CN104681698B - A kind of decoration LED encapsulation structure - Google Patents
A kind of decoration LED encapsulation structure Download PDFInfo
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- CN104681698B CN104681698B CN201510004145.3A CN201510004145A CN104681698B CN 104681698 B CN104681698 B CN 104681698B CN 201510004145 A CN201510004145 A CN 201510004145A CN 104681698 B CN104681698 B CN 104681698B
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- light
- fluorescent material
- led
- mist
- photosphere
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 31
- 238000005034 decoration Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004005 microsphere Substances 0.000 claims abstract description 21
- 239000003595 mist Substances 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 238000004020 luminiscence type Methods 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 2
- 238000000889 atomisation Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000835 fiber Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 claims 1
- 239000011258 core-shell material Substances 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008451 emotion Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of decoration LED encapsulation structure, including carborundum heat-radiating substrate, the LED luminescence chips being arranged on the substrate, what is covered in the LED chip does not contain the resin bed of fluorescent material, the encapsulation glue-line doped with fluorescent material on the resin bed, and the mist photosphere on the encapsulation glue-line doped with fluorescent material.The mist photosphere includes the Optical Microsphere of resin glue and some core shell structures being scattered in the resin glue, the Optical Microsphere has transparent core and the translucent shell around the core, and arranged in a manner of neat, tiling, the present invention can make light become soft, while the heat of LED chip will not be had an impact to the characteristic of fluorescent material.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure, particularly a kind of LED encapsulation structure for applying to decoration.
Background technology
LED is referred to as forth generation light source, the significant progress that LED illumination technology has been achieved with, and the raising of epitaxy technology makes
The cost for obtaining LED chip substantially reduces, and LED has with holding the superior quality come, such as luminous efficiency height, becomes clear, is new one
The green light source in generation, LED have a extensive future illumination application.LED light source, there are energy-conserving and environment-protective（Electric light transformation efficiency approaches
60%）, safety, long lifespan（Up to 100,000 hours）, low-power consumption, low-heat, high brightness, light beam concentrate, the features such as, have been applied in
The field such as various instructions, display, decoration, backlight, general lighting.
Fig. 1 is the LED encapsulation structure of prior art, sets a reflector 3 on substrate 2, is pasted on the encapsulating face of substrate 2
Luminescence chip 1, reflector 3 are set around luminescence chip 1, doped with the luminous core of the fully enclosed covering of encapsulation glue-line 4 of fluorescent material 6
Piece 1, lens 5 are set in reflector 3 and doped with the top of the encapsulation glue-line 4 of fluorescent material 6, luminescence chip 1 can select respectively
The chip of kind glow color, such as blue light, feux rouges, green luminescence chip, encapsulating structure has luminous efficiency height, high brightness in this
The characteristics of.However, it is less demanding to illuminating in some special occasions, such as bedroom, aquarium etc., but will to illumination atmosphere
Very high occasion is sought, LED light device also needs to further improve, such as the light that bedroom need not become clear during sleep, and such as
Fruit can build a kind of soft illumination condition of warmth in bedroom, then the rest to people, mood, emotion between husband and wife be all
Facilitation can be played.For example build a kind of dim blue atmosphere in aquarium again, then can make visitor more can body face it
Border and body and mind appreciate the secret of ocean pleasantly.On the other hand, LED encapsulation structure as shown in Figure 1, due to the envelope of fluorescent material 6
The encapsulation of glue-line 4 and 1 top of LED chip are filled, heat caused by LED can produce bad to the characteristic of fluorescent material 6 in encapsulation glue-line 4
Influence, have impact on the characteristic of fluorescent material 6.
The content of the invention
In order to solve the above problems, the present invention provides a kind of decoration LED encapsulation structure, including carborundum heat-radiating substrate,
Reflector on the substrate, it is arranged on the substrate and exists positioned at the LED luminescence chips at reflector center, its feature
In：The LED encapsulation structure also include positioned at LED chip light extraction face side mist photosphere, the mist photosphere include resin glue with
And it is scattered in some Optical Microspheres in the resin glue.Covered with the resin bed for not containing fluorescent material in the LED chip, with
And the encapsulation glue-line doped with fluorescent material on the resin bed, the mist photosphere is positioned at described doped with fluorescent material
Encapsulation glue-line on.
The present invention also provides a kind of decoration LED encapsulation structure, including carborundum heat-radiating substrate, on the substrate
Reflector, it is arranged on the substrate and positioned at the LED luminescence chips at reflector center, positioned at LED chip light extraction face side
Mist photosphere, the mist photosphere include resin glue and some Optical Microspheres for being scattered in the resin glue, the microballoon be core-
Shell structure, including light transmittance the shell of glass core and light transmittance between 60-70% more than 90%, the microballoon entirety particle diameter
Between 1.5-2.5 millimeters, the thickness of the shell is between 150-250 microns.Covered with not containing phosphor in the LED chip
The resin bed of material, and the encapsulation glue-line doped with fluorescent material on the resin bed, the mist photosphere is positioned at described
On the encapsulation glue-line of fluorescent material.
Blue chip, red light chips or green glow chip can be selected in above-mentioned LED luminescence chips.
Brief description of the drawings
Fig. 1 is the LED encapsulation structure of prior art in one.
Fig. 2 is the structure chart of the LED encapsulation structure of one embodiment of the invention.
Fig. 3 is the structure chart of the Optical Microsphere of one embodiment of the invention.
Embodiment
To cause the present invention high-visible, it is readily appreciated that, the present invention will be discussed in detail with reference to the drawings and specific embodiments.
Fig. 2 is the sectional view of the LED encapsulation structure of one embodiment of the invention, and substrate 2 is with high heat conduction and thermal diffusivity
The silicon carbide substrate of energy, the main thus substrate of heat caused by LED chip are passed to and distributed.Formed with encapsulation LED core on substrate 2
The indispensable line layer of piece, chip connecting structure that the design of the line layer can encapsulate as needed and determine, due to this circuit
The design of layer is all well known to those skilled in the art, so in this description will be omitted.Integration is set on carborundum heat-radiating substrate 2
Reflector 3, the inner surface of reflector 3 is inclined-plane.LED chip 1 is pasted with carborundum heat-radiating substrate 2, in reflector, should
The type of LED chip can be determined by use environment, such as in Sea World, blue luminescence chip can be selected to set off ocean by contrast
Atmosphere.
Directly encapsulation is doped with unlike the packaging plastic of fluorescent material 6 above LED chip from prior art, in LED core
Covering does not contain the insulating resin layer 10 of fluorescent material 6, and envelope of the covering doped with fluorescent material 6 on insulating resin layer 10 above piece
Glue 4 is filled, identical colloid material can be selected in the insulating resin layer 10 and the packaging plastic 4 doped with fluorescent material 6 for not containing fluorescent material 6
Material.Due to having selected high heat conduction, the high silicon carbide substrate 2 to radiate, the heat of chip mainly scatters and disappears from substrate side, so covering
The insulating resin layer 10 of LED chip can use the not high ordinary resin material of heat conduction.Insulating resin layer 10 separated LED chip with
Doped with the encapsulation glue-line 4 of fluorescent material 6 so that, will not mistake doped with the packaging plastic 4 of fluorescent material 6 when LED chip works
Heat, the fluorescent characteristic of fluorescent material 6 is not interfered with thus.
Mist photosphere 9 is formed on the packaging plastic 4 doped with fluorescent material 6, the mist photosphere 9 is by the light with nucleocapsid structure
Microballoon 7, which is scattered in resin glue 8, to be formed, and the Optical Microsphere 7 of the nucleocapsid structure is arranged in a manner of neat, tiling.It is each
Tiny interval can be left between the Optical Microsphere 7 of nucleocapsid structure.
The Optical Microsphere 7 of the nucleocapsid structure includes surrounding with high transmission rate, the spherical nuclei 71 of the high grade of transparency and contact
The low-transmittance of the spherical nuclei 71, the shell 72 of low transparency form.The spherical nuclei 71 and shell 72 can be glass materials, ball
For the light transmittance of forming core more than 90%, the measurement standard of light transmittance is luminous intensity and incidence that the material of 1.1 mm of thickness passes through
The ratio between luminous intensity.The light transmittance of shell 72 is between 60-70%.When the light of LED reflection is by the mist photosphere 9, on the one hand, pass through
Will not be micro- in the optics with nucleocapsid structure from the atomizing on the surface of Optical Microsphere 7 with nucleocapsid structure of main light emission
Misty aura feature occurs in the surface of ball 7；On the other hand, can be formed into the ball of the high grade of transparency inside microballoon 7
Similar to the effect of light buffering, a part of light can be oozed out by inner core 71 through translucent shell 72, and this causes the effect of atomization
Fruit is more preferable, and light is softer, warm, and light will not be too bright, dazzling.It should be noted that the diameter of Optical Microsphere 7 should be enough
Greatly, if the diameter of Optical Microsphere 7 is too small for example in Nano grade, micron level, hundred micron levels, because particle diameter is too small and light
Wavelength it is close, the phenomenon that light bypasses just occurs so that light penetration is too high, dim effect would not occurs, instead
Come over microballoon 7 diameter it is too big for example more than a centimetre rank, then light will be too dim, therefore by design, Optical Microsphere 7
Diameter effect in the range of 1.5-2.5 millimeters is best, preferably 2 millimeters, the mist photosphere 9 and CN103811634 of foregoing description,
The Chinese publication such as CN202817033U, CN102593280A, CN101814562, CN101979914A, CN101858570A
It is disclosed to be existed using the micro-sphere structure of nanometer or micro-meter scale raising light emission rate or light-emitting uniformity or raising optics diffusion function
Every aspect is essentially different.
The parameter in the Optical Microsphere 7 of the nucleocapsid structure between spherical nuclei 71 and shell 72 is described again, if spherical nuclei 71
Particle diameter R it is too big, and the thickness d of shell 72 is too small, then atomizing is cut down, if the particle diameter R of spherical nuclei 71 is too small, and shell 72
Thickness d it is excessive, then the light cushioning effect unobvious of ball 71, as the selection of compromise, set the 7 overall grain of Optical Microsphere
Footpath (R+2d) is between 1.5-2.5 millimeters, and the thickness d of shell 72 is between 150-250 microns, i.e., the thickness of shell 72 is almost micro-
/ 10th of 7 overall particle diameter of ball.
The upper surface of mist photosphere 9 and the upper surface flush of reflector 3, and in the upper surface of mist photosphere 9 and reflector 3
Planar lens 5 is set, and compared with general convex lens, planar lens 5 does not possess the characteristics of light beam concentration, and this is advantageous to the present invention
Effect.
Above-mentioned one embodiment described in detail, those skilled in the art be able to should understand advantages of the present invention it
Place；But above-described embodiment is only a concrete form for realizing present inventive concept, can not limit the present invention, with present invention essence
The embodiment of refreshing consistent obvious deformation should also be as the design for belonging to the present invention.
Claims (1)
1. a kind of decoration LED encapsulation structure, including carborundum heat-radiating substrate, the reflector on the substrate, are arranged at
On the substrate and positioned at the LED luminescence chips at reflector center, it is characterised in that：The LED encapsulation structure also includes being located at
The mist photosphere of LED luminescence chip exiting surfaces side, if the mist photosphere includes resin glue and is scattered in the resin glue
Dry Optical Microsphere, covered with the resin bed for not containing fluorescent material on the LED luminescence chips, and on the resin bed
The encapsulation glue-line doped with fluorescent material, the mist photosphere positioned at it is described doped with the encapsulation glue-line of fluorescent material on, institute
It can be blue chip, red light chips or green glow chip to state LED luminescence chips, due to having selected high heat conduction, the high carbon to radiate
SiClx heat-radiating substrate, the heat of chip mainly dissipate from substrate side, so the insulating resin layer of covering LED luminescence chips can be adopted
With the not high ordinary resin material of heat conduction, insulating resin layer has separated LED luminescence chips and the encapsulation glue-line doped with fluorescent material,
So that when LED luminescence chips work, it will not be overheated doped with the packaging plastic of fluorescent material, not interfere with fluorescent material thus
Fluorescent characteristic, Optical Microsphere include with high transmission rate, the high grade of transparency spherical nuclei and contact surround spherical nuclei it is low
The shell composition of light rate, low transparency, spherical nuclei and shell can be glass materials, and the light transmittance of spherical nuclei is more than 90%, thoroughly
The measurement standard of light rate is the ratio between the luminous intensity that the material of 1.1 mm of thickness passes through and incident luminous intensity, and the light transmittance of shell exists
Between 60-70%, when the light of LED reflection is by mist photosphere, on the one hand, by that will not have nucleocapsid structure from main light emission
The atomizing on Optical Microsphere surface, misty aura feature occurs on the Optical Microsphere surface with nucleocapsid structure, separately
On the one hand, effect similar to buffer fiber, a part of light can be formed into the ball of the high grade of transparency inside Optical Microsphere
It can be oozed out by inner core through translucent shell, this make it that the effect of atomization is more preferable, and light is softer, warm, and optical fiber will not be too
Bright, dazzling, the particle diameter R of spherical nuclei is too big, and the thickness d of shell is too small, then atomizing is cut down, and the particle diameter R of spherical nuclei is too
It is small, and the thickness d of shell is excessive, then the light cushioning effect unobvious of spherical nuclei, as the selection of compromise, set Optical Microsphere whole
Body particle diameter between 1.5-2.5 millimeters, the thickness d of shell between 150-250 microns, the upper surface of mist photosphere and reflector it is upper
Surface flushes, and sets planar lens in the upper surface of mist photosphere and reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510004145.3A CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510004145.3A CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104681698A CN104681698A (en) | 2015-06-03 |
| CN104681698B true CN104681698B (en) | 2017-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510004145.3A Active CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN104681698B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134522A (en) * | 2016-02-26 | 2017-09-05 | 晶元光电股份有限公司 | Light-emitting device |
| US10825970B2 (en) | 2016-02-26 | 2020-11-03 | Epistar Corporation | Light-emitting device with wavelength conversion structure |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
| CN111458738B (en) * | 2020-04-13 | 2023-04-28 | 同济大学 | Scintillator device with surface micro-lens array structure regulated and controlled and preparation thereof |
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| US20040207311A1 (en) * | 2003-04-18 | 2004-10-21 | Jung-Pin Cheng | White light emitting device |
| JP2010021497A (en) * | 2008-07-14 | 2010-01-28 | Sanyo Electric Co Ltd | Semiconductor light-emitting device |
| TW201010125A (en) * | 2008-08-22 | 2010-03-01 | Univ Nat Taiwan Science Tech | White light light-emitting diodes |
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| JP2002280614A (en) * | 2001-03-14 | 2002-09-27 | Citizen Electronics Co Ltd | Light emitting diode |
| WO2007041902A1 (en) * | 2005-10-12 | 2007-04-19 | Xuelin Li | A heat conducting and dissipating structure for white light led package |
| CN104465964A (en) * | 2014-11-14 | 2015-03-25 | 司红康 | LED packaging structure |
| CN204391153U (en) * | 2014-11-14 | 2015-06-10 | 司红康 | A kind of LED encapsulation structure |
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| CN104681698A (en) | 2015-06-03 |
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Inventor after: Li Guohong Inventor before: Si Hongkang |
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Effective date of registration: 20171115 Address after: 237000 room 509, B building, science and technology entrepreneurship center, Lu'an economic and Technological Development Zone, Anhui Applicant after: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd Address before: 237000 Anhui Province, Lu'an city science and technology innovation center room 001 (the intersection of three road and Gaocheng Road) Applicant before: Si Hongkang |
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Effective date of registration: 20191224 Address after: No.36 Shengli West Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu Province Patentee after: Nanjing Gehai New Energy Co., Ltd. Address before: Room 509, Building B, Science and Technology Entrepreneurship Service Center, Luan Economic and Technological Development Zone, Anhui Province Patentee before: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd |
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Effective date of registration: 20210105 Address after: 221600 Zhangliang Road North, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: XUZHOU TAIFENG PUMP INDUSTRY Co.,Ltd. Address before: No.36, Shengli West Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu, 210000 Patentee before: NANJING GEHAI NEW ENERGY Co.,Ltd. |