CN103177997A - Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method - Google Patents
Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method Download PDFInfo
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- CN103177997A CN103177997A CN201110434746XA CN201110434746A CN103177997A CN 103177997 A CN103177997 A CN 103177997A CN 201110434746X A CN201110434746X A CN 201110434746XA CN 201110434746 A CN201110434746 A CN 201110434746A CN 103177997 A CN103177997 A CN 103177997A
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Abstract
The invention discloses a reaction device for processing wafers, an ESC and a wafer temperature control method and relates to the technical field of the semiconductor technology. The ESC comprises an insulating layer for supporting a wafer and a light beam source which can be mounted on a first surface of the insulating layer. Directions and output powers of light beams of the light beam source are adjustable. The light beam source is matched with a fluid cooling system, the temperature of the wafer absorbed on the ESC can be adjusted by controlling the direction and the output power of the light beam, and accordingly, the temperature inconsistency can be well adjusted, the wafer temperature consistency can be improved greatly, and the non-radial temperature inconsistency can be improved particularly.
Description
Technical field
The present invention relates to the semiconductor process techniques field, particularly a kind of reaction unit for the treatment of wafer, electrostatic chuck (ElectroStatic Chuck, ESC) and wafer temperature control method.
Background technology
Wafer (Wafer) (for example, Silicon Wafer) is the base semiconductor material of making chip, is also most important material in semiconductor industry.The quality of the wafer that the final mass of the chip of making on wafer adopts when beginning to make has direct relation.If defectiveness on original wafer also is certain to exist defective on so final chip.For the wafer that can be used for making semiconductor device, need to satisfy strict material and physics requirement.
Cost is the key factor in semiconductor industry.Based on cost consideration, the physical size of the device that on the one hand reduces to make on wafer in modern semiconductor technology enlarges the size of wafer on the other hand.Above-mentioned both direction can be with the similar more chip of cost production.Along with wafer size also from 5 inches (Inch), 8 inches, develop into present 12 inches, 18 inches, larger size even of future generation, various new problems also constantly occur.
Consistency control (Uniformity Control) is a major issue in the wafer related process.Along with wafer size becomes large, consistency is controlled and is become more crucial, and will become the main challenge of technological development.
ESC cooling system (Coolant system) is the important means of controlling for the wafer temperature consistency.Existing ESC cooling system is ring-type (Ring type) multi-band (Multi-Zone) design.This design can arrange for different salbands different temperature, to adjust temperature consistency in wafer.This design can be adjusted radially (radial) temperature inconsistency preferably.But, distributing for non-temperature inconsistency radially, existing ESC design can not be carried out the consistency adjustment well.Fig. 1 shows existing ESC design for the adjustment result of temperature inconsistency.As shown in Figure 1, this ESC design can be adjusted the radial temperature profile inconsistency, but can not adjust well for non-radial component, and temperature range (Range) even becomes larger.In addition, the temperature control precision of existing cooling system is inadequate.
Summary of the invention
In view of above problem proposes the present invention.
An object of the present invention is to provide a kind of technical scheme of the electrostatic chuck for attracting wafer.
According to a first aspect of the invention, provide a kind of electrostatic chuck, having comprised: insulating barrier, this insulating barrier has the first surface of supporting wafer; With the light beam source (Light Beam Source) above the first surface that can be installed on this insulating barrier.
Preferably, light beam source direction and the power output capable of regulating of light beam.
Preferably, this electrostatic chuck also comprises: light source controller, be connected with this light beam source, and be used for direction and the power output of the light beam of this light beam source of control.
Preferably, this electrostatic chuck also comprises: a plurality of hygrosensors are used for the temperature that detection respectively is adsorbed in the diverse location of the wafer on this electrostatic chuck; This light source controller is connected with these a plurality of hygrosensors, and the temperature that is used for hygrosensors detections a plurality of according to this is controlled direction and the power output of the light beam of this light beam source.
Preferably, this light beam source is lasing light emitter or ordinary light source.
Preferably, state light beam source and can send short wavelength, high-octane light beam.
Preferably, light beam source comprises light source and the refraction of optical beam/reflecting system.
Preferably, this electrostatic chuck also comprises: the fluid cooling system that is positioned at the first surface below of this insulating barrier.
According to a second aspect of the invention, provide a kind of reaction unit for the treatment of wafer, comprising: chamber, for the electrostatic chuck as above of supporting wafer, light beam source is installed on the top of the first surface of insulating barrier in chamber in this chamber.
According to a third aspect of the invention we, a kind of wafer temperature control method is provided, comprises: determine beam direction and the power output of light beam source in electrostatic chuck, electrostatic chuck comprises insulating barrier, insulating barrier has the first surface of supporting wafer, and light beam source can be installed on the first surface top of insulating barrier; According to the beam direction of light beam source and output power light beam source to adjust the temperature of wafer.
Preferably, the method also comprises: the temperature of surveying the diverse location that is adsorbed in the wafer on described electrostatic chuck; Determine temperature-compensating figure according to the temperature of the diverse location of wafer; Beam direction and the power output of determining light beam source in electrostatic chuck comprise: beam direction and the power output of determining light beam source in electrostatic chuck according to temperature-compensating figure.
Preferably, the described detection temperature that is adsorbed in the diverse location of the wafer on electrostatic chuck comprises: survey the locational temperature of predetermined pattern that is adsorbed in the wafer on electrostatic chuck.
Preferably, light beam source can send short wavelength, high-octane light beam.
Preferably, the method also comprises: control the temperature of described wafer in conjunction with light beam source by the fluid cooling system below the first surface that is positioned at insulating barrier.
An advantage of the present invention is, can control more subtly the temperature of wafer by the light beam source on the control electrostatic chuck.
Another advantage of the present invention is, can improve the non-radially inconsistency of wafer temperature by the light beam source on the control electrostatic chuck.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present invention, it is clear that further feature of the present invention and advantage thereof will become.
Description of drawings
The accompanying drawing that consists of the part of specification has been described embodiments of the invention, and is used for explaining principle of the present invention together with the description.
With reference to accompanying drawing, according to following detailed description, can more be expressly understood the present invention, wherein:
Fig. 1 illustrates in prior art the wafer temperature compensation diagram based on ring-type multi-band cooling system.
Fig. 2 illustrates the structure chart according to an embodiment of the reaction unit for the treatment of wafer of the present invention.
Fig. 3 illustrates basis for the treatment of the structure chart of another embodiment of the reaction unit of wafer.
Fig. 4 illustrates the flow chart according to an embodiment of wafer temperature control method of the present invention.
Fig. 5 illustrates the flow chart according to another embodiment of wafer temperature control method of the present invention.
Fig. 6 illustrates the flow chart according to another embodiment of wafer temperature control method of the present invention.
Fig. 7 illustrates the schematic diagram of the application examples of controlling according to wafer temperature of the present invention.
Embodiment
Describe various exemplary embodiment of the present invention in detail now with reference to accompanying drawing.It should be noted that: unless illustrate in addition, the parts of setting forth in these embodiments and positioned opposite, numeral expression formula and the numerical value of step do not limit the scope of the invention.
Simultaneously, should be understood that for convenience of description, the size of the various piece shown in accompanying drawing is not to draw according to the proportionate relationship of reality.
Below be illustrative to the description only actually of at least one exemplary embodiment, never as any restriction to the present invention and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in suitable situation, technology, method and apparatus should be regarded as authorizing the part of specification.
In all examples with discussing shown here, it is exemplary that any occurrence should be construed as merely, rather than as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, in case be defined in an a certain Xiang Zaiyi accompanying drawing, do not need it is further discussed in accompanying drawing subsequently.
The basic conception of the embodiment of the present invention is that light beam source is provided in reative cell, controls the temperature of wafer by light beam source and fluid cooling system (Fluid coolant system).
Fig. 2 illustrates the structure chart according to an embodiment of the reaction unit for the treatment of wafer of the present invention.As shown in Figure 2, in this embodiment, reaction unit comprises chamber 200, is used for the electrostatic chuck 21 of supporting wafer 25 in chamber 200.Electrostatic chuck 21 has battery lead plate or the conductive gate 23 that applies to inside from the direct voltage of ESC power supply, utilizes the Coulomb force or the Johnsen-Rahbek power that are produced by this direct voltage that applies to adsorb and keep wafer 25.Electrostatic chuck 21 comprises the insulating barrier for supporting wafer, and this insulating barrier has the first surface 22 of supporting wafer 25.Light beam source 26 is installed above first surface 22, and direction and the power output of the light beam 27 that light beam source 26 sends are adjustable.Light beam source 26 is ordinary light source or LASER Light Source, and the light beam that sends can be general visible, infrared ray or ultraviolet.In one embodiment, adopt the high short-wavelength light of energy comparison, for example, short wavelength laser.Wavelength distribution is concentrated, and directionality is good, is convenient to the accurate control of beam direction, position.Can control by the refraction/reflection system direction of the light beam that light source sends.Plasma in label 28 expression chambers.By controlling direction and the power output of the light beam that light beam source sends, can adjust the temperature that is attracted to the wafer above ESC, thereby can adjust better the inconsistency of temperature, can greatly improve the wafer temperature consistency, particularly improve non-radial temperature inconsistency.
In one embodiment, electrostatic chuck 21 also has fluid cooling system.Fluid cooling system is positioned at the below of first surface 22, comprise the ring-type multi-band cryogen chamber 24 of for example extending in a circumferential direction, the cold-producing medium of supplying with set point of temperature through cold-producing medium with pipe arrangement circulation to this cryogen chamber 24 from ESC cooler (not shown) (for example, cooling water, liquid helium (He) etc.), utilize the temperature of this cold-producing medium to control the treatment temperature that is adsorbed the wafer 25 that remains on above ESC.Light beam source and fluid cooling system coordinate, and can adjust better the temperature of wafer, greatly improve the wafer temperature consistency, improve non-radial temperature inconsistency.Except coordinating with traditional fluid cooling system, light beam source also can coordinate with other cooling system.
In one embodiment, the direction of light beam source and power output show as motion track that the position by a plurality of points consists of and corresponding to the power output of each point.Each point can shine regular time; Perhaps different points corresponding to different irradiation times, is determined the power output of this point according to irradiation time and the average irradiation power of this point.For example, can carry out line by line to crystal column surface (or by column) scanning, also can scan successively according to concentric circles crystal column surface, also can be to each some scanning successively, for example, according to the importance of each point or need the intensity of temperature-compensating to scan successively.
Fig. 3 illustrates the present invention for the treatment of the structure chart of another embodiment of the reaction unit of wafer.As shown in Figure 3, ESC 21 also comprises the light source controller 30 that is connected with light beam source 26.Light source controller 30 can be controlled direction and the power output of the light beam 27 that light beam source 26 sends.ESC 21 also comprises a plurality of hygrosensors 31 that are positioned at wherein, and a plurality of hygrosensors 31 are surveyed the temperature of the diverse location that is adsorbed in the wafer on electrostatic chuck.Light source controller 30 is connected with hygrosensor 31, controls direction and the power output of light beam source 26 according to the temperature of hygrosensor 31 detections and the preferred temperature of input, thereby adjusts better the wafer temperature consistency.In one embodiment, hygrosensor is infrared (Infra-red, IR) temperature monitoring chip, has radio frequency (RF) function, is positioned at the surface of ESC-TE, is connected to the light beam source controller by radio-frequency apparatus, carries out information interaction.In one embodiment, hygrosensor is distributed on electrostatic chuck with predetermined pattern.In one embodiment, hygrosensor is positioned at electrostatic chuck inside, profile height 1/2 left and right, place.
In above-described embodiment, light source controller obtains according to hygrosensor direction and the power output that temperature is controlled light beam source, can realize better, more accurately wafer temperature control.
Fig. 4 illustrates the flow chart according to an embodiment of wafer temperature control method of the present invention.
As shown in Figure 4, step 402 is determined beam direction and the power output of light beam source in electrostatic chuck.Electrostatic chuck comprises insulating barrier, and insulating barrier has the first surface of supporting wafer, and light beam source can be installed on the first surface top of insulating barrier.Light beam source can be ordinary light source or LASER Light Source, and the light beam that sends can be general visible, infrared ray or ultraviolet.In one embodiment, preferred short wavelength laser.
Step 404, according to the beam direction of light beam source and output power light beam source to adjust the temperature of wafer.The beam direction of light beam source and power output for example occur with the form of parameter list, the motion track of regulation light beam, the power output on each aspect of motion track, the perhaps information such as the time of staying on each aspect.
In above-described embodiment, by controlling direction and the power output of the light beam that light beam source sends, can adjust the temperature that is attracted to the wafer above ESC, thereby can adjust better the inconsistency of temperature, can greatly improve the wafer temperature consistency, particularly improve non-radial temperature inconsistency.
Fig. 5 illustrates the flow chart according to another embodiment of wafer temperature control method of the present invention.
As shown in Figure 5, step 502 is surveyed the temperature of difference (key) position be adsorbed in the wafer on electrostatic chuck.Can obtain the temperature profile of whole wafer according to the temperature of wafer diverse location.
Fig. 6 illustrates the flow chart according to another embodiment of wafer temperature control method of the present invention.
As shown in Figure 6, step 602 is collected the physics Parameter Map.Choose the CD measurement that a care (or important) figure carries out holocrystalline all Die of circle (unit wafer), mapping by software according to the CD measurement obtains the CD distribution map of holocrystalline circle.The CD measurement equipment can be measurement platform, for example CDSEM or OCD.
Fig. 7 illustrates the work schematic diagram that the wafer temperature in Fig. 6 embodiment is controlled.For example, in dry etching, along with plasma (Plasma) 28 bombardments that continue, the temperature of the interior wafer 25 of chamber 200 can constantly raise.ESC 21 is when clamping wafer 25, monitor the temperature of each position of wafer by hygrosensor, discharge and control the temperature of wafer 25 by the coolant fluid of fluid cooling system internal flow, the light beam 27 that sends by light beam source 26 provides extra heating source.Control fluid cooling system by working curve, light source controller 30 is determined temperature-compensating Figure 71 according to working curve 72 and temperature parameter figure, controls track while scan and the power output of light beam source 26.Can be suitably in the practical operation whole temperature that reduces ESC controls to set point by light beam source and cooling system with the temperature of wafer.
So far, described in detail according to electrostatic chuck of the present invention and wafer temperature control method.For fear of covering design of the present invention, details more known in the field are not described.Those skilled in the art can understand how to implement technical scheme disclosed herein fully according to top description.
Although by example, specific embodiments more of the present invention are had been described in detail, it should be appreciated by those skilled in the art, above example is only in order to describe, rather than in order to limit the scope of the invention.It should be appreciated by those skilled in the art, can in the situation that do not depart from the scope of the present invention and spirit, above embodiment be modified.Scope of the present invention is limited by claims.
Claims (14)
1. an electrostatic chuck (ESC) that is used for attracting wafer, is characterized in that, comprising:
Insulating barrier, described insulating barrier has the first surface of supporting wafer; With
Can be installed on the light beam source of the first surface top of described insulating barrier.
2. electrostatic chuck according to claim 1, is characterized in that, described light beam source direction and the power output capable of regulating of light beam.
3. electrostatic chuck according to claim 1, is characterized in that, also comprises: light source controller is connected with described light beam source, for direction and the power output of the light beam of controlling described light beam source.
4. electrostatic chuck according to claim 3, is characterized in that, also comprises: a plurality of hygrosensors are used for the temperature that detection respectively is adsorbed in the diverse location of the wafer on described electrostatic chuck;
Described light source controller is connected with described a plurality of hygrosensors, is used for controlling according to the temperature that described a plurality of hygrosensors are surveyed direction and the power output of the light beam of described light beam source.
5. electrostatic chuck according to claim 1, is characterized in that, described light beam source is lasing light emitter or ordinary light source.
6. electrostatic chuck according to claim 1, is characterized in that, it is general visible, infrared light or ultraviolet that described light beam source sends light beam.
7. electrostatic chuck according to claim 1, is characterized in that, described light beam source comprises light source and the refraction of optical beam/reflecting system.
8. electrostatic chuck according to claim 1, is characterized in that, also comprises:
Be positioned at the fluid cooling system of the first surface below of described insulating barrier.
9. the reaction unit for the treatment of wafer, is characterized in that, comprising:
Chamber,
Be used for the electrostatic chuck as described in claim 1 to 8 any one of supporting wafer in described chamber, described light beam source is installed on the top of the first surface of insulating barrier described in described chamber.
10. a wafer temperature control method, is characterized in that, comprising:
Determine beam direction and the power output of light beam source in electrostatic chuck, described electrostatic chuck comprises insulating barrier, and described insulating barrier has the first surface of supporting wafer, and described light beam source can be installed on the first surface top of described insulating barrier;
According to the beam direction of described light beam source and the described light beam source of output power to adjust the temperature of described wafer.
11. method according to claim 10 is characterized in that, also comprises:
Detection is adsorbed in the temperature of the diverse location of the wafer on described electrostatic chuck;
Determine temperature-compensating figure according to the temperature of the diverse location of described wafer;
In described definite electrostatic chuck, beam direction and the power output of light beam source comprise:
Determine beam direction and the power output of light beam source described in electrostatic chuck according to described temperature-compensating figure.
12. method according to claim 11 is characterized in that, the temperature that described detection is adsorbed in the diverse location of the wafer on described electrostatic chuck comprises:
Detection is adsorbed in the locational temperature of predetermined pattern of the wafer on described electrostatic chuck.
13. method according to claim 10 is characterized in that, the light beam that described light beam source sends is general visible, infrared light or ultraviolet.
14. method according to claim 10 is characterized in that, also comprises:
Control the temperature of described wafer in conjunction with described light beam source by the fluid cooling system below the first surface that is positioned at described insulating barrier.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110434746.XA CN103177997B (en) | 2011-12-22 | 2011-12-22 | For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110434746.XA CN103177997B (en) | 2011-12-22 | 2011-12-22 | For processing the reaction unit of wafer, electrostatic chuck and wafer temperature control method |
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| CN103177997A true CN103177997A (en) | 2013-06-26 |
| CN103177997B CN103177997B (en) | 2016-08-31 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400099A (en) * | 2018-01-23 | 2018-08-14 | 电子科技大学 | The measuring device and method of film longitudinal temperature field during a kind of nitride epitaxial growth |
| CN108766906A (en) * | 2018-05-04 | 2018-11-06 | 上海华力集成电路制造有限公司 | Reduce the device of the edge heat losses of wafer |
| CN109727903A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Absorbent module, bonding pad disassembling apparatus and method and semiconductor packaging system |
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| US20040018008A1 (en) * | 2000-12-21 | 2004-01-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
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| JPH0945756A (en) * | 1995-07-26 | 1997-02-14 | Hitachi Ltd | Semiconductor manufacturing device and manufacturing method |
| US20040018008A1 (en) * | 2000-12-21 | 2004-01-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109727903A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Absorbent module, bonding pad disassembling apparatus and method and semiconductor packaging system |
| CN108400099A (en) * | 2018-01-23 | 2018-08-14 | 电子科技大学 | The measuring device and method of film longitudinal temperature field during a kind of nitride epitaxial growth |
| WO2019144974A1 (en) * | 2018-01-23 | 2019-08-01 | 电子科技大学 | Device and method for measuring longitudinal temperature field of thin film in epitaxial growth process of nitride |
| CN108400099B (en) * | 2018-01-23 | 2020-01-14 | 电子科技大学 | Device and method for measuring longitudinal temperature field of film in nitride epitaxial growth process |
| CN108766906A (en) * | 2018-05-04 | 2018-11-06 | 上海华力集成电路制造有限公司 | Reduce the device of the edge heat losses of wafer |
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| CN103177997B (en) | 2016-08-31 |
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