CN103182750A - Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal - Google Patents
Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal Download PDFInfo
- Publication number
- CN103182750A CN103182750A CN2011104520919A CN201110452091A CN103182750A CN 103182750 A CN103182750 A CN 103182750A CN 2011104520919 A CN2011104520919 A CN 2011104520919A CN 201110452091 A CN201110452091 A CN 201110452091A CN 103182750 A CN103182750 A CN 103182750A
- Authority
- CN
- China
- Prior art keywords
- crystal
- edge
- cutting
- cut
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for processing a reference surface by adopting the linear cutting of a gallium arsenide monocrystal, which comprises the steps: 1, using an X-ray diffraction orientation device to orient the crystal to set a crystal surface (100); 2, using an inside diameter slicer to cut a small surface in the direction (100), fixing the crystal on a clamping apparatus, adjusting an included angle between the crystal and a blade to be 45 degrees, and starting the slicer to cut the surface (100) to be used as the reference surface of a fixed cutting edge; 3, surveying and drawing a surface (110) which forms a 90-degree included angle with the small surface in the direction (100) with a T-square on the surface of the crystal, and marking a reference line with a marking pen; 4, fixing the crystal on the clamping apparatus of a diamond band saw edge cutting machine, starting a laser tool setting function, adjusting the path of the simulated cutting edge to enable the laser to be aligned with the reference line, and starting a band saw blade to adjust the feeding speed for completing the edge cutting; and 5, observing whether the surface is smooth or not after the completion of edge cutting, and carrying out fine grinding for correction. With the method, the levelness of the joint of the crystal and a graphite piece is effectively ensured, the crystal orientation accuracy of slicers is improved, and meanwhile, processing efficiency is greatly improved by being compared with that of manual grinding.
Description
Technical field
The present invention relates to a kind of processing method of arsenide gallium monocrystal line cutting datum level.
Background technology
GaAs (GaAs) be have that electron mobility height, forbidden band are wide, the semi-conducting material of characteristic such as direct band gap, consumed power are low, be widely used in fields such as communication, microelectronics, photoelectron.The slicing process of arsenide gallium monocrystal is the key link of following process, dual mode is arranged at present usually, circle cutting and line cutting in being respectively, the circle cutter has damage layer thickness little in the line cutting relatively, spillage of material is few, multi-disc cutting efficiency advantages of higher is especially occupied greater advantage in the cutting processing of major diameter LED reverse mounting type, be widely used gradually at present.
The arsenide gallium monocrystal appearance and size of horizontal Bridgman method (HB method) growth is irregular, be similar to " boat " type, if be directly installed on the jig of line cutting, because the crystal on side face flatness is relatively poor, graphite piece bonding difficulty with rule, be difficult to accurately location, finally can cause the crystal orientation error amount of the wafer that cuts out bigger than normal.
Usually the processing method that adopts polished for manual in the past, staff's both hands are by buttressing crystal, crystal is placed on the glass plate, configure lapping liquid with diamantane abrasive micropowder and pure water, crystal is walked " eight " word path, polish, HB method growth at present＜111〉arsenide gallium monocrystal, diameter is 2.5 inches, monocrystalline length is roughly at 450-500mm, weight is at 6-7kg, the labour intensity that polishes is bigger by hand, and production efficiency is very low, and the datum level that grinds is also lack of standardization, can not guarantee that datum level is strict＜110〉the direction crystal face, the crystal orientation can be departed from.
Summary of the invention
The object of the present invention is to provide a kind of processing method of arsenide gallium monocrystal line cutting datum level, adopt the band-saw diamond edge severing machine that crystal on side face is carried out cut edge, preparation line cutting position reference face, the degree of accuracy in raising wafer crystal orientation is enhanced productivity.
For achieving the above object, the present invention is by the following technical solutions:
A kind of processing method of arsenide gallium monocrystal line cutting datum level, this method may further comprise the steps:
(1) monocrystalline orientation: use the X-ray diffraction direction finder that crystal is carried out orientation, make＜100〉crystal face;
(2) cut the datum level of edge severing machine horizontal direction (x): use inside diameter slicer to cut＜100〉direction facets, crystal is fixed on the jig of inside diameter slicer, adjust crystal and blade angle at 45, the unlatching slicer cuts＜100〉face, as fixing cut edge datum level;
(3) mapping＜110〉cut surface: survey and draw out and＜100 with T-square at plane of crystal〉the direction facet become 90 ° of angles＜110〉face, and with marking pen token-based directrix;
(4) cut edge: crystal is fixed on the jig of band-saw diamond edge severing machine, opens laser tool setting function, adjust simulation cut edge path, make the laser alignment datum line, start bands for band and regulate feed speed, finish cut edge;
(5) surface grinding: after cut edge finishes, observe the whether smooth smooth fine grinding correction of carrying out of surface.
The band-saw diamond edge severing machine that the present invention adopts, its band saw motion mode is reciprocating type, and x, y axle mobile platform are by the bilinear guide supporting, and precision lead screw, stepper motor drive, and circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin
-1～2mmin
-1Between can accurately regulate cut edge speed; On the y axle mobile platform two-dimentional rotary fixture is housed, horizontal direction and vertical direction all can be regulated, jig adopts motor-driven and rotary handle is housed, can realize that point contacts cutting between saw blade and the crystal, cutting resistance does not change with cutting depth, makes cut edge surface smoothness and the depth of parallelism all reach requirement.
The band-saw diamond matrix of this band-saw diamond edge severing machine is stainless steel material, and matrix surface is electroplated 100 order diamond dust, and the diamond dust width is 1 ± 0.2mm.
The invention has the advantages that:
The present invention introduces a kind of new technical process-cut edge in the technical process with wire cutting method processing gallium arsenide wafer, replace craft in the past to polish.The growth of horizontal method＜111〉arsenide gallium monocrystal side gets＜110〉direction, cuts out a complete smooth plane with edge severing machine from head to the afterbody of monocrystalline.This method can effectively guarantee the flatness of crystal and graphite piece junction, improves the accuracy in section crystal orientation, polishes also relatively by hand simultaneously to have a very significant increase on working (machining) efficiency.
Description of drawings
Fig. 1 is process flow diagram of the present invention;
Fig. 2 is the fundamental diagram of the band-saw diamond edge severing machine of the present invention's employing.
The specific embodiment
The present invention will be further described by the following examples.
Be illustrated in figure 1 as process flow diagram of the present invention, the fundamental diagram of the band-saw diamond edge severing machine that the present invention adopts as shown in Figure 2, bands for band 6 is supported by its tensioning support wheel 1,2, during cutting, crystal 4 is fixed by the jig on the y axle mobile platform 5, is provided with two spacing guide wheels 3 in bands for band 6 and the contacted position of crystal 4.The band saw motion mode of this band-saw diamond edge severing machine is reciprocating type, and x axle mobile platform 7 and y axle mobile platform 5 be by the bilinear guide supporting, and precision lead screw, stepper motor drive, and circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin
-1～2mmin
-1Between can accurately regulate cut edge speed, on the y axle mobile platform 5 two-dimentional rotary fixture is housed, horizontal direction and vertical direction all can be regulated, jig adopts motor-driven and rotary handle is housed, can realize that point contacts cutting between saw blade and the crystal, cutting resistance does not change with cutting depth, makes cut edge surface smoothness and the depth of parallelism all reach requirement.
The band-saw diamond bar is selected TD-700 type bands for band for use in following examples, and appearance and size is (2730 * 8) mm, and the saw blade matrix selects for use Germany to produce stainless steel material, electroplates 100 order diamond dust, and the diamond dust width is 1 ± 0.2mm.
Embodiment 1
The processing of single crystal wire cutting datum level is carried out in present embodiment selection HB method growth＜111〉arsenide gallium monocrystal, and specific process is:
(1) use the X-ray diffraction direction finder that crystal is carried out orientation, make＜100〉crystal face.Adjustment GaAs＜100〉x-ray diffraction angle (θ angle) of crystal face be 33 ° 03 ' 15 "; reset back zero; pay special attention to baffle plate is aligned to position, 2 θ angle; crystal is placed on the centre position of ray path, and compress with compressing tablet, rotary handle demonstrates peak-peak; the positive and negative higher limit of recording level direction; change 180 ° counterclockwise and repeat aforesaid operations, the positive and negative lower limit of recording level direction is brought formula into: horizontal direction: θ 1=[± higher limit-(± lower limit)]/2.Then be rotated counterclockwise 90 °, determine the positive and negative higher limit of vertical direction, be rotated counterclockwise 180 ° again, determine that the positive and negative lower limit of vertical direction is brought formula into: vertical direction: θ 2=[± higher limit-(± lower limit)]/2;
(2) use inside diameter slicer to cut＜100〉direction facets, crystal is fixed on the jig of inside diameter slicer, adjust crystal and blade angle at 45, the unlatching slicer cuts＜100〉face, as fixing cut edge benchmark;
(3) survey and draw out and＜100 with T-square at plane of crystal〉the direction facet become 90 ° of angles＜110〉face, and with marking pen token-based directrix;
(4) crystal is fixed on the jig of edge severing machine, opens laser tool setting function, adjust simulation cut edge path, make the laser alignment datum line, start bands for band and regulate feed speed, finish cut edge;
(5) whether after cut edge finishes, it is smooth smooth to observe the surface, if there is defective such as ripple, uses 1000# diamantane abrasive micropowder to carry out the fine grinding correction.
Claims (3)
1. the processing method of arsenide gallium monocrystal line cutting datum level is characterized in that this method may further comprise the steps:
(1) monocrystalline orientation: use the X-ray diffraction direction finder that crystal is carried out orientation, make＜100〉crystal face;
(2) cut the datum level of edge severing machine horizontal direction: use inside diameter slicer to cut＜100〉direction facets, crystal is fixed on the jig of inside diameter slicer, adjust crystal and blade angle at 45, the unlatching slicer cuts＜100〉face, as fixing cut edge datum level;
(3) mapping＜110〉cut surface: survey and draw out and＜100 with T-square at plane of crystal〉the direction facet become 90 ° of angles＜110〉face, and with marking pen token-based directrix;
(4) cut edge: crystal is fixed on the jig of band-saw diamond edge severing machine, opens laser tool setting function, adjust simulation cut edge path, make the laser alignment datum line, start bands for band and regulate feed speed, finish cut edge;
(5) surface grinding: after cut edge finishes, observe the whether smooth smooth fine grinding correction of carrying out of surface.
2. arsenide gallium monocrystal line according to claim 1 cuts the processing method of datum level, it is characterized in that, the band saw motion mode of described band-saw diamond edge severing machine is reciprocating type, x, y axle mobile platform are by the bilinear guide supporting, precision lead screw, stepper motor drive, circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin
-1～2mmin
-1Between can accurately regulate cut edge speed; On the y axle mobile platform two-dimentional rotary fixture is housed, horizontal direction and vertical direction all can be regulated, and jig adopts motor-driven also rotary handle to be housed, and can realize that point contacts cutting between saw blade and the crystal, and cutting resistance does not change with cutting depth.
3. arsenide gallium monocrystal line according to claim 2 cuts the processing method of datum level, it is characterized in that, the band-saw diamond matrix of described band-saw diamond edge severing machine is stainless steel material, and matrix surface is electroplated 100 order diamond dust, and the diamond dust width is 1 ± 0.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452091.9A CN103182750B (en) | 2011-12-29 | 2011-12-29 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452091.9A CN103182750B (en) | 2011-12-29 | 2011-12-29 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103182750A true CN103182750A (en) | 2013-07-03 |
| CN103182750B CN103182750B (en) | 2015-03-25 |
Family
ID=48674323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110452091.9A Active CN103182750B (en) | 2011-12-29 | 2011-12-29 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103182750B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103802220A (en) * | 2014-03-04 | 2014-05-21 | 山西潞安太阳能科技有限责任公司 | Method for cutting off silicon single crystal rod |
| CN104526889A (en) * | 2014-11-19 | 2015-04-22 | 四川省三台水晶电子有限公司 | Method for manufacturing quartz crystal wafer for high-precision piezoelectric transducer |
| CN104846441A (en) * | 2015-05-28 | 2015-08-19 | 北京航空航天大学 | Cutting preparation method of nickel-based single-crystal alloy seed crystal for casting |
| CN106738390A (en) * | 2016-12-29 | 2017-05-31 | 中国电子科技集团公司第二研究所 | The oriented cutting method and positioning bonding device of a kind of crystal |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN108565666A (en) * | 2018-04-18 | 2018-09-21 | 苏州四海常晶光电材料有限公司 | Nd is processed using Brewster's angle:The method of YAG laser crystal |
| CN108666857A (en) * | 2018-04-18 | 2018-10-16 | 苏州四海常晶光电材料有限公司 | Cr is processed using Brewster's angle4+:The method of YAG crystal |
| CN110936506A (en) * | 2019-12-09 | 2020-03-31 | 济南晶众光电科技有限公司 | DKDP crystal automatic rod rotating machine and processing technology |
| CN111745305A (en) * | 2020-05-23 | 2020-10-09 | 山东大学 | Method for realizing surface orientation of diamond single crystal substrate |
| CN114311350A (en) * | 2022-03-15 | 2022-04-12 | 天通控股股份有限公司 | Head and tail cutting method for lithium tantalate crystal |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1439495A (en) * | 2003-04-02 | 2003-09-03 | 南开大学 | Method for accurate-oriented cutting crystals |
| CN1493443A (en) * | 2003-08-29 | 2004-05-05 | 袁建中 | Orientation method used in cutting crystal |
| CN101130265A (en) * | 2006-08-22 | 2008-02-27 | 北京有色金属研究总院 | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer |
| CN201044947Y (en) * | 2006-01-17 | 2008-04-09 | 李汶军 | Crystal face tropism processing X-ray position indicator |
| CN101994157A (en) * | 2010-03-22 | 2011-03-30 | 浙江星宇电子科技有限公司 | Method for opening single crystal 110-reference surface |
| CN102555086A (en) * | 2012-01-18 | 2012-07-11 | 浙江勒托能源科技有限公司 | Stainless steel band-saw blade with alternatively arranged large and small carborundum saw teeth |
| CN203004096U (en) * | 2012-12-24 | 2013-06-19 | 北京有色金属研究总院 | Fixture for slicing horizontal single crystals |
-
2011
- 2011-12-29 CN CN201110452091.9A patent/CN103182750B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1439495A (en) * | 2003-04-02 | 2003-09-03 | 南开大学 | Method for accurate-oriented cutting crystals |
| CN1493443A (en) * | 2003-08-29 | 2004-05-05 | 袁建中 | Orientation method used in cutting crystal |
| CN201044947Y (en) * | 2006-01-17 | 2008-04-09 | 李汶军 | Crystal face tropism processing X-ray position indicator |
| CN101130265A (en) * | 2006-08-22 | 2008-02-27 | 北京有色金属研究总院 | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer |
| CN101994157A (en) * | 2010-03-22 | 2011-03-30 | 浙江星宇电子科技有限公司 | Method for opening single crystal 110-reference surface |
| CN102555086A (en) * | 2012-01-18 | 2012-07-11 | 浙江勒托能源科技有限公司 | Stainless steel band-saw blade with alternatively arranged large and small carborundum saw teeth |
| CN203004096U (en) * | 2012-12-24 | 2013-06-19 | 北京有色金属研究总院 | Fixture for slicing horizontal single crystals |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103802220A (en) * | 2014-03-04 | 2014-05-21 | 山西潞安太阳能科技有限责任公司 | Method for cutting off silicon single crystal rod |
| CN104526889A (en) * | 2014-11-19 | 2015-04-22 | 四川省三台水晶电子有限公司 | Method for manufacturing quartz crystal wafer for high-precision piezoelectric transducer |
| CN104846441A (en) * | 2015-05-28 | 2015-08-19 | 北京航空航天大学 | Cutting preparation method of nickel-based single-crystal alloy seed crystal for casting |
| CN104846441B (en) * | 2015-05-28 | 2017-09-08 | 北京航空航天大学 | A kind of cutting preparation method cast with Crystal Nickel-based Superalloy seed crystal |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN106738390B (en) * | 2016-12-29 | 2019-06-04 | 中国电子科技集团公司第二研究所 | A kind of oriented cutting method of crystal |
| CN106738390A (en) * | 2016-12-29 | 2017-05-31 | 中国电子科技集团公司第二研究所 | The oriented cutting method and positioning bonding device of a kind of crystal |
| CN108565666A (en) * | 2018-04-18 | 2018-09-21 | 苏州四海常晶光电材料有限公司 | Nd is processed using Brewster's angle:The method of YAG laser crystal |
| CN108666857A (en) * | 2018-04-18 | 2018-10-16 | 苏州四海常晶光电材料有限公司 | Cr is processed using Brewster's angle4+:The method of YAG crystal |
| CN110936506A (en) * | 2019-12-09 | 2020-03-31 | 济南晶众光电科技有限公司 | DKDP crystal automatic rod rotating machine and processing technology |
| CN111745305A (en) * | 2020-05-23 | 2020-10-09 | 山东大学 | Method for realizing surface orientation of diamond single crystal substrate |
| CN111745305B (en) * | 2020-05-23 | 2022-03-04 | 山东大学 | Method for realizing surface orientation of diamond single crystal substrate |
| CN114311350A (en) * | 2022-03-15 | 2022-04-12 | 天通控股股份有限公司 | Head and tail cutting method for lithium tantalate crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103182750B (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103182750B (en) | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal | |
| CN100348391C (en) | Great diameter SiC monocrystal cutting method | |
| TW201440986A (en) | Method for slicing semiconductor single crystal ingot | |
| SG177942A1 (en) | Method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers | |
| CN1795077A (en) | Honing guide assembly | |
| CN102873770A (en) | Method for processing orientation-deflected seed crystals | |
| JP2011031386A (en) | Electro-deposition fixed abrasive grain wire and crystal slicing method using the same | |
| CN202291454U (en) | Groove positioning type welding polycrystalline diamond milling blade | |
| CN111633479A (en) | Method for repairing scribing cutter for gallium arsenide wafer | |
| JP2013258243A (en) | Manufacturing method and manufacturing device of compound semiconductor substrate | |
| WO2010103947A1 (en) | Grooving tool for thin film solar cell | |
| CN108788930B (en) | A kind of ultraprecise based on CCD camera on-position measure is to the skill in using a kitchen knife in cookery | |
| CN214080919U (en) | Grinding repair device and silicon rod processing equipment | |
| CN1439495A (en) | Method for accurate-oriented cutting crystals | |
| CN201816147U (en) | Semiconductor chip splitting tool | |
| CN201979618U (en) | Bonding clamp for single crystal rod | |
| CN107639755B (en) | A kind of processing method of graphite vanes pump blade | |
| CN200981169Y (en) | Oriented processing flat grinder | |
| CN213615947U (en) | Semi-automatic chamfering device for ceramic unit | |
| CN208615069U (en) | A kind of ceramic tile cutting means | |
| CN107214862B (en) | A kind of isosceles trapezoid tablet cutting tool and workpiece localization method | |
| CN217530455U (en) | A anchor clamps that is used for milling cutter to polish and is equipped with location benchmark | |
| JPH1015795A (en) | Supporting device and grinding device for correcting orientation of single crystal material | |
| CN205765344U (en) | The building stones Plane surface grinding machine can tested for stone surface | |
| CN212094652U (en) | Grinding device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130802 Free format text: FORMER OWNER: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Effective date: 20130802 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100088 XICHENG, BEIJING TO: 065001 LANGFANG, HEBEI PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20130802 Address after: 065001 hi tech Development Zone, Hebei, Langfang Applicant after: Youyan Photoelectric New Material Co.,Ltd. Address before: 100088, 2, Xinjie street, Beijing, Beijing, Xicheng District Applicant before: General Research Institute for Nonferrous Metals Applicant before: Youyan Photoelectric New Material Co.,Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220316 Address after: 065201 South Youyan Technology Group Co., Ltd. No.2, Xingdu village, Yanjiao, Sanhe City, Langfang City, Hebei Province Patentee after: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd. Address before: 065001 Langfang hi tech Development Zone, Hebei Province Patentee before: GRINM ELECTRO-OPTIC MATERIALS CO.,LTD. |
|
| TR01 | Transfer of patent right |