CN103137520A - Semiconductor chip gas etching device - Google Patents
Semiconductor chip gas etching device Download PDFInfo
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- CN103137520A CN103137520A CN2011103896968A CN201110389696A CN103137520A CN 103137520 A CN103137520 A CN 103137520A CN 2011103896968 A CN2011103896968 A CN 2011103896968A CN 201110389696 A CN201110389696 A CN 201110389696A CN 103137520 A CN103137520 A CN 103137520A
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Abstract
The invention discloses a semiconductor chip gas etching device provided with a base and a gas etching cover. The gas etching cover can be covered on the base in a sealing mode to form a sealed space, the base is provided with a chip positioning seat, the gas etching cover is provided with air inlets, and the base is provided with air outlets, hydrogen fluoride (HF) gas is blown into the sealed space through the air inlets and contacts the surface of a semiconductor chip so as to remove an oxidation film on the surface of the semiconductor chip, the HF gas is extracted through the air outlets so as to keep smooth blowing of the gas into the sealed space and constant pressure, due to the fact that the surface, which contacts the chip positioning seat, of the semiconductor chip does not contact the HF gas at the time of gas etching, the oxidation film on the surface is not removed by means of etching, and the surface, which does not contact the chip positioning seat, of the semiconductor chip contacts the HF gas, so the oxidation film on the surface is removed by means of etching. Based on the principle, the semiconductor chip gas etching device not only can remove the oxidation film on the surface of the semiconductor chip by means of gas etching but also can meet requirements of common etching and side etching.
Description
Technical field
The invention belongs to the process equipment field of semiconductor wafer, be specifically related to a kind of device of removing the semiconductor wafer surface oxide-film for etching.
Background technology
Electronic industry development is in recent years advanced by leaps and bounds, and various multi-functional portable electronic products in people's life, make people live more and more convenient as intelligent mobile phone, notebook computer, flat computer etc. have all incorporated.In the behind of electronic industry development, the maturation development that is located thereon the semiconductor industry of trip has great contribution.Except the people's livelihood, Military Electronics industry, energy aspect such as solar energy industry and illumination aspect such as LED industry all have the relevance of quite large degree with semiconductor industry.In addition, semi-conductive technology also can be applicable to other fields such as living skill, and it is wide that it involves scope, and the foundation stone that is referred to as science and technology in modern age was not yet.
The wafer that manufacture of semiconductor is produced can be used in above-mentioned various application widely, the yield of wafer can say the quality that has directly determined end product, therefore, on the material of wafer and production method all circles all with the quantity research that has high input to guarantee its quality.No matter it is the wafer of which kind of application, must through after the multiple tracks procedure for processing, could obtain electronic building brick or the photoelectric subassembly of practical application.One of wafer process processing procedure is exactly the oxide-film that wafer surface is removed in etching, it is to soak crystal to remove surface film oxide with the solution that contains hydrofluoric acid that tradition is removed the more method of oxide-film employing, when the only surface of product processing request wafer or a surface and another marginal surface are removed oxide-film, process quite loaded down with trivial details with above-mentioned wet etching.Therefore be necessary to develop a kind of method or equipment that etching is removed the wafer surface oxide-film and guaranteed etching quality of being convenient to.
Summary of the invention
In order to address the above problem, the invention provides a kind of semiconductor wafer cavitation erosion device, this semiconductor wafer cavitation erosion device can etching be removed the oxide-film of wafer surface, and can complete normal etch and two kinds of etching requirements of broadside etching.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of semiconductor wafer cavitation erosion device, be provided with pedestal and cavitation erosion cover, described cavitation erosion cover is positioned at above described pedestal, described cavitation erosion cover can cover on described pedestal and consist of confined space, described pedestal is provided with the wafer orientation seat, offers air admission hole on described cavitation erosion cover, and described air admission hole communicates with described confined space, offer some ventholes on described pedestal, described venthole communicates with described confined space.Need to pass into the Surface Contact of HF gas and wafer in described confined space to remove the oxide-film of wafer surface, therefore described air admission hole need connect air supply plant, in order to be blown into HF gas for described confined space, simultaneously, described confined space internal pressure is constant and air blowing is smooth in order to keep, described venthole need to connect air extractor, the flow of HF air inlet and bottom pumping all can be finely tuned, to guarantee that the HF gas that enters in the cavitation erosion cover can not leak, and still can have again enough amounts and wafer surface to react to remove the oxide-film of wafer surface.During cavitation erosion, the wafer surface of touching with the wafer orientation seated connection is owing to not contacting HF gas, therefore do not participate in reaction, not etched removal oxide-film, and all do not contact with HF gas with the wafer surface that the wafer orientation seated connection touches, so all etched removal oxide-film, based on above-mentioned principle, this semiconductor wafer cavitation erosion device can be completed two kinds of etching requirements, is respectively normal etch and broadside etching.Normal etch refers to wafer diameter less than wafer orientation seat diameter, and namely the lower surface of wafer all touches with the wafer orientation seated connection, and this lower surface is not etched, the etched removal oxide-film of the upper surface of wafer.The broadside etching refers to wafer diameter greater than the diameter of described wafer orientation seat, the complete etched etched removal oxide-film of part that exceeds the wafer orientation seat to remove oxide-film and wafer lower surface of the upper surface of wafer.
The further technical scheme that invention is adopted is:
Preferably, described wafer orientation seat center offers the vacuum suction mouth, described vacuum suction mouth connection suction vacuum plant.Inhale vacuum plant and by the vacuum suction mouth, the wafer on the wafer orientation seat is held, vacuum degree need to guarantee that wafer can not be moved etched the time, also can the broken or suction distortion with chip sucking.
preferably, be provided with baffle, described baffle is made of superposed linkage section and the jet section one that is positioned at the bottom, the linkage section of described baffle is connected in the air admission hole lower end of described cavitation erosion cover, and the upper end of the linkage section of described baffle offers the gas inlet hole, the gas inlet hole of described baffle communicates with the air admission hole of described cavitation erosion cover, jet section of described baffle is positioned at described confined space and is positioned at above described wafer orientation seat, and the bottom surface of described jet section and side offer some fumaroles on one of at least, all fumaroles all communicate with described gas inlet hole.Oxide-film generation chemical reaction in order to ensure HF gas energy and wafer surface, and then remove the oxide-film of wafer surface, the HF gas that enters in the cavitation erosion cover must contact with wafer surface uniformly, therefore use baffle to concentrate on to cavitate the HF gas uniform shunting at cover center, can adopt the give vent to anger baffle of mode of multiple difference, dismountable structure is adopted in being connected between baffle and cavitation erosion cover air admission hole lower end, with the convenient baffle of changing the different modes of giving vent to anger according to different process requirements.
Also be provided with the lowering or hoisting gear for lifting cavitation erosion cover, described cavitation erosion cover is connected with described lowering or hoisting gear.This lowering or hoisting gear can press to the cavitation erosion cover and form confined space on pedestal to be used for etching, and can will carry to breaking away to take out wafer with pedestal on the cavitation erosion cover, this lowering or hoisting gear can be specifically cylinder, in cavitation erosion cover upper end fixedly cylinder connection arm for being connected with cylinder, the equal capable of regulating of pressure that cylinder connects the rising or falling speed of arm and presses down the cavitation erosion cover prevents the HF Leakage Gas to ensure enough pressure.
Preferably, the lower end of described cavitation erosion cover is embedded with viton seal ring.This viton seal ring consist of confined space so that cavitate between cover and pedestal, and its material is difficult for by the HF gas attack in order to the contact-making surface of sealing cavitation erosion cover with pedestal.
Preferably, the upper surface of described pedestal is concaved with positioning pit, and described wafer orientation seat lower end is embedded in described positioning pit.The structure that described wafer orientation seat is embedded in pedestal has realized the detachable of wafer orientation seat, can change the wafer orientation seat, adapt to 4 with the wafer orientation seat of different size " (4 inches), 5 ", 6 " or 8 " wafer of different size, the wafer orientation seat of these different sizes refers to that its top is used for the diameter difference at the position of placement wafer, but its underpart is embedded in the measure-alike of the interior part of pedestal.
Preferably, described cavitation erosion cover is polypropylene (PP) cavitation erosion cover, and described pedestal is ceramic wafer, also is provided be used to the support that supports described ceramic wafer, and described ceramic wafer is fixed in described support upper end, and described wafer orientation seat is ceramic positioning seat.
Also be provided with for the heater that promotes etch temperature.
Preferably, the lower surface of described pedestal is fixed with draft hood, and described draft hood covers the some described venthole on pedestal, and the center, lower end of described draft hood offers aspirating hole, and described heater is the heating resistance pad that is covered on the lower surface of described pedestal.Wherein, some described ventholes can be specifically around a wafer orientation seat circle aperture on every side, so that bleed evenly; The contact-making surface of draft hood and pedestal is provided with sealing ring, and the aspirating hole at center, described draft hood lower end connects air extractor; Described heating resistance pad can be specifically the silica gel heating pad, by heating resistance pad, pedestal is heated up, and transfers heat to the wafer orientation seat by pedestal, finally indirectly heat is passed to wafer.
Preferably, described heater also can be for inserting in the some heating rods in described wafer orientation seat, described some heating rods top inserts in described wafer orientation seat and its underpart passes described pedestal, some described ventholes are distributed in around described wafer orientation seat, be provided with annular gas hood, it is peripheral and cover some described ventholes that described annular gas hood is positioned at described heating rod, and described annular gas hood lower end offers at least one aspirating hole.Heating rod directly heats the wafer orientation seat that carries wafer, and the efficiency of heating surface is high; Some described ventholes can be specifically around a wafer orientation seat circle aperture on every side, so that bleed evenly; The contact-making surface of described annular gas hood and described pedestal is provided with sealing ring, and described annular gas hood lower end can be symmetrical arranged two aspirating holes, so that bleed evenly, aspirating hole connects air extractor.
the benefit that the present invention has: semiconductor wafer cavitation erosion device of the present invention is provided with pedestal and cavitation erosion cover, the cavitation erosion cover can seal to cover in and consist of confined space on pedestal, pedestal is provided with the wafer orientation seat, offer air admission hole on the cavitation erosion cover, offer venthole on pedestal, pass into HF gas by air admission hole in confined space and contact to remove the oxide-film of wafer surface with wafer surface, by venthole, gas is extracted out simultaneously, to keep blow in confined space smooth and constant pressure, during cavitation erosion, the wafer surface of touching with the wafer orientation seated connection is owing to not contacting HF gas, not etched removal oxide-film, and all do not contact with HF gas with the wafer surface that the wafer orientation seated connection touches, all etched removal oxide-film, based on above-mentioned principle, this semiconductor wafer cavitation erosion device not only can etching be removed the oxide-film of wafer surface, and can complete two kinds of etching requirements of normal etch and broadside etching.
Description of drawings
Fig. 1 is the described semiconductor wafer cavitation erosion of the embodiment of the present invention 1 apparatus structure schematic diagram;
Fig. 2 is the described semiconductor wafer cavitation erosion of the embodiment of the present invention 2 apparatus structure schematic diagram.
Embodiment
Embodiment 1: a kind of semiconductor wafer cavitation erosion device, be provided with pedestal 1 and cavitation erosion cover 2, described cavitation erosion cover is positioned at above described pedestal, described cavitation erosion cover can cover in and consist of confined space 3 on described pedestal, described pedestal is provided with wafer orientation seat 4, offers air admission hole 5 on described cavitation erosion cover, and described air admission hole communicates with described confined space, offer some ventholes 6 on described pedestal, described venthole communicates with described confined space.Need to pass into the Surface Contact of HF gas and wafer A in described confined space to remove the oxide-film of wafer surface, therefore described air admission hole need connect air supply plant, in order to be blown into HF gas for described confined space, simultaneously, described confined space internal pressure is constant and air blowing is smooth in order to keep, described venthole need to connect air extractor, the flow of HF air inlet and bottom pumping all can be finely tuned, to guarantee that the HF gas that enters in the cavitation erosion cover can not leak, and still can have again enough amounts and wafer surface to react to remove the oxide-film of wafer surface.During cavitation erosion, the wafer surface of touching with the wafer orientation seated connection is owing to not contacting HF gas, therefore do not participate in reaction, not etched removal oxide-film, and all do not contact with HF gas with the wafer surface that the wafer orientation seated connection touches, so all etched removal oxide-film, based on above-mentioned principle, this semiconductor wafer cavitation erosion device can be completed two kinds of etching requirements, is respectively normal etch and broadside etching.Normal etch refers to wafer A diameter less than wafer orientation seat 4 diameters, and namely the lower surface of wafer all touches with the wafer orientation seated connection, and this lower surface is not etched, the etched removal oxide-film of the upper surface of wafer.The broadside etching refers to wafer A diameter greater than the diameter of described wafer orientation seat 4, the complete etched etched removal oxide-film of part that exceeds the wafer orientation seat to remove oxide-film and wafer lower surface of the upper surface of wafer.
Described wafer orientation seat center offers vacuum suction mouth 7, and described vacuum suction mouth connects inhales vacuum plant.Inhale vacuum plant and by the vacuum suction mouth, the wafer on the wafer orientation seat is held, vacuum degree need to guarantee that wafer can not be moved etched the time, also can the broken or suction distortion with chip sucking.
be provided with baffle 8, described baffle is made of superposed linkage section and the jet section one that is positioned at the bottom, the linkage section of described baffle is connected in the air admission hole lower end of described cavitation erosion cover, and the upper end of the linkage section of described baffle offers the gas inlet hole, the gas inlet hole of described baffle communicates with the air admission hole of described cavitation erosion cover, jet section of described baffle is positioned at described confined space and is positioned at above described wafer orientation seat, and the bottom surface of described jet section and side offer some fumaroles on one of at least, all fumaroles all communicate with described gas inlet hole.Oxide-film generation chemical reaction in order to ensure HF gas energy and wafer surface, and then remove the oxide-film of wafer surface, the HF gas that enters in the cavitation erosion cover must contact with wafer surface uniformly, therefore use baffle to concentrate on to cavitate the HF gas uniform shunting at cover center, can adopt the give vent to anger baffle of mode of multiple difference, dismountable structure is adopted in being connected between baffle and cavitation erosion cover air admission hole lower end, with the convenient baffle of changing the different modes of giving vent to anger according to different process requirements.
Be provided with the lowering or hoisting gear for lifting cavitation erosion cover, described cavitation erosion cover is connected with described lowering or hoisting gear.This lowering or hoisting gear can press to the cavitation erosion cover and form confined space on pedestal to be used for etching, and can will carry to breaking away to take out wafer with pedestal on the cavitation erosion cover, this lowering or hoisting gear can be specifically cylinder, in cavitation erosion cover upper end fixedly cylinder connection arm 9 for being connected with cylinder, the equal capable of regulating of pressure that cylinder connects the rising or falling speed of arm and presses down the cavitation erosion cover prevents the HF Leakage Gas to ensure enough pressure.
The lower end of described cavitation erosion cover is embedded with viton seal ring 10.This viton seal ring consist of confined space so that cavitate between cover and pedestal, and its material is difficult for by the HF gas attack in order to the contact-making surface of sealing cavitation erosion cover with pedestal.
The upper surface of described pedestal is concaved with positioning pit, and described wafer orientation seat lower end is embedded in described positioning pit.The structure that described wafer orientation seat is embedded in pedestal has realized the detachable of wafer orientation seat, can change the wafer orientation seat, adapt to 4 with the wafer orientation seat of different size " (4 inches), 5 ", 6 " or 8 " wafer of different size, the wafer orientation seat of these different sizes refers to that its top is used for the diameter difference at the position of placement wafer, but its underpart is embedded in the measure-alike of the interior part of pedestal.
Described cavitation erosion cover is polypropylene (PP) cavitation erosion cover, and described pedestal is ceramic wafer, also is provided be used to the support 16 that supports described ceramic wafer, and described ceramic wafer is fixed in described support upper end, and described wafer orientation seat is ceramic positioning seat.
Be provided with for the heater that promotes etch temperature.
The lower surface of described pedestal is fixed with draft hood 11, and described draft hood covers the some described venthole on pedestal, and the center, lower end of described draft hood offers aspirating hole 12, and described heater is the heating resistance pad 13 that is covered on the lower surface of described pedestal.Wherein, some described ventholes can be specifically around a wafer orientation seat circle aperture on every side, so that bleed evenly; The contact-making surface of draft hood and pedestal is provided with sealing ring, and the aspirating hole at center, described draft hood lower end connects air extractor; Described heating resistance pad can be specifically the silica gel heating pad, by heating resistance pad, pedestal is heated up, and transfers heat to the wafer orientation seat by pedestal, finally indirectly heat is passed to wafer.
The course of work of the present embodiment semiconductor wafer cavitation erosion device is as follows: wafer is placed on the wafer orientation seat of semiconductor wafer cavitation erosion device, the vacuum suction mouth is air-breathing holds wafer, then the decline of cavitation erosion cover covers wafer, HF gas is blown into, and after the time of setting, HF gas stops blowing, etching is completed, the cavitation erosion cover rises, and the vacuum suction mouth stops suction, and takes out wafer.
Embodiment 2: a kind of semiconductor wafer cavitation erosion device, be provided with pedestal 1 and cavitation erosion cover 2, described cavitation erosion cover is positioned at above described pedestal, described cavitation erosion cover can cover in and consist of confined space 3 on described pedestal, described pedestal is provided with wafer orientation seat 4, offers air admission hole 5 on described cavitation erosion cover, and described air admission hole communicates with described confined space, offer some ventholes 6 on described pedestal, described venthole communicates with described confined space.Need to pass into the Surface Contact of HF gas and wafer A in described confined space to remove the oxide-film of wafer surface, therefore described air admission hole need connect air supply plant, in order to be blown into HF gas for described confined space, simultaneously, described confined space internal pressure is constant and air blowing is smooth in order to keep, described venthole need to connect air extractor, the flow of HF air inlet and bottom pumping all can be finely tuned, to guarantee that the HF gas that enters in the cavitation erosion cover can not leak, and still can have again enough amounts and wafer surface to react to remove the oxide-film of wafer surface.During cavitation erosion, the wafer surface of touching with the wafer orientation seated connection is owing to not contacting HF gas, therefore do not participate in reaction, not etched removal oxide-film, and all do not contact with HF gas with the wafer surface that the wafer orientation seated connection touches, so all etched removal oxide-film, based on above-mentioned principle, this semiconductor wafer cavitation erosion device can be completed two kinds of etching requirements, is respectively normal etch and broadside etching.Normal etch refers to wafer A diameter less than wafer orientation seat 4 diameters, and namely the lower surface of wafer all touches with the wafer orientation seated connection, and this lower surface is not etched, the etched removal oxide-film of the upper surface of wafer.The broadside etching refers to wafer A diameter greater than the diameter of described wafer orientation seat 4, the complete etched etched removal oxide-film of part that exceeds the wafer orientation seat to remove oxide-film and wafer lower surface of the upper surface of wafer.
Described wafer orientation seat center offers vacuum suction mouth 7, and described vacuum suction mouth connects inhales vacuum plant.Inhale vacuum plant and by the vacuum suction mouth, the wafer on the wafer orientation seat is held, vacuum degree need to guarantee that wafer can not be moved etched the time, also can the broken or suction distortion with chip sucking.
be provided with baffle 8, described baffle is made of superposed linkage section and the jet section one that is positioned at the bottom, the linkage section of described baffle is connected in the air admission hole lower end of described cavitation erosion cover, and the upper end of the linkage section of described baffle offers the gas inlet hole, the gas inlet hole of described baffle communicates with the air admission hole of described cavitation erosion cover, jet section of described baffle is positioned at described confined space and is positioned at above described wafer orientation seat, and the bottom surface of described jet section and side offer some fumaroles on one of at least, all fumaroles all communicate with described gas inlet hole.Oxide-film generation chemical reaction in order to ensure HF gas energy and wafer surface, and then remove the oxide-film of wafer surface, the HF gas that enters in the cavitation erosion cover must contact with wafer surface uniformly, therefore use baffle to concentrate on to cavitate the HF gas uniform shunting at cover center, can adopt the give vent to anger baffle of mode of multiple difference, dismountable structure is adopted in being connected between baffle and cavitation erosion cover air admission hole lower end, with the convenient baffle of changing the different modes of giving vent to anger according to different process requirements.
Be provided with the lowering or hoisting gear for lifting cavitation erosion cover, described cavitation erosion cover is connected with described lowering or hoisting gear.This lowering or hoisting gear can press to the cavitation erosion cover and form confined space on pedestal to be used for etching, and can will carry to breaking away to take out wafer with pedestal on the cavitation erosion cover, this lowering or hoisting gear can be specifically cylinder, in cavitation erosion cover upper end fixedly cylinder connection arm 9 for being connected with cylinder, the equal capable of regulating of pressure that cylinder connects the rising or falling speed of arm and presses down the cavitation erosion cover prevents the HF Leakage Gas to ensure enough pressure.
The lower end of described cavitation erosion cover is embedded with viton seal ring 10.This viton seal ring consist of confined space so that cavitate between cover and pedestal, and its material is difficult for by the HF gas attack in order to the contact-making surface of sealing cavitation erosion cover with pedestal.
The upper surface of described pedestal is concaved with positioning pit, and described wafer orientation seat lower end is embedded in described positioning pit.The structure that described wafer orientation seat is embedded in pedestal has realized the detachable of wafer orientation seat, can change the wafer orientation seat, adapt to 4 with the wafer orientation seat of different size " (4 inches), 5 ", 6 " or 8 " wafer of different size, the wafer orientation seat of these different sizes refers to that its top is used for the diameter difference at the position of placement wafer, but its underpart is embedded in the measure-alike of the interior part of pedestal.
Described cavitation erosion cover is polypropylene (PP) cavitation erosion cover, and described pedestal is ceramic wafer, also is provided be used to the support 16 that supports described ceramic wafer, and described ceramic wafer is fixed in described support upper end, and described wafer orientation seat is ceramic positioning seat.
Be provided with for the heater that promotes etch temperature.
Described heater is the some heating rods 14 that insert in described wafer orientation seat, described some heating rods top inserts in described wafer orientation seat and its underpart passes described pedestal, some described ventholes are distributed in around described wafer orientation seat, be provided with annular gas hood 15, it is peripheral and cover some described ventholes that described annular gas hood is positioned at described heating rod, and described annular gas hood lower end offers at least one aspirating hole 12.Heating rod directly heats the wafer orientation seat that carries wafer, and the efficiency of heating surface is high; Some described ventholes can be specifically around a wafer orientation seat circle aperture on every side, so that bleed evenly; The contact-making surface of described annular gas hood and described pedestal is provided with sealing ring, and described annular gas hood lower end can be symmetrical arranged two aspirating holes, so that bleed evenly, aspirating hole connects air extractor.
The course of work of the present embodiment semiconductor wafer cavitation erosion device is as follows: wafer is placed on the wafer orientation seat of semiconductor wafer cavitation erosion device, the vacuum suction mouth is air-breathing holds wafer, then the decline of cavitation erosion cover covers wafer, HF gas is blown into, and after the time of setting, HF gas stops blowing, etching is completed, the cavitation erosion cover rises, and the vacuum suction mouth stops suction, and takes out wafer.
Claims (10)
1. semiconductor wafer cavitation erosion device, it is characterized in that: be provided with pedestal (1) and cavitation erosion cover (2), described cavitation erosion cover is positioned at above described pedestal, described cavitation erosion cover can cover in and consist of confined space (3) on described pedestal, described pedestal is provided with wafer orientation seat (4), offer air admission hole (5) on described cavitation erosion cover, described air admission hole communicates with described confined space, offer some ventholes (6) on described pedestal, described venthole communicates with described confined space.
2. semiconductor wafer according to claim 1 cavitation erosion device is characterized in that: described wafer orientation seat center offers vacuum suction mouth (7), and described vacuum suction mouth connects inhales vacuum plant.
3. semiconductor wafer according to claim 1 cavitation erosion device, it is characterized in that: be provided with baffle (8), described baffle is made of superposed linkage section and the jet section one that is positioned at the bottom, the linkage section of described baffle is connected in the air admission hole lower end of described cavitation erosion cover, and the upper end of the linkage section of described baffle offers the gas inlet hole, the gas inlet hole of described baffle communicates with the air admission hole of described cavitation erosion cover, jet section of described baffle is positioned at described confined space and is positioned at above described wafer orientation seat, and the bottom surface of described jet section and side offer some fumaroles on one of at least, all fumaroles all communicate with described gas inlet hole.
4. semiconductor wafer according to claim 1 cavitation erosion device, it is characterized in that: be provided with the lowering or hoisting gear for lifting cavitation erosion cover, described cavitation erosion cover is connected with described lowering or hoisting gear.
5. semiconductor wafer according to claim 1 cavitation erosion device, it is characterized in that: the lower end of described cavitation erosion cover is embedded with viton seal ring (10).
6. semiconductor wafer according to claim 1 cavitation erosion device, it is characterized in that: the upper surface of described pedestal is concaved with positioning pit, and described wafer orientation seat lower end is embedded in described positioning pit.
7. semiconductor wafer according to claim 1 cavitation erosion device, it is characterized in that: described cavitation erosion cover is polypropylene cavitation erosion cover, described pedestal is ceramic wafer, also be provided be used to the support that supports described ceramic wafer (16), described ceramic wafer is fixed in described support upper end, and described wafer orientation seat is ceramic positioning seat.
8. the described semiconductor wafer cavitation erosion of any one device according to claim 1 to 7, is characterized in that: be provided with for the heater that promotes etch temperature.
9. semiconductor wafer according to claim 8 cavitation erosion device, it is characterized in that: the lower surface of described pedestal is fixed with draft hood (11), described draft hood covers the some described venthole on pedestal, the center, lower end of described draft hood offers aspirating hole (12), and described heater is the heating resistance pad (13) that is covered on the lower surface of described pedestal.
10. semiconductor wafer according to claim 8 cavitation erosion device, it is characterized in that: described heater is the some heating rods (14) that insert in described wafer orientation seat, described some heating rods top inserts in described wafer orientation seat and its underpart passes described pedestal, some described ventholes are distributed in around described wafer orientation seat, be provided with annular gas hood (15), it is peripheral and cover some described ventholes that described annular gas hood is positioned at described heating rod, and described annular gas hood lower end offers at least one aspirating hole (12).
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| CN201110389696.8A CN103137520B (en) | 2011-11-30 | 2011-11-30 | Semiconductor wafer cavitation device |
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| CN201110389696.8A CN103137520B (en) | 2011-11-30 | 2011-11-30 | Semiconductor wafer cavitation device |
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| CN107393848A (en) * | 2017-07-12 | 2017-11-24 | 江苏鲁汶仪器有限公司 | A kind of gaseous corrosion cavity of high sealed |
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| WO2019011056A1 (en) * | 2017-07-12 | 2019-01-17 | 江苏鲁汶仪器有限公司 | Highly-airtight vapour corrosion cavity |
| CN107393848B (en) * | 2017-07-12 | 2019-12-10 | 江苏鲁汶仪器有限公司 | High-tightness gas-phase corrosion cavity |
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| Publication number | Publication date |
|---|---|
| CN103137520B (en) | 2016-02-17 |
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