CN108760148A - A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor - Google Patents
A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor Download PDFInfo
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- CN108760148A CN108760148A CN201810801164.2A CN201810801164A CN108760148A CN 108760148 A CN108760148 A CN 108760148A CN 201810801164 A CN201810801164 A CN 201810801164A CN 108760148 A CN108760148 A CN 108760148A
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L23/00—Devices or apparatus for measuring or indicating or recording rapid changes, such as oscillations, in the pressure of steam, gas, or liquid; Indicators for determining work or energy of steam, internal-combustion, or other fluid-pressure engines from the condition of the working fluid
- G01L23/06—Indicating or recording by optical means
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Abstract
The invention discloses a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor, the sensing head in the sensor uses the full SiC structures of silicon carbide pressure-sensitive diaphragm and silicon carbide substrate, and vacuum method amber cavity configuration is realized by Direct Bonding；Inventive sensor includes silicon carbide pressure-sensitive diaphragm, silicon carbide substrate, zirconium oxide pedestal, optical fiber, molybdenum enclosed seat and molybdenum packaging body；The SiC pressure-sensitive diaphragms are mounted on the lower section of zirconium oxide pedestal with SiC substrate, and one end of optical fiber is bonded in SiC substrate, and zirconium oxide pedestal is mounted in the countersunk head chamber of molybdenum enclosed seat, and molybdenum packaging body is threaded with below molybdenum enclosed seat；The other end of optical fiber passes through the B central through holes on molybdenum enclosed seat.The present invention measures in real time suitable for aero-engine high-temperature region dynamic pressure and the in situ of flow field characteristic, has many advantages, such as micromation, precision height, electromagnetism interference.
Description
Technical field
The present invention relates to a kind of pressure sensors, refer to a kind of resistance to height of absolute pressure formula Fabry-perot optical fiber silicon carbide more particularly
Temperature and pressure force snesor belongs to aviation pressure sensor manufacturing technology field.
Background technology
Aero engine technology is known as modern industry " jewel on imperial crown ", be a national science and technology, industry, economy and
The important symbol of military capability of the country, performance decide the performance of aircraft.With aero-engine towards high supercharging pressure level, high turbine into
Mouth temperature, height are had an high regard for when high reliability direction and are developed, and how to realize under conditions of complicated and changeable, aero-engine high-temperature region
The measurement of dynamic pressure and flow field characteristic, further to grasp its changing rule, for realizing control and the adjusting pole of engine
Its is important.However, the operating temperature in the regions such as aeroengine combustor buring room is higher than 1000 DEG C, what is generally used at present passes pressure
Sensor is arranged in the indirect measure of low-temperature space, cannot achieve the dynamic monitoring to pressure change.So can be with steady operation
Novel fire resistant pressure sensor in the high temperature environment is urgently researched and developed.
Invention content
In order to adapt to the measurement of aero-engine high-temperature region dynamic pressure and flow field characteristic, the present invention devises a kind of absolute pressure
Formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor.What the present invention designed is full SiC structures sensing head, under SiC substrate
Surface is blind hole, and Fa-Po cavity internal vacuum is completed by bonding, after pressure-bearing sensitive part deformation carry out letter using sapphire fiber
Number conduction and modulation, to encapsulation operation environment without the requirement in terms of vacuum degree.For full SiC structures sensing head using plasma
It reacts deep etching (DRIE) processing technology and prepares gained.The high temperature resistant aviation pressure sensor of the full SiC structures sensing head of the present invention
Have the characteristics that high temperature resistant, precision height, fast response time, electromagnetism interference, the high temperature such as aeroengine combustor buring room may be implemented
Pressure measurement in situ under 1000 DEG C of region or more hot environment.
A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention, includes sensing head,
It is characterized in that：Sensing head is full SiC structures sensing head；
Full SiC structure sensing heads are made of silicon carbide pressure-sensitive diaphragm (1) and silicon carbide substrate (2)；
The A top panels (1A) of the silicon carbide pressure-sensitive diaphragm (1) are shiny surface, the A lower panels of SiC pressure-sensitive diaphragms (1)
The center of (1B) is equipped with A blind holes (1C)；
The B top panels (2A) of the silicon carbide substrate (2) are shiny surface, and are equipped with C at the center of the B top panels (2A)
Blind hole (2D)；The center of the B lower panels (2B) of silicon carbide substrate (2) is equipped with B blind holes (2C)；
It is divided into sensitive part (1D) between the A blind holes (1C) and the B blind holes (2C).
A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensing according to claim 1 of the present invention
Device, it is characterised in that：It is machined with photon crystal optics micro-structure on the A top panels (1A) of the SiC pressure-sensitive diaphragms (1).
A kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention, it is characterised in that：Absolute pressure
Formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor includes silicon carbide pressure-sensitive diaphragm (1), silicon carbide substrate (2), oxygen
Change zirconium base seat (3), optical fiber (4), molybdenum enclosed seat (5) and molybdenum packaging body (6)；The SiC pressure-sensitive diaphragms (1) and SiC substrate
(2) it is mounted on the lower section of zirconium oxide pedestal (3), one end of optical fiber (4) is bonded in SiC substrate (2), zirconium oxide pedestal (3) peace
In the countersunk head chamber (5C) of molybdenum enclosed seat (5), molybdenum packaging body (6) is threaded with below molybdenum enclosed seat (5)；Light
The other end of fine (4) passes through the B central through holes (5A) on molybdenum enclosed seat (5)；
The SiC pressure-sensitive diaphragms (1), the deformation of sensitive part (1D) can be caused when one pressure of external influence；
The SiC substrate (2), is machined with cavity and fiber orientation blind hole respectively on it；
The optical fiber (4) connect with SiC substrate (2), is used for transmission optical signal.
Absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention has the advantages that：
1. the full SiC structures sensing head that the present invention designs, is stacked directly by silicon carbide pressure-sensitive diaphragm and silicon carbide substrate
It is bonded, the sensitive part that obtains vacuum Fa-Po cavity and can be deformed upon after being pressurized, spectral signal passes through sapphire fiber
The pressure measurement under hot environment is realized in conduction.
2. sensing head provided by the invention is full SiC structures, each section coefficient of thermal expansion having the same and heat transfer system
Number, avoids the failure conditions caused by coefficient of thermal expansion difference, reliability is good, temperature drift characteristic is low.
3. SiC substrate provided by the invention is blind hole with sapphire fiber junction, Fa-Po cavity internal vacuum is by being bonded
Process ensures, to encapsulation operation environment without vacuum level requirements.
4. absolute pressure formula Fabry-perot optical fiber silicon carbide high-temperature-resistance pressure sensor provided by the invention is simple in structure, it can be achieved that miniature
Change, high certainty of measurement, strong antijamming capability.
Description of the drawings
Fig. 1 is the external structure of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention.
Figure 1A is the installation diagram of sensing head in absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention.
Figure 1B is the sensing head and zirconium oxide of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention
The installation diagram of pedestal.
Fig. 1 C are the exploded views of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention.
Fig. 2 is knot outside the absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention for not installing optical fiber
Composition.
Fig. 2A is the A-A sectional views of Fig. 2.
Fig. 3 is the overlooking structure figure of the SiC pressure-sensitive diaphragms of the present invention.
Fig. 3 A are the face upwarding assumption diagrams of the SiC pressure-sensitive diaphragms of the present invention.
Fig. 3 B are the overlooking structure figures of the silicon carbide substrate of the present invention.
Fig. 3 C are the face upwarding assumption diagrams of the silicon carbide substrate of the present invention.
Fig. 3 D are the sectional views of the SiC pressure-sensitive diaphragms and silicon carbide substrate of the present invention.
Fig. 4 is the exploded view of another absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the invention.
Fig. 5 is the structure chart of the molybdenum enclosed seat of the present invention.
Fig. 5 A are another viewing angle constructions figures of the molybdenum enclosed seat of the present invention.
Fig. 5 B are the upward views of the molybdenum enclosed seat of the present invention.
Fig. 5 C are the sectional views of the molybdenum enclosed seat of the present invention.
Fig. 6 is the structure chart of the zirconium oxide pedestal of the present invention.
Fig. 7 (a)~Fig. 7 (e) is the preparation technology flow chart of SiC pressure-sensitive diaphragms in the present invention.
Fig. 8 (a)~Fig. 8 (j) is the preparation technology flow chart of SiC substrate in the present invention.
Fig. 9 is Fa-Po cavity of the present invention and the sensitivity behaviour figure of pressure.
Figure 10 is the sensitivity behaviour figure of centre wavelength and pressure of the present invention.
Specific implementation mode
Below in conjunction with drawings and examples, the present invention is described in further detail.
Shown in Fig. 1, Fig. 1 C, Fig. 2, Fig. 2A, Fig. 4, a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant of the invention
Aviation pressure sensor comprising have silicon carbide pressure-sensitive diaphragm 1, silicon carbide substrate 2, zirconium oxide pedestal 3, optical fiber 4, the encapsulation of molybdenum system
Seat 5 and molybdenum packaging body 6.Wherein, silicon carbide pressure-sensitive diaphragm 1 and silicon carbide substrate 2 as shown in Figure 1A constitute full SiC structures sensing
Head.SiC pressure-sensitive diaphragms 1 are mounted on the lower section of zirconium oxide pedestal 3 with SiC substrate 2, and one end of optical fiber 4 is bonded in SiC substrate 2,
Zirconium oxide pedestal 3 is mounted in the countersunk head chamber 5C of molybdenum enclosed seat 5, and the lower section of molybdenum enclosed seat 5 is threaded with the encapsulation of molybdenum system
Body 6；The other end of optical fiber 4 passes through the B central through holes 5A on molybdenum enclosed seat 5.In the present invention, molybdenum enclosed seat 5 and molybdenum system
On the other hand 6 one side of packaging body is used to carry out with the component of aero-engine high-temperature region for installing full SiC structures sensing head
It is fixed.The optical fiber 4 is connect with SiC substrate 2, is used for transmission optical signal；The SiC pressure-sensitive diaphragms 1, when one pressure of external influence
When can cause the deformation of sensitive part 1D.
Silicon carbide pressure-sensitive diaphragm 1
Shown in Figure 1A, Fig. 1 C, Fig. 2A, Fig. 3, Fig. 3 A, Fig. 3 D, Fig. 4, SiC pressure-sensitive diaphragms 1 are that (round or rectangle) is thin
Chip architecture.The A top panels 1A of SiC pressure-sensitive diaphragms 1 is shiny surface, and the center of the A lower panels 1B of SiC pressure-sensitive diaphragms 1 is equipped with A blind holes
1C.Spacer thickness between the A blind holes 1C and the A top panels 1A is that SiC pressure-sensitive diaphragms 1 are bonded with silicon carbide substrate 2
Sensitive part 1D afterwards.In the present invention, micro-nano crystal can be processed on the sensitive part 1D in order to improve sensitivity
Structure.
Shown in Fig. 3 D, the thickness of the sensing unit 1D of SiC pressure-sensitive diaphragms 1 is denoted as h1, the A of SiC pressure-sensitive diaphragms 1 is blind
The radius of hole 1C is denoted as r1, then have, h1=10~50 μm, r1=250~1500 μm.
In the present invention, the sensing unit 1D of SiC pressure-sensitive diaphragms 1 can cause described when by one pressure of external influence
The deformation of SiC pressure-sensitive diaphragms 1, for perceiving ambient pressure.
The method of processing SiC pressure-sensitive diaphragms 1 has：
(A) SiC pressure-sensitive diaphragms 1 are made using ultrasonic milling processing technology；The ultrasound milling processing technology refers to 2017
" Ultrasonic vibration mill-grindingof single-crystal silicon disclosed on November 12, in
Carbide for pressure sensor diaphragms ", author Jiang Yonggang, periodical " Ceramics
International”。“Ultrasonic vibration mill-grinding of single-crystal silicon
The translation of carbide for pressure sensor diaphragms " is " monocrystalline silicon carbide towards pressure-sensitive diaphragm
Ultrasonic milling processing technology ".
(B) using plasma etching technics makes SiC pressure-sensitive diaphragms 1；In the present invention, for making SiC sensing membranes
What the base material of piece 1 was selected is silicon carbide plate, i.e. the first silicon carbide substrate 100, the top of first silicon carbide substrate 100 is denoted as
The lower section of upper surface 100A, first silicon carbide substrate 100 are denoted as lower surface 100B, due to will be in upper surface 100A and following table
Different structure body is made on the 100B of face respectively, is illustrated respectively, the plasma etching skill as shown in Fig. 7 (a)~Fig. 7 (e)
The step of art is processed：
First silicon carbide substrate 100 is sequentially cleaned by ultrasonic through absolute ethyl alcohol, acetone by step 101, then in RCA1 and
After being cleaned in RCA2 solution, clean silicon carbide plate is obtained；The RCA1 solution is ammonium hydroxide:Hydrogen peroxide:Deionized water=1:1:
5；The RCA2 solution is hydrochloric acid (mass percent concentration is 35~38):Hydrogen peroxide:Deionized water=1:1:6.
Step 102, uniformly spin coating fills photoresist and carries out photoetching on the lower surface 100B of clean silicon carbide plate, goes
Except the photoresist of top panel surrounding, the first photoresist configuration 101 in centre is left, pending AA matrixes, such as Fig. 7 are obtained
(a) shown in；
Step 103 is sputtered at W metal on pending AA matrixes using magnetron sputtering technique, forms metal nickel layer 102,
Pending AB matrixes are obtained, as shown in Fig. 7 (b)；
Step 104 removes the first photoresist configuration 101 of removal using organic solvent, obtains pending AC matrixes, Fig. 7 (c)
Shown in patterned W metal mask；
Step 105 performs etching pending AC matrixes using plasma reaction deep etching processing technology (DRIE), institute
It is SF with gas component6/O2, for etching power between 500~1000W, etching obtains pending AD matrixes, described shown in Fig. 7 (d)
There are 103 structures of the first blind hole on pending AD matrixes；
Step 106 removes residual metallic Ni masks (the first metal nickel layer 102) on pending AD matrixes with pickling, obtains
SiC pressure-sensitive diaphragms 1, shown in Fig. 7 (e).
It in the present invention, can be on the A top panels 1A of SiC pressure-sensitive diaphragms 1 in order to realize the reflection characteristic of sensitive part
Photon crystal structure is processed, to further increase transducer sensitivity.
It is designed with photon crystal structure in the sensitive part 1D of SiC pressure-sensitive diaphragms 1：
Step a, the pending AE matrixes after step 106 are sequentially cleaned by ultrasonic through absolute ethyl alcohol, acetone, are then existed
After being cleaned in RCA1 and RCA2 solution, clean pending AF matrixes are obtained；The RCA1 solution is ammonium hydroxide：Hydrogen peroxide：Go from
Sub- water=1:1:5；Described and RCA2 solution is hydrochloric acid (mass percent concentration is 35~38)：Hydrogen peroxide：Deionized water=1:
1:6。
Step b, uniformly spin coating fills photoresist and carries out dot matrix on the upper surface 100A of clean pending AF matrixes
Graphical photoetching removes the photoresist outside top panel figure, leaves graphical photoresist configuration, obtain pending AG matrixes；
Step c, W metal is sputtered on pending AG matrixes using magnetron sputtering technique, formed metal nickel layer to get
To pending AH matrixes；
Step d, removal photoresist configuration is removed using organic solvent, obtained pending with patterned W metal mask
AI matrixes；
Step e, pending AI matrixes are performed etching using plasma reaction deep etching processing technology (DRIE), it is used
Gas component is SF6/O2, and etching power obtains pending AJ matrixes between 300~500W, etching；
Step f, remaining graphical W metal mask on pending AJ matrixes is removed with pickling, obtains top panel and carries photon
Crystal structure, lower panel carry the SiC pressure-sensitive diaphragms 1 of blind hole structure.
Silicon carbide substrate 2
Shown in Figure 1A, Fig. 1 C, Fig. 2A, Fig. 3, Fig. 3 B, Fig. 3 C, Fig. 3 D, Fig. 4, silicon carbide substrate 2 is (round or square
Shape) flake structure.The B top panels 2A of silicon carbide substrate 2 is shiny surface, and is equipped with C blind holes at the center of the B top panels 2A
2D；It is realized using refractory ceramics glue in the C blind holes 2D and fixes one end of optical fiber 4；The B lower panels 2B of silicon carbide substrate 2
Center be equipped with B blind holes 2C.
Shown in Fig. 3 D, the depth of the B blind holes 2C of silicon carbide substrate 2 is denoted as h2, then have, h2=20~80 μm.
The method of processing SiC substrate 2 has：
In the present invention, for make SiC substrate 2 base material select be silicon carbide plate, i.e. the second silicon carbide substrate
200, the top of second silicon carbide substrate 200 is denoted as upper surface 200A, and the lower section of second silicon carbide substrate 200 is denoted as
Lower surface 200B is illustrated respectively due to make different structure body respectively on upper surface 200A and lower surface 200B.Figure
It is the step of the lower surface 200B of silicon carbide plate 200 makes Fa-Po cavity shown in 8 (a)~Fig. 8 (e)：
Second silicon carbide substrate 200 is sequentially cleaned by ultrasonic through absolute ethyl alcohol, acetone by step 201, then in RCA1 and
After being cleaned in RCA2 solution, clean silicon carbide plate is obtained；
Step 202, uniformly spin coating fills photoresist and carries out photoetching on the lower surface 200B of clean silicon carbide plate, goes
Except the photoresist of top panel surrounding, centre the second photoresist configuration 201 is left, pending BA matrixes are obtained, such as Fig. 8 (a)
It is shown；
Step 203 is sputtered at W metal on pending BA matrixes using magnetron sputtering technique, forms metal nickel layer 202,
Pending BB matrixes are obtained, as shown in Fig. 8 (b)；
Step 204 removes the second photoresist configuration 201 of removal using organic solvent, obtains pending BC matrixes, Fig. 8 (c)
Shown in patterned W metal mask；
Step 205 performs etching pending BC matrixes using plasma reaction deep etching processing technology (DRIE), institute
It is SF with gas component6/O2, for etching power between 500~1000W, etching obtains pending BD matrixes, described shown in Fig. 8 (d)
There are 203 structures of a blind hole on pending BD matrixes；
Step 206 removes residual metallic Ni masks (202) on pending BD matrixes with pickling, obtains pending BE matrixes,
Shown in Fig. 8 (e), blind hole structure is the D blind holes 2C of SiC substrate 2 on pending BE matrixes, and the D blind holes 2C depth is method
Amber chamber chamber is long, h2=20~80 μm.
Shown in Fig. 8 (f)~Fig. 8 (j) the step of the upper surface 200A of silicon carbide substrate 200 makes optical fiber mounting hole
For：
Step 207, on another surface (the upper surface 200A of i.e. clean silicon carbide plate 200) of pending BE matrixes
Even spin coating fills photoresist and carries out photoetching, removes the photoresist of top panel surrounding, leaves centre third photoresist configuration
204, pending BF matrixes are obtained, as shown in Fig. 8 (f)；
Step 208 is sputtered at W metal on pending BF matrixes using magnetron sputtering technique, forms third metal nickel layer
205 to get to pending BG matrixes, as shown in Fig. 8 (g)；
Step 209 performs etching pending BG matrixes using plasma reaction deep etching processing technology (DRIE), institute
It is SF with gas component6/O2, for etching power between 500~1000W, etching obtains pending BH matrixes, described shown in Fig. 8 (h)
There are 206 structures of a blind hole on pending BH matrixes；
Step 210 removes residual metallic Ni masks (third metal nickel layer 205) on pending BH matrixes with pickling, obtains
Pending BI matrixes, shown in Fig. 8 (i), blind hole structure is the C blind holes 2D of SiC substrate 2, the C blind holes on pending BI matrixes
2D is used to realize the bonding of one end of optical fiber 4 by refractory ceramics glue.
SiC vanes 1 are bonded with SiC substrate 2：
Step 1：The A top panels 1A (face i.e. to be bonded) of SiC pressure-sensitive diaphragms 1 is polished to surface using chemically mechanical polishing
Roughness is 2nm hereinafter, obtaining pretreatment part AA；
The B lower panels 2B (face i.e. to be bonded) of SiC substrate 2, which is polished to surface roughness, using chemically mechanical polishing is
2nm is hereinafter, obtain pretreatment part BA；
Step 2：After sequentially utilizing deionized water, ethyl alcohol, acetone to be alternately cleaned by ultrasonic pretreatment part AA, blown using nitrogen
It is dry, it is spare to obtain pretreatment part AB；
After sequentially utilizing deionized water, ethyl alcohol, acetone to be alternately cleaned by ultrasonic pretreatment part BA, is dried up, obtained using nitrogen
It is spare to pre-process part BB；
The each 3min of each solution, alternately 3 wheel cleanings；Deionized water is rinsed 3 times, and Piranha is then utilized respectively
Solution, 2 standard solution of RCA 1 and RCA clean the face to be bonded for pre-processing part A, each solution 10min；
Step 3：Pretreatment part AB is pre-processed using hydrofluoric acid solution, handling duration 30min, removal pretreatment part
The surfaces AB native oxide obtains pretreatment part AC；
Pretreatment part BB is pre-processed using hydrofluoric acid solution, handling duration 30min, the surfaces removal pretreatment part BB
Native oxide obtains pretreatment part BC；
Step 4：It is in a solution of hydrofluoric acid that two faces to be bonded for pre-processing part AC with pre-processing part BC are staggered relatively simultaneously
Apply certain pressure, completes pretreatment part AC and be bonded with pretreatment the pre- of part BC, obtain pretreatment part AD；
Step 5：Arranged on the surface of thermal insulation structure pretreatment part AD go forward side by side line unit conjunction, obtain SiC and be bonded sample in advance
Part；The pressure in the vacuum environment to predetermined pressure, which is controlled, using vacuum filtration system is less than 50Pa；It is controlled using heater
Temperature in the thermal insulation structure is bonded SiC exemplar load axial compressive force 50MPa in advance to 1100 DEG C of predetermined temperature.Key
After closing 3h, machine to be bonded takes out after being cooled to room temperature, and completion SiC pressure-sensitive diaphragms 1 are bonded with SiC substrate 2 to be tied to get to full SiC
Structure sensing head.
In the present invention, SiC pressure-sensitive diaphragms 1 are bonded with SiC substrate 2 using under high vacuum environment so that SiC bases
The B blind holes 2C being arranged on plate 2 has Fa-Po cavity characteristic, and therefore, the vacuum degree inside Fa-Po cavity is by the Gao Zhen residing for bonding process
Altitude ensures.In addition, the bonded interface in the full technique of key that the present invention uses between SiC pressure-sensitive diaphragms 1 and SiC substrate 2
There is no have the heterogeneous middle layer such as any other materials.
Zirconium oxide pedestal 3
Shown in Fig. 1 C, Fig. 2A, Fig. 4, Fig. 6, the center of zirconium oxide pedestal 3 is that the centers C passed through for 4 one end of optical fiber lead to
Hole 3A；The lower end of zirconium oxide pedestal 3 is equipped with rectangle countersunk head chamber 3B, the rectangle countersunk head chamber 3B for placing SiC substrate 2.
When using the pressure sensor that designs of the present invention be served in 1000 DEG C of high-temperature areas such as aeroengine combustor buring room with
When in upper hot environment, the coefficient of thermal expansion of zirconium oxide pedestal 3 feature close with carbofrax material is utilized, avoids because heat is swollen
Failure conditions caused by swollen difference of coefficients.
Optical fiber 4
In the present invention, optical fiber 4 selects sapphire fiber.Meet optical coupled item in 2 following table surface roughness of SiC substrate
, can be directly affixed by the C blind holes 2D realizations of refractory ceramics glue and SiC substrate 2 by one end of sapphire fiber 4 under part,
The end face and 2 lower surface of SiC substrate for reaching sapphire fiber 4 are in close contact.A diameter of 125 microns of the sapphire fiber 4,
Optical fiber head is cut to obtain by optical fiber cutter, ensures the flatness of optical fiber head；Sapphire fiber end face and SiC substrate blind hole upper table
Face is in close contact, and is used for transmission optical signal.
Molybdenum enclosed seat 5
Shown in Fig. 1, Fig. 1 C, Fig. 2, Fig. 2A, Fig. 4, Fig. 5, Fig. 5 A-Fig. 5 C, the center of molybdenum enclosed seat 5 is to be used for
The B central through holes 5A that 4 one end of optical fiber passes through；The lower end of molybdenum enclosed seat 5 is equipped with internal thread segment 5B；The inside of molybdenum enclosed seat 5
Equipped with countersunk head chamber 5C, the countersunk head chamber 5C is for placing zirconium oxide pedestal 3, upper end and the countersunk head chamber of the zirconium oxide pedestal 3
Top panel 5D contacts.
Molybdenum packaging body 6
Shown in Fig. 1, Fig. 1 C, Fig. 2, Fig. 2A, Fig. 4, molybdenum packaging body 6 is the cylindrical structure body of multisection type.Molybdenum system is sealed
The center for filling body 6 is the A central through holes 6C entered for air；One end of molybdenum packaging body 6 is equipped with external thread section 6A and installation
The A cooperations panel 6B1 of section 6B, the construction section 6B are contacted with plate 1B below silicon carbide pressure-sensitive diaphragm 1, the external thread section 6A
It is threaded on the internal thread segment 5B of molybdenum enclosed seat 5, realization molybdenum packaging body 6 is fixedly connected with molybdenum enclosed seat 5.
The operation principle of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor of the present invention：
Inventive sensor is that method cloth is formed in SiC sensing heads based on made of Fabry-Perot interference principle
In-Perot interference chamber, 5 end face of sapphire fiber, 1 lower surface of SiC pressure-sensitive diaphragms and 2 upper surface of SiC substrate will produce multi beam
Reflected light simultaneously forms interference fringe.By the demodulation calculating to interference fringe, the mutual distance of each reflecting surface can be obtained,
When 1 compression force effect of SiC pressure-sensitive diaphragms, diaphragm deforms upon, i.e., distance changes between reflecting surface, will be between reflecting surface
The variable quantity of distance demodulates to can be obtained the deformation quantity of SiC pressure-sensitive diaphragms, and then extrapolates SiC pressure-sensitive diaphragm pressures
Value, to realize the measurement to pressure.Measuring device schematic diagram and measuring principle figure are referring to Fig. 5, Fig. 6.
Embodiment 1
The full SiC structures sensing head that the present invention designs is applied to aero-engine high-temperature region dynamic pressure and flow field characteristic
Measurement in, in order to be installed with the device of aero-engine high-temperature region, spy devises molybdenum enclosed seat 5 and molybdenum packaging body 6.
SiC pressure-sensitive diaphragms 1 are mounted on the lower section of zirconium oxide pedestal 3 with SiC substrate 2, and one end of sapphire fiber 4 is bonded in SiC substrate 2
On, zirconium oxide pedestal 3 is mounted in the countersunk head chamber 5C of molybdenum enclosed seat 5, and the lower section of molybdenum enclosed seat 5 is threaded with molybdenum system envelope
Fill body 6；The other end of sapphire fiber 4 passes through the B central through holes 5A on molybdenum enclosed seat 5.
Pressure measurement under the sensor progress hot environment obtained according to embodiment 1, environment temperature is 1000 DEG C, is measured
0~1MPa of range, the long h2 of Fa-Po cavity chamber (not being pressurized) are 40.5 μm, the sensitive part 1D Curveds of SiC pressure-sensitive diaphragms 1 after pressure-bearing
Become, Fa-Po cavity chamber length reduces, and measurement result is as shown in Figure 9.Abscissa is on-load pressure in Fig. 9, and ordinate is that Fa-Po cavity chamber is long,
The sensor measurement is consistent with theoretical value, can be calculated mechanics spirit by Fa-Po cavity change of cavity length amount divided by on-load pressure value
Sensitivity is 7.89nm/kPa.
It is designed with photon crystal structure in the sensitive part 1D of SiC pressure-sensitive diaphragms 1：
Step a, the pending AE matrixes after step 16 are sequentially cleaned by ultrasonic through absolute ethyl alcohol, acetone, are then existed
After being cleaned in RCA1 and RCA2 solution, clean pending AF matrixes are obtained；The RCA1 solution is ammonium hydroxide：Hydrogen peroxide：Go from
Sub- water=1:1:5；Described and RCA2 solution is hydrochloric acid (mass percent concentration is 35~38)：Hydrogen peroxide：Deionized water=1:
1:6。
Step b, uniformly spin coating fills photoresist and carries out dot pattern on the upper surface of clean pending AF matrixes plate
Change photoetching, removes the photoresist outside top panel figure, leave graphical photoresist configuration, obtain pending AG matrixes；
Step c, W metal is sputtered on pending AG matrixes using magnetron sputtering technique, formed metal nickel layer to get
To pending AH matrixes；
Step d, removal photoresist configuration is removed using organic solvent, obtained pending with patterned W metal mask
AI matrixes；
Step e, pending AI matrixes are performed etching using plasma reaction deep etching processing technology (DRIE), it is used
Gas component is SF6/O2, and etching power obtains pending AJ matrixes between 300~500W, etching；
Step f, remaining graphical W metal mask on pending AJ matrixes is removed with pickling, obtains top panel and carries photon
Crystal structure, lower panel carry the SiC pressure-sensitive diaphragms 1 of blind hole structure.
The SiC pressure-sensitive diaphragms 1 obtained after step f are applied in pressure sensor (be known as part of the present invention), and with not
The SiC pressure-sensitive diaphragms pressure sensor (being known as contrast piece) for processing photon crystal structure is compared, as shown in Figure 10.In Figure 10
Abscissa is on-load pressure, wavelength centered on ordinate, since photon crystal structure is different for the reflectivity of different wavelengths of light,
It can be used for improving transducer sensitivity, the remolding sensitivity contrast piece of the part Optical Demodulation of the present invention promotes 2 times or more.
The present invention is a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor, the sensing in the sensor
Head uses the full SiC structures sensing head of silicon carbide pressure-sensitive diaphragm and silicon carbide substrate, the sensor that the present invention designs to be solved
Be aero-engine high-temperature region dynamic pressure and the response speed in flow field characteristic measurement process and precision techniques problem, utilize
The technological means of full SiC structures sensing head with Fa-Po cavity, to realizing to aero-engine high-temperature region dynamic pressure and
The detection in real time in situ of flow field characteristic, obtains the technique effect of the response speed and precision that improve pressure field.
Claims (12)
1. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor, includes sensing head, it is characterised in that：It passes
Sense head is full SiC structures sensing head；
Full SiC structure sensing heads are made of silicon carbide pressure-sensitive diaphragm (1) and silicon carbide substrate (2)；
The A top panels (1A) of the silicon carbide pressure-sensitive diaphragm (1) are shiny surface, the A lower panels (1B) of SiC pressure-sensitive diaphragms (1)
Center is equipped with A blind holes (1C)；
The B top panels (2A) of the silicon carbide substrate (2) are shiny surface, and are equipped with C blind holes at the center of the B top panels (2A)
(2D)；The center of the B lower panels (2B) of silicon carbide substrate (2) is equipped with B blind holes (2C)；
It is divided into sensitive part (1D) between the A blind holes (1C) and the B blind holes (2C).
2. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1, feature
It is：It is machined with photon crystal optics micro-structure on the A top panels (1A) of the SiC pressure-sensitive diaphragms (1).
3. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor, it is characterised in that：Absolute pressure formula Fabry-perot optical fiber
Silicon carbide high temperature resistant aviation pressure sensor includes silicon carbide pressure-sensitive diaphragm (1), silicon carbide substrate (2), zirconium oxide pedestal
(3), optical fiber (4), molybdenum enclosed seat (5) and molybdenum packaging body (6)；The SiC pressure-sensitive diaphragms (1) are mounted on SiC substrate (2)
One end of the lower section of zirconium oxide pedestal (3), optical fiber (4) is bonded in SiC substrate (2), and zirconium oxide pedestal (3) is sealed mounted on molybdenum system
In the countersunk head chamber (5C) for filling seat (5), molybdenum packaging body (6) is threaded with below molybdenum enclosed seat (5)；Optical fiber (4) it is another
One end passes through the B central through holes (5A) on molybdenum enclosed seat (5)；
The SiC pressure-sensitive diaphragms (1), the deformation of sensitive part (1D) can be caused when one pressure of external influence；
The SiC substrate (2), is machined with cavity and fiber orientation blind hole respectively on it；
The optical fiber (4) connect with SiC substrate (2), is used for transmission optical signal.
4. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：It is formed with vacuum Fa-Po cavity after silicon carbide pressure-sensitive diaphragm (1) and silicon carbide substrate (2) bonding, passes through high vacuum
Direct Bonding under environment realizes the sealing of vacuum Fa-Po cavity.
5. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：The SiC pressure-sensitive diaphragms (1) realize that high intensity is affixed with SiC substrate (2) by the method for Direct Bonding, key
Interface is closed without heterogeneous middle layer.
6. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：Optical fiber used is sapphire fiber.
7. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：The SiC pressure-sensitive diaphragms and SiC substrate is processed by ultrasonic vibration milling or plasma etching (RIE) system
Standby gained.
8. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：The blind hole that SiC substrate cavity bottom is connect with optical fiber is as obtained by plasma etching preparation.
9. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：It is affixed using the realization of refractory ceramics glue between sensing head and optical fiber.
10. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：The SiC pressure-sensitive diaphragms are circle, and the SiC sensing heads outer shape is rectangular or round.
11. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：Between a diameter of 500 μm~3mm of the A blind holes (1C) of SiC pressure-sensitive diaphragms (1), SiC pressure-sensitive diaphragms (1) it is quick
Between the thickness for feeling position (1D) is 10 μm~50 μm.
12. a kind of absolute pressure formula Fabry-perot optical fiber silicon carbide high temperature resistant aviation pressure sensor according to claim 1 or 2 or 3,
It is characterized in that：Between Fa-Po cavity length is 20 μm~80 μm.
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