CN103199196A - 布图传导层的方法和器件及其生产的部件 - Google Patents
布图传导层的方法和器件及其生产的部件 Download PDFInfo
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- CN103199196A CN103199196A CN2013100775890A CN201310077589A CN103199196A CN 103199196 A CN103199196 A CN 103199196A CN 2013100775890 A CN2013100775890 A CN 2013100775890A CN 201310077589 A CN201310077589 A CN 201310077589A CN 103199196 A CN103199196 A CN 103199196A
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- lamination
- layer
- conducting shell
- compressible
- embossing
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0523163.4 | 2005-11-14 | ||
| GBGB0523163.4A GB0523163D0 (en) | 2005-11-14 | 2005-11-14 | Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800424695A Division CN101331624A (zh) | 2005-11-14 | 2006-11-14 | 布图传导层的方法和装置及其生产的部件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103199196A true CN103199196A (zh) | 2013-07-10 |
Family
ID=35516877
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800424695A Pending CN101331624A (zh) | 2005-11-14 | 2006-11-14 | 布图传导层的方法和装置及其生产的部件 |
| CN2013100775890A Pending CN103199196A (zh) | 2005-11-14 | 2006-11-14 | 布图传导层的方法和器件及其生产的部件 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800424695A Pending CN101331624A (zh) | 2005-11-14 | 2006-11-14 | 布图传导层的方法和装置及其生产的部件 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090038683A1 (enExample) |
| EP (1) | EP1949469A2 (enExample) |
| JP (1) | JP2009516382A (enExample) |
| KR (1) | KR20080073331A (enExample) |
| CN (2) | CN101331624A (enExample) |
| GB (1) | GB0523163D0 (enExample) |
| WO (1) | WO2007074404A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI511342B (zh) * | 2013-11-29 | 2015-12-01 | Hon Hai Prec Ind Co Ltd | 有機發光二極體的製備方法 |
| CN113745366A (zh) * | 2020-05-14 | 2021-12-03 | 杭州纤纳光电科技有限公司 | 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432723B (en) * | 2005-11-25 | 2010-12-08 | Seiko Epson Corp | Electrochemical cell and method of manufacture |
| GB2432722A (en) * | 2005-11-25 | 2007-05-30 | Seiko Epson Corp | Electrochemical cell and method of manufacture |
| GB2432721B (en) * | 2005-11-25 | 2011-06-22 | Seiko Epson Corp | Electrochemical cell structure and method of fabrication |
| US8343779B2 (en) * | 2007-04-19 | 2013-01-01 | Basf Se | Method for forming a pattern on a substrate and electronic device formed thereby |
| US20090283137A1 (en) * | 2008-05-15 | 2009-11-19 | Steven Thomas Croft | Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions |
| FR2934714B1 (fr) | 2008-07-31 | 2010-12-17 | Commissariat Energie Atomique | Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor. |
| GB2467316B (en) | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
| GB2462693B (en) * | 2008-07-31 | 2013-06-19 | Pragmatic Printing Ltd | Forming electrically insulative regions |
| WO2010017441A2 (en) * | 2008-08-07 | 2010-02-11 | Massachusetts Institute Of Technology | Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films |
| US8586857B2 (en) * | 2008-11-04 | 2013-11-19 | Miasole | Combined diode, lead assembly incorporating an expansion joint |
| US9059351B2 (en) | 2008-11-04 | 2015-06-16 | Apollo Precision (Fujian) Limited | Integrated diode assemblies for photovoltaic modules |
| WO2010061035A1 (en) * | 2008-11-27 | 2010-06-03 | Upm-Kymmene Corporation | Embossing of electronic thin-film components |
| JP2010237375A (ja) * | 2009-03-31 | 2010-10-21 | Mitsui Chemicals Inc | 微細構造体およびそれを用いた光学素子 |
| US20100319765A1 (en) * | 2009-06-17 | 2010-12-23 | Korea University Research And Business Foundation | Photovoltaic devices |
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- 2005-11-14 GB GBGB0523163.4A patent/GB0523163D0/en not_active Ceased
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- 2006-11-14 KR KR1020087014313A patent/KR20080073331A/ko not_active Ceased
- 2006-11-14 JP JP2008540722A patent/JP2009516382A/ja active Pending
- 2006-11-14 US US12/084,749 patent/US20090038683A1/en not_active Abandoned
- 2006-11-14 WO PCT/IB2006/003995 patent/WO2007074404A2/en not_active Ceased
- 2006-11-14 CN CNA2006800424695A patent/CN101331624A/zh active Pending
- 2006-11-14 EP EP06848961A patent/EP1949469A2/en not_active Withdrawn
- 2006-11-14 CN CN2013100775890A patent/CN103199196A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI511342B (zh) * | 2013-11-29 | 2015-12-01 | Hon Hai Prec Ind Co Ltd | 有機發光二極體的製備方法 |
| CN113745366A (zh) * | 2020-05-14 | 2021-12-03 | 杭州纤纳光电科技有限公司 | 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法 |
| CN113745366B (zh) * | 2020-05-14 | 2024-03-12 | 杭州纤纳光电科技有限公司 | 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009516382A (ja) | 2009-04-16 |
| EP1949469A2 (en) | 2008-07-30 |
| GB0523163D0 (en) | 2005-12-21 |
| KR20080073331A (ko) | 2008-08-08 |
| WO2007074404A3 (en) | 2007-11-15 |
| US20090038683A1 (en) | 2009-02-12 |
| WO2007074404A2 (en) | 2007-07-05 |
| CN101331624A (zh) | 2008-12-24 |
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