CN103187513A - Intensity scattering light-emitting diode (LED) device - Google Patents
Intensity scattering light-emitting diode (LED) device Download PDFInfo
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- CN103187513A CN103187513A CN2013100563007A CN201310056300A CN103187513A CN 103187513 A CN103187513 A CN 103187513A CN 2013100563007 A CN2013100563007 A CN 2013100563007A CN 201310056300 A CN201310056300 A CN 201310056300A CN 103187513 A CN103187513 A CN 103187513A
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- intensity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention discloses an intensity scattering light-emitting diode (LED) device. The rough surface of the front end of an LED epoxy encapsulating layer can achieve the effect of a scattering lens, so that light beams on a normal line are scattered relative to the position of a light source to reduce the intensity of the light reaching human eyes or human bodies, light beams not on the normal line remain unchanged, and more importantly, the total intensity and brightness of the LED remain unchanged. The intensity scattering LED device does not need to reduce the intensity and the brightness of the LED by reducing driving current or using additional dispersing agents, and can adopt pin encapsulation of two or more supporting feet and/or does not have supporting feet, but can adopt surface mounted device (SMD) encapsulation of three or more connecting pads.
Description
Technical field
The present invention relates to light-emitting diode (LED) device, in particular to a kind of intensity scattering LED matrix.
Background technology
The basic structure of light-emitting diode (LED) comprises several elements, as a slice luminescent wafer, can send visible light (as red, orange, Huang, green, indigo plant, purple, be entire spectrum visible light and combination thereof, and/or the emission invisible light, as infrared ray or ultraviolet ray), comprise certain structural housing, and bonding agent (as glue) and conduction coupling line (as gold, aluminium, copper, silver, or certain other alloy).Bonding agent can be used as silver epoxy or silicone epoxy resin, and one or more luminescent wafers can stick together, and is coupled by lead.Epoxy resin can form certain resinoid head, and presents different encapsulation shapes, to obtain different illumination outward appearance and spotlight effect.
Fig. 1 has provided a simple LED(light-emitting diode that the prior art field is known) structure 50.The LED(light-emitting diode) structure 50 has been represented a LED(light-emitting diode) basic structure, this LED(light-emitting diode) structure comprises 1,1 conductive lead wire frame 2 of 1 luminescent wafer, bonding agent 3 and 1 coupling line 4.Conductive lead wire frame 2 outer coating adhesives 3.By bonding agent 3 that one or more wafer 1 is bonding, coupling line 4 is connected to conductive lead wire frame 2, so that electric current to be provided.Epoxy resin 5, or other insulating cement are used for conductive lead wire frame 2 is encapsulated in the circuit.
Fig. 2 has shown the process that arrives human eye 7 and human body from the light beam of LED50 emission.Can the beam intensity of human eye and/or human body generation harm mainly be concentrated on the normal 8, described by light beam 9.
A kind of conventional method that intensity is reduced to lsafety level is to reduce drive current, thereby reduces the intensity of light beam 9 on normal 8.But this method has also reduced total illumination light intensity of LED, makes LED light bright inadequately.
Another kind of conventional method is that diffusant is added in the epoxy resin.
Fig. 3 has shown how light beam 11 sends, and wherein, epoxy resin 10 mixes with diffusant from LED 60.Light beam 11 is spread out.Though the beam intensity on the normal 8 reduces, the LED overall strength reduces too, thereby makes the whole LED emission lack enough brightness and intensity.
The weak point of above-mentioned conventional method is, though level of security can be achieved by reducing intensity, yet the overall strength of LED also be lowered, thereby make LED lack enough brightness.
Therefore, be necessary to adopt the material of easy acquisition to carry out the weak point that design overcomes said method of simplifying of simple copy, thereby reduce the main intensity on the normal, and guarantee that simultaneously the overall strength of LED and brightness do not change.
Summary of the invention
The object of the invention is to reduce when LED illumination arrives the intensity of human eye or human body LED overall strength and brightness is remained unchanged, and a kind of LED matrix of intensity scatter control is provided.
Technical scheme of the present invention is as described below:
A kind of intensity scattering LED matrix comprises:
At least one luminescent wafer;
One conductive lead wire frame, described luminescent wafer is coupled with described conductive lead wire frame and power supply;
Bonding agent is applied to the conductive lead wire frame outward or is used for one or more luminescent wafers are bonding;
One coupling line, coupling line are connected to the conductive lead wire frame, so that electric current to be provided;
One transparent insulation glue shell, above-mentioned luminescent wafer is all encapsulated, and with at least part of encapsulation of above-mentioned conductive lead wire frame, form light-emitting area on the described insulating cement shell, have the dispersing lens that synergic wear light scattering district forms on it, described synergic wear light scattering district comprises grinding layer and etch layer.
Further, described grinding layer and described etch layer are adjacent one another are.
Further, contiguous luminescent wafer is tended in the size of described milling zone and moulding, is the internal layer of described insulating cement shell; And described grinding layer is tended in the size of described etch layer and moulding, forms the skin of described insulating cement shell.
Further, the worn area in described synergic wear light scattering district is limited by size, makes the size of grinding layer and etch layer just greater than the photoimaging district of luminescent wafer emitter region, namely follows the worn area size in synergic wear light scattering district greater than the photoimaging district.
Further, the light-emitting area that forms on the described insulating cement shell is the plane.
Further, described light-emitting area with dispersing lens effect adopts etching method or the method for forming to create formation.
Further, described insulating cement is epoxy resin.
The present invention utilizes the rough surface of its LED epoxy encapsulated layer front end with the light beam on the normal, with respect to the position of described light source, and scattering in addition, be reduced to the intensity of intelligent's eye or human body, simultaneously, the light beam on normal is not constant in maintenance, the more important thing is, keep LED overall strength and brightness to remain unchanged.
Description of drawings
Fig. 1 is a known simple LED(light-emitting diode of prior art field) structural representation;
Fig. 2 has described the prior art field, and how light beam is transmitted into the principle of human eye and human body from LED.
Fig. 3 has described the prior art field, and how light beam is transmitted into the principle of human eye and human body from the epoxy resin LED that is mixed with diffusant.
Fig. 4 is preferred embodiment according to the present invention, the schematic diagram of the intensity scattering LED structure of drafting.
Fig. 5 is preferred embodiment according to the present invention, the schematic diagram from the light beam of intensity scattering LED emission to human eye and human body of drafting.
Luminescent wafer in the drawings, 1; 2, conductive lead wire frame; 3, bonding agent; 4, coupling line; 5, epoxy resin; 7, human eye (and human body); 8, normal; 20, grinding layer; 21, etch layer.
Embodiment
The present invention provides many details with description, the exemplifying embodiment of element and/or method for example, so that the thorough understanding of the reader embodiment relevant with the present invention, yet the personnel that are familiar with association area know that inventive embodiments can carry out lacking under one or more detail conditions, or with other device, system, assembly, method, element, material, parts, and/or other analog carries out together, simultaneously, in other example, known features, material or operation be concrete to be shown or describes in detail, with avoid causing the relevant embodiment of the invention obscure or fuzzy.
From the content that accompanying drawing represents, the reader can know and recognizes novelty of an invention, tissue and using method, and further target and advantage, these accompanying drawings have illustrated one or more preferable inventive embodiments by clarity of illustration, yet these accompanying drawings only have diagram and describe purpose, are not the definition at the invention restriction.
Below in conjunction with accompanying drawing the specific embodiment of the invention is described in detail:
Fig. 4 has represented an intensity scattering LED(light-emitting diode) 100 simplified structures, this structure comprises a basic LED structure and extra new construction.LED basic structure comprises a slice luminescent wafer 1, a conductive lead wire frame 2, bonding agent 3 and a coupling line 4, described luminescent wafer 1 can by operation and electricity connects mode and above-mentioned conductive lead wire frame 2 is coupled, conductive lead wire frame 2 outer coating adhesives 3, and usefulness bonding agent 3 can be bonding with one or more wafer luminescent wafer 1, coupling line 4 is connected to conductive lead wire frame 2, so that electric current to be provided, epoxy resin 5 or other insulating cement are used for conductive lead wire frame 2 is encapsulated in the circuit.
Extra new construction is described as shown in Figure 4 and Figure 5.Formed plane, a synergic wear light scattering district (CALSA) 110 on the LED100, the forming process of CALSA comprises makes one deck grinding layer 20 etch layer 21 adjacent with one deck, the worn area AA of CALSA is limited by size, make the size of grinding layer 20 and etch layer 21 just greater than the photoimaging district (OIA) of luminescent wafer 1 emitter region, namely follow the worn area size in synergic wear light scattering district greater than the photoimaging district, therefore, follow AA〉OIA.
The step of this double-deck worn area AA is provided, comprises grind section light splitting emitter region.Grind the epoxy resin 5 encapsulated layer front ends of LED100, this step is in order to set up a plane for next step, flat platform, and next step that make double-deck worn area AA is etching, formation one deck etch layer 21.By carrying out etching such as laser-induced thermal etching or chemical etching or any suitable known engraving method, create a coarse scattering surface at smooth smooth flat pad, play the effect of dispersing lens.Except etching, other method such as the method for forming also are suitable for.The main purpose of this step is to create a rough surface, makes the worn area AA of CALSA play the effect of dispersing lens, and the worn area AA of rough surface is just even as big as covering the imaging emitter region AA of luminescent wafer 1.
Described grinding layer 20 and described etch layer 21 are adjacent one another are, and contiguous luminescent wafer is tended in the size of described grinding layer 20 and moulding, is the internal layer of described epoxy resin 5 shells; And described grinding layer 20 is tended in the size of described etch layer 21 and moulding, forms the skin of described epoxy resin 5 shells, and the epoxy resin 5 shell light-emitting areas of described formation dispersing lens are the plane.
Fig. 5 illustrates how to transmit a light beam to human eye (and human body) 7 by double-deck worn area AA from intensity scattering LED100.Be not positioned at that light beam 22 on the normal 8 remains unchanged and intensity also remains unchanged.But, originally the light beam 9A on normal 8 and the 9B rough surface dispersing lens that regional AA forms that is worn has now carried out scattering.So this point has improved lsafety level to a great extent, this is because the light beam on the normal 8 is scattered, and makes the intensity that arrives human eye or human body reduce, and LED overall strength and brightness simultaneously remains unchanged.
The present invention is applicable to all LED types, and LED can have with traditional pin package of two or more feets and/or do not have feet, but has surface mount device (SMD) encapsulation of three or more connection gaskets.In addition, except LED, inventive concept of the present invention can be used for other optical device, as from light-emitting diode, and photodiode, phototransistor, optical sensor, reflection sensor, the optoelectronic device of selecting in optical chopper and the receiver module group.
The present invention utilizes the rough surface of its LED epoxy encapsulated layer front end with the light beam on the normal, with respect to the position of described light source, and scattering in addition, be reduced to the intensity of intelligent's eye or human body, simultaneously, the light beam on normal is not constant in maintenance, the more important thing is, keep LED overall strength and brightness to remain unchanged.Do not need among the present invention to reduce drive current or use extra diffusant to reduce LED intensity and brightness, its structure can have the pin package of two or more feets and/or not have feet, but has the SMD(surface mount device of three or more connection gaskets) encapsulation.
One or more elements of describing in the accompanying drawing of the present invention also can be implemented with more independent or integrated mode, or with its removal or be shown as and operate, according to the serviceability in application-specific, simultaneously, enforcement is stored in program or the code in the machine readable medium, carry out or assist to carry out any method and program for the manufacture of device described herein, also spirit according to the invention and category to allow computer.
Therefore, when the present invention described herein was relevant with specific embodiment, above-mentioned openly may the needs necessarily revised, various changes and replacement, simultaneously, in some examples, used some feature of inventive embodiments, and not corresponding use does not depart from the further feature of foregoing invention scope and spirit.Therefore, can repeatedly improve, make particular condition or certain material base region according to the invention and spirit.Purpose of the present invention is not subject to particular term and/or the open specific embodiment as the best enforcement of the present invention template of use, but the present invention will comprise any embodiment and equivalent that all meets the scope of the invention that reach.
For example, LED(light-emitting diode) wafer can be connected by single conductor or many leads.Product has one or several wafer, can be depending on its desirable characteristics, and the conductive lead wire frame can have two or more feets, or nothing (surface mounted device).In addition, pigment, diffusant or fluorescent material also can add the LED(light-emitting diode to) or epoxy resin layer in.Pigment makes the LED(light-emitting diode) or epoxy resin layer seem more colorful; Diffusant permission whole LED (light-emitting diode) or epoxy resin layer are luminous; Fluorescent material can change wavelength, and then changes light emitted color.Light emissive porwer and emission color are determined by wafer, but wafer is not made color, but the fluorescent material that adds can change and revise color.
The foregoing description of the embodiment of the invention comprises the content of describing in the summary, is not to be intended to exhaustively maybe invention is restricted in the precise forms disclosed herein.Specific embodiment described herein only is used for explanation with giving an example, and, according to the understanding of being familiar with the correlative technology field personnel and understanding, can carry out various equivalences in meeting spirit and scope of the invention improves, as indicated such, can make this type of improvement to the present invention according to the foregoing description of the embodiment of the invention, and these improvement will be contained within the spirit and scope of the present invention.
Claims (7)
1. intensity scattering LED matrix comprises:
At least one luminescent wafer (1);
One conductive lead wire frame (2), described luminescent wafer (1) is coupled with described conductive lead wire frame (2) and power supply;
Bonding agent (3) is applied to conductive lead wire frame (2) outward or is used for one or more luminescent wafers (1) are bonding;
One coupling line (4), coupling line (4) is connected to conductive lead wire frame (2), so that electric current to be provided;
One transparent insulation glue shell, with all encapsulation of above-mentioned luminescent wafer (1), and with at least part of encapsulation of above-mentioned conductive lead wire frame (2), form light-emitting area on the described insulating cement shell, have the dispersing lens that synergic wear light scattering district forms on it, described synergic wear light scattering district comprises grinding layer (20) and etch layer (21).
2. a kind of intensity scattering LED matrix according to claim 1 is characterized in that, described grinding layer (20) and described etch layer (21) are adjacent one another are.
3. a kind of intensity scattering LED matrix according to claim 1 is characterized in that, contiguous luminescent wafer (1) is tended in the size of described milling zone and moulding, is the internal layer of described insulating cement shell; And described grinding layer (20) is tended in the size of described etch layer (21) and moulding, forms the skin of described insulating cement shell.
4. a kind of intensity scattering LED matrix according to claim 1, it is characterized in that, the worn area in described synergic wear light scattering district is limited by size, make the size of grinding layer (20) and etch layer (21) just greater than the photoimaging district of luminescent wafer (1) emitter region, namely follow the worn area size in synergic wear light scattering district greater than the photoimaging district.
5. a kind of intensity scattering LED matrix according to claim 1 is characterized in that the light-emitting area that forms on the described insulating cement shell is the plane.
6. a kind of intensity scattering LED matrix according to claim 1 is characterized in that, described light-emitting area with dispersing lens effect adopts etching method or the method for forming to create and forms.
7. a kind of intensity scattering LED matrix according to claim 1 is characterized in that, described insulating cement is epoxy resin (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100563007A CN103187513A (en) | 2013-02-22 | 2013-02-22 | Intensity scattering light-emitting diode (LED) device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100563007A CN103187513A (en) | 2013-02-22 | 2013-02-22 | Intensity scattering light-emitting diode (LED) device |
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| CN103187513A true CN103187513A (en) | 2013-07-03 |
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| CN2013100563007A Pending CN103187513A (en) | 2013-02-22 | 2013-02-22 | Intensity scattering light-emitting diode (LED) device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104344344A (en) * | 2013-08-06 | 2015-02-11 | 鸿富锦精密工业（深圳）有限公司 | Lens and light source device using same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071232A (en) * | 2006-05-10 | 2007-11-14 | 奇美电子股份有限公司 | Planar lightsource device and its mkaing method, and liquid crystal display device with same |
| CN102376854A (en) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | Light emitting device and lighting system having the same |
| WO2012117974A1 (en) * | 2011-02-28 | 2012-09-07 | 日亜化学工業株式会社 | Light emitting device |
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2013
- 2013-02-22 CN CN2013100563007A patent/CN103187513A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071232A (en) * | 2006-05-10 | 2007-11-14 | 奇美电子股份有限公司 | Planar lightsource device and its mkaing method, and liquid crystal display device with same |
| CN102376854A (en) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | Light emitting device and lighting system having the same |
| WO2012117974A1 (en) * | 2011-02-28 | 2012-09-07 | 日亜化学工業株式会社 | Light emitting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104344344A (en) * | 2013-08-06 | 2015-02-11 | 鸿富锦精密工业（深圳）有限公司 | Lens and light source device using same |
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Application publication date: 20130703 |