical direction of grid line.
6. array base palte according to claim 1 is characterized in that,
Described array base palte also comprises the public electrode wire that is formed on the underlay substrate, and the public electrode in each pixel cell all links to each other with public electrode wire;
Described public electrode wire and data line are alternately arranged on underlay substrate and are parallel to each other;
Pixel electrode in each pixel cell and public electrode are all between a data line and a public electrode wire adjacent with this data line.
7. array base palte according to claim 6 is characterized in that,
The data line that links to each other with the source electrode of thin film transistor (TFT) in each pixel cell, and the public electrode wire that links to each other with public electrode in each pixel cell, all with this pixel cell in the slit of gap electrode of corresponding part parallel.
8. array base palte according to claim 1 is characterized in that,
The drain electrode of thin film transistor (TFT) all is connected with pixel electrode in this pixel cell in each pixel cell;
Described array base palte also comprises passivation layer, and described passivation layer is arranged between public electrode and the pixel electrode.
9. according to each described array base palte among the claim 1-8, it is characterized in that,
Public electrode in each pixel cell is the gap electrode that comprises bending, and pixel electrode is plate electrode;
Perhaps, the pixel electrode in each pixel cell is the gap electrode that comprises bending, and public electrode is plate electrode;
Perhaps, the public electrode in each pixel cell and pixel electrode are the gap electrode that comprises bending.
10. a display device comprises each described array base palte as claim 1-9.
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| CN201310109495.7A CN103235452B (en) | 2013-03-29 | 2013-03-29 | A kind of array base palte and display device |
| PCT/CN2013/076956 WO2014153844A1 (en) | 2013-03-29 | 2013-06-07 | Array substrate and display device |
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| CN201310109495.7A CN103235452B (en) | 2013-03-29 | 2013-03-29 | A kind of array base palte and display device |
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| CN104267550A (en) * | 2014-10-14 | 2015-01-07 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN105116654A (en) * | 2015-08-10 | 2015-12-02 | 友达光电股份有限公司 | Pixel array, display panel and curved display panel |
| CN105182634A (en) * | 2015-09-18 | 2015-12-23 | 深超光电（深圳）有限公司 | Array substrate and liquid crystal display panel |
| CN106681064A (en) * | 2016-11-25 | 2017-05-17 | 厦门天马微电子有限公司 | Array baseplate and display panel |
| CN107490907A (en) * | 2016-06-13 | 2017-12-19 | 三星显示有限公司 | Liquid crystal display device |
| CN108351557A (en) * | 2015-10-30 | 2018-07-31 | 夏普株式会社 | Liquid crystal display panel |
| CN109116648A (en) * | 2014-07-03 | 2019-01-01 | 群创光电股份有限公司 | Have the conducting wire of differently curved degree and the liquid crystal display of light-shielding pattern |
| CN109188805A (en) * | 2018-09-14 | 2019-01-11 | 上海中航光电子有限公司 | Picture element array structure, display panel and display device |
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| CN109116648A (en) * | 2014-07-03 | 2019-01-01 | 群创光电股份有限公司 | Have the conducting wire of differently curved degree and the liquid crystal display of light-shielding pattern |
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| CN105182634B (en) * | 2015-09-18 | 2019-01-15 | 深超光电（深圳）有限公司 | array substrate and liquid crystal display panel |
| CN105182634A (en) * | 2015-09-18 | 2015-12-23 | 深超光电（深圳）有限公司 | Array substrate and liquid crystal display panel |
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| CN107490907A (en) * | 2016-06-13 | 2017-12-19 | 三星显示有限公司 | Liquid crystal display device |
| CN107490907B (en) * | 2016-06-13 | 2021-11-30 | 三星显示有限公司 | Liquid crystal display device having a plurality of pixel electrodes |
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| CN106681064B (en) * | 2016-11-25 | 2019-08-13 | 厦门天马微电子有限公司 | Array substrate and display panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2014153844A1 (en) | 2014-10-02 |
| CN103235452B (en) | 2016-06-08 |
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