CN103187235B - The discharge assembly of substrate processing apparatus, chamber device and PECVD device - Google Patents
The discharge assembly of substrate processing apparatus, chamber device and PECVD device Download PDFInfo
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- CN103187235B CN103187235B CN201110460216.2A CN201110460216A CN103187235B CN 103187235 B CN103187235 B CN 103187235B CN 201110460216 A CN201110460216 A CN 201110460216A CN 103187235 B CN103187235 B CN 103187235B
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Abstract
The present invention proposes a kind of discharge assembly of substrate processing apparatus, comprising: the driving power with first end and the second end; There is the insulation barrier part along the through air vent hole of its thickness direction; Multiple first electrode, the first electrode is connected with the first end of driving power and is located on the lower surface of insulation barrier part respectively; With multiple second electrode, the second electrode is connected with the second end of driving power and is located at respectively on the upper surface of insulation barrier part and arranges in pairs with multiple first electrode; The first electrode wherein in each electrode pair and the second electrode stagger on the thickness direction of insulation barrier part, are positioned at below insulation barrier part with the plasma discharge making the first electrode and the second electrode produce.Adopt dielectric barrier discharge (DBD) according to discharge assembly of the present invention, there is high discharge voltage, and structure is simple, be easy to control.The present invention also proposes a kind of chamber device and has the PECVD device of this chamber device.
Description
Technical field
The present invention relates to a kind of discharge assembly of substrate processing apparatus, there is the chamber device of this discharge assembly, and there is PECVD (plasma enhanced chemical vapor deposition) equipment of this chamber device.
Background technology
Along with the development of plasma technique, plasma enhanced chemical vapor deposition (PECVD) equipment has been widely used in the technique manufacturing integrated circuit (IC) or photovoltaic (PV) product.In various PECVD device, due to parallel plate capacitor coupled plasma (CapacitivelyCoupledPlasma, be called for short CCP) and remote microwave activated plasma (ECR) Large-Area-Uniform plasma can be produced, and the mode of production of chain type can be met, in solar cell fabrication process, obtain large-scale application.
The typical CCP device that conventional P ECVD equipment adopts, process gas enters uniform flow room from air inlet.Indoor at uniform flow, flow field, the flow velocity of process gas are homogenized, afterwards uniformly by the pore of top electrode shower plate, enter into chamber.Top electrode connects radio-frequency power supply, and bottom electrode is placed and kept certain technological temperature on the heaters and ground connection.The substrate of deposit film is needed to place on the bottom electrode.According to the difference of process gas, the thin film composition of deposition is also not quite similar.General PV industry process gas is SiH
4and NH
3, what obtain be film is SiNx.
Traditional CCP device, operating air pressure scope is narrow, is generally tens handkerchiefs to handkerchief up to a hundred, thus higher for the vacuum system configuration requirement of equipment.In addition, the large production capacity of current industrial pursuit, in order to improve the density producing plasma, driving power also develops from tens kilo hertzs to megahertz gradually, but due to the increase of driving power frequency, in plasma, standing wave effect is obvious gradually, thus limits the development of equipment to larger production capacity.Consider from technological angle, because the substrate of required deposition is positioned on bottom electrode, so in the process of film forming, plasma bombardment also can be caused to cause the problems such as the impaired and Grain size controlling of film.
At present, the setting that solar cell manufacturing industry is conventional is remote microwave activated plasma (ECR) device.First, process gas enters chamber from air inlet, under the excitation of 2.45G microwave, produce plasma, and produce magnetic field by DC coil, promote charged particle cyclotron resonance excitation, there is in plasma chemically active gas and react in plasma, and function film required on depositing on substrate.The waste gas produced after technique is drained by bleeding.
Compared with CCP device, ECR device has advantage in production capacity, but the control of microwave source is very complicated, and cost intensive, limit its application and development.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.For this reason, one object of the present invention is the discharge assembly proposing a kind of substrate processing apparatus, and this discharge assembly adopts dielectric barrier discharge (DBD), has high discharge voltage, and structure is simple, is easy to control.
Another object of the present invention is to propose a kind of chamber device with above-mentioned discharge assembly.
Another object of the present invention is to propose a kind of PECVD device with above-mentioned chamber device.
The discharge assembly of the substrate processing apparatus of embodiment according to a first aspect of the present invention, comprising: driving power, and described driving power has first end and the second end; Insulation barrier part, described insulation barrier part has along the through air vent hole of its thickness direction; Multiple first electrode, described first electrode is connected with the first end of described driving power and is located on the lower surface of described insulation barrier part respectively; With multiple second electrode, described second electrode is connected with the second end of described driving power and is located at respectively on the upper surface of described insulation barrier part and arranges in pairs with described multiple first electrode; Described first electrode wherein in each electrode pair and the second electrode stagger on the thickness direction of described insulation barrier part, are positioned at below described insulation barrier part with the plasma discharge making described first electrode and the second electrode produce.
According to the discharge assembly of the embodiment of the present invention, adopt dielectric impedance (DBD) electric discharge that insulation barrier part is set between the first and second electrodes, effectively can improve the discharge voltage between the first electrode and the second electrode.Driving power can adopt higher frequency.Insulation barrier part can be avoided producing arc light between the first electrode and the second electrode in discharge process.In addition, driving power applies voltage between the first and second electrodes, can produce plasma discharge below insulation barrier part.It is simple that the discharge assembly of the embodiment of the present invention has structure, be easy to control and driving power Application Range extensive, overcome the restriction of conventional electrode configurations, without the need to using electrode as the platform placing substrate.
In one embodiment of the invention, the upper surface of described insulation barrier part is provided with multiple groove, and described multiple second electrode is located in described groove respectively correspondingly.
In one embodiment of the invention, described air vent hole is divided into many groups, described many group air vent holes are arranged along the lateral separation of described insulation barrier part, described first electrode is arranged along the lateral separation of described insulation barrier part, described second electrode is arranged along the lateral separation of described insulation barrier part, between described first electrode adjacent one another are and described second electrode, be respectively equipped with air vent hole described in a group, often organize air vent hole and comprise multiple air vent hole.
In one embodiment of the invention, described many group air vent holes are arranged at equal intervals along the transverse direction of described insulation barrier part, described first electrode is arranged at equal intervals along the transverse direction of described insulation barrier part, and described second electrode is arranged at equal intervals along the transverse direction of described insulation barrier part.Thus, air vent hole is distributed on the whole area of insulation barrier part relatively uniformly, improves the uniformity of process gas.
In one embodiment of the invention, described insulation barrier part is rectangular dielectric plate, described first electrode and described second electrode are strip, described first electrode on the lower surface of described rectangular dielectric plate respectively along the longitudinal extension of described rectangular dielectric plate, described second electrode on the upper surface of described rectangular dielectric plate respectively along the longitudinal extension of described rectangular dielectric plate.Thus, increase the area discharged between the first electrode and the second electrode further, improve the uniformity of plasma.
In one embodiment of the invention, described insulation barrier part is made up of pottery, quartz or polytetrafluoroethylene.
In one embodiment of the invention, described driving power is low-frequency power, high frequency electric source, one of radio-frequency power supply and very high frequency(VHF) power supply.Therefore, wide according to the driving power Application Range of the discharge assembly of the embodiment of the present invention, when selecting high-frequency driving power, standing wave effect when this kind of multielectrode discharging structure can effectively be avoided discharging in plasma.
The chamber device of embodiment according to a second aspect of the present invention, comprising: chamber body, has processing chamber in described chamber body, and described chamber body has air inlet and gas outlet and substrate import and substrate outlet; Heating and heat-insulating device, described heating and heat-insulating device is located in described processing chamber; Uniform flow room body, in the body of described uniform flow room, there is uniform flow room, described uniform flow room body to be located in described processing chamber and to be positioned at above described heating and heat-insulating device, described uniform flow room body is provided with the opening relative with described heating and heat-insulating device, and described uniform flow room body is in communication with the outside by the air inlet of described chamber body; Transmitting device, described transmitting device to be located in described processing chamber and for being imported into by substrate and spreading out of described processing chamber between described uniform flow room body and described heating and heat-insulating device; And discharge assembly, described discharge assembly is the discharge assembly of the substrate processing apparatus of above-mentioned first aspect embodiment, and the opening part that the insulation barrier part of wherein said discharge assembly is located at described uniform flow room body is to close described opening and described uniform flow room is communicated with described processing chamber by described air vent hole.
According to the chamber device of the embodiment of the present invention, discharge assembly adopts DBD electric discharge, driving power can apply higher frequency between the first and second electrodes, produce a large amount of plasma, the insulation barrier part of discharge assembly is effectively avoided producing standing wave effect in the plasma, thus improve the utilance of process gas, increase production capacity.And substrate is in the below of discharge assembly, avoid plasma to the injury of substrate film forming, improve substrate quality of forming film.In addition, in low pressure situation, insulation barrier part can also prevent from producing arc light between first electrode and the second electrode of discharge assembly, and then prevents chamber device from suffering damage, and improves the useful life of chamber device.The chamber device of the embodiment of the present invention can also improve the efficiency of transmission of substrate by transmitting device, improve the service efficiency of chamber device.In addition, this chamber device structure is simple, and cost is low.
In one embodiment of the invention, the driving power of described discharge assembly is located at the outside of described chamber body.Be convenient to like this control driving power to the frequency applied between the first electrode and the second electrode.
In one embodiment of the invention, described substrate import department is provided with the inlet valve for opening and closing described substrate import, and described substrate exit is provided with the outlet valve for opening and closing the outlet of described substrate.Facilitate importing into and spreading out of of substrate.In technical process, import and outlet are all closed, and prevent air from entering in processing chamber.After technical process terminates, import and outlet are all opened, and facilitate importing into and spreading out of of substrate.
In one embodiment of the invention, described transmitting device comprises multiple travelling gears that the transverse direction along chamber body is intervally installed.
The PECVD device of embodiment according to a third aspect of the present invention, comprises the chamber device of above-described embodiment.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the schematic diagram of the discharge assembly of substrate processing apparatus according to the embodiment of the present invention;
Fig. 2 is the floor map of discharge assembly shown in Fig. 1;
Fig. 3 is the schematic diagram of the modification of discharge assembly according to the embodiment of the present invention; And
Fig. 4 is the schematic diagram of the chamber device according to the embodiment of the present invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, except as otherwise noted, the implication of " multiple " is two or more.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
First the discharge assembly of the substrate processing apparatus according to the embodiment of the present invention is described below in conjunction with accompanying drawing.
As shown in Figure 1, driving power 110, first electrode 120, second electrode 130 and insulation barrier part 140 is comprised according to the discharge assembly 100 of the substrate processing apparatus of the embodiment of the present invention.
Driving power 110 has first end (left end in Fig. 1) and the second end (right-hand member in Fig. 1).First electrode 120 is connected with the first end of driving power 110 and is located on the lower surface of insulation barrier part 140.Second electrode 130 is connected with the second end of driving power 110 and is located on the upper surface of insulation barrier part 140 and arranges in pairs with the first electrode 120.Insulation barrier part 140 has along the through air vent hole 141 of its thickness direction (above-below direction in figure).
The first electrode 120 in each electrode pair and the second electrode 130 stagger on the thickness direction (vertical direction in Fig. 1) of insulation barrier part 140, are positioned at below insulation barrier part 140 with the plasma discharge making the first electrode 120 and the second electrode 130 produce.
Driving power 110 applies voltage between the first electrode 120 and the second electrode 130, and below insulation barrier part 140, produce heating region, air vent hole 141 is for the circulation of process gas.
According to the discharge assembly 100 of the embodiment of the present invention, between the first electrode 120 and the second electrode 130, insulation barrier part 140 is set, DBD can be adopted to discharge, the discharge voltage that driving power 110 applies between the first electrode 120 and the second electrode 130 can be improved, thus the plasma discharge below insulation barrier part 140 can produce a large amount of plasma.Insulation barrier part 140 can prevent between the first electrode 120 and the second electrode 130, producing arc light in discharge process, avoids discharge assembly 100 to suffer damage.In addition, it is simple that above-mentioned discharge assembly 100 has structure, is easy to the advantage controlled.In addition, driving power 110 can apply higher frequency between the first electrode 120 and the second electrode 130, and the Application Range of driving power 110 is wider, can produce the plasma of desired density as required, thus improve applicability.Broken away from the restriction of conventional electrode configurations, without the need to using electrode as placing the platform of substrate.
Further, with reference to figure 1, the upper surface 143 of insulation barrier part 140 is provided with multiple groove 144, and multiple second electrode 130 is located in groove 144 respectively correspondingly, and in FIG, a part for the second electrode 130 protrudes upward in groove 144.
As Figure 1-3, each in the first electrode 120 and the second electrode 130 is multiple and along insulation barrier part 140 transverse direction (left and right directions in Fig. 1 and 2) interval and arranges.In an example of the present invention, as shown in Figure 2, the first electrode 120 and the second electrode 130 are 6, and are distributed on the whole area of insulation barrier part 140.Thus, improve the area that driving power 140 discharges between the first electrode 120 and the second electrode 130, thus expand the area of heating region.In addition, by changing the quantity of the first electrode 120 and the second electrode 130, machining area can be changed easily, thus improve applicability.
Composition graphs 2, in further embodiment of the present invention, multiple first electrode 120 and multiple second electrodes 130 being transversely arranged alternately at insulation barrier part 140.Namely at insulation barrier part 140 transversely, each first electrode 120 is adjacent with two the first electrodes 120 respectively with two adjacent, each second electrodes 130 of the second electrode 130 respectively.Make the pressure reduction between insulation barrier part 140 upper surface 143 and lower surface 142 more balanced thus, thus after voltage is applied to the first electrode 120 and the second electrode 130, plasma can be produced between the first adjacent electrode 120 and the second electrode 130, ensure that the distribution of plasma is more even thus.
In one embodiment of the invention, as shown in Figure 2, described air vent hole 141 is divided into many groups, described many group air vent holes are arranged along the lateral separation of insulation barrier part 140, first electrode 120 is arranged along the lateral separation of insulation barrier part 140, second electrode 130 is arranged along the lateral separation of insulation barrier part 140, and is respectively equipped with air vent hole described in a group between the first electrode 120 adjacent one another are and the second electrode 130, often organizes air vent hole and comprises multiple air vent hole.Like this, air vent hole 141 can be distributed on the whole area of insulation barrier part 140 relatively uniformly, improves the uniformity that process gas is discharged.Further, many group air vent holes 141 are arranged at equal intervals along the transverse direction of insulation barrier part 140, and the first electrode 120 is arranged at equal intervals along the transverse direction of insulation barrier part 140, and the second electrode 130 is arranged at equal intervals along the transverse direction of insulation barrier part 140.The uniformity of further lifting process gas, and the uniformity improving the plasma produced between the first electrode 120 and the second electrode 130.
As Fig. 2, insulation barrier part 140 is rectangular dielectric plate 140, first electrode 120 and the second electrode 130 are strip, first electrode 120 is located at (see Fig. 1) on the lower surface 142 of rectangular dielectric plate 140 along the longitudinal direction (vertical direction of Fig. 2) of rectangular dielectric plate 140, and the second electrode 130 is located on the upper surface 143 of rectangular dielectric plate 140 along the longitudinal direction of rectangular dielectric plate 140.Thus, the area that further increase driving power 110 discharges between the first electrode 120 and the second electrode 130, plasma is distributed in the whole length of the first electrode 120 and the second electrode 130, increase the area that driving power 110 discharges between the first electrode 120 and the second electrode 130, improve the uniformity of plasma.
In one embodiment of the invention, insulation barrier part 140 can be made up of pottery, quartz or polytetrafluoroethylene.There is cost low, be easy to the advantage of processing.
As shown in Figure 1, the driving power 110 of the embodiment of the present invention can be low-frequency power, high frequency electric source, one of radio-frequency power supply and very high frequency(VHF) power supply.Along with driving power applies the raising of frequency, standing wave effect when this kind of discharging structure can effectively be avoided discharging in plasma, and then improve the utilance of process gas, increase production capacity.
Fig. 3 is the schematic diagram of the modification of discharge assembly according to the embodiment of the present invention.According to embodiments of the invention, can carry out multiple conversion to discharge assembly 100, as increased the first electrode 120 and the right quantity of the second electrode 130, the quantity of electrode pair can specifically set as required, as in Fig. 3, and electrode pair 1, electrode pair 2, electrode pair 3 etc.Like this, by increasing or reduce the quantity of electrode pair, can change the area of heating region, the scope of application is wider, is applicable to multiple chamber device.
Be understandable that, the parameters such as the thickness of insulation barrier part 140, the frequency of driving power 110, discharge voltage, air pressure and discharge gas may be used for the parameters such as the density of control plasma.
Adopt dielectric barrier discharge (DBD) according to the discharge assembly 100 of the embodiment of the present invention, there is high discharge voltage, and structure is simple, be easy to control, and produce arc light between electrode when can avoid electric discharge.For substrate processing apparatus, such as, during the chamber device of PECVD device, without the need to the platform of substrate will be placed as bottom electrode.
As shown in Figure 4, chamber body 101, heating and heat-insulating device 116, uniform flow room body 109, transmitting device 115 and discharge assembly 100 is comprised according to the chamber device of the embodiment of the present invention.
Have processing chamber 1011 in chamber body 101, chamber body 101 has air inlet 102 and gas outlet 103 and substrate import 105 and substrate outlet 106.Heating and heat-insulating device 116 is located in described processing chamber 1011.In described uniform flow room body 109, there is uniform flow room 1091, described uniform flow room body 109 to be located in described processing chamber 1011 and to be positioned at above described heating and heat-insulating device 116, described uniform flow room body 109 is provided with the opening relative with described heating and heat-insulating device 116, and described uniform flow room body 109 is in communication with the outside by the air inlet 102 of described chamber body 101.Described transmitting device 115 to be located in described processing chamber 1011 and for being imported into by substrate 104 and spreading out of described processing chamber 1011 between described uniform flow room body 109 and described heating and heat-insulating device 116.Discharge assembly can be the discharge assembly 100 of the substrate processing apparatus of above-mentioned first aspect embodiment, the insulation barrier part 140 of wherein said discharge assembly 100 is located at the opening part of described uniform flow room body 109 to close described opening, and described uniform flow room 109 is communicated with described processing chamber 1011 by described air vent hole 141.
According to the chamber device of the embodiment of the present invention, a large amount of plasma is produced to applying driving power between the first electrode 120 of discharge assembly 100 and the second electrode 130, and plasma (in Fig. 4 shown in dotted line) is produced between by each electrode pair, thus ensure that plasma is evenly distributed, and the driving power of higher frequency can be applied, now insulation barrier part 140 can be avoided producing standing wave effect in the plasma, thus improves the utilance of process gas, increases production capacity.Substrate 104 is in the below of discharge assembly 100, avoids plasma to the injury of substrate 104 film forming, improves substrate 104 quality of forming film.In addition, insulation barrier part 140 can also prevent from producing arc light between first electrode 120 and the second electrode 130 of discharge assembly 100, prevents chamber device to be damaged, and improves the useful life of chamber device.The chamber device of the embodiment of the present invention can also realize the efficiency of transmission of substrate 104 by transmitting device 115, improve the service efficiency of chamber device.In addition, this chamber device structure is simple, and cost is low.And broken away from the restriction of conventional electrode configurations, in treatment substrate process, substrate can transmit continuously, realize real chain type to produce, improve efficiency, and improve expansion, such as by increasing electrode pair number, the transmission speed of substrate 104 can be changed, thus can film forming speed.
As shown in Figure 4, the driving power 110 of discharge assembly 100 is located at the outside of described chamber body 101.Be convenient to like this control driving power 110 to the supply frequency applied between the first electrode 120 and the second electrode 130.
In one embodiment of the invention, described substrate 104 import 105 place is provided with the inlet valve 107 of the import 105 for opening and closing described substrate 104, and outlet 106 place of described substrate 104 is provided with the outlet valve 108 for opening and closing the outlet of described substrate.In technical process, import 105 and outlet 106 are closed, and avoid outside air to enter processing chamber 1011, and after technical process terminates, import 105 and outlet 106 are opened, and facilitate importing into and spreading out of of substrate 104.
In one embodiment of the invention, described transmitting device 115 comprises multiple travelling gears that the left and right directions along chamber body is intervally installed.Ensure substrate 104 more steadily and import into rapidly and spread out of processing chamber 1011.
According to the chamber device of the embodiment of the present invention, the driving power of different frequency can be applied as required thus produce different densities and the plasma be evenly distributed, improve applicability.
According to embodiment of the present invention PECVD device, comprise the chamber device described according to above-described embodiment.
In addition, according to the PECVD device of the embodiment of the present invention other form and operation be all known for those of ordinary skills, be not described in detail here.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalents thereof.
Claims (12)
1. a discharge assembly for substrate processing apparatus, is characterized in that, comprising:
Driving power, described driving power has first end and the second end;
Insulation barrier part, described insulation barrier part has along the through air vent hole of its thickness direction;
Multiple first electrode, described first electrode is connected with the first end of described driving power and is located on the lower surface of described insulation barrier part respectively; With
Multiple second electrode, described second electrode is connected with the second end of described driving power and is located at respectively on the upper surface of described insulation barrier part and arranges in pairs with described multiple first electrode;
Described first electrode wherein in each electrode pair and the second electrode stagger on the thickness direction of described insulation barrier part, are positioned at below described insulation barrier part with the plasma discharge making described first electrode and the second electrode produce.
2. the discharge assembly of substrate processing apparatus according to claim 1, is characterized in that, the upper surface of described insulation barrier part is provided with multiple groove, and described multiple second electrode is located in described groove respectively correspondingly.
3. the discharge assembly of substrate processing apparatus according to claim 2, it is characterized in that, described air vent hole is divided into many groups, described many group air vent holes are arranged along the lateral separation of described insulation barrier part, described first electrode is arranged along the lateral separation of described insulation barrier part, described second electrode is arranged along the lateral separation of described insulation barrier part, between described first electrode adjacent one another are and described second electrode, be respectively equipped with air vent hole described in a group, often organizes air vent hole and comprises multiple air vent hole.
4. the discharge assembly of substrate processing apparatus according to claim 3, it is characterized in that, described many group air vent holes are arranged at equal intervals along the transverse direction of described insulation barrier part, described first electrode is arranged at equal intervals along the transverse direction of described insulation barrier part, and described second electrode is arranged at equal intervals along the transverse direction of described insulation barrier part.
5. the discharge assembly of substrate processing apparatus according to claim 1, it is characterized in that, described insulation barrier part is rectangular dielectric plate, described first electrode and described second electrode are strip, described first electrode on the lower surface of described rectangular dielectric plate respectively along the longitudinal extension of described rectangular dielectric plate, described second electrode on the upper surface of described rectangular dielectric plate respectively along the longitudinal extension of described rectangular dielectric plate.
6. the discharge assembly of substrate processing apparatus according to claim 1, is characterized in that, described insulation barrier part is made up of pottery, quartz or polytetrafluoroethylene.
7. the discharge assembly of substrate processing apparatus according to claim 1, is characterized in that, described driving power is low-frequency power, high frequency electric source, one of radio-frequency power supply and very high frequency(VHF) power supply.
8. a chamber device, is characterized in that, comprising:
Chamber body, has processing chamber in described chamber body, and described chamber body has air inlet and gas outlet and substrate import and substrate outlet;
Heating and heat-insulating device, described heating and heat-insulating device is located in described processing chamber;
Uniform flow room body, in the body of described uniform flow room, there is uniform flow room, described uniform flow room body to be located in described processing chamber and to be positioned at above described heating and heat-insulating device, described uniform flow room body is provided with the opening relative with described heating and heat-insulating device, and described uniform flow room body is in communication with the outside by the air inlet of described chamber body;
Transmitting device, described transmitting device to be located in described processing chamber and for being imported into by substrate and spreading out of described processing chamber between described uniform flow room body and described heating and heat-insulating device; With
Discharge assembly, described discharge assembly is the discharge assembly of the substrate processing apparatus according to any one of claim 1-7, and the opening part that the insulation barrier part of wherein said discharge assembly is located at described uniform flow room body is to close described opening and described uniform flow room is communicated with described processing chamber by described air vent hole.
9. chamber device according to claim 8, is characterized in that, the driving power of described discharge assembly is located at the outside of described chamber body.
10. chamber device according to claim 8, is characterized in that, described substrate import department is provided with the inlet valve for opening and closing described substrate import, and described substrate exit is provided with the outlet valve for opening and closing the outlet of described substrate.
11. chamber device according to claim 10, is characterized in that, described transmitting device comprises multiple travelling gears that the transverse direction along chamber body is intervally installed.
12. 1 kinds of PECVD device, is characterized in that, comprise the chamber device according to Claim 8 according to any one of-11.
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| WO1999040758A2 (en) * | 1998-01-08 | 1999-08-12 | The University Of Tennessee Research Corporation | Remote exposure of workpieces using a one atmosphere uniform glow discharge plasma |
| CN1323751C (en) * | 2003-05-27 | 2007-07-04 | 松下电工株式会社 | Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method |
| SK5783Y1 (en) * | 2010-07-02 | 2011-07-06 | Univerzita Komenskeho V Bratislave Fakulta Mat Fyziky | Device for generating layer of non-isothermal plasma by electrical capacitive electrodes asymmetrically bound |
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| CN101420816A (en) * | 2007-10-22 | 2009-04-29 | 新动力等离子体株式会社 | Capacitively coupled plasma reactor |
| CN101930902A (en) * | 2009-06-24 | 2010-12-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating cavity and semiconductor processing equipment |
| CN201805613U (en) * | 2010-05-31 | 2011-04-20 | 中国航空工业空气动力研究院 | Flexible belted plasma generator |
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