CN103094352B - 薄膜晶体管及其制造方法、以及具备薄膜晶体管的显示装置、溅射靶材 - Google Patents
薄膜晶体管及其制造方法、以及具备薄膜晶体管的显示装置、溅射靶材 Download PDFInfo
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- CN103094352B CN103094352B CN201210440979.5A CN201210440979A CN103094352B CN 103094352 B CN103094352 B CN 103094352B CN 201210440979 A CN201210440979 A CN 201210440979A CN 103094352 B CN103094352 B CN 103094352B
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- film
- semiconductor layer
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- oxygen
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- Expired - Fee Related
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-241272 | 2011-11-02 | ||
| JP2011241272 | 2011-11-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103094352A CN103094352A (zh) | 2013-05-08 |
| CN103094352B true CN103094352B (zh) | 2016-04-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210440979.5A Expired - Fee Related CN103094352B (zh) | 2011-11-02 | 2012-11-02 | 薄膜晶体管及其制造方法、以及具备薄膜晶体管的显示装置、溅射靶材 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP2013118367A (ja) |
| KR (1) | KR20130048703A (ja) |
| CN (1) | CN103094352B (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5972317B2 (ja) * | 2014-07-15 | 2016-08-17 | 株式会社マテリアル・コンセプト | 電子部品およびその製造方法 |
| CN104952914A (zh) * | 2015-04-30 | 2015-09-30 | 京东方科技集团股份有限公司 | 一种氧化物半导体薄膜、薄膜晶体管、制备方法及装置 |
| CN105261636B (zh) * | 2015-11-05 | 2018-04-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其制备方法、阵列基板及显示装置 |
| JP6574714B2 (ja) * | 2016-01-25 | 2019-09-11 | 株式会社コベルコ科研 | 配線構造およびスパッタリングターゲット |
| CN110392909A (zh) * | 2017-04-13 | 2019-10-29 | 株式会社爱发科 | 液晶显示装置、有机el显示装置、半导体元件、布线膜、布线基板、靶材 |
| CN110651370B (zh) * | 2017-06-05 | 2023-12-22 | 凸版印刷株式会社 | 半导体装置、显示装置及溅射靶 |
| JP2020012190A (ja) * | 2018-07-20 | 2020-01-23 | 株式会社アルバック | 密着膜用ターゲット、配線層、半導体装置、液晶表示装置 |
| CN110144483B (zh) * | 2019-05-29 | 2020-11-10 | 西安交通大学 | 一种铜镁合金及其制备方法 |
| CN110310894B (zh) * | 2019-07-05 | 2022-11-25 | 山东大学 | 一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法 |
| WO2023028872A1 (zh) * | 2021-08-31 | 2023-03-09 | 京东方科技集团股份有限公司 | 金属氧化物薄膜晶体管及制作方法、显示面板和显示装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877428A (zh) * | 2005-06-07 | 2006-12-13 | 株式会社神户制钢所 | 显示装置 |
| CN101330102A (zh) * | 2007-06-20 | 2008-12-24 | 株式会社神户制钢所 | 薄膜晶体管基板和显示器件 |
| CN101523612A (zh) * | 2006-10-13 | 2009-09-02 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
| CN102169905A (zh) * | 2010-02-19 | 2011-08-31 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
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| JP5121299B2 (ja) * | 2007-05-09 | 2013-01-16 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置 |
| JP5550848B2 (ja) * | 2009-04-17 | 2014-07-16 | 株式会社Ｓｈカッパープロダクツ | 配線構造の製造方法、及び配線構造 |
| JP2011049543A (ja) * | 2009-07-27 | 2011-03-10 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
| JP2011091364A (ja) * | 2009-07-27 | 2011-05-06 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
| DE102009038589B4 (de) * | 2009-08-26 | 2014-11-20 | Heraeus Materials Technology Gmbh & Co. Kg | TFT-Struktur mit Cu-Elektroden |
| JP2011150152A (ja) * | 2010-01-22 | 2011-08-04 | Hitachi Displays Ltd | 表示装置の製造方法及び表示装置 |
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- 2012-11-01 KR KR1020120122959A patent/KR20130048703A/ko not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877428A (zh) * | 2005-06-07 | 2006-12-13 | 株式会社神户制钢所 | 显示装置 |
| CN101523612A (zh) * | 2006-10-13 | 2009-09-02 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
| CN101330102A (zh) * | 2007-06-20 | 2008-12-24 | 株式会社神户制钢所 | 薄膜晶体管基板和显示器件 |
| CN102169905A (zh) * | 2010-02-19 | 2011-08-31 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
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| Publication number | Publication date |
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| JP2013118367A (ja) | 2013-06-13 |
| JP2016197743A (ja) | 2016-11-24 |
| KR20130048703A (ko) | 2013-05-10 |
| JP6335226B2 (ja) | 2018-05-30 |
| CN103094352A (zh) | 2013-05-08 |
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