CN103117230B - A kind of technique of DIP rectifier bridge of high response - Google Patents
A kind of technique of DIP rectifier bridge of high response Download PDFInfo
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- CN103117230B CN103117230B CN201210412773.1A CN201210412773A CN103117230B CN 103117230 B CN103117230 B CN 103117230B CN 201210412773 A CN201210412773 A CN 201210412773A CN 103117230 B CN103117230 B CN 103117230B
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Abstract
The invention discloses a kind of manufacture craft of DIP rectifier bridge of high response, it is characterized in that: be mainly framework annealing, brush coating assembling, welding three steps.Described framework annealing process is: by framework by being connected with the soldering furnace (T of nitrogen
peak=440-460 DEG C) annealing.Described brush coating packaging technology is: utilize silk screen printing, by paste solder printing to frame process design section, then by chip by sucker divide to, and be converted to the frame process design section of print solder paste with suction pen.Described welding procedure is: the material assembled is put into graphite boat by soldering furnace (T
peak=350-360 DEG C) make chip together with frame welding.The product of gained of the present invention, after testing, chip surface is that metal-semiconductor directly contacts, therefore frequency is high, and reverse recovery time is short, Trr≤15ns, and unfailing performance is good.
Description
Technical field
The present invention relates to electronic applications, carrying in advance is the high manufacture craft responding DIP rectifier bridge.
Background technology
Traditional DIP product encapsulation chip is only the chip of glassivation, its weak point is that reverse recovery time is long, forward voltage is large, if encapsulation Schottky chip, chip need people's work point to, production efficiency is low, and be the mode with prewelding, yield is low, through the welding of secondary high-temperature, also can cause the potential reliability risk of product.Its production efficiency only has 8.4K/ people/12 hour, and classical electrical yield only has 88%.Its technological process as shown in Figure 1.
This technology due to shortcoming more, therefore, the research of replacing this technique is extremely urgent, but does not have relevant report at present.
Summary of the invention
Main task of the present invention is the technique of the DIP rectifier bridge providing a kind of high response.
In order to solve above technical problem, the manufacture craft of the DIP rectifier bridge of a kind of high response of the present invention, is characterized in that: be mainly framework annealing, brush coating assembling, welding three steps.
Described framework annealing process is: by framework by being connected with the soldering furnace (T of nitrogen
peak=440-460 DEG C) annealing, object is by framework by high annealing, makes framework deliquescing, reduces stress.
Described brush coating packaging technology is: utilize silk screen printing, by paste solder printing to frame process design section, then by chip by sucker divide to, and be converted to the frame process design section of print solder paste with suction pen.
Described welding procedure is: the material assembled is put into graphite boat by soldering furnace (T
peak=350-360 DEG C) make chip together with frame welding.
Further, described chip point to concrete steps as follows: crystal grain is poured on hardboard, pitch lightly 3 ~ 5 times, utilize chip P, N face metal different, its stressed different principle, make the P face of chip all upward, and then push in sucker by concentrated for supine for P chip cardboard, at jog sucker, sucker is fallen in sucker automatically.
The invention has the advantages that: 1, utilize chip P, N face metal level different, and the different principle of its density, ground cushion gently on hardboard, decrease and manually make it damage to the collision of chip point operating in process, thus guarantee its classical electrical yield, and reliability, efficiency aspect decrease people's work point to;
2, welded encapsulation adopts brush coating technique to carry out a welding procedure, the secondary welding technique that the traditional welding procedure chips of effective solution need adopt tack welding process and produce, reduces the unfailing performance problem potential risk of yield issues that thermal stress because secondary welding produces and mechanical damage cause and product;
3, the better epoxy-plastic packaging materials of characterisitic parameter such as thermal endurance, thermal coefficient of expansion, electrical characteristic, moisture-proof, adhesion are selected in encapsulation, thus make the classical electrical yield of product have one significantly to promote with traditional bridge rectifier, and the reliability of product can be guaranteed again;
4, by framework high annealing (temperature 440-460 DEG C), compare with traditional packaged type, the problem that can reduce because of framework hardness can promote welding yield, and reducing electrically declines falls;
5, its production efficiency can reach 30K/ people/12 hour, and classical electrical yield can reach 94%;
6, because chip surface is that metal-semiconductor directly contacts, therefore frequency is high, and reverse recovery time is short, Trr≤15ns, and unfailing performance is good.
Accompanying drawing explanation
Accompanying drawing 1 is DIP product processes flow chart traditional described in background technology of the present invention.
Embodiment
The present embodiment is the technique of the DIP rectifier bridge of high response.Be mainly framework annealing, brush coating assembling, welding three steps:
Step 1), framework annealing process: by framework by being connected with the soldering furnace (T of nitrogen
peak=440-460 DEG C) conventional annealing, object is by framework by high annealing, makes framework deliquescing, reduces stress;
Step 2), brush coating packaging technology: utilize silk screen printing, by paste solder printing to frame process design section, then by chip by sucker divide to, and be converted to the frame process design section of print solder paste with suction pen.In this technique, chip sucker is divided to being realize automatic directional: crystal grain is poured on hardboard, pitch lightly 3 ~ 5 times, utilize chip P, N face metal different, its stressed different principle, make the P face of chip all upward, and then push in sucker, at jog sucker by concentrated for supine for P chip cardboard, sucker is fallen in sucker automatically, reduces artificial;
Step 3), welding procedure: the material assembled is put into graphite boat by soldering furnace (T
peak=350-360 DEG C) make chip together with frame welding.
The product of gained of the present invention, after testing, chip surface is that metal-semiconductor directly contacts, therefore frequency is high, and reverse recovery time is short, Trr≤15ns, and unfailing performance is good.
The key technical indexes is forward voltage drop low VF≤0.82V@IF=5A, IR≤5 μ Α@VR=200V.
Claims (2)
1. a manufacture craft for the DIP rectifier bridge of high response, is characterized in that: be mainly framework annealing, brush coating assembling, welding three steps;
Described framework annealing process is: by framework by being connected with the soldering furnace of nitrogen, is T in temperature
peakanneal under the condition of=440-460 DEG C, object is by framework by high annealing, makes framework deliquescing, reduces stress;
Described brush coating packaging technology is: utilize silk screen printing, by paste solder printing to frame process design section, then by chip by sucker divide to, and be converted to the frame process design section of print solder paste with suction pen;
Described welding procedure is: put the material assembled into graphite boat by soldering furnace, is T in temperature
peakmake chip together with frame welding under the condition of=350-360 DEG C.
2. the manufacture craft of the DIP rectifier bridge of a kind of high response according to claim 1;
It is characterized in that: described chip point to concrete steps as follows: crystal grain is poured on hardboard, pitch 3 ~ 5 times, utilize chip P, N face metal different, its stressed different principle, make the P face of chip all upward, and then push in sucker by concentrated for supine for P chip cardboard, jog sucker again, makes sucker automatically fall in sucker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210412773.1A CN103117230B (en) | 2012-10-25 | 2012-10-25 | A kind of technique of DIP rectifier bridge of high response |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210412773.1A CN103117230B (en) | 2012-10-25 | 2012-10-25 | A kind of technique of DIP rectifier bridge of high response |
Publications (2)
| Publication Number | Publication Date |
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| CN103117230A CN103117230A (en) | 2013-05-22 |
| CN103117230B true CN103117230B (en) | 2015-11-04 |
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| CN201210412773.1A Active CN103117230B (en) | 2012-10-25 | 2012-10-25 | A kind of technique of DIP rectifier bridge of high response |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114453880B (en) * | 2021-12-20 | 2024-04-02 | 太仓市晨启电子精密机械有限公司 | Automatic assembly mechanism before welding of square bridge of electric welding machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000878A (en) * | 2007-01-05 | 2007-07-18 | 江苏长电科技股份有限公司 | Method for gluing and chip loading on lead frame of integrated circuit or discrete device |
| CN101546714A (en) * | 2009-04-30 | 2009-09-30 | 强茂电子(无锡)有限公司 | Manufacture method of miniature semiconductor bridge rectifier |
| CN101972876A (en) * | 2010-10-18 | 2011-02-16 | 重庆平伟实业股份有限公司 | MBS bridge type rectifier welding procedure |
| CN102569099A (en) * | 2010-12-28 | 2012-07-11 | 万国半导体(开曼)股份有限公司 | Packaging method of flip chip |
| CN102716906A (en) * | 2012-07-10 | 2012-10-10 | 冶科金属有限公司 | Method for producing iron nickel strip for high plate-shaped integrated circuit (IC) lead frame |
-
2012
- 2012-10-25 CN CN201210412773.1A patent/CN103117230B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000878A (en) * | 2007-01-05 | 2007-07-18 | 江苏长电科技股份有限公司 | Method for gluing and chip loading on lead frame of integrated circuit or discrete device |
| CN101546714A (en) * | 2009-04-30 | 2009-09-30 | 强茂电子(无锡)有限公司 | Manufacture method of miniature semiconductor bridge rectifier |
| CN101972876A (en) * | 2010-10-18 | 2011-02-16 | 重庆平伟实业股份有限公司 | MBS bridge type rectifier welding procedure |
| CN102569099A (en) * | 2010-12-28 | 2012-07-11 | 万国半导体(开曼)股份有限公司 | Packaging method of flip chip |
| CN102716906A (en) * | 2012-07-10 | 2012-10-10 | 冶科金属有限公司 | Method for producing iron nickel strip for high plate-shaped integrated circuit (IC) lead frame |
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| CN103117230A (en) | 2013-05-22 |
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