CN103094286B - 浅槽隔离结构进行离子注入的方法 - Google Patents
浅槽隔离结构进行离子注入的方法 Download PDFInfo
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CN103094286B true CN103094286B (zh) | 2015-08-19 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105514020A (zh) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构的制作方法及半导体器件 |
CN109727906B (zh) * | 2017-10-31 | 2021-01-05 | 无锡华润微电子有限公司 | N型半导体元器件的浅槽隔离结构的处理方法 |
CN113745100B (zh) * | 2021-07-21 | 2023-12-22 | 绍兴中芯集成电路制造股份有限公司 | 一种台面无损伤的屏蔽栅场效应晶体管的制造方法 |
CN115841982A (zh) * | 2021-08-12 | 2023-03-24 | 长鑫存储技术有限公司 | 浅槽隔离结构的制备方法、浅槽隔离结构和半导体结构 |
Citations (5)
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---|---|---|---|---|
US6403412B1 (en) * | 1999-05-03 | 2002-06-11 | International Business Machines Corp. | Method for in-situ formation of bottle shaped trench by gas phase etching |
CN1838401A (zh) * | 2004-11-17 | 2006-09-27 | 因芬尼昂技术股份公司 | 瓶形沟槽及瓶形沟槽式电容器的制造方法 |
CN101840888A (zh) * | 2009-03-16 | 2010-09-22 | 台湾积体电路制造股份有限公司 | 集成电路结构及其形成方法 |
CN102044542A (zh) * | 2009-10-09 | 2011-05-04 | 台湾积体电路制造股份有限公司 | 半导体元件及其制法 |
EP1763074A3 (en) * | 2005-09-09 | 2011-06-01 | Infineon Technologies AG | Isolation for Semiconductor Devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US7045468B2 (en) * | 1999-04-09 | 2006-05-16 | Intel Corporation | Isolated junction structure and method of manufacture |
JP2005327867A (ja) * | 2004-05-13 | 2005-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
TWI277202B (en) * | 2005-09-27 | 2007-03-21 | Promos Technologies Inc | Bottle-shaped trench and method of fabricating the same |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6403412B1 (en) * | 1999-05-03 | 2002-06-11 | International Business Machines Corp. | Method for in-situ formation of bottle shaped trench by gas phase etching |
CN1838401A (zh) * | 2004-11-17 | 2006-09-27 | 因芬尼昂技术股份公司 | 瓶形沟槽及瓶形沟槽式电容器的制造方法 |
EP1763074A3 (en) * | 2005-09-09 | 2011-06-01 | Infineon Technologies AG | Isolation for Semiconductor Devices |
CN101840888A (zh) * | 2009-03-16 | 2010-09-22 | 台湾积体电路制造股份有限公司 | 集成电路结构及其形成方法 |
CN102044542A (zh) * | 2009-10-09 | 2011-05-04 | 台湾积体电路制造股份有限公司 | 半导体元件及其制法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
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