CN103213990A - 用于精炼多晶硅循环真空设备的石墨吸嘴 - Google Patents
用于精炼多晶硅循环真空设备的石墨吸嘴 Download PDFInfo
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Abstract
本发明公开了一种用于精炼多晶硅循环真空设备的石墨吸嘴。该石墨吸嘴由多节石墨管堆栈组合而成，其中，每一石墨管包括一上结合部与一下结合部，上结合部位于该石墨管的上方顶面，下结合部位于该石墨管的下方底面，并与该上结合部对应，使得各石墨管的该上结合部与另一石墨管的该下接合部可相互抵接，并于各石墨管堆栈之后，经由烧结处理使各石墨管融合密接。
Description
技术领域
本发明为一种用于精炼多晶硅循环真空设备的石墨吸嘴。
背景技术
本案申请人于2011年10月24日提出中国台湾发明专利申请号第100138537号，发明名称《真空循环精炼太阳能级多晶硅技术与设备》，其揭露一种将RH炉(循环法真空处理炉)和VD炉(真空脱气炉)合并，制成单嘴双真空循环精炼太阳能级多晶硅设备，并运用此一设备的真空搅拌、扩散与脱气技术，制备太阳能级多晶硅。该单嘴双真空循环精炼太阳能级多晶硅设备包括：上方RH炉的高度真空室与下方VD炉(或合并中频炉)的低度真空室，通过一根单嘴连通管(圆管吸嘴)连接。
其中，RH炉真空处理又称循环法真空炉，其由德国Ruhrstahl/Heraeus二公司共同开发，其主要作业方式透过真空室下方两个导管插入钢水，在抽真空后带动钢水上升至一定高度，再于上升管吹入惰性气体Ar以带动钢液进入真空室接受真空处理，随后经另一下行导管流回钢包。此法已成为先进钢厂的钢水主要真空处理方法。然而目前炼钢所使用的导管内衬吸嘴多为氧化铝、石英(氧化硅)、陶瓷或其它含镁、含硼…的耐火材料所制成，均不适合用来作为精炼太阳能级多晶硅循环真空设备(RH炉)中的吸嘴使用。
发明内容
为使精炼过程中，不受到导管材质的影响，本发明提供一种用于精炼多晶硅循环真空设备的石墨吸嘴，其可避免造成杂质与硅产生化学变化，并可应用于冶金法太阳能级多晶硅真空循环精炼设备(RH循环真空炉)中，连通导管内衬使用的高密度石墨吸嘴及其它内衬高密度石墨圆管耐火材使用。
本发明用于精炼多晶硅循环真空设备的石墨吸嘴，由多节石墨管堆栈组合而成，其中每一石墨管包括一上结合部与一下结合部。上结合部位于该石墨管的上方顶面，下结合部位于该石墨管的下方底面，并与该上结合部对应，使得各石墨管的该上结合部与另一石墨管的该下接合部可相互抵接；并于各石墨管堆栈的后，经由烧结处理使各石墨管融合密接。
又，为使各石墨管在烧结前的相对位置稳定，故再进一步提供上结合部与下结合部对应的各种态样，并可便于安装。该上结合部为平面且该下结合部为对应的平面；或是该上结合部呈由外向内上倾的斜面且该下结合部为由外向内上倾的斜面；或是该上结合部呈由外向内下倾的斜面且该下结合部亦呈由外向内下倾的斜面。
该上结合部也可为一凸块，而该下结合部为对应的一凹槽；或是，该上结合部为一凹槽，而该下结合部为对应的一凸块。该凸块具有一斜面或是一弧面。
进者，各石墨管的上结合部与另一石墨管的下接合部的间距小于5公厘，藉此可利于后续加工以及烧结完成后的稳定性。
又，各石墨管之间可进一步加入沥青、柏油、碳胶、碳糊、碳水(碳泥)、碳灰、硅(Si)胶、硅糊、硅水(泥)、硅灰或水，以具有暂时性的辅助定位效果。
又，较佳者，各石墨管可由石墨圆柱去心制成，便于生产制造。
有关本发明的其它功效及实施例，将会在下文中配合图式说明。
附图说明
图1为本发明实施例的剖面示意图；
图2至图13为本发明实施例的局部放大示意图。
主要组件符号说明：
1……石墨吸嘴；
10……石墨管；
11……上结合部；
12……下结合部；
A……局部；
B……局部。
具体实施方式
请配合参阅各附图所示，其中，图1为本实施例用于精炼多晶硅循环真空设备的石墨吸嘴剖面示意图，图2至图13为局部放大示意图。
本实施例的用于精炼多晶硅循环真空设备的石墨吸嘴1，由多节石墨管10堆栈组合而成，其中每一石墨管10包括一上结合部11与一下结合部12。其中，上结合部11位于该石墨管10的上方顶面，下结合部12位于该石墨管10的下方底面，并与该上结合部11对应，使得各石墨管10的该上结合部11与另一石墨管10的该下接合部12可相互抵接，并于各石墨管10相互堆栈之后，经由烧结处理使各石墨管10融合密接。
上述本实施例可使精炼多晶硅的过程中，不会有其它杂质与硅产生化学变化，可直接应用于冶金法太阳能级多晶硅真空循环精炼设备(RH循环真空炉)中的连通导管内衬使用或是其它需要高密度石墨圆管耐火材使用，提升精炼多晶硅的稳定性。
进者，为增进各石墨管10靠抵组装的稳定性，本实施例提供了数种型式的上结合部11与下结合部12，如图2至图13所示，可使该上结合部11呈平面且该下结合部12为对应的平面；或是该上结合部11呈由外向内上倾的斜面且该下结合部12亦为由外向内上倾的斜面；或是该上结合部11呈由外向内下倾的斜面且该下结合部12亦呈由外向内下倾的斜面。
或者，上结合部11可为一凸块，而下结合部12为对应的一凹槽，该上结合部11为一凹槽，而该下结合部12为对应的一凸块。进者，该凸块可具有一斜面或是一弧面。
藉由图2至图13各种型式的上结合部11与下结合部12，使得各石墨管10在烧结前及烧结进行时的相对位置可以稳定，提升烧结完成后的良率。
又，可进一步使各石墨管10的该上结合部11与另一石墨管10的该下接合部12的在接合靠抵时的间距小于5公厘，藉此利于烧结的进行。
再者，各石墨管10之间可加入沥青、柏油、碳胶、碳糊、碳水(碳泥)、碳灰、硅(Si)胶、硅糊、硅水(泥)、硅灰或水，藉此形成暂时性与安慰性的黏剂，可协助各石墨管10在烧结前位置的稳定。
另外，各石墨管10可由一石墨圆柱去心制成，藉此可提升各石墨管10的稳定性。
由上述内容可得知，本发明利用多个石墨管10所制成的石墨吸嘴1，可依需求进行尺寸或是外型上的设计，并利用堆栈方式，确保整体的安定性，利于连通导管内衬使用或是作为其它耐火材管路的内衬。
虽然本发明已透过上述实施例揭露如上，然其并非用以限定本发明，任何熟习相像技艺者，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，因此本发明的专利保护范围须视本说明书所附的请求项所界定者为准。
Claims (7)
1.一种用于精炼多晶硅循环真空设备的石墨吸嘴，由多节石墨管堆栈组合而成，其特征在于每一石墨管包括：
一上结合部，位于该石墨管的上方顶面；及，
一下结合部，位于该石墨管的下方底面，并与该上结合部对应，使得各石墨管的上结合部与另一石墨管的下接合部相互抵接；
并于各石墨管堆栈之后，经由烧结处理使各石墨管融合密接。
2.如权利要求1所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，该上结合部为平面且该下结合部为对应的平面；或是该上结合部呈由外向内上倾的斜面且该下结合部为由外向内上倾的斜面；或是该上结合部呈由外向内下倾的斜面且该下结合部亦呈由外向内下倾的斜面。
3.如权利要求1所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，该上结合部为一凸块，而该下结合部为对应的一凹槽；或是，该上结合部为一凹槽，而该下结合部为对应的一凸块。
4.如权利要求3所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，该凸块具有一斜面或是一弧面。
5.如权利要求2或4所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，各石墨管的上结合部与另一石墨管的下接合部的间距小于5公厘。
6.如权利要求1所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，各石墨管之间加入沥青、柏油、碳胶、碳糊、碳水、碳灰、硅胶、硅糊、硅水、硅灰或水中的一种。
7.如权利要求1所述的用于精炼多晶硅循环真空设备的石墨吸嘴，其特征在于，各石墨管由一石墨圆柱去心制成。
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| TW101102334A TWI445852B (zh) | 2012-01-20 | 2012-01-20 | A graphite nozzle for refining polysilicon cycle vacuum equipment |
| TW101102334 | 2012-01-20 |
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| CN103213990A true CN103213990A (zh) | 2013-07-24 |
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| CN2012105671728A Pending CN103213990A (zh) | 2012-01-20 | 2012-12-25 | 用于精炼多晶硅循环真空设备的石墨吸嘴 |
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| US (1) | US20130186987A1 (zh) |
| KR (1) | KR101376922B1 (zh) |
| CN (1) | CN103213990A (zh) |
| TW (1) | TWI445852B (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWM434072U (en) * | 2012-01-20 | 2012-07-21 | Sun Power Silicon Co Ltd | Assembled graphite round pipe and graphite crucible formed thereby |
| JP6700836B2 (ja) * | 2016-02-16 | 2020-05-27 | 三菱重工業株式会社 | 接合構造、燃焼器、及び、燃焼装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101935230A (zh) * | 2010-08-27 | 2011-01-05 | 南通京通石墨设备有限公司 | 加工型浸渍石墨管生产方法 |
| CN203034147U (zh) * | 2012-01-20 | 2013-07-03 | 太阳光能股份有限公司 | 组合式石墨管及其组成的石墨坩锅 |
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| CN100582626C (zh) * | 2005-06-09 | 2010-01-20 | 日本坩埚株式会社 | 坩埚式连续熔解炉 |
| US8372482B2 (en) * | 2009-02-27 | 2013-02-12 | Goodrich Corporation | Methods and apparatus for controlled chemical vapor deposition |
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- 2012-12-25 CN CN2012105671728A patent/CN103213990A/zh active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101935230A (zh) * | 2010-08-27 | 2011-01-05 | 南通京通石墨设备有限公司 | 加工型浸渍石墨管生产方法 |
| CN203034147U (zh) * | 2012-01-20 | 2013-07-03 | 太阳光能股份有限公司 | 组合式石墨管及其组成的石墨坩锅 |
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| Publication number | Publication date |
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| KR20130085980A (ko) | 2013-07-30 |
| TWI445852B (zh) | 2014-07-21 |
| TW201331432A (zh) | 2013-08-01 |
| KR101376922B1 (ko) | 2014-03-20 |
| US20130186987A1 (en) | 2013-07-25 |
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