CN1323751C - Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of expanding a processing area and of carrying out uniform processing, and allowing design to be easily changed in response to an object of processing.

Description

The manufacture method and the method for plasma processing of plasma processing apparatus, generation reaction vessel for plasma

Technical field

The present invention relates to be used for effectively carrying out plasma processing apparatus and the method that large area plasma is handled.

Background technology

In the past, plasma surface treatment has been widely used for following purposes: remove impurity on the pending object such as organic material, etching or peel off resist, improve the adhesiveness of organic film, reducing metal oxide, form film, the preliminary treatment of electroplating and applying, and the surface of various material and part is revised.

For example, Japanese Patent Laid Open Publication [kokai] number 11-335868 discloses and has utilized plasma to carry out surface treatment, wherein plasma is providing plasma to generate gas to discharge space when, by generating in the electric discharge between electrodes space applying voltage between the pair of electrodes.In this plasma surface treatment, because the activation particle (species) of plasma or plasma is penetrated from single-nozzle, and with the direction that penetrates the direction quadrature on object is carried out plasma treatment when transporting object, therefore have such problem, promptly the treatment effect to object changes easily.

In addition, Japanese Patent Laid Open Publication [kokai] number 4-358076 discloses: increase processing area by the activation particle that utilizes plasma or plasma, wherein, plasma is to have the reaction vessel that applies the dielectric electrode by utilization to generate, and described coating dielectric electrode is to obtain by on a plurality of electrode surfaces of parallel placement the solid dielectric material being set.According to this technology, can be once object be carried out surface treatment than large tracts of land.Yet considering by uniform air flow provides the activation particle of plasma or plasma to the entire process zone, also has the very big space of improving.In addition, this large area plasma is handled has another problem, i.e. a large amount of consumption of gas cause the increase of operating cost.

In addition, for the object as the glass that is used for liquid crystal panel, be desirably in the following processing area that further increases.In order to handle various objects, need to increase the free degree in the device design.

Summary of the invention

Consider the problems referred to above, main consideration of the present invention provides a kind of plasma processing apparatus, it has the higher free degree according to pending object on Design of device, and has the processing area of increasing and consume the promptly low ability of carrying out uniform treatment originally that operates as of less gas.

That is to say, (be used for coming activate plasma to generate gas G at a kind of like this plasma processing apparatus by discharge, and generate gas to the plasma that object 5 sprays activation) in, plasma treatment appts of the present invention is characterised in that: have the reaction vessel R that is formed by insulating element 1, and this reaction vessel comprises: a plurality of through holes 2, each through hole has the inlet opening that is used for plasma generation gas G at the one end, and has the outflow opening that the plasma that is used to activate generates gas G in its opposite end; And electrode 3,4, be used for discharging at each through hole 2.

According to plasma treatment appts of the present invention, by under atmospheric pressure or under near the air pressure the atmospheric pressure in each through hole 2, carrying out gas discharge, and air-flow (it contains the activation particle that generates by gas discharge) by providing the plasma of activation to generate gas G to object 5 from through hole 2, can on large tracts of land, generate uniform plasma expeditiously, and large tracts of land object 5 be carried out surface treatment equably with less throughput.In addition, by using the appropriate combination of a plurality of insulating elements 1, can design suitable plasma processing apparatus with the higher free degree according to the shape and the size of object 5.

In above-mentioned plasma processing apparatus, preferably, electrode 3,4 is formed in the layer in the insulating element 1, and has hole (aperture) 8 in the position corresponding to through hole, and does not wherein have vacancy (deficit) part 30 between the adjacent pores in electrode 8.In this case, owing to can reduce the appearance of insulating element 1 upper surface discharge 31, be difficult to carry out arc discharge 5 from surface-discharge 31 to object.Therefore, can reduce because the damage that arc discharge causes object 5.

In addition, preferably, electrode 3,4 is formed in the layer, and with towards insulating element 1, and it is outwards outstanding with respect to the periphery of another electrode that is positioned at the airflow direction upstream side to be positioned at the periphery of an electrode in airflow direction downstream.In this case, can prevent on the insulating materials 1 between the periphery of electrode 3,4 and surface-discharge 31 appears in the position outside hole 8.Thus, can further reduce the damage of the object 5 that causes by arc discharge.

In addition, preferably, above-mentioned plasma processing apparatus also comprises thermoregulator, and it is configured to the temperature of insulating element 1 is controlled at the temperature that is easy to launch secondary electron.In this case, by the secondary electron that discharges from insulating element 1, increased plasma and generated density.Therefore, can improve plasma treatment efficient, for example, remove or revise the efficient of object 5.

Plasma processing apparatus according to the preferred embodiment of the present invention comprises:

The pair of electrodes plate has a plurality of through holes;

Insulation board has a plurality of through holes, and it is arranged between the battery lead plate, makes the lead to the hole site of battery lead plate corresponding to the lead to the hole site of insulation board;

Gas supply unit is configured to that plasma is generated gas and is fed to a plurality of discharge spaces that the through hole by the through hole of battery lead plate and insulation board forms; And

Voltage applying unit is configured to apply voltage between battery lead plate, to generate the plasma that plasma generates gas simultaneously in discharge space.

In addition, comprise according to the plasma processing apparatus of the another preferred embodiment of the present invention: tubular container, it has pair of electrodes and is arranged at insulation board between the electrode; Gas supply unit is configured to generate gas from an end supplying plasma of tubular container; And voltage applying unit, be configured between electrode, apply voltage, in tubular container, to generate the plasma that plasma generates gas, utilize the plasma that penetrates from the other end of tubular container that object is carried out surface treatment thus.This device is characterised in that: provide electrode by the battery lead plate with a plurality of through holes, insulation board has a plurality of through holes, tubular container has a plurality of discharge spaces that the through hole by the through hole of battery lead plate and insulation board forms, and the plasma plasma that generates gas is by applying between the battery lead plate that voltage produces simultaneously and penetrating from the other end of tubular container in discharge space.

Another consideration of the present invention provides the manufacture method of a kind of reaction vessel R, and this reaction vessel is used for being created on the plasma that above-mentioned plasma processing apparatus uses.That is, this method comprises the steps:

Between the plate that has a plurality of openings and form (sheet), place the conducting film that forms by conductive material, thereby the opening of these plates is corresponded to each other by insulating materials; And

Synthetic lamination is carried out global formation, thereby provide insulating element 1, electrode (3,4) and through hole 2 by the opening of these plates, conducting film and these plates respectively.According to the method, can easily make the reaction vessel R that is applicable to above-mentioned plasma processing apparatus.In addition, can accurately form through hole 2 and electrode (3,4).

Another consideration of the present invention provides the method for plasma processing that uses above-mentioned plasma processing apparatus.That is, this plasma processing method comprises the steps:

Discharge in through hole 2 by applying voltage, make plasma generation gas G flow to the other end simultaneously, thus, in through hole 2, generate the plasma generation gas G of plasma with activation from an end of through hole 2 to electrode (3,4); And

Spray the plasma generation gas G of activation on the surface of object 5 from the other end of through hole 2.According to the method, can on large tracts of land, generate plasma expeditiously, and carry out surface treatment equably to having this larger area object 5 with less throughput.

Describedly be used to realize that optimal mode of the present invention will be expressly understood other features of the present invention and the advantage of bringing thus from following.

Description of drawings

Figure 1A and 1B are according to the top schematic view of the plasma processing apparatus of the preferred embodiment of the present invention and viewgraph of cross-section;

Fig. 2 A and 2B are according to the top schematic view of the plasma processing apparatus of another preferred embodiment of the present invention and viewgraph of cross-section;

Fig. 3 A is the viewgraph of cross-section according to the plasma treatment appts of the another preferred embodiment of the present invention, and Fig. 3 B is the viewgraph of cross-section along the A-A line intercepting of Fig. 3 A;

Fig. 4 A be generate under the situation of arranging electrode on the parallel direction of the airflow direction of gas with plasma, the viewgraph of cross-section of explanation line of electric flux direction, and Fig. 4 B be generate under the situation of arranging electrode on the direction that the airflow direction of gas intersects with plasma, the viewgraph of cross-section of explanation line of electric flux direction;

Fig. 5 A and 5B are the top views according to the electrode of the preferred embodiment of the present invention;

Fig. 6 A and 6B are respectively along the viewgraph of cross-section of the A-A ' line of Fig. 5 A and 5B intercepting;

Fig. 7 A to 7C is according to the top schematic view of the plasma processing apparatus of the another preferred embodiment of the present invention and viewgraph of cross-section;

Fig. 8 is the schematic cross-sectional view according to the plasma processing apparatus of the another preferred embodiment of the present invention;

Fig. 9 is the schematic cross-sectional view according to the plasma processing apparatus of the another preferred embodiment of the present invention;

Figure 10 is the schematic cross-sectional view according to the plasma processing apparatus of the another preferred embodiment of the present invention;

Figure 11 is an instance graph that is illustrated in the voltage waveform that applies between the electrode;

Figure 12 is another instance graph that is illustrated in the voltage waveform that applies between the electrode;

Figure 13 is the another instance graph that is illustrated in the voltage waveform that applies between the electrode;

Figure 14 A and 14B are the partial cross-sectional view according to the plasma processing apparatus of the preferred embodiment of the present invention;

Figure 15 A to 15D is plane and the side view by the reaction vessel that forms of a plurality of insulating elements of combination;

Figure 16 A is the schematic circuit diagram according to the plasma processing apparatus of the preferred embodiment of the present invention, and Figure 16 B is the voltage oscillogram that expression puts on unit A and B;

Figure 17 is the schematic circuit diagram according to the plasma processing apparatus of the another preferred embodiment of the present invention; And

Figure 18 is the schematic diagram of plasma processing apparatus used in comparative example 1.

Be used to realize optimal mode of the present invention

According to the preferred embodiment, describe in detail below plasma processing apparatus of the present invention, be used to generate the manufacture method and the method for plasma processing of the reaction vessel of plasma.

The preferred embodiment of plasma processing apparatus of the present invention is shown in Figure 1A, 1B, 2A and 2B.These plasma processing apparatus have reaction vessel R, this reaction vessel comprise the through hole that is formed in the tabular insulating element 12 and embed in the insulating element 1 a plurality of (to) electrode 3,4.

Preferably, insulating element 1 is made by having dystectic insulation (dielectric) material.For example, can use to have high heat resistance and high-intensity pottery or glass material, such as quartz glass, aluminium oxide, zirconia, mullite and aluminium nitride.Insulating element is not limited to these materials.Consider the ratio of performance to price and high strength, especially preferably use aluminium oxide.Alternatively, can use high dielectric material, such as titanium oxide and barium titanium oxide.Electrode 3,4 can be made such as copper, tungsten, aluminium, brass and stainless steel by conductive metallic material.Especially, preferably use tungsten or copper.The material of insulating element 1 and electrode 3,4 is preferably selected like this, make the difference of the linear expansion coefficient between them minimize, to prevent because when making reaction vessel R or when in plasma treatment, applying thermic load, the deflection difference between insulating element and the electrode and the destruction that reaction vessel causes is occurred.

The shape of insulating element 1 and through hole 2 can suitably be designed.For example, insulating element 1 is configured to plate shape.In the drawings, insulating element 1 is the plate shape of rectangle in its plan view.In plan view, be circular through hole 2 and on the thickness direction of insulating element 1, penetrate.The opposite end of each through hole 2 provides opening in the apparent surface of insulating element 1.An opening flows into port 2a as gas, and another opening is as gas outflow port 2b.

Through hole 2 can form suitable shape.For example, being circular through hole 2 in plan view can arrange by two-dimensional pattern.Alternatively, the through hole 2 that is rectangular shape (slit (slit) shape shape) can be arranged parallel to each other.Especially, when the through hole 2 that is circle is arranged with two-dimensional pattern, under the condition that the diameter and the pitch of through hole 2 are suitably selected, can on than large tracts of land, spray the plasma generation gas G that activates equably, control the flow (flow velocity) that plasma generates the time per unit of gas G simultaneously.

In addition, form electrode 3,4, in through hole 2, produce discharge when between the two, applying voltage.For example, between electrode 3,4, connect electric power source 6, and between electrode 3,4, apply the pulse-like voltage that has stand-down (rest period).An electrode can be used as earth electrode.Space in each through hole 2 between the electrode is defined as discharge space.As mentioned above, the shape of electrode 3,4 can suitably be disposed, to produce discharge in discharge space.For example, preferably, electrode 3,4 embeds in the insulating element 1, and vicinity through hole 2 is separately placed.The accurate formation of through hole 2 and electrode 3,4 also helps the surface-treated uniformity.

In Fig. 1 A, 1 B, 2A and 2B, the apparent surface of insulating element 1 places upside and downside, and being circular through hole 2 is penetrating on the direction up and down, thereby, provide gas to flow into port 2a and gas outflow port 2b respectively by the opening that in the upper surface of insulating element 1 and lower surface, forms.The opening of through hole 2 is arranged with two-dimensional pattern at the upper surface and the lower surface of insulating element 1.In the drawings, through hole 2 is arranged with cubic grid pattern, thereby makes the fixed interval between the adjacent through-holes 2.

The arrangement of through hole 2 is unrestricted, and can be with optional arranged in patterns.For example, when through hole 2 in plan view during with hexagon solid matter (interlocking) arranged in patterns, they can closely and equably be arranged.As a result, can further improve object 5 surface-treated uniformities.

Interval between the size of through hole 2 and the adjacent through-holes 2 is suitably determined, thereby the effective activate plasmas of discharge that pass through in the through hole 2 generate gas, and the plasma of activation generation gas is evenly penetrated from through hole 2.Especially, the diameter (internal diameter) of preferred through hole 2 is in 0.01 to 15mm scope.In this case, can provide wide area surface to handle by the controlled flow that plasma generates gas.In addition, preferably, the interval between the adjacent through-holes 2 is in 0.03 to 60mm scope.For example, carrying out under the situation of plasma treatment having relative object 5 than small size, through hole 2 is preferably designed for has less relatively diameter.

In the embodiment shown in Fig. 3 A and the 3B, the apparent surface of insulating element 1 places upside and downside, and the through hole 2 that is rectangle (slit-shaped) shape in plan view is penetrating on the direction up and down, thereby the opening that forms in upper surface by insulating element 1 and the lower surface provides gas to flow into port 2a and gas outflow port 2b respectively.The opening of through hole 2 is arranged with pattern parallel at the upper surface and the lower surface of insulating element 1, thus the fixed distance between the adjacent through-holes 2.

The size of suitably definite through hole 2 and the interval between the adjacent through-holes 2, thus gas generated by the effective activate plasmas of discharge in each through hole 2, and the plasma of activation generation gas G is evenly penetrated from through hole 2.Especially, the width (minor face) of preferred rectangular through-hole 2 size is in 0.01 to 15mm scope.In this case, can further improve the surface-treated uniformity by to carrying out plasma treatment along the object 5 that transports on the short side direction of through hole 2.

In addition, preferably, the interval between the adjacent through-holes 2 is in 0.01 to 30mm scope.In this case, the plasma of activation generates gas G and can penetrate continuously by the longitudinal direction from the gas outflow port 2b of through hole 2 along through hole.Therefore, to carrying out under the situation of plasma treatment, can further improve the surface-treated uniformity along the object 5 that transports on the short side direction of through hole 2.

In the embodiment shown in Figure 1A, 1B, 2A and the 2B, two electrodes 3,4 all embed in the insulating element 1.Electrode 4 places upper surface one side (that is, having surface one side that gas flows into port 2a) of insulating element 1, and electrode 3 places lower surface one side (that is surface one side that, has gas outflow port 2b) of insulating element 1.With through hole 2 in plasma generate on the direction that the flow direction of gas G parallels, electrode 3 separates with electrode 4.Insulation (dielectric) material that constitutes insulating element 1 is between electrode 3,4.

In this case, electrode 3,4 be formed at insulating element 1 the layer in, thereby the position of a plurality of holes 8 of electrode 3,4 corresponding to the position of the through hole 2 of insulating element 1, and each through hole 2 by the corresponding hole 8 of electrode 3,4 around.The situation that forms electrode 3,4 with each through hole 2 is separately compared, and hole 8 is formed in each plate electrode 3,4, thereby the inner surface of the hole 8 of electrode 3,4 is used as discharging surface, is used for discharging at through hole 2.

In the embodiment shown in Figure 1B, because the diameter of the hole 8 of electrode 3,4 equals the diameter of through hole 2, the inner surface of each through hole of insulating element 1 flushes with the inner surface of the through hole 8 of electrode 3,4.Therefore, the inner surface of the hole 8 of electrode 3,4 is exposed to the inside of each through hole 2.In this case, can easily discharge by between electrode, applying voltage, and the activation Particle Density among the increase plasma generation gas G, to improve treatment effeciency.When plasma generation gas G does not comprise reacting gas, preferred exposed electrode 3,4, because the damage of the exposed electrode 3,4 that is caused by discharging is less relatively, and discharge is carried out easily.

In the embodiment shown in Fig. 2 A and the 2B, hole 8 diameters of electrode 3,4 are greater than the diameter of through hole 2, and inner surface is insulated parts 1 covering in the hole 8 of electrode 3,4.That is to say that electrode 3,4 is not exposed to the inside of through hole 2.In this case, when applying voltage between the electrode 3,4, in each through hole 2, carry out dielectrically impeded discharge.Therefore, electrode 3,4 directly is not exposed to the plasma or the discharge of generation.In other words, because the discharging surface of electrode 3,4 is subjected to constituting the protection of insulation (dielectric) material of insulating element 1, thereby can prevent the damage of electrode 3,4.This generates under the situation of gas G effective especially at the plasma that use contains reacting gas.

In addition, also there is another advantage that can make discharge stability and increase plasma generation density.When electrode 3,4 is exposed, there is such possibility: become unstable when applying high voltage owing to the arc discharge that occurs causes discharge.On the other hand, when electrode 3,4 is coated with insulation (dielectric) material, can effectively prevent the appearance of arc discharge, thereby stably keep discharge.The thickness of insulation (dielectric) material that forms on the inner surface of electrode 3,4 is appropriately determin.For adequately protect electrode surface and make the discharge be easy to carry out, preferably, this thickness is in 0.01 to 3mm scope.In addition, preferably, the distance between the electrode 3,4 (being the interval between the discharging surface) in 0.01 to 5mm scope, thereby stably generate gas discharge (plasma).

As mentioned above, when electrode 3,4 in each through hole 2 is generating when being spaced from each other on the parallel direction of the flow direction of gas G with plasma, the direction of the line of electric flux that produces in through hole 2 by the electrical potential difference between the electrode 3,4 is parallel to the flow direction of plasma generation gas G.At this moment, can produce the hyperpycnal flow discharge in the discharge space on the direction parallel, in through hole 2 with the flow direction of plasma generation gas G.This discharge has increased plasma and has generated among the gas G and activate Particle Density, and therefore further improves the efficient of plasma surface treatment.In the embodiment shown in the figures, because the discharging surface of electrode 3,4 extends, then around through hole 2, produce line of electric flux (electric flux line) around through hole 2.As a result, can obtain plasma expeditiously.

In addition, when the electrode 3 that places gas outflow port 2b one side is formed by earth electrode (this means that placing the electrode of pending object one side is earth electrode), can prevent that by the electrical potential difference between control electrode 3 and the object 5 arc discharge between them from occurring.As a result, the situation of effectively having avoided object 5 to be damaged by discharge.

Preferably, the above-mentioned electrode 3,4 that forms in layer does not have vacancy (penetrating) part except hole 8.That is, Fig. 5 A and 5B are illustrated respectively in the embodiment of the electrode 3,4 that forms in the insulating element 1 shown in Fig. 2 B.In this case, preferably use the electrode 3,4 (wherein around hole 8, not having vacancy part 30 to exist) of Fig. 5 B, rather than the electrode 3,4 of Fig. 5 A (wherein around hole 8, forming a plurality of vacancy parts 30).

Applying under the voltage condition by utilizing between the electrode 3,4 of electric power source 6 in insulating element 1, at Fig. 5 A, on the lower surface of insulating element 1, corresponding to the position of hole 8 with corresponding to the position of vacancy part 30 surface-discharge 31 is appearring, as shown in Figure 6A.On the other hand, when by utilizing when applying voltage between the electrode 3,4 of electric power source 6 in insulating element 1, at Fig. 5 B, only surface-discharge 31 appears in the position corresponding to hole 8 on the lower surface of insulating element 1, shown in Fig. 6 B.Therefore, compare the situation of Fig. 6 A, can reduce surface-discharge 31.

Surface-discharge 31 is the discharges that produce in the position of approaching object (work) 5.Therefore, when surface-discharge increases, occur easily from the arc discharge of surface-discharge 31 to object 5.In the insulating element 1 of Fig. 6 B, can reduce surface-discharge owing to compare the situation of Fig. 6 A, then be difficult to occur arc discharge.As a result, the damage minimum that object 5 is discharged.

About the electrode 3,4 that in layer, forms, preferably, be positioned near the periphery of the electrode 3 of object 5 one sides outwards outstanding with respect to the periphery that is positioned at away from the electrode 4 of object 5 one sides.That is to say, have therein among the rectangular projection figure of insulating element 1 of pair of electrodes 3,4, shown in Fig. 7 A to 7C, top electrode 4 has the bottom electrode 3 basic similar shapes shown in the dotted line with Fig. 7 A, and electrode 3,4 preferably forms with such size, makes top electrode 4 can be overlapped in the zone of bottom electrode 3.Thus, when the area of bottom electrode 3 during greater than the area of top electrode 4, the periphery of bottom electrode 3 is outwards outstanding with respect to the periphery of top electrode 4, shown in Fig. 7 A and 7B.In this case, voltage between the periphery of electrode 3,4 allows less than the voltage between the electrode in the through hole 23,4, prevents thus on the lower surface of insulating element 1, surface-discharge 31 occurs corresponding to the position of the periphery of electrode 3,4.In other words, can prevent from surface-discharge 31 except position, occurring, and further reduce the damage that object 5 is brought by arc discharge corresponding to hole 8.In Fig. 7 B, some through holes are not drawn.Electrode 3,4 can form with the suitable shape except that above-mentioned shape.In addition, a plurality of electrodes 3,4 can with through hole 2 in plasma generate on the direction that the flow direction of gas G intersects (for example vertical direction) and arrange.

In the embodiment shown in Fig. 3 A and the 3B, electrode 3,4 places insulating element 1 with such pattern, makes an electrode separate on identical horizontal plane with another electrode.That is to say that electrode 4 is positioned at a side of each through hole 2, and electrode 3 is positioned at the opposite side of each through hole 2.In the embodiment shown in the figures, two electrodes 3,4 embed in the insulating element 1, and are positioned on the identical horizontal plane in insulating element 1. Electrode 3,4 is spaced from each other intersecting on the direction of (vertical) with flow direction that plasma generates gas G.Insulation (dielectric) material that constitutes insulating element 1 is between electrode 3,4.

In an embodiment, electrode 3,4 is formed in the insulating element 1.That is to say that each electrode 3,4 forms with the pectination shape, its have the feed-in (feed) of extending along the arrangement of through hole 2 partly (3a, 4a), and have a plurality of electrodes parts of on the longitudinal direction of each through hole 2, extending (3b, 4b).(3b 4b) alternately places between the adjacent through hole 2 the electrode part of electrode 3,4.Therefore, electrode part 4b is positioned at a side of through hole 2, and electrode part 3b is positioned at the opposite side of through hole 2.Thus, electrode part 3b, 4b are integrally formed at respectively in the plate electrode 3, rather than each through hole 24 forms electrode 3,4 separately.Therefore, the side surface of electrode 3b, 4b is used as discharging surface, is used for discharging at through hole 2.

In order stably to carry out gas discharge (plasma), preferably, the distance between the electrode 3,4 is in 0.01 to 5mm scope.In this case, the line of electric flux that produces in through hole 2 by the electrical potential difference between the electrode 3,4 has the crossing direction of flow direction that generates gas G with plasma, shown in the arrow of Fig. 4 B.At this moment, discharge, generate gas G with activate plasma along intersecting direction.

In the embodiment shown in Fig. 3 A and the 3B, (3b, 4b) distance between is greater than the width edge (width side) of through hole 2 for the adjacent electrode of electrode 3,4 part.Therefore, the electrode part embeds in the insulating element 1 fully.In other words, electrode part 3b, 4b are not exposed to the inside of through hole 2.In this case, the same because the discharging surface of electrode 3,4 is subjected to constituting the protection of insulation (dielectric) material of insulating element 1 as the situation of Fig. 2 A and 2B, can prevent effectively that the damage of electrode 3,4 from occurring.In addition, preferably, the coating thickness of insulation (dielectric) material on the electrode 3,4 is in 0.01 to 3mm scope.

Although attached not shown in the figures, (3b, 4b) distance between can equal the width edge of through hole 2 to the adjacent electrode part of electrode 3,4.In this case, the surface of electrode part 3b, 4b flushes with the inner surface of the through hole 2 of insulating element 1, thereby electrode part 3b, 4b are exposed to the inside of each through hole 2.As a result, as the situation of Figure 1B, can increase plasma and generate among the gas G and activate Particle Density, and improve treatment effeciency.

Under the situation of using the slit-shaped through hole 2 shown in Fig. 3 A and the 3B, although it is attached not shown in the figures, but upper surface one side that electrode 4 can place insulating element 1 (promptly, flow near the side of port 2a near gas), and lower surface one side that electrode 3 can place insulating element 1 (promptly, side near gas outflow port 2b), the same as the situation of Figure 1A, 1B, 2A and 2B.In addition, can with through hole 2 in plasma generate on the parallel direction of the flow direction of gas G, through constituting insulation (dielectric) material of insulating element 1, electrode 3 and electrode 4 are separated.

For example, electrode 3,4 can be formed in the layer in the insulating element 1 continuously, thereby is forming hole corresponding to the position of through hole 2, and through hole 2 is arranged in the corresponding hole of electrode 3,4.In this case, the line of electric flux that produces in through hole 2 by the electrical potential difference between the electrode has the parallel direction of flow direction that generates gas G with plasma, shown in Fig. 4 A.In the discharge space of each through hole 2, can produce the hyperpycnal flow discharge.As a result, can increase the activation Particle Density of discharge generation, and improve the efficient of plasma surface treatment.

In the reaction vessel R that is made of insulating element 1 and the electrode 3,4 that wherein forms, electrode 3,4 and through hole 2 can be easy to intensive formation.In addition, by the electrode 3,4 that forms micro through-hole 2 and be used for discharging in micro through-hole, the plasma of activation generates gas G and can penetrate from the through hole of arranging with two-dimensional pattern 2.As a result, can realize the inhomogeneity raising of processing area and treatment effect.

Reaction vessel R with insulating element 1 and electrode 3,4 can mix with adhesive by the powder with insulating materials, synthetic mixture is shaped to plate (sheet), and stacked onboard conducting film obtains.This plate can by with ceramic powders such as quartz glass, aluminium oxide, zirconia, mullite and aluminium nitride with adhesive and mix with various types of additives if desired, and the mixture that synthesizes be shaped to plate shape prepare.Plate thickness can be determined according to the thickness of insulating element 1 and the distance between the electrode 3,4.For example, preferably, thickness of slab is in 0.05 to 5mm scope.

On the other hand, can be by conductive metallic material be formed conducting film such as the mode that copper, tungsten, aluminium, brass and stainless steel are printed on the insulating element.For example, form onboard after the conducting film, plate and other plate with conducting film are stacked, thereby conducting film places between the described plate.Thus obtained lamination is sintered to obtain insulating element 1.In addition, through hole 2 can form by lamination is holed.Alternatively, thus preferably by utilizing the plate that before is formed with through hole 2 and stacked sheet metal forming being made that the position of through hole 2 of plate is corresponding mutually, carry out stacked simultaneously and formation through hole 2.

Shown in Fig. 1 B and 2B, when (promptly in a face side of insulating element 1, have gas and flow into the upside of port 2a) provide electrode 4 and in apparent surface's a side (downside that promptly has gas outflow port 2b) when electrode 3 is provided, by be formed for the conducting film of electrode 4 (or 3) on the surface that is printed on first plate with the expection pattern, second plate is placed on the conducting film then.Then, by be formed for the conducting film of electrode 3 (or 4) on the surface that is printed on second plate with the expection pattern.In addition, the 3rd plate is placed on this conducting film to obtain a lamination.

Alternatively, form this lamination by following processing.That is to say, have the conducting film of printing with the expection pattern that is used for electrode 4 plate, have the plate of printing with the expection pattern that is used for electrode 3 and the plate that does not all have conducting film superposes like this, make each conducting film place between the sheet material material, and two outermost layers of this lamination are formed by the sheet material material.The lamination of gained is sintered, to obtain reaction vessel R.

Shown in Fig. 3 A and 3B, when same horizontal plane that two electrodes 3,4 are formed in the insulating element 1, by be formed for the conducting film of electrode 3,4 on the surface that is printed on first plate with the expection pattern, second plate is placed on this conducting film to obtain lamination then.Then, the lamination that is obtained is sintered, to obtain reaction vessel R.Reaction vessel R is placed in plasma and generates in the flow channel of gas G, flows into port 2a, process through hole 2, flows towards gas outflow port 2b from gas thereby plasma generates gas.

In Fig. 8, use the reaction vessel R shown in Fig. 2 A and the 2B, and on the upper surface (have gas and flow into port 2a) of insulating element 1, provide gas reservoir 11.Through hole 2 communicates with the inside of gas reservoir 11.Gas reservoir 11 is formed with: gas access 10 is used for generating gas G from one end (its top) to this gas reservoir supplying plasma; And gas vent 9, be used for the plasma that (its bottom) forms in its opposite end and generate gas.Insulating element 1 places under the gas vent 9 of gas reservoir 11.In the present embodiment, the gas vent 9 of gas reservoir 11 is made up of a plurality of gas vents 9 corresponding to the position of the through hole 2 of insulating element 1.As a result, the inside of gas reservoir 11 communicates with through hole 2 via gas vent 9.

Preferably, gas reservoir 11 has the even unit of gas, is used for generating gas G with even flow basically to through hole 2 supplying plasmas.When plasma generated gas G via gas access 10 inflow gas memories 11, because the increase of volume has reduced air pressure, thereby plasma generation gas G can flow into all through holes 2 with even velocity of flow.As a result, can supply the plasma generation gas G of activation from all through holes 2 of insulating element 1 equably, and under the velocity flow profile of improved plasma generation gas G, can carry out uniform plasma treatment.

In addition, preferably, plasma processing apparatus has the radiator 7 that is used to cool off insulating element 1.In this case, can prevent by the destruction that thermal deformation caused of insulating element 1 such as crackle etc., and the inhomogeneities that prevents when insulating element 1 hot-spot the plasma that penetrates from through hole 2, uniform surface treatment stably kept thus.

For example, gas reservoir 11 also is allowed to have the function of radiator 7.In this case, insulating element 1 is formed with radiator 7 and contacts.In the embodiment shown in the figures, radiator 7 is made of the end of the gas vent 9 with gas reservoir 11 and the part integrally formed with described end (sidepiece), and it extends between the top of gas reservoir 11 and bottom.Fin 7b is formed on the outer surface of sidepiece, thereby outwards outstanding.On the other hand, heat absorbing sheet 7a is formed on the end not and gas vent 9 corresponding positions, thereby inner outstanding at gas reservoir 11.

By the formation of this radiator 7, heat is generated gas G by heat absorbing sheet 7a from plasma and absorbs, and is transferred to fin 7b via end and sidepiece, and finally is dispersed into the outside of device from fin 7b.As a result, can prevent that plasma from generating the increase of the temperature of gas G and insulating element 1.

Above-mentioned radiator 7 is to use the air cooling type of fin 7b.Alternatively, can use the radiator 7 of water cooling type.In the embodiment shown in Fig. 9 and 10, cooling water is allowed to flow into coolant channel 7c, and each passage is formed on the position between the adjacent gas vent 9 in the end, with cooling insulating element 1.Fig. 9 represents that radiator 7 is formed on the situation on the reaction vessel R shown in Fig. 2 A and the 2B.Figure 10 represents that radiator 7 is formed on another situation on the reaction vessel R shown in Figure 1A and the 1B.In these cases, owing to the end of placing that contacts with insulating element 1 is cooled, thereby can effectively cools off insulating element 1 and prevent that the temperature of insulating element 1 from increasing.

Cooling water also can be used as thermoregulator, is used for the temperature of insulating element 1 is controlled to be the temperature of easy release secondary electron.That is to say, generate the electronics contained among the gas G and the influence of ion, can discharge secondary electron from insulating element 1 by plasma in activation.The temperature of insulating element 1 is high more, easy more release secondary electron.Yet, consider the damage of the insulating element 1 that causes by thermal expansion, the temperature of insulating element 1 is suitable for until near 100 ℃.

Therefore, preferably by using cooling water the temperature of insulating element 1 to be controlled within 40 to 100 ℃ the scope.Thus, the cooling water that is higher than room temperature by serviceability temperature, the surface temperature of insulating element 1 can increase with the temperature that is higher than room temperature when bringing into use this device, thereby compares with the situation of at room temperature bringing into use this device, can easily discharge secondary electron from insulating element 1.As a result, can increase plasma by the secondary electron that discharges from insulating element 1 and generate density, to improve the plasma treatment effect, such as the effect of correction and cleaning of objects 5.Consider and handle convenience and energy consumption, the temperature of further preferred cooling water is within 50 to 80 ℃ scope.

Preferably, gas reservoir 11 and radiator 7 are made by the material with high-termal conductivity.For example, can use copper, stainless steel, aluminium or aluminium nitride (AlN).When gas reservoir 11 and radiator 7 when making such as the insulating materials of aluminium nitride, can be minimized in the influence of the radio-frequency voltage that applies between the electrode, therefore discharge effectively, prevented the loss of the electrical power that between electrode, applies simultaneously basically.In addition, realize high cooling effectiveness by high thermal conductivity.

In addition, when the temperature by radiator 7 control insulating elements 1 increases, can prevent that insulating element 1 is subjected to the damage of thermal deformation.In addition, when insulating element 1 hot-spot, exist along with plasma generation density uprises at superheat section, through hole 2 ionic medium bodies generate the uneven trend that becomes.Increase by the temperature that prevents insulating element 1, can prevent the inhomogeneities that plasma generates in the through hole 2, thereby can evenly carry out surface treatment.

In addition, when electric heater is set when being used for the thermoregulator of insulating element 1 in radiator 7, can obtain and above-mentioned similar effect.In this case, preferably, the laying temperature measuring unit is such as thermocouple, with the temperature of monitoring radiator 7 in radiator 7.Alternatively, amber ear card (Peltier) equipment can be used as radiator 7.

Preferably, insulating element 1 is connected to radiator 7, thereby prevents that plasma from generating the leakage of gas G, and thermal conductivity can not worsen.For example, they can engage by using heat conduction lubricating grease, heat conduction double-sided adhesive tape or containing the material that engages resin.Alternatively, joint can be pushed then each other by mirror finish in the surface of insulating element 1 and radiator 7.

In addition, preferably, insulating element 1 and radiator 7 are integrally formed.In this case, can absorb heat effectively from discharge space by radiator 7.In addition, generate the leakage of gas G owing to prevented plasma, the uniform temperature that can obtain insulating element 1 distributes, and makes discharge stability.

In order to utilize above-mentioned plasma processing apparatus that object 5 is carried out surface treatment, plasma process gas G is supplied to gas reservoir 11 via gas access 10, flows into the through hole 2 that port 2a is sent to insulating element 1 via gas vent 9 and gas then.Next, plasma generates gas G and activates by the discharge that the discharge space between the electrode (3,4) carries out in through hole 2, and penetrates from gas outflow port 2b.

In order to generate gas G to through hole 2 supplying plasmas of reaction vessel R via gas reservoir 11, can form the gas supply unit (not shown), it for example is made of gas collecting jar with ground-on cover plate, tracheae, blender and pressure valve.In this case, gas collecting jar with ground-on cover plate (respectively storing the gas componant that plasma generates gas G) is connected to gas reservoir 11 by tracheae.At this moment, mixed by blender with required mixing ratio from the gas componant of gas collecting jar with ground-on cover plate supply, He Cheng mixture is pressed valve and sends to gas vent 9 under required air pressure then.

Preferably, the gas supply unit supply contains rare gas, nitrogen, oxygen and airborne at least a gas, perhaps contains the mist of its two or more gases, is used as plasma and generates gas G.

Under the situation of using air, can realize the surface correction of object 5 and remove organic materials from object 5 by plasma treatment.Preferably use and contain wetly dry air hardly as air.As rare gas, can use helium, argon, neon or krypton.Consider the ratio of performance to price and discharge stability, preferably use argon.Use the plasma treatment of rare gas or nitrogen to provide the surface of object 5 to revise.In addition, use the plasma treatment of oxygen that the removal of organic material from object 5 is provided.In addition, the plasma treatment of the mist of use rare gas and oxygen provides the removal of surface correction and organic material.Reacting gas can add rare gas or nitrogen to such as oxygen and air.The kind of reacting gas can be determined according to the purposes of handling.

Under the situation of the organic material that adheres on the cleaning of objects 5, removal resist, the organic film of etching or surface clean LCD or glass plate, preferably use oxidizing gas such as oxygen, air, CO ₂And N ₂O.In addition, fluoro-gas is such as CF ₄, SF ₆And NF ₃Can be used as reacting gas.Under the situation of the etching of carrying out silicon or resist or ashing, it is effective using fluoro-gas.Under the situation of reducing metal oxide, can use reducing gas such as hydrogen or ammonia.

Plasma generates gas G and activates by the discharge that the discharge space between the electrode 3,4 carries out in through hole 2.When between electrode 3,4, applying high voltage, produce electric field at discharge space by electrification source 6.By the generation of electric field, in discharge space, obtain gas discharge with near the air pressure atmospheric pressure or the atmospheric pressure.Plasma generates gas G and activates by gas discharge, and allows to become plasma in producing the discharge space of activation particle such as atomic group and ion.

At this moment, preferably, generate gas G to through hole 2 supplying plasmas under such air pressure, this air pressure is enough to provide required flow at time per unit, and the loss influence that is not stressed.In other words, preferably supplying plasma generates gas G like this, makes that the air pressure in the gas reservoir 11 is atmospheric gas pressure or near the air pressure (being preferably 100 to 300kpa) of atmospheric gas pressure.

The voltage (flowing into the plasma generation gas G that port 2a is fed to through hole 2 in order to activate from gas) that applies between electrode 3,4 by power supply 6 can be confirmed as having suitable waveform, such as AC wave shape, impulse waveform or its overlaid waveforms.Especially, preferably use power supply 6, it can apply the voltage of the pulse type waveform with stand-down between electrode 3,4.In this case, can in each through hole 2, stably evenly discharge expeditiously, therefore improve treatment effeciency.In addition, owing to effectively prevented the appearance of the non-discharge area in the through hole 2, can in each through hole, keep uniform discharge.As keeping the inhomogeneity reason of discharge,, recover by applying voltage once more betwixt in the past in stand-down then even be sure of that the discharge condition in each through hole was cancelled once in stand-down when discharge in the part of through hole 2 disappears accidentally.

Each Figure 11,12 and 13 expressions have the waveform of the pulse-like voltage of stand-down.That is, Figure 11 represents the square wave pulse, wherein alternately repeats rectangular pulse and stand-down.Figure 12 represents wave of oscillation pulse, wherein repeats with required circulation one group of rising edge, damping period and stand-down.Figure 13 represents doublet impulse, and wherein one group of positive pulse voltage output in a wavelength, stand-down, negative pulse voltage output and stand-down repeat as a circulation, as the situation of square wave pulse.According to the doublet impulse waveform of Figure 13, discharge condition approaches by utilizing the discharge condition of square wave pulse gained.In addition, under low relatively voltage, can switch, and can use transformer to be used for pressurization.Therefore, compare, can simplify the structure of power supply 6 with the situation of utilizing the square wave pulse.According to the internal diameter of through hole 2 and the distance between the electrode 3,4, determine between electrode 3,4, to apply, in order to carry out the voltage of gas discharge continuously at discharge space.For example, this voltage can be confirmed as 0.05 to 30kV scope.

In addition, preferably use pulse type waveform power supply, be used between electrode 3,4, applying voltage with 1H to 200kHz frequency.When the repetition rate of the voltage waveform that applies between electrode 3,4 is lower than 1Hz, exists owing to the reduction of the discharge stability in the discharge space and can not effectively carry out the surface-treated worry.On the other hand, when frequency surpassed 200kHz, will become was difficult to discharge equably in through hole 2, because the temperature of gas discharge (plasma) rolls up in discharge space, and discharge concentrates on the part of through hole 2 easily.In the said frequencies scope, the discharge of carrying out between the electrode 3,4 is stabilized, thereby further improves treatment effeciency.In addition, generate this excessive increase of temperature of gas G by preventing plasma, and can avoid the appearance of the cause thermal damage of object 5.And the part place that concentrates on through hole 2 by preventing to discharge can carry out uniform surface treatment.

In addition,, preferably use pulse type waveform power supply, be used between electrode 3,4, applying the pulse-like voltage of voltage waveform with 0.01 to 80% dutycycle as power supply 6.In this case, owing to, can further improve treatment effeciency to obtain stable discharge expeditiously.Square wave duty of ratio as shown in figure 11 can be by determining like this: with the rising edge of a pulse and the width between the trailing edge divided by at the rising edge of this pulse with through the width between the rising edge of next pulse of stand-down.In addition, under the situation of using the wave of oscillation pulse shown in Figure 12 and 13, dutycycle can be by determining like this: with the width between the waveform of the trailing edge of the rising edge of first pulse and second pulse divided by the cycle that comprises from the rising edge of first pulse to oscillation damping phase and stand-down.

In the present invention, also be preferably electrode 3,4 and be mid point (neutral) ground connection.In this case, can reduce the plasma generation gas G of activation and the electromotive force between the object 5, and can prevent to generate the appearance of gas G to the arc discharge of object 5 from the plasma of activation.In other words, owing to applying voltage under the condition that all is in quick condition at two electrodes 3,4, therefore can reduce the plasma generation gas G (plasma jet) of activation and the electromotive force between the object 5 with respect to ground.As a result, can prevent to cause the arc discharge of the cause thermal damage of object 5 to occur.

For example, shown in Figure 14 A, be applied in the top electrode 4 that is connected to power supply 6 as 13kV and during bottom electrode 3 ground connection (0kV), between two electrodes, can obtain the electrical potential difference of 13kV.In this case, generate the electrical potential difference of several at least kV of appearance between gas G and the object 5 at the plasma of activation, thereby can produce arc discharge Ar.In use put under the situation of ground connection, when the electromotive force of top electrode 4 is+6.5kV, and the electromotive force of bottom electrode 3 be-situation of 6.5kV under, as shown in Figure 14B, between two electrodes, can obtain the electrical potential difference of 13kV.In this case, approach 0 at the plasma generation gas G of activation and the electrical potential difference between the object 5.That is to say, when using neutral earthing, can reduce the plasma generation gas G of activation and the electrical potential difference between the object 5, and and irrelevant as the same electrical potential difference between electrode 3,4 under the situation of not using neutral earthing.As a result, can prevent to generate the appearance of gas G to the arc discharge of object 5 from the plasma of activation.

Subsequently, containing the plasma generation gas G that activates particle penetrates continuously from gas outflow port 2b.Therefore, can generate gas G, carry out surface treatment by the plasma that sprays activation at least a portion object 5 below placing gas outflow port 2b.

When below object 5 is placed in gas outflow port 2b, can transport object such as cylinder and belt conveyor by delivery unit.In this case, a plurality of objects 5 can be handled by continuous surfaces, these a plurality of objects just are being transported to the position below the gas outflow port 2b successively by delivery unit.

In addition, the distance between gas outflow port 2b and the object 5 can generate the kind of gas G according to the flow velocity, plasma that plasma generates gas G, the kind and the surface-treated purposes of object 5 suitably determined.For example, this distance can be determined to be in 1 to 30mm scope.

In above-mentioned surface treatment, produce gas discharge at each through hole 2, and the plasma that sprays by the gas discharge activation through through hole 2 generates gas G on object 5.Therefore, obtain large tracts of land and uniform plasma expeditiously, handle thereby can carry out wide area surface equably to object 5 with the throughput that reduces.

Thus, according to the present invention, can increase the processing area of single treatment.This has improved treatment effeciency.In addition, when the object 5 that is being transported was carried out surface treatment, the plasma that object 5 can be exposed to activation generated the time period that gas G one prolongs.Therefore, can effectively implement surface treatment with the throughput that reduces.In other words, can not increase throughput, improve the surface treatment ability by prolonging the time of contact between activation particle and the object 5.As a result, can prevent that the operating cost of surface processing device from increasing, so that the good ratio of performance to price to be provided.

In the above-described embodiments, by using the insulating element 1 that in plan view, has rectangular shape, obtain the rectangle processing area.Can the appropriate change processing area according to object 5.For example,, perhaps revise the arrangement of through hole 2, can obtain required processing area by changing the size or the shape of insulating element 1.

In addition, form reaction vessel R by making up a plurality of insulating elements 1, with further increase processing area.In addition, the arranged in patterns that insulating element 1 can be required is carried out surface treatment with instrument only for the specific region of object 5.And, when setting and object 5 have the insulating element 1 of different distance, can handle simultaneously need the crust zone of handling and the zone that needs pressure release surface to handle of object 5.Therefore, these are as the treatment effect adjusting device.

For example, shown in Figure 15 A, can form reaction vessel R by arranging a plurality of insulating elements 1.Alternatively, shown in Figure 15 B, can form reaction vessel R by insulating element 1 is arranged in matrix pattern.In these cases, can realize the further increase of processing area.In addition, when insulating element 1 is aligned to required pattern, can be to carrying out surface treatment with the corresponding processing region of the arrangement of insulating element 1.In this case, can only the specific region of object 5 be shown and handle.For example, shown in Figure 15 C, when insulating element 1 is arranged in L shaped pattern with formation reaction vessel R, can carry out surface treatment to the L shaped zone of object 5.And, shown in Figure 15 D, can form reaction vessel R by arranging like this insulating element 1, make distance between an insulating element and the object 5 be different from the distance between another insulating element and the object 5.In this case,, compare, obtain relatively low treatment effect with another processing region being separated by on the processing region of object 5 of big distance with insulating element 1.On the contrary,, compare, obtain relative high processing effect with another processing region being separated by on the processing region of object 5 of small distance with insulating element 1.Thus, according to pending object 5, can form the processing region that higher treatment effect is provided and provide the lower to manage the processing region of effect according to purpose.

In addition, when forming reaction vessel R,, can easily carry out various modifications, such as the size that changes processing region and shape or control processing horizontal by quantity or its arrangement of simple change insulating element 1 by a plurality of insulating elements 1 of combination.

Under the situation of combined insulation parts 1, can in each insulating element 1, form radiator 7 and gas reservoir 11.Alternatively, form single right radiator 7 and gas reservoir 11, with to insulating element 1 simultaneously supplying plasma generate gas G or from insulating element 1 distribute heat simultaneously.

Forming under the situation of reaction vessel R by combined insulation parts 1, preferably supplying electric power from same power source 6 to insulating element 1.For example, shown in Figure 16 A, when utilization comprises the unit A of single insulating element 1A and electric power source 6A and comprise the unit B formation reaction vessel R of single insulating element 1B and electric power source 6B, by utilizing power supply 6A between the electrode 3,4 of the insulating element 1A of unit A, to apply high frequency voltage, and by utilizing power supply 6B between the electrode 3,4 of the insulating element 1B of unit B, to apply high frequency voltage.Yet, between high frequency voltage that produces by the power supply 6A of unit A and the high frequency voltage that produces by the power supply 6B of unit B, be difficult to realize synchronously.For example, shown in Figure 16 B, phase-shifted often appears.Thereby have such worry, because the interference between the voltage that power supply 6A and 6B produce can not be supplied the voltage with required waveform.

In the present invention, as shown in figure 17, preferably supply electric power such as high frequency electric source to insulating element 1 from same power supplies 6.In Figure 17, a plurality of transformer 32a, 32b, 32c are electrically connected on single power supply 6 by parallel connection, and a plurality of insulating element 1 is electrically connected on each transformer 32a, 32b, 32c by parallel connection.According to this reaction vessel R, can prevent between the voltage that applies to insulating element 1, phase-shifted to occur.That is to say, can prevent the interference between the voltage that applies to insulating element 1, thereby supply has the voltage of required waveform.

In the present invention, when many to electrode 3,4 in through hole 2 when being parallel to direction that plasma generates the flow direction of gas G and arranging, can in discharge space, produce hyperpycnal flow and discharge.In this case, can produce the electric power that discharge is applied, improve the surface treatment ability by increasing to activate Particle Density in the gas and do not increase to.In addition,, improve the surface treatment ability, therefore can prevent the handled object prolongation in 5 needed processing times owing to can generate under the condition of supply time of air-flow of gas G not prolonging plasma to object 5 supply activation.As a result, there is the advantage that the productivity ratio reduction can not occur.

In addition, because the activation particle density that the plasma that sprays generates among the gas G is increased,, therefore do not need to shorten the distance between object 5 and the gas outflow port 2b on object 5 to improve the surface treatment ability.Therefore, can minimize, thereby prevent that object is subjected to the damage of arc discharge from the occurrence rate of discharge space towards the arc discharge of object 5.In addition, need between gas outflow port 2b and object 5, wire netting be set to prevent arc discharge.Therefore, can not hinder the air-flow that plasma generates gas G owing to the existence of wire netting, thereby can stably keep the surface treatment ability.And can eliminate such problem: the Corrosion of Metallic Materials by electrode 3,4 causes oxide (rust), and it pollutes object 5.

The present invention can be used for various object surfaces and handles.Especially, this surface treatment is applicable to the glass material (such as the glass material that is used for liquid crystal, plasma scope and organic electric lighting displaying device) that is used for various flat-panel monitors, and printed wiring board or various resin molding are such as polyimide film.These objects 5 are being carried out having these advantages under the surface-treated situation: clean impurity such as organic material, remove or the etching resist, improve the adhesiveness of organic film, reducing metal oxide forms film, preliminary treatment before water cleans is electroplated or is applied, and other surfaces are revised.Such as the glass material that is used for liquid crystal,, need large tracts of land to handle uniformly about the glass material that is used for flat-panel monitor because pending processing area increases continuously.Therefore since can flexible design the processing area of expection, expect that plasma processing apparatus of the present invention and method of plasma processing are preferably used for during these use.

Glass material is being carried out under the surface-treated situation, the glass material with transparency electrode, TFT (thin film transistor (TFT)) liquid crystal or filter (CF) of being made by indium tin oxide (ITO) is being carried out surface treatment.Resin molding is being carried out under the surface-treated situation, can handle the resin molding continuous surface that transports in (roll-to-roll) mode of rolling.

Example

According to example in detail the present invention.

(example 1)

By being printed on first plate (thickness: form conducting film on surface 0.4mm), on this conducting film, place the second plate (thickness: 1.4mm) then.In addition, by forming conducting film on the surface that is printed on second plate, on this conducting film, place the 3rd plate (thickness: 1.4mm) then.In this embodiment, obtain each first to the 3rd plate by the forming materials that will contain alumina powder for plate shape.Each plate has a plurality of holes, and each hole has the diameter of 1mm.These plates are placed in the layer, make that the aperture position of each plate is corresponding mutually.Form conducting film by printing tungsten layer.A plurality of holes 8 (diameter that all has 3mm is greater than the hole of plate) are formed in the conducting film, make each holes of these plates all place each hole of conducting film.Thus obtained lamination is sintered, obtaining reaction vessel R, shown in the viewgraph of cross-section of the plan view of Fig. 2 A and Fig. 2 B.

In this embodiment, the insulating element 1 of reaction vessel has the thickness of 3.2mm, and 55 through holes 2 that all have the 1mm diameter.These 55 through holes 2 are arranged in the plane domain of 45 * 22mm, make between the adjacent through-holes 2 to be 4.5mm at interval.In addition, form electrode 3,4, make each through hole 2 be placed in each hole 8 of electrode 3,4 by the upper and lower tungsten conductive layer that all has 30 μ m thickness.Distance on (that is, between the discharge plane) between the upper and lower electrode 3,4 is 1.4mm.Electrode (3,4) with hole 8 is not exposed to the inside of through hole 2.By using the insulating materials (dielectric material) identical with insulating element 1, the insulating coating that will have 1mm thickness is formed on the inner surface of hole 8 of electrode 3,4.Top electrode 4 is connected in electric power source 6, and bottom electrode 3 ground connection.

As shown in Figure 9, the gas reservoir 11 with copper radiator 7 is placed on the top of insulating element 1.Plasma generates gas G and introduces from the gas access 10 that is formed at gas reservoir 11 tops, and is allowed to flow in the through hole 2 of insulating element 1.Recirculated cooling water among the flow channel 7c in being formed at radiator 7, overheated to prevent insulating element 1.

(example 2)

By being printed on first plate (thickness: form conducting film on surface 0.7mm), on this conducting film, place the second plate (thickness: 1.5mm) then.Form each first and second plate by the forming materials that will contain aluminium oxide for plate shape, as the situation of example 1.Each first and second plate has a plurality of slit-shaped holes, all has the length of width and the 22mm of 1mm in its plan view.These plates are placed in the layer, make that the position of slit-shaped hole of each plate is corresponding mutually.Form conducting film by printing tungsten layer, as the situation of example 1.In this embodiment, each conducting film all forms comb pattern.Thus obtained lamination is sintered, to obtain reaction vessel R with the structure shown in Fig. 3 A and 3B.

In this embodiment, the insulating element 1 of reaction vessel has the thickness of 2.2mm, and 11 slit-shaped through holes 2 that all have 1mm width and 22mm length.These 11 through holes 2 are arranged in the plane domain of 45 * 22mm, make between the adjacent through-holes 2 to be 3.5mm at interval.In addition, electrode 3,4 thickness with 100 μ m are formed on the same level of insulating element 1, make electrode 4 be positioned at a side of each through hole 2, and electrode 3 is positioned at a relative side of each through hole.The distance of (promptly discharging between the plane) is 2mm between the electrode 3,4.In this embodiment, electrode 3,4 is not exposed to the inside of through hole 2.By using the insulating materials (dielectric material) identical with insulating element 1, formation has the insulating coating of 0.5mm thickness on the side surface of electrode 3,4, thereby flushes with the inner surface of through hole 2.Electrode 4 is connected in electric power source 6, and electrode 3 ground connection.

Shown in Fig. 3 A and 3B, the gas reservoir 11 with radiator 7 of being made by aluminium nitride places the top of insulating element 1.Plasma generates gas G and is introduced into from the gas access 10 on the top that is formed at gas reservoir 11, and is allowed to flow into the through hole 2 of insulating element 1.Recirculated cooling water among the flow channel 7c in being formed at radiator 7, overheated to prevent insulating element 1.

(example 3)

The device with example 1 is identical basically for the plasma processing apparatus of Shi Yonging in the present embodiment, and except the hole 8 of electrode 3,4 and the diameter of through hole 2 are 1mm, and the inner surface of the hole 8 of electrode 3,4 is exposed to the inside of through hole 2, as shown in figure 10.

(comparative example 1)

Use has the plasma processing apparatus of cross section as shown in figure 18.The reaction vessel 21 of this device is configured to rectangular tubular, and is made by the quartz glass with 1mm thickness.Discharge slit (slit) width is 1mm, inside (width) size that it is defined as the discharge generation part 22 that is provided with in the reaction vessel 21, and the gas that equals to be formed at the opposite end of reaction vessel 21 flows into the slit width of port 22a and gas outflow port 22b.In addition, the length scale of reaction vessel 21 is 45mm.The bottom of electrode 23,24 is positioned at the upstream side 5mm place of gas outflow port 22b.

Pair of electrodes 23,24 is made of copper, and forms gold-plated thereon.Electrode 23,24 is provided with like this, makes reaction vessel 21 place therebetween.Recirculated cooling water in the flow channel 27 in being formed at electrode 23,24 is with cooling electrode.Left electrodes 23 is connected to electric power source 6, and right electrodes 24 ground connection.

(assessment 1)

Use aforesaid each plasma treatment appts, apply voltage (6kHz, 13kV, 50% dutycycle) by utilizing electric power source 6 between electrode 3,4 (23,24), this voltage has the pulse type waveform of stand-down as shown in figure 11; Under atmospheric gas pressure, plasma generated simultaneously gas G (10 liters/minute nitrogen and 0.02 liter/minute oxygen) and introduce reaction vessel; And will contain air-flow that the plasma that activates particle generates gas and be ejected on the object that transports with the speed of 100mm/s, implement surface treatment.As object, be used for the rare glass of liquid crystal.Distance between this object and gas outflow port 2b (22b) is 5mm.The water contact angle of the rare glass of measuring before surface treatment is 68 degree.

For each example 1 to 3 and comparative example 1, after surface treatment, measure the water contact angle of object 5.The result is shown in the table 1.As shown in table 1, in example 1 and 2, observe the abundant minimizing of water contact angle.Especially, water contact angle significantly reduces in example 1.On the contrary, water contact angle is difficult to change in comparative example 1.Thus, these presentation of results examples 1 and 2 can provide frequently and want high surface treatment effect than example 1.

Table 1

	Water contact angle
		Example 1	8.3°
Example 2	9.8°
		Comparative example 1	65.0°

(assessment 2)

For each example 1,2 and comparative example 1, has the voltage (6kHz of the pulse type waveform of stand-down as shown in figure 12 except between electrode 3,4 (23,24), applying, 13kV, 5% dutycycle), under the condition identical, object 5 is carried out surface treatment with assessment 1.In this assessment, repeat surface treatment, water contact angle becomes 10 degree or littler on object 5.

Until object 5 on water contact angle become 10 the degree or the littler surface-treated number of times that repeats shown in the table 2.As shown in table 2, to handle by in example 1 and 2, carrying out one-time surface, water contact angle becomes less than 10 degree.On the other hand, in comparative example 1, repeat surface treatment 7 times, to obtain water contact angle less than 10 degree.These presentation of results examples 1 and 2 can provide the treatment effeciency that is higher than comparative example 1.

Table 2

	Number of processes
		Example 1	1
Example 2	1
		Comparative example 1	7

(assessment 3)

About example 3, has the voltage (6kHz of the pulse type waveform of stand-down as shown in figure 11 by utilizing electric power source 6 between electrode 3,4, to apply, 50% dutycycle), simultaneously introduce plasma and generate gas (10 liters/minute nitrogen and 0.02 liter/minute oxygen) at atmospheric gas pressure downhill reaction container, and will contain air-flow that the plasma that activates particle generates gas and be ejected on the object that transports with the speed of 100mm/s, implement surface treatment.In this assessment, carry out surface treatment for voltage 8kV, 9kV and the 10kV that each applied.As object, can use the rare glass that is used for liquid crystal.Distance between object 5 and gas outflow port 2b is 5mm.The water contact angle rare on glass that recorded before surface treatment is 68 degree.

Water contact angle on the object 5 that records after each surface treatment is shown in the table 3.As shown in table 3, in example 3, can be observed fully reducing of water contact angle.Thus, example 3 can provide high processing efficient.In addition, the voltage by increase applies can further reduce water contact angle.Yet when the voltage that applies was 10kV, it is unstable that discharge becomes, and be not suitable for surface treatment.

Table 3

The voltage that applies	Water contact angle
		8kV	22.5°
9kV	15.3°
		10kV	Non stationary discharge

(assessment 4)

About example 1, has the voltage (12kHz of the pulse type waveform of stand-down as shown in figure 13 by utilizing neutral earthing power supply 6A, 6B between electrode 3,4, to apply, 30% dutycycle), simultaneously introduce plasma and generate gas G (10 liters/minute nitrogen and 0.1 liter/minute dry air) at atmospheric gas pressure downhill reaction container, and will contain air-flow that the plasma that activates particle generates gas G and be ejected on the object that transports with the speed of 50mm/s, implement surface treatment.As object 5, can use resin molding or printed circuit board (PCB).Distance between object 5 and the gas outflow port 2b is 5mm.

After plasma treatment,, and measure adhesion strength at the enterprising electroplating of the treatment surface of object 5.The result is shown in the table 4.As shown in table 4, utilize the plasma treatment of the device of example 1 that such effect is provided: significantly increase the adhesion strength of electroplating film on the object 5, improve surface treatment efficient, and the reliability of improving electroplating film.

Table 4

	Adhesion strength
		Non-processor	0.006N/mm 2
Example 1	0.070N/mm 2

Industrial applicability

As mentioned above, according to plasma processing apparatus of the present invention, in each through hole, carry out gas discharge, and the plasma that contains the activation that activates particle that is produced by this gas discharge from through hole to the object supply generates the air-flow of gas. Therefore, can effectively carry out uniform plasma surface treatment with the larger area that little throughput is treated handled object.

Carry out when transporting object in the surface-treated situation, the plasma that object can be exposed to activation generates the time period that prolongs in the air-flow of gas, and utilizes less gas flow effectively to carry out surface treatment. Thus, do not increase throughput by prolonging object with the time of contact of activation particle, can improve surface treatment efficient, and prevent the increase of the operating cost of surface processing device.

And, reaction vessel can be easily formed by making up a plurality of insulating elements, and by changing arrangement and the quantity of insulating element, the design freedom of device can be increased. Therefore, can provide suitable plasma processing apparatus with size according to the shape of object.

Thus, plasma processing apparatus of the present invention has the ability of effectively carrying out the Large-Area-Uniform Cement Composite Treated by Plasma, because except conventional object to having the pending object of larger area, such as the glass that is used for liquid crystal panel, can suitably carry out surface treatment, thereby expection can be used in the various application.

Claims (28)

1. plasma processing apparatus, be used for generating gas by the discharge activate plasma, and the plasma generation gas of activation is ejected on the object, described device has the reaction vessel that is formed by insulating element, and this reaction vessel comprises: a plurality of through holes, each through hole has the inlet opening that is used for plasma generation gas at the one end, and has the outflow opening that the plasma that is used to activate generates gas in its opposite end; And be used for the electrode that discharges at each described through hole.

2. plasma processing apparatus as claimed in claim 1, wherein said insulating element is configured to plate shape.

3. plasma processing apparatus as claimed in claim 1, wherein said electrode is embedded in the described insulating element.

4. plasma processing apparatus as claimed in claim 1, wherein said electrode is exposed to the inside of described through hole.

5. plasma processing apparatus as claimed in claim 1, wherein said electrode is not exposed to the inside of described through hole.

6. plasma processing apparatus as claimed in claim 1, wherein said electrode is set up, and makes in described through hole to produce line of electric flux generating on the direction that gas flow direction intersects with this plasma.

7. plasma processing apparatus as claimed in claim 1, wherein said electrode is set up, and makes to produce line of electric flux on the direction parallel with this plasma generation gas flow direction in described through hole.

8. plasma processing apparatus as claimed in claim 1, the interval between the wherein said electrode is in 0.01 to 5mm scope.

9. plasma processing apparatus as claimed in claim 1, the opening of wherein said through hole forms the circle with 0.01 to 15mm diameter.

10. plasma processing apparatus as claimed in claim 1, the opening of wherein said through hole form the slit shape with 0.01 to 15mm minor face size.

11. plasma processing apparatus as claimed in claim 1, wherein said electrode are formed in the layer in the described insulating element, and have hole in the position corresponding to described through hole, and wherein do not have the vacancy part between the adjacent pores in described electrode.

12. plasma processing apparatus as claimed in claim 1, wherein said electrode is formed in the layer, with towards described insulating element, and it is outwards outstanding with respect to the periphery of another electrode that is positioned at this airflow direction upstream side to be positioned at the periphery of a described electrode in airflow direction downstream.

13. plasma processing apparatus as claimed in claim 1, wherein said insulating element is made by pottery.

14. plasma processing apparatus as claimed in claim 13, wherein said insulating element is made by aluminium oxide.

15. plasma processing apparatus as claimed in claim 1 comprises electric power source, is used for applying between described electrode the pulse-like voltage with stand-down.

16. plasma processing apparatus as claimed in claim 1 comprises electric power source, is used for applying between described electrode the voltage with 1Hz to 200kHz frequency.

17. plasma processing apparatus as claimed in claim 1 comprises electric power source, is used for applying between described electrode the pulse-like voltage with 0.01 to 80% dutycycle.

18. plasma processing apparatus as claimed in claim 1, wherein each described interelectrode line neutral earthing.

19. plasma processing apparatus as claimed in claim 1 comprises gas supply device, it is configured to be fed in the described reaction vessel containing gas at least a in inert gas, nitrogen, oxygen and the air, generates gas as plasma.

20. plasma processing apparatus as claimed in claim 1 comprises the radiator that is used to cool off described insulating element.

21. plasma processing apparatus as claimed in claim 1 comprises thermoregulator, it is configured to the temperature of described insulating element is controlled at the temperature of launching secondary electron easily.

22. plasma processing apparatus as claimed in claim 1 comprises the gas uniform device, it is configured to even velocity of flow plasma to be generated gas and is fed in all described through holes.

23. plasma processing apparatus as claimed in claim 1, wherein said reaction vessel forms by making up a plurality of insulating elements.

24. a manufacturing is applicable to the method for the described reaction vessel of the described plasma processing apparatus of claim 1, described method comprises the steps:

Between the plate that has a plurality of openings and form, place the conducting film that forms by conductive material, make that the opening of described plate is corresponding mutually by insulating materials; And

The global formation that synthesizes lamination, thus described insulating element, electrode and described through hole provided by the opening of described plate, conducting film and described plate respectively.

25. a method of plasma processing that uses the described plasma processing apparatus of claim 1, described method comprises the steps:

By in described through hole, discharging to described electrode application voltage, make this plasma generation gas flow to its other end simultaneously from an end of described through hole, in described through hole, produce plasma thus and generate gas with activate plasma; And

Spray the plasma generation gas of activation in object surfaces from the other end of described through hole.

26. method of plasma processing as claimed in claim 25, wherein this object comprises glass material, printed circuit board (PCB) and the resin molding that is used for flat-panel monitor.

27. a plasma processing apparatus comprises:

The pair of electrodes plate has a plurality of through holes;

Insulation board has a plurality of through holes, and this insulation board is arranged between the described battery lead plate, makes the lead to the hole site of described battery lead plate corresponding to the lead to the hole site of described insulation board;

Gas supply device is configured to that plasma is generated gas and is fed in a plurality of discharge spaces, and described discharge space is formed by the through hole of described battery lead plate and the through hole of described insulation board; And

Voltage bringing device is configured to apply voltage between described battery lead plate, to generate the plasma that plasma generates gas simultaneously in described discharge space.

28. a plasma processing apparatus comprises: tubular container has pair of electrodes and is arranged at insulation board between the described electrode; Gas supply device is configured to generate gas from an end supplying plasma of described tubular container; And voltage bringing device, be configured to applying voltage between the described electrode in described tubular container, to generate the plasma that this plasma generates gas, utilize the plasma that ejects from the other end of described tubular container that object is carried out surface treatment thus

Wherein, described electrode is provided by the pair of electrodes plate with a plurality of through holes, described insulation board has a plurality of through holes, described tubular container has a plurality of discharge spaces that the through hole by the through hole of described battery lead plate and described insulation board forms, and the plasma that plasma generates gas generates in described discharge space simultaneously by apply voltage between described battery lead plate, and ejects from the other end of described tubular container.

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