CN103234673B - Pressure sensor micro-nano structure with high stability under high-temperature environment - Google Patents
Pressure sensor micro-nano structure with high stability under high-temperature environment Download PDFInfo
- Publication number
- CN103234673B CN103234673B CN201310151676.6A CN201310151676A CN103234673B CN 103234673 B CN103234673 B CN 103234673B CN 201310151676 A CN201310151676 A CN 201310151676A CN 103234673 B CN103234673 B CN 103234673B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- diaphragm
- silit
- carbide substrate
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a pressure sensor micro-nano structure with the high stability under a high-temperature environment. The pressure sensor micro-nano structure comprises a silicon carbide membrane sheet, a reflection membrane, a semi-reflection membrane, a bonding layer, a silicon carbide substrate, a packaging layer and a sapphire optical fiber, wherein the reflection membrane is plated in the middle of the silicon carbide membrane sheet; the semi-reflection membrane is plated at the tail end of the sapphire optical fiber; the bonding layer is located between the silicon carbide membrane sheet and the silicon carbide substrate; and the sapphire optical fiber is connected with the silicon carbide substrate through the packaging layer, and is used for transmitting an optical signal. The detection device disclosed by the invention is simple in structure and strong in anti-interference performance, and pressure detection under the high-temperature environment can be realized.
Description
Technical field
The present invention relates to a kind of pressure transducer micro-nano structure in high temperature environments with high stability, belong to aviation pressure transducer manufacturing technology field.
Background technology
Aero engine technology is described as modern industry " jewel on imperial crown ", is the important symbol of a national science and technology, industry, economy and military capability of the country.Aeromotor is the propulsion system with complicated aerodynamic force, heating power and structure, and its performance quality affects the performance of aircraft.Along with aeromotor develops to high supercharging pressure level, high turbine inlet temperature (TIT), high thrust-weight ratio and high reliability, under condition complicated and changeable, measure engine high-temperature district dynamic pressure in transient process and flow field characteristic and grasp its Changing Pattern, for realizing engine control and adjustment is extremely important.Now general detection mode is indirect inspection, exactly pressure transducer is arranged in position, low-temperature space, but this detection mode can cause will reduce Pressure behaviour monitoring sensitivity.But Direct Inspection Technology proposes very harsh requirement to sensor, it needs while bearing hyperthermal environments, to possess stable measuring accuracy (higher than 800 DEG C, precision is better than ± 2%FS to working temperature).The mainly silicon diffused piezoresistive pressure sensor that current commercialization uses, its technical maturity and excellent performance, but it limits by P-N junction heatproof, pressure survey can only be carried out below 120 DEG C, during more than 120 DEG C, so that lost efficacy, can there is plastic yield and current leakage in the performance meeting severe exacerbation of sensor 600 DEG C time, cause the extreme of signal processing system and circuit to be lacked of proper care, far can not meet following aeromotor hyperthermal environments downforce and detect.
Summary of the invention
(1) object:
In order to overcome the deficiency that existing aeromotor pressure transducer works under hyperthermal environments, the object of the present invention is to provide a kind of sensor micro-nano structure that can realize in high temperature environments pressure detection.This sensor has high stability simultaneously in high temperature environments.
(2) technical scheme
For achieving the above object, technical scheme of the present invention realizes as follows:
A kind of pressure transducer micro-nano structure in high temperature environments with high stability of the present invention, it is characterized in that, it comprises: silit diaphragm, reflectance coating, half reflection film, bonded layer, silicon carbide substrate, encapsulated layer and sapphire fiber; Annexation between them is: reflectance coating is plated in the middle part of silit diaphragm, half reflection film is plated in sapphire fiber end, bonded layer is between silit diaphragm and silicon carbide substrate, and sapphire fiber is connected with silicon carbide substrate by encapsulated layer, for transmitting optical signal.
Described silit diaphragm is thin rounded flakes, can cause the distortion of diaphragm when external influence one pressure;
Described reflectance coating, is plated in the upper position of silit diaphragm, strengthens light reflectance;
Described half reflection film, is plated in sapphire fiber end, strengthens the interference effect of light;
Described bonded layer is silicon dioxide material, and silit diaphragm and silicon carbide substrate are bonded together;
Described silicon carbide substrate is thin rounded flakes, processes cavity and fiber orientation hole thereon respectively;
Described encapsulated layer is refractory ceramics glue, for the encapsulation of sapphire fiber and silicon carbide substrate;
Described sapphire fiber, is connected with silicon carbide substrate, for transmitting optical signal.
Wherein, the thickness of silit diaphragm is 5 microns, and diameter is 1 millimeter;
Wherein, silicon carbide-based plate thickness is 350 microns, and the cavity depth that silicon carbide substrate is arranged and diameter are respectively 20 microns and 500 microns, and fiber orientation bore dia is 150 microns;
Wherein, reflectance coating thickness is 200 nanometers;
Wherein, sapphire fiber diameter is 125 microns.
(3) advantage and effect
The present invention has following beneficial effect:
1, sensor device main part provided by the invention is formed by silit Direct Bonding, and end portion is completed by single sapphire bare fibre and silit air-tight packaging, and this device can be implemented under hot environment pressure detection;
2, sensor device cavity body structure provided by the invention is all made up of silit, each several part has identical thermal expansivity and heat-conduction coefficient, when bonded layer is silicon dioxide material, simultaneously by optimizing bonded layer thickness, form temperature deformation self-compensating structure cavity, this device has low temperature drift characteristic;
3, structure of the detecting device provided by the invention is simple, antijamming capability is strong.
Accompanying drawing explanation
Fig. 1 is a kind of pressure transducer micro-nano structure schematic diagram in high temperature environments with high stability in the present invention.
In figure, symbol description is as follows:
1, silit diaphragm; 2, reflectance coating; 3, half reflection film; 4, bonded layer; 5, silicon carbide substrate; 6, encapsulated layer; 7, sapphire fiber.
Embodiment
See Fig. 1, a kind of pressure transducer micro-nano structure in high temperature environments with high stability of the present invention, it comprises: silit diaphragm 1, reflectance coating 2, half reflection film 3, bonded layer 4, silicon carbide substrate 5, encapsulated layer 6 and sapphire fiber 7; Position annexation between them is: reflectance coating 2 is plated in the middle part of silit diaphragm 1, half reflection film 3 is plated in sapphire fiber 7 end, bonded layer 4 is between silit diaphragm 1 and silicon carbide substrate 5, and sapphire fiber 7 is connected with silicon carbide substrate 5, for transmitting optical signal by encapsulated layer 6.
Described silit diaphragm 1 is thin rounded flakes, can cause the distortion of diaphragm, for perception ambient pressure when external influence one pressure; Silit diaphragm 1 thickness is 5 microns, and diameter is 1 millimeter; By utilizing CVD(chemical vapor deposition on the monosilicon) epitaxial growth obtains;
Described reflectance coating 2, is plated on silit diaphragm 1, and for strengthening light reflectance, thickness is 200 nanometers;
Described half reflection film 3, is plated in sapphire fiber 7 end, by changing transmitance and the reflectivity of light signal, strengthens the interference effect of light;
Described bonded layer 4 is silicon dioxide material, and silit diaphragm 1 and silicon carbide substrate 5 are bonded together; By controlling the thickness of bonded layer 4, cavity is made to have temperature deformation self-compensating function;
Described silicon carbide substrate 5, for thin rounded flakes, thickness is 350 microns, wavelength is utilized to be that the ultraviolet laser of 355 nanometers processes cavity and fiber orientation hole thereon respectively, adding man-hour laser average power is 1W(watt), cavity depth and diameter are respectively 20 microns and 500 microns, and fiber orientation bore dia is 150 microns;
Described encapsulated layer 6, for the encapsulation of optical fiber 7 and silicon carbide substrate 5, material is refractory ceramics glue;
Described sapphire fiber 7, for removing the bare fibre of coat, diameter is 125 microns, is connected, for transmitting optical signal with silicon carbide substrate 5; Optical fiber head is obtained by optical fiber cutter cutting, can ensure the flatness of optical fiber head.
Principle of work of the present invention:
This sensor is made based on Fabry-Perot interference principle, forming method Fabry-Perot interference chamber in silicon carbide substrate, and two folded light beams come from optical fiber 7 end face and silit diaphragm 1 inside surface respectively, form interference fringe in a fiber.If chamber is L deeply, when when silit diaphragm 1 outside surface applied pressure, can deformation be there is in diaphragm, can cause the dark L in chamber that a small change occurs like this, cause the change in optical path length of wherein a branch of reflected light, then cause the change of interference signal, the change of interference signal by measuring light intensity change or the change of interference light crest, can realize the measurement to pressure thus.
Claims (1)
1. there is a pressure transducer micro-nano structure for high stability in high temperature environments, it is characterized in that: it comprises: silit diaphragm, reflectance coating, half reflection film, bonded layer, silicon carbide substrate, encapsulated layer and sapphire fiber; Position annexation between them is: reflectance coating is plated in the middle part of silit diaphragm, half reflection film is plated in sapphire fiber end, bonded layer is between silit diaphragm and silicon carbide substrate, and sapphire fiber is connected with silicon carbide substrate by encapsulated layer, for transmitting optical signal;
Described silit diaphragm is thin rounded flakes, can cause the distortion of diaphragm, for perception ambient pressure when external influence one pressure; Silit diaphragm thickness is 5 microns, and diameter is 1 millimeter; Obtain by utilizing chemical vapor deposition CVD epitaxial growth on the monosilicon;
Described reflectance coating, is plated on silit diaphragm, and for strengthening light reflectance, thickness is 200 nanometers;
Described half reflection film, is plated in sapphire fiber end, by changing transmitance and the reflectivity of light signal, strengthens the interference effect of light;
Described bonded layer is silicon dioxide material, and silit diaphragm and silicon carbide substrate are bonded together; By controlling the thickness of bonded layer, cavity is made to have temperature deformation self-compensating function;
Described silicon carbide substrate, for thin rounded flakes, thickness is 350 microns, wavelength is utilized to be that the ultraviolet laser of 355 nanometers processes cavity and fiber orientation hole thereon respectively, adding man-hour laser average power is 1W, cavity depth and diameter are respectively 20 microns and 500 microns, and fiber orientation bore dia is 150 microns;
Described encapsulated layer, for the encapsulation of optical fiber and silicon carbide substrate, material is refractory ceramics glue;
Described sapphire fiber, for removing the bare fibre of coat, diameter is 125 microns, is connected with silicon carbide substrate, for transmitting optical signal; Optical fiber head is obtained by optical fiber cutter cutting, can ensure the flatness of optical fiber head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310151676.6A CN103234673B (en) | 2013-04-27 | 2013-04-27 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310151676.6A CN103234673B (en) | 2013-04-27 | 2013-04-27 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103234673A CN103234673A (en) | 2013-08-07 |
| CN103234673B true CN103234673B (en) | 2015-01-07 |
Family
ID=48882724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310151676.6A Active CN103234673B (en) | 2013-04-27 | 2013-04-27 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103234673B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103991840B (en) * | 2014-05-21 | 2016-01-13 | 北京遥测技术研究所 | A kind of for the SiC absolute pressure chamber preparation method under hyperthermal environments |
| CN104596685B (en) * | 2014-12-04 | 2017-05-10 | 刘玉珏 | MEMS process based miniature packaged F-P pressure sensor and forming method |
| CN104502016B (en) * | 2014-12-04 | 2017-06-09 | 刘玉珏 | A kind of chamber based on MEMS technology adjustable F P pressure sensors long and forming method |
| CN105004884B (en) * | 2015-07-03 | 2018-12-28 | 北京航空航天大学 | A kind of SiC base micro-optics high temperature accelerometer and its design method |
| CN106323516B (en) * | 2015-07-10 | 2022-04-22 | 成都凯天电子股份有限公司 | F-P pressure sensor with composite medium film |
| CN105067184A (en) * | 2015-08-08 | 2015-11-18 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| CN105236350B (en) * | 2015-10-21 | 2017-06-20 | 中国电子科技集团公司第四十九研究所 | A kind of wafer level Direct Bonding method of sapphire pressure sensitive chip |
| CN105606277A (en) * | 2016-02-23 | 2016-05-25 | 成都凯天电子股份有限公司 | Integrated fiber F-P chamber pressure sensor |
| CN106441657A (en) * | 2016-09-20 | 2017-02-22 | 西北工业大学 | Silicon-carbide-based high-temperature pressure sensor on the basis of Fabry-Perot cavity and preparation method of sensor |
| CN109870255B (en) * | 2017-12-05 | 2023-09-12 | 北京佰为深科技发展有限公司 | Fabry-Perot sensor and manufacturing method thereof |
| CN108444623A (en) * | 2018-04-25 | 2018-08-24 | 北京东方锐择科技有限公司 | High sensibility pressure transducer and preparation method thereof based on silicon thin film |
| CN108760148B (en) * | 2018-07-20 | 2020-04-10 | 北京航空航天大学 | Absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor |
| CN110146203A (en) * | 2018-12-11 | 2019-08-20 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of encapsulating structure and packaging method of fibre optic compression sensor resistant to high temperature |
| CN111473896A (en) * | 2020-05-26 | 2020-07-31 | 中山大学 | Optical fiber pressure sensor based on flexible silicon diaphragm and detection method thereof |
| CN113340492A (en) * | 2021-07-07 | 2021-09-03 | 中北大学 | Batch preparation method of optical fiber Fabry-Perot pressure sensor and sensitive unit thereof |
| CN113607262B (en) * | 2021-08-04 | 2024-08-06 | 中北大学 | High-temperature-resistant sapphire-based grating noise in-situ sensor |
| CN118225306A (en) * | 2024-05-23 | 2024-06-21 | 成都凯天电子股份有限公司 | MEMS high-temperature pressure sensor and preparation method of sensor chip |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101709638B (en) * | 2009-11-24 | 2012-09-26 | 山东省科学院激光研究所 | Novel optical fiber temperature and pressure sensor |
| CN102384809B (en) * | 2011-08-09 | 2013-05-08 | 天津大学 | High-stability optical fiber Fabry-Perot pressure sensor packaged without glue and manufacturing method |
| CN102721492B (en) * | 2012-05-31 | 2014-04-02 | 天津大学 | Optical fiber Fabry-Perot pressure sensor with fiber bragg grating temperature compensation and making method thereof |
-
2013
- 2013-04-27 CN CN201310151676.6A patent/CN103234673B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103234673A (en) | 2013-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103234673B (en) | Pressure sensor micro-nano structure with high stability under high-temperature environment | |
| CN101832832B (en) | Optical fiber Fabry-Perot pressure sensor and production method thereof | |
| CN100516782C (en) | Hollow photon crystal optical fiber based Fabry-perot interferometer sensor and its production method | |
| CN108896232B (en) | Optical fiber type ultra-high temperature pressure sensor with temperature compensation function | |
| CN108760148B (en) | Absolute pressure type optical fiber Fabry-Perot silicon carbide high-temperature resistant aviation pressure sensor | |
| CN108572047B (en) | Optical fiber air pressure sensing device based on multiple Fabry-Perot microcavities | |
| CN102889901B (en) | Fabry-Perot optical fiber sensor and fabrication method of sensor | |
| CN100526819C (en) | Apparatus for measuring libration by optical fibre and measuring method | |
| CN104596435B (en) | A kind of long adjustable optic fibre F P strain gauges of chamber based on MEMS technology and forming method | |
| CN106643901B (en) | Superhigh temperature fiber F-P temperature and pressure compound sensor and system | |
| CN104501729B (en) | A kind of fiber F-P strain gauge and forming method based on MEMS technology | |
| CN110631616B (en) | Ultra-temperature miniature optical fiber EFPI strain sensor | |
| CN105067184A (en) | High-temperature pressure sensor and manufacturing method thereof | |
| CN107664548A (en) | A kind of EFPI fibre optic compression sensors and preparation method thereof | |
| CN111256808A (en) | Optical fiber micro-opto-electro-mechanical system ultrasonic sensor with composite membrane structure and manufacturing method thereof | |
| CN105222883A (en) | Diaphragm manifold type extrinsic Fiber Optic Sensor FP sensor probe | |
| CN106197782B (en) | Miniature extrinsic Fabry-perot optical fiber pressure sensor | |
| CN102353441A (en) | Small-sized adaptive optical-fiber ultrasonic sensor | |
| US11448558B2 (en) | Michelson interference optical fiber temperature sensor for detecting contrast change of fringes | |
| CN114486019B (en) | Optical fiber Fabry-Perot pressure sensor for eliminating interference of third cavity and MEMS manufacturing method | |
| CN110617901A (en) | Sapphire optical fiber F-P high-temperature sensor with inclined reflection surface, preparation method and temperature sensing system | |
| CN212206125U (en) | Temperature compensation type optical fiber Fabry-Perot high-temperature pressure sensor | |
| CN103954383A (en) | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof | |
| CN202748041U (en) | Optical fiber Fabry-Perot sensor | |
| CN205066926U (en) | Extrinsic optic fibre fabry perot sensor probe of diaphragm manifold type |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |