CN103153842B - 形成带帽纳米柱 - Google Patents

形成带帽纳米柱 Download PDF

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Publication number
CN103153842B
CN103153842B CN201080069728.XA CN201080069728A CN103153842B CN 103153842 B CN103153842 B CN 103153842B CN 201080069728 A CN201080069728 A CN 201080069728A CN 103153842 B CN103153842 B CN 103153842B
Authority
CN
China
Prior art keywords
nano
pore
pillar
oxidizable material
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080069728.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103153842A (zh
Inventor
P.马迪洛维奇
Q.魏
A.M.富勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of CN103153842A publication Critical patent/CN103153842A/zh
Application granted granted Critical
Publication of CN103153842B publication Critical patent/CN103153842B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/006—Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D63/00—Apparatus in general for separation processes using semi-permeable membranes
    • B01D63/08—Flat membrane modules
    • B01D63/088—Microfluidic devices comprising semi-permeable flat membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/006—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
    • B01D67/0065—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods by anodic oxidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/02—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2325/00—Details relating to properties of membranes
    • B01D2325/02—Details relating to pores or porosity of the membranes
    • B01D2325/028—Microfluidic pore structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502746—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means for controlling flow resistance, e.g. flow controllers, baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502753—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by bulk separation arrangements on lab-on-a-chip devices, e.g. for filtration or centrifugation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0361—Tips, pillars

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hybrid Cells (AREA)
  • Micromachines (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Inert Electrodes (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201080069728.XA 2010-10-21 2010-10-21 形成带帽纳米柱 Expired - Fee Related CN103153842B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/053533 WO2012054040A1 (en) 2010-10-21 2010-10-21 Formation of capped nano-pillars

Publications (2)

Publication Number Publication Date
CN103153842A CN103153842A (zh) 2013-06-12
CN103153842B true CN103153842B (zh) 2015-04-08

Family

ID=45975517

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201080069728.XA Expired - Fee Related CN103153842B (zh) 2010-10-21 2010-10-21 形成带帽纳米柱
CN201180050689.3A Active CN103153845B (zh) 2010-10-21 2011-10-13 纳米尺度结构

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180050689.3A Active CN103153845B (zh) 2010-10-21 2011-10-13 纳米尺度结构

Country Status (4)

Country Link
US (2) US20130292253A1 (de)
EP (2) EP2630076B1 (de)
CN (2) CN103153842B (de)
WO (4) WO2012054040A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484675B (zh) * 2012-12-20 2015-05-11 Nat Univ Tsing Hua 具有複合式奈米結構的壓電薄膜及具有其的觸控感測裝置
US10756306B2 (en) 2016-10-28 2020-08-25 3M Innovative Properties Company Nanostructured article

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1729137A (zh) * 2002-12-24 2006-02-01 索尼株式会社 产生微结构的方法和生产模具的方法
CN101432224A (zh) * 2006-04-19 2009-05-13 独立行政法人科学技术振兴机构 表面排列有微细金属块的基板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709929B2 (en) * 2001-06-25 2004-03-23 North Carolina State University Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
US7384792B1 (en) * 2003-05-27 2008-06-10 Opto Trace Technologies, Inc. Method of fabricating nano-structured surface and configuration of surface enhanced light scattering probe
KR100593438B1 (ko) * 2004-02-09 2006-06-28 학교법인 포항공과대학교 나노 형광체/나노소재 이종접합구조체 및 그 제조방법
US7463917B2 (en) * 2004-04-28 2008-12-09 Medtronic, Inc. Electrodes for sustained delivery of energy
KR100612894B1 (ko) * 2005-05-02 2006-08-14 삼성전자주식회사 나노와이어 소자 및 그 제조방법
FR2904146B1 (fr) * 2006-07-20 2008-10-17 Commissariat Energie Atomique Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique
US7794861B2 (en) * 2006-08-11 2010-09-14 Canon Kabushiki Kaisha Patterned media, method of manufacturing magnetic recording medium, and method of manufacturing a base
WO2008097360A2 (en) * 2006-09-14 2008-08-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Polymeric nanopillars and nanotubes, their manufacture and uses
US7850941B2 (en) * 2006-10-20 2010-12-14 General Electric Company Nanostructure arrays and methods for forming same
US7544591B2 (en) * 2007-01-18 2009-06-09 Hewlett-Packard Development Company, L.P. Method of creating isolated electrodes in a nanowire-based device
CN101275209A (zh) * 2007-03-30 2008-10-01 清华大学 热界面材料及其制备方法
JP2009037706A (ja) * 2007-08-02 2009-02-19 Canon Inc 構造体及びその製造方法
WO2010022107A2 (en) * 2008-08-18 2010-02-25 The Regents Of The University Of California Nanostructured superhydrophobic, superoleophobic and/or superomniphobic coatings, methods for fabrication, and applications thereof
WO2010039871A1 (en) * 2008-09-30 2010-04-08 University Of Virginia Patent Foundation Reconfigurable array of magnetic automata (rama) and related methods thereof
KR101031019B1 (ko) * 2009-03-10 2011-04-25 삼성전기주식회사 전이금속산화물 코팅층을 가지는 금속 전극의 제조 방법 및그에 의해 제조된 금속 전극
US8299341B2 (en) * 2009-05-13 2012-10-30 The California Institute Of Technology Fabrication of vertically aligned metallic nanopillars

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1729137A (zh) * 2002-12-24 2006-02-01 索尼株式会社 产生微结构的方法和生产模具的方法
CN101432224A (zh) * 2006-04-19 2009-05-13 独立行政法人科学技术振兴机构 表面排列有微细金属块的基板

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Growth of multioxide planar film with the nanoscale inner structure via anodizing Al/Ta layers on Si;A. Mozalev et al.;《Electrochimica Acta》;20080827;第54卷;第935-945页 *
Nucleation and growth of the nanostructured anodic oxides on tantalum and niobium under the porous alumina film;A. Mozalev et al.;《Electrochimica Acta》;20031231;第48卷;第3155-3170页 *

Also Published As

Publication number Publication date
WO2012054286A3 (en) 2012-12-13
EP2630078B1 (de) 2015-08-19
WO2012054120A1 (en) 2012-04-26
US20160319445A1 (en) 2016-11-03
CN103153845B (zh) 2014-10-08
EP2630078A2 (de) 2013-08-28
WO2012054281A3 (en) 2012-08-16
EP2630078A4 (de) 2014-06-25
CN103153845A (zh) 2013-06-12
WO2012054040A1 (en) 2012-04-26
WO2012054281A2 (en) 2012-04-26
CN103153842A (zh) 2013-06-12
WO2012054286A2 (en) 2012-04-26
EP2630076A4 (de) 2014-06-25
EP2630076B1 (de) 2015-08-26
EP2630076A1 (de) 2013-08-28
US20130292253A1 (en) 2013-11-07

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Granted publication date: 20150408

Termination date: 20181021

CF01 Termination of patent right due to non-payment of annual fee