CN105236350B - A kind of wafer level Direct Bonding method of sapphire pressure sensitive chip - Google Patents
A kind of wafer level Direct Bonding method of sapphire pressure sensitive chip Download PDFInfo
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- CN105236350B CN105236350B CN201510689597.XA CN201510689597A CN105236350B CN 105236350 B CN105236350 B CN 105236350B CN 201510689597 A CN201510689597 A CN 201510689597A CN 105236350 B CN105236350 B CN 105236350B
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- sapphire
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 150
- 239000010980 sapphire Substances 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000005855 radiation Effects 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 9
- 239000010431 corundum Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000003698 laser cutting Methods 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010437 gem Substances 0.000 description 4
- 229910001751 gemstone Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009131 signaling function Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Pressure Sensors (AREA)
Abstract
A kind of Direct Bonding method of sapphire pressure sensitive chip, the invention belongs to MEMS technology technical field, it in order to solve the Direct Bonding that existing process is difficult to sapphire wafer in sapphire pressure sensitive structure, and the pressure sensor for preparing the relatively low problem of operating temperature.Direct Bonding method：First, cavity is etched to a piece of sapphire wafer, then carries out pre- scribing；2nd, two panels sapphire wafer is placed in dilute sulfuric acid and forms hydroxyl layer；3rd, two panels sapphire wafer alignment is stacked and carries out pre- bonding；4th, high temperature bonding is carried out to the pre- sapphire wafer being bonded continuous heating at a temperature of 1150~1350 DEG C；5th, make annealing treatment；6th, chip is cut into.The present invention uses two kinds of mode of heatings of heat radiation and warm table in Direct Bonding, and bonding success rate is lifted by way of pre- scribing, does not use adhesive or intermediate layer in the structure of the sapphire pressure sensitive chip, and operating temperature can reach 1500 DEG C or so.
Description
Technical field
The invention belongs to MEMS technology technical field, and in particular to a kind of Direct Bonding side of sapphire wafer (wafer level)
Method.
Background technology
The operating temperature of traditional semiconductor pressure sensor is general below 600 DEG C, wherein, SiC pressure drag type pressures are passed
600 DEG C of the maximum operating temperature of sensor, the maximum operating temperature of SOI pressure sensors below 500 DEG C, silicon-on-sapphire pressure
350 DEG C of the maximum operating temperature of sensor.Electricity formula pressure sensor is dfficult to apply in temperature environment higher.
At present, foreign countries occur in that the fibre optic compression sensor product based on sapphire chip, such as Britain Oxsensis companies
Wave-Phire DPT950 type fibre optic compression sensors, maximum operating temperature can reach 600 DEG C, and probe can reach foremost
1000℃.And the country does not report the achievement in research of the fibre optic compression sensor based on sapphire chip also.Chinese patent literature
CN103234673 discloses a kind of resistant to elevated temperatures pressure sensor micro-nano structure, and it includes：Carborundum diaphragm, reflectance coating, half are instead
Penetrate film, bonded layer, silicon carbide substrate, encapsulated layer and sapphire fiber；Reflectance coating is plated in carborundum diaphragm middle part, semi-reflective film plating
In sapphire fiber end, bonded layer (silica) is located between carborundum diaphragm and silicon carbide substrate, and sapphire fiber leads to
Encapsulated layer (refractory ceramics glue) is crossed to be connected with silicon carbide substrate.The preparation technology of above-mentioned pressure sensor is to use to be plated in carborundum
Reflectance coating on diaphragm forms Fabry-Perot interference chamber with the semi-reflective film being plated on sapphire fiber end, realizes high temperature
Pressure detecting under environment.
At present, domestic sapphire wafer (wafer level) Direct Bonding technique does not have also so far also in theoretical research stage
There is sapphire wafer (wafer level) Direct Bonding technology of maturation.And the country is typically directed to silicon in terms of Wafer level bonding
Sill, for example, silicon-silicon bond conjunction, silicon-glass anodic bonding etc..
The content of the invention
It is blue precious the invention aims to solve wafer level during existing process is difficult to sapphire pressure sensitive structure
The Direct Bonding of stone chip, and the pressure sensor for preparing the relatively low problem of operating temperature, and provide a kind of blue precious
The wafer level Direct Bonding method of stone presser sensor chip.
The Direct Bonding method of sapphire pressure sensitive chip of the present invention is realized according to the following steps：
First, sapphire wafer B is etched into cavity, sapphire wafer B is entered using machine cuts or laser cutting then
The pre- scribing of row, the sapphire wafer B for being etched；
2nd, the sapphire wafer B of sapphire wafer A and etching is sequentially passed through into RCA cleanings and deionized water is cleaned by ultrasonic,
Then concentration is placed in after concentrated phosphoric acid corrosion treatment to form hydroxyl layer in 0.5~1mol/L dilute sulfuric acids, deionized water is used
Hydrophilic pretreated sapphire wafer A and sapphire wafer B is obtained after flushing；
3rd, hydrophilic pretreated sapphire wafer A and sapphire wafer B alignments are stacked, being put into bonder is carried out
Pre- bonding, obtains the sapphire wafer of pre- bonding；
4th, the sapphire wafer of pre- bonding is placed in high-temperature clamp and is fixed, be then placed within the true of Direct Bonding device
In empty room, radiation shield is provided with the inwall of vacuum chamber, the upper surface of vacuum chamber base plate is provided with warm table, clamping has pre-
The high-temperature clamp of the sapphire wafer of bonding is placed on warm table, and continuous heating 40~60 is small at a temperature of 1150~1350 DEG C
Shi Jinhang high temperature is bonded, the sapphire wafer after being bonded；
5th, the sapphire wafer after the bonding for obtaining step 4 is placed into Direct Bonding device with 1150~1250 DEG C
Temperature made annealing treatment, the sapphire wafer after being annealed；
6th, the sapphire wafer after annealing is cut into chip according to the figure of step one pre- scribing, in sapphire chip A
Vacuum chamber is formed between sapphire chip B, sapphire pressure sensitive chip is obtained.
Sapphire wafer (wafer level) Direct Bonding device of the present invention has two kinds of mode of heatings, and a kind of mode of heating is heat
Radiant type heat, using radiation shield heat radiation type heat, be capable of achieving large volume of uniform temperature zone (>=1200 DEG C), power consumption compared with
Greatly；Another mode of heating is conduction-type heating, is heated using the thermal conductivity of warm table, is capable of achieving the uniform temperature zone of smaller size smaller
(>=1200 DEG C), power consumption is smaller.
Sapphire wafer (wafer level) Direct Bonding process of the present invention, for double throwings sapphire wafer (wafer level)
The parameters such as roughness, general thickness deviation, local thickness's deviation, angularity, flexibility are larger and are difficult to Direct Bonding
(not using adhesive or intermediate layer of material), and small between eliminating two panels sapphire wafer by the way of the pre- scribing
Gap, lifting bonding success rate.After sapphire wafer (wafer level) bonding is completed, the figure according still further to pre- scribing is cut
Scribing.
Sapphire fusing point more than 2000 DEG C, and with splendid anticorrosion properties, so becoming high temperature and severe
Ideal material in terms of environmentally sensitive.A kind of sapphire wafer (wafer level) Direct Bonding process proposed by the present invention, profit
With sapphire wafer Direct Bonding device realize sapphire wafer (wafer level) Direct Bonding and sapphire chip it is straight
Connect bonding.Due to not using adhesive or intermediate layer of material in the structure of the sapphire pressure sensitive chip for obtaining, it is entirely
Monocrystalline sapphire material, therefore the pressure sensor based on sapphire chip can be operated in exceedingly odious, hot environment, work
1500 DEG C or so are can reach as temperature.
Brief description of the drawings
Fig. 1 is the structural representation of vacuum chamber in Direct Bonding device described in the step 4 of specific embodiment one；
Fig. 2 is the pre- scribing figure of sapphire wafer B3-2 (wafer level has etching cavity) in embodiment one；
Fig. 3 is the structural representation of high-temperature clamp；
Fig. 4 is the structural representation of sapphire pressure sensitive chip；
Fig. 5 is clamping structure schematic diagram of the embodiment two to single sapphire pressure sensitive chip Direct Bonding.
Specific embodiment
Specific embodiment one：The Direct Bonding method of present embodiment sapphire pressure sensitive chip is real according to the following steps
Apply：
First, sapphire wafer B3-2 is etched into cavity, then using machine cuts or laser cutting to sapphire wafer
B3-2 carries out pre- scribing, the sapphire wafer B3-2 for being etched；
2nd, the sapphire wafer B3-2 of sapphire wafer A3-1 and etching is sequentially passed through into RCA cleanings and deionized water surpasses
Sound is cleaned, and concentration is then placed in after concentrated phosphoric acid corrosion treatment to form hydroxyl layer in 0.5~1mol/L dilute sulfuric acids, is spent
Ionized water obtains hydrophilic pretreated sapphire wafer A3-1 and sapphire wafer B3-2 after rinsing；
3rd, hydrophilic pretreated sapphire wafer A3-1 and sapphire wafer B3-2 alignments are stacked, is put into bonder
In carry out pre- bonding, obtain the sapphire wafer 3 of pre- bonding；
4th, the sapphire wafer 3 of pre- bonding is placed in high-temperature clamp and is fixed, be then placed within the true of Direct Bonding device
In empty room, radiation shield 1 is provided with the inwall of vacuum chamber, the upper surface of vacuum chamber base plate is provided with warm table 2, clamping has
The high-temperature clamp of the sapphire wafer 3 of pre- bonding is placed on warm table 2, at a temperature of 1150~1350 DEG C continuous heating 40~
Carry out high temperature bonding within 60 hours, the sapphire wafer 3 after being bonded；
5th, the sapphire wafer 3 after the bonding for obtaining step 4 is placed into Direct Bonding device with 1150~1250
DEG C temperature made annealing treatment, the sapphire wafer 3 after being annealed；
6th, the sapphire wafer 3 after annealing is cut into chip according to the figure of step one pre- scribing, in sapphire chip
Vacuum chamber 8 is formed between A7-1 and sapphire chip B7-2, sapphire pressure sensitive chip 7 is obtained.
Present embodiment step 4 sapphire wafer (wafer level) Direct Bonding device has two heater elements.One adds
Thermal device is radiation shield 1, and the outer surface of radiation shield 1 is vacuum chamber housing, whole true in the inner surface of radiation shield 1 parcel bonding apparatus
Absolutely empty, whole heating are carried out to vacuum space；Another heater element is warm table 2, and the center in vacuum space is only right
The center of vacuum space carries out local heating.
Present embodiment is used to make the sapphire pressure sensitive structure of High Temperature Fiber Optic Pressure Sensor, and its principle is blue precious
Stone chip A7-1 is used with the sapphire chip B7-2 with cavity and is bonded together to form presser sensor structure (see Fig. 4), due to blue precious
Stone material has excellent optical property, blue when the light of Optical Fiber Transmission incides presser sensor chamber through sapphire chip B7-2
The lower surface of jewel chip A7-1 forms Fabry-Perot interference chamber and realizes high temperature ring with the cavity face of sapphire chip B7-2
Pressure detecting under border.The present embodiment optical property excellent because sapphire material has, sapphire surface need not be plated
Reflectance coating；Sapphire chip A7-1 passes through Direct Bonding with the sapphire chip B7-2 with cavity, it is not necessary to intermediate bonding layer.
The vacuum chamber 8 that sapphire chip A7-1 is bonded together to form with the sapphire chip B7-2 with cavity, it is possible to reduce if being pressed under high temperature
Influence during the power sensitive structure certain gas of encapsulation to pressure detecting.Optical fiber only plays transmission light signal function, is not involved in forming method
Fabry-Perot interference chamber, reduces fibre-optic package difficulty.The sapphire pressure sensitive structure 7 that present embodiment makes is using same
Kind of material, simple structure, it is to avoid the stress mismatch problem of different materials under hot environment.
Specific embodiment two：The figure that present embodiment is cut from the pre- cutting-up of step one unlike specific embodiment party one is
Zhou duicheng tuxing or centrosymmetric image.Other steps and parameter are identical with specific embodiment one.
Specific embodiment three：The figure that present embodiment is cut from the pre- cutting-up of step one unlike specific embodiment party two is
Circular, oval, square or rectangle.Other steps and parameter are identical with specific embodiment two.
Specific embodiment four：Step one is using dry unlike one of present embodiment and specific embodiment one to three
Method or wet etching go out cavity.Other steps and parameter are identical with one of specific embodiment one to three.
Specific embodiment five：Described in step one unlike one of present embodiment and specific embodiment one to four
The depth of cavity be 1 μm~300 μm between, between a diameter of 1mm~10mm of cavity.Other steps and parameter and specific implementation
One of mode one to four is identical.
Specific embodiment six：Described in step 4 unlike one of present embodiment and specific embodiment one to five
High-temperature clamp is made up of corundum disk 4, corundum cylinder 5 and zirconium oxide disk 6, and the upper surface of corundum disk 4 is provided with corundum
Cylinder 5, the sapphire wafer 3 of pre- bonding is placed in corundum cylinder 5, is stamped in the upper surface of the sapphire wafer 3 of pre- bonding
Multiple zirconium oxide disks 6.Other steps and parameter are identical with one of specific embodiment one to five.
Embodiment one：The Direct Bonding method of the present embodiment sapphire pressure sensitive chip is implemented according to the following steps：
First, then thickness is adopted for the sapphire wafer B 3-2 of 0.4mm etch diameter of phi 5mm, 50 μm of cavitys of depth
Pre- scribing is carried out to sapphire wafer B3-2 with laser cutting, pre- cutting-up is cut into the square of 10 × 10mm, 10 μm of depth of cut,
The sapphire wafer B3-2 for being etched；
2nd, by thickness for the sapphire wafer A3-1 of 0.4mm and the sapphire wafer B3-2 of etching sequentially pass through RCA cleanings
It is cleaned by ultrasonic with deionized water, being then placed in concentration after the concentrated phosphoric acid corrosion treatment that mass concentration is 85% is
In 0.5mol/L dilute sulfuric acids formed hydroxyl layer, with obtained after deionized water rinsing hydrophilic pretreated sapphire wafer A3-1 and
Sapphire wafer B3-2；
3rd, hydrophilic pretreated sapphire wafer A3-1 and sapphire wafer B3-2 alignments are stacked, is put into bonder
In pressure be 2kN, temperature be 200 DEG C under conditions of carry out pre- bonding 1h, obtain the sapphire wafer 3 of pre- bonding；
4th, the sapphire wafer 3 of pre- bonding is placed in high-temperature clamp and is fixed, be then placed within the true of Direct Bonding device
In empty room, radiation shield 1 is provided with the inwall of vacuum chamber, the upper surface of vacuum chamber base plate is provided with warm table 2, clamping has
The high-temperature clamp of the sapphire 3 of pre- bonding is placed on warm table 2, is that 10N, temperature are 1200 DEG C of (vacuum chamber environment temperature in pressure
Degree) under conditions of continuous heating carry out high temperature bonding within 50 hours, the sapphire wafer 3 after being bonded；
5th, the sapphire wafer 3 after the bonding for obtaining step 4 is placed into Direct Bonding device with 1200 DEG C of temperature
Degree carries out annealing 10h, the sapphire wafer 3 after being annealed；
6th, the sapphire wafer 3 after annealing is cut into chip according to the figure of step one pre- scribing, in sapphire chip
Vacuum chamber 8 is formed between A7-1 and sapphire chip B7-2, sapphire pressure sensitive chip 7 is obtained.
The sapphire pressure sensitive chip that the present embodiment Direct Bonding is obtained is by sapphire chip A7-1 and sapphire chip
B7-2 Direct Bondings are formed, and cavity is etched with sapphire chip B7-2, and the sapphire chip A7-1 is by without etching
The wafer level sapphire wafer machine cuts or laser cutting of cavity are formed, and the sapphire chip B7-2 is that will have etching recessed
The wafer level sapphire wafer machine cuts or laser cutting in chamber are formed.The vacuum chamber 8 is to be bonded indigo plant under vacuum
Jewel chip A7-1 and sapphire chip B7-2 and the annular seal space that is formed.The sapphire pressure sensitive chip 7 that the present embodiment is obtained
Operating temperature can reach more than 1500 DEG C.
Embodiment two：The present embodiment is direct from unlike embodiment one to monolithic sapphire chip A7-1 and sapphire core
The direct high temperature bondings of piece B7-2.
The present embodiment is as shown in Figure 5 to the clamping structure schematic diagram of single sapphire pressure sensitive chip Direct Bonding.
Claims (5)
1. a kind of wafer level Direct Bonding method of sapphire pressure sensitive chip, it is characterised in that be to follow these steps to realize：
First, sapphire wafer B (3-2) is etched into cavity, then using machine cuts or laser cutting to sapphire wafer B
(3-2) carries out pre- scribing, the sapphire wafer B (3-2) for being etched；
2nd, the sapphire wafer B (3-2) of sapphire wafer A (3-1) and etching is sequentially passed through into RCA cleanings and deionized water surpasses
Sound is cleaned, and concentration is then placed in after concentrated phosphoric acid corrosion treatment to form hydroxyl layer in 0.5~1mol/L dilute sulfuric acids, is spent
Ionized water obtains hydrophilic pretreated sapphire wafer A (3-1) and sapphire wafer B (3-2) after rinsing；
3rd, hydrophilic pretreated sapphire wafer A (3-1) and sapphire wafer B (3-2) alignments are stacked, is put into bonder
In carry out pre- bonding, obtain the sapphire wafer (3) of pre- bonding；
4th, the sapphire wafer (3) of pre- bonding is placed in high-temperature clamp and is fixed, be then placed within the vacuum of Direct Bonding device
In room, radiation shield (1) is provided with the inwall of vacuum chamber, the upper surface of vacuum chamber base plate is provided with warm table (2), clamping
The high-temperature clamp for having the sapphire wafer (3) of pre- bonding is placed on warm table (2), is persistently added at a temperature of 1150~1350 DEG C
Heat carries out high temperature bonding in 40~60 hours, the sapphire wafer (3) after being bonded；
5th, the sapphire wafer (3) after the bonding for obtaining step 4 is placed into Direct Bonding device with 1150~1250 DEG C
Temperature made annealing treatment, the sapphire wafer (3) after being annealed；
6th, the sapphire wafer (3) after annealing is cut into chip according to the figure of step one pre- scribing, in sapphire chip A
Vacuum chamber (8) is formed between (7-1) and sapphire chip B (7-2), sapphire pressure sensitive chip (7) is obtained；
High-temperature clamp wherein described in step 4 is made up of corundum disk (4), corundum cylinder (5) and zirconium oxide disk (6), firm
The upper surface of beautiful disk (4) is provided with corundum cylinder (5), and the sapphire wafer (3) of pre- bonding is placed in corundum cylinder (5),
Multiple zirconium oxide disks (6) are stamped in the upper surface of the sapphire wafer (3) of pre- bonding.
2. a kind of wafer level Direct Bonding method of sapphire pressure sensitive chip according to claim 1, its feature exists
The figure cut in the pre- cutting-up of step one is zhou duicheng tuxing or centrosymmetric image.
3. a kind of wafer level Direct Bonding method of sapphire pressure sensitive chip according to claim 2, its feature exists
The figure cut in the pre- cutting-up of step one is circular, oval or rectangle.
4. a kind of wafer level Direct Bonding method of sapphire pressure sensitive chip according to claim 1, its feature exists
Cavity is gone out using dry or wet etch in step one.
5. a kind of wafer level Direct Bonding method of sapphire pressure sensitive chip according to claim 1, its feature exists
Between the depth of the cavity described in step one is for 1 μm~300 μm, between a diameter of 1mm~10mm of cavity.
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| US11764198B2 (en) | 2017-03-02 | 2023-09-19 | Ev Group E. Thallner Gmbh | Method and device for bonding of chips |
| CN110160570B (en) * | 2019-05-13 | 2021-07-20 | 上海大学 | Optical fiber sensor based on sapphire and optical fiber ferrule bonding and preparation method |
| CN112744781B (en) * | 2019-10-29 | 2024-07-09 | 中北大学 | Preparation method of magnesium oxide sealing cavity |
| CN115036225B (en) * | 2022-08-11 | 2022-11-15 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Ultra-high temperature vacuum bonding equipment for sapphire wafer bonding |
| CN115028141A (en) * | 2022-08-11 | 2022-09-09 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Sapphire wafer direct bonding method of sapphire pressure sensitive structure |
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| US7659182B2 (en) * | 2006-05-23 | 2010-02-09 | Vladimir Vaganov | Method of wafer-to-wafer bonding |
| CN101259951A (en) * | 2008-04-11 | 2008-09-10 | 东南大学 | Method for manufacturing wafer-stage glass micro-cavity |
| CN102544264B (en) * | 2012-01-19 | 2014-04-23 | 苏州锦元纳米科技有限公司 | Method for preparing nano pattern on sapphire substrate |
| CN103234673B (en) * | 2013-04-27 | 2015-01-07 | 北京航空航天大学 | Pressure sensor micro-nano structure with high stability under high-temperature environment |
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