CN104501729B - A kind of fiber F-P strain gauge and forming method based on MEMS technology - Google Patents
A kind of fiber F-P strain gauge and forming method based on MEMS technology Download PDFInfo
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- CN104501729B CN104501729B CN201410728295.4A CN201410728295A CN104501729B CN 104501729 B CN104501729 B CN 104501729B CN 201410728295 A CN201410728295 A CN 201410728295A CN 104501729 B CN104501729 B CN 104501729B
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Abstract
The invention discloses a kind of optical fiber F P strain gauges and forming method based on MEMS technology, belong to high-precision optical fiber sensing measurement field.The optical fiber F P strain gauges mainly include F P strain sensitives MEMS chips and collimator and extender optical fiber；Wherein, F P strain sensitives MEMS chip is made of SOI strain beams, glass fixed pole and silicon casing；SOI strain beams include top layer silicon, intermediate oxide layer and bottom silicon；SOI strain beams are fixed on by silica glass anode linkage on glass fixed pole, and glass fixed pole is fixed on by silica glass anode linkage on silicon casing, and collimator and extender optical fiber is fixed on by solder on silicon casing；The F P presser sensors MEMS chip is prepared based on MEMS micro-processing technology, can realize that the micromation of device, mass make；Strain gauge has the F P interference spectrums of high-fineness, highly sensitive wavelength signals demodulation acquisition and high measurement accuracy may be used and can realize concatenation of the more strain gauges on single-core fiber by wavelength-division multiplex and time division multiplexing.
Description
Technical field
The present invention relates to a kind of fiber F-P strain gauges and forming method based on MEMS technology, belong to high-precision optical fiber biography
Sensed quantity field.
Background technology
In engineering measuring technology, strain measurement is one of technology the most basic and important.Resistance strain measurement method
It is a kind of basic traditional means for obtaining strain-gauge test data, however, resistance strain gage anti-fatigue performance is poor, null offset is tight
Weight, is easily influenced by environmental factors such as electromagnetic field, temperature, humidity, chemical attacks, is not used to long-term on-line measurement, can not
Meets the needs of accurate measuring strain in high temperature, electromagnetic environment.
In recent years, fibre optical sensor is as a kind of novel measurement means, because of its anti-interference (such as electromagnetic field, humidity, change
Learn corrosion etc.) strong, long lifespan, durability good (such as wavelength-division multiplex and time division multiplexing), can long distance signal transmission good characteristic,
Increasingly extensive application is obtained in engineering survey and scientific experimentation.In single-point or quasi-distributed Multipoint strain gauging field, especially
It is most widely used in terms of fiber grating strain with fiber F-P strain gauge.
Fiber grating processing and fabricating is simple, serial or parallel connection networking is easy, in soil such as bridge, dam, tunnel, skyscrapers
Wood engineering structural safety monitoring field is widely applied, and is supervised in recent years in the test for static load such as aircraft, ship and structural health
Also there is application in survey, it has also become a kind of increasingly mature strain measurement technique means.
Compared with fiber grating strain meter, fiber F-P strain gauge has more compact construction, especially in sensitivity and
The advantage for having fiber grating strain meter incomparable in terms of high temperature resistant.Therefore, in recent years in aerospace, national defense and military and work
High temperature, field of high-precision measurement, the fiber F-P strain gauges such as industry manufacture have shown irreplaceable exclusive technical advantage.
In the manufacturing process of fibre-optical F-P sensor, the most key is the making and encapsulation of F-P optical interference chambers, due to
Its operation principle determines F-P optical interference chamber by having the two of certain reflectivity parallel planes to form, and light beam is more therebetween
Secondary reflection forms multiple-beam interference, and therefore, the surface smoothness and the depth of parallelism of two planes of reflection of F-P optical interference chamber have harshness
Requirement, just can guarantee and obtain good signal-to-noise ratio.Traditional fiber end face manufacturing process is difficult to realize F-P optical interference chambers
Mass makes, and the long-time stability after the alignment precision of two fiber end faces and encapsulation are also insoluble problem.
In recent years, the appearance of deep ultraviolet laser processing technology and femtosecond laser processing technology has driven the quick of optical fiber micro-nano technology technology
Development, both can construct F-P optical interference chambers after fiber end face ablation microcavity by fiber end face welding, can also
F-P optical interference chambers are directly axially formed by cutting cutting to optical fiber, it is achieved thereby that the batch of F-P optical interference chambers
Change manufacture, while significantly reduce the volume of fiber F-P strain gauge.But these are based on fiber end face processing or optical fiber ontology
The F-P optical interference chamber that produced by micro processing goes out is due to that can not obtain best bright finish reflecting surface, it is also difficult to be carried by optical coating
The optical reflectivity in high reflection face, therefore, it is difficult to improve the interference spectrum fineness of F-P optical interference chambers, it is difficult to further improve
Measurement Resolution can not meet small-range, highly sensitive strain measurement application field (such as high-speed wind tunnel aerodynamics force measurement, industry
Field multi -components dynamic force and torgue measurement)；And it since the interference fineness factor of F-P optical interference chambers is low, can only use
Intensity modulated Demodulation Type and phase-modulation Demodulation Type signal demodulation mode, easily by the shadow of light source power fluctuation and optical fiber bending
It rings.
Invention content
In view of this, it is described one of the objects of the present invention is to provide a kind of fiber F-P strain gauge based on MEMS technology
Fiber F-P strain gauge has the F-P interference spectrums of high-fineness, wavelength signals demodulation acquisition high sensitivity and high measurement may be used
Precision and concatenation that can be by wavelength-division multiplex and time division multiplexing more strain gauges of realization on single-core fiber；The second purpose exists
MEMS technology system is used in the device for providing strain gauge described in a kind of forming method of the fiber F-P strain gauge based on MEMS technology
Make, can realize that the micromation of device, batch unification make.
The purpose of the present invention is realized by following technical scheme：
A kind of fiber F-P strain gauge based on MEMS technology, the fiber F-P strain gauge mainly include F-P strain sensitives
MEMS chip and collimator and extender optical fiber；
Wherein, F-P strain sensitives MEMS chip is made of SOI strain beams, glass fixed pole and silicon casing；
The SOI strain beams include top layer silicon, intermediate oxide layer and bottom silicon；Wherein, the side end face deposition of bottom silicon
There are anti-reflection film and passivation layer；Another side end face deposition has high-reflecting film；Intermediate oxide layer and top layer silicon are machined with centre bore, described
Centre bore is coaxial, and aperture just as；
One side end face of the glass fixed pole deposition has anti-reflection film, and another side end face deposition has high-reflecting film；
The silicon casing is machined with centre bore；
The upper end of the collimator and extender optical fiber is provided with GRIN Lens or equivalent optics (realize fiber exit light
Parallel expand)；The outgoing collimated light beam diameter of the collimator and extender optical fiber is more than fibre core diameter.
Integrated connection relationship is：
SOI strain beams are fixed on by silicon-glass anodic bonding on glass fixed pole, and bonding face is top layer in soi wafer
The end face that siliceous deposits has high-reflecting film side has the end face of high-reflecting film side with glass fixed pole deposition；Glass fixed pole by silicon-
Glass anode linkage is fixed on silicon casing, and bonding face has the end face of anti-reflection film side and silicon casing one for glass fixed pole deposition
The end face of side；Collimator and extender optical fiber is coaxially fixed on by solder on silicon casing；Wherein, intermediate oxide layer and top layer silicon centre bore
Inner peripheral surface, top layer siliceous deposits have the end face that the end face of I side of high-reflecting film has II side of high-reflecting film with glass fixed pole deposition
Form closed cavity one；The inner peripheral surface in silicon cannula center hole, glass fixed pole deposition have end face and the standard of I side of anti-reflection film
Straight expanded core fiber upper surface forms confined space two；Region between high-reflecting film I and high-reflecting film II forms F-P optical interference chambers；
The anti-reflection film I, anti-reflection film I, high-reflecting film I and high-reflecting film II central point be located on the axis of top layer silicon centre bore；It is and anti-reflection
Film I, anti-reflection film I, high-reflecting film I and high-reflecting film II area be all higher than the outgoing beam area of collimator and extender optical fiber, the light beam
A diameter of 50~300 μm.
The preferred SiO of anti-reflection film constituent material2/Ta2O5Composite dielectric film, SiO2/TiO2Composite dielectric film and SiO2/
Si3N4One kind in composite dielectric film；
The preferred SiO of high-reflecting film2/Ta2O5Composite dielectric film, SiO2/TiO2Composite dielectric film and SiO2/Si3N4Composite dielectric film
In one kind；
Wherein, metallic film material also can be used in the high-reflecting film on SOI strain beams bottom silicon；The preferred gold of the metal or
Aluminium；When the high-reflecting film on bottom silicon uses metallic film material, the right end face of bottom silicon can not deposit anti-reflection film.
Operation principle：
Fiber F-P strain gauge utilizes Fabry-Perot (Fabry-Perot, abbreviation F-P) principle of interference：Work as coherent beam
It, should in high-reflecting film and the SOI of glass fixed pole right end face when being incident on F-P strain sensitive MEMS chips along collimator and extender optical fiber
Multiple reflections form multiple-beam interference, and along backtracking to collimator and extender light between becoming the high-reflecting film of beam bottom silicon left end face
It is fine.Along backtracking to the high-reflecting film of the interference output signal of collimator and extender optical fiber and glass fixed pole and SOI strain beam bottoms
The length of microcavity between the high-reflecting film of silicon is related.Under the action of external strain, high-reflecting film and the SOI of glass fixed pole are strained
The length of microcavity between the high-reflecting film of beam bottom silicon changes so that back to the interference output signal of collimator and extender optical fiber
Wavelength or phase accordingly change, it is possible thereby to realize the external stress for acting on F-P fiber optic strain gages is strained carry out it is accurate
It measures.
A kind of forming method of the fiber F-P strain gauge based on MEMS technology, the method are as follows：
(1) it is etched after photoetching treatment is carried out in the top layer silicon of soi wafer using Deep RIE techniques, in the axis of top layer silicon
To formation circular hole；Etching depth is the thickness of top layer silicon；
(2) intermediate oxide layer exposed on soi wafer is removed using wet etching or dry etching, in intermediate oxidation
Layer is axially formed circular hole；
(3) high-reflecting film is deposited in the end face of bottom silicon side (reflectivity is higher than 95%)；Figure is carried out to the high-reflecting film
Change is handled；Obtain SOI strain beams；
(4) in the end face of glass fixed pole side deposition high-reflecting film (reflectivity 95~96%)；The high-reflecting film is carried out
Graphical treatment；
(5) the glass fixed pole that the soi wafer for obtaining step (1)~(3) is obtained with step (4) carries out si-glass sun
Pole is bonded, and has the end face of high-reflecting film side and glass fixed pole deposition to have high-reflecting film side for top layer siliceous deposits in soi wafer
End face；
(7) glass fixed pole is not bonded the end face deposition anti-reflection film of side with soi wafer after bonding, and to described anti-reflection
Film is patterned processing；
(8) upper surface of double throwing silicon chips after oxidation carries out photoetching, erodes the oxide layer in litho pattern；Then with
Oxide layer and photoresist are performed etching using Deep RIE techniques as mask, are axially formed circular hole on double throwing silicon chips, obtain
To round-meshed silicon casing；The Circularhole diameter is more than the diameter of collimator and extender optical fiber；
(9) the silicon casing for obtaining step (8) carries out silicon-glass anodic bonding with glass fixed pole, and bonding face is glass
Fixed pole deposition has the end face of anti-reflection film side and the end face of silicon casing side；Then, successively in the another of SOI strain beam bottom silicon
One side end face deposits anti-reflection film and passivation layer, and is patterned processing to anti-reflection film and passivation layer, obtains F-P strain sensitives
MEMS chip；
(10) collimator and extender optical fiber is fixed on by solder on F-P strain sensitive MEMS chips in the circular hole of silicon casing,
Obtain fiber F-P strain gauge of the present invention.
Wherein, the high-reflecting film graphical treatment corrodes high-reflecting film technique or Lift-off works again after preferably using photoetching
Skill；
The anti-reflection film graphical treatment corrodes anti-reflection membrane process or Lift-off techniques again after preferably using photoetching.
Advantageous effect
(1) fiber F-P strain gauge of the present invention is by high sensitivity optical fiber F-P strain detectings technology and MEMS microfabrications
Technology is combined, and has the notable technical advantages such as operating temperature range is wide, the chemical burn into electromagnetism interference of tolerance.
(2) soi wafer of F-P strain sensitive MEMS chips efficiently solves in fiber F-P strain gauge of the present invention
The problems such as existing F-P strain transducers both ends of the surface depth of parallelism is poor, F-P cavity length cannot be controlled accurately, so as to fulfill high-precision, height
The batch unification of the F-P strain gauges of resolution ratio makes.
(3) in fiber F-P strain gauge of the present invention, strain beam is made using SOI, by the left of SOI strain beam bottoms silicon
The high-reflecting film of end face and the high-reflecting film of glass fixed pole right end face form F-P strain sensitive chambers, the initial length of F-P cavity by
The intermediate oxide layer of soi wafer and the thickness of top layer silicon strictly control；Solves existing F-P strain transducers F-P cavity initial cavity
The problem of length cannot be controlled accurately, it is ensured that the batch consistency of F-P strain gauges；F-P strain sensitive chambers both sides SOI strain beams
Bottom silicon and glass fixed pole retain original size, and the intermediate oxide layer of F-P strain sensitive cavity outer walls and top layer silicon are equal
For circular ring shape so that under the action of external strain, draw, compressive strain concentrate on SOI strain beams circular ring shape intermediate oxide layer and
Top layer silicon area not only reduces the equivalent stiffness of strain gauge, and ensures that the both sides high-reflecting film of F-P cavity keeps low-down and sticks up
Song avoids the problem of interference spectrum deterioration reduces accuracy of detection and resolution ratio under effects of strain.
(4) metallic film can be used in the high-reflecting film on the bottom silicon of the soi wafer in fiber F-P strain gauge of the present invention
Material, when the high-reflecting film on bottom silicon uses metallic film material, the upper surface of bottom silicon, which need not deposit anti-reflection film, to be kept away
Exempt from the appearance of interference F-P signals.
(5) the method for the invention is based on MEMS micro-processing technology and prepares F-P strain sensitive MEMS chips, F-P optics
One of reflecting surface of interference cavity is formed after depositing high-reflecting film for the bottom silicon initial polishing surface of soi wafer, another
Reflecting surface is formed after depositing high-reflecting film for the initial polishing surface of sheet glass, all very bright and clean and smooth, passes through si-glass anode
There is the fabulous depth of parallelism after bonding is fixed, very high F-P optical interference chamber interference fineness, the fineness factor can be obtained
Namely the ratio between free spectrum width FSR and signal spectrum three dB bandwidth FWHM can be used wavelength signals demodulation mode and strained not less than 20
Signal detection improves strain resolution and measurement accuracy, solves F-P optical interference chamber using intensity modulated demodulation method and phase
Position modulation-demo-demodulation method present in sensitivity it is low, by light source power fluctuation and fiber kinks influenced the problems such as.
(6) the F-P strain sensitive MEMS chips of the present invention prepared based on MEMS micro-processing technology carry axial circular hole,
For being bonded or welded composition fiber F-P strain gauge after fixed collimator and extender optical fiber, the micromation of fiber F-P strain gauge is realized
Encapsulation reduces the initial encapsulation stress of fiber F-P strain gauge, improves the Temperature repeatability of fiber F-P strain gauge and long-term
Zero stability.
(7) fiber F-P strain gauge of the present invention is by using collimator and extender optical fiber, expands diameter 50 by hot spot is parallel
μm or more carry out light path coupling, signal severe exacerbation caused by due to beam divergence, angular deviation can be reduced, so as to reduce coupling
The difficulty of encapsulation.
(8) the method for the invention can realize that the mass of fiber F-P strain gauge manufactures, at the beginning of fiber F-P strain gauge
The batch consistency of the key parameters such as beginning chamber length, strain measurement sensitivity, range is easy to ensure, can be widely used for aviation and navigate
My god, the novel optical fiber aerodynamics force measurement balance be badly in need of of traffic, the fields aerodynamic test such as the energy, it may also be used for metallurgical, power generation
The high temperature in field is weighed and the high temperature strain measurement of the special equipments such as boiler, pressure pipeline, is needing more points of high-acruracy survey
The application field of amount combination, power and torque especially has technical advantage, meets need of the national economic development to high-end measuring instrument
It asks.
(9) fiber F-P strain gauge of the present invention is directly by F-P strain sensitives MEMS chip and collimator and extender optical fiber one
Change encapsulation, there is good shock resistance overload capacity and high reliability, it is follow-up non-maintaining, it can accurately measure for a long time.Pacifying
It fills application scenario inconvenient, difficult in maintenance and has more significant advantage.
Description of the drawings
Fig. 1 is the structure diagram of fiber F-P strain gauge of the present invention；
Fig. 2 is the structure diagram of F-P strain sensitive MEMS chips；
Fig. 3 is the process flow chart of fiber F-P strain gauge of the present invention；
Fig. 4 is that the high-fineness optical interference of fiber F-P strain gauge of the present invention is composed；
Fig. 5 is the low fineness typical optical interference spectrum of existing F-P strain gauges；
Fig. 6 is that characteristic is surveyed in wavelength-strain of fiber F-P strain gauge of the present invention；
Fig. 7 is wavelength-division multiplex+time division multiplexing networking diagram of fiber F-P strain gauge of the present invention.
Wherein, 1-F-P strain sensitives MEMS chip, 2- collimator and extender optical fiber, 3- sheet glass, 4- is bis- to throw silicon chip, 5- top layers
Silicon, 6- intermediate oxide layers, 7- bottom silicon, 8- anti-reflection films I, 9- high-reflecting films II, 10- passivation layers, 11- anti-reflection films II, 9- high-reflecting films
Ⅱ。
Specific embodiment
The present invention is described in detail in the following with reference to the drawings and specific embodiments, but not limited to this.
Embodiment
A kind of structure diagram of the fiber F-P strain gauge based on MEMS technology is as shown in Figure 1, the fiber F-P strains
Meter mainly includes F-P strain sensitives MEMS chip 1 and collimator and extender optical fiber 2；
Wherein, the structure diagram of F-P strain sensitives MEMS chip 1 is as shown in Fig. 2, the F-P strain sensitives MEMS cores
Piece 1 is made of SOI strain beams, glass fixed pole 3 and silicon casing 4；
The SOI strain beams include top layer silicon 5, intermediate oxide layer 6 and bottom silicon 7；Wherein, the end face of 7 side of bottom silicon
Deposition has graphical anti-reflection film 8 and passivation layer 10, and another side end face deposition has high-reflecting film 9；Intermediate oxide layer 6 and top layer silicon 5 are equal
Be machined with centre bore, the centre bore is coaxial, and aperture just as；
The end face deposition of 3 side of glass fixed pole has anti-reflection film 8, and the end face deposition of opposite side has high-reflecting film 9；
The silicon casing 4 is machined with centre bore；
The upper end of the collimator and extender optical fiber 2 is provided with GRIN Lens or equivalent optics；The collimator and extender
The outgoing collimated light beam diameter of optical fiber 2 is more than fibre core diameter；
The high-reflecting film 9, anti-reflection film 8, intermediate oxide layer 6 and top layer silicon 5 are coaxial；And the area of high-reflecting film 9 and anti-reflection film 8
The outgoing beam area of collimator and extender optical fiber 2 is all higher than, the beam diameter is 50~300 μm.
Integrated connection relationship is：
SOI strain beams are fixed on by silicon-glass anodic bonding on glass fixed pole 3, and bonding face is top layer in soi wafer
Silicon 5 deposits the end face for having 9 side of high-reflecting film and the end face for having 9 side of high-reflecting film is deposited with glass fixed pole 3；Glass fixed pole 3 is logical
Silicon-glass anodic bonding is crossed to be fixed on silicon casing 4, bonding face deposited for glass fixed pole 3 have the end face of 8 side of anti-reflection film with
The end face of 4 side of silicon casing；Collimator and extender optical fiber 2 is welded on by solder in the centre bore of silicon casing 4；Wherein, intermediate oxidation
The inner peripheral surface of layer 6 and 5 centre bore of top layer silicon, the deposition of top layer silicon 5 have the end face of I 9 side of high-reflecting film and glass fixed pole 3 to deposit
The end face for having II 12 side of high-reflecting film forms closed cavity one；Inner peripheral surface, the glass fixed pole 3 of 4 centre bore of silicon casing deposit
There is the end face of I 8 side of anti-reflection film, form confined space two with 2 upper surface of collimator and extender optical fiber；High-reflecting film I 9 and high-reflecting film II 12
Between region formed F-P optical interference chambers.
The anti-reflection film constituent material is SiO2/Ta2O5Composite dielectric film；
The high-reflecting film constituent material is SiO2/Ta2O5Composite dielectric film；
Wherein, golden reflectance coating also can be used in the high-reflecting film on SOI strain beams bottom silicon 7；When the high-reflecting film 9 on bottom silicon 7
During using golden reflectance coating, bottom silicon 7 can not deposit anti-reflection film.
Operation principle：
Fiber F-P strain gauge utilizes Fabry-Perot (Fabry-Perot, abbreviation F-P) principle of interference：Work as coherent beam
When being incident on F-P strain sensitive MEMS chips along collimator and extender optical fiber, high-reflecting film and SOI in one side end face of glass fixed pole should
Become multiple reflections between the high-reflecting film of one side end face of beam bottom silicon and form multiple-beam interference, and along backtracking to collimator and extender light
It is fine.It should to the high-reflecting film of the interference output signal of collimator and extender optical fiber and one side end face of glass fixed pole and SOI along backtracking
The length for becoming the microcavity between the high-reflecting film of one side end face of beam bottom silicon is related.Under the action of external strain, glass fixed pole
The length of microcavity between the high-reflecting film of one side end face of high-reflecting film and SOI strain beam bottoms silicon of one side end face changes, and makes
The wavelength or phase obtained back to the interference output signal of collimator and extender optical fiber accordingly changes, it is possible thereby to realize to acting on F-
The external stress strain of P fiber optic strain gages is accurately measured.
A kind of forming method of the fiber F-P strain gauge based on MEMS technology, the method are as follows：
(1) it is etched after photoetching treatment is carried out in the top layer silicon of soi wafer using Deep RIE techniques, in the axis of top layer silicon
To formation circular hole；Etching depth is the thickness of top layer silicon；As shown in Figure 3a and Figure 3b shows；
(2) intermediate oxide layer exposed on soi wafer is removed using wet etching or dry etching, in intermediate oxidation
Layer is axially formed circular hole；As shown in Figure 3c；
(3) deposit high-reflecting film in the left end face of bottom silicon (reflectivity is higher than 95%)；Figure is carried out to the high-reflecting film
Change is handled；Obtain SOI strain beams；As shown in Figure 3d；
(4) in the right end face of glass fixed pole deposition high-reflecting film (reflectivity 95~96%)；The high-reflecting film is carried out
Graphical treatment；As shown in Figure 3 e；
(5) the glass fixed pole that the soi wafer for obtaining step (1)~(3) is obtained with step (4) carries out si-glass sun
Pole is bonded, and bonding face is the left end face of top layer silicon and the right end face of glass fixed pole in soi wafer；As illustrated in figure 3f；
(7) the left end face deposition anti-reflection film of glass fixed pole, and place is patterned to the anti-reflection film after bonding
Reason；As shown in figure 3g；
(8) upper surface of double throwing silicon chips after oxidation carries out photoetching, erodes the oxide layer in litho pattern；Then with
Oxide layer and photoresist are performed etching using Deep RIE techniques as mask, are axially formed circular hole on double throwing silicon chips, obtain
To round-meshed silicon casing；The Circularhole diameter is more than the diameter of collimator and extender optical fiber；As illustrated in figure 3h；
(9) left end face of the silicon casing for obtaining step (8) and glass fixed pole carries out silicon-glass anodic bonding, key
Conjunction face is the left end face of glass fixed pole and the right end face of silicon casing；Then, successively on the right side of SOI strain beam bottom silicon
End face deposits anti-reflection film and passivation layer, and is patterned processing to anti-reflection film and passivation layer, obtains F-P strain sensitive MEMS cores
Piece；As shown in Fig. 3 i and Fig. 3 j；
(10) collimator and extender optical fiber is fixed on by solder on F-P strain sensitive MEMS chips in the circular hole of silicon casing,
Obtain fiber F-P strain gauge of the present invention.As shown in Figure 1；
Wherein, the high-reflecting film graphical treatment uses Lift-off techniques；
The anti-reflection film graphical treatment uses Lift-off techniques.
According to the fiber F-P strain gauge based on MEMS technology that present invention the method processed makes, Fabry-Perot (F-
P) the free spectrum width FSR of chamber is 19.8nm, as shown in fig. 4 a；The three dB bandwidth FWHM of signal spectrum is 0.35nm, as shown in Figure 4 b；
The optics fineness factor (ratio of free spectrum width FSR and three dB bandwidth FWHM) calculated reaches 56.6, significantly larger than existing F-
The optics fineness factor (usually less than 10, exemplary spectrum figure is as shown in Figure 5) of P strain gauges.
It is demodulated according to the fiber F-P strain gauge based on MEMS technology that present invention the method processed makes using wavelength signals
Mode can reach the Wavelength demodulation resolution ratio of 0.2pm, and corresponding wavelength variable quantity is 2.1nm under 200 μ ε effects of strain, should
Variable resolution reaches 0.019 μ ε, and the linearity is better than 0.9998, as shown in Figure 6.Simultaneously as using wavelength signals demodulation mode,
So strain measurement precision is not influenced by bending loss of optical fiber and light source power fluctuation；It and can be by WDM wavelength-division multiplex
Multiple fiber F-P strain gauges based on MEMS technology are concatenated by wavelength-division multiplex+time division multiplexing on a core single mode optical fiber by device,
As shown in Figure 7.Optical Fiber Transmission distance can reach 20 kilometers or more.
The present invention include but not limited to above example, it is every carried out under the principle of spirit of the present invention it is any equivalent
Replacement or local improvement, all will be regarded as within protection scope of the present invention.
Claims (6)
1. a kind of fiber F-P strain gauge based on MEMS technology, it is characterised in that：The fiber F-P strain gauge mainly includes F-P
Strain sensitive MEMS chip (1) and collimator and extender optical fiber (2)；
Wherein, the F-P strain sensitives MEMS chip (1) is made of SOI strain beams, glass fixed pole (3) and silicon casing (4)；
The SOI strain beams include top layer silicon (5), intermediate oxide layer (6) and bottom silicon (7)；Wherein, bottom silicon (7) side
End face deposition has anti-reflection film (8) and passivation layer (10), and the end face deposition of opposite side has high-reflecting film I (9)；Intermediate oxide layer (6) and
Top layer silicon (5) is machined with centre bore, and the centre bore is coaxial, and aperture just as；
The end face deposition of glass fixed pole (3) side has anti-reflection film (8), and the end face deposition of opposite side has high-reflecting film II
(12)；
The anti-reflection film (8), high-reflecting film I (9) and high-reflecting film II (12) all pass through graphical treatment；
The silicon casing (4) is machined with centre bore；
The upper end of the collimator and extender optical fiber (2) is provided with GRIN Lens or equivalent optics；The collimator and extender light
The outgoing collimated light beam diameter of fine (2) is more than fibre core diameter；
Integrated connection relationship is：
The SOI strain beams are fixed on by silicon-glass anodic bonding on glass fixed pole (3), bonding face top layer silicon (5) deposition
The end face for having high-reflecting film I (9) side has the end face of high-reflecting film II (12) side with glass fixed pole (3) deposition；Glass fixed pole
(3) it is fixed on silicon casing (4) by silicon-glass anodic bonding, bonding face has anti-reflection film (8) for glass fixed pole (3) deposition
The end face of side and the end face of silicon casing (4) side；Collimator and extender optical fiber (2) is welded on the center of silicon casing (4) by solder
Kong Zhong；Wherein, the inner peripheral surface of intermediate oxide layer (6) and top layer silicon (5) centre bore, top layer silicon (5) deposition have high-reflecting film I (9)
The end face that there is high-reflecting film II (12) side in the end face of side with glass fixed pole (3) deposition forms closed cavity one；Silicon casing (4)
The inner peripheral surface of centre bore, glass fixed pole (3) deposition have the end face of anti-reflection film (8) side and collimator and extender optical fiber (2) upper end
Face forms confined space two；Region between high-reflecting film I (9) and high-reflecting film II (12) forms F-P optical interference chambers；It is described anti-reflection
The central point of film (8), high-reflecting film I (9) and high-reflecting film II (12) is located on the axis of top layer silicon (5) centre bore；And anti-reflection film
(8), the area of high-reflecting film I (9) and high-reflecting film II (12) is all higher than the outgoing beam area of collimator and extender optical fiber (2).
2. a kind of fiber F-P strain gauge based on MEMS technology according to claim 1, it is characterised in that：It is described anti-reflection
The constituent material of film (8) is SiO2/Ta2O5Composite dielectric film, SiO2/TiO2Composite dielectric film and SiO2/Si3N4Complex media
One kind in film.
3. a kind of fiber F-P strain gauge based on MEMS technology according to claim 1, it is characterised in that：It is described high anti-
Film I (9) is SiO2/Ta2O5Composite dielectric film, SiO2/TiO2Composite dielectric film, SiO2/Si3N4Composite dielectric film and golden reflectance coating
In one kind；The high-reflecting film II (12) is SiO2/Ta2O5Composite dielectric film, SiO2/TiO2Composite dielectric film and SiO2/Si3N4
One kind in composite dielectric film.
4. a kind of microencapsulated F-P pressure sensors based on MEMS technology according to claim 2, it is characterised in that：
When the high-reflecting film I (9) is golden reflectance coating, another side end face of bottom silicon (7) does not deposit anti-reflection film (8) and Direct precipitation golden film
As passivation layer.
5. a kind of preparation method of the fiber F-P strain gauge based on MEMS technology as described in claim 1, it is characterised in that：
The method step is as follows：
(1) it is etched after photoetching treatment is carried out in the top layer silicon of soi wafer using Deep RIE techniques, in the axial shape of top layer silicon
Into centre bore；Etching depth is the thickness of top layer silicon；
(2) intermediate oxide layer exposed on soi wafer is removed using wet etching or dry etching, in intermediate oxide layer
It is axially formed centre bore；
(3) high-reflecting film is deposited in the end face of bottom silicon side；Processing is patterned to the high-reflecting film；Obtain SOI strain beams；
(4) high-reflecting film is deposited in the end face of glass fixed pole side；Processing is patterned to the high-reflecting film；
(5) the glass fixed pole that the soi wafer for obtaining step (1)~(3) is obtained with step (4) carries out si-glass anode key
It closes, the end face for having high-reflecting film side for top layer siliceous deposits in soi wafer deposits the end face for having high-reflecting film side with glass fixed pole；
(7) after bonding glass fixed pole be not bonded with soi wafer side end face deposition anti-reflection film, and to the anti-reflection film into
Row graphical treatment；
(8) upper surface of double throwing silicon chips after oxidation carries out photoetching, erodes the oxide layer in litho pattern；Then with oxidation
Layer and photoresist are performed etching using Deep RIE techniques as mask, are axially formed circular hole on double throwing silicon chips, obtain band
Round-meshed silicon casing；The Circularhole diameter is more than the diameter of collimator and extender optical fiber；
(9) the silicon casing for obtaining step (8) carries out silicon-glass anodic bonding with glass fixed pole, and bonding face is fixed for glass
Pole deposition has the end face of anti-reflection film side and the end face of silicon casing side；Then, successively in the opposite side of SOI strain beam bottom silicon
End face deposits anti-reflection film and passivation layer, and is patterned processing to anti-reflection film and passivation layer, obtains F-P strain sensitive MEMS cores
Piece；
(10) collimator and extender optical fiber is fixed on F-P strain sensitive MEMS chips by solder in the circular hole of silicon casing, obtained
The fiber F-P strain gauge.
6. a kind of preparation method of fiber F-P strain gauge based on MEMS technology according to claim 5, feature exist
In：The graphical treatment corrodes high-reflecting film technique or Lift-off techniques again after using photoetching.
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| CN105371979A (en) * | 2015-05-25 | 2016-03-02 | 赵瑞申 | Optical fiber temperature sensor chip based on MEMS technology |
| CN112513691A (en) * | 2018-07-30 | 2021-03-16 | ams传感器新加坡私人有限公司 | Low height optoelectronic module and package |
| CN108955543B (en) * | 2018-09-10 | 2023-08-18 | 中国计量大学 | Device and method for comparing linearity of F-P micro-displacement measurement system based on cantilever beam strain |
| CN109141271B (en) * | 2018-10-22 | 2023-08-15 | 应急管理部国家自然灾害防治研究院 | Multi-point optical fiber grating hole bottom strain gauge |
| CN112551482B (en) * | 2020-12-10 | 2023-04-18 | 电子科技大学 | Fine control method for free spectrum width of micro rod cavity |
| CN115728512B (en) * | 2021-08-25 | 2024-02-27 | 上海拜安传感技术有限公司 | Optical fiber acceleration sensor and method for forming optical fiber acceleration sensor |
| CN115854889B (en) * | 2023-03-08 | 2023-06-06 | 上海拜安传感技术有限公司 | Contact type displacement measuring device |
| CN116164781B (en) * | 2023-04-21 | 2023-07-07 | 西北工业大学 | MEMS sensor based on optical fiber F-P cavity and packaging method thereof |
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| CN2811965Y (en) * | 2005-04-15 | 2006-08-30 | 南京师范大学 | Optical fiber MEMS pressure sensor packaging structure |
| CN103542926A (en) * | 2013-10-09 | 2014-01-29 | 中国船舶重工集团公司第七一五研究所 | Optical-fiber micro-electro-mechanical hydrophone and production method thereof |
| CN104596435A (en) * | 2014-12-04 | 2015-05-06 | 中国科学院上海微系统与信息技术研究所 | MEMS process based cavity length adjustable optical fiber F-P strain gauge and forming method |
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| CN2811965Y (en) * | 2005-04-15 | 2006-08-30 | 南京师范大学 | Optical fiber MEMS pressure sensor packaging structure |
| CN103542926A (en) * | 2013-10-09 | 2014-01-29 | 中国船舶重工集团公司第七一五研究所 | Optical-fiber micro-electro-mechanical hydrophone and production method thereof |
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