CN101130265A - Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer - Google Patents
Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer Download PDFInfo
- Publication number
- CN101130265A CN101130265A CNA2006101125141A CN200610112514A CN101130265A CN 101130265 A CN101130265 A CN 101130265A CN A2006101125141 A CNA2006101125141 A CN A2006101125141A CN 200610112514 A CN200610112514 A CN 200610112514A CN 101130265 A CN101130265 A CN 101130265A
- Authority
- CN
- China
- Prior art keywords
- cutting
- crystal
- gallium arsenide
- wafer
- inside diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to a process that inside diameter slicing machine is used to cut level gallium arsenide single-crystal wafer, which comprises following procedures. (1) edge cutting treatment is carried out for level gallium arsenide single-crystal ingot with the length of 50-500mm. (2) the single-crystal ingot is bonded with the surface of graphite strip and the surface of graphite support. (3) bonded single-crystal ingot is fixed on the ingot-pushing device of inside diameter slicing machine. (4) cutting blade is installed; switch is on and the machine runs. (5) working table is lift and a piece of wafer is cut to confirm crystal orientation; after confirmation calibrating thickness of single-wafer cutting is set; said cutting orientations are parts of (100) to the nearest [100] and [011]; the angle between the crystal orientation and the growth orientation of gallium arsenide single crystal is 54degree 44'. (6) cutting speed is set to cut wafers in multiple piece automatically and continuously. (7) after the whole single-crystal ingot is cut cutting blade is washed and machine is off. Level gallium arsenide single-crystal wafer with the diameter of Phi50. 8mm-Phi76mm and the thickness of 280um-470um can be cut in the process and average production yield can be more than 95%. Production stability and repeatability are good and mass production can be realized.
Description
Technical field
The present invention relates to a kind of technology of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer
Background technology
Initial stage in the sixties, at the cutting method of vertical pulling semiconductor single crystal material from use the processing of cylindrical formula blade turn in the processing of circle formula blade be a big technological progress.Developed countries such as Japan and the United States have begun to produce in batches the arsenide gallium monocrystal material in the eighties, but the Wafer Machining of its use is holded in close confidence, and it is very few to publish an article.At present, the horizontal gallium arsenide wafer is used widely in the world, circle microtomy and (many) lines microtomy in its cutting method has.It is Φ 50.8mm single-chip that domestic (many) lines patterning method technology only rests on cutting diameter at present.And on the international market to diameter of phi 63.5mm-Φ 76mm; Thickness is the horizontal gallium arsenide wafer ten minutes demand of 280um-300um, and this updates with regard to the microtomy that needs us.
As everyone knows, compound arsenide gallium monocrystal material is compared with simple substance monocrystal materials such as SiGes, its mechanical performance relatively poor (the critical shearing stress-CRSS that distinguishes of GaAs and Si is respectively 0.4MPa and 1.85MPa), hardness low (Mohs' hardness is 4.5), fragility is big, very easily cleavage [cleavage surface is (110)], fragmentation.And horizontal GaAs monocrystalline all cuts sth. askew, when promptly cutting in the circular knife plane vertically form an angle with single crystal rod [(111) and (100) angle be 54 ° 44 '], it is bigger to cut the single-chip technical difficulty.Early stage domestic employing inside diameter slicer cutting horizontal gallium arsenide wafer, diameter is all less than Φ 50mm, thickness is the thinnest also can only to reach 470um, and the crystal orientation depart from tolerance and can only be controlled at ± 30 '.
In slicing processes, the residual stress problem that horizontal GaAs wafer comprises mechanical stress and thermal stress because of mechanicals efforts causes producing is difficult to control.For the chip warpage degree, flexibility, the quality control of total thickness variations and wafer surface fineness etc. is also being studied in the exploration always.
In addition, inside diameter slicer is carried out scrap build, improve the cutter technology of repairing, optimize the cutting condition, reduce the slice processing cost, improve section output capacity (yield rate+piece rate), improving the slice processing economic benefit is that we pursue always.
Summary of the invention
The technology that the purpose of this invention is to provide a kind of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer, but this technology cutting diameter is Φ 50.8mm-Φ 76mm, thickness is the horizontal gallium arsenide single-crystal wafer of 280um-470um, average yield rate reaches more than 95%, and production stability and good reproducibility can be realized producing in enormous quantities.
For achieving the above object, the present invention by the following technical solutions:
A kind of technology of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer, it may further comprise the steps:
(1), be that the horizontal gallium arsenide single crystal rod of 50-500mm is made cut edge and handled with length;
(2), single crystal rod and graphite bar surface, graphite support surface are bonding;
(3), bonding single crystal rod is fixed on the pushing away on the ingot device of inside diameter slicer;
(4), cutting knife, unlatching water, electricity, gas switch, machine operation are installed;
(5), starting workbench rises, cutting a wafer carries out the crystal orientation and determines work, fix the back and set monolithic cutting calibrated thickness, described cutting crystal orientation be nearest [110] gang and [011] gang of (100) deflection, it and the arsenide gallium monocrystal direction of growth (111) difference angle be 54 ° 44 ';
(6), set cutting speed, carry out the continuous cut crystal work of automatic multi-disc;
(7), finish the cutting of whole single crystal rod after, the flushing blade press stop key and is shut down.
Described blade type: Φ 422mm, sword is thick: the 300um material: stainless steel knife base, nickel closes gold-plated emery;
Blade internal diameter tensor: 0.85mm-1.05mm, concentricity≤0.002mm;
Cutter ring Circular Run-out Tolerance deviation :≤0.005mm;
Cutter ring radial run-out deviation :≤0.02mm;
Blade alignment pin radial run-out :≤0.015mm;
Workpiece feed accuracy (step pitch error) ± 0.005mm;
Rotating speed of flail: 1100-1600r/min; Cutting speed: 10-30mm/min.
Coolant temperature scope: 10-25 ℃; Coolant flow: 600-850ml/min.
Can judge that cutter is inclined to one side according to the tracker on the equipment during blade generation deformation, in time repair cutter and reach with the deformation of blade in the control cutting process and reduce the crooked of wafer or the wafer bending degree is controlled in certain number range.
When blade deformation numerical value during greater than 4um or less than-4um, stop cut crystal, the decline workbench carries out craft and repaiies cutter under normally rotation situation of blade, cut in-0.5um-0.5um scope up to blade deformation numerical value again.
Used equipment is the rotary workbench of TS type horizontal air bearing (but the corner cut degree reaches 61 degree) inside diameter slicer, the crystal orientation of cutting be (100) nearest [110] gang of deflection and [011] gang, it and the arsenide gallium monocrystal direction of growth (111) difference angle be 54 ° 44 '.
Repair the cutter method and generally have two kinds:
One, cuts Al
2O
3Or SiC grinding stone corase grind cutter (speed is cut 3 to 15 times from fast to slow continuously) is cut the monocrystal silicon fine grinding again.Cutting speed and wafer surface quality are increased, reduce the flexibility of wafer surely but differ.
Two, the case of bending according to blade tracker and wafer adopts the manual cutter method (along 45 °≤a≤60 ° direction, a is the angle of whetstone and level) [shown in figure (2)] of repairing can control the deformation of blade at cutting process.What be worth prompting is: best cutting result and blade life depend on directly also whether the operator selects suitable whetstone at the appropriate time and on sound lines blade is carried out reconditioning except the quality that depends on blade itself.
Effect of the present invention:
1, optimize the cutting condition, can cutting horizontal GaAs single-chip diameter range φ 51mm-φ 76mm with air bearing formula inside diameter slicer; Thickness range 280um-470um, average yield rate reaches more than 95%, and production stability and repeatability are very good, can realize producing in enormous quantities.
2, its corresponding TTV of wafer (maximum ga(u)ge and minimum thickness poor) variation of cutting all thickness, all TTV is lower than 20um, the above wafer TTV of cutting 470um is lower than 10um, the thin slice of cutting 320 ± 10um and 280 ± 10um, TTV does not significantly increase, but the thickness decentralization has slight variation.
3, optimize the cutting condition, can cut the horizontal GaAs single-chip that surface smoothness is good, the damage layer is lower with air bearing formula inside diameter slicer, Key Quality Indicator as for semiconductor wafer: total thickness variations, angularity, flexibility, crystal orientation deviation be ± 3 ' and residual stress at the bottom of or the like can well satisfy the processing request of subsequent handling.
Description of drawings
Fig. 1: crystal growth direction and cut direction schematic diagram
Fig. 2: repair nose angle degree schematic diagram
Among Fig. 1, Fig. 2,1 is solid liquid interface, and wafer 2 is along the cutting of (100) faces, and 3 be the wafer cross-section normal, and 4 is the monocrystalline head, and 5 is (100) wafer cross-section normal opposite direction, and 6 is the monocrystalline afterbody, the direction of growth of normal direction and crystal (111) face angle be 54 ° 44 '.Among Fig. 2,8 (Fn) are the radial effect power of monocrystal to blade, and 7 is horizontal plane, and a is the angle of whetstone and horizontal plane, and 9 is blade, and 10 is the cutter base.
Embodiment 1.
Adopt technology cutting horizontal gallium arsenide wafer specification of the present invention to be: crystal orientation (100) ± 0.5 °, diameter of phi 50.8mm, thickness 470 ± 50um, circular wafer.
1, the technical indicator of equipment and equipment:
The rotary workbench of TS type horizontal air bearing (but the corner cut degree reaches 61 degree) inside diameter slicer (this equipment is that Switzerland plum Burger company produces and sells).
Blade type: Φ 422mm, sword is thick: the 300um material: stainless steel knife base, nickel closes gold-plated emery
Blade internal diameter tensor: 0.85mm-1.05mm, concentricity≤0.002mm
Cutter ring Circular Run-out Tolerance deviation :≤0.006mm
Cutter ring radial run-out deviation :≤0.03mm
Blade alignment pin radial run-out :≤0.015mm
Workpiece feed accuracy (step pitch error) ± 0.005mm
2, process conditions
Rotating speed of flail: 1100-1600r/min
Cutting speed: 20-30mm/min
Cooling agent: demineralized water (industrial pure water)
Coolant temperature: 10-25 ℃
Coolant flow: 600-850ml/min
Cut workpiece: qualified length is the horizontal GaAs single crystal rod of 50-500mm
3. operating procedure:
1. qualified horizontal gallium arsenide single crystal rod is made cut edge and handle, so that itself and graphite bar carry out bonding fully.
2. monocrystalline is bonding, and cleaning is carried out with absolute ethyl alcohol in qualified monocrystalline bottom and end face, graphite bar surface, graphite support surface.Prevent the bonding quality of pollutant effect glue.Used bonding agent is petrel board adhesive A (white) and the adhesive B (redness) that chemical plant, Yan'an, Tianjin produces, and two kinds of adhesive by volume are about white in proportion: red=5: 1 epoxy glue.
3. the garden slicer pushes away on the ingot device in the monocrystalline that glues being fixed on
4. open the switch of " water, electricity, gas " and exhaust equipment, compressed-air actuated atmospheric pressure value is at 0.6Mpa-0.8Mpa.
5. open the slicer total power switch, start swivel, open cooling agent (coolant), watch coolant flow and temperature, watch rotating speed of flail.
6. start workbench and rise, cut a wafer and carry out " orientation " (crystal orientation is determined) work, fix the back and set monolithic cutting calibrated thickness.
7. set suitable cutting speed, carry out the continuous cut crystal work of automatic multi-disc.
8. after finishing whole single crystal rod cutting, the flushing blade is pressed the stop key shutdown.
Embodiment 2
Adopt technology cutting horizontal gallium arsenide wafer specification of the present invention to be: crystal orientation (100) are (110) ± 0.5 ° partially, diameter of phi 63.5mm, thickness 350 ± 50um, circular wafer.
1, equipment and device specifications:
The rotary workbench of TS type horizontal air bearing (can and angle reach 61 the degree) inside diameter slicer.
Blade type: Φ 422mm, sword is thick: the 300um material: stainless steel knife base, nickel closes gold-plated emery
Blade internal diameter tensor: 0.9mm-0.95mm, concentricity≤0.002mm
Cutter ring Circular Run-out Tolerance deviation :≤0.0055mm
Cutter ring radial run-out deviation :≤0.025mm
Blade alignment pin radial run-out :≤0.015mm
Workpiece feed accuracy (step pitch error) ± 0.005mm
2, process conditions
Rotating speed of flail: 1100-1400r/min
Cutting speed: 15-30mm/min
Cooling agent: demineralized water (industrial pure water)
Coolant temperature: 15-20 ℃
Coolant flow: 600-700ml/min
Cut workpiece: qualified length is the horizontal GaAs single crystal rod of 50-500mm
Operating procedure is with embodiment 1.
Embodiment 3
Adopt technology cutting horizontal gallium arsenide wafer specification of the present invention to be: crystal orientation (100) are (011) ± 0.1 ° partially, diameter of phi 63.5mm-76mm, thickness 280 ± 20um, circular wafer.
1, equipment and device specifications:
The rotary workbench of TS type horizontal air bearing (can and angle reach 61 the degree) inside diameter slicer.
Blade internal diameter tensor: 0.95mm-1.05mm, concentricity≤0.002mm
Cutter ring Circular Run-out Tolerance deviation :≤0.005mm
Cutter ring radial run-out deviation :≤0.02mm
Blade alignment pin radial run-out :≤0.015mm
Workpiece feed accuracy (step pitch error) ± 0.005mm
2, process conditions
Rotating speed of flail: 1100-1250r/min
Cutting speed: 10-25mm/min
Cooling agent: demineralized water (industrial pure water)
Coolant temperature: 10-20 ℃
Coolant flow: 600-650ml/min
Cut workpiece: qualified length is that the horizontal GaAs single crystal rod of 50-500mm operating procedure is with embodiment 1.
Claims (5)
1. the technology of a cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer, it is characterized in that: it may further comprise the steps:
(1), be that the horizontal gallium arsenide single crystal rod of 50-500mm is made cut edge and handled with length;
(2), single crystal rod and graphite bar surface, graphite support surface are bonding;
(3), bonding single crystal rod is fixed on the pushing away on the ingot device of inside diameter slicer;
(4), cutting knife, unlatching water, electricity, gas switch, machine operation are installed;
(5), starting workbench rises, cutting a wafer carries out the crystal orientation and determines work, fix the back and set monolithic cutting calibrated thickness, described cutting crystal orientation is nearest [110] gang and [011] gang of (100) deflection, and it and the arsenide gallium monocrystal direction of growth (111) difference angle are 54 ° of 44 ＇;
(6), set cutting speed, carry out the continuous cut crystal work of automatic multi-disc;
(7), finish the cutting of whole single crystal rod after, the flushing blade press stop key and is shut down.
2. the technology of a kind of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer according to claim 1 is characterized in that:
Described blade type: Φ 422mm, sword is thick: the 300um material: stainless steel knife base, nickel closes gold-plated emery;
Blade internal diameter tensor: 0.85mm-1.05mm, concentricity≤0.002mm;
Cutter ring Circular Run-out Tolerance deviation :≤0.005mm;
Cutter ring radial run-out deviation :≤0.02mm;
Blade alignment pin radial run-out :≤0.015mm;
Workpiece feed accuracy (step pitch error) ± 0.005mm;
3. the technology of a kind of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer according to claim 1 and 2 is characterized in that: rotating speed of flail: 1100-1600r/min; Cutting speed: 10-30mm/min.
4. the technology of a kind of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer according to claim 1 and 2 is characterized in that: coolant temperature scope: 10-25 ℃; Coolant flow: 600-850ml/min.
5. the technology of a kind of cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer according to claim 1 and 2, it is characterized in that: when blade deformation numerical value during greater than 4um or less than-4um, stop cut crystal, the decline workbench, under normally rotation situation of blade, carry out craft and repair cutter, in-0.5um-0.5um scope, cut again up to blade deformation numerical value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101125141A CN101130265A (en) | 2006-08-22 | 2006-08-22 | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101125141A CN101130265A (en) | 2006-08-22 | 2006-08-22 | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101130265A true CN101130265A (en) | 2008-02-27 |
Family
ID=39127751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101125141A Pending CN101130265A (en) | 2006-08-22 | 2006-08-22 | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101130265A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102107461A (en) * | 2010-12-24 | 2011-06-29 | 江苏大学 | Seed crystal cutting machine |
| CN102555081A (en) * | 2010-12-28 | 2012-07-11 | 北京有色金属研究总院 | Precise forming method for machining germanium window part shape by inner circle slicer |
| CN103182750A (en) * | 2011-12-29 | 2013-07-03 | 北京有色金属研究总院 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
| CN104647614A (en) * | 2013-11-25 | 2015-05-27 | 北京国晶辉红外光学科技有限公司 | Method for enabling inside diameter slicer to achieve continuous slicing without stop |
| CN107030909A (en) * | 2017-05-15 | 2017-08-11 | 南通综艺新材料有限公司 | A kind of use diamond wire blocks the cutting technique of polycrystal silicon ingot |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN114311350A (en) * | 2022-03-15 | 2022-04-12 | 天通控股股份有限公司 | Head and tail cutting method for lithium tantalate crystal |
| CN114603728A (en) * | 2020-12-03 | 2022-06-10 | 天津市环智新能源技术有限公司 | Solar silicon wafer and damage layer thickness control method thereof |
| CN114670344A (en) * | 2022-03-25 | 2022-06-28 | 中国人民大学 | Nondestructive cleavage device and method for high-orientation pyrolytic graphite single crystal |
-
2006
- 2006-08-22 CN CNA2006101125141A patent/CN101130265A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102107461A (en) * | 2010-12-24 | 2011-06-29 | 江苏大学 | Seed crystal cutting machine |
| CN102107461B (en) * | 2010-12-24 | 2014-02-12 | 江苏大学 | Seed crystal cutting machine |
| CN102555081A (en) * | 2010-12-28 | 2012-07-11 | 北京有色金属研究总院 | Precise forming method for machining germanium window part shape by inner circle slicer |
| CN103182750A (en) * | 2011-12-29 | 2013-07-03 | 北京有色金属研究总院 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
| CN103182750B (en) * | 2011-12-29 | 2015-03-25 | 有研光电新材料有限责任公司 | Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal |
| CN104647614B (en) * | 2013-11-25 | 2016-06-29 | 有研光电新材料有限责任公司 | A kind of realize the method that serial section do not shut down by inside diameter slicer |
| CN104647614A (en) * | 2013-11-25 | 2015-05-27 | 北京国晶辉红外光学科技有限公司 | Method for enabling inside diameter slicer to achieve continuous slicing without stop |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN107030909A (en) * | 2017-05-15 | 2017-08-11 | 南通综艺新材料有限公司 | A kind of use diamond wire blocks the cutting technique of polycrystal silicon ingot |
| CN114603728A (en) * | 2020-12-03 | 2022-06-10 | 天津市环智新能源技术有限公司 | Solar silicon wafer and damage layer thickness control method thereof |
| CN114311350A (en) * | 2022-03-15 | 2022-04-12 | 天通控股股份有限公司 | Head and tail cutting method for lithium tantalate crystal |
| CN114670344A (en) * | 2022-03-25 | 2022-06-28 | 中国人民大学 | Nondestructive cleavage device and method for high-orientation pyrolytic graphite single crystal |
| CN114670344B (en) * | 2022-03-25 | 2023-10-31 | 中国人民大学 | Nondestructive cleavage device and method for high-orientation pyrolytic graphite monocrystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101130265A (en) | Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer | |
| CN100348391C (en) | Great diameter SiC monocrystal cutting method | |
| CN100365774C (en) | Semiconductor wafer manufacturing method and wafer | |
| CN102528077A (en) | Processing method of ferrous metal super-finishing surface | |
| CN107513696B (en) | Diamond coatings brill/milling cutter grinds pretreated method | |
| CN112620973B (en) | Unidirectional three-layer bidirectional six-stage step cutting process for silicon carbide wafer | |
| CN110774170B (en) | Grinding wheel tooth for thinning sapphire substrate | |
| CN105751393A (en) | Machining machine of sapphire wafer with high edge quality | |
| CN104551871A (en) | Lithium tantalate wafer grinding method | |
| US20010032583A1 (en) | Method of producing a polycrystalline silicon rod | |
| CN110640552B (en) | Processing method of easily-cleaved semiconductor crystal | |
| CN111633479A (en) | Method for repairing scribing cutter for gallium arsenide wafer | |
| TW507283B (en) | Method of processing silicon single crystal ingot | |
| CN113172780A (en) | Scribing structure for cutting silicon carbide and online trimming method thereof | |
| CN101579843B (en) | Method for manufacturing man-made polycrystalline diamond nozzle | |
| CN112287543A (en) | Gallium nitride wafer production process parameter design method | |
| JP2009051678A (en) | Manufacturing method of sapphire substrate | |
| Shen et al. | Study on the influence of variation of contact arc zone on the single-pass sawing of sapphire wafer | |
| CN103660051B (en) | Comprise crisp hard material cutting diamond wire and the diced system thereof of crystalline silicon | |
| CN109760220B (en) | Method for thinning substrate of semiconductor photoelectric device | |
| CN220463491U (en) | Polishing structure | |
| CN108788262B (en) | A kind of target seeker slot array antenna processing method | |
| Struth et al. | Wafer Slicing | |
| CN114318531A (en) | Stripping method applied to MPCVD large-size diamond polycrystal | |
| CN116949577A (en) | Processing method of high-precision large-size gallium nitride single crystal substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080227 |