CN103198925B - 控制中高压电子铝箔蚀孔分布的方法 - Google Patents
控制中高压电子铝箔蚀孔分布的方法 Download PDFInfo
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- CN103198925B CN103198925B CN201310153492.3A CN201310153492A CN103198925B CN 103198925 B CN103198925 B CN 103198925B CN 201310153492 A CN201310153492 A CN 201310153492A CN 103198925 B CN103198925 B CN 103198925B
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- aluminum foil
- aluminium foil
- film
- zno
- zno microsphere
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000011888 foil Substances 0.000 title claims abstract description 29
- 238000009826 distribution Methods 0.000 title claims abstract description 13
- 238000005530 etching Methods 0.000 title abstract 2
- 239000004005 microsphere Substances 0.000 claims abstract description 35
- 230000007797 corrosion Effects 0.000 claims abstract description 21
- 238000005260 corrosion Methods 0.000 claims abstract description 21
- 239000003513 alkali Substances 0.000 claims abstract description 7
- 238000003618 dip coating Methods 0.000 claims abstract description 6
- 239000005030 aluminium foil Substances 0.000 claims description 75
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 abstract description 6
- 239000011259 mixed solution Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 238000002791 soaking Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000012958 reprocessing Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Chemical Treatment Of Metals (AREA)
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CN201310153492.3A CN103198925B (zh) | 2013-04-28 | 2013-04-28 | 控制中高压电子铝箔蚀孔分布的方法 |
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CN103198925A CN103198925A (zh) | 2013-07-10 |
CN103198925B true CN103198925B (zh) | 2015-06-17 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103774193B (zh) * | 2014-01-06 | 2016-09-21 | 广西贺州市桂东电子科技有限责任公司 | 一种中高压电子铝箔表面电沉积弥散锌晶核的方法 |
CN109560271B (zh) * | 2018-11-19 | 2022-02-22 | 肇庆市华师大光电产业研究院 | 一种锂硫电池正极材料及制备方法和应用 |
CN109801789B (zh) * | 2018-12-19 | 2020-06-23 | 乳源瑶族自治县东阳光化成箔有限公司 | 一种利用二段直流电发孔制备中压腐蚀箔的方法 |
CN113234907B (zh) * | 2021-05-10 | 2022-06-07 | 广西正润新材料科技有限公司 | 高容量高强度电容器用中高压电子铝箔及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1458658A (zh) * | 2003-05-26 | 2003-11-26 | 深圳市东阳光化成箔股份有限公司乳源分公司 | 电解电容器阳极铝箔腐蚀工艺 |
CN101976612A (zh) * | 2010-11-04 | 2011-02-16 | 南通华冠电子科技有限公司 | 铝箔腐蚀前处理方法 |
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JP5026778B2 (ja) * | 2006-12-13 | 2012-09-19 | 昭和電工株式会社 | 電解コンデンサ電極用アルミニウム箔とその製造方法、電解コンデンサ用電極材の製造方法、アルミニウム電解コンデンサ用電極材およびアルミニウム電解コンデンサ |
JP5094172B2 (ja) * | 2007-03-20 | 2012-12-12 | 幸子 小野 | エッチング用アルミニウム基材及びそれを用いた電解コンデンサ用アルミニウム電極材 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1458658A (zh) * | 2003-05-26 | 2003-11-26 | 深圳市东阳光化成箔股份有限公司乳源分公司 | 电解电容器阳极铝箔腐蚀工艺 |
CN101976612A (zh) * | 2010-11-04 | 2011-02-16 | 南通华冠电子科技有限公司 | 铝箔腐蚀前处理方法 |
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Effective date of registration: 20220728 Address after: 834034 no.18-032, Industrial Avenue, huyanghe Industrial Park, Xinjiang Uygur Autonomous Region Patentee after: Xinjiang guangtou Guidong Electronic Technology Co.,Ltd. Address before: No. 39, Jiangbei East Road, Hezhou City, Guangxi Zhuang Autonomous Region Patentee before: GUANGXI HEZHOU GUIDONG ELECTRONIC TECHNOLOGY Co.,Ltd. |