CN101698467B - Scribing method for MEMS wafer level packaging - Google Patents
Scribing method for MEMS wafer level packaging Download PDFInfo
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- CN101698467B CN101698467B CN200910232887A CN200910232887A CN101698467B CN 101698467 B CN101698467 B CN 101698467B CN 200910232887 A CN200910232887 A CN 200910232887A CN 200910232887 A CN200910232887 A CN 200910232887A CN 101698467 B CN101698467 B CN 101698467B
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Abstract
The invention discloses a scribing method for MEMS wafer level packaging, which comprises the following steps: preparing a wafer level glass micro-cavity array, aligning and bonding the wafer level glass micro-cavity array and a corresponding silicon wafer carrying an MEMS element array to perform wafer level packaging; making scribing cracks on one side of the silicon wafer of the packaged wafer according to scribing needs; and applying an even bending force onto the packaged wafer with the scribing cracks to allow part of the cracks on the silicon wafer to expand under the action of a tensile stress generated by bending, so as to allow other parts of the wafer to crack neatly along the directions of the cracks neatly and obtain an MEMS element packaged in a plurality of glass micro cavities. In the invention, by making scribing cracks on the silicon wafer and uniformly bending, the cracks expand to a transitional layer and finally to glass due to the tension of the silicon wafer, so the packaged wafer cracks along preset scribing directions. The method has the characteristics of low cost and high efficiency.
Description
Technical field
The present invention relates to the dicing method of MEMS (Micro-Electro-Mechanical Systems, microelectromechanical systems) wafer level packaging, be specifically related to a kind of dicing method of MEMS wafer level packaging.
Background technology
Preparation glass micro-cavity package of MEMS device is a kind of important new method.Yet the device after the encapsulation is made up of multiple dissimilar materials such as silicon and glass, and the mechanical characteristic of material and physical characteristic differ bigger, and the silica-based MEMS device that how the utilization glass micro-cavity is encapsulated carries out low cost, high efficiency scribing, is a difficult problem.
Existing laser scribing method is applicable to most materials.But because the high light transmittance of glass, laser directly acts on glass, and focus squints easily, is difficult at surperficial position obtain required enough energy and forms crackle.The technology of the direct processed glass of existing laser, equipment cost are also very high.In addition, because the sandwich construction that glass behind the bonding and silicon form is thicker, so the efficient of Laser Processing is lower, and cost is higher.And use diamant to cut a piece of glass, make glass breakage, especially thin glass sheet easily.Existing method is mostly to be to adopt the emery wheel blade that glass is carried out scribing.And the scribing of emery wheel blade is bigger to the damage of emery wheel blade, therefore needs the frequent change blade, and cost is higher.And for the scribing of glass micro-cavity MEMS wafer level packaging sandwich construction, the emery wheel blade should act on sheet glass and act on silicon chip again, therefore consumes manyly, and cost further increases.
Summary of the invention
The present invention provides a kind of dicing method of simple, low-cost, high efficiency MEMS wafer level packaging.
The following technical scheme of employing of the present invention: a kind of dicing method of MEMS wafer level packaging may further comprise the steps: the first step, preparation wafer-stage glass micro-cavity array; In second step, above-mentioned wafer-stage glass micro-cavity array is aimed at the silicon wafer that is loaded with the MEMS device array accordingly, again bonding; Thereby carry out wafer level packaging; In the 3rd step, the one side of the silicon wafer of the disk after said encapsulation need be made the scribing crackle according to scribing, the 4th step; The disk that will have after the encapsulation of scribing crackle applies uniform bending force; The crackle of silicon chip part is expanded because of the action of pulling stress that bending produces, thereby other part that makes disk neatly ruptures according to the direction of crackle, thereby obtain the MEMS device of a plurality of glass micro-cavities encapsulation.
Compared with prior art, the present invention obtains following technique effect:
1. the present invention makes the firm chemical bonding of formation between glass and the silicon through bonding technology, thereby makes the continuous mechanical interface of formation between silicon and the glass.The present invention passes through on silicon chip, to make the scribing crackle, and crooked through evenly, makes crackle expand in transition zone and even the glass because of being drawn because of silicon chip, and the disk after the feasible encapsulation is along predetermined scribing direction fracture.Has close thermal coefficient of expansion between Pyrex7740 glass and the silicon; Have good heat coupling, stable mechanical property is therefore at the later interface that can form low stress of bonding; This has created very favorable condition for crackle according to the direction expansion of setting, and method is simple.If the employing simple glass, and the thermal mismatch stress between the silicon is bigger, in scribing processes, the random expansion of crackle takes place very easily, thus cause the scribing failure.
2. with respect to common fusion bonding method; The present invention is through the method for anode linkage; Between silicon and glass, form the Si-O key, form more firm chemical bonding between glass micro-cavity and the silicon chip when making encapsulation, so during scribing; Crackle fitly expands to glassy layer along the direction of silicon layer more easily, thereby forms neat fracture.If bonding quality is not high, cause forming at the interface more defective easily, crackle makes scribing fail easily not according to the random expansion of direction initialization.
3. existing general technology adopts crusher, and not only tool wear is serious, is easy to generate additional bending force during cutting and makes and processed device failure make it produce irregular cracked because of the bending stress of adding for thin glass more easily.The present invention is particularly useful for thin glass sheet, and especially thickness is the sheet glass below 400 microns, and the distance that thin more sheet glass, crackle are expanded in glass is short more, thereby can not produce irregular cracked; Yet because anode linkage need be exerted pressure, therefore thin excessively sheet glass is cracked in anode linkage technology easily.The present invention adopts the Pyrex7740 glass of 300 micron thick, can obtain best molding effect, and in process, is not easy cracked.
4. the present invention also is applicable to the scribing of silicon-glass-silicon sandwich construction.And prior art is in the scribing of above-mentioned sandwich construction, and cost can further increase.And the present invention is through passing through anode linkage technology between the sandwich construction of glass-silicon-glass; Can between the interface of glass and silicon, form firm chemical bonding; Thereby when bending; In the middle of crackle can expand to glass from silicon along the scribing direction smoothly regularly, and then from glass, expand in the second layer silicon, finally accomplish scribing.The inventive method is simple, and for such sandwich construction, the fracture of its cutting is neat, and its cost is lower, and efficient is higher.
5. the present invention adopts conventional laser processing tool, can be on silicon chip the neat crackle of acquisitions needs, make otch neat, cost is lower, efficient is higher.The present invention even with common laser marking machine silicon chip surface is carried out laser scribing processing, thereby cost is lower, and efficient is higher.
6. when the present invention adopted laser scribing, laser focused on the silicon chip, and monocrystalline silicon absorbs laser fully; The glassy layer out of focus is apart from distant, and the laser that arrives glassy layer relatively disperses, and has reduced the absorption of glassy layer to laser; The benefit of doing like this is to avoid burning glass and produce blackspot; Thereby influence the quality of product, improve the yield rate of processing, and then further cut down finished cost.
Description of drawings
Fig. 1 has the silicon schematic cross-section of specific pattern array
Fig. 2 has the silicon of specific pattern array and the schematic cross-section behind the glass bonding
Fig. 3 heats the sketch map of back after the moulding of action of negative pressure lower-glass microcavity
Fig. 4 glass micro-cavity MEMS wafer level packaging scribing sketch map
Fig. 5 glass micro-cavity MEMS wafer level packaging scribing schematic top plan view
The specific embodiment
A kind of dicing method of MEMS wafer level packaging may further comprise the steps: the first step, preparation wafer-stage glass micro-cavity array; The preparation of glass micro-cavity array can adopt dry method (ICP etching) and wet etching to form, and also can adopt thermoforming process, second step; Above-mentioned wafer-stage glass micro-cavity array and the silicon wafer that is loaded with MEMS device (can be accelerometer or gyroscope, market can be buied, and for example AD company produces) array are accordingly aimed at; Bonding under specific atmosphere again, bonding can adopt methods such as anode linkage, fusion bonding, thereby carries out wafer level packaging; Particular atmosphere can be vacuum or nitrogen, helium atmosphere, requires to select for use the 3rd step according to the encapsulation of MEMS device; The one side of the silicon wafer of the disk after said encapsulation need be made the scribing crackle according to scribing, makes the scribing crackle and can pass through wet method or dry etching, also can adopt the method for Laser Processing; In the 4th step, the disk that will have after the encapsulation of scribing crackle applies uniform bending force, and the crackle of silicon chip part is expanded because of the action of pulling stress that bending produces; Crackle passes through the interface; And further expanding on glassly, other part that makes disk neatly ruptures according to the direction of crackle, thereby the MEMS device array is divided into a plurality of MEMS devices by the glass micro-cavity encapsulation.
In the present embodiment, between glass micro-cavity and silicon chip, obtaining better bond strength, help the expansion of crackle rule through the interface, second step, described bonding method was preferably the anode linkage method.The technology of anode linkage: temperature 200-600 ℃, voltage is 300-1000V, and pressure is 200N-1000N, for example can be chosen for: 400 ℃ of temperature, voltage: 600V, pressure are 800N.In the present embodiment, silicon wafer and glass wafer in second step are cleaned before bonding and polish.This more helps increasing bond strength, thereby more helps the rule expansion of crackle.
In the present embodiment, the 3rd step, the preferred laser scribing method that adopts was made the scribing crackle on described silicon chip.For obtaining low cost, the equipment that laser scribing adopts is preferably laser marking machine.For example; Model is the laser marking machine of CT-LC100, and manufacturer is a Wuhan sky above Hubei and Hunan laser, optical maser wavelength: 1.064um; Laser power: 100W (lamp pumping); Modulating frequency: 200Hz-50KHz, maximum depth of cut: the 1.5mm (monocrystalline silicon) of cut coverage: 180mmX180mm, the cutting live width: (0.02-0.2) mm looks material and decides.
In the present embodiment, the material of said glass is preferably Pyrex7740 glass, and the method for the array of glass micro-cavity described in the first step is preferably thermoforming process; Its concrete steps are: at first utilize Si micro fabrication etching on the Si disk to form the specific pattern array, this pattern essence is some grooves, and the pattern of etching can be quadrangle, circle, triangle etc.; Requirement according to actual package is adjusted; Again above-mentioned Si disk and Pyrex7740 glass wafer are carried out anode linkage, the technology of anode linkage under less than the atmosphere of 1Pa: 400 ℃ of temperature, voltage: 600V; Pressure is 200N-1000N; Make Pyrex7740 glass and above-mentioned specific pattern array form seal chamber, then that above-mentioned bonding is good disk is heated to 810 ℃～890 ℃ under an atmospheric pressure, insulation 3～5min; Glass after chamber external and internal pressure official post is softening forms and the corresponding micro-cavity structure of above-mentioned microcavity patterning; Cooling obtains said glass micro-cavity array, in the second time, anode linkage was encapsulated in the MEMS device.
In the present embodiment,, the silicon wafer on the said glass micro-cavity array is removed through caustic solution for exposing glass micro-cavity.The microcavity number that said microcavity array comprises is at least two, for example 50, and 500.Thickness the best of said glass wafer is 300 microns, and the thickness of said silicon chip can adopt standard silicon chip thickness: 500 microns.
A kind of dicing method of glass micro-cavity MEMS wafer level packaging; May further comprise the steps: the first step, utilize the Si micro fabrication to go up etching and form specific pattern at Si disk (for example 4 inches disks), the micro fabrication that former of said Si goes up patterning is a kind of in wet corrosion technique or dry method inductively coupled plasma (ICP) etching technics, reactive ion etching (RIE) or the deep reaction ion etching; This pattern can be square or the circular trough array; Also can be multiple different patterns, (the specific pattern of in fact, on silicon chip, carving; Seeing it is cutting on the three-dimensional, is pattern on the two dimension).Second step; With above-mentioned Si disk and Pyrex7740 glass wafer (a kind of brand of Pyrex; U.S. CORNING-corning company produces, and market can be buied, usually through polishing; Its size is identical with the Si disk) carry out anode linkage, make Pyrex7740 above-mentioned specific pattern on glass form seal chamber.In the 3rd step, thermoforming forms the glass micro-cavity array.The 4th step, corrode silicon with TMAH, remove silicon wafer, the TMAH solution concentration is 25%.The 5th step, glass micro-cavity and the silicon wafer that is stained with chip are carried out anode linkage, form the encapsulation of chip.The 6th step; Make crackle with laser, the disk that will have after the encapsulation of scribing crackle applies uniform bending force, and the crackle of silicon chip part is expanded because of the action of pulling stress that bending produces; Crackle passes through the interface; And further expanding on glassly, other part that makes disk neatly ruptures according to the direction of crackle, thereby the MEMS device array is divided into a plurality of MEMS devices by the glass micro-cavity encapsulation.
For between glass micro-cavity and silicon chip, obtaining better bond strength, help the expansion of crackle rule through the interface, second step and described anode linkage method of the 5th step will suitably be controlled on technology.Bonding is adapted at 400 ℃ of temperature, voltage: 600V, pressure 800N; (such as air pressure is 0.5Pa, 0.2Pa, 0.1Pa under the atmosphere less than 1Pa; 0.05Pa, 0.01Pa, 0.001Pa); Bonding surface should keep highly cleaning and minimum surface roughness before bonding, to satisfy the requirement of conventional bonding.Thermoforming effect for obtaining in the present embodiment, the 3rd step thermoforming process is following: the disk that above-mentioned bonding is good is heated to 750 ℃～890 ℃ under an atmospheric pressure, under this temperature, be incubated 3～5min, and for example temperature can be chosen for 820 ℃; 840 ℃, 845 ℃, 850 ℃, 860 ℃; 890 ℃, insulation 3～5min, the time can be chosen for: 3.2min, 3.5min; 3.8min, 4min, 4.2min, 4.4min; 4.8min the glass after chamber external and internal pressure official post is softening forms and above-mentioned microcavity patterning corresponding structure, is cooled to lower temperature, as 20-25 ℃; Be 22 ℃ for example, with above-mentioned disk stress relieving by annealing under normal pressure, this normal pressure is meant an atmospheric pressure.
For improving the speed of the 4th step corrosion silicon, TMAH corrosion silicon technology adopts 90 ℃ water-bath, has improved the activity of TMAH: changed TMAH solution one time in every 5-6 hour, and guaranteed the concentration of corrosive liquid in the present embodiment.Under these process conditions, corrosion rate is per hour 50 microns.In the present embodiment, the crackle that preferably to adopt laser on monocrystalline silicon, to make a degree of depth be 200-300nm, the disk that will have after the encapsulation of scribing crackle applies uniform bending force; Concrete operations are that disk is lain on the desk; Smooth plate glass on its surface pressure, through pushing to its suitable pressure (being controlled between fixed wafer and the pressure break microcavity), crackle and table mouthful align; The disk that will be exposed at the desk outside with clip is clamped; Apply uniform bending force so just can for the disk that is exposed at outside the table, the crackle of silicon chip part is expanded because of the action of pulling stress that bending produces, crackle passes through the interface; And further expanding on glassly, other part that makes disk neatly ruptures according to the direction of crackle.
The scribing of the Pyrex7740 glass that the MEMS field is commonly used may further comprise the steps: the first step, with (4 inches) Pyrex7740 glass wafer (a kind of brand of Pyrex of Si disk and same size; U.S. CORNING-corning company produces, and market can be buied, through polishing) close at the enterprising line unit of EVG-501 anode linkage machine; Second step, need make the scribing crackle in the one side of silicon wafer according to scribing, make the scribing crackle and can pass through wet method or dry etching; Also can adopt the method for Laser Processing, in the 3rd step, the disk that will have after the encapsulation of scribing crackle applies uniform bending force; The crackle of silicon chip part is expanded because of the action of pulling stress that bending produces; Crackle is through the interface, and further expands on glassly, and other part that makes disk neatly ruptures according to the direction of crackle.The 4th step, corrode silicon with TMAH, remove silicon wafer, the TMAH solution concentration is 25%, with deionized water glass cleaning sheet, accomplishes the process of going back bare glass.
Be between glass micro-cavity and silicon chip, to obtain better bond strength in the present embodiment, help the expansion of crackle rule through the interface, first step anode linkage will suitably be controlled on technology.Bonding is adapted at 400 ℃ of temperature, voltage: 600V, pressure 800N; (such as air pressure is 0.5Pa, 0.2Pa, 0.1Pa under the atmosphere less than 1Pa; 0.05Pa, 0.01Pa, 0.001Pa); Bonding surface should keep highly cleaning and minimum surface roughness before bonding, to satisfy the requirement of conventional bonding.For improving the speed of the 4th step corrosion silicon, TMAH corrosion silicon technology adopts 90 ℃ water-bath, has improved the activity of TMAH: changed TMAH solution one time in every 5-6 hour, and guaranteed the concentration of corrosive liquid in the present embodiment.Under these process conditions, corrosion rate is per hour 50 microns.In the present embodiment, the crackle that preferably to adopt laser on monocrystalline silicon, to make a degree of depth be 200-300nm, the disk that will have after the encapsulation of scribing crackle applies uniform bending force; Concrete operations are that disk is lain on the desk, and smooth plate glass on its surface pressure is through pushing to its suitable pressure; Crackle aligns with the table mouth, and the disk that will be exposed at the desk outside with clip is clamped, and apply uniform bending force so just can for the disk that is exposed at outside the table; The crackle of silicon chip part is expanded because of the action of pulling stress that bending produces; Crackle is through the interface, and further expands on glassly, and other part that makes disk neatly ruptures according to the direction of crackle.
Protection scope of the present invention is not limited to foregoing, and any conventional conversion that with the present invention is the basis is all in protection scope of the present invention.
Claims (9)
1. the dicing method of a MEMS wafer level packaging is characterized in that may further comprise the steps: the first step, preparation wafer-stage glass micro-cavity array (8); In second step, above-mentioned wafer-stage glass micro-cavity array is aimed at the silicon wafer that is loaded with MEMS device (7) array accordingly, again bonding under particular atmosphere; Thereby carry out wafer level packaging; In the 3rd step, the one side of the silicon wafer of the disk after said encapsulation need be made scribing crackle (6) according to scribing, the 4th step; The disk that will have after the encapsulation of scribing crackle applies uniform bending force; The crackle of silicon wafer part is expanded because of the action of pulling stress that bending produces, thereby other part that makes disk neatly ruptures according to the direction of crackle, thereby obtain the MEMS device of a plurality of glass micro-cavities encapsulation.
2. the dicing method of MEMS wafer level packaging according to claim 1 is characterized in that, the 3rd step adopted the laser scribing method on described silicon wafer, to make the scribing crackle.
3. the dicing method of MEMS wafer level packaging according to claim 2 is characterized in that, the equipment that laser scribing adopts is laser marking machine.
4. the dicing method of MEMS wafer level packaging according to claim 1 and 2; It is characterized in that the material of said glass is Pyrex7740 glass (3), the method for the array of glass micro-cavity described in the first step is: at first utilize silicon (1) micro fabrication etching on silicon wafer to form specific pattern array (2); Again above-mentioned silicon wafer and Pyrex7740 glass wafer are carried out anode linkage under less than the atmosphere of 1Pa; Make Pyrex7740 glass and above-mentioned specific pattern array form seal chamber (5), then that above-mentioned bonding is good disk is heated to 810 ℃～890 ℃ under an atmospheric pressure, insulation 3～8min; Glass after chamber external and internal pressure official post is softening forms and the corresponding micro-cavity structure of above-mentioned specific pattern array (4); Cooling obtains said glass micro-cavity array (8), in the secondary anode bonding is encapsulated in MEMS device (7).
5. the dicing method of MEMS wafer level packaging according to claim 1 is characterized in that: second step, described bonding method was the anode linkage method.
6. the dicing method of MEMS wafer level packaging according to claim 4 is characterized in that: the silicon wafer on the said glass micro-cavity array is removed through caustic solution.
7. the dicing method of MEMS wafer level packaging according to claim 1 is characterized in that: the microcavity number that said microcavity array comprises is at least two.
8. the dicing method of MEMS wafer level packaging according to claim 1 is characterized in that silicon wafer and glass wafer in second step are cleaned before bonding and polish.
9. the dicing method of MEMS wafer level packaging according to claim 4, the thickness that it is characterized in that said glass wafer is 300 microns, the said thickness that is used for the silicon wafer of glass micro-cavity thermoforming is 500 microns.
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| US8524572B2 (en) | 2011-10-06 | 2013-09-03 | Micron Technology, Inc. | Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions |
| CN103187349A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Fixture with salient point wafer bonding and bonding method thereof |
| CN104649221A (en) * | 2015-01-19 | 2015-05-27 | 北京大学 | Method for processing complex silica glass composite structure wafer |
| CN104860260A (en) * | 2015-04-16 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | Scribing method for MEMS wafer level packaging |
| TWI650540B (en) * | 2017-07-07 | 2019-02-11 | 台灣奈米碳素股份有限公司 | Method of manufacturing gas detector using microelectromechanical systems |
| CN108117034B (en) * | 2017-12-29 | 2023-12-26 | 杭州士兰集成电路有限公司 | MEMS component and manufacturing method thereof |
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