CN103168363A - 半导体结构及制造方法 - Google Patents
半导体结构及制造方法 Download PDFInfo
- Publication number
- CN103168363A CN103168363A CN2011800504277A CN201180050427A CN103168363A CN 103168363 A CN103168363 A CN 103168363A CN 2011800504277 A CN2011800504277 A CN 2011800504277A CN 201180050427 A CN201180050427 A CN 201180050427A CN 103168363 A CN103168363 A CN 103168363A
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- Prior art keywords
- silicon
- fin
- island
- mandrel
- sidewall
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000004065 semiconductor Substances 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 239000012212 insulator Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 25
- 238000010276 construction Methods 0.000 claims description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000004224 protection Effects 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims 1
- 238000013461 design Methods 0.000 description 39
- 230000008520 organization Effects 0.000 description 25
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- 238000012938 design process Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/909,325 | 2010-10-21 | ||
US12/909,325 US8211759B2 (en) | 2010-10-21 | 2010-10-21 | Semiconductor structure and methods of manufacture |
PCT/US2011/050502 WO2012054144A2 (en) | 2010-10-21 | 2011-09-06 | Semiconductor structure and methods of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103168363A true CN103168363A (zh) | 2013-06-19 |
CN103168363B CN103168363B (zh) | 2016-11-09 |
Family
ID=44654484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180050427.7A Expired - Fee Related CN103168363B (zh) | 2010-10-21 | 2011-09-06 | 半导体结构及制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8211759B2 (zh) |
CN (1) | CN103168363B (zh) |
DE (1) | DE112011103549B4 (zh) |
GB (1) | GB2498675B (zh) |
WO (1) | WO2012054144A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105493253A (zh) * | 2013-09-25 | 2016-04-13 | 英特尔公司 | 用于finfet架构的用固态扩散源掺杂的隔离阱 |
CN106298919A (zh) * | 2015-05-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、鳍式场效应晶体管及其形成方法 |
CN107039347A (zh) * | 2015-10-09 | 2017-08-11 | 格罗方德半导体公司 | 使用虚设栅极形成具有应力的外延层 |
CN107180761A (zh) * | 2016-03-09 | 2017-09-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8813014B2 (en) | 2009-12-30 | 2014-08-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for making the same using semiconductor fin density design rules |
US8614134B2 (en) * | 2011-03-21 | 2013-12-24 | Globalfoundries Inc. | Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation |
US8664072B2 (en) * | 2012-05-30 | 2014-03-04 | Globalfoundries Inc. | Source and drain architecture in an active region of a P-channel transistor by tilted implantation |
US8829617B2 (en) | 2012-11-30 | 2014-09-09 | International Business Machines Corporation | Uniform finFET gate height |
US9093533B2 (en) | 2013-07-24 | 2015-07-28 | International Business Machines Corporation | FinFET structures having silicon germanium and silicon channels |
US9105707B2 (en) | 2013-07-24 | 2015-08-11 | International Business Machines Corporation | ZRAM heterochannel memory |
US9236477B2 (en) | 2014-02-17 | 2016-01-12 | Globalfoundries Inc. | Graphene transistor with a sublithographic channel width |
US10670641B2 (en) * | 2017-08-22 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor test device and manufacturing method thereof |
JPWO2020183937A1 (zh) * | 2019-03-14 | 2020-09-17 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040262690A1 (en) * | 2003-04-03 | 2004-12-30 | Stmicroelectronics S.A. | High-density MOS transistor |
US6921700B2 (en) * | 2003-07-31 | 2005-07-26 | Freescale Semiconductor, Inc. | Method of forming a transistor having multiple channels |
KR100763542B1 (ko) * | 2006-10-30 | 2007-10-05 | 삼성전자주식회사 | 다중 채널 모오스 트랜지스터를 포함하는 반도체 장치의제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265291B1 (en) | 1999-01-04 | 2001-07-24 | Advanced Micro Devices, Inc. | Circuit fabrication method which optimizes source/drain contact resistance |
US6995412B2 (en) * | 2002-04-12 | 2006-02-07 | International Business Machines Corporation | Integrated circuit with capacitors having a fin structure |
DE10303771B3 (de) | 2003-01-30 | 2004-09-30 | Infineon Technologies Ag | Stegfeldeffekttransistor (FinFet) und Verfahren zur Herstellung von Stegfeldeffekttransistoren |
EP1519420A2 (en) | 2003-09-25 | 2005-03-30 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Multiple gate semiconductor device and method for forming same |
KR100506460B1 (ko) | 2003-10-31 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체소자의 트랜지스터 및 그 형성방법 |
US6962843B2 (en) | 2003-11-05 | 2005-11-08 | International Business Machines Corporation | Method of fabricating a finfet |
US7176092B2 (en) * | 2004-04-16 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company | Gate electrode for a semiconductor fin device |
JP2006012898A (ja) * | 2004-06-22 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US6970372B1 (en) | 2004-06-29 | 2005-11-29 | International Business Machines Corporation | Dual gated finfet gain cell |
US7488650B2 (en) * | 2005-02-18 | 2009-02-10 | Infineon Technologies Ag | Method of forming trench-gate electrode for FinFET device |
JP2006269975A (ja) * | 2005-03-25 | 2006-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4718908B2 (ja) * | 2005-06-14 | 2011-07-06 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US8123968B2 (en) | 2005-08-25 | 2012-02-28 | Round Rock Research, Llc | Multiple deposition for integration of spacers in pitch multiplication process |
US7638381B2 (en) | 2005-10-07 | 2009-12-29 | International Business Machines Corporation | Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby |
US7510939B2 (en) | 2006-01-31 | 2009-03-31 | International Business Machines Corporation | Microelectronic structure by selective deposition |
US7797365B2 (en) * | 2006-06-27 | 2010-09-14 | International Business Machines Corporation | Design structure for a booth decoder |
US7692254B2 (en) * | 2007-07-16 | 2010-04-06 | International Business Machines Corporation | Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure |
US7833889B2 (en) * | 2008-03-14 | 2010-11-16 | Intel Corporation | Apparatus and methods for improving multi-gate device performance |
US7902000B2 (en) | 2008-06-04 | 2011-03-08 | International Business Machines Corporation | MugFET with stub source and drain regions |
US7872303B2 (en) * | 2008-08-14 | 2011-01-18 | International Business Machines Corporation | FinFET with longitudinal stress in a channel |
US7795907B1 (en) * | 2009-10-10 | 2010-09-14 | Wang Michael C | Apparatus of low power, area efficient FinFET circuits and method for implementing the same |
-
2010
- 2010-10-21 US US12/909,325 patent/US8211759B2/en active Active
-
2011
- 2011-09-06 GB GB1307733.4A patent/GB2498675B/en not_active Expired - Fee Related
- 2011-09-06 DE DE112011103549.7T patent/DE112011103549B4/de not_active Expired - Fee Related
- 2011-09-06 WO PCT/US2011/050502 patent/WO2012054144A2/en active Application Filing
- 2011-09-06 CN CN201180050427.7A patent/CN103168363B/zh not_active Expired - Fee Related
-
2012
- 2012-02-23 US US13/403,457 patent/US9231085B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040262690A1 (en) * | 2003-04-03 | 2004-12-30 | Stmicroelectronics S.A. | High-density MOS transistor |
US6921700B2 (en) * | 2003-07-31 | 2005-07-26 | Freescale Semiconductor, Inc. | Method of forming a transistor having multiple channels |
KR100763542B1 (ko) * | 2006-10-30 | 2007-10-05 | 삼성전자주식회사 | 다중 채널 모오스 트랜지스터를 포함하는 반도체 장치의제조 방법 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105493253A (zh) * | 2013-09-25 | 2016-04-13 | 英特尔公司 | 用于finfet架构的用固态扩散源掺杂的隔离阱 |
CN105493253B (zh) * | 2013-09-25 | 2019-11-29 | 英特尔公司 | 用于finfet架构的用固态扩散源掺杂的隔离阱 |
CN106298919A (zh) * | 2015-05-29 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、鳍式场效应晶体管及其形成方法 |
CN106298919B (zh) * | 2015-05-29 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、鳍式场效应晶体管及其形成方法 |
CN107039347A (zh) * | 2015-10-09 | 2017-08-11 | 格罗方德半导体公司 | 使用虚设栅极形成具有应力的外延层 |
CN107039347B (zh) * | 2015-10-09 | 2020-10-23 | 格罗方德半导体公司 | 使用虚设栅极形成具有应力的外延层 |
CN107180761A (zh) * | 2016-03-09 | 2017-09-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103168363B (zh) | 2016-11-09 |
WO2012054144A2 (en) | 2012-04-26 |
US9231085B2 (en) | 2016-01-05 |
DE112011103549T5 (de) | 2013-08-01 |
GB2498675A (en) | 2013-07-24 |
US20120146145A1 (en) | 2012-06-14 |
GB201307733D0 (en) | 2013-06-12 |
DE112011103549B4 (de) | 2016-10-20 |
GB2498675B (en) | 2014-03-26 |
US20120100674A1 (en) | 2012-04-26 |
US8211759B2 (en) | 2012-07-03 |
WO2012054144A3 (en) | 2012-08-16 |
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Effective date of registration: 20171108 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171108 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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