CN103098248A - 用于制造光电子半导体器件的方法 - Google Patents
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Abstract
本发明提出一种用于制造光电子半导体器件的方法,其中避免后续的光电子半导体器件的电接触部与填充材料的杂质颗粒接触。
Description
技术领域
本发明提出一种用于制造光电子半导体器件的方法以及一种光电子半导体器件。
发明内容
待实现的目的在于,提出用于制造光电子半导体器件的方法,所述方法对于后续的半导体器件的电接触部而言是节约材料的。
根据所述方法的至少一个实施形式,在第一步骤a)中提供载体,所述载体具有上侧,和与载体的上侧相对置的下侧。载体能够是电路板或金属载体框架(引线框架)。同样能够考虑的是,载体构成为是柔性的并且例如构成为薄膜。所述载体能够借助例如金属的可导电的材料形成,和/或借助电绝缘材料,例如硬质塑料材料、热塑性材料和/或陶瓷材料形成。如果载体用电绝缘材料形成,那么载体在上侧和/或下侧具有带状电导线和接触面。
在上侧和下侧分别构成通过载体的外面的一部分形成的面。下侧上的面是载体的外面的一部分,所述外面在载体已安装的状态下朝向接触载体——例如电路板。例如,在载体的下侧上的面是安装面,所述安装面能够用于将后续的半导体器件安装在接触载体上。此外,载体具有至少一个设置在载体的上侧的连接面。
根据所述方法的至少一个实施形式,在下一个步骤b)中将至少一个光电子器件施加在载体的上侧,其中所述光电子器件具有至少一个背离载体的接触面。至少一个接触面用于电接触光电子器件,并且用例如金属的可导电的材料形成。例如,连接面和光电子器件在横向方向上并排地设置。“横向”在本文中是指平行于载体的主延伸方向的方向。例如,光电子器件借助背离接触面的外面接合、焊接或导电地粘贴在载体的接触部位上。光电子器件尤其能够是接收辐射或者发射辐射的半导体芯片。例如半导体芯片是荧光二极管芯片(Lumineszenzdiodenchip),也可以是发光二极管芯片(Leuchtdiodenchip)或激光二极管芯片。
根据所述方法的至少一个实施形式,在下一个步骤c)中将电绝缘材料施加到接触面和连接面上。优选地,在电绝缘材料一方和接触面和连接面另一方之间既不构成缝隙也不构成中断。例如,电绝缘材料在连接面和/或接触面的背离载体的外面上完全地覆盖所述连接面和/或接触面。此外,可导电的材料也覆盖接触面的和连接面的侧面。
电绝缘材料没有填充材料的杂质颗粒。“没有填充材料的杂质颗粒”在本文中是指,填充材料的杂质颗粒没有从外部明确地引入到电绝缘材料中。最可能的是,例如由制造所决定,在电绝缘材料中仍存在有填充材料的杂质颗粒的残留物。然而优选地,杂质颗粒的浓度以低的浓度存在于电绝缘材料中,使得杂质颗粒对电绝缘材料的性质不起负面的物理和/或化学作用。
根据所述方法的至少一个实施形式,在下一个步骤d)中,将电绝缘层施加到电绝缘材料的、光电子器件的和载体的暴露的部位上。优选地,电绝缘层在所述部位上形状配合地覆盖电绝缘材料和光电子器件。例如,载体的暴露的部位在其上侧也部分地或完全地由电绝缘层覆盖。
电绝缘层具有可预设浓度的填充材料的杂质颗粒。也就是说,填充材料的杂质颗粒从外部目的明确地引入电绝缘层的材料中。如果例如由制造所决定的或由于杂质颗粒从电绝缘层扩散到电绝缘材料中而使电绝缘材料同样具有填充材料的杂质颗粒,那么优选填充材料的杂质颗粒在电绝缘材料中的浓度相对于填充材料的杂质颗粒在电绝缘层中的浓度是可忽略的。
根据所述方法的至少一个实施形式,在下一个步骤e)中,至少在接触面和连接面上方的区域中移除电绝缘材料,由此在电绝缘材料中产生至少两个开口。开口分别在竖直方向上完全地延伸穿过电绝缘材料,其中接触面和连接面至少局部地没有电绝缘材料。“竖直方向”在本文中是指垂直于横向方向的方向。例如开口具有至少一个侧面。开口的至少一个侧面能够至少局部地通过电绝缘材料形成。
根据所述方法的至少一个实施形式,在下一个步骤f)中,可导电的材料设置在电绝缘层上并且至少局部地设置在开口中,其中可导电的材料将接触面与连接面导电地连接。也就是说,可导电的材料导电地将光电子器件与载体的连接面连接,并且在此在光电子器件和连接面之间至少局部地在电绝缘层的背离载体的外侧伸展。在此,可导电的材料能够局部地直接施加在电绝缘层的外面上。例如,可导电的材料用金属或者可导电的粘结材料形成。优选地,完全地通过可导电的材料形成光电子器件和载体的连接面之间的导电连接部。例如借助导电材料完全地填充开口。
根据至少一个实施形式,在第一步骤a)中提供载体,所述载体具有上侧,与载体的上侧相对置的下侧以及至少一个设置在载体的上侧的连接面。在下一个步骤b)中将至少一个光电子器件施加在载体的上侧,其中光电子器件具有至少一个背离载体的接触面。在下一个步骤c)中,将电绝缘材料施加到接触面和连接面上,其中电绝缘材料没有填充材料的杂质颗粒。在另一个步骤d)中,将电绝缘层施加到电绝缘材料的、光电子器件的和载体的暴露的部位上,其中电绝缘层具有可预设浓度的填充材料的杂质颗粒。在下一个步骤e)中,至少在接触面和连接面上方的区域中移除电绝缘材料,由此在电绝缘材料中产生至少两开口。在下一个步骤f)中,将可导电的材料设置电绝缘层上并且至少局部地设置在开口中,其中所述可导电的材料将接触面与连接面导电地连接。
在此,用于制造光电子半导体器件的此处所描述的方法还以下述知识为基础,即在从具有可预设浓度的填充材料的杂质颗粒的电绝缘层中暴露光电子器件的电接触部时,在剥离电绝缘层之后,在接触部的接触面上仍能够余留填充材料的杂质颗粒的剩余物。填充材料的杂质颗粒的余留在接触面上的剩余物能够导致光电子器件的可电接触性降低。此外,通过填充材料的余留的杂质颗粒能够损坏光电子器件的接触面。
目前为了说明用于制造光电子半导体器件的方法,其中能够避免后续的光电子器件的电接触部的损坏并且同时改进可电接触性,在此所描述的方法还利用思想,即将电绝缘材料施加到光电子器件的电接触部上,其中电绝缘材料没有填充材料的杂质颗粒。在另一个步骤中,电绝缘层施加到电绝缘材料的暴露的部位上,其中电绝缘层具有可预设浓度的填充材料的杂质颗粒。换句话说,没有填充材料的杂质颗粒的电绝缘材料设置在电接触部和电绝缘层之间。也就是说,光电子器件的电接触部的接触面仅与电绝缘材料直接接触。换而言之,在暴露电接触部期间,电绝缘材料用作为杂质颗粒和电接触部之间的间隔保持件。因此避免电接触部与填充材料的杂质颗粒直接接触。如果现在在电接触部上方的区域中移除电绝缘材料,那么在移除之后能够最小化余留在接触面上的填充材料的杂质颗粒的剩余物。由此,在所述方法中能够避免光电子器件的电接触部的损坏,由此不仅能够提高后续的光电子半导体器件的使用寿命,而且例如也能够提高后续的半导体器件的光学输出功率。
根据所述方法的至少一个实施形式,电绝缘材料和电绝缘层具有相同的材料。例如,电绝缘层和电绝缘材料除了填充材料的杂质颗粒以外由相同的材料形成。由此有利地避免例如电绝缘层在横向方向上从电绝缘材料中脱落,因为除了填充材料的杂质颗粒以外,电绝缘层和电绝缘材料的彼此邻接的边界面具有尽可能相似的特性。例如,电绝缘材料和电绝缘层的热膨胀系数相互匹配。
根据至少一个实施形式,在接触面和/或连接面上方的区域中移除电绝缘层,由此产生开口。例如电绝缘层完全地覆盖电绝缘材料和光电子器件的所有暴露的部位。例如,在载体的上侧的所有的暴露的部位同样完全地由电绝缘层覆盖。因此,开口在竖直方向上连续地且贯通地延伸穿过电绝缘层和电绝缘材料。因此,开口的侧面不仅通过电绝缘材料形成也通过电绝缘层形成。
根据至少一个实施形式,电绝缘层包含至少一种荧光转换材料。所述荧光转换材料用于至少部分地将光电子器件内部所产生的初级电磁辐射转换为其它波长的电磁辐射。
根据所述方法的至少一个实施形式,在步骤d)之前,将电绝缘材料至少部分地施加到光电子器件的辐射穿透面上,其中电绝缘材料是可透过辐射的。例如,电绝缘材料是透明的。经由辐射穿透面,将例如在光电子器件内产生的电磁辐射从光电子器件中耦合输出,或者检测从光电子器件中穿过辐射穿透面进入光电子器件中的电磁辐射。“可透过辐射”尤其意味着,电绝缘材料可透过至少至80%的,优选至多于90%的电磁辐射。例如,电绝缘层在横向方向上直接与电绝缘材料邻接。这能够表示,电绝缘层在边缘部分地或完全地包围电绝缘材料和/或光电子器件。
根据至少一个实施形式,接下来并且在步骤d)之前,将至少一个转换层施加到电绝缘材料的背离光电子器件的外面上。优选地,光电子器件和转换层在竖直方向上至少局部地重叠。“重叠”在本文中表示,光电子器件和转换层在垂直于竖直方向上的假设平面上的数学投影至少部分地叠合。转换层用于将在光电子器件内部所产生的初级电磁辐射至少部分地转换为其它波长的辐射。
根据所述方法的至少一个实施形式,电绝缘层是反射辐射的或者吸收辐射的,并且将电绝缘层施加到光电子器件的、电绝缘材料的和转换层的暴露的部位上。“反射辐射”尤其意味着,电绝缘层反射至少至80%的,优选至多于90%的射到其上的电磁辐射。例如对于外部观察者而言电绝缘层显现为白色。例如为此,将反射辐射的颗粒引入电绝缘层中,所述反射辐射的颗粒例如用TiO2、BaSO4、ZnO或AlxOy材料中的至少一种形成或包含上述材料中的一种。例如,反射辐射的颗粒以重量百分比为至少20%的和至多50%的浓度,例如为30%的浓度引入电绝缘层中。在吸收辐射的电绝缘层中,电绝缘层对与外部观察者而言能够显现为黑色或彩色。例如,因此将碳黑颗粒引入电绝缘层中。
转换层的背离光电子器件的外面保持没有电绝缘层。“没有”意味着,转换层的背离光电子器件的外面既不被电绝缘层覆盖,也不在竖直方向上设置在转换层的下游。因此,辐射能够不受阻碍地从转换层中射出,而不射到电绝缘层上。最可能的是,仍由制造公差所决定的是,在转换层的外面上能够存在电绝缘层的材料剩余物,然而所述材料剩余物覆盖至多至10%的外面,优选至多5%的外面。
根据所述方法的至少一个实施形式,在接触面上方的区域中移除转换层,由此产生至少一个开口。换而言之,开口在竖直方向上连续地且贯通地不仅穿过转换层和电绝缘材料。例如,在接触面上方的开口的侧面完全通过转换层和电绝缘材料形成。
根据所述方法的至少一个实施形式,转换层在竖直方向上与电绝缘层齐平。也就是说,在转换层和电绝缘层之间、在横向方向上既不构成缝隙也不构成中断。例如,转换层和电绝缘层共同构成连续且贯通的平面。优选地,转转换元件从外部可见的,并且对于外部观察者而言例如显现为彩色。
根据至少一个实施形式,在步骤c)之前,将至少一个电子组件在载体上沿横向方向与光电子器件间隔地设置在载体的上侧,其中在将电子组件设置在载体上之后,首先将电绝缘材料施加到电子组件的暴露的部位上,并且接下来将电绝缘层施加到电绝缘材料的暴露的部位上。例如,以与光电子器件一样的方式接触所述电子组件。也就是说,因此同样经由引入电绝缘材料和/或电绝缘层中的开口来接触电子组件,在所述开口中至少局部地设置导电材料。例如,电子组件包含或是克服由于静电充电所引起的损坏的保护电路(也作ESD保护电路)。例如电绝缘材料除了可能用于接触的开口以外完全地且形状配合地覆盖电子组件。如果电绝缘材料同样由电绝缘层形状配合地覆盖,那么电子组件对于外部观察者而言例如能够通过电绝缘层完全地遮盖和/或覆盖。
此外,还提出一种光电子半导体器件。
光电子半导体器件例如能够借助于在此所描述的方法制造,如结合一个或多个上述实施形式来进行描述。也就是说,针对在此所描述的方法而阐述的特征也针对在此所描述的光电子半导体器件公开,并且反之亦然。
根据至少一个实施形式,光电子半导体器件包括载体,所述载体具有上侧、与载体的上侧相对置的下侧以及至少一个设置在上侧的连接面。
根据至少一个实施形式,光电子半导体器件包括至少一个设置在载体的上侧的光电子器件,所述光电子器件具有至少一个背离载体的接触面。
根据至少一个实施形式,光电子半导体器件包括电绝缘材料,所述电绝缘材料被施加在光电子器件的辐射穿透面上,其中电绝缘材料没有填充材料的杂质颗粒。
根据至少一个实施形式,光电子半导体器件包括电绝缘层,所述电绝缘层在横向方向上直接与电绝缘材料邻接,其中电绝缘层具有可预设浓度的填充材料的杂质颗粒。
根据至少一个实施形式,光电子半导体器件包括在接触面上引入电绝缘材料中的材料开口。材料开口例如在横向方向上通过材料开口的至少一个侧面来限界。侧面能够完全地通过电绝缘层形成。优选地,材料开口在竖直方向上贯通地延伸穿过电绝缘材料。
根据至少一个实施形式,接触面在材料开口的区域中至少局部地没有电绝缘材料。也就是说,接触面和材料开口在竖直方向上至少局部地彼此重叠。
根据至少一个实施形式,至少一个转换层被施加到电绝缘材料的背离光电子器件的外面上,其中电绝缘层是反射辐射的或吸收辐射的并且转换层的背离载体的外面没有电绝缘层。例如,电绝缘层在横向方向上完全地环绕转换层和光电子器件。电绝缘层例如完全地且形状配合地覆盖转换层的侧面和光电子器件的以及载体的暴露的部位。
根据至少一个实施形式,引入转换层中的层开口在竖直方向上与引入电绝缘材料中的材料开口至少部分地叠合,其中层开口和材料开口共同形成一个开口。
根据至少一个实施形式,在连接面上,在电绝缘层和电绝缘材料中引入另一开口,其中连接面至少局部地没有电绝缘材料。
根据光电子半导体器件的至少一个实施形式,所述光电子半导体器件包括可导电的材料,所述可导电的材料局部地设置在电绝缘层的背离载体的一侧上并且至少局部地设置在开口中,并且将接触面与连接面导电地连接。
附图说明
在下文中根据实施例和与其相关的附图详细阐述在此所描述的方法以及在此所描述的光电子半导体器件。
图1A至5C示出用于通过在此所描述的方法进行制造的各个生产步骤的一个实施例。
图6示出在此所描述的光电子半导体器件的一个实施例的示意侧视图。
具体实施方式
在实施例和附图中相同的或起相同作用的组成部分总是设有相同的附图标记。所示出的元件不能够视为是按比例的,相反地,为了更好的理解能够夸张大地示出各个元件。
图1A示出在此所描述的方法的步骤a)和步骤b),其中首先提供载体1,所述载体具有上侧12和与载体1的上侧12相对置的下侧11。载体1例如由陶瓷材料形成。载体1的带状电导线121和123在载体1的上侧12和下侧11局部地构成面。在带状导线121的背离载体1的下侧11的外面上首先施加电接触层122。光电子器件2施加到电接触层122上。所述光电子器件2具有背离载体1的接触面22。光电子器件2能够是发射辐射的半导体芯片,所述半导体芯片发射紫外辐射或可见光。电子组件9在横向方向L1上与光电子器件2间隔地施加在接触层122上。电子组件9具有背离载体1的接触面91。例如,不仅电子组件9而且光电子器件2能够借助于通孔经由带状电导线123电接触。这种通孔例如从载体1的上侧12起在朝着载体的下侧11的方向上完全地延伸穿过载体1。例如,借助这种通孔能够表面安装后续的半导体器件100。
图1B沿着横向方向L2示出载体1和电子组件9。横向方向L1和L2展开一个假设的平面,所述假设的平面平行于载体1的主延伸平面伸展。在此,横向方向L1和L2在平面的内相互垂直地伸展。在图1B中示出,连接面13在横向方向L2上与电子组件9间隔地施加在带状电导线121的背离载体1的外面上,其中在竖直方向V上在连接面13和导线121之间设置有电接触材料122。
图2A还沿着横向方向L2示出在下一个步骤c)中的载体1,其中将辐射可透过的电绝缘材料3施加到连接面13的、电接触材料122的所有的暴露的部位上以及施加到电子组件9和接触面91上。例如,能够借助于定量分配、喷射或浇注来进行施加。电绝缘材料3没有填充材料41的杂质颗粒42。当前,电绝缘材料3由硅树脂形成。
在图2B中沿着横向方向L1示出载体1,其中光电子器件2的辐射穿透面23,光电子器件2的接触面22以及电子组件9和接触面91的所有的暴露的部位完全地由电绝缘层3覆盖。
图3A示出,在下一个步骤中将转换层6施加到电绝缘材料3的背离光电子器件2的外面32上。
在图4A中示出,如在下一步骤d)中,将电绝缘层4完全地施加到电绝缘材料3的、光电子器件2的所有的暴露的部位上以及施加到载体1的上侧12的面上。优选地,电绝缘层4形状配合地覆盖上述部位。电绝缘层具有填充材料41的杂质颗粒42。当前,电绝缘层用基体材料,例如硅树脂、环氧树脂或由硅树脂和环氧树脂组成的混合物形成,填充材料41以可预设的浓度引入到所述基体材料中。在图4A中所示出的实施例中,填充材料41是反射辐射的材料,其中杂质颗粒42是反射辐射的颗粒,所述颗粒特别能够借助TiO2形成。换而言之,对于外部观察者而言,电绝缘层4显现为白色。在此,完全地遮住电子组件9以及载体1的和光电子器件2的由电绝缘层4覆盖的部位。在竖直方向V上,电绝缘层4与转换层6齐平。在此,转换层6的背离光电子器件2的外面62没有电绝缘层4。
图4B沿着横向方向L2示出在图4A中所示出的、由载体1、光电子器件2、电子组件9以及电绝缘材料3和电绝缘层4所组成的复合件。在图4B中可以看出,连接面13同样完全地由电绝缘材料3形状配合地覆盖,其中在这种情况下电绝缘材料3的所有的暴露的部位也由电绝缘层4形状配合地覆盖。
在图5A中示出其它的步骤e)和f),其中首先在竖直方向V上移除在光电子器件2的接触面22上和在电子组件9的接触面91上的电绝缘材料3和电绝缘层4。接触面22和91由于开口5而至少局部地没有电绝缘层4和电绝缘材料3。在下一步骤f)中,可导电的材料8设置在开口5中,其中可导电的材料8完全地填充开口5。此外还可以看出,可导电的材料8局部地设置在电绝缘层4的背离载体1的外面上。在执行步骤e)和f)之后能够制造光电子半导体器件100。
在图5B中沿着横向方向L2示出在图5A中示出的光电子半导体器件100。在此可以看出,同样在竖直方向V上在连接面13上穿过电绝缘层4和电绝缘材料3引入开口5。在开口5中设置可导电的材料8,其中在这种情况下可导电的材料3也完全地填充在连接面13上引入的开口5。
在图5C中示出在图5A和图5B中示出的半导体器件100的示意俯视图。可以看出,可导电的材料8将电子组件9的接触面91和光电子器件2的接触面22分别与连接面13电接触,并且在横向方向L2上在连接面13和这两个接触面22和91之间贯穿地伸展。
在图6中沿着横向方向L2示出在此所描述的半导体器件100的侧向剖面图。光电子半导体器件100具有载体1,所述载体具有上侧12以及与上侧12相对置的下侧11。此外,光电子半导体器件100具有设置在上侧12上的连接面13。在带状导线121的背离载体1的外面上施加接触层122。光电子器件2施加到接触层122上。光电子器件2具有背离载体1的接触面22。
此外,电绝缘材料3施加到光电子器件2的辐射穿透面23上并且完全地覆盖辐射穿透面23。此外,在图6中可以看出,转换层6施加到电绝缘材料3的背离光电子器件2的外面32上。
通过在接触面22上引入电绝缘材料3中的材料开口51,使接触面22至少局部地没有电绝缘材料3。此外,在竖直方向V上经由材料开口51将层开口52引入到转换层6中,所述层开口在竖直方向V上与材料开口51叠合。通过层开口51和材料开口52构成连续的且贯通的开口5。此外,在竖直方向V上在连接面13上将另一开口5’引入电绝缘层4和电绝缘材料3中,使得在这种情况下连接面13也至少局部地没有电绝缘材料3。可导电的材料8在电绝缘层4的背离载体1的一侧在电绝缘层4上连续地沿横向方向L2在接触面22和连接面13之间伸展。在此,可导电的材料8设置在开口5和5’中,完全地填充所述开口。也就是说,可导电的材料8将接触面22与连接面13导电地连接。电绝缘层4是反射辐射的或吸收辐射的,并且在竖直方向V上与转换层6的背离载体1的外面62齐平,其中外面62没有电绝缘层4。
不通过根据实施例进行的描述来限制本发明。相反,本发明包括每个新的特征以及特征的任意的组合,这尤其是包含在权利要求中的特征的任意的组合,即使所述特征或所述组合本身没有在权利要求或实施例中明确地说明。
本专利申请要求德国专利申请102010044560.6的优先权,其公开内容通过参引并入本文。
Claims (15)
1.用于制造光电子半导体器件(100)的方法,具有下述步骤:
a)提供载体(1),所述载体具有上侧(12)、与所述载体(1)的上侧(12)相对置的下侧(11)以及至少一个设置在所述载体(1)的上侧(12)上的连接面(13);
b)将至少一个光电子器件(2)施加到所述载体(1)的上侧(12)上,其中所述光电子器件(2)具有至少一个背离所述载体(1)的接触面(22);
c)将电绝缘材料(3)施加到所述接触面(22)和所述连接面(13)上,其中所述电绝缘材料(3)没有填充材料(41)的杂质颗粒(42);
d)将电绝缘层(4)施加到所述电绝缘材料(3)的、所述光电子器件(2)的和所述载体(1)的暴露的部位上,其中所述电绝缘层(4)具有可预设浓度的所述填充材料(41)的杂质颗粒(42);
e)在所述接触面(22)和所述连接面(13)上方的区域中至少移除所述电绝缘材料(3),由此在所述电绝缘材料(3)中产生至少两个开口(5);
f)将可导电的材料(8)设置在所述电绝缘层(4)上并且至少局部地设置在所述开口(5)中,其中所述可导电的材料(8)将所述接触面(22)与所述连接面(13)导电地连接。
2.根据权利要求1所述的方法,其中所述电绝缘材料(3)和所述电绝缘层(4)具有相同的材料。
3.根据上述权利要求之一所述的方法,其中在所述接触面(22)和/或所述连接面(13)上方的区域中移除所述电绝缘层(4),由此产生所述开口(5)。
4.根据上述权利要求之一所述的方法,其中所述电绝缘层(4)包含至少一种荧光转换材料。
5.根据上述权利要求之一所述的方法,其中在所述步骤d)之前,将所述电绝缘材料(3)至少部分地施加到所述光电子器件(2)的辐射穿透面(23)上,其中所述电绝缘材料(3)是辐射可穿透的。
6.根据上一项权利要求所述的方法,其中接下来并且在所述步骤d)之前将至少一个转换层(6)施加到所述电绝缘材料(3)的背离所述光电子器件(2)的外面(32)上。
7.根据上一项权利要求所述的方法,其中所述电绝缘层(4)是反射辐射的或吸收辐射的,并且将所述电绝缘层(4)施加到所述光电子器件(2)的、所述电绝缘材料(3)的和所述转换层(6)的暴露的部位上,其中所述转换层(6)的背离所述光电子器件(2)的外面(62)保持没有所述电绝缘层(4)。
8.根据权利要求6至7之一所述的方法,其中在所述接触面(22)上方的区域中移除所述转换层(6),由此产生至少一个所述开口(5)。
9.根据权利要求6至8之一所述的方法,其中在竖直方向(V)上,所述转换层(6)与所述电绝缘层(4)齐平。
10.根据上述权利要求之一所述的方法,其中在所述步骤c)之前将至少一个电子组件(9)在所述载体(1)上沿横向方向(L)与所述光电子器件(2)间隔地设置在所述载体(1)的上侧(12)上,其中在将所述电子组件(9)设置在所述载体(1)上之后,首先将所述电绝缘材料(3)施加到所述电子组件(9)的暴露的部位上,并且接下来将所述电绝缘层(4)施加到所述电绝缘材料(3)的暴露的部位上。
11.光电子半导体器件(100),具有
-载体(1),所述载体具有上侧(12),与所述载体(1)的上侧(12)相对置的下侧(11),以及至少一个设置在所述上侧(12)上的连接面(13);
-至少一个设置在所述载体(1)的上侧(12)上的光电子器件(2),所述光电子器件具有至少一个背离所述载体(1)的接触面(22);
-电绝缘材料(3),所述电绝缘材料施加在所述光电子器件(2)的辐射穿透面(23)上,其中所述电绝缘材料(3)没有填充材料(41)的杂质颗粒(42);
-电绝缘层(4),所述电绝缘层在横向方向(L)上直接与所述电绝缘材料(3)邻接,其中所述电绝缘层(4)具有可预设浓度的所述填充材料(41)的杂质颗粒(42),
-在所述接触面(22)上引入到所述电绝缘材料(3)中的材料开口(51),其中
-所述接触面(22)在所述材料开口(51)的区域中至少局部地没有所述电绝缘材料(3)。
12.根据上一项权利要求所述的光电子半导体器件(100),
其中至少一个转换层(6)施加到所述电绝缘材料(3)的背离所述光电子器件(2)的外面(32)上,其中所述电绝缘层(4)是反射辐射的或吸收辐射的,并且所述转换层(6)的背离所述载体(1)的外面(62)没有所述电绝缘层(4)。
13.根据权利要求11或12所述的光电子半导体器件(100),
其中引入所述转换层(6)中的层开口(52)在竖直方向(V)上与引入所述电绝缘材料(3)中材料开口(51)至少部分地叠合,其中所述材料开口(51)和所述层开口(52)共同构成开口(5)。
14.根据上一项权利要求所述的光电子半导体器件(100),
其中在所述连接面(13)上将另一开口(5’)引入所述电绝缘层(4)和所述电绝缘材料(3)中,其中所述连接面(13)至少部分地没有所述电绝缘材料(3)。
15.根据上一项权利要求所述的光电子半导体器件(100),
具有可导电的材料(8),所述可导电的材料局部地设置在所述电绝缘层(4)的背离所述载体(1)的一侧并且至少局部地设置在所述开口(5,5’)中,并且将所述接触面(22)与所述连接面(13)导电地连接。
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PCT/EP2011/064836 WO2012031932A1 (de) | 2010-09-07 | 2011-08-29 | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
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