CN109904064A - A method of improving carbonization Si direct bonding intensity - Google Patents
A method of improving carbonization Si direct bonding intensity Download PDFInfo
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- CN109904064A CN109904064A CN201910057428.2A CN201910057428A CN109904064A CN 109904064 A CN109904064 A CN 109904064A CN 201910057428 A CN201910057428 A CN 201910057428A CN 109904064 A CN109904064 A CN 109904064A
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Abstract
The present invention is a kind of method for improving carbonization Si direct bonding intensity, and this method comprises the following steps: chemically-mechanicapolish polishing to SiC wafer face to be bonded；Silicon carbide plate is cleaned using Piranha solution, RCA1&RCA2 standard solution；SiC wafer face surface to be bonded is pre-processed using hydrofluoric acid solution；The pre- bonding of silicon carbide plate is completed in a solution of hydrofluoric acid；The silicon carbide plate being bonded in advance is moved into progress high temperature and pressure bonding under vacuum environment, completes preparation.The present invention can effectively realize the high-intensitive Direct Bonding of silicon carbide wafer, and the promotion for silicon carbide MEMS device and related device encapsulation performance lays the foundation.
Description
Technical field
The present invention is a kind of method for improving carbonization Si direct bonding intensity, belongs to technical field of manufacturing semiconductors.
Background technique
As third generation semiconductor material with wide forbidden band SiC due to loose band gap, high breakdown field strength, high electron mobility
The features such as rate, high thermal conductivity, Flouride-resistani acid phesphatase, high-temperature stability and good mechanical property, is applied to high temperature, high frequency, high-power, light
Electronics and anti-radiation aspect have unique material advantage.In addition, the fusing point of SiC material is up to 2720 DEG C, it can be at 1000 DEG C
Stable mechanical property is kept at even higher temperature.There is higher hardness, breaking strength compared to conventional semiconductor material, and resistance to
It wears, is corrosion-resistant.In conclusion SiC material is the preferred material applied to extreme environment MEMS device.
Bonding chip (WaferBonding) is important process necessary to MEMS device manufactures, and two and half can be led
Body material wafers combine, to realize required correlation function structure.But the chemical stability based on SiC material, SiC are brilliant
There is the problems such as bonding is difficult, bond strength is low in the Direct Bonding of piece.Known silicon carbide bonding method is mainly intermediate medium
, however, there are middle dielectric layers for this method, under high temperature environment since thermal expansion coefficient is inconsistent, there is failure in layer bonding
Risk, and it is limited to the high-temperature stability of dielectric layer material, the exemplar after bonding can not play carbofrax material high-temperature stability
Advantage.Therefore, urgent need will develop a kind of carbonization Si direct bonding method, to play the high-temperature stability of carbofrax material,
It is set to be used widely in semicon industry as early as possible.
Summary of the invention
The present invention exactly designs that provide a kind of raising silicon carbide direct in view of the above-mentioned deficiencies in the prior art
The method of bond strength, the purpose is to assist SiC Direct Bonding by hydrofluoric acid chemistry, to realize the high-strength direct of SiC wafer
Connect bonding.
The purpose of the present invention is achieved through the following technical solutions:
The method that this kind improves carbonization Si direct bonding intensity, it is characterised in that: the step of this method is as follows:
Step 1: silicon carbide wafer face chemically mechanical polishing to be bonded；
Silicon carbide wafer face to be bonded is polished to surface roughness 0.5nm or less using chemically mechanical polishing；
Step 2: silicon carbide wafer face cleaning to be bonded；
Key is waited for silicon carbide wafer using ethyl alcohol, acetone, deionized water, Piranha solution, RCA1&RCA2 standard solution
Conjunction face is cleaned, removal surface particulate contamination object, organic pollutant and ionic contamination；
Step 3: silicon carbide wafer hydrofluoric acid surface preparation in face to be bonded；
Silicon carbide wafer face to be bonded is pre-processed using hydrofluoric acid solution, removes the primary oxygen in silicon carbide wafer surface
Change layer；
Step 4: being bonded in advance in hydrofluoric acid solution；
Two panels silicon carbide wafer is to be bonded in face of being connected together, it is put into hydrofluoric acid solution and completes the pre- of silicon carbide wafer
Bonding, in pre- bonding process, there are hydrofluoric acid solution layers between two panels silicon carbide wafer face to be bonded, by the sample after pre- bonding
Part integrally takes out, and is placed on the surface of thermal insulation panel；
Step 5: thermal insulation panel is placed in the warehouse of bonder, warehouse is vacuumized, when vacuumizing, vacuum degree is small
In 50Pa, then the storehouse interior space is carried out after being heated to 1100 DEG C~1300 DEG C, exemplar is integrally loaded perpendicular to bonding
The pressure in face, the pressure are 30MPa~50MPa, keep 3h or more, the bonding of two panels silicon carbide wafer are completed, then by warehouse
Back pressure is to standard atmospheric pressure.
Further, it is to the pressure hold time perpendicular to bonding face that exemplar integrally loads described in the step 5
3~5h.
It the characteristics of technical solution of the present invention and has the beneficial effect that
(1) present invention can effectively realize the high-intensitive Direct Bonding of SiC-SiC, and metal intermediate layer or reflux is not present
Other heterogeneous middle layers such as middle layer are eliminated and are generated due to SiC material and middle dielectric layer material thermal expansion coefficient mismatch
Using limitation；
(2) it is strong can to greatly increase bonding using the native oxide on hydrofluoric acid solution removal SiC wafer surface by the present invention
Degree makes the key formed between silicon carbide wafer have the bond strength greater than 20MPa；
(3) present invention is bonded in advance in a solution of hydrofluoric acid, and hydrofluoric acid solution layer existing for bonded interface can be effective
It avoids face to be bonded from further aoxidizing and guarantees face pollution to be bonded, which passes through in subsequent vacuum
Molecular pump is discharged and is handled.
Specific embodiment
Technical solution of the present invention is further described below with reference to embodiment:
The step of carrying out carbonization Si direct bonding using the method for the present invention is as follows:
Step 1: silicon carbide wafer face chemically mechanical polishing to be bonded；
Silicon carbide wafer face to be bonded is polished to surface roughness 0.5nm or less using chemical-mechanical polishing mathing；
Step 2: silicon carbide wafer face cleaning to be bonded；
It is utilized respectively ethyl alcohol, acetone and 5min is cleaned by ultrasonic to exemplar, remove the impurity and oxide layer on surface；Use deionized water
Rinse exemplar acetone soln remained on surface；Then sample surface is cleaned with Piranha solution, removes the organic of surface
Pollutant is cleaning silicon carbide wafer face to be bonded with RCA1&RCA2 standard solution, removal surface particulate contamination object,
Organic pollutant and ionic contamination；It is finally rinsed well again with deionized water to be bonded.
Step 3: silicon carbide wafer hydrofluoric acid surface preparation in face to be bonded；
Pretreatment 10min is carried out to silicon carbide wafer face to be bonded using the hydrofluoric acid solution that volume fraction is 10%, is gone
Except silicon carbide wafer surface native oxide；
Step 4: being bonded in advance in hydrofluoric acid solution；
Two panels silicon carbide wafer face to be bonded is stacked together, completes the pre- key of silicon carbide wafer in a solution of hydrofluoric acid
It closes, in pre- bonding process, there are hydrofluoric acid solution layer between two panels silicon carbide wafer face to be bonded, hydrofluoric acid will flood completely
Exemplar after pre- bonding is integrally taken out, is placed on the surface of thermal insulation panel by silicon carbide wafer；
Step 5: being placed on thermal insulation panel from grinding in the warehouse of bonder, using included pumped vacuum systems to warehouse
It vacuumizes, when vacuumizing, vacuum degree is less than 50Pa, is then added using the heating system that bonder carries to the storehouse interior space
Heat integrally loads the pressure perpendicular to bonding face to exemplar using the compression system that bonder carries to after 1100 DEG C~1300 DEG C
Power, the pressure are 30MPa~50MPa, keep 3~5h, complete the bonding of two panels silicon carbide wafer, then by warehouse back pressure to mark
Quasi- atmospheric pressure.
Compared with prior art, technical solution of the present invention realizes the high-intensitive Direct Bonding of silicon carbide wafer, average key
Conjunction intensity is 22.78MPa, is improved about than the existing average bond strength 17.04MPa based on native oxide bonding method
33.7%, the promotion for silicon carbide MEMS device and related device encapsulation performance lays the foundation.
Claims (2)
1. a kind of method for improving carbonization Si direct bonding intensity, it is characterised in that: the step of this method is as follows:
Step 1: silicon carbide wafer face chemically mechanical polishing to be bonded；
Step 2: silicon carbide wafer face cleaning to be bonded；
Step 3: silicon carbide wafer hydrofluoric acid surface preparation in face to be bonded；
Silicon carbide wafer face to be bonded is pre-processed using hydrofluoric acid solution, removes the primary oxidation in silicon carbide wafer surface
Layer；
Step 4: being bonded in advance in hydrofluoric acid solution；
Two panels silicon carbide wafer is to be bonded in face of being connected together, it is put into the pre- key that silicon carbide wafer is completed in hydrofluoric acid solution
It closes, in pre- bonding process, there are hydrofluoric acid solution layers between two panels silicon carbide wafer face to be bonded, by the exemplar after pre- bonding
It is whole to take out, it is placed on the surface of thermal insulation panel；
Step 5: thermal insulation panel is placed in the warehouse of bonder, warehouse is vacuumized, when vacuumizing, vacuum degree is less than
Then 50Pa carries out after being heated to 1100 DEG C~1300 DEG C the storehouse interior space, integrally loads exemplar perpendicular to bonding face
Pressure, the pressure be 30MPa~50MPa, keep 3h or more, complete two panels silicon carbide wafer bonding, then by warehouse return
It is depressed into standard atmospheric pressure.
2. the method according to claim 1 for improving carbonization Si direct bonding intensity, it is characterised in that: in the step 5
The pressure hold time perpendicular to bonding face integrally loaded to exemplar is 3~5h.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883416A (en) * | 2020-07-17 | 2020-11-03 | 河北同光科技发展有限公司 | Surface protection method for silicon carbide wafer after chemical mechanical polishing |
| CN113284839A (en) * | 2021-05-21 | 2021-08-20 | 中国科学院上海微系统与信息技术研究所 | Heterogeneous bonding method and heterogeneous structure of diamond crystals |
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| CN1624921A (en) * | 2003-10-29 | 2005-06-08 | 国际商业机器公司 | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
| CN108288582A (en) * | 2018-01-11 | 2018-07-17 | 北京华碳科技有限责任公司 | A kind of wafer scale GaN device substrate transfer method |
| CN108760148A (en) * | 2018-07-20 | 2018-11-06 | 北京航空航天大学 | A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor |
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2019
- 2019-01-21 CN CN201910057428.2A patent/CN109904064A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1624921A (en) * | 2003-10-29 | 2005-06-08 | 国际商业机器公司 | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
| CN108288582A (en) * | 2018-01-11 | 2018-07-17 | 北京华碳科技有限责任公司 | A kind of wafer scale GaN device substrate transfer method |
| CN108760148A (en) * | 2018-07-20 | 2018-11-06 | 北京航空航天大学 | A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883416A (en) * | 2020-07-17 | 2020-11-03 | 河北同光科技发展有限公司 | Surface protection method for silicon carbide wafer after chemical mechanical polishing |
| CN113284839A (en) * | 2021-05-21 | 2021-08-20 | 中国科学院上海微系统与信息技术研究所 | Heterogeneous bonding method and heterogeneous structure of diamond crystals |
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