CN103177997B - For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method - Google Patents
For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method Download PDFInfo
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- CN103177997B CN103177997B CN201110434746.XA CN201110434746A CN103177997B CN 103177997 B CN103177997 B CN 103177997B CN 201110434746 A CN201110434746 A CN 201110434746A CN 103177997 B CN103177997 B CN 103177997B
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- electrostatic chuck
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Abstract
The invention discloses a kind of for processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method, relate to semiconductor process technique field.This electrostatic chuck includes the insulating barrier for supporting wafer；With the light beam source can being installed on above the first surface of described insulating barrier.The direction of the light beam of light beam source and output adjustable.Coordinate with fluid cooling system, the temperature being attracted to the wafer above ESC is regulated by the direction and output controlling light beam source, it is thus possible to preferably adjust the discordance of temperature, wafer temperature concordance can be greatly improved, particularly improve non-radial temperature discordance.
Description
Technical field
The present invention relates to semiconductor process technique field, particularly to a kind of for processing wafer
Reaction unit, electrostatic chuck (ElectroStatic Chuck, ESC) and wafer temperature control
Method.
Background technology
Wafer (Wafer) (such as, Silicon Wafer) is used to manufacture the base semiconductor of chip
Material, is also most important material in semiconductor industry.On wafer, the chip of making is final
Quality has direct relation with the quality of the wafer used when starting from.If in original wafer
Defective, then on final chip, also to there will certainly be defect.For can be used for manufacturing quasiconductor
For the wafer of device, need to meet strict material and desired physical considerations.
Cost is the key factor in semiconductor industry.Based on cost consideration, modern semiconductors skill
On the one hand art reduces the physical size of the device manufactured on wafer, on the other hand expands wafer
Size.Above-mentioned two direction can produce more chip with similar cost.Along with wafer
Size also from 5 inches (Inch), 8 inches, develop into present 12 inch, 18 inches,
Bigger size even of future generation, various new problems the most constantly occur.
It is a weight in wafer related process that concordance controls (Uniformity Control)
Want problem.Along with wafer size becomes big, concordance controls to become more crucial, and will become
The significant challenge of technological development.
ESC cooling system (Coolant system) controls for wafer temperature concordance
Important means.Existing ESC cooling system is that ring-type (Ring type) carries more
(Multi-Zone) design.This being designed to arranges different temperature for different cooling zones,
With temperature consistency in adjustment wafer.This design can preferably adjust radially (radial) temperature
Discordance.But, for non-radial temperature discordance distribution, existing ESC sets
Meter can not carry out consistency adjustment well.Fig. 1 shows that existing ESC designs for temperature
The adjustment result of degree discordance.As it is shown in figure 1, this ESC design can adjust radially temperature
Degree distribution discordance, but can not adjust well for non-radial part, temperature range
(Range) even become much larger.Additionally, the temperature control precision of existing cooling system is inadequate.
Summary of the invention
In view of problem above proposes the present invention.
It is an object of the present invention to provide the technology of a kind of electrostatic chuck for attracting wafer
Scheme.
According to the first aspect of the invention, it is provided that a kind of electrostatic chuck, including: insulating barrier,
This insulating barrier has the first surface supporting wafer；With the first table that can be installed on this insulating barrier
Light beam source (Light Beam Source) above face.
Preferably, light beam source the direction of light beam and output adjustable.
Preferably, this electrostatic chuck also includes: light source controller, is connected with this light beam source, uses
In the direction of light beam and the output that control this light beam source.
Preferably, this electrostatic chuck also includes: multiple hygrosensors, is used for separately detecting suction
Invest the temperature of the diverse location of wafer on this electrostatic chuck；This light source controller is with the plurality of
Hygrosensor is connected, and controls this light beam for the temperature detected according to the plurality of hygrosensor
The direction of the light beam in source and output.
Preferably, this light beam source is lasing light emitter or ordinary light source.
Preferably, state light beam source and can send short wavelength, high-octane light beam.
Preferably, light beam source includes light source and light beam refraction/reflection system.
Preferably, this electrostatic chuck also includes: be positioned at the stream below the first surface of this insulating barrier
Body cooling system.
According to the second aspect of the invention, it is provided that a kind of reaction unit for processing wafer, bag
Including: chamber, for supporting the electrostatic chuck as above of wafer in this chamber, light beam source is installed
The top of the first surface of insulating barrier in chamber.
According to the third aspect of the invention we, it is provided that a kind of wafer temperature control method, including: really
Determining beam direction and the output of light beam source in electrostatic chuck, electrostatic chuck includes insulating barrier,
Insulating barrier has the first surface supporting wafer, and light beam source can be installed on the first table of insulating barrier
Above face；Beam direction according to light beam source and output power light beam source are to adjust wafer
Temperature.
Preferably, the method also includes: detection is adsorbed in the wafer on described electrostatic chuck not
The temperature of co-located；The temperature of the diverse location according to wafer determines temperature-compensating figure；Determine quiet
In electricity sucker, beam direction and the output of light beam source include: determine quiet according to temperature-compensating figure
The beam direction of light beam source and output in electricity sucker.
Preferably, the temperature bag of the diverse location of the wafer that described detection is adsorbed on electrostatic chuck
Include: the temperature on the predetermined pattern position of the wafer that detection is adsorbed on electrostatic chuck.
Preferably, light beam source can send short wavelength, high-octane light beam.
Preferably, the method also includes: by being positioned at the fluid below the first surface of insulating barrier
Cooling system combines light beam source and controls the temperature of described wafer.
An advantage of the invention that, can be more smart by the light beam source controlled on electrostatic chuck
Carefully control the temperature of wafer.
It is another advantage of the present invention that and can be changed by the light beam source on control electrostatic chuck
The non-radial discordance of kind wafer temperature.
By detailed description to the exemplary embodiment of the present invention referring to the drawings, the present invention
Further feature and advantage will be made apparent from.
Accompanying drawing explanation
The accompanying drawing of the part constituting description describes embodiments of the invention, and together with saying
Bright book is together for explaining the principle of the present invention.
Referring to the drawings, according to detailed description below, the present invention can be more clearly understood from,
Wherein:
Fig. 1 illustrates that in prior art, wafer temperature based on ring-type many bands cooling system compensation is shown
Figure.
Fig. 2 illustrates an embodiment of the reaction unit for processing wafer according to the present invention
Structure chart.
Fig. 3 illustrates according to for processing the structure of another embodiment of the reaction unit of wafer
Figure.
Fig. 4 illustrates the flow process of an embodiment of the wafer temperature control method according to the present invention
Figure.
Fig. 5 illustrates the stream of another embodiment of the wafer temperature control method according to the present invention
Cheng Tu.
Fig. 6 illustrates the stream of another embodiment of the wafer temperature control method according to the present invention
Cheng Tu.
Fig. 7 illustrates the schematic diagram of the application examples of the wafer temperature control according to the present invention.
Detailed description of the invention
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should be noted that
Arrive: unless specifically stated otherwise, the parts illustrated the most in these embodiments and the phase of step
Layout, numerical expression and numerical value are not limited the scope of the invention.
Simultaneously, it should be appreciated that for the ease of describing, the chi of the various piece shown in accompanying drawing
Very little is not to draw according to actual proportionate relationship.
Description only actually at least one exemplary embodiment is illustrative below, certainly
Not as to the present invention and application thereof or any restriction of use.
May not make in detail for technology, method and apparatus known to person of ordinary skill in the relevant
Thin discussion, but in the appropriate case, technology, method and apparatus should be considered to authorize description
A part.
Shown here with in all examples discussed, any occurrence should be construed as merely
Exemplary rather than conduct limits.Therefore, other example of exemplary embodiment can have
There is different values.
It should also be noted that similar label and letter expression similar terms in following accompanying drawing, therefore,
The most a certain Xiang Yi accompanying drawing is defined, then need not it is carried out in accompanying drawing subsequently
Discussed further.
The basic conception of the embodiment of the present invention is to provide light beam source in the reaction chamber, passes through light beam source
With the temperature that fluid cooling system (Fluid coolant system) controls wafer.
Fig. 2 illustrates an embodiment of the reaction unit for processing wafer according to the present invention
Structure chart.As in figure 2 it is shown, in this embodiment, reaction unit includes chamber 200, at chamber
For supporting the electrostatic chuck 21 of wafer 25 in 200.Electrostatic chuck 21 has and internally applies
From the battery lead plate of DC voltage or the conductive gate 23 of ESC power supply, utilize by this applying
Coulomb force or Johnsen-Rahbek power that DC voltage produces are adsorbed and keep wafer 25.
Electrostatic chuck 21 includes the insulating barrier for supporting wafer, and this insulating barrier has support wafer 25
First surface 22.It is arranged above light beam source 26, light beam source 26 at first surface 22
Direction and the output of the light beam 27 sent are adjustable.Light beam source 26 is ordinary light source or swashs
Radiant, the light beam sent can be general visible, infrared ray or ultraviolet.?
In one embodiment, use the short-wavelength light that energy comparison is high, such as, short wavelength laser.Ripple
Long distribution is concentrated, and directionality is good, it is simple to beam direction, the accurate control of position.Can pass through
Refraction/reflection system controls the direction of the light beam that light source sends.Label 28 represent in chamber etc.
Gas ions.By controlling direction and the output of the light beam that light beam source sends, quilt can be adjusted
The temperature of absorption wafer on ESC such that it is able to preferably adjust the inconsistent of temperature
Property, wafer temperature concordance can be greatly improved, particularly improve non-radial temperature discordance.
In one embodiment, electrostatic chuck 21 also has fluid cooling system.Fluid cools down
System is positioned at the lower section of first surface 22, ring-type many including extend the most in a circumferential direction
Band cryogen chamber 24, from ESC cooler (not shown) through cold-producing medium pipe arrangement to this system
Cold-producing medium (such as, cooling water, the liquid helium (He) of circulation supply set point of temperature in cryogen room 24
Deng), utilize the temperature of this cold-producing medium to control to be adsorbed being maintained at the wafer 25 above ESC
Treatment temperature.Light beam source and fluid cooling system coordinate, it is possible to preferably adjust the temperature of wafer
Degree, is greatly improved wafer temperature concordance, improves non-radial temperature discordance.Except and pass
The fluid cooling system of system coordinates, and light beam source can also coordinate with other cooling system.
In one embodiment, direction and the output of light beam source shows as by the position of multiple points
Put the motion track of composition and correspond to the output of each point.Each point can irradiate solid
The fixed time；Or different points is corresponding to different irradiation times, during according to the irradiation of this point
Between and average irradiation power determine the output of this point.For example, it is possible to crystal column surface is carried out
Line by line (or by column) scanning, it is also possible to crystal column surface is scanned successively according to concentric circular, it is possible to
So that each point is scanned successively, such as, the importance put according to each or need temperature-compensating
Intensity scan successively.
Fig. 3 illustrates that the present invention is for processing the knot of another embodiment of the reaction unit of wafer
Composition.As it is shown on figure 3, ESC 21 also includes the light source controller being connected with light beam source 26
30.Light source controller 30 can control direction and the output of the light beam 27 that light beam source 26 sends
Power.ESC 21 also includes the multiple hygrosensors 31 being located therein, multiple temperature sensings
The temperature of the diverse location of the wafer that device 31 detection is adsorbed on electrostatic chuck.Light source controller
30 be connected with hygrosensor 31, according to temperature and the input of hygrosensor 31 detection
Preferred temperature controls direction and the output of light beam source 26, thus preferably adjusts wafer temperature
Degree concordance.In one embodiment, hygrosensor is infrared (Infra-red, IR) temperature
Degree monitoring chip, has radio frequency (RF) function, is positioned at the surface of ESC-TE, by penetrating
Frequently equipment is connected to light beam source controller, carries out information mutual.In one embodiment, temperature
Detector is distributed on electrostatic chuck with predetermined pattern.In one embodiment, hygrosensor
Be positioned at inside electrostatic chuck, at profile height 1/2 about.
In above-described embodiment, light source controller obtains temperature according to hygrosensor and controls light beam
The direction in source and output, can realize wafer temperature control more preferably, more accurately.
Fig. 4 illustrates the flow process of an embodiment of the wafer temperature control method according to the present invention
Figure.
As shown in Figure 4, step 402, determine the beam direction of light beam source in electrostatic chuck and defeated
Go out power.Electrostatic chuck includes that insulating barrier, insulating barrier have the first surface supporting wafer, light
Electron gun can be installed on above the first surface of insulating barrier.Light beam source can be ordinary light source or
LASER Light Source, the light beam sent can be general visible, infrared ray or ultraviolet.
In one embodiment, it is preferred that short wavelength laser.
Step 404, beam direction and output power light beam source according to light beam source are to adjust
The temperature of wafer.The beam direction of light beam source and output such as go out with the form of parameter list
Existing, it is stipulated that the motion track of light beam, the output moved along on each aspect of track, or
The information such as person's time of staying on each aspect.
In above-described embodiment, by controlling direction and the output of the light beam that light beam source sends,
The temperature being attracted to the wafer above ESC can be adjusted such that it is able to preferably adjust temperature
The discordance of degree, can be greatly improved wafer temperature concordance, particularly improve non-radial temperature
Degree discordance.
Fig. 5 illustrates the stream of another embodiment of the wafer temperature control method according to the present invention
Cheng Tu.
As it is shown in figure 5, step 502, the difference of the wafer that detection is adsorbed on electrostatic chuck (is closed
Key) temperature of position.Temperature according to wafer diverse location can obtain the temperature of whole wafer
Scattergram.
Step 504, according to the temperature computation temperature-compensating figure of the diverse location of wafer, is i.e. used for
Compensate the temperature chart of wafer temperature discordance.
Step 506, determines the output of fluid cooling system according to temperature-compensating figure.
Step 508, determines light beam source according to the output of temperature-compensating figure and cooling system
Direction and output.
Step 510, the direction of the light beam that light beam source is sent and output be controlled so that
The temperature of the wafer that control is adsorbed on electrostatic chuck reaches predetermined Temperature Distribution.
Fig. 6 illustrates the stream of another embodiment of the wafer temperature control method according to the present invention
Cheng Tu.
As shown in Figure 6, step 602, collect physics Parameter Map.Choose a care (or weight
Want) figure carry out holocrystalline circle all Die (unit wafer) CD measure, according to CD measure
Survey result and obtained the CD scattergram of holocrystalline circle by software mapping.CD measurement equipment can be
Measurement platform, such as CDSEM or OCD.
Step 604, calculates temperature-compensating figure according to physical parameter figure.Prepare the work of cooling system
Make curve, set up ESC temperature and the relation of CD in (such as etching) committed step；Base
In physical parameter figure, calculate and arrange the deviation of value, calculated by working curve and need to adjust
Whole temperature value, it is thus achieved that temperature-compensating figure.
Step 606, determines the output of cooling system and light beam source according to temperature-compensating figure.
Step 608, the output of control cooling system and the direction of light beam source and output work
Rate.
Fig. 7 illustrates the operating diagram that the wafer temperature in Fig. 6 embodiment controls.Such as, exist
In dry etching, along with lasting plasma (Plasma) 28 bombardment, brilliant in chamber 200
The temperature of circle 25 can constantly raise.ESC 21, while clamping wafer 25, passes through temperature
The temperature of each position of detector monitors wafer, by the cooling of fluid cooling system internal flow
Agent fluid discharges and controls the temperature of wafer 25, the light beam sent by light beam source 26
27 provide extra heat source.Fluid cooling system, light source is controlled by working curve
Controller 30 determines temperature-compensating Figure 71 according to working curve 72 and temperature parameter figure, controls
The scanning track of light beam source 26 and output.Practical operation can suitably overall reduce
The temperature of ESC, is controlled the temperature of wafer to setting value by light beam source and cooling system.
So far, electrostatic chuck according to the present invention and wafer temperature controlling party are described in detail
Method.In order to avoid covering the design of the present invention, details more known in the field are not described.
Those skilled in the art are as described above, complete it can be appreciated how implement skill disclosed herein
Art scheme.
Although some specific embodiments of the present invention being described in detail by example,
But it should be appreciated by those skilled in the art, above example is not merely to illustrate, and not
It is to limit the scope of the present invention.It should be appreciated by those skilled in the art, can without departing from
In the case of scope and spirit of the present invention, above example is modified.The model of the present invention
Enclose and be defined by the following claims.
Claims (8)
1. the electrostatic chuck (ESC) being used for attracting wafer, it is characterised in that including:
Insulating barrier, described insulating barrier has the first surface supporting wafer；With
It is installed on the light beam source above the first surface of described insulating barrier, the light beam of described light beam source
Direction and output adjustable；
Wherein, direction and the output of described light beam source shows as being made up of the position of multiple points
Motion track and corresponding to the output of each point；
Described electrostatic chuck also includes:
Multiple hygrosensors, for separately detecting the wafer that is adsorbed on described electrostatic chuck
The temperature of diverse location；
It is positioned at the fluid cooling system below the first surface of described insulating barrier；
Light source controller, is connected with the plurality of hygrosensor and described light beam source, for root
Temperature-compensating figure is determined according to the temperature of the diverse location of described wafer；According to described temperature-compensating figure
Determine the output of fluid cooling system；According to described temperature-compensating figure and fluid cooling system
Output determine beam direction and the output of light beam source in electrostatic chuck.
Electrostatic chuck the most according to claim 1, it is characterised in that described light beam source is
Lasing light emitter or ordinary light source.
Electrostatic chuck the most according to claim 1, it is characterised in that described light beam source is sent out
Going out light beam is general visible, infrared light or ultraviolet.
Electrostatic chuck the most according to claim 1, it is characterised in that described light beam source bag
Include light source and light beam refraction/reflection system.
5. the reaction unit being used for processing wafer, it is characterised in that including:
Chamber,
In described chamber for support wafer as described in any one in Claims 1-4
Electrostatic chuck, described light beam source is installed on the first surface of insulating barrier described in described chamber
Top.
6. a wafer temperature control method, it is characterised in that including:
Determine beam direction and the output of light beam source in electrostatic chuck, described electrostatic chuck bag
Including insulating barrier, described insulating barrier has the first surface supporting wafer, and described light beam source is installed on
Above the first surface of described insulating barrier；
Described in beam direction according to described light beam source and output power, light beam source is to adjust institute
State the temperature of wafer；
Wherein, direction and the output of described light beam source shows as being made up of the position of multiple points
Motion track and corresponding to the output of each point；
Described method also includes:
The temperature of the diverse location of the wafer that detection is adsorbed on described electrostatic chuck；
The temperature of the diverse location according to described wafer determines temperature-compensating figure；
The fluid below the first surface being positioned at described insulating barrier is determined according to described temperature-compensating figure
The output of cooling system；
The described beam direction determining light beam source in electrostatic chuck and output include:
Output according to described temperature-compensating figure and fluid cooling system determines in electrostatic chuck
The beam direction of light beam source and output.
Method the most according to claim 6, it is characterised in that described detection is adsorbed in institute
The temperature of the diverse location stating the wafer on electrostatic chuck includes:
Temperature on the predetermined pattern position of the wafer that detection is adsorbed on described electrostatic chuck.
Method the most according to claim 6, it is characterised in that described light beam source sends
Light beam is general visible, infrared light or ultraviolet.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110434746.XA CN103177997B (en) | 2011-12-22 | 2011-12-22 | For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110434746.XA CN103177997B (en) | 2011-12-22 | 2011-12-22 | For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method |
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| CN103177997B true CN103177997B (en) | 2016-08-31 |
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| CN109727903A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Absorbent module, bonding pad disassembling apparatus and method and semiconductor packaging system |
| CN108400099B (en) * | 2018-01-23 | 2020-01-14 | 电子科技大学 | Device and method for measuring longitudinal temperature field of film in nitride epitaxial growth process |
| CN108766906A (en) * | 2018-05-04 | 2018-11-06 | 上海华力集成电路制造有限公司 | Reduce the device of the edge heat losses of wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100834240B1 (en) * | 2006-12-28 | 2008-05-30 | 동부일렉트로닉스 주식회사 | Heating system for semiconductor device fabricating equipment |
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| JPH0945756A (en) * | 1995-07-26 | 1997-02-14 | Hitachi Ltd | Semiconductor manufacturing device and manufacturing method |
| US6970644B2 (en) * | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
| JP2006013211A (en) * | 2004-06-28 | 2006-01-12 | Canon Inc | Temperature control unit and exposure device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100834240B1 (en) * | 2006-12-28 | 2008-05-30 | 동부일렉트로닉스 주식회사 | Heating system for semiconductor device fabricating equipment |
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